CN101073084A - System and method for analyzing photomask geometries - Google Patents
System and method for analyzing photomask geometries Download PDFInfo
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- CN101073084A CN101073084A CNA2005800417269A CN200580041726A CN101073084A CN 101073084 A CN101073084 A CN 101073084A CN A2005800417269 A CNA2005800417269 A CN A2005800417269A CN 200580041726 A CN200580041726 A CN 200580041726A CN 101073084 A CN101073084 A CN 101073084A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Abstract
After simulated geometry (106) has been generated, simulated geometry (106) may be modified to generate a predicted resulting geometry (108). Predicted resulting geometry (108) includes a predication of the geometry that would be formed in patterned layer (58) of photomask (52) if photomask (52) were processed using modified geometry (102) as input for imaging. In other word, predicted resulting geometry (108) includes a predication of the geometry that would be formed in patterned layer (58) when etch process were processed on the patterned layer defined by simulated geometry.
Description
The cross reference of related application
That the application requires is on October 5th, 2005 application, people such as Kent Nakagawa, title is the U.S. Provisional Patent Application sequence No.60/615 of " Systems and Methods for Predicting Photomask Geometries UsingSimulation ", 881 right of priority is all introduced content for your guidance at this.
Technical field
The disclosure relates generally to the integrated circuit manufacturing, more specifically, relates to a kind of system and method for analyzing photomask geometries.
Background technology
Integrated circuit (IC)-components typically comprises various circuit blocks, for example transistor, resistance and electric capacity.These integrated circuit components can for example, comprise the photoetching technique of utilizing one or more photomasks by utilizing various ic manufacturing technologies, form specific geometric figure and make in semiconductor wafer (wafer) (for example, silicon wafer).
Photomask itself can utilize various photoetching processes to be formed by photo blanks (photomask blank).By the pattern imaging tool, for example Optical Maser System, electron beam system or X-ray lithography system can use definition will be formed on one or more geometric mask pattern file in the absorption layer of photo blanks as input.Pattern imaging tool can be used for the exposing part of above the photo blanks absorption layer consistent formed resist layer with the geometric figure that limits by mask pattern file.
Yet the geometric accuracy (with being compared by the geometric figure of mask pattern file definition) that in fact is imaged onto on the resist layer can limit by the specific pattern imaging tool of using.For example, electron beam or laser are used for the situation of design transfer to resist layer, and the sharpness or the acutance that are imaged onto the particular geometric figure in the resist layer can be by the electronics that uses or the width limitations of laser beam.Therefore, owing to the distortion that the physical restriction by imaging tool causes, do not have and to transfer in the resist layer of photomask with accuracy enough or that wish by the particular geometric figure that mask pattern file limits.
Fig. 1 example the example geometric figure 10 that limits by mask pattern file, in fact be imaged onto the corresponding geometric figure 12 in the resist layer of photomask, wherein the difference between geometric figure 10 and the geometric figure 12 is that physical restriction by the pattern imaging tool of using causes.As shown in Figure 1, because the restriction of pattern imaging tool makes the turning of the geometric figure 12 of imaging become circle.The function of the pattern imaging tool that the degree of turning change circle is to use, for example width of electron beam of Shi Yonging or laser.
In case will be imaged onto by the pattern that mask pattern file limits in the resist layer of photomask, just the exposure region of development and etching resist layer is to set up pattern in resist layer.The part (for example, exposure region) of the following absorption layer of the photo blanks that do not covered by resist of etching then, and the undeveloped portion that removes resist layer then is to set up desirable pattern (or desirable pattern is approximate) in absorption layer.During the etching of the exposure region of absorption layer, but also etching surpasses the other part of the absorption layer at exposure region edge.This other etching can be described as " crossing etching ".Thus, when the exposure region to absorption layer with particular geometric figure carried out etch process, that the substantial portion of the absorption layer that is removed by etch process can have was different, geometric figures that comprise for example more.For example, cross around the geometric periphery be etched in etched absorption layer part the relatively situation of homogeneous, the geometric figure of the substantial portion of the absorption layer that is removed by etch process can have the geometric periphery of the exposure region that evenly departs from opaque layer.
Continue the example shown in Fig. 1, Fig. 2 example be imaged onto the example geometric figure 12 in the resist layer of photo blanks and be formed on example geometric figure 14 in the absorption layer of photo blanks by above-mentioned etch process.As shown in Figure 2, the actual periphery that is formed on the geometric figure 14 in the absorption layer departs from the periphery that is imaged onto the geometric figure 12 in the resist layer owing to overetched influence.This is crossed etching and is caused by various factors, for example in the undercutting of resist layer during the wet etching process or the erosion of resist layer during dry etching process.
Fig. 3 example at the overetched case effect in corner regions 16 places of the geometric figure shown in Fig. 1 and 2 10,12 and 14.By crossing the skew that etch effects causes, on each point along the edge of geometric figure 12 is in direction with the edge-perpendicular of geometric figure 12, can have general uniform distance D, as by shown in the arrow 18 of homogeneous length.As directed, arrow 18 each all with the direction vertical along its each position at the edge of geometric figure 12 on extend.Because the variation of marginal position is perpendicular to each point at the edge of geometric figure 12, this influence is in the turning of geometric figure 12 and the variation of other non-linear partial place curvature.Therefore, the curvature that is different from 16 place's geometric figures 12 in the curvature of corner region 16 place's geometric figures 14 at the turning.Especially, the curvature of the interior angle 22 of geometric figure 14 not sharp keen (or not sharp-pointed), and the curvature at the exterior angle 22 of geometric figure 14 sharper keen (or more sharp-pointed).
Be also referred to as the absorption layer of the photomask of patterned layer, can comprise one or more parts, these parts have corresponding to the geometric figure that will be formed on integrated circuit (IC) parts on the semiconductor wafer.During photoetching process, the geometric patterned layer that will comprise the IC parts is transferred on the surface of semiconductor wafer to form corresponding IC parts.These IC parts can be including, but not limited to for example resistance, transistor, electric capacity, interconnection, through hole and metal wire.
In some cases, forming specific IC parts with accurate and/or accuracy is important or crucial for the proper operation of IC as a result.Therefore, hope can be predicted based on the geometric figure as a result in the particular geometric figure that limits in the mask pattern file actual absorption that is formed on photomask (or patterning) layer.Especially, wish that this prediction can solve the difference between the corresponding geometric figure in geometric figure that (1) define and the resist layer that in fact is imaged onto photo blanks in mask pattern file, this difference may be that the physical restriction by the pattern imaging tool of using causes, (2) be imaged onto the geometric figure in the resist layer of photomask and in fact be formed on difference between the corresponding geometric figure in absorption (or patterning) layer of photomask, this difference may cause by crossing etching.
Summary of the invention
According to instruction of the present disclosure, shortcoming and the problem relevant have been reduced or eliminated substantially with prediction and/or analyzing photomask geometries.
A kind of method of analyzing photomask geometries is provided in a specific embodiment.Reception will be formed on the initial geometry in the absorption layer of photo blanks.Can revise initial geometric figure to be created on the Modified geometrical figure that departs from initial geometry at least one direction.Simulate to determine the geometric figure of simulation based on the geometric figure of revising, wherein the geometric figure of this simulation is the geometric figure prediction of the simulation on the resist layer that can be written to photo blanks under the situation of the geometric figure of revising as the input of imaging resist layer.Then, the geometric figure of revising simulation is in order to determine the initial geometry of prediction, and wherein Yu Ce initial geometry is the geometric prediction that can be formed under to the situation by the absorption layer zone execution etch processes of simulation geometric figure definition in the absorption layer of photo blanks.
In another embodiment, provide a kind of system that is used for analyzing photomask geometries.This system can comprise unify computer-readable medium with computer system interface of the department of computer science with processor.This computer-readable medium comprises software, when being carried out by processor, can operate: reception will be formed on the initial geometry in the absorption layer of photo blanks; Revise initial geometric figure to generate the geometric figure of revising, the geometric figure of this correction is included in the geometric figure that departs from initial geometry at least one direction; Carry out simulation to determine the geometric figure of simulation based on the geometric figure of revising, the geometric figure of this simulation is included in the geometric figure prediction of the simulation in the resist layer that can be written to photo blanks under the situation of the geometric figure of revising as the input of imaging resist layer; And revise the initial geometry of the geometric figure of simulation with generation forecast, the initial geometry of this prediction is included in the geometric prediction in the absorption layer that can be formed on photo blanks under the situation of being carried out etch processes by the absorption layer zone of the geometric figure definition of simulating.
The advantage of at least some embodiment of the present disclosure is, is provided for predicting that geometric figure as a result in the absorption layer that can be formed on photo blanks under the situation of specific geometric figure as the input that forms patterned layer is with the system and method for the patterned layer that forms photomask.Can be before reality form patterned layer on the photomask, simulation is by the geometric figure of mask pattern file definition, to predict the actual pattern that can be formed in the patterned layer under the situation that mask pattern file is used as input.Based on this Simulation result, the scalable mask pattern file is until definite suitable prediction actual pattern.This can reduce or eliminate and form on the photomask of making because by the difference between the geometric figure of the mask pattern file definition that is used for generating patterned layer and the actual geometric figure that is formed on patterned layer (for example, difference is because factor for example is used for generating the size restrictions of the instrument of patterned layer, and/or overetched influence causes) and the possibility of the not satisfied patterned layer that causes.Therefore, can reduce or eliminate and form relevant time and the expense of not satisfied photomask (it may need to be dropped).In certain embodiments, can utilize computer system to simulate.
Whole, some or the no one that in each embodiment of the present disclosure, have these technological merits.By following figure, description and claim, other technological merit is conspicuous easily to those skilled in the art.
Description of drawings
Can obtain the more complete of present embodiment and advantage thereof and understanding completely with reference to following description in conjunction with the drawings, wherein identical Reference numeral is represented identical feature, and in the drawings:
Fig. 1 example utilize mask pattern file as the example geometric figure that in mask pattern file, defines of input with at the corresponding geometric figure of actual imaging in the resist layer of photo blanks;
Fig. 2 example the example geometric figure that in mask pattern file, defines, in fact be imaged onto the corresponding geometric figure in as shown in Figure 1 the resist layer and after carrying out etch process, in fact be formed on example geometric figure in the absorption layer of photo blanks;
Fig. 3 example at the overetched case effect of geometric specific corner shown in Fig. 1 and 2;
Fig. 4 example according to some embodiment of the present disclosure, the sectional view of the example light mask assembly of formation;
Fig. 5 A-5C example according to specific embodiment of the present disclosure, be used to predict to form the geometric case method of result of the patterned layer of photomask based on particular geometric figure by the mask pattern file definition;
Fig. 6 example predict the outcome geometric figure and the conventional comparison of predicting between the geometric figure that produce according to the method shown in Fig. 5 A-5C;
Fig. 7 is the details drawing that prediction result geometric figure and routine shown in Figure 6 are predicted first corner region of the comparison between the geometric figure;
Fig. 8 is the details drawing that prediction result geometric figure and routine shown in Figure 6 are predicted second corner region of the comparison between the geometric figure;
Fig. 9 example according to specific embodiment of the present disclosure, be used to predict the geometric instance system of result that is used to form the patterned layer of photomask based on the particular geometric figure that limits by mask pattern file; With
Figure 10 example according to an embodiment of the present disclosure, on photomask, form the process flow diagram of the method for patterned layer.
Embodiment
By understand each embodiment of the present disclosure and their advantage better with reference to figure 4 to 10, wherein identical Reference numeral is used to represent identical and corresponding part.
Fig. 4 example according to the cross-sectional view of the example light mask assembly 50 of some embodiment of the present disclosure.Photomask component 50 can comprise the film assembly 54 that is installed on the photomask 52.Substrate 56 and patterned layer 58 can form photomask 52, are called mask or graticule in addition, and it can have various sizes and shape, including, but not limited to circle, rectangle or square.Photomask 52 can also be various photomask types, including, but not limited to can be used for single mask (one-time mask) to the semiconductor wafer of the image projection of circuit pattern, five inches graticules, six inches graticules, nine inches graticules or any other graticule of suitable dimension.Photomask 52 can further be binary mask, phase shifting mask (PSM) (for example, the aperture phase-shift mask that replaces is also referred to as Levenson type mask), optical proximity correction (OPC) mask or the mask that is suitable for any other type of etching system.
The patterned layer 58 of photomask 52 can be formed on the surface 57 of substrate 56, and when being exposed to the electromagnetic energy of etching system, it (does not clearly illustrate graphic pattern projection) to the surface of semiconductor wafer.Substrate 56 can be a transparent material, for example quartz, synthetic quartz, fused quartz, magnesium fluoride (MgF
2), calcium fluoride (CaF
2) or transmission have any other suitable material of seven ten five at least percent (75%) incident light of wavelength between approximate 10nm and the approximate 450nm.In optional embodiment, substrate 56 can be a reflecting material, and for example silicon or reflection have any other suitable material greater than approximate 50 (50%) percent incident light of wavelength between approximate 10nm and the 450nm.
By guaranteeing distance that pollutant keeps definition from photomask 52, film 62 can be protected for example influence of micronic dust of the not contaminated thing of photomask 52.This is even more important in etching system.During photoetching process, photomask component 50 can be exposed to the electromagnetic energy that is produced by the radiant energy source in the etching system.Electromagnetic energy can comprise the light of various wavelength, I line that for example is similar at mercury-arc lamp and the wavelength between the G line or DUV, VUV or EUV light.At work, can design film 62 makes the electromagnetic energy of big number percent pass it.The pollutant that accumulates on the film 62 will not focus in the wafer surface of handling probably, and therefore, the image that exposes on the wafer should be understood that.Available all types of electromagnetic energy uses the film 62 that forms according to instruction of the present disclosure satisfactorily, and is not limited to the light wave described as in this application.
Photomask 52 can utilize standard photolithography process to be formed by photo blanks.In photoetching process, comprise that the mask pattern file of the data that are used for patterned layer 58 can produce from mask layout file.One or more geometric figures of mask layout file definable, it can comprise polygon or represent for example other shape of transistor, resistance, electric capacity, through hole and interconnection of various IC parts.The different layers of integrated circuit in the time of can further being illustrated in preparation on the semiconductor wafer by the geometric figure of mask layout file definition.For example, transistor can be formed on the semiconductor wafer with diffusion layer and polysilicon layer.Therefore, the mask layout file definable is at one or more polygons of drawing on the diffusion layer and one or more polygons of drawing on polysilicon layer.The polygon that is used for every layer can convert the mask pattern file of representing integrated circuit one deck to.Each mask pattern file can be used for generating photomask for certain layer.In certain embodiments, the mask pattern file definable is more than the integrated circuit of one deck, so that photomask can be used for feature from being imaged onto on the surface of semiconductor wafer more than one deck.
Utilize mask pattern file as input, the desired pattern that can utilize laser, electron beam, X-ray lithography system or other suitable pattern imaging tool will be used for patterned layer 58 is imaged onto the resist layer of photo blanks.The imaging moiety of resist layer can be described as " exposure " district.In one embodiment, laser lithography system is used Argon ion laser, and it sends the light with approximate 364nm wavelength.In other embodiments, laser lithography system is used luminous to the laser instrument of approximate 300nm wavelength from approximate 150nm.
As mentioned above, the accuracy that will be imaged onto by the geometric figure of mask pattern file definition in the resist layer can be by the specific pattern imaging tool restriction of using.For example, electron beam or laser are used for design transfer to resist layer, and the acuity or the acutance that are imaged onto the particular geometric figure in the resist layer can be by the electronics that uses or the width limitations of laser beam.Therefore, owing to the deformation reason that the physical restriction by imaging tool causes, can be not transferring in the resist layer of photomask 52 with accuracy enough or that wish by the particular geometric figure in the pattern of mask pattern file definition.
In case will be imaged onto in the resist layer by the pattern of mask pattern file definition, the exposure region that just can develop and etch away resist layer is to set up pattern in resist layer.The part of the following patterned layer 58 that then can etching not be covered by resist, and the undeveloped portion that can remove resist layer then is to set up desirable pattern (or desirable at least pattern is approximate) in the patterned layer above substrate 56 58.In some cases, but also etching is above the other part at the edge of exposure region, and it can be described as " crossing etching ".
The distortion that causes for physical restriction and/or the overetched influence of eliminating by instrument, can before actual formation patterned layer 58 on the photomask 52, simulate pattern (or its part), so that the measurable actual pattern that will be formed in the patterned layer 58 by the mask pattern file definition.Based on analog result, the scalable mask pattern file is until definite suitable prediction actual pattern.This can reduce or eliminate and form on the photomask 52 because by the possibility of the caused undesirable patterned layer 58 of difference between the geometric figure of the pattern of the mask layout file definition that is used for generating this patterned layer 58 and the actual geometric figure that produces this patterned layer 58 (for example, because factor for example is used for generating the intrinsic size restrictions of the equipment of patterned layer 58, overetched influence etc. cause).
Fig. 5 A-5C example according to specific embodiment of the present disclosure, be used for predicting being formed on the geometric case method of result of the patterned layer 58 of photomask 52 based on the particular geometric figure that limits by mask pattern file.Fig. 5 A example by the geometric figure 100 of the hope of mask pattern file definition.The geometric figure 100 of wishing is the geometric figure of estimating to be formed in one or more semiconductor wafers, and can be consistent with one or more parts that will be formed on the integrated circuit in the semiconductor wafer.
Can revise the geometric figure 100 of hope by the particular offset of around the periphery of the geometric figure 100 of hope, extending, to produce Modified geometrical figure 102.The width of this skew or distance D can be around the periphery of desired geometric figure 100 fully or even at least basically.In certain embodiments, based on overetched width or the distance D of wishing distance next definite skew relevant, can use (or wishing to use) this etch process during formation photomask 52, in patterned layer 58, to form geometric figure with etch process.For example, if the etching excessively of 30nm is known for the result when photomask 52 forms patterned layer 58 when specific etch process is used for, then the skew of D=30nm can be used for producing Modified geometrical figure 102.Shown in Fig. 5 A, because near the skew of the periphery of Modified geometrical figure 102, extending, when generation Modified geometrical figure 102, can lose the one or more specific feature 104 of wishing geometric figure 100 (for example, relatively little feature).
Have after the Modified geometrical figure 102 of wishing geometric figure 100 1 offset distance D in generation, can carry out determining simulation geometric figure 106, shown in Fig. 5 B based on the simulation of the computer mode of Modified geometrical figure 102.If by the pattern imaging tool, for example laser imaging instrument, electron beam patterning instrument or X-ray lithography system, use Modified geometrical figure 102 as input, Mo Ni geometric figure 106 can be written to the geometric figure prediction of the simulation on the photomask 52 with regard to expression so.For example, this simulation attempts to predict that the turning becomes circle and geometric figure (in this case, be the geometric figure 102 revised) relevant other effect specific with imaging.Simulation can comprise any one or a plurality of suitable algorithm or modeling function, for example one or more Gaussian functions or expression formula.In certain embodiments, adjustable Gauss luminous point size in case with specific imaging tool, for example ALTA laser write device (for example, ALTA4000 instrument) or JEOL e-beam tool unanimity.Can utilize any suitable software application, for example can be by Mentor GraphicsCorporation
TMThe CALIBRE that obtains
TMSimulation is carried out or helped to modeling software.
After the geometric figure 106 that has generated simulation, the geometric figure 106 that can revise simulation generates prediction result geometric figure 108.If photomask 52 has been handled in the input of resist layer that utilizes Modified geometrical figure 52 to be used to set up the photo blanks of photomask 52 as imaging, then prediction result geometric figure 108 comprises the geometric prediction in the patterned layer 58 that can be formed on photomask 52.In other words, if to having carried out etch processes by the zone of the patterned layer 58 of geometric figure 106 definition of simulation, then prediction result geometric figure 108 comprises and can be formed on geometric prediction in the patterned layer 58.Therefore, if the geometric figure 106 of simulation has been etched in the patterned layer 58, then prediction result geometric figure 108 just can solve owing to crossing the geometric figure skew that etching predicts the outcome.Shown in Fig. 5 C, near the skew of periphery that may extend into the geometric figure 106 of simulation can have the width or the distance D of homogeneous.
Shown in Fig. 5 C, the linear segment of prediction result geometric figure 108 (more specifically, not being the linear segment of the corner region of adjacent hope geometric figure 100) can mate the corresponding linear segment of wishing geometric figure 100 substantially.This causes the fact of the linear segment of the geometric figure 102 revised from desirable geometric figure 100 inside offset distance D, the linear segment of the geometric figure 104 of simulation (or not being the linear segment at least of adjacent corner region) is the corresponding linear segment of the Modified geometrical figure 102 that simulated of coupling basically, and the linear segment of prediction result geometric figure 108 is from the geometric figure 104 outside offset distance D of simulation.Therefore, inwardly can cancel each other out substantially with the distance D that outwards is offset.
Fig. 6 example the comparison between geometric figure 108 and the conventional prediction geometric figure 120 of predicting the outcome that generates according to method shown in Fig. 5 A-5C.As prediction result geometric figure 108, if utilize Modified geometrical figure 102 to handle photomask 52 as the input of the resist layer of imaging mask 52, the prediction geometric figure that then conventional prediction geometric figure 120 expressions can form in the patterned layer 58 of photomask 52.Yet, different with prediction result geometric figure 108, utilize known simulation model or other known technology,, then generate the geometric figure 120 of conventional prediction for example by one or more Gaussian functions or expression formula are applied directly to desirable geometric figure 100.
Under at least some situations, if use of the input of Modified geometrical figure 102 as the resist layer of imaging mask 52, then prediction result geometric figure 108 can be formed on exactly in the patterned layer 58 of photomask 52 simulate accurately basically geometric approximate.Under at least some situations, prediction result geometric figure 108 is to be formed on that actual result is geometric approximate more accurately in the patterned layer 58 of photomask 52, and than existing simulation geometric figure, for example Chang Gui prediction geometric figure 120 is more accurate.
Fig. 7 is the details drawing of first corner region 122 of the comparison between prediction result geometric figure 108 shown in Figure 6 and the conventional prediction geometric figure 120.As shown in Figure 7, the sweep of conventional prediction geometric figure 120 is symmetrical substantially with respect to interior angle 124 and exterior angle 126 at least in corner region 122.Compare, the sweep of prediction result geometric figure 108 is with respect to interior angle 124 and exterior angle 126 symmetries in corner region 122.Especially, the curvature of the interior angle 124 of prediction result geometric figure 108 is sharp-pointed (not too sharp keen) not too, and the curvature at the exterior angle 124 of prediction result geometric figure 108 is compared the symmetrical curve more sharp-pointed (or sharper keen) of conventional prediction geometric figure 120.In some cases, compare the geometric figure of existing simulation, Chang Gui prediction geometric figure 120 for example, by etched pattern layer 58, this asymmetrical curve is approximate more accurately can be formed on actual geometric curve in the patterned layer 58 of photomask 52.
Fig. 8 is the details drawing of second corner region 130 of the comparison between geometric figure 108 and the conventional prediction geometric figure 120 that predicts the outcome shown in Figure 6.As shown in Figure 8, the sweep of prediction result geometric figure 108 is sharp-pointed unlike the sweep of prediction geometric figure 120 traditional in the corner region 130 in corner region 130.In some cases, compare existing simulation geometric figure, Chang Gui prediction geometric figure 120 for example, by etched pattern layer 58, the geometric sweep of prediction result is similar to the actual geometric curve in the patterned layer 58 that can be formed on photomask 52 more accurately in corner region 130.
Fig. 9 example according to specific embodiment of the present disclosure, being used for predicting will be based on the example system 200 that is formed on the geometric figure as a result (for example, the geometric figure of discussing 108 that predicts the outcome) of the patterned layer 58 of photomask 52 by the particular geometric figure of mask pattern file definition here.System 200 can comprise processor 202 and storer 204, and it can be operated with storage simulation softward application program 206 and/or mask pattern file 208.Simulation softward application program 206 can comprise any suitable software that is used for carrying out here the geometric some or all of functions of discussing that are used to predict the patterned layer that is formed on photomask, for example is used for the method for the prediction result geometric figure 108 discussed with reference to figure 5A-5C here.Mask pattern file 208 can comprise that any or a plurality of computer readable file, this document comprise that definition will be formed on that geometric data in the patterned layer of photomask and/or definition are used to simulate or this geometric data of other test.
In certain embodiments, processor 202 can comprise CPU (central processing unit) (CPU) or other microprocessor, and can comprise the processor of any suitable quantity of working together.Storer 204 can comprise the one or more execution of convenient simulation softward application program 206 or memory devices of other computer instruction of being suitable for, for example, one or more random-access memory (ram)s, ROM (read-only memory) (ROM), dynamic RAM (DRAM), soon circulate RAM (fast cycle RAM) (FCRAM), static RAM (SRAM) (SRAM), field programmable gate array (FPGA), Erasable Programmable Read Only Memory EPROM (EPROM), Electrically Erasable Read Only Memory (EEPROM), microcontroller or microprocessor.
Figure 10 example be used for forming the method for patterned layer 58 according to an embodiment of the present disclosure at photomask 52.In step 300, can receive the mask pattern file 208 of definition initial geometry (for example, the geometric figure 100 of hope).In step 302, can revise initial geometry by the particular offset of extending, to generate the geometric figure of revising (for example, the geometric figure 102 of correction) in (with within) around the periphery of desired geometric figure 100.As mentioned above, can determine the distance of skew based on the overetched desired distance relevant with etch process, this etch process is used for forming geometric figure in patterned layer 58 during the formation of photomask 52.
After generation departs from the Modified geometrical map migration of initial geometry, can carry out based on the computerize of Modified geometrical figure in step 304 and simulate, to determine the geometric figure (for example, the geometric figure 106 of simulation) of simulation.If use the geometric figure of revising as input by the pattern imaging tool, then Mo Ni geometric figure just can comprise the geometric figure prediction that can be written to the simulation on the photomask 52.For example, this simulation attempt to predict the turning become circle and/or with other relevant influence of this Modified geometrical figure of imaging.As mentioned above, this simulation can comprise any one or a plurality of suitable algorithm or modeling function, for example one or more Gaussian functions or expression formula.
After the geometric figure that has generated simulation, if the geometric figure of utilize revising is used to set up the input of resist layer of the photo blanks of photomask 52 as imaging, then can revise the geometric figure of simulation in step 306, can be formed on the geometric prediction (for example, the prediction result geometric figure 108) in the patterned layer 58 of photomask 52 with generation.In other words, if to carrying out etch processes by the zone of the patterned layer 58 that defines at the definite simulation geometric figure of step 304, then the prediction result geometric figure can comprise the geometric prediction that can be formed in the patterned layer 58.Therefore, if the geometric figure of simulation is etched in the patterned layer 58, then the prediction result geometric figure can be considered the geometric figure skew to the prediction of result that causes owing to the mistake etching.
In step 308, can determine whether be satisfied with at the geometric figure that predicts the outcome that step 306 is determined.For example, can determine whether to cut off or do not distort specific feature with accepting, for example become reasons such as circle owing to the turning.If be unsatisfied with the prediction result geometric figure of determining in step 306, then can change at least a portion of the initial geometry of definition in mask pattern file 208 in step 310 based on the geometric figure of determining in step 306 that predicts the outcome.For example, if the prediction result geometirc graphical presentation will cut off or do not distort specific feature (for example, because the turning becomes circle etc.) with accepting, so just may therefore change initial geometric figure.But repeating step 302-308 determines the geometric prediction result geometric figure of change determined corresponding in step 310 then.Can repeat this technology in the mode of iteration, until determining that in step 308 the prediction result geometric figure is satisfied.
Determining after step 308 prediction result geometric figure is satisfied, can use the initial geometry (if one or more changes have taken place as mentioned above) of initial geometry consistent or change to form the patterned layer 58 of photomask 52 with the geometric figure that predicts the outcome of being satisfied with.For the purpose of this argumentation, this initial geometry consistent with the satisfied geometric figure that predicts the outcome or the initial geometry of change can be described as " selected geometric figure ".In step 312, can revise selected geometric figure by the particular offset of extending, to generate the selected geometric figure of revising along selected geometric periphery (and within).Have again, can based on during the formation of photomask 52, be used for forming the relevant overetched desired distance of geometric etch process and determine the distance that is offset in patterned layer 58.Therefore, if selected geometric figure be definition in mask pattern file 208 initial geometry (for example, if do not change initial geometry in step 310), then the selected geometric figure of Xiu Zhenging just may be identical with the Modified geometrical figure of determining in step 302.
In step 314, the selected geometric figure that can utilize correction is carried out imaging process is used to set up the photo blanks of photomask 52 with exposure the zone of resist layer as input.In some cases, the geometric figure of exposure area can be basic identical with the simulation geometric figure of determining in step 304.In step 316, can develop and remove the exposed region of resist layer, with the zone of the following absorption layer that exposes photo blanks.The geometric figure of the exposed region of absorption layer can be with basic identical by the geometric figure that imaging process exposed in step 314.In step 318, can carry out one or more etch processes (for example) to the exposed region of absorption layer removing the zone of absorption layer, and form the patterned layer 58 of photomask 52 by the open area in the resist layer above the exposed region of absorption layer.Because overetched influence, the zone of the comparable absorption layer that exposes in step 316 of the actual area of the absorption layer that is removed by etch process is big.In some cases, the geometric figure of the actual area of the absorption layer that removes by etch process can to determine that in step 308 the satisfied geometric figure that predicts the outcome is similar substantially.
Although described disclosed embodiment in detail, should be understood that and can carry out various changes, replacement and variation embodiment, and the spirit and scope that do not break away from them.
Claims (21)
1. the method for an analyzing photomask geometries comprises:
Reception will be formed on the initial geometry in the absorption layer of photo blanks;
Revise initial geometry to generate the geometric figure of revising, the geometric figure of this correction is included in the geometric figure that departs from initial geometry at least one direction;
Simulate to determine the geometric figure of simulation based on the geometric figure of revising, if the geometric figure of use revising is as the input that is used for the imaging resist layer, then the geometric figure of this simulation comprises the geometric simulation and forecast that will be imaged onto on the resist layer of photo blanks; With
Revise the initial geometry of the geometric figure of simulation with generation forecast, if to having carried out etch process by the zone of the absorption layer of the geometric figure definition of simulation, then Yu Ce initial geometry comprises the geometric prediction that will be formed in the absorption layer of photo blanks.
2. method as claimed in claim 1, wherein:
This initial geometry comprises first periphery; With
The geometric figure of this correction comprises second periphery, and the specific distance of the first periphery skew one of second periphery and initial geometry is so that second periphery is positioned at first periphery.
3. method as claimed in claim 2, wherein second periphery departs from first a peripheral specific range of the initial geometry around first periphery fully.
4. method as claimed in claim 2, wherein based on the relevant overetched known distance of etch process that during photomask forms, uses, determine the specific range of the skew between second peripheral and first periphery.
5. method as claimed in claim 1 is wherein simulated to determine that the geometric figure of simulating comprises based on the geometric figure of revising and is utilized one or more Gaussian functions.
6. method as claimed in claim 1 is wherein simulated to determine that the geometric figure of simulating comprises asking for the geometric figure that will revise based on the geometric figure of revising and is imaged onto the approximate of geometry deformation relevant in the resist layer of photo blanks.
7. method as claimed in claim 1, the geometric figure of wherein revising simulation comprise being created on the initial geometry of generation forecast and depart from the geometric geometric figure of simulation at least one direction.
8. method as claimed in claim 7, wherein:
The geometric figure of simulation comprises first periphery; With
The initial geometry of prediction comprises second periphery, and second periphery departs from a specific range so that first periphery is positioned at second periphery with geometric first periphery of simulation.
9. method as claimed in claim 8, wherein second periphery of Yu Ce initial geometry departs from the simulation geometric first peripheral specific range around first periphery fully.
10. method as claimed in claim 8, wherein based on the relevant overetched known distance of etch process that during the processing of the absorption layer of photo blanks, uses, determine the specific range of the skew between second periphery and first periphery.
11. method as claimed in claim 7, wherein:
Initial geometry comprises first periphery;
The geometric figure of revising comprises second periphery, and this second periphery departs from first a peripheral specific range of initial geometry so that second periphery is positioned within first periphery.
The geometric figure of simulation comprises the 3rd periphery; With
The initial geometry of prediction comprises the surrounding, and the geometric the 3rd a peripheral specific range of simulation is departed from so that the 3rd periphery is positioned within the surrounding in the surrounding.
12. method as claimed in claim 1, wherein:
Initial geometry comprises the specific part with interior angle and exterior angle, and wherein the exterior angle is with respect to the interior angle symmetry; With
The initial geometry of this prediction comprises the sweep consistent with the specific part of initial geometry, and the sweep of the initial geometry of prediction is asymmetric with respect to interior angle and exterior angle.
13. method as claimed in claim 1, wherein:
Initial geometry comprises first linear segment; With
The initial geometry of prediction comprises second linear segment, second linear segment and basically colocated consistent with first linear segment of initial geometry.
14. method as claimed in claim 1 further comprises at least a portion of changing initial geometry based on the prediction initial geometry of determining.
15. method as claimed in claim 1, wherein the absorption layer of photo blanks is opaque substantially.
16. method as claimed in claim 1, if the geometric figure of wherein use revising as the input of pattern imaging tool, then Mo Ni geometric figure comprises the geometric figure that is imaged onto the simulation on the resist layer of photo blanks is predicted.
17. method as claimed in claim 1, if the geometric figure of wherein use revising is used for forming patterned layer at the absorption layer of photo blanks as input, then Yu Ce initial geometry comprises the geometric prediction that will be formed in the absorption layer of photo blanks.
18. a method that is used for analyzing photomask geometries comprises:
Receive the data that define the initial geometry in the absorption layer that will be formed on photo blanks;
The data that automatic processing is received based on initial geometric figure are to generate the geometric figure of revising, and this Modified geometrical figure is included in the geometric figure that departs from initial geometry at least one direction;
Carry out the computerize simulation to determine the geometric figure of simulation based on the geometric figure of revising, if the geometric figure of use revising is as the input of imaging resist layer, then the geometric figure of this simulation comprises the geometric prediction that will be imaged onto on the resist layer of photo blanks; With
Automatically revise the initial geometry of the geometric figure of simulation with generation forecast, if to carrying out etch process by the zone of the absorption layer of the geometric figure definition of simulation, then the initial geometry of this prediction comprises the geometric prediction that will be formed in the absorption layer of photo blanks.
19. a method that forms photomask comprises:
Reception will be formed on the initial geometry in the absorption layer of photo blanks;
Revise initial geometry to generate the geometric figure of revising, the geometric figure of this correction is included in the geometric figure that departs from initial geometry at least one direction;
Simulate to determine the geometric figure of simulation based on the geometric figure of revising, if the geometric figure of use revising is as the input of imaging resist layer, then the geometric figure of this simulation comprises the geometric simulation and forecast that will be written in the resist layer of photo blanks;
Revise the initial geometry of the geometric figure of simulation with generation forecast, if to carrying out etch processes by the zone of the absorption layer of the geometric figure definition of simulation, then the initial geometry of this prediction comprises the geometric prediction that will be formed in the absorption layer of photo blanks;
Change at least a portion initial geometry based on the prediction initial geometry that generates;
The initial geometry of utilize changing is as input be used to expose one or more parts of resist layer of photo blanks;
One or more expose portions of the resist layer of development photo blanks are with one or more parts of the absorption layer that exposes photo blanks; With
Carry out etch processes with one or more expose portions of the absorption layer that removes photo blanks to form patterned layer.
20. one kind comprises the photomask that is formed on the optical mask pattern in the absorption layer, at least a portion optical mask pattern is by following formation:
Reception will be formed on the initial geometry in the absorption layer of photo blanks;
Revise initial geometry to generate the geometric figure of revising, the geometric figure of this correction is included in the geometric figure that departs from initial geometry at least one direction;
Simulate to determine the geometric figure of simulation based on the geometric figure of revising, if the geometric figure of use revising is as the input of imaging resist layer, then the geometric figure of this simulation comprises the geometric figure that is written to the simulation in the resist layer of photo blanks is predicted;
Revise the initial geometry of the geometric figure of simulation with generation forecast, if to carrying out etch processes by the zone of the absorption layer of the geometric figure definition of simulation, then the initial geometry of this prediction comprises the geometric prediction that will be formed in the absorption layer of photo blanks;
Change at least a portion initial geometry based on the prediction initial geometry that generates;
The initial geometry of revising change is to generate the change geometric figure of revising, and the change geometric figure of this correction is included in the geometric geometric figure that departs from change at least one direction;
The change initial geometry of utilize revising is as input be used to expose one or more parts of resist layer of photo blanks;
One or more exposed portions of the resist layer of development photo blanks are with one or more parts of the absorption layer that exposes photo blanks; With
Carry out etch processes with one or more expose portions of the absorption layer that removes photo blanks to form patterned layer.
21. a system that is used for analyzing photomask geometries comprises:
Computer system with processor; With
Be coupled to the computer-readable medium of computer system, this computer-readable medium comprises software, when being carried out by processor, can operate:
Reception will be formed on the initial geometry in the absorption layer of photo blanks;
Revise initial geometric figure to generate the geometric figure of revising, the geometric figure of this correction is included in the geometric figure that departs from initial geometry at least one direction;
Simulate to determine the geometric figure of simulation based on the geometric figure of revising, if the geometric figure of use revising is as the input of imaging resist layer, then the geometric figure of this simulation comprises the geometric figure that is written to the simulation in the resist layer of photo blanks is predicted;
Revise the initial geometry of the geometric figure of simulation with generation forecast, if to having carried out etch processes by the zone of the absorption layer of the geometric figure definition of simulation, then the initial geometry of this prediction comprises the geometric prediction that will be formed in the absorption layer of photo blanks.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US61588104P | 2004-10-05 | 2004-10-05 | |
| US60/615,881 | 2004-10-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101073084A true CN101073084A (en) | 2007-11-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005800417269A Pending CN101073084A (en) | 2004-10-05 | 2005-10-05 | System and method for analyzing photomask geometries |
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| Country | Link |
|---|---|
| JP (1) | JP2008516272A (en) |
| CN (1) | CN101073084A (en) |
| WO (1) | WO2006041868A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103246174A (en) * | 2012-02-07 | 2013-08-14 | Asml荷兰有限公司 | Substrate-topography-aware lithography modeling |
| CN112580293A (en) * | 2020-12-18 | 2021-03-30 | 全芯智造技术有限公司 | Method, apparatus and computer-readable storage medium for generating circuit layout |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6444373B1 (en) * | 2000-06-16 | 2002-09-03 | Advanced Micro Devices, Inc. | Modification of mask layout data to improve mask fidelity |
| US6596444B2 (en) * | 2000-12-15 | 2003-07-22 | Dupont Photomasks, Inc. | Photomask and method for correcting feature size errors on the same |
-
2005
- 2005-10-05 WO PCT/US2005/035737 patent/WO2006041868A1/en active Application Filing
- 2005-10-05 CN CNA2005800417269A patent/CN101073084A/en active Pending
- 2005-10-05 JP JP2007534898A patent/JP2008516272A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103246174A (en) * | 2012-02-07 | 2013-08-14 | Asml荷兰有限公司 | Substrate-topography-aware lithography modeling |
| CN103246174B (en) * | 2012-02-07 | 2014-12-10 | Asml荷兰有限公司 | Substrate-topography-aware lithography modeling |
| US8918744B2 (en) | 2012-02-07 | 2014-12-23 | Asml Netherlands B.V. | Substrate-topography-aware lithography modeling |
| CN112580293A (en) * | 2020-12-18 | 2021-03-30 | 全芯智造技术有限公司 | Method, apparatus and computer-readable storage medium for generating circuit layout |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2006041868A1 (en) | 2006-04-20 |
| JP2008516272A (en) | 2008-05-15 |
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