CN101064325A - CMOS image sensor pixels - Google Patents
CMOS image sensor pixels Download PDFInfo
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- CN101064325A CN101064325A CN 200610026245 CN200610026245A CN101064325A CN 101064325 A CN101064325 A CN 101064325A CN 200610026245 CN200610026245 CN 200610026245 CN 200610026245 A CN200610026245 A CN 200610026245A CN 101064325 A CN101064325 A CN 101064325A
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- metal
- image sensor
- cmos image
- play amount
- pixel
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Abstract
The invention discloses a CMOS image sensor pels, thereinto, said pixel array at least includes a layer of metal, left-hand metal shift right, right-hand metal shift left, offset of said left-hand metal and right-hand metal are equal, or the offset is within 0. 2 micron. The invention can make metal layer not keep out incidence light, but also reduce the workload and difficulty of designing territory.
Description
Technical field
The present invention relates to a kind of CMOS (complementary metal oxide semiconductors (CMOS)) image sensor pixel.
Background technology
Cmos image sensor has integrated level height, low in energy consumption, advantage such as cost is low for CCD (charge coupled device), obtained application more and more widely.Along with scientific and technological progress and market demand, the resolution of cmos image sensor is more and more higher, and pixel size is more and more littler, has reached 2.2 microns, even littler.Can cause a series of problems in the so little pixel, one of them is exactly that metal level can block incident light, not only makes pixel sensitivity reduce, and metal can reflect and scatter incident light, causes noise.In order to address this problem, the someone proposes the metal level of each pixel is made certain deviation with respect to photosensitive area, and the metal level side-play amount difference of each pixel, reaches the purpose of effective reduction metal level shading.
But this way also has its limitation.As shown in Figure 1, because the metal level side-play amount difference of each pixel, so their domain all is not quite similar.Not only increased the workload of layout design, and in some cases, can't realize at all, it is more all the more so especially to work as number of metal.
Summary of the invention
Technical problem to be solved by this invention provides a kind of cmos image sensor pixel, and it both can make the metal level in the pixel can not block incident light, can effectively reduce the workload and the difficulty of layout design again.
In order to solve the problems of the technologies described above, cmos image sensor pixel of the present invention is to adopt following technical scheme to realize, layer of metal at least in the cell array, and the metal in left side is offset to the right, and the metal on right side is offset left; The metal side-play amount on the metal in described left side and right side equates, or its side-play amount differs smaller or equal to 0.2 micron.
Another technical scheme that cmos image sensor pixel of the present invention adopts is, layer of metal at least in the cell array, and the metal of upside offsets downward, and the metal of downside is skew upwards; The metal side-play amount of the metal of described upside and downside equates, or its side-play amount differs smaller or equal to 0.2 micron.
Adopt after the cmos image sensor pixel of the present invention, because the side-play amount of the metal of each pixel equates that substantially so the difficulty of layout design reduces, workload reduces, but also can reach the effect of not blocking incident light.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment:
Fig. 1 is the cell array sectional view that the metal level of pixel adopts different side-play amounts in the prior art;
Fig. 2 is the cell array sectional view that the metal level of pixel of the present invention adopts the mirror image skew;
Fig. 3 adopts metal level of the present invention to make an embodiment schematic diagram of mirror image skew.
Embodiment
As shown in Figure 2, cmos image sensor pixel of the present invention in the prior art metal level of each pixel being made the different existing limitation of method that are offset with respect to photosensitive area, has proposed the theory of mirror image skew layout design.Be certain one deck or certain which floor metal in the cell array, be divided into the metal in left side and the metal on right side with respect to the line of demarcation of a certain position; Wherein, the metal in left side is offset to the right, and the metal on right side is offset left; The metal side-play amount on the metal in described left side and right side both can be equal fully, also can be unequal; But when its side-play amount is unequal, differ, reach equal haply smaller or equal to 0.2 micron.
Another technical scheme that the present invention adopts is, layer of metal at least in the cell array, and the metal of upside offsets downward, and the metal of downside is skew upwards; The metal side-play amount of the metal of described upside and downside equates, or its side-play amount differs smaller or equal to 0.2 micron.
In one embodiment of the present of invention shown in Figure 3, only the ground floor metal is done the mirror image skew.For convenience of explanation, omit all unnecessary domains among the figure, only kept photosensitive region (square region among Fig. 3) and ground floor metal (the vertical rectangle among Fig. 3).Be the cell array of a 4X7 shown in the figure, the dotted line of central authorities is represented the center line of array vertical direction.As shown in Figure 3, the ground floor metal becomes the mirror image symmetry with respect to center line, promptly does a certain amount of skew to the midline from the right and left, and its side-play amount is equal, reaches the purpose of not blocking incident light.
Do not adopting when of the present invention, be positioned at the central authorities of cell array, the light vertical incidence, and hot spot is usually less than the opening of metal, so metal level can not block incident light; Along with the position of pixel is far away more from center line, the incidence angle of light is big more, and the possibility of being blocked by metal level is also big more.And behind employing the present invention, the metal level of pixel has an admedian side-play amount, has got out of the way light path, makes incident ray can project photosensitive region unblockedly; And incidence angle is big more, and light is not easy to be blocked more.
The present invention is not only applicable to the ground floor metal, is applicable to the metal of other layers yet, nor is confined to layer of metal, can be which floor metal is offset together yet.
The present invention has reduced the difficulty and the workload of layout design greatly under the prerequisite of not blocking incident light.
Claims (2)
1, a kind of cmos image sensor pixel is characterized in that: layer of metal at least in the cell array, and the metal in left side is offset to the right, and the metal on right side is offset left; The metal side-play amount on the metal in described left side and right side equates, or its side-play amount differs smaller or equal to 0.2 micron.
2, a kind of cmos image sensor pixel is characterized in that: layer of metal at least in the cell array, and the metal of upside offsets downward, and the metal of downside is skew upwards; The metal side-play amount of the metal of described upside and downside equates, or its side-play amount differs smaller or equal to 0.2 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610026245 CN101064325A (en) | 2006-04-29 | 2006-04-29 | CMOS image sensor pixels |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610026245 CN101064325A (en) | 2006-04-29 | 2006-04-29 | CMOS image sensor pixels |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101064325A true CN101064325A (en) | 2007-10-31 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610026245 Pending CN101064325A (en) | 2006-04-29 | 2006-04-29 | CMOS image sensor pixels |
Country Status (1)
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| CN (1) | CN101064325A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104253136A (en) * | 2013-06-28 | 2014-12-31 | 索尼公司 | Solid-state imaging device and electronic device |
-
2006
- 2006-04-29 CN CN 200610026245 patent/CN101064325A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104253136A (en) * | 2013-06-28 | 2014-12-31 | 索尼公司 | Solid-state imaging device and electronic device |
| CN104253136B (en) * | 2013-06-28 | 2018-12-14 | 索尼公司 | Solid state image pickup device and electronic equipment |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |