CN101038946A - Semiconductor quantum point/quantum well conduction band inner transition material structure - Google Patents
Semiconductor quantum point/quantum well conduction band inner transition material structure Download PDFInfo
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- CN101038946A CN101038946A CNA2006100648823A CN200610064882A CN101038946A CN 101038946 A CN101038946 A CN 101038946A CN A2006100648823 A CNA2006100648823 A CN A2006100648823A CN 200610064882 A CN200610064882 A CN 200610064882A CN 101038946 A CN101038946 A CN 101038946A
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Abstract
The invention provides a material structure of semiconductor quantum dot/quantum well transition within carrying belt, which is characterized by including: a lower barrier layer which serves as a barrier of the quantum well to be mentioned in following; a quantum well layer which is arranged on the lower barrier layer and whose band gap is less than the same of the alternation barrier layer to be mentioned in following; an alternation barrier layer arranged on the quantum well layer and which serves as a barrier of the quantum well layer and the quantum dot layer to be mentioned in following to separate the two layers; a quantum dot layer arranged on the alternation barrier layer, and within which 3-d quantized discrete level can be formed by interaction of the alternation barrier layer and the upper barrier layer to mentioned in following; an upper barrier layer arranged on the quantum dot layer and which serves as a barrier of quantum dot layer.
Description
Technical field
The present invention relates to a kind of novel multilayered semiconductor quantum structure, be specially a kind of semiconductor quantum point/quantum well conduction band inner transition material structure, belong to the Semiconductor Optic Electronics field.
Background technology
The semiconductor light-emitting device (particularly laser) and the light-detecting device that are operated in the mid and far infrared wave band have crucial application in national defence, the development of the national economy and scientific research.Bell Laboratory was (referring to people Science vol.264 such as J.Faist in 1994, pp.553-556) at first succeed in developing quantum cascade laser, opened up the frontier of mid and far infrared semiconductor laser research based on (or being called intersubband) transition in the multiple-active-region tandem quantum well band.But will accurately controlling nearly in the growth course of cascade structure, hundreds of makes that to the component and the thickness of thousands of layers of epitaxial loayer the material growth difficulty of quantum cascade laser is very big.Because electronics and the interactional phonon bottleneck effect of vertical optical phonon in the quantum dot make and realize that at the quantum dot intersubband population inversion is more prone to than quantum well.Based on this, J.Singh in 1996 proposed first with the quantum dot be active area intersubband transitions mid and far infrared semiconductor laser imagination (referring to J.Singh, IEEEPhoton.Technol.Lett.vol.8, pp.488-490).
Summary of the invention
The object of the present invention is to provide a kind of novel multilayered semiconductor quantum structure, be specially a kind of semiconductor quantum point/quantum well conduction band inner transition material structure.This structure mainly comprises a pair of adjacent quantum well layer and quantum dot layer, and the barrier layer that surrounds them.The concrete material parameter of this structure is provided.This invention structure is utilized in the adjacent quantum well layer transition within the electron energy level conduction band in the electron energy level and quantum dot layer to realize the detection (electronics from the lower quantum dot layer of energy in electron energy level transition of electronic energy in the higher quantum well layer of energy) of mid and far infrared light wave or is launched (electron energy level transition of electronic energy in the lower quantum dot layer of energy in the electronics quantum well layer higher from energy).This structure can be applicable to the active area of mid and far infrared semiconductor light-emitting device or light-detecting device.
The present invention relates to a kind of semiconductor quantum point/quantum well conduction band inner transition material structure, it is characterized in that, comprising:
One lower barrierlayer, this lower barrierlayer are the potential barriers of following quantum well layer;
One quantum well layer, this quantum well layer is positioned at above the lower barrierlayer, and the band gap of this quantum well layer is less than the band gap of above-mentioned lower barrierlayer and following interval barrier layer;
One interval barrier layer, this interval barrier layer is positioned at above the quantum well layer, and this interval barrier layer separates quantum well layer and quantum dot layer as the potential barrier of above-mentioned quantum well layer and following quantum dot layer simultaneously;
One quantum dot layer, this quantum dot layer are positioned at interval above the barrier layer, above-mentioned interval barrier layer and following under the barrier layer acting in conjunction, in this quantum dot layer, will form three-dimensional quantized discrete energy levels;
Barrier layer on one, barrier layer is positioned at above the quantum dot layer on this, is the potential barrier of quantum dot layer.
Wherein lower barrierlayer is a GaAs material.
Wherein quantum well layer is the InGaAsP material, and its thickness is the 1-10 nanometer, and the indium component is 0.1-0.3.
Wherein barrier layer is the aluminum gallium arsenide material at interval, and its thickness is the 1-10 nanometer, and al composition is 0-0.5.
Wherein quantum dot layer is the InGaAsP material, and its thickness is the 1.1-5 monolayer, and the indium component is 0.5-1.0.
Wherein going up barrier layer is GaAs material.
Wherein this material structure can be applicable to the active area of mid and far infrared semiconductor light-emitting device, particularly laser or light-detecting device.
Description of drawings
For further specifying content of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 is the quantum point/quantum well conduction band inner transition material structure schematic diagram;
Fig. 2 is a quantum point/quantum well conduction band inner transition material structure conduction band energy band diagram.
Embodiment
Please, the present invention relates to a kind of novel multilayered semiconductor quantum structure, be specially a kind of semiconductor quantum point/quantum well conduction band inner transition material structure, specifically implement as described below in conjunction with consulting Fig. 1 and Fig. 2.
Semiconductor quantum point/quantum well conduction band inner transition material structure of the present invention specifically comprises:
One lower barrierlayer 1, this lower barrierlayer 1 is a GaAs material, this lower barrierlayer 1 is the potential barrier of following quantum well layer 2, the effect of charge carrier in the restricted quantum well layer 2;
One quantum well layer 2, this quantum well layer 2 is positioned at above the lower barrierlayer 1, and this quantum well layer 2 is the InGaAsP material, and its thickness is the 1-10 nanometer, the indium component is 0.1-0.3, and the band gap of this quantum well layer 2 is less than the band gap of above-mentioned lower barrierlayer 1 and following interval barrier layer 3;
One interval barrier layer 3, this interval barrier layer 3 is positioned at above the quantum well layer 2, this interval barrier layer 3 is the aluminum gallium arsenide material, its thickness is the 1-10 nanometer, al composition is 0-0.5, this interval barrier layer 3 separates quantum well layer 2 and quantum dot layer 4 as the potential barrier of above-mentioned quantum well layer 2 and following quantum dot layer 4 simultaneously, and the effect that limits charge carrier in quantum well layer 2 and the quantum dot layer 4 is simultaneously arranged;
One quantum dot layer 4, this quantum dot layer 4 is positioned at above the barrier layer 3 of interval, and this quantum dot layer 4 is the InGaAsP material, and its thickness is the 1.1-5 monolayer, the indium component is 0.5-1.0, and the band gap of this quantum dot layer 4 is less than above-mentioned interval barrier layer 3 and the following band gap that goes up barrier layer 5;
Material structure of the present invention is as shown in table 1
Table 1
| Material | Thickness | The al composition of aluminum gallium arsenide material | The indium component of InGaAsP material | |
| | GaAs | |||
| | InGaAsP | The 1-10 nanometer | 0.1- 0.3 | |
| | Aluminum gallium arsenide | The 1-10 nanometer | 0-0.5 | |
| | InGaAsP | 1.1-5 monolayer | 0.5- 1.0 | |
| | GaAs |
Please in conjunction with consulting Fig. 2, under the common restriction of lower barrierlayer 1 and interval barrier layer 3, perpendicular to forming quantized discrete energy levels 21 on the dimension of quantum well aspect, and be parallel on two other dimension of quantum well aspect in quantum well layer 2, energy still is a continuous distribution.Under the common restriction of interval barrier layer 3 and last barrier layer 5, in quantum dot layer 4, form three-dimensional quantized discrete energy levels 41.
If be injected into electronics on the energy level 21 of quantum well layer 2 from lower barrierlayer 1 top, have electronics on the energy level 21 of higher-energy and will transit to by photoemissive mode and have on the more low-energy energy level 41, launch the photon of a wavelength simultaneously in mid and far infrared wave band (emission wavelength is specifically by above-mentioned each layer thickness and component decision).Utilize this principle, can be the active area of the semiconductor quantum point/quantum well conduction band inner transition material structure applications of foregoing invention in mid and far infrared semiconductor light-emitting device (particularly laser).
Otherwise, if with a branch of and energy level 21 to the corresponding mid and far infrared light-wave irradiation of energy level 41 transition energies in quantum dot layer 4, the electronics in the quantum dot layer 4 on the energy level 41 will absorb this light wave and transit on the energy level 21 in the quantum well layer 2.If there is extra electric field to exist, the electronics in the energy level 21 just can break away from quantum well layer 2 and form photogenerated current or photovoltage.Utilize this principle, can be the semiconductor quantum point/quantum well conduction band inner transition material structure applications of foregoing invention in the active area of mid and far infrared optical semiconductor sensitive detection parts.
The material structure of a kind of novel quantum point/quantum well conduction band inner transition that the present invention proposes, its transition occur between quantum well interior the conduction band electron high level and the conduction band electron low-lying level in the quantum dot.The favorable factor of having utilized interior phonon bottleneck effect of three-dimensional restriction quantum dot and quantum well conduction band electronics high level that the higher density of states is arranged than quantum dot conduction band electron high level so simultaneously, make band interior (or claiming intersubband) population inversion be more prone to realize that more simple quantum well or quantum dot intersubband transitions structure are more superior.This invention structure also can be applied to the active area of the optical semiconductor detector of mid and far infrared wave band in addition.
Claims (7)
1, a kind of semiconductor quantum point/quantum well conduction band inner transition material structure is characterized in that, comprising:
One lower barrierlayer, this lower barrierlayer are the potential barriers of following quantum well layer;
One quantum well layer, this quantum well layer is positioned at above the lower barrierlayer, and the band gap of this quantum well layer is less than the band gap of above-mentioned lower barrierlayer and following interval barrier layer;
One interval barrier layer, this interval barrier layer is positioned at above the quantum well layer, and this interval barrier layer separates quantum well layer and quantum dot layer as the potential barrier of above-mentioned quantum well layer and following quantum dot layer simultaneously;
One quantum dot layer, this quantum dot layer are positioned at interval above the barrier layer, above-mentioned interval barrier layer and following under the barrier layer acting in conjunction, in this quantum dot layer, will form three-dimensional quantized discrete energy levels;
Barrier layer on one, barrier layer is positioned at above the quantum dot layer on this, is the potential barrier of quantum dot layer.
2, semiconductor quantum point/quantum well conduction band inner transition material structure according to claim 1 is characterized in that, wherein lower barrierlayer is a GaAs material.
3, semiconductor quantum point/quantum well conduction band inner transition material structure according to claim 1 is characterized in that, wherein quantum well layer is the InGaAsP material, and its thickness is the 1-10 nanometer, and the indium component is 0.1-0.3.
4, semiconductor quantum point/quantum well conduction band inner transition material structure according to claim 1 is characterized in that, wherein barrier layer is the aluminum gallium arsenide material at interval, and its thickness is the 1-10 nanometer, and al composition is 0-0.5.
5, semiconductor quantum point/quantum well conduction band inner transition material structure according to claim 1 is characterized in that, wherein quantum dot layer is the InGaAsP material, and its thickness is the 1.1-5 monolayer, and the indium component is 0.5-1.0.
6, semiconductor quantum point/quantum well conduction band inner transition material structure according to claim 1 is characterized in that, wherein going up barrier layer is GaAs material.
7, according to the described semiconductor quantum point/quantum well conduction band inner transition material structure of claim 1-6, it is characterized in that wherein this material structure can be applicable to the active area of mid and far infrared semiconductor light-emitting device, particularly laser or light-detecting device.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100589012C (en) * | 2007-10-17 | 2010-02-10 | 中国科学院半导体研究所 | Active region structure of quanta point light modulator |
| CN102130246A (en) * | 2011-01-14 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Multiple quantum well (MQW) structure, light-emitting diode (LED) and LED package |
| CN102306667A (en) * | 2011-09-07 | 2012-01-04 | 清华大学 | Wavelength up-conversion semiconductor structure and optical detection method thereof |
| CN102439662A (en) * | 2009-05-22 | 2012-05-02 | 三星电子株式会社 | Optical memory device and method of recording/reproducing information by using the same |
| CN102047428B (en) * | 2008-03-12 | 2013-01-09 | 卧龙岗大学 | A new type of gapless semiconductor material |
| CN105934832A (en) * | 2014-01-27 | 2016-09-07 | Qd激光公司 | Semiconductor light-emitting element |
| CN106170690A (en) * | 2015-03-18 | 2016-11-30 | 株式会社东芝 | Breath analysis device |
| CN106340553A (en) * | 2016-10-26 | 2017-01-18 | 中国科学院半导体研究所 | Quantum cascaded infrared detector with inclined transition-microstrip type electron transmission channel |
| CN109244177A (en) * | 2018-08-19 | 2019-01-18 | 天津大学 | A kind of semiconductor light-controlled Terahertz quantum trap oscillator |
| CN112135503A (en) * | 2019-06-24 | 2020-12-25 | 禾达材料科技股份有限公司 | Electromagnetic wave shield and transmission line assembly using the same |
| CN112135502A (en) * | 2019-06-24 | 2020-12-25 | 禾达材料科技股份有限公司 | Electromagnetic wave shield and transmission line assembly using the same |
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2006
- 2006-03-16 CN CNA2006100648823A patent/CN101038946A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100589012C (en) * | 2007-10-17 | 2010-02-10 | 中国科学院半导体研究所 | Active region structure of quanta point light modulator |
| CN102047428B (en) * | 2008-03-12 | 2013-01-09 | 卧龙岗大学 | A new type of gapless semiconductor material |
| US8755240B2 (en) | 2009-05-22 | 2014-06-17 | Samsung Electronics Co., Ltd. | Optical memory device and method of recording/reproducing information by using the same |
| CN102439662A (en) * | 2009-05-22 | 2012-05-02 | 三星电子株式会社 | Optical memory device and method of recording/reproducing information by using the same |
| CN102130246A (en) * | 2011-01-14 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Multiple quantum well (MQW) structure, light-emitting diode (LED) and LED package |
| CN102306667A (en) * | 2011-09-07 | 2012-01-04 | 清华大学 | Wavelength up-conversion semiconductor structure and optical detection method thereof |
| CN102306667B (en) * | 2011-09-07 | 2013-06-12 | 清华大学 | Wavelength up-conversion semiconductor structure and optical detection method thereof |
| CN105934832A (en) * | 2014-01-27 | 2016-09-07 | Qd激光公司 | Semiconductor light-emitting element |
| CN105934832B (en) * | 2014-01-27 | 2018-12-28 | Qd激光公司 | Semiconductor light-emitting elements |
| CN106170690A (en) * | 2015-03-18 | 2016-11-30 | 株式会社东芝 | Breath analysis device |
| CN106340553A (en) * | 2016-10-26 | 2017-01-18 | 中国科学院半导体研究所 | Quantum cascaded infrared detector with inclined transition-microstrip type electron transmission channel |
| CN106340553B (en) * | 2016-10-26 | 2018-02-13 | 中国科学院半导体研究所 | Electron transport passage is the quanta cascade infrared detector of oblique transition microstrip type |
| CN109244177A (en) * | 2018-08-19 | 2019-01-18 | 天津大学 | A kind of semiconductor light-controlled Terahertz quantum trap oscillator |
| CN112135503A (en) * | 2019-06-24 | 2020-12-25 | 禾达材料科技股份有限公司 | Electromagnetic wave shield and transmission line assembly using the same |
| CN112135502A (en) * | 2019-06-24 | 2020-12-25 | 禾达材料科技股份有限公司 | Electromagnetic wave shield and transmission line assembly using the same |
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