The application requires in the 60/522nd of proposition on August 21st, 2004, No. 151 U.S. Provisional Patent Application, on September 3rd, 2004 propose the 60/522nd, No. 239 U.S. Provisional Patent Application, on August 5th, 2005 propose the 11st, 161, No. 499 U.S. Patent applications and on August 20th, 2005 propose the 11st, the right of priority of 161, No. 887 U.S. Patent applications, all above-mentioned these all as with reference to file include in this.
Embodiment
The present invention and claimed theme thereof are to make a kind of display work that comprises light-emitting component.
The invention provides active matrix pixel circuit and driving method thereof.This circuit comprises by two conducting channels in the pixel of the signal alternate conduction that is applied to same control electrode.The dependence of existing driving to threshold voltage variation and OLED characteristic eliminated in preferred embodiment of the present invention.The present invention also adopts the driving method of traditional electric power transfer electrode and scan electrode being merged into a single inlet electrode (scanning-power supply).Preferred embodiment in three transistorized embodiments is used for illustrating the simplification of the solution of current drives of the present invention.Other embodiment is used for explanation and implements principle.
In this explanation is that preferred embodiment of the present invention adopts Organic Light Emitting Diode as example.The visible patent No. of example of utilizing organic material to form LED is 5,482,896 the United States Patent (USP) and the patent No. are 5,408,109 United States Patent (USP), utilizing Organic Light Emitting Diode is 5 with the visible patent No. of example that forms matrix display, 684,365 the United States Patent (USP) and the patent No. are 6,157,356 United States Patent (USP), all above-mentioned patents all as with reference to file include in this.
Confirmed traditional structure light emitting device display in the prior art and made the method for its work relate to scan electrode (or being called as selection wire, gate line, or other have the title of similar meaning) and transmitting electrode (VDD).Scan electrode does not participate in to light-emitting device transmission drive current by the high-impedance gate and the pixel interaction of on-off element in the pixel.
The invention provides the method for light-emitting device in a kind of driving Active Matrix Display that need not the external power source electrode.To write the electrode and all drive currents of transmission in the course of work subsequently of the pixel of data by same electrode selection.The pixel of structure adopts scanning-power electrode like this, it transmits drive current in a time period, stop data between above-mentioned data electrode and above-mentioned pixel, to be transmitted simultaneously, and in another time period, make data write above-mentioned pixel from data electrode according to sweep signal.Gou Zao pixel is included in scanning-power electrode and conducting channel (now being called SP) between the voltage source of driving power is provided for the light-emitting device in the pixel like this.Conducting channel SP enables and disconnects fully and being controlled by the voltage signal that is applied on scanning-power electrode.
In addition, pixel of the present invention also comprises the conducting channel (now being called DP) between data electrode and the above-mentioned voltage source.Enable and disconnect conducting channel DP according to the voltage that is applied to above-mentioned scanning-power electrode.
Raceway groove SP is also referred to as second conducting channel, and raceway groove DP is called first conducting channel.
In explanation of the present invention, the direct current path is the conductive path that is not interrupted or stop by electric capacity, and it can comprise, for example resistor, transistor drain to source electrode or transmitter to current-collector, the anode of diode to negative electrode with make the continuous elements such as lead of steady current.Direct current path in this explanation is also illustrated in and enables at least one work period of display device work and conduct required electric current.Do not constitute the direct current path on the electric capacity or by the charging current that electric capacity stops.What should know is not produce the watt current path by the transient current that input grid or capacitor parasitics produce.The counter-rotating that it should be further appreciated that diode is leaked, the leakage current of transistor off state and neither the watt current path by the electric current of high impedance input contact (as substrate or grid).In this sense, the direct current path in this explanation is to conduct required electric current in order to move display pixel, and as long as the condition that is provided with continues, the current path that electric current just continues.
Scanning-power electrode is represented arrival line, its structure makes it finish the transmission sweep signal so that data are input to the scanning work of the pixel of selection in a working time section, finishes the driving work that drive current is transferred to light-emitting device in another working time section.Scan electrode represents only to finish traditional arrival line of traditional scanning (or selection) work.Scanning one of (or write data) cycle is selected pixel so that during data are transferred to selected pixel from data electrode.The data message of transmission is kept in the memory element of pixel.
As long as suitable, Organic Light Emitting Diode (OLED) is used for most of preferred embodiment; This device of Chu Xianing should not be construed as the restriction to general light-emitting device of the present invention in the above-described embodiments.Mos device is used as on-off element in preferred embodiment.Similarly diode is finished and the mos device identical functions.By replacing above-mentioned Organic Light Emitting Diode with light-emitting device arbitrarily, the person of ordinary skill in the field can promptly change.Should know be best implementation condition and optimum data form do not constitute for work foregoing circuit restriction.
Fig. 5 represents an embodiment, and wherein capacitor 504 adopts reference voltage 570 as fixing reference voltage.In cycle, scanning-power electrode is made as low in scanning (writing), and conducting p channel transistor 503 makes data to upgrade at the grid in capacitor and 501.In drive cycle, scanning-power electrode is made as height, turn-offs transistor 503, forward bias n channel transistor 501.The reference voltage of capacitor is constant, thereby response quickly writes the data in the capacitor.When foregoing circuit was worked, the additional offset voltage rising data voltage of average starting potential that need be by being approximately equal to OLED505 guaranteeing transistor 501 suitable conductings, and was arranged in the saturation region in data input cycle.
Detailed description as mentioned, as first viewpoint, preferred embodiment comprises scanning-power electrode, it utilizes first (scanning) signal and secondary signal control to carry out the selection (scanning) that data write the pixel of preserving with data.In the cycle of adopting second (driving) signal, same one scan-power electrode transmits drive current to light-emitting component.
As indicated above, as second viewpoint, the preferred embodiment that Fig. 5 provides is the embodiment that is connected the direct current path of above-mentioned scanning-power electrode and above-mentioned reference voltage by transistor 501 with light-emitting component 505.In above-mentioned drive cycle, such direct current path is according to the voltage conduction drive current of preserving in the capacitor 504.Should be noted that and in above-mentioned direct current path, also can insert multiple electronic component with further change working condition.Above-mentioned further change is not violated, as described herein, and traditional direct current path supply between scan electrode and voltage source in conjunction with the driving function of same one scan-power electrode.
The image element circuit of a preferred embodiment of the present invention comprises the first transistor 601 as shown in Figure 6, transistor seconds 602, the three transistors 603, OLED605, holding capacitor 604 and common reference voltage source V REF.Better embodiment shown in Figure 6 has two and is used for the P-channel transistor 602 of Data Control and the n-channel transistor 601 that 603 and are used to drive.
With reference to Fig. 6, in preferable Implementation Modes, the form of data message is the form of current source lw.The preferable mode of operation of this embodiment is as described below.
1. data-signal and required output.When electric current in OLED during conducting, the output of the light of OLED is considered to linear with drive current traditionally.In order to keep The Uniform Control, very need a kind of image element circuit that the input signal linearity of data electrode is converted to the output current on the OLED of design to the insensitive light output of the variation of pixel to pixel.Such translation function need be independent of the major parameter in the image element circuit, for example the variation of the forward voltage of the threshold voltage of oxide-semiconductor control transistors and OLED.Shown in prior art, known that the data-signal that can utilize the current source form finishes this conversion that is not subjected to determining positions in the above-mentioned technology better.Therefore, the focus in this discussion is to utilize the electric current on the current source lw generation OLED that is transferred to data electrode to export I
DWork.For example, in preferred versions, arbitrary data information all forms the form of data current, and wherein the brightness at the respective counts strong point of data current and display message is proportional.For example, for showing one 64 gray level image, the increment of each gray scale is all corresponding with 1/ (64-1) of the corresponding maximum current of whole brightness values.Optimal circuit and work thereof are expected to produce output current by the data current linear transformation of importing in the scan period in drive cycle.
2. scanning and data write cycles.Scanning voltage signal VLO is applied to scanning-power electrode 610, and wherein VLO is equal to or slightly less than VREF, and is set to lowest electric potential when display system is worked.Thereby, by scanning-power electrode low-voltage VLO is put on grid, p channel transistor 603 and 602 conductings.Above-mentioned scanning voltage VLO also puts on the anode of light-emitting device 605 by scanning-power electrode 610, at opposite direction biasing light emitting diode 605, thus the electric current of prevention diode.The minimum operating voltage that the VLO scanning voltage is set to system is to guarantee a) two P- channel transistors 602 and 603 conductings in the scan period, and b) no matter other what states change, and LED605 remains 0 or reverse bias.In this embodiment, I
WMiddle coded data can have multiple function relevant with output current.The preferable function that is used to illustrate is relevant to be linear dependence, and I promptly encodes
WMake it proportional with the output current linearity that needs.When p channel transistor 603 and 602 conductings, electric current lw flows to capacitor 604, capacitor 604 chargings, thereby the voltage (Vc) of the capacitor that raise.When the voltage of capacitor surpassed 601 threshold voltage, transistor 601 conductings were opened current path by 601.Because capacitor is connected with grid, any increase of capacitor 604 voltages all is applied directly to the grid of transistor 601, increased the electric current among the NMOS601 further, thereby accelerating system reaches steady state (SS).When pixel reached its end-state, the charging current of the capacitor 604 by 602 was reduced to 0,602 source contact " A " and the approaching same magnitude of voltage of drain contact " B ".This is for the grid of guaranteeing NMOS601 (connecting with 602 drain electrode) has identical electromotive force with 601 drain electrode (being connected with 602 source contact), and:
V
GS=V
DS (1)
According to the characteristic of MOS transistor, above-mentioned bias voltage guarantees 601 in the saturation region, and passes through 601 electric current (I
D) control according to following formula by grid voltage:
I
D=C
1(V
GS-V
TH)
2 (2)
V wherein
GBe the grid voltage of transistor 601, V
THBe 601 threshold voltage, C
1Be by width, length and inner parameter, for example constant of the thickness of the gate oxide of the mobility of silicon, transistor 601 and the decision of insulation constant.When the scan period will finish, divide to go into the electric current of capacitor to be decreased to 0, and except that passing through transistor 601 electric currents, the current path in all pixels all stop.Thereby impel the total data electric current by transistor 601, therefore provide
I
D=I
W (3)
3. drive cycle.The voltage V of transistor 601 to the saturation region is set data being write pixel and capacitor 604 charged to
GSVoltage (the V of electrode 610 is set afterwards,
HI) height is to being enough to make the complete forward bias of LED605, maintenance transistor 601 is in the saturation region.Voltage (V preferably
HI) typically be equal to or higher than the maximum voltage sum of the maximum forward operating voltage of LED and data electrode output.For the pixel of the dynamic data scope that comprises the OLED that works in 7.5 volt range, typical NMOS TFT and 3 volts, voltage is in the scope of the high 11-13 volt than VREF preferably.V
DDThis condition guarantee in drive cycle, to pass the drain electrode of transistor 601 and the pressure drop V of source electrode
DSWrite voltage V than what be stored in capacitor 604 in the scan period
GSHeight, thereby impel transistor 601 to enter its saturation region.Owing to electrode 610 is set,, thereby the drain contact of capacitor 604 and external data electrode and transistor 601 is isolated fully so two p channel transistors 603 and 602 all turn-off for high.Therefore the electric charge of accumulation is remained to the time that parasitic leakage current allows always in the inherent capacitor 604 of scan period.Simultaneously, the positive pole of LED605 is a positive potential with respect to VREF, so its forward bias.By the V that provides above
DDSituation and the I-V of transistorized working condition analyzed can prove V in drive cycle
DS〉=V
GSThereby transistor 601 remains on saturation mode, by obtaining I to top similar formula
D
I
D=C
2(V
GS-V
TH)
2 (4)
Because C
2One group of identical parameters decision by same transistor 601 is similar to and obtains very approaching relational expression C
2=C
1, and draw I
D=I
WThereby in drive cycle, above-mentioned work transmission and input data current I
WEquate output current.
Above the work of Miao Shuing represents to utilize the current drives pattern of preferred embodiment of the present invention.In this current drives pattern, the input data are with the form transmission of electric current.This input current at first is converted to the data voltage in data-VREF conducting channel, is converted to the output current linear with input current through driving transistors then.Generally speaking, the control circuit in the pixel is converted to input current the output current that drives the light-emitting device in the pixel.This is converted to linear transformation in this preferred forms.For the light-emitting device of its light output by the linear decision of electric current, work described here only provides and has only been exported by the light of input current Linear Control.Thereby above-mentioned preferred embodiment and work provides the solution of current drives pattern for light-emitting device, eliminated the influence of the threshold voltage of the characteristic of OLED and driving transistors.
The linear relationship that it should be noted that input and output is preferable mode of operation, but not implements necessary condition of the present invention.What should also be noted that is condition C
2=C
1Be the better embodiment of present embodiment, and the necessary condition of non-linear conversion.Typically, if in drive cycle the saturated starting point of Vds from the volt-ampere curve increase and further drift to saturated, then C2 than C1 height a bit, the V in the wherein above-mentioned curve
DSEqual V
GSAnd above-mentioned voltage is as the data voltage in the scan period and be stored in capacitor.This increase typically ascribes the adjustment of channel length, the high feedback of drain junction and the reverse channel conduction in the thin film transistor (TFT) to.In driving work, when the input data near the maximal value of data area and a little more than other V
GSThe time, V
DSEqual V
GS
From above-mentioned working method, preferred embodiment shown in Figure 6 is represented to enable or stop the data input and to the scanning-power electrode 610 of light emitting diode transmission drive current according to the signal that applies.
The drive current that makes light-emitting component work in this embodiment is the electric current that flows to the conducting channel between scanning-power electrode 610 and the reference voltage source VREF.This drive current flow to light-emitting component 605 via driving transistors 601, and is calibrated by 601 grid voltage, and wherein, the grid voltage of transistor 601 is identical with the data voltage that capacitor 604 provides.
Embodiment shown in Figure 6 represents that further data electrode and reference voltage source VREF are (from P3 to A, to P2, to VREF) between the first conducting channel DP, and the second conducting channel SP between scanning-power electrode and the reference voltage source VREF (from P1 to P2, to VREF).In scan period, enable conducting channel DP, according to data current I
DFrom data electrode to VREF conduction data current and the voltage of holding capacitor is set.
Preferred embodiment shown in Figure 6 also is illustrated in the drive current of the required driven for emitting lights led lighting of the interior conducting channel SP conduction of drive cycle, and writing (scanning) in the cycle in data, conducting channel DP conduction is provided with the required data current of data voltage in holding capacitor.
By the one group of concrete signal that applies that illustrates in above-mentioned preferable mode of operation, conducting channel DP is prevented from and conducting channel SP is enabled in drive cycle.Be enabled and passage SP is prevented from scanning (data) cycle internal channel DP.
In this preferable mode of operation, should be noted that above-mentioned conducting channel DP will import data current I
DBe converted to the voltage of capacitor 604 and be stored in above-mentioned capacitor.
More particularly, allow data current I
DBy conducting channel DP, just can produce voltage via transistor 601 at the drain contact place of transistor 601; Gate contact place at above-mentioned transistor 601 can produce same voltage, because transistor 602 is at scan period complete opening and the stable state pressure drop of not passing through it.Therefore, this working method and data current is converted to data voltage at the grid of transistor 601 is for storage.More particularly, the storage voltage in this preferred embodiment is to result from voltage between gate contact and the source contact, that be used for above-mentioned capacitor.
Active Matrix Display can be made of the pixel cell that present embodiment provides, and method is the above-mentioned pixel that forms by the interface between a plurality of data electrodes and a plurality of scanning-power electrode.As the example of complete display unit, the current driving circuit unit that number and output contact match is contained in one side of above-mentioned matrix display, and wherein each data electrode all connects the output contact of data driver element so that the data current signal to be provided.Scanning-power supply driver is installed in the another side of aforementioned display device matrix, and wherein above-mentioned scanning-power electrode connects the output contact of scanning-power drives unit to receive scanning impulse and drive current.
In the better embodiment of embodiment shown in Figure 6, transistor is to be formed at one deck amorphous of transparent glass substrate or the thin film transistor (TFT) (TFT) on the polysilicon.Transistor also can be formed at monocrystalline silicon substrate, can be MOS or diode component.The common reference voltage source typically passes through the successive layers 670 of the conductive material of any pixel of connection and supplies with.Organic Light Emitting Diode can be formed with micromolecule or condensate organic material layer stack.Above-mentioned ray structure typically comprises cathode layer, electron transfer layer, hole transmission layer and anode layer.An additional emission layer is usually located between electron transfer layer and the hole transmission layer to improve luminous efficacy.Typically, at first form data and scanning-power electrode, then by the photoetching of standard and the type of the above-mentioned electrode of etch processes technology limiting by depositing or apply one or more layers conductive material.In a better embodiment, memory element is by first conducting film of order preparation, dielectric film, the film formed plane-parallel capacitor of second conduction, then the structure that limits above-mentioned capacitor by the photoetching and the etch processes of standard.Typically be used for connecting the preferred approach of the multiple apparatus structure of display circuit such as of the present invention shown in Figure 6, limit component type and contact point by photoetching and etch processes.Be used to produce and realize that structure that circuit shown in Figure 6 is required and the various technology that are connected are to have to be, the example is found in as the file with reference to file include.
Memory element in this preferred embodiment also can constitute the part of grid structure, wherein the source region of the gate electrode of transistor 601 and transistor 601 crossover herein.With heavily doped N type or P type silicon be the source region of representative as capacitor bottom electrode, and gate electrode is as top electrode.Gate oxide constitutes the insulation course of capacitor.Such gate-to-source capacitor can directly be made or as the part manufacturing of intrinsic or parasitic capacitive elements.
Circuit shown in Figure 6 is represented another preferred embodiment, and wherein first conducting channel connects data electrode and scanning-power electrode, and second conducting channel connects scanning-power electrode and reference voltage source.Image element circuit shown in Figure 7 adopts n channel driver transistors 701, makes n raceway groove 702 and p raceway groove 703, holding capacitor 704 and the OLED705 of data control.In optimum mode of operation, VREF is arranged to identical with low reference voltage in the system.The scan period that writes data is by the low-voltage (V that is provided with on scanning-power electrode 710
LO) beginning, driving power is by the high voltage V that is arranged on scanning-power electrode
HIEnable; Wherein, low-voltage is equal to or slightly less than VREF, and V
HIValue than VREF the raised area is approximately equal to the maximal value of data voltage and the maximal value sum of OLED forward voltage.Can from circuit shown in Figure 6, analogize and draw the course of work and transfer function.Should be noted that in the above-described embodiments, (a) at scanning voltage (V
LO) put in the scan period of scanning-power electrode, by first conducting channel between data electrode and the scanning-power electrode data voltage is set, (b) transistor 702 in the conducting channel between data electrode and the scanning-power electrode is converted to data voltage in the identical moment with data current, and the data voltage in the memory element 704 is set.Clearer and more definite is that this transistorized grid connects drain contact as preferable working method in this better embodiment.In the voltage of scanning-power electrode was high drive cycle, transistor 702 and 703 turn-offed, and stops data path and isolated storage capacitor.Scanning-power electrode is controlled enabling of two conducting channels and is stoped.In addition, in the work of transistor 702, the contact function of drain electrode and source electrode is opposite with the qualification of scan period in drive cycle.
Another preferred embodiment among Fig. 8 is the expansion of Fig. 6, comprising additional diodes 806.In better embodiment, image element circuit comprises two p channel transistors 803 and 802, one n channel transistors 801, holding capacitor 804 and OLED805.In cycle, apply low-voltage on the scanning-power electrode 810 in scanning (writing), open p channel transistor 803 and 802, upgrade the data of the grid of capacitor and 801.Low-voltage on the electrode 810 is reversed biased diodes 806 simultaneously, thereby blocks the electric current that flows into electrode 810 arbitrarily through diode.In drive cycle, apply high pressure on the electrode 810, turn-off transistor 802 and 803, forward bias diode 806 and n channel transistor 801, thereby according to the voltage transmission drive current that is provided with on transistor 801 grids.Present embodiment provides two conducting channels similarly, and it is provided with data voltage and is come work via scanning-power electrode driven light-emitting element by data-VREF raceway groove by apply control signal on scanning-power electrode.This embodiment provides the n raceway groove to drive the common cathode structure.Yet the data voltage that writes the grid of capacitor 804 and controlling and driving transistor 801 always comprises the operating voltage of light emitting diode 805.Therefore this embodiment is used alternatingly a) data voltage that the average forward voltage offset voltage about equally with OLED805 should produce, to guarantee transistor 801 suitable conductings and to be arranged in its saturation region b) additional diodes and a c) the OLED voltage that contains of the data voltage of controlling and driving transistor 801 grids.
It should be noted that circuit working shown in Figure 8 is good when the two-way light-emitting device with bi directional conductibility replaces OLED805.The working method of this circuit provides the example of further using within the scope of the present invention.
Embodiment shown in Figure 9 is the improvement to Fig. 8.Preferred embodiment shown in Figure 9 has two p channel transistors 903 and 902, one n channel transistors 901, capacitor 904, diode 906 and OLED905.With reference to Fig. 9, second contact of holding capacitor 904 connects the source contact of transistor 901, thereby eliminates to the dependence of OLED and for the n channel driver transistors under the common cathode pattern current drives is provided.Another advantage of this embodiment is that OLED905 continues output light according to data current and is interrupted hardly in the scan period.Data current also causes light output, thereby increases effect.
The scan period of the embodiment of Fig. 9 opens to start from scanning-power electrode 910 and applies voltage, and two p channel transistors 903 of conducting and 902 remove the power supply of OLED from scanning-power electrode, and counter-rotating is provided with diode 906.The better electrical of the low pressure of scan period is flat to be equal to or slightly lower than VREF, as discussing among above-mentioned Fig. 6.When transistor 902 was opened, the electromotive force of n channel transistor 901 grids was identical with the electromotive force of the drain electrode of the electromotive force same 901 of capacitor 904 first contacts, perhaps V
DS=V
GS, impel 901 as shown in Figure 6 circuit equally to reach capacity district's beginning.Thereby the identical relational expression (1) in above-mentioned and aforementioned source, (2), (3), (4) are effective.Thereby the output current of OLED905 equals input data signal I in the drive cycle
W
Fig. 9 provides the n raceway groove to drive the common cathode structure.Be used alternatingly another diode.In addition, embodiment shown in Figure 9 needs higher operational data voltage range so that the data mode of pixel to be set.Because of the OLED905 that flows through of data current in the scan period descends 905 forward voltage, so variation should compensate the required increase of total data voltage, and assurance to write the voltage of grid of capacitor 904 and transistor 901 suitable.Can replace 902 and 903 by replacing 901 to change Fig. 9 by the n channel transistor, electrode, data current and the voltage VREF of counter-rotating diode by p channel transistor.
Another embodiment of the present invention represents that by Figure 10 wherein, image element circuit comprises three n channel transistors 1001,1002 and 1003.Image element circuit comprises first conducting channel from data electrode to VREF, and second conducting channel via light-emitting component 1005 from scanning-power electrode to VRED.With Fig. 6 in the similar preferable working method of working method discussed, VREF sets than data voltage range height, data current flows to data electrode from VREF.Have the signal V that equals or be slightly larger than VREF at scan period interscan-power electrode
HI, turn-on transistor 1002 and 1003 makes data current flow between data electrode and VREF, the grid voltage that transistor 1001 is set equates with its drain voltage.The data voltage that capacitor 1004 voltages are set is produced by the data current by transistor 1001 conduction under saturation mode.At drive cycle, this data voltage be in saturation mode with the flow through VGS of driving transistors 1001 of the mode Control current similar to the circuit working mode of Fig. 6.
Embodiment shown in Figure 11 represents that image element circuit of the present invention works in the linear zone of driving transistors 1101.In preferable working method, two p channel transistors 1103 and 1102 conductings by on scanning-power electrode, applying low-voltage.This makes data current pass through transistor 1101,1102 and 1103 and flows to voltage source V REF.Because V for two transistors
DSLess than V
GSSo transistor 1101 and 1102 is in its linear work district.1101 grid voltage promptly is stored in the voltage of capacitor 1104, and the drain electrode from 1101 is shifted via 1102.If the drift of threshold voltage causes 1101 V
TRaise, then 1101 drain voltage also drifts about to height; This makes 1101 V
GSRaise and counteracting V
TPart change.During driving, the voltage of scanning-power electrode is made as height, turn-offs also blocking capacitor 1104 of transistor 1102 and 1103.Circuit shown in Figure 11 comprises two alternately conducting channels, first conducting channel from data electrode to VREF, second conducting channel from scanning-power electrode to VRED, and via light-emitting component 1005, the scanning power supply electrode that has sweep signal or drive signal is opened one of them and is disconnected another.
Fig. 6, Fig. 7 has realized and Fig. 3-similar pixel independent current drive scheme of prior art shown in Figure 5 in the mode that three on-off elements are arranged in the pixel with preferred embodiment and preferable working method thereof shown in Figure 10.Structure of the present invention and working method do not rely on other external switches and power electrode.Offset direction that can be by changing pixel, distribution or with neighborhood pixels between combine and further expand the present invention.The following examples will provide more diverse example.
Image element circuit shown in Figure 12 comprises 3 n channel transistors 1203,1202 and 1201, holding capacitor 1204, and OLED1205, the preferable working method of diode 1206 and reference voltage VREF.VREF and arrangement and Fig. 6, Fig. 7 is similar with embodiment shown in Figure 9.In the scan period, apply high voltage on the scanning-power electrode 1210, turn-on transistor 1202 and 1203; In drive cycle, apply low-voltage.According to similar working method analysis, can prove that image element circuit shown in Figure 12 provides the current drives control identical with the circuit of Fig. 9, and in drive cycle, transmit the drive current of the electric current that equals input data signal.In addition, owing in the circuit diode is housed, the work of voltage component does not rely on the polarity of light-emitting device 1205.Thereby foregoing circuit is light emitting diode work and for placing 1205 two-way light-emitting device work good equally.By replacing three transistors 1201,1202 and 1203 with the p channel transistor, the polarity of the diode that reverses, the high low-voltage of the direction of data current and work can obtain p raceway groove version as shown in figure 12.Above-mentioned two image element circuits include the reverse diode of biasing leakage current of additional reducing, and light-emitting device can be diode or two-way light-emitting device.The better embodiment of the foregoing description and Fig. 6, the embodiment shown in 9 and 10 is similar.The person of ordinary skill in the field can analogize from the foregoing description above soon.
Be noted that at this circuit in Fig. 6 and 10 makes three transistor work, and Fig. 8, the circuit in 9 and 10 relies on the characteristic of the diode of light-emitting device to make three transistors and another diode operation.The diode that increases has weakened the dependence of operating circuit to the diode characteristic of light-emitting component, thereby makes that circuit control is more independent, and two-way light-emitting device is used wider.
About the effect of light emitting region (percentage of open area), the preferred embodiment of the holding capacitor in the image element circuit is the capacitor that is formed with as the scanning-power electrode conductor of the part of capacitor arrangement.Its representative instance be along pixel one side below scanning-power electrode, form capacitor, it has at scanning-power electrode and the insulating material thin layer that forms between the conductive layer below another.Have above-mentioned capacitor arrangement image element circuit embodiment as shown in figure 13, wherein image element circuit comprises transistor 1301,1302 and 1303, capacitor 1304, OLED1305, wherein in pixel by n n
THThe capacitor 1304 that scanning-power electrode drives connects n-1 (n-1)
ThIndividual scanning-power electrode.This image element circuit is the direct expansion of the image element circuit among Fig. 6, identical with the principle of work and the process of the circuit of Fig. 6, except the voltage of capacitor is quoted the high side voltage at adjacent scanning-power electrode place, its in the scan period of adjacent array momentary fluctuation to low-voltage.The scanning impulse that puts on scanning-power electrode be every capable pixel order data voltage is set.
Be further expression application of the present invention, Figure 14 provides another preferred embodiment.This embodiment is used to make the gate voltage of transistor 1401 to follow the trail of scanning-power electrode in the scan period.In preferable working method, if be provided with that scanning voltage equals or a little more than VREF, then when scanning voltage is applied on scanning-power electrode 1410,1402 conductings of n channel transistor also are offset to its saturation region in scan period.Thereby scan period transistor 1401 grid identical with the VREF level, this electric current working method and circuit and working method shown in Figure 10 subsequently is similar.Yet the foregoing description allows the grid voltage of transistor 1401 is arranged on any selected offset point, allows further to regulate offset voltage by regulating scanning voltage.In preferred embodiment, all transistors all are the n channel transistors.In scan period, when n channel transistor 1401,1402 and 1403 all is scanned-the voltage V of power electrode
HIDuring unlatching, pixel provides first conducting channel from data electrode to VREF, in during driving, when continuing to keep when transistor 1401 forward bias and according to the forward data voltage of its grid, pixel provides second conducting channel from VREF to scanning-power electrode.If transistor 1402 and 1403 were scanned-voltage V on the power electrode
LOTurn-off, then first conducting channel during driving in shutoff.
Here be used in that the concrete combination of transistor and OLED polarity illustrates the present invention among each embodiment.Above-mentioned these embodiment represent to realize with above-mentioned these schemes the drive scheme and the method for image element circuit.From the foregoing description, be expected the variation that obtains and expansion still within the scope of the invention.For example, in a pixel, adopt four transistors, employing is to the method for light-emitting component transmission drive current, and finish scanning with same inlet electrode and select, wherein gate voltage is set and flows into the current path that data electrode is connected with voltage source by current source, or being converted to data voltage from the driving transistors of saturation region, the embodiment that reaches pixel independent current control as described in the present invention will fall within the scope of the invention.That the person of ordinary skill in the field also knows easily is Fig. 8, and the circuit working mode among the embodiment shown in 9 and 12 does not rely on the characteristic of diode as light-emitting component.For example, after replacing OLED with two-way light-emitting device, foregoing circuit operational excellence and the advantage that obtains are the same with above-mentioned discussion.In addition, can be similar to Fig. 6, the holding capacitor that 7,9,10 embodiment is represented by the scanning-power electrode formation that connects a vicinity as shown in figure 13.
Although describe the various embodiments that adopts the principle of the invention in detail and multiple preferred forms is provided at this, the person of ordinary skill in the field can easily derive many variations, change and expansion and be still the concrete manifestation of principle disclosed by the invention.Scope of the present invention comprises all above-mentioned variations, and should not be construed as the restriction of the polarity of the number, distribution selection or the light-emitting device that are subjected to above-mentioned active component.