CN101005116B - Organic luminescence display device and method for preparing the same - Google Patents
Organic luminescence display device and method for preparing the same Download PDFInfo
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- CN101005116B CN101005116B CN2006101686095A CN200610168609A CN101005116B CN 101005116 B CN101005116 B CN 101005116B CN 2006101686095 A CN2006101686095 A CN 2006101686095A CN 200610168609 A CN200610168609 A CN 200610168609A CN 101005116 B CN101005116 B CN 101005116B
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Abstract
An organic EL display device and a method of manufacturing the same are disclosed. One embodiment of the organic EL display device includes: a light-emitting layer between a first electrode and a second electrode; a hole injection layer and a hole transport layer between the first electrode and the light-emitting layer; and a charge generation layer between the hole injection layer and the hole transport layer. The charge generation layer between the hole injection layer and the hole transport layer results in a low driving voltage, high efficiency and a long lifespan of the organic EL display device.
Description
The cross reference of related application
The application requires to enjoy the priority of on December 20th, 2005 at the korean patent application No.10-2005-0126102 of Korea S Department of Intellectual Property submission, and its disclosure all is incorporated herein by reference at this.
Technical field
The present invention relates to organic electroluminescent (EL) display device and preparation method thereof, more specifically, relate between hole injection layer and hole transmission layer and have organic EL display device of charge generation layer and preparation method thereof.
Background technology
The contrast and the fast response time that have wide visual angle, excellence as electroluminescence (EL) device of self-emitting display spare.Depend on the material that is used for forming emission layer, El element can be divided into inorganic El element and organic EL device.Organic EL device is than inorganic El element brightness height.In addition, organic EL device has lower driving voltage and response time faster than inorganic El element.And organic EL device can produce multiple color.
Usually, organic EL display device is included in the anode that forms on the substrate.Hole transmission layer (HTL), luminescent layer (EML), electron transfer layer (ETL) and negative electrode sequence stack are on HTL.HTL, EML and ETL are the organic membrane that is formed by organic compound.
When between the anode of organic EL device and negative electrode, applying voltage, be transferred to EML by HTL from the anode injected holes.On the other hand, be transferred to EML from the negative electrode injected electrons by ETL.Then, the compound exciton that produces by hole in EML and electronics.When exciton returned to their ground state, exciton made the fluorescence molecule of EML luminous and form image.
For the top emission structure organic EL display device, because device profile becomes thicker, microcavity effect increases, and the emission defective that is caused by impurity reduces.Microcavity effect is meant the path of propagating according to light, the variation of light on wavelength of being sent by the EL display device.
Yet the device of thick profile can have high driving voltage.In order to make maximizing efficiency, optimal path need be set with emission light, this light has the wavelength approaching with the original wavelength of light.This path can be set by the thickness of trim organic layer.Usually, when using thicker organic layer, obtain the light of longer wavelength easily.That is to say, obtain ruddiness by using thicker organic layer, and by using thin organic layer to obtain blue light.Therefore, the optimum thickness range of organic layer can be determined according to required light wavelength.Thickness range has preferred periodic thickness (period thickness), and therefore can obtain maximum light extraction (extraction) efficient.One-period, thickness can be too thin, and can not prevent the emission defective that caused by particle.Two cycles thickness can be too thick and can not prevents the increase of driving voltage, even this two cycles thickness can prevent the emission defective that caused by particle.
Summary of the invention
An execution mode provides organic electroluminescent (EL) display device, comprising: first electrode, second electrode, the luminescent layer that inserts between first electrode and second electrode, at the hole injection layer that inserts between first electrode and the luminescent layer, at hole transmission layer that inserts between hole injection layer and the luminescent layer and the charge generation layer that inserts between hole injection layer and hole transmission layer.
Charge generation layer can be formed by the compound shown in the following formula 1.
Formula 1
Wherein R is selected from itrile group (CN), sulfuryl (SO
2R '), sulfoxide group (SOR '), sulfonamide base (SO
2NR '
2), sulfonate group (SO
3R '), nitro (NO
2) and trifluoromethyl (CF
3); And wherein R ' is selected from C unsubstituted or that replaced by amine, acid amides, ether or ester
1-C
60Alkyl, aryl and heterocyclic group.
Charge generation layer can be by being selected from six nitriles, six azepine benzophenanthrenes, tetrafluoro-four cyano-quinone bismethane (quinodimethane) (F
4-TCNQ), FeCl
3, F
16The compound of CuPc and metal oxide forms.Metal oxide can be selected from vanadium oxide (V
2O
5), rheium oxide (Re
2O
7) and tin indium oxide (ITO).
Charge generation layer can comprise first material with lowest unoccupied molecular orbital energy level.Hole injection layer can comprise second material with highest occupied molecular orbital energy level.Difference between the lowest unoccupied molecular orbital energy level of first material and the highest occupied molecular orbital energy level of second material can be at pact-2eV to the scope of pact+2eV.
This device can comprise a plurality of pixels, and charge generation layer can be formed at least two the common layer (common layer) of these a plurality of pixels.The thickness of charge generation layer can be about 10
To about 200
The thickness of charge generation layer can be about 20
To about 80
This organic EL display device may further include the one deck at least that is selected from hole blocking layer, electron transfer layer and the electron injecting layer that is inserted between the luminescent layer and second electrode.This organic EL display device may further include the electron transfer layer that is inserted between second electrode and the luminescent layer.This organic EL display device may further include substrate, wherein forms this first electrode on this substrate.This organic EL display device can further comprise the hole blocking layer that is inserted between electron transfer layer and the luminescent layer.
Another aspect of the present invention provides the electronic device that comprises above-mentioned organic EL display device.
The manufacture method that organic EL display device is provided on the one hand again of the present invention.This method comprises: form hole injection layer on first electrode; On this hole injection layer, form charge generation layer; And on this charge generation layer, form hole transmission layer.
This method may further include: form luminescent layer on hole transmission layer; And on luminescent layer, form second electrode.This method may further include: after forming luminescent layer and before forming second electrode, form the one deck at least in hole blocking layer, electron transfer layer and the electron injecting layer.
Charge generation layer can be formed by the compound shown in the following formula 1:
Formula 1
Wherein R is selected from itrile group (CN), sulfuryl (SO
2R '), sulfoxide group (SOR '), sulfonamide base (SO
2NR '
2), sulfonate group (SO
3R '), nitro (NO
2) and trifluoromethyl (CF
3), and wherein R ' is selected from C unsubstituted or that replaced by amine, acid amides, ether or ester
1-C
60Alkyl, aryl and heterocyclic group.
Charge generation layer can be by being selected from six nitriles, six azepine benzophenanthrenes, tetrafluoro-four cyano-quinone bismethane (F
4-TCNQ), FeCl
3, F
16Compound in CuPc and the metal oxide forms.Metal oxide can be selected from vanadium oxide (V
2O
5), rheium oxide (Re
2O
7) and tin indium oxide (ITO).
Charge generation layer can comprise first material with lowest unoccupied molecular orbital energy level.Hole injection layer comprises second material with highest occupied molecular orbital energy level.Difference between the lowest unoccupied molecular orbital energy level of first material and the highest occupied molecular orbital energy level of second material can be at pact-2eV to the scope of pact+2eV.Forming charge generation layer can comprise making and be heated by resistive gas deposition, electron beam gas deposition, laser beam gas deposition or sputtering sedimentation.The thickness of charge generation layer can be about 10
To about 200
Another execution mode provides organic EL display device with low driving voltage and the method for making this organic EL display device.
Another execution mode provides organic electroluminescent (EL) display device, comprising: first electrode, second electrode, the luminescent layer between first electrode and second electrode, at the hole injection layer between first electrode and the luminescent layer, at hole transmission layer between first electrode and the luminescent layer and the charge generation layer between hole injection layer and hole transmission layer.
An execution mode provides the method for making organic EL display device again, and this organic EL display device has the luminescent layer between first and second electrodes, and this method comprises: form hole injection layer on first electrode; On this hole injection layer, form charge generation layer; And on this charge generation layer, form hole transmission layer.
Description of drawings
By with reference to the accompanying drawings, its exemplary execution mode is described in detail, above-mentioned and further feature of the present invention and advantage will become clearer, wherein:
Fig. 1 is the cross-sectional view of organic EL display device; And
Fig. 2 A to 2C is the cross-sectional view according to the organic EL display device of each execution mode.
Embodiment
Below with reference to the accompanying drawings the present invention is more fully described, wherein showed exemplary execution mode.
Organic electroluminescent (EL) display device according to execution mode comprises first electrode and second electrode.This device also is included in the luminescent layer (EML) between first and second electrodes.This device further is included in hole injection layer (HIL) and the hole transmission layer (HTL) between first electrode and the EML.In addition, this device can be included in the charge generation layer between HIL and the HTL.
The material of charge generation layer can comprise the compound of representing with following formula 1:
Formula 1
In formula 1, R is itrile group (CN), sulfuryl (SO
2R '), sulfoxide group (SOR '), sulfonamide base (SO
2NR '
2), sulfonate group (SO
3R '), nitro (NO
2) or trifluoromethyl (CF
3).And R ' is the C that does not replace or replaced by amine, acid amides, ether or ester
1-C
60Alkyl, aryl or heterocyclic group.
The example of the compound of formula 1 includes, but are not limited to following compounds:
In above-mentioned example, R ' is C unsubstituted or that replaced by amine, acid amides, ether or ester
1-C
60Alkyl, aryl or heterocyclic group.The organic material of being represented by following formula just is used for illustrative purposes, and the present invention is not limited to these formulas.In addition, these materials for example can be available from LG Chemical Ltd..
In addition, charge generation layer can be by being selected from six nitriles, six azepine benzophenanthrenes, tetrafluoro-four cyano-quinone bismethane (F
4-TCNQ), FeCl
3, F
16Compound in CuPc and the metal oxide forms.Metal oxide can be vanadium oxide (V
2O
5), rheium oxide (Re
2O
7) or tin indium oxide (ITO).
The difference that is used for lowest unoccupied molecular orbital (LUMO) energy level of the material of charge generation layer and is used between highest occupied molecular orbital (HOMO) energy level of the material of HIL can be at pact-2eV to the scope of pact+2eV.For example, the HOMO energy level of six azepine benzophenanthrenes or six nitriles, six azepine benzophenanthrenes be about 9.6 to 9.7eV and lumo energy be about 5.5eV.Tetrafluoro-four cyano-quinone bismethane (F
4-TCNQ) HOMO energy level is about 8.53eV, and tetrafluoro-four cyano-quinone bismethane (F
4-TCNQ) lumo energy is about 6.23eV.The average HOMO energy level of material that is used for the HIL of organic EL device is about 4.5 to about 5.5eV.Therefore, when six azepine benzophenanthrenes or six nitriles, six azepine benzophenanthrenes were used for charge generation layer, the difference between the HOMO energy level of the lumo energy of charge generation layer and HIL can be at about 0eV to the scope of about 1.0eV.In another embodiment, when with tetrafluoro-four cyano-quinone bismethane (F
4-when TCNQ) being used for charge generation layer, the difference between the HOMO energy level of the lumo energy of charge generation layer and HIL can be about 0.73 to about 1.73eV scope.Can reduce driving voltage by between HIL and HTL, forming charge generation layer.
Charge generation layer can adopt any suitable method to form.The example of such method includes, but are not limited to: resistance heating gas deposition, electron beam gas deposition, laser beam gas deposition and sputtering sedimentation.(wherein R ' is the C that does not replace or replaced by amine, acid amides, ether or ester by the compound of formula 1 expression when charge generation layer
1-C
60When alkyl group) forming, replacement such as for example ink jet printing of method that charge generation layer can be by adopting solution, spin coating, scraping blade method, rolling method deposit and form.Charge generation layer can form as the common layer that is used for all pixels.The thickness of charge generation layer can be about 10
To about 200
, preferably about 20
To about 80
When the thickness of charge generation layer less than 10
The time, charge generation is low, and when the thickness of charge generation layer greater than 200
The time, the driving voltage height, and the possibility of being crosstalked by the leakage current generation increases.
This OLED display device may further include at least a in hole blocking layer (HBL), electron transfer layer (ETL) and the electron injecting layer (EIL) between the EML and second electrode.
Be included on first electrode according to the manufacture method comprising the organic EL display device of EML between first and second electrodes of execution mode and form HIL, on HIL, form charge generation layer, and on charge generation layer, form HTL.Will be with reference to the manufacture method of figure 2A to 2C detailed description according to the organic EL display device of execution mode.
At first, can on substrate, form anode (first electrode).Substrate can be any substrate that is suitable for organic EL display device.Substrate can be formed by glass or plastic material.Plastic material can have excellent transparency and surface smoothness.Waterproof can easily be processed and can be to plastic material.Anode can be by the metal (〉=about 4.5eV) of high work content as tin indium oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO
2), zinc oxide (ZnO), or any suitable transparent material with high conductivity forms.
Subsequently, can adopt the high vacuum thermal vapor deposition on anode, to form HIL.Depend on to be used for forming the HIL type of material, can also use the solution that contains this material to form this HIL by spin coating, dip-coating, scraping blade method, ink jet printing, heat transfer, organic gas deposition methods such as (OVPD).
Can wait by a kind of for example vacuum heat deposition, the spin coating in the said method and form HIL.The thickness of HIL can be about 100
To about 2500
When the thickness of HIL less than 100
The time, the ability of injected hole is low; When the thickness of HIL greater than 2500
The time, the driving voltage height.At an execution mode of the device that is used for top emission structure, the thickness of HIL can be about 1000
To about 2500
Those of skill in the art will understand, and depend on that this device sends the color of light, and thickness can change.
The examples of material that is used for forming HIL includes, but not limited to copper phthalocyanine (CuPc) or star burst (starbust) type amine, for example TCTA, m-MTDATA or IDE406 (derive from Idemitsu Kosan Co., Ltd., Tokyo, Japan).It below is the formula of CuPc, TCTA and m-MTDATA.
Can on HIL, form charge generation layer.Be used for the examples of material of charge generation layer, include but not limited to, the compound of representing with following formula 1:
Formula 1
In formula 1, R is itrile group (CN), sulfuryl (SO
2R '), sulfoxide group (SOR '), sulfonamide base (SO
2NR '
2), sulfonate group (SO
3R '), nitro (NO
2) or trifluoromethyl (CF
3).And R ' is C unsubstituted or that replaced by amine, acid amides, ether or ester
1-C
60Alkyl, aryl or heterocyclic group.
Charge generating material can be six nitriles, six azepine benzophenanthrenes, tetrafluoro-four cyano-quinone bismethane (F
4-TCNQ), FeCl
3, F
16CuPc or metal oxide.Metal oxide can be vanadium oxide (V
2O
5), rheium oxide (Re
2O
7) or tin indium oxide (ITO).
Charge generation layer can adopt resistance heating gas deposition, electron beam gas deposition, laser beam gas deposition or sputter at HIL goes up formation.Charge generation layer can form as the common layer that is used for all pixels.The thickness of charge generation layer can be about 10
To about 200
, preferably about 20
To about 80
When the thickness of charge generation layer less than 10
The time, charge generation is low; When the thickness of charge generation layer greater than 200
The time, the driving voltage height, and because leakage current produces the possibility increase of crosstalking.
HTL can adopt the whole bag of tricks such as vacuum heat deposition or be spin-coated on the charge generation layer and form.The material that is used for forming HTL is unrestricted.This examples of material comprises N, N '-two (3-aminomethyl phenyl)-N, N '-diphenyl-[1,1-biphenyl]-4,4 '-diamines (TPD), N, N '-two (1-naphthyl)-N, N '-diphenylbenzidine (α-NPD) (derive from Idemitsu Kosan Co., Ltd.) with IDE 320.The thickness of HTL can be about 50
To about 1500
The chemical formula of TPD and α-NPD is as follows.When the thickness of HTL less than 50
The time, cavity transmission ability is low; And when the thickness of HTL greater than 1500
The time, the driving voltage height.
Can on HTL, form EML.The method that forms this EML is unrestricted.Can make in all sorts of ways for example vacuum moulding machine, ink jet printing, laser printing, photoetching process and OVPD.The thickness of EML can be about 100
To about 800
When the thickness of EML less than 100
The time, the efficient and the life-span of organic EL display device are low, and when the thickness of EML greater than 800
The time, the driving voltage height.Can for example vacuum moulding machine, spin coating etc. optionally form hole blocking layer (HBL) on EML by one of said method.The material that is used for forming HBL without limits.This material can transmission electronic, and has the ionization potential higher than luminophor.The example that is used for the material of HBL comprises Balq, BCP and TPBI.The thickness of HBL can be about 30
To about 500
The chemical formula of Balq, BCP and TPBI is as follows.When the thickness of HBL less than 30
The time, because the hole barrier ability, efficient reduces; And when the thickness of HBL greater than 500
The time, the driving voltage height.
Can adopt vacuum moulding machine or be spin-coated on HBL and go up formation electron transfer layer (ETL).The material that is used for forming ETL and can be Alq3 without limits.The thickness of ETL can be about 50
To about 600
When thickness less than 50
The time, the life-span of organic EL display device is short; And work as thickness greater than 600
The time, the driving voltage height.
Can on ETL, optionally form EIL.The material that is used for forming EIL can be LiF, NaCl, CsF, Li
2O, BaO or Liq.The thickness of EIL can be about 1
To about 100
Be the chemical formula of Liq below.When the thickness of EIL less than 1
The time, EIL can not suitably carry out its function, and when the thickness of EIL greater than 100
The time, because EIL plays the effect of insulating barrier, driving voltage height.
Adopt a kind of in vacuum heat deposition, sputter, the metal-organic chemical gas deposition etc., can on EIL, form negative electrode (second electrode), thereby finish this organic EL display device.The metal that is used for negative electrode can be Li, Mg, Al, Al-Li, Ca, Mg-In or Mg-Ag.
The organic EL display device of an execution mode may further include one or two intermediate layer between in anode, HIL, charge generation layer, HTL, EML, ETL, EIL and negative electrode two.In addition, in this organic EL display device, may further include HBL and electronic barrier layer (EBL).
Below, will be explained in more detail the present invention with reference to following embodiment.The following examples are to be used for exemplary purpose, and therefore are not used for limiting the scope of the invention.
Embodiment 1
With Corning Inc. (Corning, NY) 15 Ω of Zhi Zaoing/cm
2(1200
) the ito glass substrate is cut into the sheet of 50mm * 50mm * 0.7mm size, and each sheet was cleaned 5 minutes at isopropyl alcohol and deionized water for ultrasonic ripple, the UV/ ozone clean is 30 minutes then, to form anode.
Vacuum moulding machine m-MTDATA on this substrate is 500 to form thickness
HIL.Resistance heating deposition six nitriles six azepine benzophenanthrenes are 20 to form thickness on HIL
Charge generation layer.Vacuum moulding machine N on this charge generation layer, N '-two (1-naphthyl)-N, (α-NPD) is 200 to form thickness to N '-diphenylbenzidine
Hole transmission layer.
Adopting the vacuum moulding machine of organic gas deposition (OVPD), is about 300 to form thickness
EML.To be deposited on as the Alq3 of electric transmission layer material on the EML, be about 300 to form thickness
ETL.On electron transfer layer, is 10 with the thickness that is formed on the ETL with the LiF vacuum moulding machine
EIL, and with the vacuum moulding machine of Mg-Ag alloy on EIL, be 200 to form thickness
Negative electrode, thereby finish this organic EL display device.
Embodiment 2
Make this organic EL display device with the method identical, except the thickness of charge generation layer is 50 with embodiment 1
Outside.
Embodiment 3
Make this OLED display device with the method identical, except the thickness of charge generation layer is 80 with embodiment 1
Outside.
Comparative example 1
15 Ω/cm with Corning Inc. manufacturing
2(1200
) the ito glass substrate is cut into the sheet of 50mm * 50mm * 0.7mm size, and each sheet was cleaned 5 minutes at isopropyl alcohol and deionized water for ultrasonic ripple, the UV/ ozone clean is 30 minutes then, to form anode.
Vacuum moulding machine m-MTDATA on this substrate is 1300 to form thickness
HIL.Vacuum moulding machine N on HIL, N '-two (1-naphthyl)-N, (α-NPD) is 200 to form thickness to N '-diphenylbenzidine
HTL.
Adopting the vacuum moulding machine of OVPD, is about 300 to form thickness
EML.To be deposited on as the Alq3 of electric transmission layer material on the EML, be about 300 to form thickness
ETL.On ETL, is 10 to form thickness with the LiF vacuum moulding machine
EIL, and with the vacuum moulding machine of Mg-Ag alloy on EIL, be 200 to form thickness
Negative electrode, thereby finish this organic EL display device.
Measurement is according to driving voltage, efficient and the life-span of the organic EL display device of embodiment 1-3 and comparative example 1 manufacturing.The result is as shown in table 1.
Table 1
| Driving voltage (V) | Efficient (cd/V) | Life-span (hour) | |
| Embodiment 1 | 5.50 | 3.16 | 1,500 |
| Embodiment 2 | 5.31 | 3.57 | 1,500 |
| Embodiment 3 | 5.22 | 4.16 | 1,500 |
| Comparative example 1 | 6.08 | 3.04 | 1,000 |
The driving voltage of the organic EL device that is obtained by embodiment 1-3 is in 5.50 to 5.22V scopes, and the driving voltage of the El element that is obtained by comparative example 1 is 6.08V.
The organic EL device that is obtained by embodiment 1-3 is 400cd/m in brightness
2The time efficient in 3.16 to 4.16cd/A scopes, and be 400cd/m in brightness by the El element that comparative example 1 obtains
2The time efficient be 3.04cd/A.
Life-span represents that brightness is reduced to the 50% o'clock spent time of original intensity.The life-span of the organic EL display device that is obtained by embodiment 1-3 is 5,000cd/m
2Shi Weiyue 1,500 hour, and the life-span of the organic EL display device that obtains by comparative example 15,000cd/m
2Shi Weiyue 1,000 hour.Therefore, the life-span of the organic EL display device that is obtained by embodiment 1 is 1.5 times of life-span of the OLED display device that obtained by comparative example 1.
The organic EL display device of each execution mode has charge generation layer between HIL and HTL, so the driving voltage of this EL display device is low, and the efficient height of this EL display device, and the life-span of this EL display device is long.
Although the present invention has been carried out showing particularly and describing with reference to each illustrative embodiments, but will be understood by those skilled in the art that, under the situation of the spirit and scope of the present invention that do not break away from the claims qualification, can make the change on various forms and the details here.
Claims (24)
1. an organic electroluminescent (EL) display device comprises:
First electrode;
Second electrode;
Luminescent layer is inserted between described first electrode and described second electrode;
Hole injection layer is inserted between described first electrode and the described luminescent layer;
Hole transmission layer is inserted between described hole injection layer and the described luminescent layer; And
Charge generation layer is inserted between described hole injection layer and the described hole transmission layer,
Wherein said charge generation layer is formed directly on the described hole injection layer, and described hole transmission layer is formed directly on the described charge generation layer.
2. organic elctroluminescent device as claimed in claim 1, wherein said charge generation layer is formed by the compound shown in the following formula 1:
Formula 1
Wherein, R is selected from itrile group (CN), sulfuryl (SO
2R '), sulfoxide group (SOR '), sulfonamide base (SO
2NR '
2), sulfonate group (SO
3R '), nitro (NO
2) and trifluoromethyl (CF
3); And
Wherein R ' is selected from C unsubstituted or that replaced by amine, acid amides, ether or ester
1-C
60Alkyl, aryl and heterocyclic group.
3. organic elctroluminescent device as claimed in claim 1, wherein said charge generation layer is by being selected from six nitriles, six azepine benzophenanthrenes, tetrafluoro-four cyano-quinone bismethane (F
4-TCNQ), FeCl
3, F
16Compound in CuPc and the metal oxide forms.
4. organic elctroluminescent device as claimed in claim 3, wherein said metal oxide is selected from vanadium oxide (V
2O
5), rheium oxide (Re
2O
7) and tin indium oxide (ITO).
5. organic elctroluminescent device as claimed in claim 1, wherein said charge generation layer comprises first material with lowest unoccupied molecular orbital energy level, wherein said hole injection layer comprises second material with highest occupied molecular orbital energy level, and the difference between the highest occupied molecular orbital energy level of the lowest unoccupied molecular orbital energy level of wherein said first material and described second material at pact-2eV to the pact+2eV scope.
6. organic elctroluminescent device as claimed in claim 1, wherein said device comprises a plurality of pixels, and described charge generation layer is formed at least two common layer in these a plurality of pixels.
7. organic elctroluminescent device as claimed in claim 1, the thickness of wherein said charge generation layer are about 10
To about 200
8. organic elctroluminescent device as claimed in claim 7, the thickness of wherein said charge generation layer are about 20
To about 80
9. organic elctroluminescent device as claimed in claim 1 further comprises the one deck at least that is selected from hole blocking layer, electron transfer layer and the electron injecting layer that is inserted between described luminescent layer and described second electrode.
10. organic elctroluminescent device as claimed in claim 1 further comprises the electron transfer layer that is inserted between described second electrode and the described luminescent layer.
11. organic elctroluminescent device as claimed in claim 10 further comprises substrate, wherein forms described first electrode on described substrate.
12. organic elctroluminescent device as claimed in claim 11 further comprises the electron injecting layer that is inserted between described electron transfer layer and described second electrode.
13. organic elctroluminescent device as claimed in claim 12 further comprises the hole blocking layer that is inserted between described electron transfer layer and the described luminescent layer.
14. comprise the electronic device of organic elctroluminescent device as claimed in claim 1.
15. the manufacture method of an organic elctroluminescent device.This method comprises:
On first electrode, form hole injection layer;
On described hole injection layer, directly form charge generation layer; And
On described charge generation layer, directly form hole transmission layer.
16. method as claimed in claim 15 further comprises:
On described hole transmission layer, form luminescent layer; And
On described luminescent layer, form second electrode.
17. method as claimed in claim 16 further is included in and forms after the described luminescent layer and before forming described second electrode, forms at least a in hole blocking layer, electron transfer layer and the electron injecting layer.
18. method as claimed in claim 15, wherein said charge generation layer is formed by the compound shown in the following formula 1:
Formula 1
Wherein, R is selected from itrile group (CN), sulfuryl (SO
2R '), sulfoxide group (SOR '), sulfonamide base (SO
2NR '
2), sulfonate group (SO
3R '), nitro (NO
2) and trifluoromethyl (CF
3), and
Wherein R ' is selected from C unsubstituted or that replaced by amine, acid amides, ether or ester
1-C
60Alkyl, aryl and heterocyclic group.
19. method as claimed in claim 15, wherein said charge generation layer is by being selected from six nitriles, six azepine benzophenanthrenes, tetrafluoro-four cyano-quinone bismethane (F
4-TCNQ), FeCl
3, F
16Compound in CuPc and the metal oxide forms.
20. method as claimed in claim 19, wherein said metal oxide is selected from vanadium oxide (V
2O
5), rheium oxide (Re
2O
7) and tin indium oxide (ITO).
21. method as claimed in claim 15, wherein said charge generation layer comprises first material with lowest unoccupied molecular orbital energy level, wherein said hole injection layer comprises second material with highest occupied molecular orbital energy level, and the difference between the highest occupied molecular orbital energy level of the lowest unoccupied molecular orbital energy level of wherein said first material and described second material at pact-2eV to the scope of pact+2eV.
22. method as claimed in claim 15 wherein forms described charge generation layer and comprises making and be heated by resistive gas deposition, electron beam gas deposition, laser beam gas deposition or sputtering sedimentation.
23. method as claimed in claim 15, the thickness of wherein said charge generation layer are about 10
To about 200
24. method as claimed in claim 23, the thickness of wherein said charge generation layer are about 10
To about 80
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| KR126102/05 | 2005-12-20 | ||
| KR1020050126102A KR100730190B1 (en) | 2005-12-20 | 2005-12-20 | Organic luminescence display device and method for preparing the same |
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| CN101005116A CN101005116A (en) | 2007-07-25 |
| CN101005116B true CN101005116B (en) | 2010-05-19 |
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|---|---|
| US (1) | US20070141395A1 (en) |
| EP (1) | EP1801899B1 (en) |
| JP (1) | JP4790565B2 (en) |
| KR (1) | KR100730190B1 (en) |
| CN (1) | CN101005116B (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN101005116A (en) | 2007-07-25 |
| KR100730190B1 (en) | 2007-06-19 |
| US20070141395A1 (en) | 2007-06-21 |
| JP2007173779A (en) | 2007-07-05 |
| JP4790565B2 (en) | 2011-10-12 |
| EP1801899B1 (en) | 2012-12-05 |
| EP1801899A3 (en) | 2011-06-01 |
| EP1801899A2 (en) | 2007-06-27 |
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