CN100593455C - Hydration polisher - Google Patents
Hydration polisher Download PDFInfo
- Publication number
- CN100593455C CN100593455C CN200810063463A CN200810063463A CN100593455C CN 100593455 C CN100593455 C CN 100593455C CN 200810063463 A CN200810063463 A CN 200810063463A CN 200810063463 A CN200810063463 A CN 200810063463A CN 100593455 C CN100593455 C CN 100593455C
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- China
- Prior art keywords
- main shaft
- hydration
- polisher
- polishing
- basal disc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000036571 hydration Effects 0.000 title claims abstract description 23
- 238000006703 hydration reaction Methods 0.000 title claims abstract description 23
- 238000005498 polishing Methods 0.000 claims abstract description 90
- 230000005540 biological transmission Effects 0.000 claims abstract description 14
- 230000007704 transition Effects 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- 239000007864 aqueous solution Substances 0.000 claims description 7
- 239000010425 asbestos Substances 0.000 claims description 7
- 239000012530 fluid Substances 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 7
- 229910052895 riebeckite Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 15
- 230000008569 process Effects 0.000 abstract description 9
- 229910052594 sapphire Inorganic materials 0.000 description 24
- 239000010980 sapphire Substances 0.000 description 24
- 239000000126 substance Substances 0.000 description 15
- 238000003754 machining Methods 0.000 description 9
- 239000003082 abrasive agent Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000017105 transposition Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a hydration polishing machine, comprising a frame, a main shaft motor, a main shaft, a polishing disk, a vacuum chuck and a sucker motor. The main shaft motor is connected withthe main shaft in a transmission way. The main shaft is arranged inside the frame. The upper end of the main shaft is connected with the polishing disk in a transmission way. The vacuum chuck is located on the upper part of the polishing disk. The vacuum chuck is connected with the sucker motor in a transmission way. The hydration polishing machine also comprises a steam generator, a steam delivery pipe and a basal disk. The outlet of the steam generator is connected with the steam delivery pipe. The inside of the main shaft is provided with a through hole. The steam delivery pipe runs throughthe through holes from bottom to top. The upper end of the main shaft is fixedly connected with the center of the basal disk. The upper part of the basal disk is fixedly connected with the polishingdisk. A transition hollow cavity is arranged between the basal disk and the polishing disk. The steam delivery pipe passes through the basal disk and is communicated with the transition hollow cavity.The bottom of the transition hollow cavity is provided with a drain pipe. The polishing disk is provided with a through hole. When the hydration polishing machine is used for processing the sapphirecrystal, the process quality is excellent, the process precision and the process efficiency are high.
Description
Technical field
The present invention relates to the polishing machine field, especially a kind of polishing machine that is used for the polishing of high-brightness LED sapphire crystal.
Background technology
Polishing processing is the important method that obtains high-quality sapphire crystal surface, and the semiconductor material system requirement of making high-brightness LED is more stricter than traditional LED.In heterojunction structure, the small internal stress that sapphire wafer produces because of grinding, polishing etc. will change the lattice paprmeter of AlN, AlGaN, GaN film, cause the generation of membrane stress, when film had been accumulated too much stress, its surface can produce many small embossments, crackle and space; In addition, the cut of substrate surface equally also can be sent out and reflect epi-layer surface, and the excellent surface roughness is the necessary condition of low dislocation 106-1010cm-3GaN film growth; Sapphire wafer lattice surface integrality directly influences coating film thickness uniformity and light transmission, and the luminous efficiency of these factors and high-brightness LED is closely related with stability.The Sapphire Substrate that present domestic high-brightness LED adopted is all from imports such as Japan, Russia, the U.S., domesticly do not see the autonomous process technology that the high-brightness LED Sapphire Substrate is arranged as yet.International community holds in close confidence and implements to block to the process technology of high-brightness LED sapphire wafer, and key equipment is carried out and prohibited pin, so the research of this aspect is that China implements one of important difficult problem of demanding urgently capturing in the semiconductor lighting engineering upstream industry.
Sapphire is a kind of suitable difficult to machine material, and fusing point is high 2040 ℃, the high 9Mohs of hardness, and main processing method has machine glazed finish, chemical polishing, chemically mechanical polishing, the cold polishing of laser, chemical mechanical polishing dry type, wet type at present.
1, abrasive materials such as diamond, boron carbide, carborundum are adopted in machine glazed finish, and Material Removal Mechanism is mainly abrasive wear, though can obtain good surface roughness, produce minute scratch marks and cause the subsurface damage at surface of the work easily.
2, chemical polishing is with suitable medium such as KOH, H
3PO
4, H
2SO
4, Cl
2/ BCl
3, Boratex glass metal (Na
2O-B
2O
3) wait at high temperature to corrode and realize the effect of polishing, the breakable layer degree of depth that chemical polishing produces is more shallow, but causes polishing the mist spot easily, and the polishing of ultra-smooth substrates removes stress before generally only being used to grow.
3, Al is generally adopted in chemically mechanical polishing
2O
3, diadust is abrasive material, highly basic is polishing fluid, in the polishing process, the chemical liquids of highly basic makes sapphire wafer surface atom bond close weakened with chemical reaction and forms one deck passivation layer, by the mode of the mandatory mechanical force of abrasive material passivation layer is removed again.Fig. 3 uses highly basic pH10 lapping liquid, the resulting finished surface of 1 μ m diadust in the CMP process, the chemically mechanical polishing biggest advantage can make Sapphire Substrate realize leveling exactly, but still there is trickle cut in the sapphire surface after the processing.
4, the cold polished surface quality of laser is higher, is difficult for cracking, be with a wide range of applications, but laser apparatus is expensive, and polishing cost height, the system research of cold polishing mechanism also lacks very much.
5, dry type and wet type chemical mechanical polishing Mechanical Chemical Polishing, MCP are the main means of present sapphire wafer polishing processing.Do, the wet type chemical mechanical polishing is with Soft particles SiO
2Be abrasive particle, utilize solid state reaction, greatly improve the subsurface damage that chemically mechanical polishing causes the sapphire wafer surface as the material removing method.Though sapphire wafer does not have tangible abrasive particle to scratch SiO
2Abrasive material Morse hardness causes the transposition defective of polished surface fairly obvious still up to 7, and required equipment cost of MCP and specification requirement are very high in addition.Along with the arriving of nanometer era, exploitation meets cost and can reach the green polishing technology of Subnano-class is trend of the times.
The mechanical polishing method of sapphire wafer has higher processing precision and working (machining) efficiency, but surface quality can not reach requirement fully, and chemical polishing can obtain not having the smooth surface of affected layer, but has some problems on machining accuracy and working (machining) efficiency.
Conventional polisher is divided into single side polishing machine and Twp-sided polishing machine, they all belong to open (need not the seal) processing under the normal temperature and pressure in process, the polishing fluid that contains abrasive material in process constantly injects card above polishing disk, in fact be exactly the cutting between workpiece, abrasive material and the polishing disk three.Because can being divided into again, the different single side polishing machines of the motion mode of rubbing head decide centering type, indefinite centering type and swing type; Twp-sided polishing machine has last polishing disk and two cards of following polishing disk, respectively the workpiece top and bottom is polished, and workpiece is driven by planetary gear.The described several methods to the polishing of difficult-to-machine materials such as sapphire of preamble are processed with these two kinds of polishing machines mostly.
Summary of the invention
Can not take into account the deficiency of crudy and machining accuracy, working (machining) efficiency in order to overcome existing various polishing machine during sapphire crystal in processing, the invention provides and a kind ofly both had good crudy during sapphire crystal, have high machining accuracy, the hydration polisher of working (machining) efficiency again in processing.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of hydration polisher, comprise support, spindle motor, main shaft, polishing disk, vacuum cup and sucker motor, described spindle motor is connected with spindle drive, described main shaft is installed in the support, the upper end and the polishing disk of described main shaft are in transmission connection, described vacuum cup is positioned at the top of described polishing disk, described vacuum cup and sucker motor are in transmission connection, described hydration polisher also comprises steam generator, steam transmitting pipe and basal disc, the outlet of described steam generator connects described steam transmitting pipe, described main shaft inside is provided with through hole, described steam transmitting pipe runs through described through hole from bottom to top, the upper end of described main shaft and the center of described basal disc are affixed, described basal disc top and polishing disk are affixed, are provided with transition cavity between described basal disc and polishing disk, and described appendix passes described basal disc and is communicated with described transition cavity, the bottom of described transition cavity is provided with drainpipe, and described polishing disk has through hole.
As preferred a kind of scheme: on described basal disc, install and be used for temperature control system that steam is heated.
Further, the bottom of described basal disc is skewed, and described drainpipe is installed in the lowest part of described basal disc.
Further, be provided with the insulation asbestos shingle in described through hole, described insulation asbestos shingle is coated on outside the described steam transmitting pipe.
The pump that described steam generator comprises aqueous solution fluid reservoir, water vapor generation device and is used for steam is exported, delivery side of pump is communicated with described steam transmitting pipe.
The output shaft of described spindle motor is provided with first belt wheel, and described first belt pulley is in transmission connection by the belt and second belt pulley, and described second belt pulley is installed in the bottom of main shaft.
Described hydration polisher also comprises cover, described cover and support fixed seal connection.
Technical conceive of the present invention is: the advantage of comprehensive utilization mechanical polishing method and chemically polishing method, the form accuracy that keeps machine glazed finish, try to achieve the not damaged machined surface of chemical polishing, based on this thought, provide the hydration polisher that has micro-processing characteristics under a kind of mixing gas chemical liquids assisted with high-temperature water vapour state that can realize the high-brightness LED sapphire wafer.
The output of steam generator provides chemical assisted with high-temperature water vapour by steam transmitting pipe to polishing disk, the polishing disk body has a lot of through holes, high-temperature water vapor can be overflowed from through hole with workpiece to be contacted, thereby raising processing effect, temperature control system heats water vapour, is condensed into water to avoid water vapour.
Beneficial effect of the present invention mainly shows: 1, can make sapphire obtain good surface roughness, sapphire surface can not produce minute scratch marks or cause the subsurface damage, can obtain sapphire leveling; 2, the machinery equipment cost is low, and processing conditions is simple, can obtain higher processing precision and working (machining) efficiency, is with a wide range of applications; 3, compare with other polissoirs, polishing machine of the present invention can not produce very big noise when working, and polishing process is nontoxic, harmless, and no dust produces, and can reach the polishing of Subnano-class green non-pollution, and polishing condition is stable, not residual polishing lines on the burnishing surface; 4, chemical liquids assisted with high-temperature water vapour is by steam generation vapour output, realize water vapour automatically, supply with equably; 5, when motor drove main shaft and polishing disk rotation by belt pulley and belt, steam transmitting pipe can directly pass through the centre bore of main shaft to polishing disk transporting water steam; 6, the basal disc bottom is made as 1: 100 the gradient, and is provided with a draining valve at the edge, and the water vapour of condensation is discharged from the edge of dish; 7, on the steam transmitting pipe fixed support is arranged, fixed support can support steam transmitting pipe and it is positioned.
Description of drawings
Fig. 1 is the structural representation of hydration polisher.
The specific embodiment
Below in conjunction with accompanying drawing the present invention is further described.
With reference to Fig. 1, a kind of hydration polisher, comprise support 3, spindle motor 14, main shaft 12, polishing disk 7, vacuum cup 8 and sucker motor 9, described spindle motor 14 is in transmission connection with main shaft 12, described main shaft 12 is installed in the support 3, the upper end of described main shaft 12 and polishing disk 7 are in transmission connection, described vacuum cup 8 is positioned at the top of described polishing disk 7, described vacuum cup 8 is in transmission connection with sucker motor 9, described hydration polisher also comprises steam generator 1, steam transmitting pipe 2 and basal disc 11, the outlet of described steam generator 1 connects described steam transmitting pipe 2, described main shaft 12 inside are provided with through hole, described steam transmitting pipe 2 runs through described through hole from bottom to top, and the center of the upper end of described main shaft 12 and described basal disc 11 is affixed, and described basal disc 11 tops and polishing disk 7 are affixed, between described basal disc 11 and polishing disk 7, be provided with transition cavity, described steam transmitting pipe 2 passes described basal disc 11 and is communicated with described transition cavity, and the bottom of described transition cavity is provided with drainpipe 5, and described polishing disk 7 has through hole.
On described basal disc 11, install and be used for temperature control system that steam is heated.The bottom of described basal disc 11 is skewed, and described drainpipe 5 is installed in the lowest part of described basal disc.Be provided with insulation asbestos shingle 4 in described through hole, described insulation asbestos shingle 4 is coated on outside the described steam transmitting pipe.
The pump that described steam generator 1 comprises aqueous solution fluid reservoir, water vapor generation device and is used for steam is exported, delivery side of pump is communicated with described steam transmitting pipe.The output shaft of described spindle motor 14 is provided with first belt pulley, and described first belt pulley is in transmission connection by the belt 15 and second belt pulley, and described second belt pulley is installed in the bottom of main shaft 12.Described hydration polisher also comprises cover 10, described cover 10 and support 1 fixed seal connection.
In the present embodiment, the direction of arrow is the flow direction of water vapour among Fig. 1.Described steam generator 1 comprises and is used to store aqueous solution fluid reservoir and is used for that the aqueous solution in the fluid reservoir is heated to be the steam generator of water vapour and is used for water vapour is exported to the pump of polishing disk that delivery side of pump is communicated with steam transmitting pipe 2.Described steam transmitting pipe 2 is fixed on the support by A-frame, and by the main shaft interior bone to the polishing disk delivering vapor, steam transmitting pipe coated outside one deck insulation asbestos shingle 4 is used for being incubated to chemical liquids assisted with high-temperature water vapour.Described spindle motor 14 drives main shaft by belt pulley and belt; Centre bore runs through main shaft, and centre bore inside is equipped with steam transmitting pipe and is communicated with basal disc, and basal disc is replaceable.Described basal disc 11 bottom slight inclination, the gradient is 1: 100, the basal disc inner hollow, inside is provided with temperature control system 6 and in process water vapour is heated.Described main shaft 12 is riveted together with basal disc 11, and main shaft inside has through hole, and steam transmitting pipe runs through main shaft inside and is communicated with basal disc.Described polishing disk 7 is fixed on the basal disc by screw, and basal disc and main shaft are consolidated, and polishing disk is driven by spindle motor; The polishing disk body has a lot of through holes, in polishing process, steam can be overflowed from through hole, contacts with workpiece.Described rubbing head is that vacuum cup 8 is used for fixing workpiece, by the mode that vacuumizes workpiece is adsorbed on the sucker, and along with the drive of sucker motor 9, can regulates the rotating speed of workpiece; There is sealing ring sucker motor shaft and cover junction.Described cover 10 is fixed by mechanical connection and support, and the junction has sealing ring that the processing district is completely cut off with outside.
The concrete course of work of present embodiment is: the mixed aqueous solution in the steam generator 1 passes through pump under the effect of generator, flow in the cavity of 7 of basal disc 11 and polishing disks through steam transmitting pipe 2, polishing disk 7 entire bodies have a lot of through holes, water vapour is overflowed from cavity, arrive machining area and contact with workpiece; This moment, cover 10 sealed with support 3, when high-temperature water vapor cover 3 inside that feed reach 2 atmospheric pressure, started spindle motor 14 and sucker motor 9, drove polishing disk 7 and vacuum cup 8 rotations, realized polishing processing.
In the present embodiment, polishing disk thickness is 20mm, and diameter is 300-380mm, for realizing uniform polish, the adjustable 20rpm-120rpm of the rotating speed of polishing disk, polishing disk material, hardness, hear resistance and polishing disk body number of aperture amount and through hole are all determined by processing at the arrangement of card; Basal disc can be made with ceramic material, and makes interchangeable.Temperature control system can be realized with the mode of heating using microwave.
The pressure and temperature of the composition of mixed aqueous solution, viscosity, pH value and chemical stability and water vapour all is at the sapphire crystal of different size and fixed in the steam generator.
Present embodiment can be applicable to the no abrasive particle polishing on the smooth not damaged of sapphire crystal Subnano-class surface.
Claims (7)
1, a kind of hydration polisher, comprise support, spindle motor, main shaft, polishing disk, vacuum cup and sucker motor, described spindle motor is connected with spindle drive, described main shaft is installed in the support, the upper end and the polishing disk of described main shaft are in transmission connection, described vacuum cup is positioned at the top of described polishing disk, described vacuum cup and sucker motor are in transmission connection, it is characterized in that: described hydration polisher also comprises steam generator, steam transmitting pipe and basal disc, the outlet of described steam generator connects described steam transmitting pipe, described main shaft inside is provided with through hole, described steam transmitting pipe runs through described through hole from bottom to top, the upper end of described main shaft and the center of described basal disc are affixed, described basal disc top and polishing disk are affixed, are provided with transition cavity between described basal disc and polishing disk, and described appendix passes described basal disc and is communicated with described transition cavity, the bottom of described transition cavity is provided with drainpipe, and described polishing disk has through hole.
2, hydration polisher as claimed in claim 1 is characterized in that: install on described basal disc and be used for temperature control system that steam is heated.
3, hydration polisher as claimed in claim 1 or 2 is characterized in that: the bottom of described basal disc is skewed, and described drainpipe is installed in the lowest part of described basal disc.
4, hydration polisher as claimed in claim 3 is characterized in that: be provided with the insulation asbestos shingle in the through hole of described main shaft inside, described insulation asbestos shingle is coated on outside the described steam transmitting pipe.
5, hydration polisher as claimed in claim 4 is characterized in that: the pump that described steam generator comprises aqueous solution fluid reservoir, water vapor generation device and is used for steam is exported, delivery side of pump is communicated with described steam transmitting pipe.
6, hydration polisher as claimed in claim 4 is characterized in that: the output shaft of described spindle motor is provided with first belt pulley, and described first belt pulley is in transmission connection by the belt and second belt pulley, and described second belt pulley is installed in the bottom of main shaft.
7, hydration polisher as claimed in claim 4 is characterized in that: described hydration polisher also comprises cover, described cover and support fixed seal connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810063463A CN100593455C (en) | 2008-08-07 | 2008-08-07 | Hydration polisher |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810063463A CN100593455C (en) | 2008-08-07 | 2008-08-07 | Hydration polisher |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101342671A CN101342671A (en) | 2009-01-14 |
| CN100593455C true CN100593455C (en) | 2010-03-10 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810063463A Expired - Fee Related CN100593455C (en) | 2008-08-07 | 2008-08-07 | Hydration polisher |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102218696B (en) * | 2011-06-13 | 2013-01-09 | 中山市呔铃王汽车服务有限公司 | Automobile steel ring polishing machine |
| CN102672593B (en) * | 2012-06-04 | 2015-12-09 | 上海卡贝尼精密陶瓷有限公司 | A kind of ultraprecise composite polishing method |
| CN108326747A (en) * | 2017-03-14 | 2018-07-27 | 黄河科技学院 | A kind of ball grinding device |
| CN110253147A (en) * | 2019-06-19 | 2019-09-20 | 浙江工业大学 | A kind of laser assisted hydration processing polished method |
| CN111515840B (en) * | 2020-05-29 | 2021-02-09 | 湖南亚泰陶瓷有限公司 | Based on energy-concerving and environment-protective pottery polishing equipment |
| KR20230027248A (en) * | 2021-05-04 | 2023-02-27 | 어플라이드 머티어리얼스, 인코포레이티드 | Hot water generation for chemical mechanical polishing |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000108033A (en) * | 1998-10-07 | 2000-04-18 | Nikon Corp | Polishing machine |
| CN1469794A (en) * | 2000-11-07 | 2004-01-21 | ����˹ҽ������˾ | Methods, apparatus and slurries for chemical mechanical planarization |
| US20040023606A1 (en) * | 2002-01-17 | 2004-02-05 | Yuchun Wang | Advanced chemical mechanical polishing system with smart endpoint detection |
-
2008
- 2008-08-07 CN CN200810063463A patent/CN100593455C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000108033A (en) * | 1998-10-07 | 2000-04-18 | Nikon Corp | Polishing machine |
| CN1469794A (en) * | 2000-11-07 | 2004-01-21 | ����˹ҽ������˾ | Methods, apparatus and slurries for chemical mechanical planarization |
| US20040023606A1 (en) * | 2002-01-17 | 2004-02-05 | Yuchun Wang | Advanced chemical mechanical polishing system with smart endpoint detection |
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| CN101342671A (en) | 2009-01-14 |
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