CN100590969C - Device including piezoelectric thin film and method for producing the same - Google Patents
Device including piezoelectric thin film and method for producing the same Download PDFInfo
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- CN100590969C CN100590969C CN200610137416A CN200610137416A CN100590969C CN 100590969 C CN100590969 C CN 100590969C CN 200610137416 A CN200610137416 A CN 200610137416A CN 200610137416 A CN200610137416 A CN 200610137416A CN 100590969 C CN100590969 C CN 100590969C
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Abstract
An acoustic resonator according to the present invention includes a substrate 105 , a support section 104 provided on the substrate 105 , a lower electrode 103 provided on the support section 104 , apiezoelectric body 101 provided on the lower electrode 103 , and an upper electrode 102 provided on the piezoelectric body 101 . The lower electrode 103 , the piezoelectric body 101 and the upper electrode 102 form a vibration section 107 . The support section 104 for supporting the vibration section 107 is shaped such that at least one portion of a vertical cross-section thereof has a curvature.
Description
Technical field
The method that the present invention relates to comprise the device of piezoelectric membrane and make this device, relate in particular to the acoustic resonator and the electrical micro-machine switch that can be used for such as in the radio circuit of the wireless communication terminal of mobile phone, Wireless LAN apparatus etc., and the method that is used to make this device.
Background technology
Being built in such as the assembly in the electronic equipments such as mobile phone need be compact, light and little loss, and high reliability is provided.In order to satisfy these demands, all kinds of devices of piezoelectric membrane have been proposed to comprise.Being contemplated to be device compact, light and little loss is filter and the electrical micro-machine switch that for example uses acoustic resonator.
Figure 13 A is the cross sectional view of a kind of exemplary conventional acoustic resonator (referring to the open No.60-68711 of Japan Patent).In this routine acoustic resonator, comprise and place the oscillating component of the piezoelectrics 1 between top electrode 2 and the bottom electrode 3 to be placed on the substrate 5.In substrate 5, form resonant cavity 4 by the partially-etched substrate 5 of accurate processing method that uses the surface execution that does not form said elements from it.
When by top electrode 2 and bottom electrode 3 on the thickness direction when piezoelectrics 1 apply electric field, this acoustic resonator vibrates on the thickness direction of piezoelectrics 1.Hereinafter, with reference to Figure 13 B-13D, will the operation of acoustic resonator in the situation of the thickness longitudinal vibration that uses infinite slab be described.Figure 13 B is the schematic axonometric projection view of acoustic resonator, and it illustrates its operation.Figure 13 C is the frequency characteristic that the acoustic resonator admittance is shown.Figure 13 D illustrates the equivalent electric circuit configuration of acoustic resonator.
When electric field was applied between top electrode 2 and the bottom electrode 3, electric energy converted mechanical energy to by piezoelectrics 1.The mechanical oscillation that excited are vibrations of expanding on thickness direction, and expansion and contraction on the direction identical with electric field.The frequency that acoustic resonator uses the resonance on piezoelectrics 1 thickness direction to come to equal 1/2 wavelength place with thickness is passed through resonant operation.The thickness longitudinal vibration of piezoelectrics 1 is guaranteed by resonant cavity 4.Shown in Figure 13 D, the equivalent electric circuit of acoustic resonator comprises: comprise the series resonance part of capacitor C1, inductor L1 and resistor R 1, and the capacitor C0 that partly is connected in parallel with series resonance.Therefore, the admittance of acoustic resonator is maximum at resonance frequency fr place, and minimum at anti-resonance frequency fa place.Fr=1/{2 π √ (L1C1) }, and fa=fr √ (1+C1/C0).
Figure 14 is to use the axonometric projection view (referring to the open No.2003-217421 of for example Japan Patent) of the exemplary conventional electrical micro-machine switch of piezoelectric effect.The driving short circuit mechanism 15 of the path that conventional electrical micro-machine switch comprises the signal conductor 12 that places on the substrate 11, be used for the shielded radio frequency signal and provide control signal to move the piezoelectrics 16 of the drive unit that drives short circuit mechanism 15 as being used to.
With reference to Figure 14, be shielded signal, apply voltage to piezoelectrics 16, so that signal conductor 12 and earth lead 13 contact with conductive layer 17 on being arranged on the lower surface that drives short circuit mechanism 15 as control signal.In order to allow signal to pass through, do not apply voltage to electric conductor 16.
In fact, except thickness direction vibration mode (vertical pattern), the acoustic resonator of above-mentioned routine also has along being parallel to the vibration mode (transverse mode) that electrode is propagated.In acoustic resonator, the part of oscillating component is fixed in substrate 5.Therefore, the vibration that is parallel to the electrode surface propagation is reflected on the fixed position, thereby becomes unnecessary vibration.This unnecessary vibration causes looking genuine in the frequency characteristic.
For fear of looking genuine of causing by transverse mode, the technology that forms the polygon resonant cavity in acoustic resonator as shown in figure 15 (referring to the open No.2000-332568 of for example Japan Patent) has been proposed.Because the resonant cavity of acoustic resonator is polygonal, propagate so be different from the vibration of the transverse mode that reflects on the fixed position on the direction of incident direction.Thereby, reduced and looked genuine.That is, avoided the appearance of looking genuine in the frequency band of thickness direction vibration mode of acoustic resonator.
Yet this technology has such problem: for example need to be each acoustic resonator design electrode resonant cavity, and all need redesign when the frequency of transmission path or impedance change.
Conventional acoustic resonator has the structure of stress raisers in piezoelectric membrane.Therefore, the problem of layering and crackle takes place in manufacture process.
In order to address these problems, acoustic resonator shown in Figure 16 (referring to the open No.2005-45694 of for example Japan Patent) is disclosed.In this acoustic resonator, on the step portion corresponding to the edge of gap V at the interface between piezoelectric membrane 32 and the bottom electrode 31, capable with substrate 30 air spotss and to have a plurality of planes of relative substrate 30 surperficial different angles α, β and γ stacked to the top of gap V from substrate 30.Because this structure (air crossing) can prevent that stress raisers are in piezoelectric membrane 32.
Yet, using this technology, supporting course 40 need have complicated shape, so that a plurality of different angles of the interface of piezoelectric membrane 32 and bottom electrode 31 with respect to substrate 30 surfaces are provided.This has for example problem of complicated manufacture method, concentrates although it has relaxed stress.
In the electrical micro-machine switch of above-mentioned routine, drive short circuit mechanism 15 be connected with being perpendicular to one another with supporting part 9.Therefore, when driving short circuit mechanism 15 when mechanically mobile, stress concentrates on the tie point, thereby has reduced Mechanical Reliability.
Summary of the invention
Therefore, an object of the present invention is to provide a kind of device that comprises piezoelectric membrane, this device can prevent to produce unnecessary vibration thereby suppressed to look genuine by transverse mode, and can also avoid stress to concentrate the reduction that causes reliability.
Another object of the present invention provides a kind of effective ways that are used to make this device.
The present invention relates to a kind of acoustic resonator with the preset frequency vibration, and a kind of electrical micro-machine switch that utilizes piezoelectric effect and electrostatic effect.For achieving the above object, acoustic resonator according to the present invention comprises: substrate; Comprise the piezoelectrics that form by piezoelectric membrane and with piezoelectrics be clipped in therebetween top electrode and the oscillating component of bottom electrode; And placing supporting part between oscillating component and the substrate, this supporting part has the vertical cross-section that its at least a portion has curvature.Electrical micro-machine switch according to the present invention comprises: substrate; Place the drive electrode on the substrate; Moveable part, comprise the piezoelectrics that form by piezoelectric membrane, with piezoelectrics be clipped in therebetween top electrode and the travelling electrode of bottom electrode and holding wire; And placing supporting part between moveable part and the substrate, this supporting part has the vertical cross-section that its at least a portion has curvature.
The vertical cross-section of supporting part is preferably the narrowest or the wideest near the middle body of its thickness direction or its.The surface that contacts with bottom electrode in the surface that contacts with substrate in the supporting part and the supporting part is preferably parallel to each other.
Above-mentioned acoustic resonator and electrical micro-machine switch work alone, and perhaps can place multiple device, filter, duplexer or comprise a plurality of acoustic resonators and/or the communicator of electrical micro-machine switch.
Have the acoustic resonator of said structure and electrical micro-machine switch separately by the following steps manufacturing: on first substrate, form piezoelectrics; On a first type surface of these piezoelectrics, form bottom electrode; On this bottom electrode, form first supporting member; On second substrate, form second supporting member; First supporting member and second supporting member are bonded together; After engagement step, separate first substrate, thereby the piezoelectrics that will have thereon a bottom electrode that forms are from first substrate-transfer to the second substrate; And on another first type surface of these piezoelectrics, form top electrode.
Usually, engagement step is that eutectic crystallization by first supporting member and second supporting member engages and carries out.In this case, first supporting member and second supporting member are preferably the multilayer film that contains golden at least tin (AuSn) or gold silicon (AuSi).First supporting member and second supporting member can be formed has different in width or thickness.
According to the present invention, supporting part is as the element with a plurality of resonance frequencys, thus the unnecessary vibration that disperses (decay) to produce because of the vibration seepage.As a result, can obtain not have the mechanical admittance curves of looking genuine between the resonance frequency of oscillating component and the anti-resonance frequency.
From the detailed description of following the present invention with reference to accompanying drawing, it is more apparent that these and other objects of the present invention, feature, aspect and advantage will become.
Description of drawings
Fig. 1 is the cross sectional view of the structure of schematically illustrated acoustic resonator according to an embodiment of the invention.
Fig. 2 A-2F is the cross sectional view of the structure of schematically illustrated acoustic resonator according to other embodiments of the present invention.
The schematically illustrated a kind of method that is used to make acoustic resonator shown in Figure 1 of Fig. 3 A-3B.
Fig. 4 A illustrates the frequency characteristic of acoustic resonator according to an embodiment of the invention.
Fig. 4 B illustrates the frequency characteristic of conventional acoustic resonator.
Fig. 5 A and 5B are respectively the axonometric drawing and the cross sectional view of electrical micro-machine switch according to an embodiment of the invention.
Fig. 6 A-6G illustrates the structure of the electrical micro-machine switch of other embodiment of the present invention.
The schematically illustrated method that is used for the electrical micro-machine switch shown in the shop drawings 5B of Fig. 7 A and 7B.
Fig. 8 A illustrates an exemplary driver circuits of electrical micro-machine switch.
Fig. 8 B illustrates an exemplary operation of the electrical micro-machine switch shown in Fig. 8 A.
Fig. 9 illustrates an exemplary circuit that comprises according to the ladder-type filter of acoustic resonator of the present invention.
Figure 10 illustrates an exemplary circuit that comprises according to the synthesizer of acoustic resonator of the present invention and electrical micro-machine switch.
Figure 11 illustrates an example of the duplexer that comprises ladder-type filter.
Figure 12 illustrates an example of the communicator that comprises duplexer.
Figure 13 A-13D illustrates a conventional acoustic resonator.
Figure 14 is the axonometric drawing of conventional electrical micro-machine switch.
Figure 15 is illustrated in an example of the resonant cavity that uses in the conventional acoustic resonator.
Figure 16 illustrates another conventional acoustic resonator.
Embodiment
(exemplary configurations of acoustic resonator)
Fig. 1 is the cross sectional view of the structure of schematically illustrated acoustic resonator according to an embodiment of the invention.Acoustic resonator shown in Figure 1 comprises substrate 105, place supporting part 104 on the substrate 105, place bottom electrode 103 on the supporting part 104, place the piezoelectrics 101 on the bottom electrode 103 and place top electrode 102 on the piezoelectrics 101.Bottom electrode 103, piezoelectrics 101 and top electrode 102 constitute oscillating component 107.Be used as resonant cavity 106 by substrate 105, supporting part 104 and 103 area surrounded of bottom electrode.Resonant cavity 106 is the spaces that are provided with for the exciting of thickness longitudinal vibration that does not hinder vibration 107.
Piezoelectrics 101 are by such as aluminium nitride (AlN), zinc oxide (ZnO), zirconic acid aluminium titanates (PZT)-system material, lithium niobate (LiNbO
3), lithium tantalate (LiTaO
3) or potassium niobate (KNbO
3) wait piezoelectric to make.Top electrode 102 and bottom electrode 103 are by making such as molybdenum (Mo), aluminium (Al), tungsten (W), platinum (Pt), gold (Au), titanium (Ti) or electric conducting materials such as copper (Cu), its multiple layer metal or its alloy.Substrate 105 is made by silicon (Si), GaAs (GaAs), carborundum etc.
A feature of the acoustic resonator of basic invention is that at least a portion that the supporting part 104 that is used to support oscillating component 107 is configured as its vertical cross-section has curvature.The surface that contacts with bottom electrode 103 in the surface that contacts with substrate 105 in the supporting part 104 and the supporting part 104 is preferably parallel to each other.For example, as shown in Figure 1, supporting part 104 narrows down near the middle body of its thickness direction or its.Supporting part 104 is formed to have and prevents to produce the vertical cross-section that causes the unnecessary vibration of looking genuine near resonance frequency.Supporting part has this reason that prevents to produce the shape of unnecessary vibration and is regarded as described below.
For routine techniques, unnecessary vibration produces because vibration leaks into substrate on the fixed position as mentioned above.Therefore, in the situation of resonance frequency near the resonance frequency of oscillating component 107 of supporting part 104, the vibration that is excited by oscillating component 107 becomes unnecessary vibration when this vibration leaks into substrate 105 via supporting part 104.The vertical cross-section of the supporting part of conventional acoustic resonator is a rectangle, trapezoidal or do not have other shape of curvature.Therefore, have only a resonance frequency of supporting part 104 can cause big unnecessary vibration.
According to the present invention, supporting part 104 is shaped as has the vertical cross-section that curvature is arranged.Because this structure makes supporting part 104 as the element with a plurality of resonance frequencys, thereby disperseed (decay) by vibrating the unnecessary vibration that seepage produces.As a result, obtain not have the mechanical admittance curves (referring to Fig. 4 A as described below) of looking genuine between resonance frequency and the anti-resonance frequency.
Have curvature as long as supporting part 104 forms at least a portion of its vertical cross-section, just can provide above-mentioned effect according to acoustic resonator of the present invention.Therefore, the shape of supporting part 104 is not limited to shape shown in Figure 1, and can be the shape shown in Fig. 2 A-2F.Supporting part 104 can be a circular element or can comprise a plurality of posts.
(being used to make the illustrative methods of acoustic resonator)
The schematically illustrated preferred approach that is used to make acoustic resonator of Fig. 3 A and 3B with said structure.By this method, acoustic resonator as shown in Figure 1 uses the wafer to wafer joint method to make.
At first, prepare the laminate substrate 108 that forms by silicon, glass, sapphire etc.On laminate substrate 108, form piezoelectrics 101 (Fig. 3 A, step a).On piezoelectrics 101, form bottom electrode 103 (Fig. 3 A, step b) by film formation and pattern.Then, on bottom electrode 103, formation will become supporting member 104a (Fig. 3 A, the step c) of the part of supporting part 104.Then, preparation is used to support the substrate 105 of oscillating component 107.On substrate 105, formation will be called supporting member 104b (Fig. 3 A, the step d) of the part of supporting part 104.Supporting member 104a and 104b are formed by gold, tin etc.
Then, laminate substrate 108 and substrate 105 be placed with the supporting member 104a that makes laminate substrate 108 and substrate 105 supporting member 104b toward each other.Supporting member 104a and 104b are by the gold and the eutectic crystallization of tin be bonded together (Fig. 3 A, step e).For example,, solidify this gold tin then, can realize having the supporting part 104 (Fig. 3 B, the step f) that are not by the structure of etching acquisition easily by melting golden tin once with 0.3Mpa at 375 ℃.Then, from the sub-assembly of two layers 105 and 108, remove layer and form substrate 108 (Fig. 3 B, step g).Laminate substrate 108 can remove by for example wet etching or dry etching.To g, the element that is formed at first on the laminate substrate 108 is transferred on the substrate 105 by step e.Then, on piezoelectric layer 101, form top electrode 102 (Fig. 3 B, step h) by film formation and pattern.At last, remove the unnecessary part (Fig. 3 B, step I) of piezoelectrics 101 by etching.Thereby, finish acoustic resonator shown in Figure 1.
Manufacturing method according to the invention as the material of supporting part 104, and is used the easy engagement method of the eutectic crystallization that the disposable fusing of metal material solidifies then with golden tin.By this method, supporting part 104 can have the vertical cross-section (resonant cavity 106 can have the vertical cross-section of the complicated shape that curvature is arranged) that is not by the complicated shape with curvature of acquisitions such as etching.
Fig. 4 A illustrates the frequency characteristic of acoustic resonator made according to the method for the present invention.Fig. 4 B illustrate by conventional manufacture method (each layer that for example on substrate, superpose successively from top to bottom, remove sacrifice layer (sacrificelayer) simultaneously a part to form the method for resonant cavity) frequency characteristic of the acoustic resonator made.As intelligible from Fig. 4 A and 4B, the resonance frequency in conventional acoustic resonator or near produce it look genuine can not produce in acoustic resonator according to the present invention.
In the present embodiment, gold and tin are used for eutectic crystallization to form supporting part 104.The material (for example gold and silicon) that also can use other to engage by eutectic crystallization.Have the material of meltability in various degree by use, can form the supporting part of cross section easily with curvature.Any need comprise Jin Hexi at least among supporting member 104a or the 104b, perhaps can have the sandwich construction that contains Jin Hexi.The thickness of supporting member 104a and 104b and width can freely be provided with.
In the present embodiment, piezoelectrics 101 directly form on substrate 108.Perhaps, another film can place between substrate 108 and the piezoelectrics 101.For example, to place situation on the substrate 108, preferably form the AlN layer on the substrate 108, on the AlN layer, form molybdenum layer, on molybdenum layer, forming piezoelectrics 101 then at the piezoelectrics 101 of AlN.The effect of the influence of the damage that has been taken place when like this, just providing piezoelectrics 101 directly not removed substrate 108.
(exemplary configurations of electrical micro-machine switch)
Fig. 5 A and 5B illustrate the axonometric drawing and the cross-sectional view of electrical micro-machine construction of switch according to an embodiment of the invention.Electrical micro-machine switch shown in Fig. 5 A and Fig. 5 B comprises: substrate 205, place supporting part 204 on the substrate 205, place bottom electrode 203 on the supporting part 204, place piezoelectrics 201 on the bottom electrode 203, place top electrode 202 on the piezoelectrics 201, place the travelling electrode 207 of the holding wire on the first type surface that is equipped with bottom electrode 203 of piezoelectrics 201 and place drive electrode 206 on the substrate 205.Bottom electrode 203, piezoelectrics 201 and top electrode 202 constitute a moveable part 200.Piezoelectrics 201, top electrode 202, bottom electrode 203 and substrate 205 can be by above making about the described same material of acoustic resonator.On substrate 205, two fixed electrodes 208 of holding wire and 209 are arranged on such position: the fixed electrode 208 of holding wire and 209 travelling electrodes 207 by the activation signal line conduction that becomes.
According to a feature of electrical micro-machine switch of the present invention is that at least a portion that the supporting part 204 that is used to support moveable part 200 is configured as its vertical cross-section has curvature.The surface that contacts bottom electrode 203 in the surface that contacts with substrate 205 in the supporting part 204 and the supporting part 204 is preferably parallel to each other.For example, shown in Fig. 5 B, supporting part 204 narrows down near the middle body of its thickness direction or its.Supporting part 104 is formed has (taking place) concentrated in mitigation when conversion at the stress on the coupling part of moveable part 200 and supporting part 204 vertical cross-section.The reason that supporting part has the concentrated shape of this mitigation stress is regarded as described below.
According to the present invention, supporting part 204 is shaped as has the vertical cross-section that curvature is arranged.Because this structure, stress is not concentrated in the coupling part of moveable part 200 and supporting part 204 by dispersion.As a result, the maximum distortion in the time of can reducing conversion, thereby can improve Mechanical Reliability.Because the upper surface of supporting part 204 is parallel with substrate 205, so also can reduce primary stress.Thereby, further reduce maximum distortion.
Have curvature as long as supporting part 204 forms at least a portion of its vertical cross-section, electrical micro-machine switch according to the present invention just can provide above-mentioned effect.Therefore, the electrical micro-machine switch is not limited to moveable part 200 in the cantilever shape of one end by 204 supportings of the supporting part shown in Fig. 5 A and the 5B, and can be other shape.
For example, Fig. 6 A illustrates the electrical micro-machine switch of moveable part in the supported two cantilever shape in its two ends.The electrical micro-machine switch that Fig. 6 B illustrates cantilever shape is connected to an example of common C shape.Fig. 6 C illustrates and uses a plurality of piezoelectric membranes that top electrode and bottom electrode are adjusted to the electrical micro-machine switch with same thickness.Fig. 6 D illustrates the electrical micro-machine switch with the sandwich construction supporting part that comprises multiple material.This electrical micro-machine switch has a contact or a plurality of contact.Supporting part can be formed by electric conducting material, and can be used as circuit.
Fig. 6 E illustrates the electrical micro-machine switch that comprises switch sections 251 and variable capacitance part 252.Fig. 6 F is the equivalent electric circuit configuration of the electrical micro-machine switch shown in Fig. 6 E.Even this electrical micro-machine switch still has the gap under variable capacitance part 252 when thereby the fixed electrode of the travelling electrode of switch sections 251 conducting holding wires and holding wire contacts with each other.The electrical micro-machine switch of use shown in Fig. 6 G, the capacitance of variable capacitance part 252 put on voltage on each electrode by change and change gap width and change.
(being used to make the illustrative methods of electrical micro-machine switch)
The schematically illustrated method for optimizing that is used to make electrical micro-machine switch of Fig. 7 A and 7B with said structure.By using this method, the electrical micro-machine switch shown in Fig. 5 B uses the wafer to wafer joint method to make.
At first, prepare the laminate substrate of making by silicon, glass, sapphire etc. 108.On laminate substrate 108, form piezoelectrics 201 (Fig. 7 A, step a).On piezoelectrics 201, form bottom electrode 203 and travelling electrode 207 (Fig. 7 A, step b) by film formation and pattern.Then, on bottom electrode 203, formation will become supporting member 204a (Fig. 7 A, the step c) of the part of supporting part 204.Then, preparation is used for the substrate 205 of moveable part 200.On substrate 205, formation will become fixed electrode 208 and 209 (not shown in Fig. 7 A or the 7B) (Fig. 7 A, the step d) of supporting member 204b, drive electrode 206 and the holding wire of the part of supporting part 204.Supporting member 204a and 204b are formed by gold, tin etc.
Then, laminate substrate 108 and substrate 205 be placed with the supporting member 204a that makes laminate substrate 108 and substrate 205 supporting member 204b toward each other.Supporting member 204a and 204b are by the gold and the eutectic crystallization of tin be bonded together (Fig. 7 A, step e).For example,, solidify this gold tin then, can realize having the supporting part 204 (Fig. 7 B, the step f) that are not by the structure of etching acquisition easily by melting golden tin once with 0.3Mpa at 375 ℃.Then, remove laminate substrate 108 (Fig. 7 B, step g) from the sub-assembly of two layers 205 and 108.Laminate substrate 108 can remove by for example wet etching or dry etching.To g, the element that is formed at first on the laminate substrate 108 is transferred on the substrate 205 by step e.Then, on piezoelectric layer 201, form top electrode 202 (Fig. 7 B, step h) by film formation and pattern.At last, remove the unnecessary part (Fig. 7 B, step I) of piezoelectrics 201 by etching.Thereby, finish the electrical micro-machine switch shown in Fig. 5 B.
Manufacturing method according to the invention as the material of supporting part 204, and is used the easy engagement method of the eutectic crystallization that the disposable fusing of metal material solidifies then with golden tin.By this method, supporting part 204 can have the vertical cross-section that is not by the complicated shape with curvature of acquisitions such as etching.
(exemplary driver of electrical micro-machine switch)
Fig. 8 A illustrates the exemplary driver circuits of above-mentioned electrical micro-machine switch.Fig. 8 B illustrates the exemplary operation of the drive circuit of electrical micro-machine switch shown in Fig. 8 A.This drive circuit comprises the electrical micro-machine switch (top electrode 202 and the bottom electrode 203 of electrical micro-machine switch are connected respectively to these tie points) between the tie point of the tie point of the switch element A that is connected in series and B and switch element C that is connected in series and D.
State among Fig. 8 B (1): when switch element A is in conducting state (when switch element B is in cut-off state), supply voltage Vd is applied on the V1 terminal.At this moment, switch element C is in cut-off state (switch element D is in conducting state).Therefore, the V2 terminal is the GND current potential.As a result, voltage Vd is applied on the electrical micro-machine switch.
State among Fig. 8 B (2): when switch element A is in conducting state (when switch element B is in cut-off state), supply voltage Vd is applied on the V1 terminal.At this moment, switch element C is in conducting state (switch element D is in cut-off state).Therefore, the V2 terminal is the Vd current potential.As a result, 0V voltage is applied on the electrical micro-machine switch.
State among Fig. 8 B (3): when switch element A is in cut-off state (when switch element B is in conducting state), the V1 terminal is the GND current potential.At this moment, switch element C is in conducting state (switch element D is in conducting state).Therefore, the V2 terminal is the Vd current potential.As a result, voltage-Vd is applied on the electrical micro-machine switch.
State among Fig. 8 B (4): when switch element A is in cut-off state (when switch element B is in conducting state), the V1 terminal is the GND current potential.At this moment, switch element C is in cut-off state (switch element D is in conducting state).Therefore, the V2 terminal is the GND current potential.As a result, 0V voltage is applied on the electrical micro-machine switch.
By such driving, can to the electrical micro-machine switch provide relative supply voltage Vd ± Vd voltage.When each switch element is in conducting state and when each switch element is in cut-off state, the electrical micro-machine switch can switch by piezoelectric effect.Therefore, available ratio is operated by the operation faster speed of the driving voltage in 0 to the Vd scope.
(using the exemplary configurations of acoustic resonator)
Fig. 9 illustrates an exemplary circuit that comprises according to the ladder-type filter of acoustic resonator of the present invention.Ladder-type filter shown in Figure 9 is included in the series connection acoustic resonator that series connection is inserted between the input/output terminal 301, and the acoustic resonator in parallel 303 that inserts in parallel.Be arranged to be higher than the resonance frequency of being out of shape acoustic resonator 303 by the resonance frequency of the acoustic resonator 302 of will connecting, can realize having the ladder-type filter of bandpass characteristics.Preferably, by the resonance frequency of basic coupling series connection acoustic resonator 302 and the anti-resonance frequency of acoustic resonator in parallel 303, can realize having the ladder-type filter of more straight bandpass characteristics.Use above-mentioned acoustic resonator according to the present invention makes energy only concentrate on the expectation vibration, thereby realizes having the ladder-type filter of less loss.
Figure 10 illustrates the exemplary circuit (ladder-type filter switching circuit) that comprises according to the synthesizer of acoustic resonator of the present invention and electrical micro-machine switch.Synthesizer shown in Figure 10 comprises two ladder-type filters as shown in Figure 9 that connected by electrical micro-machine switch 314.
The quantity of attachable ladder-type filter is not limited to as shown in Figures 9 and 10 one or two.The ladder-type filter that can connect greater number.The ladder type structure is not limited to the L type, and can be for example T type or π type.Can use the grid type filter to substitute ladder-type filter.In these cases, can provide substantially the same effect.
Figure 11 illustrates the example of the duplexer 410 that comprises above-mentioned ladder-type filter.Duplexer 410 shown in Figure 11 comprises transmission filter 414, phase shift circuit 415 and transmits terminal 411 and receive the receiving filter 416 that directly is connected in series between the terminal 412, and comprises the antenna terminal 413 that is connected between transmitting filter 414 and the phase deviation circuit 415.Above-mentioned ladder-type filter can be used as transmission filter 414 and receiving filter 416 one of at least.Use this structure, can realize having the duplexer of less loss.
Figure 12 illustrates the communicator 420 that comprises duplexer shown in Figure 11.In communicator shown in Figure 12 420, pass baseband portion 423, amplify, send from antenna 428 by transmitting filter 425 filtering and as radio wave by power amplifier (PA) 424 from the signal of transmission terminal 421.The signal that is received by antenna 428 is by receiving filter 426 filtering, amplified, passed baseband portion 423 and be sent to and receive terminal 422 by low noise amplifier (LNA) 427.Above-mentioned ladder-type filter can be used as transmitting filter 425 and receiving filter 426 one of at least.Use this structure, the communicator 420 that can realize having lower power consumption and reduce noise.
Although described the present invention in detail, in the description in all respects of front all be illustrative and and nonrestrictive.Be appreciated that and design many other changes and variation and do not deviate from scope of the present invention.
Claims (10)
1. acoustic resonator with preset frequency vibration comprises:
Substrate;
Oscillating component comprises the piezoelectrics that formed by piezoelectric membrane and described piezoelectrics is clipped in therebetween top electrode and bottom electrode that these piezoelectrics, top electrode and bottom electrode are overlapping on the upright projection direction with same size; And
Place the supporting part between described bottom electrode and the described substrate, described supporting part has the vertical cross-section that its at least a portion has curvature.
2. acoustic resonator as claimed in claim 1 is characterized in that, the vertical cross-section of described supporting part is the narrowest near the middle body of its thickness direction or its.
3. acoustic resonator as claimed in claim 1 is characterized in that, the vertical cross-section of described supporting part is the wideest near the middle body of its thickness direction or its.
4. acoustic resonator as claimed in claim 1 is characterized in that, what contact with described bottom electrode in the surface that contacts with described substrate in the described supporting part and the described supporting part is surperficial parallel to each other.
5. electrical micro-machine switch that utilizes piezoelectric effect and electrostatic effect comprises:
Substrate;
Place the drive electrode on the described substrate;
Moving part, comprise the piezoelectrics that form by piezoelectric membrane, with described piezoelectrics be clipped in therebetween top electrode and the travelling electrode of bottom electrode and holding wire; And
Place the supporting part between described moving part and the described substrate, described supporting part has the vertical cross-section that its at least a portion has curvature, and this vertical cross-section is the narrowest near the middle body of thickness direction.
6. electrical micro-machine switch as claimed in claim 5 is characterized in that, what contact with described bottom electrode in the surface that contacts with described substrate in the described supporting part and the described supporting part is surperficial parallel to each other.
7. a synthesizer that comprises a plurality of acoustic resonators and at least one electrical micro-machine switch is characterized in that described synthesizer comprises at least one acoustic resonator as claimed in claim 1 and at least one electrical micro-machine switch as claimed in claim 5.
8. filter that comprises at least one acoustic resonator as claimed in claim 1.
9. duplexer that comprises at least one synthesizer as claimed in claim 7.
10. communicator that comprises at least one duplexer as claimed in claim 9.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005304170 | 2005-10-19 | ||
| JP2005304170 | 2005-10-19 | ||
| JP2005305486 | 2005-10-20 | ||
| JP2006125550 | 2006-04-28 |
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| CN1953323A CN1953323A (en) | 2007-04-25 |
| CN100590969C true CN100590969C (en) | 2010-02-17 |
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| CN109509830A (en) * | 2018-10-09 | 2019-03-22 | 佛山市卓膜科技有限公司 | A kind of piezoelectric transducer |
| CN109459068A (en) * | 2018-10-09 | 2019-03-12 | 佛山市卓膜科技有限公司 | A kind of precision piezoelectric sensor |
| CN110588177B (en) * | 2019-09-30 | 2021-01-15 | 西安交通大学 | Transfer printing manufacturing method of beam film type piezoelectric array printing head |
| CN212322915U (en) * | 2020-05-26 | 2021-01-08 | 瑞声声学科技(深圳)有限公司 | MEMS capacitive switch and electronic equipment |
| CN113852361B (en) * | 2021-11-26 | 2022-04-01 | 深圳新声半导体有限公司 | Packaging substrate structure of chip surface acoustic wave filter |
| WO2024027033A1 (en) * | 2022-08-04 | 2024-02-08 | Huawei Technologies Co., Ltd. | Acoustic resonator |
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2006
- 2006-10-18 CN CN200610137416A patent/CN100590969C/en not_active Expired - Fee Related
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