CN100585891C - Luminous diode light extraction structure and its manufacture method - Google Patents
Luminous diode light extraction structure and its manufacture method Download PDFInfo
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- CN100585891C CN100585891C CN200610148299A CN200610148299A CN100585891C CN 100585891 C CN100585891 C CN 100585891C CN 200610148299 A CN200610148299 A CN 200610148299A CN 200610148299 A CN200610148299 A CN 200610148299A CN 100585891 C CN100585891 C CN 100585891C
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- layer
- light
- nucleating layer
- emitting diode
- nucleating
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000000605 extraction Methods 0.000 title abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims description 5
- 239000013256 coordination polymer Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 8
- 230000006911 nucleation Effects 0.000 abstract 5
- 238000010899 nucleation Methods 0.000 abstract 5
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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Abstract
The invention discloses a light extraction structure of a light-emitting diode. A nucleation layer is arranged on a P-shaped semiconductor and the upper surface of the nucleation layer has a plurality of upward warts. An armor layer is arranged on the nucleation layer and the upper surface of the armor layer has upward warts which are corresponding to the warts on the upper surface of the nucleation layer. The armor layer has a contacting layer which goes ups and downs following the ups and downs of the warts on the surface of the armor layer. The P typed electrode is arranged on the contacting layer. The invention also discloses a manufacturing method for the light extraction structure of a light-emitting diode. After generating the P typed GaN, the nucleation layer and the armor layer is generated with a peaking surface. The contacting layer and the P typed electrode are then manufactured. A light extraction structure of a light-emitting diode is manufactured according to the method in the invention has the advantages of simple structure, easy realization, furthermore, the manufactured light extraction structure of the light-emitting diode has a high efficiency of extracting light and no occurrence of the phenomenon of point discharge, as well as a good crystal structure thus greatly increasing the performance of the light-emitting diode.
Description
Technical field
The present invention relates to a kind of semiconductor device structure, especially a kind of light emitting structures of light-emitting diode.The invention still further relates to a kind of manufacture method of light emitting structures of light-emitting diode.
Background technology
Existing light-emitting diode has one deck roughened layer on the P type semiconductor structure, the surface of this roughened layer has many depressions, just because of the surface of these depressions, can make light that light-emitting diode produces when device surface penetrates, avoid causing the loss of luminous power, and reduce the light extraction efficiency of device because total reflection takes place.Existing light-emitting diode is this to contain the manufacture method of roughened layer of many depressions normally after the P type semiconductor structure of having grown, use relatively low temperature continued growth one deck P type semiconductor roughened layer again, because temperature is lower, therefore can make crystal structure speed up and cause skewness, thereby obtain having the surface of many depressions.The device architecture of this light-emitting diode can wherein comprise multiple quantum well layer 6, P type AlGaN layer 7, P type GaN layer 8 and roughened layer 10 from top to bottom referring to shown in Figure 1, has many depressions 13 on the described roughened layer 10.These depressions all are some V-arrangement depressions, and these V-arrangement depressions are easy to take place the phenomenon of point discharge.In addition, because roughened layer is with lower temperature growth, therefore can reduce the crystal mass of the semiconductor structure of previous making.These problems also all may cause the decline of LED device antistatic effect.
Summary of the invention
Technical problem to be solved by this invention provides a kind of light emitting structures of light-emitting diode, can make the roughened layer of light-emitting diode that the phenomenon of point discharge can not take place, and improves the light extraction efficiency of light-emitting diode.
For solving the problems of the technologies described above, the technical scheme of the light emitting structures of light-emitting diode of the present invention is, nucleating layer is arranged on p type semiconductor layer, described nucleating layer upper surface has many kicks that make progress, above the described nucleating layer roughened layer is arranged, described roughened layer upper surface has and the corresponding kick that makes progress of the kick of described nucleating layer upper surface, and the contact layer of one deck with the kick fluctuating on roughened layer surface arranged on the described roughened layer, and described P type electrode is arranged on the described contact layer.
Another technical problem to be solved by this invention is, a kind of manufacture method of light emitting structures of light-emitting diode is provided, and its step is simple, and the LED device of producing has crystal mass preferably, improves the antistatic effect of device.
For solving the problems of the technologies described above, the technical scheme of the manufacture method of the light emitting structures of light-emitting diode of the present invention is after growth P-type GaN, to comprise the steps:
(1) grows into stratum nucleare;
(2) roughened layer of growing surface projection;
(3) make contact layer and P type electrode.
The light emitting structures that the present invention makes light-emitting diode by said method, its step is simple, is easy to realize, the light emitting structures light extraction efficiency height of the light-emitting diode of producing, point discharge phenomenon can not take place, and have good crystal structure, improved the performance of light-emitting diode greatly.
Description of drawings
The present invention is further detailed explanation below in conjunction with drawings and Examples:
Fig. 1 is the schematic diagram of the light emitting structures of existing light-emitting diode;
Fig. 2 is the schematic diagram of the structure of LED device of the present invention;
Fig. 3 is the schematic diagram of light-emitting diode roughened layer of the present invention and contact layer.
Reference numeral is among the figure, 1. Sapphire Substrate; 2. buffering nucleating layer; 3. unadulterated GaN layer; 4.N type is mixed the GaN layer of Si; 5.N type electrode; 6. multiple quantum well layer; 7.P type AlGaN layer; 8.P type GaN layer; 9. nucleating layer; 10. roughened layer; 11. contact layer; 12.P type electrode; 13. the depression of roughened layer; 14. the projection of nucleating layer; 15. the projection of roughened layer.
Embodiment
The applied luminous diode device structure of the light emitting structures of light-emitting diode of the present invention can be referring to shown in Figure 2, include Sapphire Substrate 1, buffering nucleating layer 2, unadulterated GaN layer 3, the N type is mixed the GaN layer 4 of Si, multiple quantum well layer 6, P type AlGaN layer 7, P type GaN layer 8, roughened layer 10 and contact layer 11, the GaN layer 4 that described N type is mixed Si is provided with N type electrode 5, wherein light emitting structures comprises p type semiconductor layer, described p type semiconductor layer comprises P type AlGaN layer 7 that is positioned at lower floor and the P type GaN layer 8 that is positioned at the upper strata, nucleating layer 9 is arranged on p type semiconductor layer, as shown in Figure 3, described nucleating layer 9 upper surfaces have many kicks that make progress 14, above the described nucleating layer 9 roughened layer 10 is arranged, described roughened layer 10 upper surfaces have the kick 14 corresponding kicks that make progress 15 with described nucleating layer 9 upper surfaces, the contact layer 11 of one deck with kick 15 fluctuatings on roughened layer surface arranged on the described roughened layer 10, and described P type electrode 12 is arranged on the described contact layer 11.
The material of described nucleating layer is a kind of among GaN, SiN, AlN or the MgN.
Compare with existing light-emitting diode, the roughened layer of light-emitting diode of the present invention has replaced depression in the existing light-emitting diode roughened layer with the projection on surface, in the light generation total reflection of avoiding producing, also avoid the appearance of point discharge phenomenon, improved the antistatic effect of device greatly.
The present invention also provides a kind of manufacture method of light emitting structures of above-mentioned light-emitting diode, after growth P-type GaN, comprises the steps:
(1) grows into stratum nucleare;
(2) roughened layer of growing surface projection;
(3) make contact layer and P type electrode.
In the described step (1), the growing method of described nucleating layer is to feed the Ga element, the nucleating layer that formation is made of GaN.
Temperature when the nucleating layer of described GaN is grown is 500 ℃～800 ℃, and reaction pressure is 100torr～500torr, feeds NH3 and H2 mist during reaction, the NH3 flow is 5L～40L, the H2 flow is 5L～40L, and feeds SiH4, forms the nucleating layer of GaN.
In the described step (1), the growing method of described nucleating layer can also be to feed the Si element, the nucleating layer that formation is made of SiN.
Temperature when the nucleating layer of described SiN is grown is 800 ℃～1000 ℃, and reaction pressure is 100torr～500torr, feeds NH during reaction
3And H
2Mist, NH
3Flow is 5L～40L, H
2Flow is 5L～40L, and feeds SiH
4, the nucleating layer of formation SiN stops to feed SiH afterwards
4
In the described step (1), the growing method of described nucleating layer can also be to feed the Al element, the nucleating layer that formation is made of AlN.
Temperature when the nucleating layer of described AlN is grown is 800 ℃～1000 ℃, and reaction pressure is 100torr～500torr, feeds NH during reaction
3And H
2Mist, NH
3Flow is 5L～40L, H
2Flow is 5L～40L, and feeds TMAl, forms the nucleating layer of AlN, stops to feed TMAl afterwards.
In the described step (1), the growing method of described nucleating layer can also be to feed the Mg element, the nucleating layer that formation is made of MgN.
Temperature when the nucleating layer of described MgN is grown is 800 ℃～1000 ℃, and reaction pressure is 100torr～500torr, feeds NH during reaction
3And H
2Mist, NH
3Flow is 5L～40L, H
2Flow is 5L～40L, and feeds CP
2Mg, the nucleating layer of formation MgN stops to feed CP afterwards
2Mg.
In the described step (2), during the growth roughened layer, the feeding flow is the TMGa less than 100sccm, and the CP of 200sccm～1600sccm
2Mg.
Light emitting structures that the present invention makes light-emitting diode by said method has avoided low-temperature epitaxy GaN crystal that the crystal of device other parts is exerted an influence, thereby has improved the crystal mass of device, has increased light extraction efficiency and antistatic effect.
Claims (9)
1. the light emitting structures of a light-emitting diode, it is characterized in that, nucleating layer is arranged on p type semiconductor layer, described nucleating layer upper surface has many kicks that make progress, above the described nucleating layer roughened layer is arranged, described roughened layer upper surface has and the corresponding kick that makes progress of the kick of described nucleating layer upper surface, and the contact layer of one deck with the kick fluctuating on roughened layer surface arranged on the described roughened layer, and described P type electrode is arranged on the described contact layer.
2. the light emitting structures of light-emitting diode according to claim 1 is characterized in that, described p type semiconductor layer comprises the P type AlGaN layer that is positioned at lower floor and is positioned at the P type GaN layer on upper strata.
3. the light emitting structures of light-emitting diode according to claim 1 is characterized in that, the material of described nucleating layer is a kind of among GaN, SiN, AlN or the MgN.
4. the manufacture method of the light emitting structures of a light-emitting diode as claimed in claim 1 is characterized in that, after the growing P-type semiconductor layer, comprises the steps:
(1) grows into stratum nucleare;
(2) roughened layer of growing surface projection;
(3) make contact layer and P type electrode.
5. the manufacture method of the light emitting structures of light-emitting diode according to claim 4, it is characterized in that, in the described step (1), the growing method of described nucleating layer is, feed the Ga element, form the nucleating layer that is made of GaN, the temperature the when nucleating layer of described GaN is grown is 500 ℃～800 ℃, reaction pressure is 100torr～500torr, feeds NH during reaction
3And H
2Mist, NH
3Flow is 5L～40L, H
2Flow is 5L～40L, and feeds SiH
4, the nucleating layer of formation GaN.
6. the manufacture method of the light emitting structures of light-emitting diode according to claim 4, it is characterized in that, in the described step (1), the growing method of described nucleating layer is, feed the Si element, form the nucleating layer that is made of SiN, the temperature the when nucleating layer of described SiN is grown is 800 ℃～1000 ℃, reaction pressure is 100torr～500torr, feeds NH during reaction
3And H
2Mist, NH
3Flow is 5L～40L, H
2Flow is 5L～40L, and feeds SiH
4, the nucleating layer of formation SiN stops to feed SiH afterwards
4
7. the manufacture method of the light emitting structures of light-emitting diode according to claim 4, it is characterized in that, in the described step (1), the growing method of described nucleating layer is, feed the Al element, form the nucleating layer that is made of AlN, the temperature the when nucleating layer of described AlN is grown is 800 ℃～1000 ℃, reaction pressure is 100torr～500torr, feeds NH during reaction
3And H
2Mist, NH
3Flow is 5L～40L, H
2Flow is 5L～40L, and feeds TMAl, forms the nucleating layer of AlN, stops to feed TMAl afterwards.
8. the manufacture method of the light emitting structures of light-emitting diode according to claim 4, it is characterized in that, in the described step (1), the growing method of described nucleating layer is, feed the Mg element, form the nucleating layer that is made of MgN, the temperature the when nucleating layer of described MgN is grown is 800 ℃～1000 ℃, reaction pressure is 100torr～500torr, feeds NH during reaction
3And H
2Mist, NH
3Flow is 5L～40L, H
2Flow is 5L～40L, and feeds CP
2Mg, the nucleating layer of formation MgN stops to feed CP2Mg afterwards.
9. the manufacture method of the light emitting structures of light-emitting diode according to claim 4 is characterized in that, in the described step (2), during the growth roughened layer, the feeding flow is the TMGa less than 100sccm, and the CP of 200sccm～1600sccm
2Mg.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610148299A CN100585891C (en) | 2006-12-29 | 2006-12-29 | Luminous diode light extraction structure and its manufacture method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610148299A CN100585891C (en) | 2006-12-29 | 2006-12-29 | Luminous diode light extraction structure and its manufacture method |
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| Publication Number | Publication Date |
|---|---|
| CN101212001A CN101212001A (en) | 2008-07-02 |
| CN100585891C true CN100585891C (en) | 2010-01-27 |
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| CN200610148299A Expired - Fee Related CN100585891C (en) | 2006-12-29 | 2006-12-29 | Luminous diode light extraction structure and its manufacture method |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101567414B (en) * | 2009-06-04 | 2012-07-25 | 上海蓝光科技有限公司 | Light-emitting diode chip and manufacturing method thereof |
| CN104300052A (en) * | 2014-10-11 | 2015-01-21 | 北京工业大学 | LED chip structure of graphene structure and manufacturing method thereof |
| CN105023976B (en) * | 2015-06-10 | 2017-08-25 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial growth methods |
| CN107768494B (en) * | 2017-09-27 | 2020-04-03 | 安徽三安光电有限公司 | LED epitaxial structure and preparation method thereof |
| WO2020047814A1 (en) * | 2018-09-07 | 2020-03-12 | 苏州晶湛半导体有限公司 | Semiconductor structure and preparation method thereof |
| CN112133797B (en) * | 2020-08-11 | 2021-11-05 | 华灿光电（浙江）有限公司 | Growth method of light emitting diode epitaxial wafer |
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