CN100570382C - A kind of integrate circuit testing structure and using method thereof - Google Patents
A kind of integrate circuit testing structure and using method thereof Download PDFInfo
- Publication number
- CN100570382C CN100570382C CNB2006101180238A CN200610118023A CN100570382C CN 100570382 C CN100570382 C CN 100570382C CN B2006101180238 A CNB2006101180238 A CN B2006101180238A CN 200610118023 A CN200610118023 A CN 200610118023A CN 100570382 C CN100570382 C CN 100570382C
- Authority
- CN
- China
- Prior art keywords
- press welding
- welding block
- fuse
- grid
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006101180238A CN100570382C (en) | 2006-11-07 | 2006-11-07 | A kind of integrate circuit testing structure and using method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006101180238A CN100570382C (en) | 2006-11-07 | 2006-11-07 | A kind of integrate circuit testing structure and using method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101178423A CN101178423A (en) | 2008-05-14 |
CN100570382C true CN100570382C (en) | 2009-12-16 |
Family
ID=39404753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101180238A Expired - Fee Related CN100570382C (en) | 2006-11-07 | 2006-11-07 | A kind of integrate circuit testing structure and using method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100570382C (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102253324B (en) * | 2011-06-17 | 2016-01-27 | 上海集成电路研发中心有限公司 | A kind of test structure of MOS device hot carrier's effect and method of testing |
CN103969544B (en) * | 2014-03-04 | 2018-02-16 | 深圳博用科技有限公司 | A kind of integrated circuit high pressure pin continuity testing method |
CN106898562A (en) * | 2015-12-18 | 2017-06-27 | 中芯国际集成电路制造(上海)有限公司 | The method of the breakdown voltage of semiconductor structure and test grid oxic horizon |
CN107393908A (en) * | 2017-08-31 | 2017-11-24 | 长江存储科技有限责任公司 | Mos gate oxygen applied to chip device test cell protects system and method |
CN109860150A (en) * | 2019-02-28 | 2019-06-07 | 德淮半导体有限公司 | The test circuit and test method of semiconductor devices |
-
2006
- 2006-11-07 CN CNB2006101180238A patent/CN100570382C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101178423A (en) | 2008-05-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100570382C (en) | A kind of integrate circuit testing structure and using method thereof | |
Moens et al. | Hot-carrier degradation phenomena in lateral and vertical DMOS transistors | |
CN102024792A (en) | Semiconductor device for electrostatic discharge protection | |
CN102621473A (en) | Test method generated by monitoring negative bias temperature instability (NBTI) effect interface states in real time | |
CN103576066B (en) | Method for measuring service life of hot carrier of semiconductor device | |
CN102169869B (en) | Reliability testing structure and method for detecting crystal orientation correlation of MOS (Metal Oxide Semiconductor) components | |
CN102176442A (en) | Test structure and method for measuring HCI (hot carrier injection) reliability of MOS (metal oxide semiconductor) device | |
CN104183596B (en) | ESD-protection structure | |
CN101562187B (en) | Silicon-on-insulator (SOI) circuit ESD global protecting structure | |
CN103646944A (en) | Double-mode electro-static discharge protection IO circuit | |
CN101399264A (en) | Cdm ESD protection for integrated circuits | |
TW564509B (en) | Evaluation Method of semiconductor charge up damage and apparatus | |
CN102623404B (en) | Manufacturing method for electrostatic discharge (ESD) device, ESD device and electronic equipment | |
CN109959837A (en) | A kind of electric-leakage detection circuit | |
CN106960802B (en) | A kind of the test device and test method of semiconductor static electric current | |
CN108878402A (en) | The test method of semi-conductor test structure and transistor leakage | |
Galy | Electro Static Discharge (ESD) one real life event: Physical impact and protection challenges in advanced CMOS technologies | |
Meneghesso et al. | ESD robustness of smart-power protection structures evaluated by means of HBM and TLP tests | |
CN202872672U (en) | Off-line low-voltage DC output circuit and its chip | |
Chen et al. | Unexpected failure during HBM ESD stress in nanometer-scale nLDMOS-SCR devices | |
CN101882612B (en) | Electrostatic protection device | |
CN103383938A (en) | Groove type power metal oxide semiconductor (MOS) device contact hole resistance detection structure | |
CN102437563A (en) | Single-power circuit and multi-power circuit | |
CN203205856U (en) | Electrostatic protection circuit and battery protection circuit thereof | |
CN104681460A (en) | Testing method and testing structure for ion injection and semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111201 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111201 Address after: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091216 Termination date: 20181107 |
|
CF01 | Termination of patent right due to non-payment of annual fee |