CN100567564C - Method and apparatus for forming a high quality low temperature silicon nitride layer - Google Patents

Method and apparatus for forming a high quality low temperature silicon nitride layer Download PDF

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CN100567564C
CN100567564C CN 200380107849 CN200380107849A CN100567564C CN 100567564 C CN100567564 C CN 100567564C CN 200380107849 CN200380107849 CN 200380107849 CN 200380107849 A CN200380107849 A CN 200380107849A CN 100567564 C CN100567564 C CN 100567564C
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silicon
silicon nitride
nitride layer
source gas
hydrogen
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CN1732288A (en
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A·(史蒂文)·陈
E·A·C·桑柴兹
S·王
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应用材料有限公司
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Abstract

本发明描述了形成氮化硅层的方法。 The present invention describes a method of forming a silicon nitride layer. 根据本发明,通过在低沉积温度下(例如,小于550℃)热分解含硅/氮源气体,或含硅源气体和含氮源气体形成氮化硅层。 According to the present invention, at low deposition temperatures (e.g., less than 550 deg.] C) thermal decomposition of a silicon / nitrogen source gas or a silicon containing source gas and a nitrogen containing source gas is formed a silicon nitride layer. 该热沉积氮化硅层然后用氢自由基处理,以形成处理过的氮化硅层。 The thermally deposited silicon nitride layer is then treated with hydrogen radicals to form a treated silicon nitride layer.

Description

形成高质量的低温氮化硅层的方法和设备 Forming a high quality low temperature silicon nitride layer method and apparatus

发明背景 BACKGROUND OF THE INVENTION

本发明关于薄层形成领域,更具体地,本发明关于形成氮化硅层的方法和设备。 The present invention relates to the field of thin layer formation and more particularly, the present invention relates to a method and apparatus for forming a silicon nitride layer.

相关技术讨论 Discussion of Related Art

现代集成电路由数百上千万个集成到功能电路中的晶体管组成。 Modern integrated circuits are integrated by the hundreds to tens of millions of transistors of the functional circuit. 为了进一步提高集成电路的计算能力和储存容量,晶体管特征尺寸, 诸如栅长和栅氧化膜厚度必须进一步按比例縮小。 To further improve storage capacity and computing power of an integrated circuit, transistor feature size such as gate length and gate oxide thickness must be further scaled down. 但是,随着晶体管栅长被不断按比例缩小,晶体管的电特性和性能由于器件中掺杂物的热再分布的缘故而会大大改变。 However, with the transistor gate length is scaled down continuously, and the electrical characteristics of the transistor due to the thermal properties thereof redistribution device may significantly alter the doping. 同样地,随着器件被进一步按比例縮 Similarly, as the device is further reduced proportionally

小,用于制造集成电路的热平衡(themialbudget),艮P,来自沉积和工艺温度的单个工序的和累积的热输入,也必须被减少,以确保器件的一致和可靠的电性能。 Small, heat balance for the manufacture of integrated circuits (themialbudget), Gen P, and a single step process from the deposition temperature and cumulative heat input must be reduced to ensure consistent and reliable device electrical performance. 此外,为了进一步按比例縮小半导体器件,用于制造器件的薄层必须形成具有高度的组分和厚度一致性。 Further, in order to further scaled semiconductor device, a thin layer to be formed for manufacturing a device component and a high degree of thickness uniformity.

一种用于形成晶体管的材料是氮化硅。 A material for forming a transistor is silicon nitride. 氮化硅薄层传统上在半导体制造工艺中通过热化学气相沉积(CVD)沉积而得。 Depositing a thin layer of silicon nitride is obtained through a conventional thermal chemical vapor deposition (CVD) in semiconductor manufacturing processes. 例如,氮化硅层被用作间隔层(spacer layers)、蚀刻阻挡(etch stops)、以及电容器和层间绝缘物(interlayer dielectrics)。 For example, a silicon nitride layer is used as the spacer layers (spacer layers), an etching stopper (etch stops), and an inter-layer insulator and the capacitor (interlayer dielectrics). 然而,目前利用热化学气相沉积在单晶片反应器上形成高质量的氮化硅层的技术,需要高于750'C的高沉积温度,和/或在降低的温度下具有降低的沉积速度,并且对于晶体管制造,可能导致不可评估的氮化硅沉积。 However, using the thermal chemical vapor deposition is formed on a single wafer reactor technology of high-quality silicon nitride layer, needs to be above the high deposition temperature of 750'C, and / or have reduced deposition rate at a reduced temperature, and for transistor fabrication, the silicon nitride deposition may result in unmeasurable.

此外,当氮化硅层用目前的工艺和前体(precursor)在减低的温度下,或以高沉积速度沉积时,层的质量一般低于所期望的。 Further, when the silicon nitride layer at reduced temperatures or at high deposition rate deposition of a current process and precursor (precursor), mass layer is generally less than desirable. 如目前包括硅烷、二氯硅烷、乙硅烷、二-四丁基氨基硅烷(BTBAS)、和六氯乙硅垸的氮化硅前体生产出了低于期望的层质量的层,诸如低密度和高氢含量。 As presently include silane, dichlorosilane, disilane, di - tetrabutylammonium nitride aminosilane (the BTBAS), and hexachlorodisilane embankment silicon precursor to produce a layer below a desired quality level, such as low density and high hydrogen content. 乙硅烷和六氯乙硅烷具有弱的Si-Si键,这使获得可接受的沉 Disilane and hexachlorodisilane have weak Si-Si bonds, so that to obtain acceptable Shen

积速度成为可能,但是当与氮源如氨一起使用时,它们或者导致不良膜质量(低密度和高氢含量,不良台阶覆盖和微负载,对乙硅烷来说), 或导致几乎难以控制的颗粒形成现象(对于六氯乙硅烷来说)。 Deposition rate possible, but when used with a nitrogen source such as ammonia, or they result in poor film quality (low density and high hydrogen content, a poor step coverage and microloading for disilane for), resulting in hardly or control particle formation phenomena (for hexachlorodisilane speaking).

因此,需要一种在降低的沉积温度下、在可制造的沉积速率下, Therefore, a decrease in deposition temperature, the deposition rate at a manufacturable,

利用热化学气相沉积(CVD)来形成高质量的氮化硅层的方法。 The method of forming a high quality silicon nitride layer by thermal chemical vapor deposition (CVD). 发明概述 SUMMARY OF THE INVENTION

本发明一般关于形成晶体管介电层(dielectric layer),诸如氮化硅层的方法。 The present invention relates generally to transistors forming a dielectric layer (dielectric layer), a method such as a silicon nitride layer. 根据本发明,通过在减低的沉积温度下热分解含硅/氮的源气体或含硅源气体和含氮源气体来形成氮化硅层。 According to the present invention, by forming a silicon nitride layer at a deposition temperature of the thermal decomposition of a silicon-containing reducing / source gas and a nitrogen containing source gas or a silicon containing source gas of nitrogen. 该前体包括具有Si-N键、Si-Cl键或两种键的化合物。 The precursor comprises a Si-N bond, Si-Cl bond compound or both bond. 该热沉积氮化硅层然后暴露于氢自由基,以形成处理过的氮化硅层。 The thermally deposited silicon nitride layer is then exposed to hydrogen radicals to form a treated silicon nitride layer. 具有一个或多个Si-Si、 NN或N=N 键的前体被用于在减低的温度下沉积该氮化硅层。 Having one or more Si-Si, silicon nitride layer precursor NN or N = N bond is used for the deposition under reduced temperature.

在本发明的一个方面,提供了加工衬底的方法,其包括将衬底加热到550'C或低于55(TC的温度;热分解含硅和氮的源气体或含硅源气体和含氮源气体,以在衬底表面上沉积氮化硅层,并将该氮化硅层暴露于氢自由基。 In one aspect of the present invention, there is provided a method of processing a substrate, comprising heating the substrate to 550'C or less than 55 (TC temperature; thermal decomposition of silicon and nitrogen containing source gas or a silicon containing source gas and nitrogen source gas to deposit a silicon nitride layer on the surface of the substrate, and the silicon nitride layer exposed to hydrogen radicals.

在本发明的另一个方面,提供了形成氮化硅层的方法,其包括在低于55(TC的温度下,以高于100A/分钟的沉积速率,通过热分解含硅和氮的源气体或含硅源气体和含氮源气体来沉积氮化硅层得到低于150A的厚度,将所沉积的氮化硅层暴露于氢自由基,该氢自由基通过含氢气体的等离子体分解而形成。 In another aspect of the present invention, there is provided a method of forming a silicon nitride layer, which comprises (a temperature TC is less than 55, higher than the deposition rate of 100A / minute, by thermal decomposition of a silicon and nitrogen source gas or a silicon containing source gas and a nitrogen containing source gas to deposit a silicon nitride layer having a thickness of less than 150A, the deposited silicon nitride layer exposed to hydrogen radicals, the hydrogen radical by plasma decomposition of a hydrogen containing gas form.

在本发明的另一个方面,提供了形成氮化硅层的方法,其包括: 通过热分解含硅和氮的源气体或含硅源气体和含氮源气体来沉积氮化硅层,其中,该含硅源气体和含硅和氮的源气体包括氯和碳,并用氢自由基处理沉积的氮化硅层以形成处理过的氮化硅层,该氢自由基通过等离子体分解含氢气体而形成。 In another aspect of the present invention, there is provided a method of forming a silicon nitride layer, comprising: depositing a silicon nitride layer by thermally decomposing a silicon and nitrogen containing source gas or a silicon containing source gas and a nitrogen source gas, wherein, the silicon containing source gas and a silicon and nitrogen containing source gas includes chlorine and carbon and that the radical treatment silicon nitride layer deposited with hydrogen to form a treated silicon nitride layer, the hydrogen radical containing gas by plasma decomposition form.

在本发明的另一个方面,提供了形成氮化硅层的方法,其包括: 通过热分解含硅和氮的源气体或含硅源气体和含氮源气体来沉积氮化硅层,其中沉积氮化硅层之后,该氮化硅层具有的氢浓度高于15at,X (原子百分比),碳浓度高于10 at%;并用氢自由基处理所沉积的氮化硅层,直到氮化硅层的氢浓度小于10at.。 In another aspect of the present invention, there is provided a method of forming a silicon nitride layer, comprising: depositing a silicon nitride layer by thermally decomposing a silicon and nitrogen containing source gas or a silicon containing source gas and a nitrogen source gas, wherein the deposition after the silicon nitride layer, the silicon nitride layer has a hydrogen concentration higher than 15at, X (atomic percent), a carbon concentration greater than 10 at%; and treated with hydrogen radical treatment silicon nitride deposited layer until the silicon nitride the hydrogen concentration layer is less than 10at .. /。 /. ,碳浓度小于5at.0/0。 , A carbon concentration of less than 5at.0 / 0.

在本发明的另一个方面,提供了用于形成氮化硅层的设备,其包括位于室中的衬底支架,其用于保持衬底;加热器,其用于加热置于衬底支架上的衬底;进气口,其用于将工艺气体混合物提供到室中, 该工艺气体混合物包括硅源气体和氮源气体,和/或硅/氮源气体;用于由含氢气体产生氢自由基的装置;和处理器/控制器,其用于控制设备的操作,其中,该处理器/控制器包括存储器,该存储器具有许多指令, 这些指令为将置于衬底支架上的衬底加热到低于55(TC的温度的指令, 和在加热衬底的同时,将含硅源气体和含氮源气体或含硅和氮源气体提供到室中,以在衬底上形成氮化硅层的指令,以及控制用于产生氢自由基的装置的指令,所述氢自由基用于用氢自由基处理氮化硅层。 In another aspect of the present invention, there is provided an apparatus for forming a silicon nitride layer, which comprises a chamber a substrate holder for holding a substrate; a heater for heating a substrate placed on the holder a substrate; an intake port for the gas mixture supplied to the process chamber, the process gas mixture comprising a silicon source gas and nitrogen source gas, and / or a silicon / nitrogen source gas; means for generating hydrogen by the hydrogen-containing gas radical means; and a processor / controller for controlling the operation device, wherein the processor / controller includes a memory having a plurality of instructions which is placed on the substrate holder of the substrate was heated to less than 55 (the temperature TC of the instruction, and at the same time heating the substrate, the silicon containing source gas and a nitrogen containing source gas or the silicon and nitrogen source gas into the chamber to form a nitride on the substrate instruction silicon layer, and a control instruction means for generating hydrogen radicals, hydrogen radicals for treating the silicon nitride layer with hydrogen radicals.

附图简述 BRIEF DESCRIPTION

图1是流程图,示出了形成氮化硅层的方法的一种实施方案。 1 is a flowchart illustrating an embodiment of a method of forming a silicon nitride layer. 图2是流程图,示出了形成氮化硅层的方法的一种实施方案。 FIG 2 is a flowchart illustrating an embodiment of a method of forming a silicon nitride layer. 图3A-3C是由氮化硅层形成具有侧壁间隔物(sidewall spacers)的半导体器件的方法的一种实施方案的横截面示意图。 Cross-section of one embodiment of the method of FIGS. 3A-3C are formed of silicon nitride layer of a semiconductor device having a sidewall spacer (sidewall spacers) of FIG.

图4是能用于形成氮化硅层的设备的一种实施方案的剖视示意图。 FIG 4 is a schematic sectional view of a can of one embodiment of apparatus for forming a silicon nitride layer.

图5是能用于形成氮化硅层的群集工具的一种实施方案的俯视图。 FIG 5 is a plan view can be used to form one embodiment of a cluster tool of the silicon nitride layer.

发明详述本发明关于形成高质量的氮化硅层,其能在降低的或低沉积温度下形成。 DETAILED DESCRIPTION formed on the silicon nitride layer of the present invention is of high quality, which can be formed at reduced deposition temperature or lower. 在下述描述中,无数具体细节,诸如沉积和退火设备被阐述, 以提供对本发明的全面理解。 In the following description, numerous specific details, such as deposition and anneal equipment are set forth to provide a thorough understanding of the present invention. 然而,本领域普通技术人员将认识到没有这些具体细节,本发明也可实施。 However, one of ordinary skill in the art will recognize that without these specific details, the present invention may be practiced. 在其他例子中,没有详细描述公知的半导体加工工艺,以避免使得本发明不清晰。 In other instances, there is no detailed description of known semiconductor process, so that the present invention is to avoid unclear.

本发明提供了形成高质量氮化硅层的方法和装置,所述氮化硅层 The present invention provides a method and apparatus for forming a high quality silicon nitride layer, the silicon nitride layer

在低于550'C的低沉积温度下,通过热化学气相沉积(CVD)形成。 At a low deposition temperature of less than 550'C, and is formed by a thermal chemical vapor deposition (CVD). 沉积氮化硅层的方法的示例在图1的流程图中进行了一般性的说明。 Exemplary method of depositing a silicon nitride layer is generally described in the flowchart of FIG. 1. 根据本发明的第一步,如图1方框102中描述,工艺气体混合物在室中, 在低于或等于550'C,如小于约50(TC的沉积温度(衬底温度)下,被热处理,以产生硅物质和氮物质,由它们沉积得到氮化硅层,其中, 气体混合物包括含硅和氮源气体,或含硅源气体和含氮源气体。选择该源气体或这些源气体以使得氮化硅层能够在低于或等于550'C的低沉积温度(即衬底或晶片(wafer)温度)下,以至少50A/分钟,理想地至少100A/分钟的沉积速率,通过热化学气相沉积而形成。 The first step of the present invention, as described in block 1 102, the process gas mixture in the chamber, at 550'C, such as less than about 50 (less than or equal to the TC of the deposition temperature (substrate temperature) is heat treatment to produce silicon species and nitrogen species, are obtained by the deposition of a silicon nitride layer, wherein the gas mixture comprises a silicon and nitrogen source gas or a silicon containing source gas and a nitrogen containing source gas. these select the source gas or the source gas so that the silicon nitride layer can be less than or equal to the low deposition temperature (i.e., a substrate or wafer (the wafer) temperature) 550'C under at least 50A / min, desirably at least a deposition rate of 100A / minute by thermal formed by chemical vapor deposition.

前体(precursor) Precursor (precursor)

能用于以足够高的沉积速率,在低温下,通过热化学气相沉积产生氮化硅层的源气体包括具有一种或多种Si-N键或Si-Cl键的化合物, 诸如二-四丁基氨基硅烷(tertbutylaminosilane) (BTBAS)或六氯乙硅烷(hexachlorodisilane) (HCD或Si2Cl6)。 Can be used at a sufficiently high deposition rates at low temperatures, to produce silicon nitride layer by thermal chemical vapor deposition source gas includes one or more Si-N bonds or a compound having Si-Cl bonds, such as two - four butylamino silane (tertbutylaminosilane) (BTBAS) or hexachlorodisilane (hexachlorodisilane) (HCD or Si2Cl6). 在前体中还包括Si-Si键、 NN键、NN键,优选Si-N和Si-Cl键或其组合。 The precursor further comprising a Si-Si bond, bond NN, NN bond, preferably Si-N and Si-Cl bonds, or combinations thereof.

己经观察到Si-Cl官能团(键)和Si-N官能团(键)的组合改善台阶覆盖和微负载(microloading),尤其对于在合适的沉积速度下的不断降低的温度的情况下。 We have observed that Si-Cl functional group (bond) and a combination of Si-N functional group (bond) improved step coverage and microloading (microloading), in particular at the temperature continues to decrease at a suitable deposition rate case. Si-Cl基团的数目能相对于Si-N基团的数目而变化。 The number of Si-Cl groups with respect to the number of Si-N groups varies. Si-Cl和SN键看来对层特性和沉积特性具有不同的影响,且Si-N与S-C1键的比例能用于平衡层特性和沉积特性。 SN and Si-Cl bonds appeared to have different effects on layer properties and deposition properties, and the Si-N bond ratio of S-C1 can be used to balance layer properties and deposition characteristics. 具有上述优选的键结构的化合物具有通用结构: Preferred compounds having the above-described key structure having the general structure:

(I) NRrSi(R'2)-Si(R'2)-NR2,(氨基(二)硅烷); (I) NRrSi (R'2) -Si (R'2) -NR2, (amino (ii) silane);

(II) R3-Si-N=N=N,(甲基硅烷叠氮化合物),或 (II) R3-Si-N = N = N, (trimethylsilyl azide), or

(III) R'3-Si-NR-NR2 (甲基硅烷肼)。 (III) R'3-Si-NR-NR2 (methylsilane hydrazine).

在上述通用结构中,R和R,包括一个或多个官能团,官能团选自卤素、具有一个和多个双键的有机基团、具有一个和多个三键的有机基团、脂族垸基基团、环垸基基团、芳香基、有机硅基团、烷基氨基基团、含有N或Si的环状基团及其组合。 In the above generic structures, R and R, include one or more functional groups, a functional group selected from halogen, an organic group having a plurality of double bonds and having a plurality of triple bonds and organic group, aliphatic alkyl with groups, cycloalkyl embankment group, an aromatic group, an organosilicon group, an alkylamino group, N-containing cyclic group, or Si, and combinations thereof.

合适的官能团的例子包括氯(Cl-)、甲基异丙基、三甲代甲硅烷基、吡咯烷及其组合括: Examples of suitable functional groups include chloro (of Cl-), methyl isopropyl group, trimethylsilyl group, pyrrolidine, and combinations thereof comprising:

1, 2-二乙基-四(二乙基氨基)乙硅烷, 1,2-二氯-四(二乙基氨基)乙硅垸, 六(N-吡咯烷基)乙硅烷, 1,1,2,2-四氯-二(二-三甲基氨基)乙硅烷, l,l, 2,2-四氯-二(二-异丙基)乙硅烷, 1,2-二甲基-四(二乙基氨基)乙硅垸, 三(二甲基氨基)硅烷叠氮化合物, 三甲基氨基硅烷叠氮化合物, (2,2二甲肼)二甲基硅烷及其组合。 1, 2-diethylamino - tetrakis (diethylamino) disilane, 1,2-dichloro - tetrakis (diethylamino) ethyl embankment silicon, six (N- pyrrolidino) disilane, 1,1 , tetrachloro 2,2 - bis (di - trimethylamino) disilane, l, l, 2,2- tetrachloro - bis (di - isopropyl) disilane, 1,2-dimethyl - tetrakis (diethylamino) ethyl embankment silicon, tris (dimethylamino) silane azide, trimethylamino silane azide, (2,2 dimethylhydrazine) dimethylsilane, and combinations thereof.

(-CH3)、乙基(-CH2CH3)、 。 (-CH3), ethyl (-CH2CH3),. 合适的化合物的例子包 Examples of suitable compounds of the package

(CH2CH3(NCH2CH3)2Si)2 (CH2CH3 (NCH2CH3) 2Si) 2

(Cl(NCH2CH3)2Si)2 (Cl (NCH2CH3) 2Si) 2

((C4H9N)3)Si)2 ((C4H9N) 3) Si) 2

(Cl2(NSi(CH3)3))Si)2 (Cl2 (NSi (CH3) 3)) Si) 2

(Cl2(N(C3H7)2))Si)2 (Cl2 (N (C3H7) 2)) Si) 2

(CH3(NCH2CH3)2Si)2 (CH3 (NCH2CH3) 2Si) 2

(N(CH3)2)、 3SIN3 (N (CH3) 2), 3SIN3

(CH3)3SIN3 (CH3) 3SIN3

(CH3)2SIH-NH-N (CH3)2 (CH3) 2SIH-NH-N (CH3) 2

相信具有硅-硅单键(即Si-Si单键)的硅源气体(前体)或硅和氮源气体(前体)能使分子在降低的温度下,诸如约55(TC或较低的温度下分解或解离。 Believed that having a silicon - silicon source gas (precursor) silicon single bond (i.e., Si-Si single bond) or the silicon and nitrogen source gas (precursor) molecule can at a reduced temperature, such as about 55 (TC or lower dissociation or decomposition at a temperature.

能用于沉积包含硅和氮的层的氮源气体或前体包括,但不局限于氨(NH3)、肼(N2H4)、氢叠氮化合物HN3或其组合。 Can be used for depositing a layer comprising silicon and nitrogen source gas or the nitrogen precursors include, but are not limited to, ammonia (NH3), hydrazine (of N2H4), hydrogen azide HN3, or a combination thereof. 理想地,氮源气体包含氮-氮单键(即NN单键),用于在低温下氮源气体的分解。 Desirably, the nitrogen source gas comprises nitrogen - nitrogen single bond (i.e., NN single bond) for decomposition of the nitrogen source gas at low temperatures. 此外,当含硅和氮源气体被用于工艺气体混合物时, 一定数量的氮源气体通常也可以包括在气体混合物中,以在层沉积期间灵活控制沉积层的组分。 Further, when the silicon and nitrogen source gas when a gas mixture is used in the process, a certain amount of nitrogen gas typically also be included in the gas mixture, to flexible control component deposited layer during layer deposition.

合适的硅源气体,或硅和氮源气体化合物可以被调整,以最小化 Suitable silicon source gas or the silicon and nitrogen source gas compounds may be adjusted to minimize

层中的碳和氢的含量。 Layer in an amount of carbon and hydrogen. 在这方面,Si-C键、Si-H键和NH键在前体键组分中被最小化。 In this respect, Si-C bonds, Si-H and NH bonds are minimized key components in the front body.

使用工程化前体(engineered precursor)的SiNCVD方法将在此被描述。 Using the engineered precursors (engineered precursor) SiNCVD the method will be described herein. CVD过程也需要加入一些,但是少量的NH3,以使SiN层可化学计量。 CVD processes also need to add some, but a small amount of NH3, so that the SiN layer stoichiometric. 因为Si和N掺入到层中的效率是不同的(不同的动力学壁垒),这依然需要从前体输送氮。 Because the Si and N is incorporated into a layer different efficiencies (different kinetic barriers), which still require delivery of nitrogen from the precursor. 化学计量的氮化硅层将包含<10%的C, 尽管可能还有>10%的H,这取决于温度和R基团的选择。 Stoichiometric silicon nitride layer comprising <10% of C, although there may be> 10% H, depending on the temperature and the R group. 可以利用可能的进一步的后处理来降低H的百分含量,如在另一个专利中所述的。 May be utilized to further post-processing to reduce the percentage of H, as described in other patents. 对于利用氨基乙硅烷(aminodisilane)前体的氧化物和氮氧化物的沉积, 需要加入氧化剂,诸如>}20。 For use propylaminodisilane (aminodisilane) and nitrogen oxides deposition precursors, added oxidants, such as> 20}.

依据本发明的实施方案,在单个晶片反应器中沉积和处理氮化硅层的方法的例子见图2的流程图200。 Examples of embodiments according to the present invention, and a method of depositing a silicon nitride layer in a single wafer processing reactor flowchart 200 in Figure 2. 第一步是通过热化学气相沉积将氮化硅层沉积到晶片或衬底上。 The first step is by thermal chemical vapor deposition silicon nitride layer is deposited onto the wafer or substrate. 氮化硅沉积过程的特定示例阐述于图2 中,如流程图200的方框201,并能包括流程图200的步骤202-210。 Specific examples of the silicon nitride deposition process set forth in FIG. 2, block 201 as described in Scheme 200, and can include steps of flowchart 200 202-210. 沉积氮化硅层的第一步是将晶片或衬底放入室中。 The first step in depositing a silicon nitride layer is a wafer or substrate into the chamber. 理想地,该氮化硅层在减压单晶片冷壁反应器的室中形成,该室具有用于加热晶片的电阻加热的衬底支架,诸如应用材料有限公司生产的XgenChamber。 Desirably, the silicon nitride layer in a reduced pressure single wafer cold wall reactor chamber is formed, the chamber having a substrate support for heating the wafer resistive heating, XgenChamber such as Applied Materials production. 合适的室的示例显示并图解于图4中。 Suitable example of the display chamber 4 and illustrated in FIG.

一旦衬底被置于室中,便获得用于沉积氮化硅层的沉积压力和温度。 Once the substrate is placed in the chamber, the deposition pressure and temperature will be obtained for the deposited silicon nitride layer. 在本发明的实施方案中,沉积氮化硅层的沉积压力在约10托至约350托之间。 Deposition pressure is in the embodiment of the invention, the deposited silicon nitride layer is between about 10 Torr to about 350 Torr. 沉积温度(即晶片或衬底的温度)将依据用于沉积氮化硅层的具体的工艺气体(如含硅源气体和含氮源气体)而定。 Deposition temperature (i.e., temperature of the wafer or substrate) will be dependent upon the specific process gases (e.g., silicon containing source gas and a nitrogen containing source gas) for depositing the silicon nitride layer. 在沉积过程中,晶片或衬底温度低于或等于约55(TC,诸如低于50(TC,并一般在约45(TC至约55(TC之间。 In the deposition process, the wafer or substrate temperature is less than or equal to about 55 (the TC, such as below 50 (TC, and typically at about 45 (TC to about 55 (between the TC.

接下来,如方框206所述,工艺气体被引入到沉积室内。 Next, as the block 206, the process gas is introduced into the deposition chamber. 该工艺气体混合物将至少包括含硅源气体(即,能被分解以提供用于沉积氮化硅层的硅原子或含硅的中间物质的气体),和含氮源气体(即能被热分解以提供用于沉积氮化硅层的氮原子或含氮中间物质的气体),如本文所述。 The process gas mixture comprising at least a silicon containing source gas (i.e., gas can be decomposed intermediate species for the deposition to provide silicon atoms or silicon-containing silicon nitride layer), and nitrogen containing source gas (i.e., be thermally decomposed to provide gaseous nitrogen for a nitrogen atom or the intermediate substance deposited silicon nitride layer) as described herein. 可替代地,工艺气体混合物可以包括硅/氮源气体,其由单个分子提供氮和硅原子和含氮和硅的中间物质,以形成氮化硅层。 Alternatively, the process gas mixture may include a silicon / nitrogen source gas which provides a nitrogen atom and a silicon and nitrogen containing intermediate species by a single molecule, and silicon to form a silicon nitride layer.

当使用硅和氮源气体时,工艺气体混合物也可以包括氮源气体和/ 或硅源气体,或可以只包括硅/氮源气体,而不加入氮和硅源。 When silicon and nitrogen source gas, the process gas mixture may also include a nitrogen source gas and / or a silicon source gas or may include just the silicon / nitrogen source gas, silicon source and without the addition of nitrogen. 在本发明的一个实施方案中,在提供硅源气体于室中之前,氮源气体被提供入室中。 In one embodiment of the present invention, the silicon source gas in the chamber before, the nitrogen source gas is provided into the chamber. 可替代地,惰性载气,诸如惰性气体,包括氦和氩,以及氮(N》 可以被引入到反应室中。硅源气体和氮源气体可以以1:1和约1:1000 之间的流速比,如约1:1和约1:500之间,引入所述加工室。 Alternatively, the inert carrier gas, such as inert gases, including helium and argon, and nitrogen (N "may be introduced into the reaction chamber a silicon source gas and nitrogen source gas may be 1: flow rate between 1000: 1 and about 1 ratio, such as about 1: 1 and about 1: 500 between, is introduced into the processing chamber.

在本发明的实施方案中,硅源气体是六氯乙硅烷(HCD)。 In an embodiment of the present invention, the silicon source gas is hexachlorodisilane (HCD). 氮化硅可以通过提供HCD和NH3或N2H4于室中而形成。 Silicon nitride in the chamber can be formed by providing HCD and NH3 or N2H4. 如果使用HCD, 其可以在被引入反应室之前,与惰性载气,诸如N2混和。 If the HCD, which can be introduced into the reaction chamber before, with an inert carrier gas, such as N2 mixture. HCD以10-200 sccm之间的速率被提供到反应室中,而氮源气体以500-5000 sccm之间的速率被提供于反应室。 HCD is provided at a rate between 10-200 sccm into the reaction chamber, while nitrogen gas at a rate between 500-5000 sccm is supplied to the reaction chamber. 在一个示例中,HCD源气体和氮源气体分别具有1:1和l: 1000的流速比,理想地,具有l:l和1:500之间的流速比。 In one example, the HCD source gas and nitrogen source gas respectively have 1: 1 and L: flow rate ratio, desirably 1000 having L: the flow rate ratio between 500: l and 1. 该过程能以大约80A/分钟的沉积速率,53(TC的晶片温度,和以大约50A/分钟的沉积速率,48(TC的晶片温度,形成氮化硅层。 This process can be at a deposition rate of about 80A / min, 53 (TC wafer temperature, and at a deposition rate of about 50A / min, 48 (TC wafer temperature, a silicon nitride layer.

利用流速为10-100 sccm之间的1,2-二氯,(二乙基氨基)乙硅烷, 和流速为200-2000 sccm之间的氮源气体可以形成合适的氮化硅层。 1,2-dichloro-use flow rate between 10-100 sccm, (diethylamino) disilane, nitrogen source gas and a flow rate between 200-2000 sccm suitable silicon nitride layer can be formed. 由1,2-二乙基-四(二乙基氨基)乙硅烷,以10-100 sccm之间的流速,和氮源气体,以200-2000 sccm之间的流速,可以沉积得到合适的氮化硅层。 From 1,2-diethyl - tetrakis (diethylamino) disilane at a flow rate, and a nitrogen source gas between 10-100 sccm, a flow rate between 200-2000 sccm, may be deposited to obtain suitable nitrogen silicon layer. 该工艺能以约80A/分钟的沉积速度,在530'C的晶片温度,和以约50A/ 分钟的沉积速度,在48(TC的晶片温度,形成氮化硅层。下述进一步的示例是在单晶片低压热CVD设备,诸如应用材料有限公司生产的SiNgen中的详细的工艺参数,优选以l,2-二氯-四(二乙基氨基)乙硅烷为前体,并包括衬底温度在450'C和约65(TC之间,诸如500'C;室压在约IO托和约300托之间,诸如约40托和约200托之间;NH3与硅前体的流量比(an NH3 to silicon precursor flow ratio)大于10,诸如在约50和约100之间;硅前体的流速在约0.2和约1.0 gms/分钟之间, 诸如0.5gms;加热器和喷头之间间距约500密耳和约1000密耳之间, 这可能导致沉积速率在60和200A/分钟之间,例如约100A/分钟。 The process can deposition rate of about 80A / min, the wafer temperature at 530'C, and at a deposition rate of about 50A / min at a wafer temperature 48 (TC, and a silicon nitride layer. The following example is further in a single wafer low pressure thermal CVD apparatus, such as the detailed parameters of applied materials Co., Ltd. is SiNgen, preferably l, 2- dichloro - tetrakis (diethylamino) disilane precursor, substrate temperature and comprising 450'C in about 65 (between TC, such 500'C; chamber pressure of between about 300 Torr and about IO Torr, such as about 40 Torr and about 200 Torr; NH3 flow rate ratio of the silicon precursor (an NH3 to silicon precursor flow ratio) is greater than 10, such as between about 50 and about 100; flow rate of the silicon precursor is between about 0.2 and about 1.0 gms / min, such as 0.5gms; spacing between the heater and the head of about 500 mils and about 1000 between mils, which may result in a deposition rate between 60 and 200A / min, e.g. about 100A / min.

作为比较,下面是在批次处理炉(batch fiimaces)中的SiN CVD 过程的详细描述,再次优选前体1, 2-二氯-四(二乙基氨萄乙硅烷,并包括450'C和约650'C之间的衬底温度,诸如约50(TC;约0.1托和约2托之间的室压,诸如约0.4托和约1托之间;NH3与硅前体的流量比小于IO,诸如在约1和约5之间,硅前体流速取决于炉管容量,其能产生在5和20A/分钟之间的沉积速率,例如约12 A/分钟。 As a comparison, a batch process in the following detailed description of SiN CVD furnace process (batch fiimaces) in front again preferably 1,2-dichloro body - tetrakis (diethylamino grapes disilane, and comprising about 450'C a substrate temperature between 650'C, such as about 50 (TC; between about 0.1 Torr and about 2 Torr chamber pressure, such as about 1 Torr and about 0.4 Torr; NH3 flow rate of the silicon precursor and is less than the IO such as between about 1 and about 5, silicon precursor flow rate depends on the capacity of the furnace tubes, which can produce a deposition rate of between 5 and 20A / min, for example about 12 a / min.

接下来,如流程图200方框208中所述,来自加热的衬底或衬底支架的热,使得硅和氮源气体或硅源气体和氮源气体热分解。 Next, as in block 200 of the flowchart 208, the heat from the heated substrate or substrate holder, so that the silicon and nitrogen source gas or a silicon source gas and nitrogen source gas is thermally decomposed. 硅源气体的热分解提供硅原子或含硅中间物质。 Thermal decomposition of the silicon source gas provides silicon atoms or silicon containing intermediate species. 氮源气体的热分解提供氮原子或含氮中间物质。 Thermal decomposition of the nitrogen source gas provides nitrogen atoms or nitrogen containing intermediate species. 硅和氮源气体的热分解能提供硅原子或硅中间物质以及氮原子或含氮中间物质。 Silicon and nitrogen source gas thermally decomposed to provide silicon atoms or silicon intermediate species as well as nitrogen atoms or nitrogen containing intermediate species. 硅原子或含硅中间物质与氮原子或含氮中间物质反应,以在衬底表面上沉积氮化硅层。 A silicon atom or a silicon-containing or nitrogen containing intermediate species reacting the intermediate with the nitrogen atom, to deposit a silicon nitride layer on the substrate surface. 在本发明中,优选仅使用热能,诸如来自衬底的热或来自衬底支架的热,来热分解含硅/ 氮源气体或硅源气体和氮源气体,称其为无等离子体沉积工艺,而不使用另外的能源,如光子增强或等离子体增强。 In the present invention, preferably only thermal energy, such as heat from the substrate or heat from the substrate holder to the thermal decomposition of a silicon / nitrogen source gas or a silicon source gas and nitrogen source gas, called plasma deposition process without without using additional energy, photon enhancement or plasma enhancement. 在本发明的实施方案中,氮化硅层被沉积得到10至150A之间的厚度,优选厚度小于120A, 理想地,优选小于80A。 In an embodiment of the present invention, the silicon nitride layer is deposited to a thickness between 10 and 150A, preferably a thickness of less than 120A, desirably, preferably less than 80A. 如果需要较厚的层,可以使用二次、三次、 或其他多次沉积/氢自由基处理循环,以沉积更厚的层,这将在后面描述。 If a thicker layer, a second, third, or other multiple deposition / hydrogen radicals treatment cycles, to deposit a thicker layer, which will be described later.

在本发明的实施方案中,如方框210所述,沉积足够厚的氮化硅层之后,停止硅源气体和氮源气体的流动。 In an embodiment of the present invention, as described in block 210, after deposition of a sufficiently thick silicon nitride layer, stopping the flow of silicon source gas and nitrogen gas. 在本发明的实施方案中, In an embodiment of the present invention,

当氮化硅沉积完成后,衬底可任选地用氮源气体处理,如方框210所述。 After completion of the deposition of silicon nitride, the substrate may optionally be treated with a nitrogen source gas, as described in block 210. 只需要将氮源气体引入反应室约10秒钟。 To only nitrogen source gas into the reaction chamber for about 10 seconds. 在沉积步骤的最后,用氮源气体处理氮化硅层,这除去了衬底上未反应的硅位(silicon site)。 In the final deposition step, the silicon nitride layer is treated with nitrogen gas, which is removed bits silicon (silicon site) unreacted substrate. 该操作帮助增加了N/Si比例,并减少了氮化硅层中的氢(尤其是以Si-H 键形式的)。 This operation helps increase the N / Si ratio and reduce hydrogen in the silicon nitride layer (in particular in the form of Si-H bonds). 然而,根据本发明,要获得良好的氮化硅层,操作210并非是必须的。 However, according to the present invention, to obtain a good silicon nitride layer, operation 210 is not essential.

本发明中用于沉积氮化硅层的工艺气体混合物使得氮化硅层能通过热化学气相沉积,以至少50A/分钟的沉积速率,理想地,大于100A/ 分钟的沉积速度,在低于55(TC,理想地低于500。C的沉积温度下被沉积。 The process gas mixture used in the present invention such that the deposited silicon nitride layer the silicon nitride layer by thermal chemical vapor deposition, at a deposition rate of at least 50A / min, desirably, is greater than the deposition rate of 100A / minute, less than 55 (TC, ideally below is deposited at a deposition temperature of 500.C.

等离子体处理 Plasma treatment

沉积的氮化硅层用氢自由基处理一段预先设定的时间,以便改善层的质量。 Deposited silicon nitride layer treated with hydrogen radicals at preset time, to improve the quality of the layer. 氢自由基能通过等离子体分解含氢气体,诸如氨(NH3)和氢(H2)而形成,其或者在室内现场形成,或者在远程装置中形成并输送到该室。 Hydrogen radical by plasma decomposition of a hydrogen containing gas, ammonia (NH3) and hydrogen (H2) is formed such that the indoor scene or formed in, or delivered to the forming chamber and in the remote unit. 所沉积的氮化硅层可以用氢自由基以在5xl015个原子/cm2 至lxl017个原子/0112之间的流量被处理。 The deposited silicon nitride layer with hydrogen radicals to be traffic between 5xl015 atoms / cm2 to lxl017 atoms / 0112 is processed. 在氢自由基处理期间,该衬底被加热到在约45(TC和约60(TC之间的低温,并处于约IOO毫托和约5托之间的室压下。充分处理通常进行约15秒和约120秒之间。 During the hydrogen radical treatment the substrate is heated to mTorr and about 5 Torr chamber pressure between about 45 (TC about 60 (between the low-temperature TC, and at about IOO. Adequately process is usually carried out for about 15 seconds between about 120 seconds.

用于氢自由基处理的氢自由基可以以任何合适的方式产生。 Hydrogen radical for a hydrogen radical treatment can be produced in any suitable manner. 在本发明的实施方案中,氢自由基通过等离子体分解含氢气体而形成,该含氢气体能被分解以提供足够数量的氢自由基。 In an embodiment of the present invention, the hydrogen radicals are formed by plasma decomposition of a hydrogen containing gas, a hydrogen-containing gas which can be decomposed to provide a sufficient number of hydrogen radicals. 氢自由基包括所有种类的原子氢,包括高活性的中性原子氢、和带电氢离子(charged hydrogen ions)。 Hydrogen radicals include all kinds of atomic hydrogen including highly active neutral atomic hydrogen, and charged hydrogen ions (charged hydrogen ions). 合适的氢源气体包括氨(顺3)和氢气(&)。 Suitable hydrogen sources include ammonia gas (cis-3) and hydrogen (&). 在本发明的实施方案中,氢源气体包括NH3和H2的混合物。 In an embodiment of the present invention, the hydrogen source gas comprises a mixture of H2 and NH3. 在本发明的实施方案中,氢处理气体只包括NH3或只包括H2。 In an embodiment of the present invention, the hydrogen treatment gas includes only NH3 or only H2. 此外,在本发明的实施方案中,惰性气体,诸如&、 Ar或He能与氢处理气体一起被提供。 Further, in the embodiment of the present invention, an inert gas, such as &, Ar or He can be provided along with the hydrogen treatment gas. 使用微波或射频源,以200-2000瓦特之间的能量,含氢气体可以适当地被离解,以提供氢自由基。 Using a microwave or radio frequency source, at an energy between 200-2000 watts, the hydrogen-containing gas may suitably be dissociated to provide hydrogen radicals. 氢处理气体的等离子体分解可以现场完成,或利用远程等离子体。 The plasma decomposition of a hydrogen treatment gas can be completed on-site, or using a remote plasma. 在现场工艺中,等离子体和氢自由基在同一室内产生,该室中放置具有将被处理的氮化硅层的衬底。 In the field process, the plasma and hydrogen radicals are generated in the same chamber, the chamber having a substrate placed in the silicon nitride layer to be processed. 合适的等离子体室的例子包括电容性耦合PECVD或高密度等离子体HDP 室。 Examples of suitable plasma chamber includes a capacitively coupled PECVD or a high density plasma HDP chamber. 在远程等离子体处理中,氢自由基和等离子体在室内由微波产生, 该室是与放置具有将被处理的氮化硅层的衬底的室分开的室。 In a remote plasma treatment, the hydrogen radicals and plasma generated by the microwave chamber, the chamber is placed in a separate chamber having a substrate to be processed is a silicon nitride layer chamber. 在远程等离子体工艺中,等离子体和氢自由基在第一室(离解室或腔)中产生,然后通过管道由离解室流入到第二室,第二室含有待处理的具有氮化硅层的衬底。 In a remote plasma process, the plasma and hydrogen radicals are generated in the first chamber (dissociation chamber or cavity), followed by a dissociation chamber into the second chamber, the second chamber comprising a silicon nitride layer to be treated by the conduit substrate. 任何合适的远程等离子体发生器反应器(remote plasma generator reactor)都可以被使用,诸如,但不局限于Astex Astron、 应用材料有限公司的远程渗氮RPN(remote Plasma Nitridation)源、和应用材料有限公司的高级去除钝化层附加ASP (Advanced Strip Passivation Plus ) 室。 Any suitable remote plasma generator reactor (remote plasma generator reactor) can be used, such as, but not limited to Astex Astron, the remote nitriding limited RPN (remote Plasma Nitridation) Applied Materials, Inc. of sources, and Applied Materials senior removing the passivation layer additional ASP (advanced Strip passivation Plus) room.

在本发明的实施方案中,氢自由基通过"热线(hotwire)"或催化分解含氢气体,诸如氨(NH3)和氢气(H2)及其组合而形成。 In an embodiment of the present invention, the hydrogen radical by "hot line (Hotwire)" or catalytic decomposition of a hydrogen containing gas, ammonia (NH3) and hydrogen (H2), and combinations thereof such as are formed. 在"热线"工艺中,线和催化剂,诸如钨丝被加热到约1600-1800°C的高温,氢处理气体提供到钨丝上。 In the "hot" process, and catalyst lines, such as a tungsten filament is heated to a high temperature, hydrogen treat gas is about 1600-1800 ° C is supplied to the tungsten wire. 加热的钨丝使得氢处理气体裂解或分解,以形成氢自由基。 Such that the heated tungsten cleavage or decomposition of hydrogen treat gas to form hydrogen radicals. 氢自由基然后处理在位于钨丝下的衬底上形成的氮化硅层。 Hydrogen radical treatment silicon nitride layer is then formed on the substrate positioned under the tungsten wire. 尽管钨丝具有高温,然而衬底在处理期间依然只加热到低于600'C 的温度,优选低于55(TC的温度。在本发明的还有另一实施方案中,感应产生的等离子体可以被用于产生氢自由基。 Although tungsten has a high temperature, but still only the substrate is heated during processing to a temperature of less than 600'C, preferably lower than 55 (TC temperature. In yet another embodiment of the present invention, the induction plasma generated It may be used to generate hydrogen radicals.

因为通过低温操作,氢自由基能够渗入到氮化硅层的距离限制在约100A,如HCD膜,并且通常小于50A,如硅烷膜,所以在氢自由基处理之前,形成不超过150A的氮化硅层,优选不超过100A。 Because, by low temperature operation, the distance the hydrogen radicals can penetrate the silicon nitride layer is limited to about IOOA, such as HCD films, and typically less than 50A, such as a silane film, the hydrogen radical treatment before forming the nitride is not more than 150A silicon layer, preferably not more than 100A. 当想获得较厚的氮化硅层时,可以进行多次沉积和处理循环。 When you want to obtain thick silicon nitride layer, and the deposition process may be performed multiple cycles. 例如,如果想获得300A的氮化硅,首先可以沉积100A的氮化硅层,然后用氢自 For example, to obtain the silicon nitride 300A, 100A silicon nitride layer may be deposited first and then with hydrogen from

由基处理该氮化硅层。 The silicon nitride layer from the base treatment. 下一步,在处理过的氮化硅层上沉积第二层100A氮化硅层,然后用氢自由基处理第二层氮化硅层。 Next, a silicon nitride layer 100A of the second layer is deposited on the treated silicon nitride layer and a second layer radical treatment silicon nitride layer with hydrogen. 再下一步,在第二 The next step, in the second

层的氮化硅层上沉积第三层iooA的氮化硅层,然后用氢自由基处理 Depositing a silicon nitride layer of the third layer on the silicon nitride layer iooA layer is then treated with hydrogen radicals

它。 it. 这样,可以形成任何期望厚度的高质量的氮化硅层。 Thus, any desired thickness can be formed of a high quality silicon nitride layer. 例如,3循环的HCD的80A CVD,接着暴露于氢自由基8秒钟,显示3层处理过的100A和未处理的80A。 For example, 3 cycles of HCD 80A CVD, then exposed to hydrogen radicals 8 seconds, the layer 3 treated and untreated 100A 80A.

例如,氢自由基处理前氮化硅层可以具有大于15 at?/。 For example, prior to hydrogen radical treatment silicon nitride layer can have greater than 15 at? /. 的氢浓度, 其中Si-H形式键占重要部分;大于10at,o/。 Hydrogen concentration, wherein the Si-H bonds account for an important part of the form; greater than 10at, o /. 的碳浓度,如果使用有机硅前体的话;大于1站.%的氯浓度,如果使用氯化硅前体的话;小于1.85 的折射率;和相比起利用氧化蚀刻的氧化硅,如缓冲氧化蚀刻(BOE) 的蚀刻速率大2倍的湿蚀刻速率(wet etch rate)。 Carbon concentration, if silicone body before it; station is greater than 1% of the concentration of chlorine, if used prior to silicon chloride, then body; refractive index less than 1.85; and the use of silicon oxide compared to oxide etch, such as buffered oxide etch (BOE) of a large etching rate twice the rate of wet etching (wet etch rate). 此种氮化硅层可以认为不适合于半导体器件制造中的氮化硅层的许多应用,诸如间隔片或级间电介质(interpoly dielectrics )。 Such a nitride layer may be considered unsuitable for many applications of silicon nitride layers in semiconductor device fabrication, such as a spacer or inter-level dielectric (interpoly dielectrics).

已经观察到处理过的氮化硅层的总的氢浓度小于10at.%, Si-H形式减少,碳浓度例如小于5 at.%,氯浓度例如小于1 at.%,增加的折射率例如大于1.90,或降低的湿蚀刻速率例如大致与使用氧化蚀刻,诸如BOE的氧化硅的蚀刻速率(1:1)相同。 The total hydrogen concentration has been observed to the treated silicon nitride layer is less than 10at.%, Reduce Si-H forms, a carbon concentration, for example less than 5 at.%, For example, a chlorine concentration of less than 1 at.%, For example greater than a refractive index increasing For example substantially, such as 1.90, or a decreased wet etch rate and the oxide etch using an etch rate of silicon oxide BOE (1: 1).

本发明的工艺能使得高质量的氮化硅层在低沉积温度下,以可制造的高沉积速率(如大于50A/分钟),通过热化学气相沉积而形成。 The process of the invention enables a high quality silicon nitride layer at a low deposition temperature, can be produced at high deposition rates (e.g., greater than 50A / min), is formed by a thermal chemical vapor deposition. 低沉积温度能使氮化硅层在晶体管或有源器件形成后,被用于应用或放置中的半导体电路制造工艺中,这是因为沉积温度足够低,而不会显著地影响器件的热平衡或改变其中的掺杂物分布。 Low deposition temperature enables the silicon nitride layer is formed after transistor or active device, is placed for applying a semiconductor circuit manufacturing process or, because the deposition temperature is sufficiently low, without significantly affecting the heat balance of the device or wherein the dopant profile changes. 氮化硅层的高沉积速率使该工艺能在单个晶片反应器中完成。 High deposition rate silicon nitride layer so that the process can be completed in a single wafer reactor.

制造 Making

本发明形成氮化硅的方法,对于用于制造半导体器件是理想的方法,其需要低热平衡和/或防止置于硅衬底里的掺杂物的重新分布。 The method of forming the silicon nitride of the present invention, for manufacturing a semiconductor device is ideal for a method that requires low thermal balance and / or preventing the silicon substrate was placed in the dopant redistribution. 对于使用本发明的氮化硅层,一个示例在于制造侧壁间隔物(sklewallspacer)。 For a silicon nitride layer of the present invention, wherein an example of manufacturing sidewall spacers (sklewallspacer). 在该应用中,衬底,诸如显示于图3A中的衬底300,将被提供。 In this application, a substrate, such as substrate 300 shown in FIG. 3A, are provided. 该衬底300每括单晶体硅衬底或层302,其具有形成于其上的栅介电层304。 The single-crystal silicon substrate 300 each include substrate or layer 302 having a gate dielectric layer 304 formed thereon. 具有横向相对的侧壁(laterally opposite sidewalls)的栅电极(gate electrode) 306形成于栅介电层上。 A gate electrode (gate electrode) having laterally opposite sidewalls (laterally opposite sidewalls) 306 is formed on the gate dielectric layer. 通常,一对源/漏端(source/drain tip)或延伸区(extension regions) 310将形成于硅衬底302内,与栅电极306的横向相对侧壁连接。 Typically, a pair of source / drain terminal (source / drain tip) or extension (extension regions) 310 formed on the silicon substrate 302, is connected to the laterally opposed sidewalls of the gate electrode 306.

然后,如图3B所示,低温氮化硅层根据本发明的方法形成,将被覆盖沉积于图300的衬底上。 Then, as shown in FIG. 3B, the low temperature silicon nitride layer is formed according to the method of the present invention, it will be deposited on the substrate cover 300 in FIG. 氮化硅层312的厚度取决于要制造的晶体管的物理特性,对于65nm的技术器件来说,将一般至少为200A厚。 The thickness of the silicon nitride layer 312 depends on the physical characteristics of a transistor to be fabricated, for 65nm technology device, it will generally be at least 200A thick. 根据本发明,氮化硅层将按如上所述的方法,利用低沉积温度以高沉积速率被沉积而成。 According to the present invention, a silicon nitride layer will be the method described above, using a low deposition temperature at a high deposition rate is deposited by. 首先形成厚度为IOOA或更薄的氮化硅层,理想地小于50A。 First, having a thickness of IOOA or a thinner nitride layer, desirably less than 50A. 氮化硅层然后按照上述方法用氢自由基退火。 The silicon nitride layer is then annealed as described above with hydrogen radicals. 接下来,如果必要,第二层氮化硅层形成于氢自由基处理过的第一层氮化硅层上。 Next, if necessary, the second layer is a silicon nitride layer is formed on the hydrogen radical treated first silicon nitride layer layer. 第二层氮化硅层然后用氢自由基处理,如上所述。 The second layer of silicon nitride layer is then treated with hydrogen radicals as described above. 接下来,第三层氮化硅层通过低温化学气相沉积沉积而成,按照如上所述的方法。 Next, a third layer of deposited silicon nitride layer formed by low temperature chemical vapor deposition, according to the method as described above. 接下来,第三层氮化硅层按照如上所述的方法用氢自由基处理。 Next, a third layer of silicon nitride layer treated with hydrogen radicals according to the method described above. 该工艺按这种方式继续下去,直到具有想要的总厚度的氮化硅层312被形成。 The process continues in this manner until a silicon nitride layer having a desired total thickness of 312 is formed. 在某些用途实施方案中,在氮化硅层形成之前,形成沉积的或生长的二氧化硅层,其因此位于氮化硅层下面。 In certain embodiments, the use of, prior to forming the silicon nitride layer, forming silicon dioxide layer deposited or grown, which is thus positioned beneath the silicon nitride layer. 因为氮化硅层312在低温工艺下形成,并且在低温下用氢自由基处理,所以形成源/漏延伸310的掺杂剂在氮化硅期间没有被充分地移去,或在衬底302内被重新分布。 Because the silicon nitride layer 312 is formed at a low temperature process and is treated with hydrogen radicals at a low temperature, to form a source / drain extension dopant 310 is not sufficiently removed during a silicon nitride, or the substrate 302 redistributed within. 这样,制造器件的电特性将会是均匀一致的。 Thus, the electrical characteristics of the device fabrication will be uniform.

然后,如图3C所示,形成足够厚度的氮化硅层312后,氮化硅312能被各向异性刻蚀,以形成侧壁间隔物314,其沿着栅电极306的横向相对侧壁延伸。 Then, as shown in FIG. 3C, the silicon nitride layer 312 is formed of sufficient thickness, the silicon nitride 312 can be anisotropically etched to form sidewall spacers 314, 306 along transversely opposite side walls of the gate electrode extend. 该各向异性蚀刻工艺从水平表面,诸如源/漏延伸310和栅电极306的顶部去除氮化硅层,同时留下垂直表面上,诸如栅电极306的侧壁上的氮化硅层。 The anisotropic etching process from the horizontal surface, such as a source / drain extension 310 and the gate electrode 306 on top of the silicon nitride layer is removed, while leaving on a vertical surface, a silicon nitride layer on the sidewalls of the gate electrode 306, such as. 形成侧壁间隔物314之后,进行半导体器件的其他处理工艺,诸如形成深源/漏区316,和/或在源/漏区形成硅化物318。 After forming the sidewall spacers 314, additional processing process of a semiconductor device, such as the formation of deep source / drain regions 316, and / or silicide 318 formed in the source / drain regions. 侧壁间隔物314使得深源/漏区偏置(offseting),并使得硅化物,诸如硅化钛或硅化钴,被形成于源/漏区和栅电极顶部上, 以本领域公知的工艺进行自对准。 Sidewall spacers 314 such that the deep source / drain regions offset (offseting), and such silicide such as titanium silicide or cobalt silicide, are formed on top of the source region and the drain / gate electrodes, self-known in the art to process alignment.

设备 device

理想地,本发明的氮化硅层在低压热化学气相沉积反应器中进行。 Desirably, the silicon nitride layer of the present invention in a low pressure thermal chemical vapor deposition reactor.

图4示出了合适的反应器400的示例。 Figure 4 shows an example of a suitable reactor 400. 在本发明的实施方案中,氢自由基处理可以在用于沉积氮化硅层的同一个室内进行。 In an embodiment of the present invention, the hydrogen radical treatment may be performed in the same chamber for depositing a silicon nitride layer. 为了在用于沉积氮化硅层的同一个室内处理"所沉积的"氮化硅层,远程等离子体源可以与低压化学气相沉积反应器耦合连接,以将氢自由基源提供给该室。 In order to process in the same chamber for depositing the silicon nitride layer "deposited" silicon nitride layer, may be coupled to a remote plasma source connected to a low pressure chemical vapor deposition reactor to provide the hydrogen radical source to the chamber. 图4也示出了耦合到低压化学气相沉积反应器400的远程等离子体发生器源801的示例。 FIG 4 also shows an example of a coupled to a low pressure chemical vapor deposition reactor 801 remote plasma generator source 400. 将远程等离子体发生器801耦合到热化学气相沉积反应器400,将大大地提高本发明的产量,并使得氮化硅层在氮化硅沉积后,直接用氢自由基处理。 The remote plasma generator 801 is coupled to a thermal chemical vapor deposition reactor 400, will greatly increase the yield of the present invention, such that the silicon nitride layer and after the deposition of silicon nitride, directly treated with hydrogen radicals. 此外,当连续的沉积/处理循环被用于形成厚的氮化硅层,诸如大于200A的氮化硅时,此设备显著地提高晶片的产量。 Further, when successive deposition / treatment cycles are used to form thick silicon nitride layer, a silicon nitride such as greater than 200A, this device is to improve the wafer throughput significantly.

图4示出了反应器容器组件(反应器)400。 FIG 4 illustrates a reactor vessel assembly (reactor) 400. 图4显示,反应器400包括室本体406,其形成了反应室408,在其中,工艺气体、前体气体或反应物气体被热分解,以在晶片衬底上形成含硅层(未显示)。 Figure 4 shows a reactor chamber 400 includes a body 406, which forms a reaction chamber 408 in which process gases, precursor gases, or reactant gases are thermally decomposed to form a silicon-containing layer on a wafer substrate (not shown) . 室本体406由能使室承受10至约350托之间压力的材料构成。 Chamber body 406 under pressure between about 10 to 350 Torr by the can material chamber. 在一个示例性地实施例中,室本体406由铝合金材料构成。 In one exemplarily embodiment, the chamber body 406 is made of an aluminum alloy material. 室本体406包括通道410,以使控温流体被抽吸流过该通道,来冷却室本体406。 Chamber body 406 includes a channel 410, so that the temperature of fluid flowing through the passage to be drawn to cool the chamber body 406. 因为配备有控温流体通道,反应器400被称为"冷壁(cold-wall)"反应器。 Because the fluid passage is provided with a temperature control, the reactor 400 is referred to as "cold wall (cold-wall)" reactor. 将室本体406冷却,防止了由于活性物质和高温的存在而致使用于形成室本体406的材料的腐蚀。 The cooling chamber body 406 prevents corrosion of the material due to the presence of the active material and high temperature, which results in a forming chamber 406 of the body.

位于室本体406中的是反应室408、室盖426、面板(或喷头)430、 阻滞板(blocker plate)428和电阻性加热组件404。 Of the chamber body 406 are a reaction chamber 408, chamber lid 426, the panel (or head) 430, a blocker plate (blocker plate) 428 and a resistive heating assembly 404. 电阻性加热组件404 包括导线(wire leads) 412,这些导线的长度延加热器管414的长度延伸,加热器管414由镍制成。 The resistive heating assembly 404 includes a wire (wire leads) 412, the length of these wires extending heater tubes 414 extending the length of the heater tube 414 is made of nickel. 在加热器管414的顶端是加热盘416,其由烧结的AIN制成。 At the top of the heater tube 414 is a heating pan 416, which is made of a sintered AIN. 在加热盘416中是一个或多个加热线圈418,其由钼制成。 In the heating coil 416 is one or more heating coils 418, which is made of molybdenum. 导线412和线圈418通过铜焊结合起来,且在此是导电性的。 Wires 412 and the coil 418 combined by brazing, and this is electrically conductive. 线412与AIN陶瓷套管420热绝缘。 Line 412 and the sleeve 420 AIN ceramic thermal insulation. 线圈418提供大部分的电阻, 并且因此提供大部分的对反应室408的加热。 Coil 418 provides most of the resistance, and thus provides much of the reaction chamber 408 heating. 在加热盘416的顶部是称之为晶片槽(pocket) 422的凹槽,在槽422中放置晶片(未显示)。 At the top heating plate 416 is called a wafer recess grooves (Pocket) 422, the wafer is placed in the groove 422 (not shown).

图4显示,室本体408中还放置了升降器组件436。 4 shows, the chamber body 408 is also placed in the elevator assembly 436. 升降器组件436方便了晶片衬底(未显示)移进和移出反应室408。 Lifter assembly 436 facilitates the wafer substrate (not shown) into and out of the reaction chamber 408. 升降器组件436 可以是步进电机。 The lifter assembly 436 may be a stepper motor. 升降器组件436沿着轴405上下移动加热器组件404, 以方便晶片移进和移出反应室408。 436404 riser assembly to facilitate wafer into and out of the reaction chamber 408 along the shaft 405 moves up and down the heater assembly.

衬底或晶片通过进入口434,利用例如机械手式的传送装置(未显示)被放入反应室408中。 Substrate or wafer 434 through the access port, for example, using a robot-type transfer device (not shown) is placed in the reaction chamber 408. 在一种实施方案中,机械手式传送装置与传送片(transferblade)耦合,并且,机械手式传送装置控制传送片。 In one embodiment, the robot conveyor conveying sheet (transferblade) coupled to, and controls the robot conveyor transfer sheet. 传送片通过开口插入衬底,以将衬底加载入反应室408和加热盘416的槽422上。 Transfer sheet inserted through the opening of the substrate, the substrate is loaded to the reaction chamber 408 and the heating pan 422 of the groove 416. 衬底被装载时,升降器组件436降低加热器组件404和加热盘416,在沿着轴405向下的方向,以便加热盘416的表面处于进入口434的下面。 When a substrate is loaded, the lifter assembly 436 to reduce the heater assembly 404 and the heating plate 416, the shaft 405 along the downward direction, in order to heat the surface of the disk 416 is below the inlet port 434. 当加热盘416被降低时,衬底被置于反应室408中。 When the heating plate 416 is lowered, the substrate 408 is placed in a reaction chamber. 一旦衬底被装载,进入口434被密封,且升降器组件436移动或提升加热器组件404和加热盘416,在朝着面板430的高位的(如,向上)方向。 Once the substrate is loaded, the inlet port 434 is sealed and the lifter assembly 436 moves the heater assembly 404 and the lift or the heating plate 416, toward the upper panel 430 (e.g., upward) direction. 在一个示例性实施方案中,当晶片衬底距离面板430近(如400-900 密耳)时,提升停止。 In one exemplary embodiment, when the wafer substrate panel 430 near distance (e.g., 400-900 mils), lifting is stopped.

在一个示例性实施方案中,当准备沉积或处理时,由气体控制板401控制的工艺气体或前体被引入反应室408中。 In one exemplary embodiment, when ready or deposition process, the gas panel 401 or the precursor process gas is introduced into the control chamber 408 of the reaction. 阻滞板428具有许多孔(未显示),来容纳通过其中的气流。 Blocker plate 428 has a plurality of holes (not shown) therein to accommodate the gas flow through. 工艺气体首先通过端口424、 通过阻滞板428,然后通过面板430被引入到反应室408中。 First, the process gas through port 424, through blocker plate 428 and then is introduced into the reaction chamber 408 through the panel 430. 工艺气体通过端口424,通过阻滞板428中的许多孔,然后通过面板430被分布。 The process gas through port 424, through blocker plate 428 plurality of holes 430 is then distributed through the panel. 面板430工艺气体均匀地配送分布进入反应室408。 Distribution panel 430 uniformly distributed process gas into the reaction chamber 408.

然后,衬底通过,如向下(降低)加热器组件404,而从室中移出。 Then, through the substrate, such as down (decrease) the heater assembly 404, and removed from the chamber. 随着加热组件404向下移动,通过升降器组件436的作用,升降杆(lift pins) 442接触接触式升降板(contact lift plate) 444,并保持稳定,并最终在加热盘416的顶面上伸展,以当其被降低时,将衬底从加热盘416上分离开来。 As the heating assembly 404 moves downward by the action of the lifter assembly 436, the lift rod (lift pins) 442 contacts the contact lift plate (contact lift plate) 444, and remains stable, and finally top surface of the heating pan 416 stretched to when it is lowered, the substrate is divided from the heating plate 416 to leave. 然后,传送片通过开口434插入,并被置于衬底和加热盘416衬底之间。 Then, the transfer sheet is inserted through the opening 434, and is disposed between the substrate 416 and the substrate heating plate. 接触式升降板444然后被降低,从而降低升降杆442,并使得衬底被降低到传送片上。 A contact lift plate 444 is then lowered, thereby lowering the lift lever 442, and such that the substrate is lowered onto the transfer sheet. 衬底然后用传送片通过进入口434 而被移出。 Substrate transfer sheet is then removed through the access opening 434.

对于后续的衬底,上述机理可以重复。 For subsequent substrate, the mechanism described above may be repeated. 一种合适的升降组件436 的详细描述见美国专利No.5772773中,其被授权给加利福尼亚州圣克拉拉的应用材料有限公司。 A detailed description of a suitable lifting assembly 436 can be found in US Patent No.5772773, which is licensed to Applied Materials, Santa Clara, California Limited.

反应器400还包括温度指示器(未显示),以监控反应室408中的处理温度。 The reactor 400 further comprises a temperature indicator (not shown) to monitor the processing temperature of the reaction chamber 408. 在一个示例中,温度指示器可以是热电偶,其被安置以使它方便地提供关于加热盘416表面(或加热盘416支撑的衬底表面) 的温度的数据。 In one example, the temperature indicator can be a thermocouple, which is positioned such that it conveniently provides data about the temperature of the heating surface of the disc 416 (or the heating plate 416 supporting a substrate surface). 在反应器400中,衬底温度比加热盘416的温度稍微低一些,低20-30'C。 In the reactor 400, temperature of the substrate plate 416 slightly lower than the heating, low 20-30'C.

图4还显示反应室408衬有控温衬垫或绝缘衬垫409。 Figure 4 also shows the reaction chamber 408 is lined with a temperature-controlled liner or an insulating spacer 409. 如上所述, 室本体406包括通道410,以便控温流体产生冷壁室效应(cold-wall chamber effect)。 As described above, chamber body 406 includes a channel 410, so as to produce a cold temperature fluid chamber wall effects (cold-wall chamber effect). 反应室408中的温度能高达600。 The temperature in the reaction chamber 408 can be up to 600. C或甚至更高。 C or even higher. 随着化学品被用于反应室408形成层,高温容易腐蚀反应室408的室本体406。 As the chemical reaction chamber 408 is used to form a layer, the high temperature of the body prone to corrosion reaction chamber 408 of the chamber 406. 因此,室本体406配备有通道410,以便用于冷却室本体406的控温流体,诸如水或其他冷却流体通过。 Thus, the chamber body 406 is provided with a passage 410, so that the cooling fluid temperature for the chamber body 406, such as water or other cooling fluid. 这将防止室本体406变得太热,室本体406变得太热会使得室本体406容易被腐蚀。 This will prevent the chamber body 406 becomes too hot, the chamber body 406 will become too hot so that the chamber body 406 easily corroded. 与冷壁室相关的一个问题是:反应室408中的紧靠室的冷壁的区域容易经历温度的锐降。 One problem associated with the cold walls of the chamber are: a cold wall region of the chamber against the reaction chamber 408 tends to experience a sharp drop in temperature. 在这些区域的温度锐降促使颗粒形成或凝结,这对形成于反应室408中的含硅层是不利或不益的。 In these areas the temperature drop causes a sharp particle formation or coagulation, of the silicon-containing layer which is formed in the reaction chamber 408 is not detrimental or beneficial. 例如,在形成氮化硅层(Si3N4) 的沉积工艺中,HCD和NH3反应通常引起NH4Cl的形成。 For example, in the deposition process of forming a silicon nitride layer (Si3N4) in, the HCD and NH3 formed in the reaction is usually caused by the NH4Cl. NKtCi是不 NKtCi is not

受欢迎的盐副产物,需要被清理掉以防止污染正在形成的Si3N4。 Popular salt byproduct, need to be cleaned up in order to prevent contamination of Si3N4 being formed. 当温 When the temperature

度降低到约15(TC以下时,诸如NH4C1的凝结将发生。这些颗粒可以从室壁除去。除去的颗粒成为晶片衬底上的颗粒形成的成核点。在一 Decreases degrees to about 15 (TC hereinafter NH4C1 such condensation will occur. These particles may be removed from the wall. Removing particles become nucleation sites on the particles formed in the substrate wafer in a

种实施方案中,反应室408衬有控温衬垫409,以防止不期望的颗粒凝结。 Species embodiment, the reaction chamber 408 is lined with a temperature-controlled liner 409 to prevent undesired particle coagulation.

在一种实施方案中,控温流体衬垫409与室本体406的壁耦合, 这样控温衬垫409沿着室本体406的壁只有一些物理接触点。 In one embodiment, the wall temperature control fluid coupling pad 409 and chamber body 406, so that the pad 409 along the temperature control chamber 406 of the body wall only a few points of physical contact. (例如参见,图示于图4的接触点459)。 (See, e.g., illustrated in FIG. 4 contact point 459). 通过最小化传导点(conductingpoints), 最小化控温衬垫409和室本体406的壁之间的物理接触能最小化室本体406的热损耗。 By minimizing conducting points (conductingpoints), minimizing the temperature of the chamber body 406 and the pad 409 of physical contact between the wall of the chamber can be minimized heat loss of the body 406.

在沉积期间,清洗或吹扫气体(如氮)可被送入反应室408的底部, 以防止不需要的沉积。 During deposition, cleaning or purge gas (e.g., nitrogen) can be fed into the bottom of the reaction chamber 408, to prevent unwanted deposition.

反应器400也耦合到一个压力调节器或多个压力调节器(未显示)。 The reactor 400 is also coupled to one or more of the pressure regulator a pressure regulator (not shown). 压力调节器建立并维持反应室408中压力。 Pressure regulators establish and maintain pressure in the reaction chamber 408. 这些压力调节器在本领域是已知的。 These pressure regulators are known in the art. 能用于示例性实施方案的压力调节器必须能维持在约10托至约350托范围水平内的压力。 Can be used in the exemplary embodiment of the pressure regulator must maintain the pressure at about 10 Torr to about 350 Torr level. 可替代地,反应器400也可以被耦合于气体泵出系统(gas pump-out system)(未显示),其在本领域是公知的,用于将气体泵出反应室408。 Alternatively, the reactor 400 may also be coupled to a gas pump-out system (gas pump-out system) (not shown), which are well known in the art for pumping gas out of the reaction chamber 408. 该气体泵出系统(其可以包括,例如节流阀)也能被用于控制反应室408中的压力。 The gas pump-out system (which may include, for example, a throttle valve) can also be used in the reaction in the pressure control chamber 408. 反应器400也可以耦合感应器(未显示),其监控反应室408中的操作压力。 The reactor 400 may also be coupled inductor (not shown), which monitors the operating pressure of the reaction chamber 408.

在一种实施方案中,控制器或处理器/控制器卯0被耦合于室本体406,以接收来自感应器的信号,这些信号显示室压。 In one embodiment, the controller or processor / controller is coupled to a d 0 chamber body 406 to receive signals from sensors, which signals the display chamber pressure. 处理器/控制器900还能被连接到气体控制板401系统,以控制氮源气体、硅源气体和惰性和/或清洗气体的流量。 The processor / controller 900 is also connected to a gas panel 401 system to control the nitrogen source gas, silicon source and an inert gas and / or purge gas flow rate. 处理器900可以与压力调节器或多个调节器协同工作,以调节或维持反应室408中的压力处于期望的压力下。 The processor 900 may be a pressure regulator or a pressure regulator and a plurality of work together to adjust or maintain the reaction chamber 408 at a desired pressure. 此外,处理器腔制器能控制加热盘的温度,从而控制置于其上的衬底的温度。 Further, the processor can control the temperature of the cavity is made of the heating plate, so as to control the temperature of the substrate disposed thereon. 处理器/控制器卯0包括存储器,其包括计算机可读形式的指令,以将氮源气体流量、硅源气体流量和惰性气体流量,以及室内的压力和加热盘的温度控制在上面设定的参数范围内,以形成本发明的氮化硅层。 The processor / controller includes a memory sockets 0, comprising instructions in computer readable form, to the temperature of the nitrogen source gas flow, the silicon source gas flow and the inert gas flow, and the chamber pressure and heating plate above the set of control within the parameters, to form a silicon nitride layer of the present invention. 例如,存储在处理器/控制器900的存储器中的是加热衬底到低于或等于55(TC的温度的指令,和当加热衬底到低于或等于550'C 的温度时,提供硅源气体,和氮源气体和/或硅/氮源气体到室408的指令,以及将室408中的压力控制在10-350托之间的指令。 • For example, in the memory the processor / controller 900 is heating the substrate to 55 (instruction temperature TC is less than or equal, and when the substrate is heated to a temperature equal to or below 550'C, there is provided a silicon instruction source gas and nitrogen source gas and / or a silicon / nitrogen source gas into the chamber 408, the chamber 408 and the pressure control instructions between 10 to 350 Torr. •

选择反应器400部件的材料,以便被暴露的部件必须适于本发明的高温处理。 Selecting parts of the reactor material 400, so as to be exposed components must be suitable for high-temperature treatment according to the present invention. 热分解本发明的前体或反应物质以形成含硅层,涉及反应室408中的温度最高达600°C 。 Thermally decomposing the precursor substance of the present invention or the reaction to form silicon-containing layer, the temperature of the reaction chamber 408 is directed up to 600 ° C. 反应器400的部件材料应该是能经受如此高温的类型。 The reactor component 400 material should be able to withstand such a high temperature type. 在一种实施方案中,室本体406由耐腐蚀金属构成, 诸如硬质阳极氧化铝(hardanodizedaluminum)。 In one embodiment, the chamber body 406 is made of corrosion-resistant metal such as hard anodized aluminum (hardanodizedaluminum). 此种铝常常较昂贵。 Such aluminum is often expensive. 可替代地,室本体406包括通道410,用于控温流体通过。 Alternatively, the chamber body 406 includes passages 410 for temperature control fluid. 控温流体通道能使室本体406由非常便宜的铝合金或其他合适金属材料制成,因为通道410可以维持室本体406的处于冷的状态。 Temperature fluid passage chamber body 406 can be made of a very inexpensive aluminum alloy or other suitable metal material, because the channel 410 of the body 406 of the chamber can be maintained in a cold state. 如上所述,这就是为什么反应器400常常被称为冷壁反应器的原因之一。 As mentioned above, this is why the reactor 400 is often referred to as one of the reasons cold-wall reactor. 为了防止冷壁或冷却的室本体406上的不必要的凝结,上面描述的控温衬垫409可以由这样的材料制成:其可以吸收由反应室408发出的热,并维持控温衬垫409到至少约或高于150'C的温度,或可替代地,维持到至少约或高于200'C的温度,这取决于层形成的应用。 To prevent unwanted condensation on the cold wall or the cooled chamber body 406, the above-described temperature control pad 409 may be made of a material: which can absorb the heat emitted from the reaction chamber 408, and the pad temperature maintained to at least about 409, or higher than the temperature of 150'C, or alternatively, to maintain a temperature of at least about 200'C or higher, depending on the application layer. 在一种实施方案中,控温衬垫409必须维持在足以防止不必要的凝结的温度。 In one embodiment, the liner 409 must be maintained at a temperature sufficient to prevent unwanted condensation temperature.

此外,部件材料也应该与工艺气体和其他化学品,诸如清洗化学制品和可能引入反应室408的前体相兼容。 Additionally, the component materials should also process gases and other chemicals, such as cleaning chemicals and the precursors introduced into the reaction chamber may be 408 compatible. 在一种实施方案中,加热组件404暴露的表面可以由各种材料组成,只要该材料与工艺兼容。 In one embodiment, the exposed surface of the heating assembly 404 may be composed of various materials, as long as the process compatible material. 例如,该讨论中的示例性实施方案需要在高温下使用腐蚀性化学品。 For example, an exemplary embodiment of the discussion requires the use of corrosive chemicals at high temperatures. 加热组件的部件因此必须经受这种环境。 Member of the heating assembly thus must withstand this environment. 在一个示例中,加热组件的部件由陶瓷材料构成,诸如氮化铝(AIN)。 In one example, the heating assembly member is made of a ceramic material, such as aluminum nitride (AIN). 加热组件404的加热盘416 也可以由氮化铝材料构成。 Heating assembly 404 heating coil 416 may be made of aluminum nitride material.

在一种示例性实施方案中,反应室408用稳定气体,诸如N2、 He、 Ar或其组合来稳定。 In an exemplary embodiment, the reaction chamber 408 with a stabilizing gas, such as N2, He, Ar or a combination thereof to stabilize. 在一个示例中,气体控制板系统401包括气体歧管,其将释放稳定气体到反应室408中。 In one example, the gas panel system 401 includes a gas manifold, which releases gas into the reaction chamber stabilizer 408. 该稳定气体能具有l,OOO sccm至10,000 sccm的流速,对于容量为5至6升的反应器400优选流速约为2,000 sccm。 The stabilization gas can have a flow rate of l, OOO sccm to 10,000 sccm, and preferably 400 to a capacity of 5-6 liters reactor flow rate of about 2,000 sccm.

在本发明的实施方案中,反应器400被耦合到远程等离子体发生器801中,其产生并提供氢自由基给沉积室408。 In an embodiment of the present invention, the reactor 400 is coupled to a remote plasma generator 801, which generates and provides hydrogen radicals to deposition chamber 408. 远程等离子体发生器801包括磁控管802,其用微波源产生微波。 Remote plasma generator 801 includes a magnetron 802 which generates microwaves with a microwave source. 磁控管802优选能产生最高达10,000瓦2.5 Ghz的徼波能量。 Jiao magnetron 802 is preferably capable of generating wave energy up to 10,000 watts of 2.5 Ghz. 值得注意的是,需要的能量取决于室408的大小(或与室408成比例)。 It is noted that the energy required depends on the size of the chamber 408 (or chamber 408 is proportional). 对于用于处理300mm晶片的退火室,IO,OOO瓦的能量应该足够了。 For a 300mm wafer processing chamber annealing, IO, OOO watts should be sufficient. 尽管微波源被用于在设备800 中产生等离子体,也可以使用其他能源诸如射频(RF)源。 Although a microwave source is used to generate a plasma in the apparatus 800, other energy sources may be used such as radio frequency (RF) source.

磁控管802被耦合于绝缘体和虛负载(dummy load) 804,其被提供用于阻抗匹配。 The magnetron 802 is coupled to a dummy load and an insulator (dummy load) 804, which is provided for impedance matching. 虚负载吸收反射能,因此没有反射能进入磁控管头部。 Dummy load absorbs the reflected energy, and therefore no reflected energy into the magnetron head. 绝缘体和虚负载804通过波导管806连接起来,其将微波能量传送到自动调谐器(autotuner) 808。 Insulator 804 and dummy load 806 are connected by a waveguide which transmits the microwave energy to the auto tuner (autotuner) 808. 自动调谐器808包括阻抗匹配头和独立的检测器模块,其使用三个步电机驱动的阻抗匹配轴端(impedance matching stub),来减少导向电源的微波能量的反射能量。 Auto tuner 808 includes an impedance matching head and a separate detector module that uses three-step motor drive shaft impedance matching (impedance matching stub), to reduce the reflection of microwave energy directed energy power source. 自动调谐器808将微波能量集中于微波作用器腔(microwave applicator cavity)(或室)810的中心,以便能量通过导管812被输送到作用器腔810的氢处理气体吸收。 Auto tuner 808 microwave energy is concentrated on the central role of the microwave cavity (microwave applicator cavity) (or chamber) 810 so that energy is supplied to the hydrogen treat gas absorbing action chamber 810 through conduit 812. 尽管优选自动调谐器,手动调谐器也可以使用。 Although the preferred auto tuner, the tuner may be used manually.

作用器(Applicator) 810使用从磁控管802接收到的微波能量,当氢处理气体流经位于作用器810里面的石英等离子体管时,由氢处理气体产生等离子体。 Effector (Applicator) 810 using microwave energy from the magnetron 802 to the receiver, when the effect of the hydrogen treatment gas through 810 located inside a quartz plasma tube, generating a plasma from the hydrogen treatment gas. 用于产生氢自由基的氢处理气体,诸如但不局限于112和NH3的源814,诸如气体箱(tank),被与微波作用器810耦合。 Hydrogen treat gas for generating hydrogen radicals, such as but not limited to, 112 and 814 NH3 source, the coupling such as a gas tank (Tank), is 810 with microwave irradiation. 此外,惰性气体源,诸如氩(Ar)或氦(He)源也可以与作用器810 耦合。 Further, the inert gas source 810 is coupled, such as argon (Ar) or helium (He) source may also be effector. 预先点火的汞灯能被用于将紫外光发射入等离子体管,以部分地电离工艺气体,从而使微波能量容易地点燃或激发等离子体。 Pre-ignition can be a mercury lamp for emitting ultraviolet light into the plasma tube to partially ionize the process gas, so that the microwave energy excited plasma or easily ignite.

来自磁控管802的微波能量将氢处理气体转化为等离子体,其主要由三种组分组成:电离的或荷电的氢原子、激活的(活性的)电中性的氢原子和含中间产物氢的物质,它们全部用于构成本发明的"氢自由基"。 The microwave energy from magnetron 802 hydrogen treatment gas into a plasma, consisting essentially of three components: a hydrogen atom ionized or electrically charged, electrically neutral active hydrogen atoms (active) and containing the intermediate product hydrogen substances, all of which constituting the present invention "hydrogen radicals."

作用器810能被栓接到设备400的盖子上。 Effector 810 can be bolted to the cover 400 of the device. 浓縮的等离子体混和物通过导管814向下流到室408中。 The concentrated plasma mixture flows down the chamber 814 through conduit 408. 因为氢自由基在与待退火的衬底定位的室相独立的或远离的位置(室810)中产生,该氢自由基称之为"远程产生的"。 Because the hydrogen radicals independently or distant positions (chamber 810) in the substrate to be annealed generating chamber located, the hydrogen radicals is called "remotely generated."

远程等离子体源801能与处理器/控制器900相耦合。 The remote plasma source 801 can be coupled to the processor / controller 900. 处理器/控制器卯0能包括以计算机可读取形式存储于存储器中的指令,这些指令控制远程等离子体源801的操作,以完成上面描述的氢自由基处理工艺。 The processor / controller can include d 0 stored in the computer-readable memory instructions that control the operation of remote plasma source 801 to complete the hydrogen radical treatment process described above. 这些指令可以包括,例如,控制氢处理气体流速和能量,以获得处理氮化硅层所必须的期望的氢自由基流量,诸如在5xl015个原子/«112和lxlO"个原子/cmS之间的流量的指令,和也能包括控制加热盘的温度(从而控制晶片的温度)的指令,以及控制氢自由基处理期间室408内的压力的指令。 These instructions may include, for example, to control the energy and hydrogen treat gas flow rate, the flow rate to obtain the hydrogen radical treatment silicon nitride layer to be desired, such as between atoms 5xl015 / «112 and lxlO" atoms / cmS of flow instructions, and can also include controlling the temperature of the heating plate (and thus temperature control of the wafer) of the instruction, and an instruction 408 to control pressure in the chamber during the hydrogen radical treatment.

此外,尽管本发明参照利用单晶片设备进行了描述,如果需要, 本发明的沉积和处理工艺也能在半批量或管式设备中实施,而不会脱离本发明的范围。 Furthermore, although the present invention has been described with reference to the use of single-wafer apparatus, if desired, the deposition and treatment processes of the present invention can also be implemented in a semi-batch or tube type apparatus, without departing from the scope of the invention.

在本发明的可替代实施方案中,低温氮化硅沉积工艺能在群集工具(clustertool)中实施,诸如图5所示的群集工具500。 In an alternative embodiment of the present invention, the low temperature silicon nitride deposition process can be implemented in a cluster tool (clustertool), the cluster tool 500 such as shown in Figure 5. 群集工具500 包括可密封的运送室502,其具有晶片输送装置504,诸如包括在其中的机械手。 Transport cluster tool 500 includes a sealable chamber 502 having a wafer transport apparatus 504, such as a robot included therein. 负载锁(load lock)或一对负载锁506,其通过可密封门与运送室502连接,使得晶片能通过机械手504被送进或送出群集工具500。 Loadlock (load lock) or a pair of load locks 506, which may be sealed by a door 502 is connected with the transport chamber, such that the wafer 504 is fed by a robot or out of cluster tool 500. 通过可密封门耦合连接到运送室502的是氮化硅沉积反应器508,诸如应用材料有限公司的Xgen单晶片、冷壁、具有电阻加热器的热化学气相沉积反应器。 Coupled to the transport chamber 502 is connected via a sealing door is a silicon nitride deposition reactor 508, such as a single wafer Xgen of Applied Materials, Inc., cold wall, thermal chemical vapor deposition reactor having a resistive heater. 也通过可密封门被耦合到运送室502的是氢自由基处理室510,如图5所示。 Is also coupled to the transport chamber 502 through a sealable door is hydrogen radical treatment chamber 510, as shown in FIG. 氢自由基处理室例如可以是,等离子体室, 诸如应用材料有限公司身产的高级去除钝化层附加(ASP, AdvancedStrip Passivation Plus)室,远程等离子体室,诸如应用材料有限公司生产的远程等离子体渗氮(RPN, Remote Plasma Nitridation)室,或"热线"室。 Hydrogen radical treatment chamber can be for example, a plasma chamber, such as Applied Materials Advanced removed passivation layer produced by the additional body (ASP, AdvancedStrip Passivation Plus) chamber, a remote plasma chamber, such as Applied Materials Remote Plasma Co nitriding body (RPN, Remote Plasma nitridation) chamber, or "hot" chamber. 通常,运送室502保持在降低的室压下,并具有惰性环境或气氛,诸如N2。 Typically, transfer chamber 502 is maintained at a reduced chamber pressure and an inert environment or atmosphere, such as N2. 这样,晶片能从一个室(如,氮化硅沉积室508)转移到另一个室(如,氢自由基处理室),反之亦然,而无需将晶片暴露于氧化环境或污染物中。 Thus, from a wafer chamber (e.g., silicon nitride deposition chamber 508) was transferred to another chamber (e.g., hydrogen radical treatment chamber) and vice versa, without exposing the wafer to ambient contaminants or oxidation. 群集工具500也可以包括如上所述的处理器/控制器900,以控制氮化硅沉积反应器500以及氢自由基处理室510的操作, 以沉积氮化硅层,如上所述,并用氢自由基处理氮化硅层,如上所述。 The cluster tool 500 described above may also include a processor / controller 900 to control the operation of the silicon nitride deposition reactor 500 and a hydrogen radical treatment chamber 510 to deposit a silicon nitride layer, as described above, consisting of hydrogen and yl treatment the silicon nitride layer, as described above.

在使用中,晶片或衬底,诸如图3A所示晶片,被机械手504由负载锁506带入到运送室502。 In use, a wafer or substrate, such as the wafer shown in FIG. 3A, the robot 504 is brought into the load lock chamber 506 to the transport 502. 该晶片被转移到氮化硅沉积室508,它们之间的门被密封,氮化硅层以低沉积温度工艺形成于其上。 The wafer is transferred into the silicon nitride deposition chamber 508, the door therebetween sealed, the silicon nitride layer is formed at a low deposition temperature process thereon. 一旦氮化硅层在其上形成,晶片被机械手504从氮化硅沉积室508移出,并被机械手504带入氢自由基处理室510。 Once the silicon nitride layer is formed on the wafer by the robot 504 from silicon nitride deposition chamber 508 is removed, and the robot 504 into hydrogen radical treatment chamber 510. 氢自由基处理室510和转移室502之间的门然后被密封,氮化硅层按如上所述的方法被暴露于氢自由基。 A door between hydrogen radical treatment chamber 510 and transfer chamber 502 is then sealed, by the method described above, the silicon nitride layer is exposed to hydrogen radicals. 如果想要得到较厚的氮化硅层,晶片可以从室510移去,并被带回到氮化硅沉积室508,以沉积额外的氮化硅。 If you want to get a thicker silicon nitride layer, the wafer may be removed from chamber 510 and brought back to the silicon nitride deposition chamber 508 to deposit additional silicon nitride. 该晶片再一次从氮化硅沉积室508移出,并被带回到氢自由基处理室510,并再次用氢自由基处理。 The wafer is removed again from the silicon nitride deposition chamber 508 and brought back to the hydrogen radical treatment chamber 510, and again treated with hydrogen radicals. 该晶片可以在沉积室508和处理室510之间持续转移,直到获得期望质量和厚度的氮化硅层。 The wafer may be continuously transferred between the deposition chamber 508 and the process chamber 510, a silicon nitride layer until a desired thickness and quality. 一旦足够厚的氮化硅层形成,晶片被从群集工具500中移出。 Once a sufficiently thick silicon nitride layer is formed, the wafer is removed from cluster tool 500.

因此本发明描述了在低沉积温度下,沉积和处理高质量的氮化硅层的方法和设备。 Therefore, the present invention describes at a low deposition temperature, deposition process and a method and apparatus for high-quality silicon nitride layer.

Claims (29)

1.一种加工衬底的方法,包括: 加热衬底至550℃或更低的温度; 热分解含硅和氮源气体,或含硅源气体和含氮源气体,以在所述衬底表面上沉积氮化硅层,其中所述含硅源气体或所述含硅和氮源气体包含具有选自Si-Si、N=N和NN的一个或多个键的化合物;和然后将所述沉积的氮化硅层暴露于氢自由基,其中所述氢自由基通过含氢源气体的等离子体分解而被形成,并且其中所述含硅源气体或所述含硅和氮源气体包含通过单键连接到第二硅原子的第一硅原子,和连接到所述第一硅原子和所述第二硅原子的氯原子或氮原子中的至少一种。 CLAIMS 1. A method for processing a substrate, comprising: heating a substrate or a lower temperature to 550 deg.] C; thermal decomposition of silicon and nitrogen source gas or a silicon containing source gas and a nitrogen source gas to the substrate depositing a silicon nitride layer on the surface, wherein the silicon containing source gas or the silicon and nitrogen source gas selected from the group comprising a compound having a Si-Si, N = N, and one or more NN bonds; and then the said deposited silicon nitride layer is exposed to hydrogen radicals, wherein said hydrogen radicals by plasma decomposition of a hydrogen containing source gas is formed, and wherein the silicon containing source gas or the silicon and nitrogen source gas comprising connected to a second silicon atom by a single bond the first silicon atoms, and at least one silicon atom connected to said first and second silicon atoms, a chlorine atom or a nitrogen atom.
2. 如权利要求1所述的方法,其中所述含氢源气体包括NH3、 Hb或NH3和H2的组合。 2. The method according to claim 1, wherein said hydrogen containing source gas comprises NH3 combination, or Hb of NH3 and H2.
3. 如权利要求1所述的方法,其中所述氮化硅层用氢自由基以5xl0】5个原子/cn^至1 x 10"个原子/cr^之间的流量处理。 3. The method according to claim 1, wherein the silicon nitride layer with hydrogen radicals to 5xl0 5] atoms / cn ^ to 1 x 10 "traffic handling between atoms / cr ^.
4. 如权利要求1所述的方法,其中所述含氢源气体还包括选自氮气、氩气和氦气的惰性气体。 4. The method according to claim 1, wherein said hydrogen containing source gas further comprises an inert gas selected from nitrogen, argon and helium.
5. 如权利要求1所述的方法,其中源气体的等离子体分解在物理上远离用氢自由基处理所述氮化硅层的室的地方进行。 5. The method according to claim 1, wherein the plasma decomposition of the source gas radical physically remote processing chamber where the silicon nitride layer is carried out with hydrogen.
6. 如权利要求1所述的方法,其中将所述氮化硅层暴露于氢自由基后,所述氮化硅层具有小于1.0a"/。的氯浓度。 6. The method according to claim 1, wherein the silicon nitride layer exposed to hydrogen radicals after the silicon nitride layer has a chlorine concentration of less than 1.0a "/. Of.
7. 如权利要求1所述的方法,其中将所述氮化硅层暴露于氢自由基后,所述氮化硅层具有小于5a"/。的碳浓度。 7. The method according to claim 1, wherein the silicon nitride layer exposed to hydrogen radicals after the silicon nitride layer having a carbon concentration of less than 5a "/. Of.
8. 如权利要求l所述的方法,其中所述热分解温度低于50(TC。 The method as claimed in claim l, wherein said thermal decomposition temperature is lower than 50 (TC.
9. 如权利要求1所述的方法,其中所述氮化硅层以高于100A / 分钟的沉积速度形成。 9. The method according to claim 1, wherein the silicon nitride layer at a deposition rate greater than 100A / min is formed.
10. 如权利要求1所述的方法,其中所述含硅源气体或所述含硅和氮源气体包含通过单键连接到第二硅原子的第一硅原子,和连接到所述第一硅原子和所述第二硅原子的氮原子,以及连接到所述氮原子的碳原子。 10. The method according to claim 1, wherein said silicon containing source gas or the silicon and nitrogen source gas comprising a first silicon atom connected to a second silicon atom by a single bond, and connected to the first a nitrogen atom and a silicon atom of said second silicon atom, and a nitrogen atom attached to the carbon atom.
11. 如权利要求l所述的方法,还包括:通过热分解含硅和氮源气体或含硅源气体和含氮源气体将第二层氮化硅层沉积到处理过的氮化硅层上;和将所述第二层氮化硅层暴露于氢自由基。 11. The method of claim l, further comprising: a second layer of silicon nitride layer is deposited onto the treated silicon nitride layer by thermally decomposing a silicon and nitrogen source gas or a silicon containing source gas and a nitrogen containing source gas on; and the second layer of silicon nitride layer exposed to hydrogen radicals.
12. 如权利要求11所述的方法,还包括通过热分解含硅和氮源气体或含硅源气体和含氮源气体将第三层氮化硅层沉积到第二层处理过的氮化硅层上;和将所述第三层氮化硅层暴露于氢自由基。 12. The method as claimed in claim 11, further comprising a thermal decomposition silicon and nitrogen source gas or a silicon containing source gas and a nitrogen containing source gas to deposit a silicon nitride layer to the third layer of the nitride treated second layer silicon layer; and a third layer of the silicon nitride layer exposed to hydrogen radicals.
13. 如权利要求1所述的方法,其中氮化硅沉积层在45(TC和600°C温度之间,用氢自由基处理。 13. The method according to claim 1, wherein the deposited layer of silicon nitride (TC between 45 and 600 ° C temperature, treated with hydrogen radicals.
14. 如权利要求l所述的方法,其中,处理所述氮化硅层后,所述氮化硅层的氢浓度小于10 at%,将所述氮化硅层暴露于氢自由基后,其折射率大于或等于1.90,蚀刻速率等同于利用缓冲氧化蚀刻的氧化硅的蚀刻速率,或它们的组合。 14. The method according to claim l, wherein the post-processing the silicon nitride layer, the hydrogen concentration of the silicon nitride layer is less than 10 at%, the silicon nitride layer is exposed to the hydrogen radical, a refractive index greater than or equal to 1.90, the etching rate equivalent to the etch rate of silicon oxide utilizing a buffered oxide etch, or a combination thereof.
15. 加工衬底的方法,包括加热衬底至55(TC或更低的温度;热分解含硅和氮源气体,或含硅源气体和含氮源气体,以在所述衬底表面上沉积氮化硅层,其中所述含硅源气体或所述含硅和氮源气体包含具有选自Si-Si、 N:N和NN的一个或多个键的化合物;和然后将所述沉积的氮化硅层暴露于氢自由基,其中所述氢自由基通过含氢源气体的等离子体分解而被形成,并且所述含硅源气体或所述含硅和氮源气体包含选自具有R2N-Si (R'2)-Si (R'2)-NR2、 R3-Si-N3、 R'3-Si-NR-NR2的结构的化合物,其中R和R'包括一个或多个选自卤素、具有一个或多个双键的有机或芳族基团、具有一个或多个三键的有机基团、脂族垸基基团、环烷基基团、有机硅基团、烷基氨基基团或含有N或Si的环状基团及其组合的官能团。 15. A method of processing a substrate, comprising heating the substrate to 55 (TC or lower temperature; thermal decomposition of silicon and nitrogen source gas or a silicon containing source gas and nitrogen source gas on the substrate surface to depositing a silicon nitride layer, wherein the silicon containing source gas or the silicon and nitrogen source gas selected from the group comprising a Si-Si, N: N and NN of a compound or a plurality of keys; and then the deposition silicon nitride layer is exposed to hydrogen radicals, wherein the hydrogen radical by plasma decomposition of a hydrogen containing source gas is formed, and the silicon containing source gas or the silicon and nitrogen source gas selected from the group comprising having R2N-Si (R'2) -Si (R'2) -NR2, R3-Si-N3, compound R'3-Si-NR-NR2 structure, wherein R and R 'comprises one or more groups selected from halogen, having one or more double bonds or aromatic organic groups having one or more triple bonds organic group, embankment aliphatic group, a cycloalkyl group, an organosilicon group, an alkylamino group group containing N or Si, or cyclic group, and combinations of functional groups.
16. 如权利要求15所述的方法,其中R和R'包括一个或多个选自氯、甲基、乙基、异丙基、三甲代甲硅烷基、吡咯烷及其组合的官能团。 16. The method as claimed in claim 15, wherein R and R 'comprises one or more groups selected from chloro, methyl, ethyl, isopropyl, trimethylsilyl group, pyrrolidine and combinations of functional groups.
17. 如权利要求16所述的方法,其中所述含硅源气体或所述含硅和氮源气体包含选自1,2二乙基-四(二乙基氨基)乙硅烷、1,2-二氯-四(二乙基氨基)乙硅烷、六(N-吡咯垸基)乙硅烷、l,l,2,2-四氯-二(二-三甲基氨基)乙硅烷、U,2,2-四氯-二(二-异丙基)乙硅烷、1,2-二甲基-四(二乙基氨基)乙硅烷、三(二甲基氨基)硅烷叠氮化合物、三甲基氨基硅烷叠氮化合物和(2,2 二甲肼)二甲基硅垸的一种或多种化合 17. The method according to claim 16, wherein said silicon containing source gas or the silicon and nitrogen source gas selected from the group comprising 1,2-diethyl - tetrakis (diethylamino) disilane, 1, 2 - dichloro - tetrakis (diethylamino) disilane, six (N- embankment pyrrol-yl) disilane, l, l, 2,2- tetrachloro - bis (di - trimethylamino) disilane, U, tetrachloro 2,2 - bis (di - isopropyl) disilane, 1,2-dimethyl - tetrakis (diethylamino) disilane, tris (dimethylamino) silane azide, three a substrate aminosilane azide (2,2-dimethylhydrazine) dimethyl embankment or more silicon compounds
18. 如权利要求15所述的方法,其中所述含氢源气体包括NH3、 H2或NH3和H2的组合。 18. The method according to claim 15, wherein said hydrogen containing source gas comprises a combination of NH3, H2, or NH3 and H2.
19. 如权利要求15所述的方法,其中所述氮化硅层用氢自由基以5xl0"个原子/cr^至1 x 1017个原子/^112之间的流量处理。 19. The method according to claim 15, wherein the silicon nitride layer with hydrogen radicals to 5xl0 "atoms / Cr ^ to 1 x 1017 atoms / ^ 112 between traffic handling.
20. 如权利要求15所述的方法,其中所述含氢源气体还包括选自氮气、氩气和氦气的惰性气体。 20. The method according to claim 15, wherein said hydrogen containing source gas further comprises an inert gas selected from nitrogen, argon and helium.
21. 如权利要求15所述的方法,其中源气体的等离子体分解在物理上远离用氢自由基处理所述氮化硅层的室的地方进行。 21. The method according to claim 15, wherein the plasma decomposition of the source gas radical physically remote processing chamber where the silicon nitride layer is carried out with hydrogen.
22. 如权利要求15所述的方法,其中将所述氮化硅层暴露于氢自由基后,所述氮化硅层具有小于1.0沈%的氯浓度。 22. The method according to claim 15, wherein the silicon nitride layer exposed to hydrogen radicals after the silicon nitride layer has a chlorine concentration of less than 1.0% of the sink.
23. 如权利要求15所述的方法,其中将所述氮化硅层暴露于氢自由基后,所述氮化硅层具有小于5at.。 23. The method according to claim 15, wherein the silicon nitride layer exposed to hydrogen radicals after the silicon nitride layer is less than 5at .. /。 /. 的碳浓度。 The carbon concentration.
24. 如权利要求15所述的方法,其中所述热分解温度低于50(TC。 24. The method according to claim 15, wherein said thermal decomposition temperature is lower than 50 (TC.
25. 如权利要求15所述的方法,其中所述氮化硅层以高于100A/ 分钟的沉积速度形成。 25. The method according to claim 15, wherein the silicon nitride layer at a deposition rate greater than 100A / min is formed.
26. 如权利要求15所述的方法,还包括-通过热分解含硅和氮源气体或含硅源气体和含氮源气体将第二层氮化硅层沉积到处理过的氮化硅层上;和将所述第二层氮化硅层暴露于氢自由基。 26. The method according to claim 15, further comprising - a second layer of silicon nitride layer is deposited onto the treated silicon nitride layer is decomposed and the nitrogen source gas and a nitrogen containing source gas or a silicon containing source gas by heat on; and the second layer of silicon nitride layer exposed to hydrogen radicals.
27. 如权利要求26所述的方法,还包括通过热分解含硅和氮源气体或含硅源气体和含氮源气体将第三层氮化硅层沉积到第二层处理过的氮化硅层上;和将所述第三层氮化硅层暴露于氢自由基。 27. The method according to claim 26, further comprising a third layer of deposited silicon nitride layer to the second layer is treated by thermal decomposition of a nitride silicon and nitrogen source gas or a silicon containing source gas and a nitrogen containing source gas silicon layer; and a third layer of the silicon nitride layer exposed to hydrogen radicals.
28. 如权利要求15所述的方法,其中氮化硅沉积层在45(TC和600°C温度之间,用氢自由基处理。 28. The method according to claim 15, wherein the deposited layer of silicon nitride (TC between 45 and 600 ° C temperature, treated with hydrogen radicals.
29. 如权利要求15所述的方法,其中,处理所述氮化硅层后,所述氮化硅层的氢浓度小于10 at.%,将所述氮化硅层暴露于氢自由基后,其折射率大于或等于1.90,蚀刻速率等同于利用缓冲氧化蚀刻的,化硅的蚀刻速率,或它们的组合c After 29. The method of claim 15, wherein the post-processing the silicon nitride layer, the hydrogen concentration of the silicon nitride layer is less than 10 at.%, The silicon nitride layer exposed to hydrogen radicals having a refractive index greater than or equal to 1.90, the etching rate is equivalent to using a buffered oxide etch, the etch rate of silicon, or a combination thereof c
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