CN100565824C - 半导体器件的制造方法及通过该方法制造的半导体器件 - Google Patents
半导体器件的制造方法及通过该方法制造的半导体器件 Download PDFInfo
- Publication number
- CN100565824C CN100565824C CNB2005100640634A CN200510064063A CN100565824C CN 100565824 C CN100565824 C CN 100565824C CN B2005100640634 A CNB2005100640634 A CN B2005100640634A CN 200510064063 A CN200510064063 A CN 200510064063A CN 100565824 C CN100565824 C CN 100565824C
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- Prior art keywords
- silicon layer
- crystallization
- substrate
- semiconductor layer
- annealing
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- 238000000034 method Methods 0.000 title claims abstract description 85
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000000137 annealing Methods 0.000 claims abstract description 59
- 238000002425 crystallisation Methods 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 230000008025 crystallization Effects 0.000 claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 36
- 239000010703 silicon Substances 0.000 claims abstract description 36
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 24
- 239000012212 insulator Substances 0.000 claims abstract description 14
- 238000005516 engineering process Methods 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000005224 laser annealing Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 25
- 229920005591 polysilicon Polymers 0.000 abstract description 25
- 239000012535 impurity Substances 0.000 abstract description 6
- 239000012190 activator Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 50
- 238000004151 rapid thermal annealing Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 206010020852 Hypertonia Diseases 0.000 description 2
- 208000001953 Hypotension Diseases 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 208000021822 hypotensive Diseases 0.000 description 2
- 230000001077 hypotensive effect Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040052054A KR100666563B1 (ko) | 2004-07-05 | 2004-07-05 | 반도체 장치의 제조 방법 및 이 방법에 의하여 제조되는반도체 장치 |
KR52054/04 | 2004-07-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1722385A CN1722385A (zh) | 2006-01-18 |
CN100565824C true CN100565824C (zh) | 2009-12-02 |
Family
ID=35514520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100640634A Expired - Fee Related CN100565824C (zh) | 2004-07-05 | 2005-04-06 | 半导体器件的制造方法及通过该方法制造的半导体器件 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7544550B2 (zh) |
JP (1) | JP2006024887A (zh) |
KR (1) | KR100666563B1 (zh) |
CN (1) | CN100565824C (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101240651B1 (ko) * | 2006-04-12 | 2013-03-08 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
KR100810638B1 (ko) * | 2006-12-06 | 2008-03-07 | 삼성에스디아이 주식회사 | 박막트랜지스터와 그 제조방법 및 이를 구비한유기전계발광표시장치 |
KR101015847B1 (ko) | 2008-01-18 | 2011-02-23 | 삼성모바일디스플레이주식회사 | 박막트랜지스터와 그 제조방법 및 이를 구비한유기전계발광표시장치 |
US9419032B2 (en) * | 2009-08-14 | 2016-08-16 | Nanchang O-Film Optoelectronics Technology Ltd | Wafer level camera module with molded housing and method of manufacturing |
US20130077012A1 (en) * | 2010-07-08 | 2013-03-28 | Kenshi Tada | Semiconductor device and method for manufacturing the same, and liquid crystal display device |
CN104658898A (zh) * | 2013-11-22 | 2015-05-27 | 上海和辉光电有限公司 | 低温多晶硅薄膜的制作方法 |
CN105938800A (zh) | 2016-07-01 | 2016-09-14 | 深圳市华星光电技术有限公司 | 薄膜晶体管的制造方法及阵列基板的制造方法 |
CN108074525B (zh) * | 2016-11-11 | 2019-09-17 | 昆山国显光电有限公司 | 像素电路的驱动方法、显示面板及显示装置 |
CN106783544A (zh) * | 2016-12-23 | 2017-05-31 | 武汉华星光电技术有限公司 | 多晶硅层的制造方法和薄膜晶体管的制造方法 |
US11170990B2 (en) * | 2019-02-19 | 2021-11-09 | Applied Materials, Inc. | Polysilicon liners |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
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DK155233C (da) | 1986-10-14 | 1989-07-10 | Kosan Teknova As | Gasflaskeventil |
US4790278A (en) | 1986-12-10 | 1988-12-13 | Dana Corporation | Centrifugal axle speed governor |
JPS63304670A (ja) | 1987-06-04 | 1988-12-12 | Hitachi Ltd | 薄膜半導体装置の製造方法 |
KR950001437B1 (ko) | 1990-12-28 | 1995-02-24 | 삼성전자주식회사 | 음성부호화방법 |
JP3143967B2 (ja) | 1991-07-09 | 2001-03-07 | カシオ計算機株式会社 | 薄膜トランジスタの製造方法 |
KR100203982B1 (ko) | 1993-03-12 | 1999-06-15 | 야마자끼 순페이 | 반도체장치 및 그의 제작방법 |
KR970002424B1 (ko) | 1994-03-29 | 1997-03-05 | 엘지전자 주식회사 | 후보문자분류방법 |
JP3477836B2 (ja) | 1994-08-05 | 2003-12-10 | カシオ計算機株式会社 | 薄膜トランジスタの製造方法 |
JP3306258B2 (ja) | 1995-03-27 | 2002-07-24 | 三洋電機株式会社 | 半導体装置の製造方法 |
CN1089486C (zh) * | 1995-06-26 | 2002-08-21 | 精工爱普生株式会社 | 形成晶体性半导体膜的方法 |
JPH11261078A (ja) | 1999-01-08 | 1999-09-24 | Seiko Epson Corp | 半導体装置の製造方法 |
JP2001210726A (ja) * | 2000-01-24 | 2001-08-03 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP3832213B2 (ja) | 2000-09-08 | 2006-10-11 | セイコーエプソン株式会社 | 半導体装置の製造方法および電気光学装置の製造方法 |
JP2002261290A (ja) | 2001-03-01 | 2002-09-13 | Sony Corp | 半導体薄膜の形成方法及びそれを用いた薄膜トランジスタの製造方法 |
JP3842083B2 (ja) | 2001-08-03 | 2006-11-08 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ及びその作製方法並びに表示装置 |
JP4201239B2 (ja) | 2001-11-30 | 2008-12-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2004055771A (ja) | 2002-07-18 | 2004-02-19 | Nec Lcd Technologies Ltd | 半導体薄膜の製造方法及びレーザ照射装置 |
-
2004
- 2004-07-05 KR KR1020040052054A patent/KR100666563B1/ko active IP Right Grant
-
2005
- 2005-03-14 JP JP2005071258A patent/JP2006024887A/ja active Pending
- 2005-03-18 US US11/083,203 patent/US7544550B2/en not_active Expired - Fee Related
- 2005-04-06 CN CNB2005100640634A patent/CN100565824C/zh not_active Expired - Fee Related
Non-Patent Citations (2)
Title |
---|
Polycrystalline Silicon Thin-FilmTransistorsFabricatedbyDefectReduction Methods. H. Watakabe and T. Sameshima.IEEE Transactions on Electron Devices,Vol.49 No.12. 2002 |
Polycrystalline Silicon Thin-FilmTransistorsFabricatedbyDefectReduction Methods. H. Watakabe and T. Sameshima.IEEE Transactions on Electron Devices,Vol.49 No.12. 2002 * |
Also Published As
Publication number | Publication date |
---|---|
KR20060003242A (ko) | 2006-01-10 |
JP2006024887A (ja) | 2006-01-26 |
US20060003502A1 (en) | 2006-01-05 |
KR100666563B1 (ko) | 2007-01-09 |
CN1722385A (zh) | 2006-01-18 |
US7544550B2 (en) | 2009-06-09 |
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Effective date of registration: 20090109 Address after: Gyeonggi Do, South Korea Applicant after: Samsung Mobile Display Co., Ltd. Address before: Gyeonggi Do, South Korea Applicant before: Samsung SDI Co., Ltd. |
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