CN100565146C - A kind of flat type piezoelectric six-dimensional force sensor - Google Patents
A kind of flat type piezoelectric six-dimensional force sensor Download PDFInfo
- Publication number
- CN100565146C CN100565146C CNB2008100697208A CN200810069720A CN100565146C CN 100565146 C CN100565146 C CN 100565146C CN B2008100697208 A CNB2008100697208 A CN B2008100697208A CN 200810069720 A CN200810069720 A CN 200810069720A CN 100565146 C CN100565146 C CN 100565146C
- Authority
- CN
- China
- Prior art keywords
- brilliant
- group
- piezoelectric
- piezoelectric unit
- quartz wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Force Measurement Appropriate To Specific Purposes (AREA)
Abstract
The invention belongs to the piezoelectric sensor technical field, relate to a kind of flat type piezoelectric six-dimensional force sensor, it is with in the brilliant cavity that is assembled in the formation of base and cover of 16 piezoelectric units, and extraction electrode, is wired to socket, forms sensor.The brilliant group of these 16 piezoelectric units is evenly distributed on the same circumference of the brilliant group of the piezoelectric unit mounting platform in the pedestal, four brilliant components of the piezoelectric unit that adopts X0 ° of cut type quartz wafer to constitute are distributed on the position of 45 °, 135 °, 225 ° of circumference and 315 °, 12 brilliant groups of the piezoelectric unit that adopts Y0 ° of cut type quartz wafer to constitute are evenly distributed on all the other positions of circumference, form seven piezo crystals groups altogether, obtain seven tunnel output signals.Advantages such as that this six-dimension force sensor has is simple in structure, need not elastic body, dynamic perfromance is good, be easy to miniaturization and microminiaturization, low cost of manufacture, good rigidity do not exist to be coupled between dimension, need not the decoupling zero computing, belong to direct output type six-dimension force sensor.
Description
Technical field
The invention belongs to the piezoelectric sensor technical field, be specifically related to the sensor of the sextuple power of a kind of measurement space.
Background technology
At present, known six-dimension force sensor mainly can be divided into three major types: the first kind is to adopt to paste strainometer or the mode of sintered thick film force sensing resistance (referring to Chinese patent literature CN00119096.2 " a kind of six-dimension force sensor based on the ceramic thick film technology ") on elastic body on the elastic body of complexity, detect elastomeric deformation by sensing element (strainometer or thick film force sensitive resistance) and reflect tested sextuple force information, the elastomer structure complexity of this class six-dimension force sensor, processing difficulties, the processing cost height, strainometer stickup quantity is many, stickup work is heavy, sticking Quality and paste position precision are difficult to guarantee, and all there is coupling between dimension on all directions, need carries out just obtaining tested force information after the decoupling zero computing signal of sensor; Second class is based on the platform-type structure of STWART platform principle of work, strainometer is attached on the support bar of platform or on the resilient movement pair (or be contained in support bar on piezoelectric element), this class sensor is very high to the coherence request of each measuring unit, complex structure, and the size that has is big, the rigidity that has is low, the demarcation difficulty that has, the sensitivity that has is low, the manufacturing cost height that has, it is serious to be coupled between the dimension that has, decoupling zero computing complexity; The 3rd class is to adopt eight or two multidimensional piezoelectric force transducers to be installed (referring to Chinese patent CN101013054 " differential type piezo-electric six-dimensional sensing unit " on force transmission mechanism, CN101078660 " a kind of piezoelectric type hexa-dimensional force sensor "), outer force information is applied directly on each sensor by force transmission mechanism, avoided the influence of elastic body to sensor, there is not coupling between dimension, technology is simple, but this class six-dimension force sensor requires height to the installation accuracy of each sensor, and the consistance of same model sensor is also had relatively high expectations.Known these six-dimension force sensors all belong to space structure at present, having only has the only a few scheme to realize the microminiaturization of six-dimension force sensor by designing complicated MEMS process program in the first kind measuring principle, the second and the 3rd class scheme does not also have to realize microminiaturized at present.
Summary of the invention
The present invention is directed to the prior art above shortcomings, provide a kind of simple in structure, need not elastic body, dynamic perfromance is good, be easy to miniaturization and microminiaturization, low cost of manufacture, good rigidity, do not have coupling between dimension, need not decoupling zero, and be applicable to the flat type piezoelectric six-dimensional force sensor of MEMS technology.
Technical scheme of the present invention is as follows:
A kind of flat type piezoelectric six-dimensional force sensor, it is sensitive element with the quartz wafer, quartz wafer is assembled in the cavity that forms with base and cover, and extraction electrode, be wired to socket, form sensor.
The described quartz wafer that is assembled in the pedestal forms the brilliant group of 16 piezoelectric units altogether, and the brilliant group of these 16 piezoelectric units evenly fixed installation is distributed on the same circumference of the brilliant group of the piezoelectric unit mounting platform in the sensor base.
Wherein there is the brilliant group of four piezoelectric units to constitute by X0 ° of cut type quartz wafer respectively, be distributed on the position of 45 °, 135 °, 225 ° of circumference and 315 °, constitute the 4th, the 5th, the 6th and the 7th piezo crystals group respectively, the sensitive axes of the brilliant group of these piezoelectric units is perpendicular to the working sensor plane.
12 brilliant groups of piezoelectric unit are made of Y0 ° of cut type quartz wafer respectively in addition, 0 °, the 180 ° brilliant groups of locational two piezoelectric units that wherein are distributed in circumference constitute the 1st piezo crystals group, constitute the same radial distribution of the brilliant sensitive axes of organizing of two piezoelectric units of the 1st piezo crystals group, and direction is identical along circumference; Be distributed in 90 °, the 270 ° brilliant groups of locational two piezoelectric units and constitute the 3rd piezo crystals group, constitute the same radial distribution of the brilliant sensitive axes of organizing of two piezoelectric units of the 3rd piezo crystals group, and direction is identical along circumference; Be distributed in 22.5 °, 67.5 °, 112.5 °, 157.5 °, 202.5 °, 247.5 °, 292.5 °, the 337.5 ° brilliant groups of locational eight piezoelectric units and constitute the 2nd piezo crystals group, the sensitive axes that constitutes the brilliant group of eight piezoelectric units of the 2nd piezo crystals group distributes along the tangent line of circumference, and direction is along arranging clockwise or counterclockwise.
Be connected with the 1st socket on the pedestal with lead after two electrode parallel connections of described the 1st piezo crystals group, be connected with the 2nd socket with lead after eight electrode parallel connections of the 2nd piezo crystals group, be connected with the 3rd socket with lead after two electrode parallel connections of the 3rd piezo crystals group, the 4th, 5,6,7 piezo crystals groups electrode separately is connected with 7 sockets with the 4th, 5,6 respectively with lead; Described each lead is distinguished insulation-encapsulated in the filling insulating material layer.
The brilliant group of above-mentioned piezoelectric unit has single chip architecture and to two kinds of forms of assembling structure:
To assembling structure: the brilliant group of each piezoelectric unit adopts two identical quartz wafers that dress is constituted, promptly have 32 bauerite wafers, the brilliant group of described piezoelectric unit directly is fixed on the interior piezoelectric unit crystalline substance of pedestal and organizes (electrode holder of the brilliant group of each piezoelectric unit is between the two bauerite wafers that each piezoelectric unit crystalline substance of formation is organized, and the signal of drawing from each electrode is the negative charge signal) on the same circumference of mounting platform.For the brilliant group of piezoelectric unit is the situation that two identical quartz wafers constitute dress, the sensitive axes of the brilliant group of described piezoelectric unit and the direction of sensitive axes are meant the sensitive axes and the sensitive axes direction of bauerite wafer, the Y-axis direction of the X0 ° of cut type quartz wafer of each time sheet of the described brilliant group of locational piezoelectric unit that is distributed in 45 °, 135 °, 225 ° of circumference and 315 ° entad or centrifugal distribution, the centrifugal or entad distribution of the Y-axis direction of bauerite wafer on each.
Single chip architecture: the brilliant group of each piezoelectric unit adopts a slice quartz wafer, promptly have 16 bauerite wafers, this 16 bauerite wafer is separately fixed on 16 electrodes of insulated electro pole plate, described insulated electro pole plate is installed in brilliant the group on the mounting platform of piezoelectric unit in the pedestal, belong to the corresponding electrode parallel connection respectively of the brilliant group of each piezoelectric unit of same piezo crystals group in 16 electrodes on the insulated electro pole plate, form seven road output signal ends, and continuous by lead respectively with seven corresponding sockets; For the situation of the brilliant group of piezoelectric unit for monolithic quartz wafer formation, the sensitive axes of the brilliant group of described piezoelectric unit and the direction of sensitive axes refer to the sensitive axes and the sensitive axes direction of monolithic quartz wafer, and the Y-axis direction of each X0 ° of cut type quartz wafer of the described brilliant group of locational piezoelectric unit that is distributed in 45 °, 135 °, 225 ° of circumference and 315 ° entad or centrifugal distribution.
Described insulated electro pole plate adopts one, and the brilliant group of the piezoelectric unit that is adhesively fixed thereon, or adopt two, the brilliant group of piezoelectric unit are adhesively fixed on up and down between two insulated electro pole plates.
This six-dimension force sensor has simple in structure, need not elastic body, and dynamic perfromance is good, is easy to miniaturization and microminiaturization, low cost of manufacture, advantages such as good rigidity.Because this sensor adopts the mentality of designing of the brilliant group of symmetric arrangement piezoelectric unit, therefore do not exist between dimension to be coupled, also just need not the decoupling zero computing, belong to direct output type six-dimension force sensor.In addition, because this six-dimension force sensor adopts flat structure, therefore, under existing MEMS technical conditions, just can realize the miniaturization or the microminiaturization of this sensor by the MEMS process program of simplicity of design.This six-dimension force sensor can be used for the measurement of fields such as robotics, Aero-Space to sextuple power/moment information, is particularly suitable for to various motor vehicles, aircraft the real-time measurement of the dynamic perfromance of the seat of installing on the movable machineries such as engineering machinery.
Description of drawings
Fig. 1 is the outside drawing of this sensor;
Fig. 2 is the section of structure of first kind of implementation (being that the brilliant group of piezoelectric unit adopts assembling structure) of this sensor;
Fig. 3 is the section of structure of second kind of implementation (being that the brilliant group of piezoelectric unit adopts single chip architecture) of this sensor;
Fig. 4 is the piezo crystals group layout schematic diagram of first and second kind implementation;
Fig. 5 is the structural representation (numbering on each electrode is corresponding to the numbering of each piezo crystals group) of insulated electro pole plate;
Fig. 6 is the schematic block circuit diagram that this signal of sensor is handled.
Among the figure: 1-the 1st piezo crystals group, 2-the 2nd piezo crystals group, 3-the 3rd piezo crystals group, 4-the 4th piezo crystals group, 5-the 5th piezo crystals group, 6-the 6th piezo crystals group, 7-the 7th piezo crystals group, 8-pedestal, the 9-loam cake, 10-filling insulating material layer, 11-electrode, 12-lead, 131-the 1st socket, 132-the 2nd socket, 133-the 3rd socket, 134-the 4th socket, 135-the 5th socket, 136-the 6th socket, 137-the 7th socket, 14-insulated electro pole plate, the brilliant group of 15-piezoelectric unit mounting platform.
Embodiment
Embodiment 1: referring to Fig. 1, Fig. 2 and Fig. 4, comprise following a few step when making sensor:
The first step, identical eight X0 ° of cut type quartz wafers " to dress " (are promptly taked the Y-axis direction opposed alignment of X0 ° of cut type quartz wafer up and down, it on circuit parallel-connection structure, electrode holder is between two quartz wafers, requiring the signal of drawing of electrode is the negative charge signal), form the brilliant group of four piezoelectric units.
Second step, with identical 24 Y0 ° of cut type quartz wafers " to dress " (promptly is parallel-connection structure on circuit, the signal extraction electrode is clipped between the two bauerite wafers, and requiring the signal of drawing of extraction electrode is the negative charge signal), form the brilliant group of 12 piezoelectric units.
In the 3rd step, the placement scheme (direction of arrow is the direction of the sensitive axes of the brilliant group of each piezoelectric unit) that the sensitive axes of the brilliant group of these 16 piezoelectric units is pressed as shown in the figure evenly fixedly mounts on the same circumference of the brilliant group of the piezoelectric unit mounting platform 15 in the pedestal 8 that is distributed in sensor.It is to be made of identical X0 ° of cut type quartz wafer that the brilliant group of four piezoelectric units is wherein arranged, be distributed on 45 °, 135 °, 225 ° of circumference and the 315 ° of positions, constitute the 4th, the 5th, the 6th and the 7th piezo crystals group 4,5,6 and 7 respectively, the sensitive axes of the brilliant group of these piezoelectric units is perpendicular to the working sensor plane, and the Y-axis direction of an X0 ° of cut type quartz wafer is centrifugal or entad distribute on each of the brilliant group of each piezoelectric unit, and the Y-axis direction of X0 ° of cut type quartz wafer of each time sheet entad or centrifugal distribution.12 brilliant groups of piezoelectric unit are to be made of identical Y0 ° of cut type quartz wafer in addition, 0 °, the 180 ° brilliant groups of locational two piezoelectric units that wherein are distributed in circumference constitute the 1st piezo crystals group 1, constitute the same radial distribution of the brilliant sensitive axes of organizing of two piezoelectric units of the 1st piezo crystals group 1, and direction is identical along circumference; Be distributed in 90 °, the 270 ° brilliant groups of locational two piezoelectric units and constitute the 3rd piezo crystals group 3, constitute the same radial distribution of the brilliant sensitive axes of organizing of two piezoelectric units of the 3rd piezo crystals group 3, and direction is identical along circumference; Be distributed in 22.5 °, 67.5 °, 112.5 °, 157.5 °, 202.5 °, 247.5 °, 292.5 °, the 337.5 ° brilliant groups of locational eight piezoelectric units and constitute the 2nd piezo crystals group 2, the sensitive axes that constitutes the brilliant group of eight piezoelectric units of the 2nd piezo crystals group 2 distributes along the tangent line of circumference, and direction is along arranging clockwise or counterclockwise.
The 4th step will couple together with lead 12 and the 2nd socket 132 after eight electrode parallel connections of the 2nd piezo crystals group 2, and with the ground floor middle (this be the ground floor of insulation filling material, i.e. bottom) of lead 12 insulation-encapsulated at filling insulating material layer 10.
The 5th the step, will couple together with lead 12 and the 1st socket 131 after two electrode parallel connections of the 1st piezo crystals group 1, and with lead 12 insulation-encapsulated in the middle of the second layer of filling insulating material layer 10.
The 6th step will couple together with lead 12 and the 3rd socket 133 after two electrode parallel connections of the 3rd piezo crystals group 3, and with the three layer centre of lead 12 insulation-encapsulated at filling insulating material layer 10.
The 7th step, the 4th, 5,6,7 electrode of the 4th, 5,6,7 piezo crystals groups 4,5,6,7 is corresponding with it respectively with lead 12 sockets 134,135,136,137 couple together, and these are encapsulated in the 4th layer of centre of filling insulating material layer 10 with connecting lead 12 mutually insulateds.
The 8th step after covering loam cake 9 on the pedestal 8 and applying certain pretightning force, was connected loam cake 9 and seals with pedestal 8, promptly form this flat type piezoelectric six-dimensional force sensor.
Piezo crystals group layout as shown in Figure 4, be the quartz wafer layout as shown in Figure 4,16 bauerite wafers are by same circle distribution, the sensitive axes direction of each quartz wafer as shown by arrows, wherein the 4th, 5,6,7 piezo crystals groups 4,5,6,7 all adopt identical X0 ° of cut type quartz wafer, the 1st, 2,3 piezo crystals groups all adopt identical Y0 ° of cut type quartz wafer, the sensitive axes that requires X0 ° of cut type quartz wafer is perpendicular to the working sensor plane, its Y-axis direction entad or centrifugal distribution, the layout of Y0 ° of cut type quartz wafer that is distributed in other position is identical with embodiment 1.
Referring to Fig. 3, circumferential size and quartz wafer size according to the brilliant group of layout piezoelectric unit, with teflon circular ring plate that the diameter of the brilliant group of piezoelectric unit mounting platform 15 in the sensor base 8 equates on plate 16 electrodes, and the electrode that will belong to same piezo crystals group is communicated with, formation has the insulated electro pole plate 14 of seven road output signal ends, referring to Fig. 5.Earlier quartz wafer is fixed on up and down between two identical insulated electro pole plates 14 by piezo crystals group placement scheme shown in Figure 4, then these the two insulated electro pole plates that are fixed with quartz wafer are fixed on the brilliant group of the piezoelectric unit mounting platform 15 in the sensor base 8, seven road output signal ends are connected (and with these lead 12 mutually insulateds be encapsulated in the filling insulating material layer 10) respectively with lead 12 with corresponding 1-the 7th socket 131-137, after covering loam cake 9 and applying certain pretightning force, loam cake 9 is connected with pedestal 8 seals, also can form this flat type piezoelectric six-dimensional force sensor.
What the sensor construction shown in Fig. 3 adopted is the scheme of two insulated electro pole plates, also can only adopt an insulated electro pole plate in actual applications, earlier quartz wafer is fixed on the insulated electro pole plate 14 by piezo crystals group placement scheme shown in Figure 4, the insulated electro pole plate that then this piece is fixed with quartz wafer is fixed on sensor base 8 interior piezoelectric unit crystalline substances and organizes on the mounting platform 15, seven road output signal ends are connected (and with these lead 12 mutually insulateds be encapsulated in the filling insulating material layer 10) respectively with lead 12 with corresponding 1-the 7th socket 131-137, after covering loam cake 9 and applying certain pretightning force, loam cake 9 is connected with pedestal 8 seals, also can form this flat type piezoelectric six-dimensional force sensor.
During use seven sockets of No. seven charge amplifiers with this flat type piezoelectric six-dimensional force sensor are linked to each other, seven tunnel output signals are connected with the circuit by the design of as shown in Figure 6 sensor output signal treatment circuit theory diagram just can obtain six road voltage signals, this is six tunnel power/moment information, and the measuring principle of this flat type piezoelectric six-dimensional force sensor can be described with following relationship:
Q
i(i=1, the numbering of the piezo crystals group that 2,3,4,5,6,7 expressions are corresponding) represents the quantity of electric charge on each piezo crystals group, F
X, F
Y, F
Z, M
X, M
Y, M
ZRepresent the sextuple power/moment of detected space respectively.
Claims (6)
1, a kind of flat type piezoelectric six-dimensional force sensor, described sensor are sensitive element with the quartz wafer, quartz wafer be assembled in the cavity that forms with base and cover, and extraction electrode, be wired to socket, form sensor; It is characterized in that:
The described quartz wafer that is assembled in the pedestal forms the brilliant group of 16 piezoelectric units altogether, and the brilliant group fixed installation of these 16 piezoelectric units also is evenly distributed on the same circumference of the brilliant group of the piezoelectric unit mounting platform in the sensor base;
Wherein there is the brilliant group of four piezoelectric units to constitute by X0 ° of cut type quartz wafer respectively, be distributed on the position of 45 °, 135 °, 225 ° of circumference and 315 °, constitute the 4th, the 5th, the 6th and the 7th piezo crystals group respectively, the sensitive axes of the brilliant group of these four piezoelectric units is perpendicular to the working sensor plane;
12 brilliant groups of piezoelectric unit are made of Y0 ° of cut type quartz wafer respectively in addition, wherein, 0 °, the 180 ° brilliant groups of locational two piezoelectric units that are distributed in circumference constitute the 1st piezo crystals group, constitute the same radial distribution of the brilliant sensitive axes of organizing of two piezoelectric units of the 1st piezo crystals group, and direction is identical along circumference; Be distributed in 90 °, the 270 ° brilliant groups of locational two piezoelectric units and constitute the 3rd piezo crystals group, constitute the same radial distribution of the brilliant sensitive axes of organizing of two piezoelectric units of the 3rd piezo crystals group, and direction is identical along circumference; Be distributed in 22.5 °, 67.5 °, 112.5 °, 157.5 °, 202.5 °, 247.5 °, 292.5 °, the 337.5 ° brilliant groups of locational eight piezoelectric units and constitute the 2nd piezo crystals group, the sensitive axes that constitutes the brilliant group of eight piezoelectric units of the 2nd piezo crystals group distributes along the tangent line of circumference, and direction is along arranging clockwise or counterclockwise;
Be connected with the 1st socket on the pedestal with lead after two electrode parallel connections of described the 1st piezo crystals group, be connected with the 2nd socket with lead after eight electrode parallel connections of the 2nd piezo crystals group, be connected with the 3rd socket with lead after two electrode parallel connections of the 3rd piezo crystals group, the 4th, 5,6 are connected with 7 sockets with the 4th, 5,6 respectively with lead with 7 piezo crystals groups electrode separately; Described each lead is distinguished insulation-encapsulated in the filling insulating material layer.
2, flat type piezoelectric six-dimensional force sensor according to claim 1, it is characterized in that: the brilliant group of described each piezoelectric unit adopts two identical quartz wafers that dress is constituted, and the brilliant group of described piezoelectric unit directly is fixed on the same circumference of the brilliant group of the piezoelectric unit mounting platform in the pedestal; For the brilliant group of piezoelectric unit is the situation that two identical quartz wafers constitute dress, and the sensitive axes of the brilliant group of described piezoelectric unit and the direction of sensitive axes are meant the sensitive axes and the sensitive axes direction of bauerite wafer.
3, flat type piezoelectric six-dimensional force sensor according to claim 2, it is characterized in that: be the situation of identical two bauerite wafers the dress formation for the brilliant group of piezoelectric unit, promptly have 32 bauerite wafers, the Y-axis direction of the X0 ° of cut type quartz wafer of each time sheet of the described brilliant group of locational four piezoelectric units that is distributed in 45 °, 135 °, 225 ° of circumference and 315 ° entad or centrifugal distribution, the Y-axis direction of an X0 ° of cut type quartz wafer is centrifugal or entad distribute on each, but relative up and down two not in the same way.
4, flat type piezoelectric six-dimensional force sensor according to claim 1, it is characterized in that: the brilliant group of described each piezoelectric unit adopts a slice quartz wafer, promptly have 16 bauerite wafers, this 16 bauerite wafer is separately fixed on 16 electrodes of insulated electro pole plate, described insulated electro pole plate is installed in brilliant the group on the mounting platform of piezoelectric unit in the pedestal, belong to the corresponding electrode parallel connection respectively of the brilliant group of each piezoelectric unit of same piezo crystals group in 16 electrodes on the insulated electro pole plate, form seven road output signal ends, and continuous by lead with seven corresponding sockets; For the situation that the brilliant group of piezoelectric unit constitutes for the monolithic quartz wafer, the sensitive axes of the brilliant group of described piezoelectric unit and the direction of sensitive axes refer to the sensitive axes and the sensitive axes direction of monolithic quartz wafer.
5, flat type piezoelectric six-dimensional force sensor according to claim 4, it is characterized in that: for the situation that the brilliant group of piezoelectric unit constitutes for the monolithic quartz wafer, the Y-axis direction of described brilliant each X0 ° of cut type quartz wafer of organizing of locational piezoelectric unit that is distributed in 45 °, 135 °, 225 ° of circumference and 315 ° entad or centrifugal distribution.
6, the flat type piezoelectric six-dimensional force sensor of stating according to claim 5, it is characterized in that: described insulated electro pole plate adopts one, the brilliant group of the piezoelectric unit that is adhesively fixed thereon, or the insulated electro pole plate adopts two, the brilliant group of piezoelectric unit are adhesively fixed on up and down between two insulated electro pole plates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2008100697208A CN100565146C (en) | 2008-05-22 | 2008-05-22 | A kind of flat type piezoelectric six-dimensional force sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2008100697208A CN100565146C (en) | 2008-05-22 | 2008-05-22 | A kind of flat type piezoelectric six-dimensional force sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101285723A CN101285723A (en) | 2008-10-15 |
| CN100565146C true CN100565146C (en) | 2009-12-02 |
Family
ID=40058041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2008100697208A Expired - Fee Related CN100565146C (en) | 2008-05-22 | 2008-05-22 | A kind of flat type piezoelectric six-dimensional force sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100565146C (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101750173B (en) * | 2010-01-21 | 2011-04-20 | 重庆大学 | Piezoelectric type six-dimensional force sensor |
| CN102288334B (en) * | 2011-07-28 | 2014-07-30 | 济南大学 | Parallel piezoelectric six-dimensional large force sensor |
| CN104677543B (en) * | 2015-01-29 | 2019-11-29 | 重庆大学 | Using piezoelectric six-dimension power/torque sensor of 6 groups of dynamometry sensing units |
| CN104977104B (en) * | 2015-07-13 | 2017-04-12 | 大连理工大学 | Piezoelectric small-range large-range ratio force-measuring device |
| CN105352634B (en) * | 2015-12-02 | 2018-05-08 | 中国工程物理研究院电子工程研究所 | A kind of manufacture method of the universal shock transducer of integrated piezoelectric formula and its piezoelectric sensing element |
| CN112611499B (en) * | 2019-09-18 | 2022-01-28 | 马洪文 | Method for measuring micro displacement of load platform of multi-dimensional force sensor and method for mounting measuring sensitive element |
| CN111693198B (en) * | 2020-05-15 | 2021-06-01 | 吉林大学 | Double-plate type six-dimensional force torque sensor |
| CN111958320B (en) * | 2020-08-06 | 2022-02-08 | 北京理工大学 | Integrated real-time monitoring system and method for tool handle |
-
2008
- 2008-05-22 CN CNB2008100697208A patent/CN100565146C/en not_active Expired - Fee Related
Non-Patent Citations (4)
| Title |
|---|
| 三向压电力传感器向间干扰的分析和消除. 谢锋.安徽工学院学报，第13卷第4期. 1994 |
| 三向压电力传感器向间干扰的分析和消除. 谢锋.安徽工学院学报，第13卷第4期. 1994 * |
| 基于快速转弯微小机器人系统的研究. 刘京诚等.重庆大学学报，第27卷第3期. 2004 |
| 基于快速转弯微小机器人系统的研究. 刘京诚等.重庆大学学报，第27卷第3期. 2004 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101285723A (en) | 2008-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100565146C (en) | A kind of flat type piezoelectric six-dimensional force sensor | |
| EP0311695B1 (en) | Force and moment detector using resistor | |
| Chu et al. | Silicon three-axial tactile sensor | |
| CN101750173B (en) | Piezoelectric type six-dimensional force sensor | |
| CN101730841B (en) | Suspended membrane pressure sensing array | |
| CN112556895B (en) | Flexible pressure sensor, preparation method, sensing system and flexible electronic skin | |
| CN102128953B (en) | Capacitive micro-acceleration sensor with symmetrically inclined folded beam structure | |
| CN103941041B (en) | A kind of single mass three-shaft mems accelerometer of three-frame structure | |
| CN102435775B (en) | Strain type three-dimensional acceleration sensor | |
| CN104677543B (en) | Using piezoelectric six-dimension power/torque sensor of 6 groups of dynamometry sensing units | |
| CN103292939B (en) | Spoke and central pin column combined type three-dimensional force sensor | |
| JP4335545B2 (en) | Sensor for detecting both pressure and acceleration and manufacturing method thereof | |
| CN102288334A (en) | Parallel piezoelectric six-dimensional large force sensor | |
| CN109781328A (en) | A kind of six-dimension force sensor of eight girder constructions | |
| CN204758191U (en) | Three -dimensional power pressure sensor of contact parallel -plate | |
| CN100487400C (en) | Differential type piezo-electric six-dimensional sensing unit | |
| CN100565213C (en) | A kind of piezoelectric six-dimension acceleration sensor | |
| CN211603247U (en) | Three-axis acceleration sensor | |
| CN108761128B (en) | Piezoelectric vibration excitation self-diagnosis MEMS accelerometer core and accelerometer | |
| CN204788762U (en) | Differential three -dimensional power pressure sensor of contact parallel -plate | |
| CN100489475C (en) | Piezoelectric type hexa-dimensional force sensor | |
| CN114112159B (en) | Resistance type flexible three-dimensional force sensor based on spring-shaped sensitive unit | |
| CN208766198U (en) | Piezoelectric vibration motivates self diagnosis mems accelerometer watch core and accelerometer | |
| JP2971610B2 (en) | Force / acceleration / magnetism detecting device and method of manufacturing the same | |
| CN204788742U (en) | Three -dimensional pressure sensor of circular ring type contact parallel -plate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091202 Termination date: 20100522 |