CN100555642C - Optical pickocff and preparation method thereof - Google Patents
Optical pickocff and preparation method thereof Download PDFInfo
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- CN100555642C CN100555642C CNB2008100976653A CN200810097665A CN100555642C CN 100555642 C CN100555642 C CN 100555642C CN B2008100976653 A CNB2008100976653 A CN B2008100976653A CN 200810097665 A CN200810097665 A CN 200810097665A CN 100555642 C CN100555642 C CN 100555642C
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Abstract
The invention discloses a kind of optical pickocff and preparation method thereof, this optical pickocff comprises a Silicon-rich dielectric photo-sensitive cell and a signal read element.Silicon-rich dielectric photo-sensitive cell comprises that one first electrode, one second electrode and a sensitization silicic dielectric layer are arranged between first electrode and second electrode.First electrode of signal read element and Silicon-rich dielectric photo-sensitive cell electrically connects, in order to read the photosignal that the sensitization silicic dielectric layer produces.
Description
Technical field
The invention relates to a kind of optical pickocff and preparation method thereof, refer to that especially a kind of use silicic dielectric layer (Silicon rich dielectric layer) is as Silicon-rich dielectric optical pickocff of photosensitive layer and preparation method thereof.
Background technology
Because the application of optical-fibre communications and all types of TFT thin film transistor monitor is weeded out the old and bring forth the new, and makes the demand of optical pickocff or receiver increase rapidly.Existing optical pickocff connects face sensor based on the PN (doping of just mixing/bear) that utilizes three A family elements and five A family element materials to form or PIN (just mixing/do not mix/negative the doping) connects face sensor, it is non-direct gap (indirect energy gap) framework that yet PN/PIN connects face sensor, therefore light receiving efficiency is on the low side, and be subjected to the influence of non-target light source easily, make signal noise bigger.In addition in the TFT thin film transistor monitor, PN/PIN connects on three A families that face sensor uses and five A family materials and the thin-film transistor technology has compatibility issue, and position and peripheral circuit that PN/PIN connects face sensor adjoin, not only phase mutual interference easily also causes the choice between aperture opening ratio and the sensitization usefulness in design.Based on above-mentioned various reasons, PN/PIN connects face sensor can't satisfy the application of transducer on photoelectric field, and therefore the transducer of a new generation has become the emphasis of research and development.
Summary of the invention
Optical pickocff that provides a kind of silicic dielectric layer and preparation method thereof is provided one of purpose of the present invention, to promote the application and the compatibility of optical pickocff.
For reaching above-mentioned purpose, the invention provides a kind of optical pickocff, it comprises a Silicon-rich dielectric photo-sensitive cell and a signal read element.This Silicon-rich dielectric photo-sensitive cell comprises that one first electrode, one second electrode and a sensitization silicic dielectric layer are arranged between this first electrode and this second electrode, wherein comprises the silicon oxide layer (SiOx) of a Silicon-rich, the silicon nitride layer (SiNy) of a Silicon-rich, the silicon oxynitride layer (SiOxNy) of a Silicon-rich, the oxidation of coal silicon layer (SiOxCz) of a Silicon-rich or carborundum (SiCz) layer of a Silicon-rich in this sensitization silicic dielectric layer.This first electrode of this signal read element and this Silicon-rich dielectric photo-sensitive cell electrically connects, in order to read the photosignal that this sensitization silicic dielectric layer produces.
For reaching above-mentioned purpose, the present invention provides a kind of manufacture method of optical pickocff in addition, and it comprises the following steps.One substrate at first is provided, and on this substrate, forms a signal read element.Then on this substrate, form one first electrode, electrically connect this signal read element.On this first electrode, form a sensitization silicic dielectric layer subsequently, wherein include a plurality of silicon nanocrystal grains in this sensitization silicic dielectric layer.On this sensitization silicic dielectric layer, form one second electrode afterwards again.
Optical pickocff with silicic dielectric layer of the present invention utilizes silicic dielectric layer as photosensitive layer, it is aided with silicon nanocrystal grain framework as light absorption and current conversion media, therefore the conventional P N/PIN compared to the lattice silicon that uses connects face sensor, and it is higher that the silicon nanocrystal grain has direct gap and its absorption efficiency and conversion efficiency.In addition, manufacture method and the standard semiconductor technology of the present invention with optical pickocff of silicic dielectric layer has high compatibility.
Description of drawings
Fig. 1 is the schematic diagram of a preferred embodiment of optical pickocff of the present invention;
Fig. 2 is integrated in the schematic diagram of an embodiment of a display unit for optical pickocff of the present invention;
Fig. 3 is integrated in the schematic diagram of another embodiment of a display unit for optical pickocff of the present invention;
Fig. 4 to Fig. 7 is the manufacture method schematic diagram of optical pickocff of the present invention;
Fig. 8 is the experimental result picture of optical pickocff of the present invention.
[main element symbol description]
10 optical pickocffs, 20 Silicon-rich dielectric photo-sensitive cells
22 first electrodes, 24 second electrodes
26 sensitization silicic dielectric layers, 30 signal read elements
40 display unit, 42 array base paltes
44 colored filter substrates, 46 liquid crystal layers
48 non-display areas, 50 viewing areas
52 grids, 54 data wires
56 pixel electrodes, 58 frame glue
60 substrates, 62 signal read elements
64 first electrodes, 66 sensitization silicic dielectric layers
68 second electrodes
Embodiment
For further understanding purpose of the present invention, scheme and effect, hereinafter the spy enumerates several preferred embodiments of the present invention, and cooperates appended icon, component symbol etc., describe in detail constitution content of the present invention and the effect desiring to reach.
Please refer to Fig. 1.Fig. 1 is the schematic diagram of a preferred embodiment of optical pickocff of the present invention.As shown in Figure 1, the optical pickocff 10 of present embodiment comprises a Silicon-rich dielectric (silicon-rich dielectric) photo-sensitive cell 20 and a signal read element (read out device) 30.The similar capacitance structure of Silicon-rich dielectric photo-sensitive cell 20, comprise one first electrode 22, one second electrode 24, and one sensitization silicic dielectric layer (photo-sensitive silicon-rich dielectric layer) 26 be arranged between first electrode 22 and second electrode 24, wherein this sensitization silicic dielectric layer 26 includes a plurality of silicon nanocrystal grains (nanocrystallinesilicon).Wherein, first electrode 22 and second electrode, 24 one of them preferable transparency electrode that comprise, or constituted by transparency electrode.In present embodiment, silicon nanocrystal grain photo-sensitive cell 20 can be arranged at the top of signal read element 30, and first electrode 24 electrically connects with signal read element 30.In addition, signal read element 30 can be the element of any existing tool signal read functions, thin-film transistor signal read element for example, first electrode 22 of itself and Silicon-rich dielectric photo-sensitive cell 20 electrically connects, in order to read the photosignal that sensitization silicic dielectric layer 26 produces.
The sensitization silicic dielectric layer 26 of present embodiment includes a plurality of silicon nanocrystal grains, wherein the silicon nanocrystal grain is the direct gap framework, and the energy gap of sensitization silicic dielectric layer 26 is between 1.2 to 4 electron-volts, therefore connect the lattice silicon that face sensor uses compared to conventional P N/PIN, the light receiving efficiency of silicon nanocrystal grain (absorption usefulness) is higher with conversion efficiency.The material of sensitization silicic dielectric layer 26 uses the formed silica-rich material layer of Silicon-rich compound, and wherein the siliceous ratio of Silicon-rich compound is greater than the proper stoichiometric ratio (stoichiometric ratio) of silicon compound, and formation Silicon-rich compound.With silicon oxide compound (SiOx) is example, and the proper ratio of silicon compound is silicon dioxide (SiO
2), wherein silicone content is excessive for example surpasses 1/3rd and form Silicon-rich compound (SiOx), and x is between 0.1 to 2.In the present embodiment, sensitization silicic dielectric layer 26 can be not have amorphous phase (amorphous phase) silicic dielectric layer that includes nano particle kenel (Non-nanoparticale-type), and the diameter of the silicon nanocrystal grain that also can comprise in the sensitization silicic dielectric layer 26 is between 0.5～200 nanometer in addition.The material of sensitization silicic dielectric layer 26 is selected the silicon oxide layer (SiOx) of Silicon-rich, the silicon nitride layer (SiNy) of Silicon-rich, the silicon oxynitride layer (SiOxNy) of Silicon-rich, the oxidation of coal silicon layer (SiOxCz) of Silicon-rich or carborundum (SiCz) layer of Silicon-rich for use, or the lamination of above-mentioned material.If the rich silicon nitride layer (molecular formula is SiNy) of the material selection silicon of sensitization silicic dielectric layer 26, then y is greater than 0.75 and less than 1.33, and if the material selection Silicon-rich silicon oxynitride layer (molecular formula is SiOxNy) of sensitization silicic dielectric layer 26, then x is between 0.1 to 2, and y is between 0.1 to 1.33_.If the material selection Silicon-rich oxidation of coal silicon layer of sensitization silicic dielectric layer 26, then its molecular formula is SiOxCz, and x is between 0.1 to 2, and z is between 0.1 to 1.The sensitization silicic dielectric layer 26 that forms, silicon oxide layer (SiOx) with Silicon-rich is an example, its refractive index (refractive index) is approximately between 1.5 to 3.75, silicon nitride layer (SiNy) with Silicon-rich is an example, its refractive index is approximately between 1.7 to 3.8, silicon oxynitride layer (SiOxNy) with Silicon-rich is an example, and its refractive index is approximately between 1.6 to 3.8.The material of sensitization silicic dielectric layer 26 is except above-mentioned Silicon-rich compound, and sensitization silicic dielectric layer 26 also can use other Silicon-rich compound.
In the present embodiment, first electrode 22 is selected a metal electrode for use, and second electrode 26 is selected a transparency electrode for use, but the light (front lighting) injected by second electrode, 26 directions of Silicon-rich dielectric photo-sensitive cell 20 sensings by this, the light of being injected by first electrode, 22 directions (back side light) then can be covered by first electrode 22, disturbs and can avoid producing.When front lighting shines sensitization silicic dielectric layer 26, can inspire electronics-electric hole to and form photoelectric current, and photoelectric current can be signal read element 30 and reads.
Please refer to Fig. 2.Fig. 2 is integrated in the schematic diagram of an embodiment of a display unit for optical pickocff of the present invention.As shown in Figure 2, in the present embodiment, optical pickocff 10 is integrated in the display unit 40 (a for example thin-film transistor LCD device), and wherein display unit 40 comprises that array basal plate 42, a colored filter substrate 44 and a liquid crystal layer 46 are provided with therebetween.Display unit 40 comprises a non-display area 48 and a viewing area 50, and wherein optical pickocff 10 is arranged in the non-display area 48.Optical pickocff 10 in display unit 40 as the usefulness of ambient light sensor (ambient light sensor), but the brightness of ambient light changes and the backlight illumination of change display unit 40 when display unit 40 runnings by this, makes the brightness optimization of display frame.What deserves to be explained is optical pickocff 10 making can with the process integration of thin-film transistor LCD device, therefore signal read element 30 can be made on the array base palte 42 of display unit 40, and with the thin-film transistor technology or the peripheral circuit process integration of the viewing area 48 of display unit 40.For example, the grid 32 of signal read element 30 can with the process integration of the grid 52 of the thin-film transistor of viewing area 48.In addition, be arranged at signal read element 30 tops 20 of Silicon-rich dielectric photo-sensitive cells can with the dot structure process integration of display unit 40.For example in the present embodiment, first electrode 22 of silicon nanocrystal photo-sensitive cell 20 can be metal electrode, and can then can be transparency electrode with process integration second electrode 24 of the data wire 54 of the thin-film transistor of viewing area 44, and with the process integration of the pixel electrode 56 of viewing area 48.In addition, in the present embodiment, display unit 40 has a frame glue 58 and is arranged between array base palte 42 and the colored filter substrate 44, and is arranged at the outside of frame glue 58 as the optical pickocff 10 of ambient light sensor.
Please refer to Fig. 3.Fig. 3 is integrated in the schematic diagram of another embodiment of a display unit for optical pickocff of the present invention, wherein for comparing the difference of two embodiment, two embodiment use similar elements symbol mark, and following only not existing together at two embodiment be illustrated, and do not repeat to give unnecessary details and do not do other.As shown in Figure 3, do not exist together in the present embodiment, be arranged at the inboard of frame glue 58, but not embodiment is arranged at the outside of frame glue 58 as described above as the optical pickocff 10 of ambient light sensor with previous embodiment.
Refer again to Fig. 4 to Fig. 7.Fig. 4 to Fig. 7 is the manufacture method schematic diagram of optical pickocff of the present invention.As shown in Figure 4, one substrate 60 at first is provided, and on substrate 60, form a signal read element 62, wherein signal read element 62 is a thin-film transistor signal read element in present embodiment, but is not limited to this and visual circuit design is different and be other all types of signal read elements.
As shown in Figure 5, then on substrate 60 and signal read element 62, form one first electrode 64, and make an end points (node) of first electrode, 64 electric connection signal read elements 62, for example source electrode.In present embodiment, first electrode 64 is selected metal electrode for use, and its material can be any suitable metal, and utilizes physical vapour deposition (PVD), chemical vapour deposition (CVD) or alternate manner to form.
As shown in Figure 6, on first electrode 64, form a sensitization silicic dielectric layer 66 subsequently, and make and include the silicon nanocrystal grain of diameter in the sensitization silicic dielectric layer 66 between 0.5～200 nanometer.Sensitization silicic dielectric layer 66 of the present invention for example can be silicon-rich silicon nitride layer or Silicon-rich silicon oxynitride layer, no matter and silicon-rich silicon nitride layer or Silicon-rich silicon oxynitride layer all can utilize the electricity slurry to increase chemical vapor deposition method formation, but process conditions are different, below be illustrated at the generation type of silicon-rich silicon nitride layer or two kinds of materials of Silicon-rich silicon oxynitride layer respectively, but not as limit:
1. use the silicon-rich silicon nitride layer as the sensitization silicic dielectric layer:
Carry out an electricity slurry and increase chemical vapor deposition method formation silicon rich nitride layer, wherein:
Reacting gas: silicomethane (SiH
4Silane), and nitrogen oxygen source gas, wherein the ratio of silicomethane and nitrogen source gas is between 15 to 1, and nitrogen source gas can be ammonia (NH
3) or nitrogen (N
2) wherein one of at least; Or other nitrogenous gas;
Reaction temperature: between 250 to 400 ℃;
Power up and down: between 300 to 1700W;
Pressure: 800 to 1500mtorr; And
Reaction time: 15 to 120sec.
Under above-mentioned process conditions, can utilize the electricity slurry to increase chemical vapor deposition method and form the silicon-rich silicon nitride layer, its molecular formula is SiNx, and x is between 0.75 to 1.33.
2. use the Silicon-rich silicon oxynitride layer as the sensitization silicic dielectric layer:
Carry out an electricity slurry and increase chemical vapor deposition method formation silicon rich nitride layer, wherein:
Reacting gas: silicomethane, and nitrogen oxygen source gas, and the ratio of silicomethane and nitrogen oxygen source gas is between 5 to 0.3, the nitrogen oxygen gas of originating can be for example nitrous oxide; Nitrous oxide, and ammonia, nitrogen or oxygen are wherein one of at least; Ammonia or nitrogen wherein one of at least, and oxygen; Or other nitrogenous and oxygen containing gas;
Reaction temperature: between 250 to 400 ℃;
Power up and down: 300 to 1700W;
Pressure: 800 to 1500mtorr; And
Reaction time: 15 to 120sec.
Under above-mentioned process conditions, increase chemical vapor deposition method by electricity slurry and can form the Silicon-rich silicon oxynitride layer, its molecular formula is SiOxNy, and x is between 0.1 to 2, y is between 0.1 to 1.33.
Utilize above-mentioned electricity slurry to increase chemical vapor deposition method and can be formed directly in amorphous sensitization silicic dielectric layer 66, or contain the sensitization silicic dielectric layer 66 of silicon nanocrystal grain.After forming sensitization silicic dielectric layer 66, optionally carry out tempering process, for example be heating tempering or laser tempering technology, in sensitization silicic dielectric layer 66, form the silicon nanocrystal grain, or increase the size of silicon nanocrystal grain in the sensitization silicic dielectric layer 66, make the photosensitive effect of sensitization silicic dielectric layer 66 better.
As shown in Figure 7, on sensitization silicic dielectric layer 66, form one second electrode 68 at last.In present embodiment, second electrode 68 is selected transparency electrode for use, and its material can be any suitable electrically conducting transparent material, and utilizes physical vapour deposition (PVD), chemical vapour deposition (CVD) or alternate manner to form.
With optical pickocff of the present invention the varying environment luminous intensity is carried out sensing, experimental result as shown in Figure 8, the measured photoelectric current of IphotoN22EL curve display optical pickocff increases with ambient light intensity in icon, in addition SNRn22ELA curve representation signal to noise ratio (Signal Noise Ratio; SNR), just photoelectric current show among the figure that SNR increases and increases along with luminous intensity, so ambient light intensity is stronger to the ratio of dark current (Iphoto/Idark), and the sensitivity of optical pickocff of the present invention is higher.As shown in Figure 8, optical pickocff of the present invention has better light sensing effect.
In sum, optical pickocff of the present invention and preparation method thereof has following characteristics:
1. therefore the preferable the superiors that are arranged at of Silicon-rich dielectric photo-sensitive cell, and not adjacent with peripheral circuit can reduce mutual interference mutually between peripheral circuit and Silicon-rich dielectric photo-sensitive cell, and can promote aperture opening ratio.
2. the preferable the superiors that are arranged at of Silicon-rich dielectric photo-sensitive cell, so light are suffered stops less and can improve absorptivity.
3. use silicon nanocrystal grain framework auxiliary as light absorption and current conversion media, therefore the conventional P N/PIN compared to the lattice silicon that uses connects face sensor, and it is higher that the silicon nanocrystal grain has direct gap and its absorption efficiency and conversion efficiency.
4. the bottom electrode of Silicon-rich dielectric photo-sensitive cell (first electrode) is a transparency electrode for metal electrode top electrode (second electrode), therefore the light (front lighting) of receiving plane is injected and reflected to the light (back side light) that metal electrode can completely cut off non-receiving plane fully when running, so can avoid interference and strengthen the assimilation effect to the light of receiving plane.
5. the present invention utilizes silicic dielectric layer as photosensitive layer, and itself and standard semiconductor technology have high compatibility.
6. the present invention utilizes low temperature (being lower than 400 ℃) electricity slurry to increase chemical vapor deposition method and makes the sensitization silicic dielectric layer, so can utilize glass substrate or plastic base as substrate, therefore can integrate with display unit such as low-temperature polysilicon film transistor LCD.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (31)
1. an optical pickocff is characterized in that, comprising:
One Silicon-rich dielectric photo-sensitive cell, this Silicon-rich dielectric photo-sensitive cell comprises:
One first electrode;
One second electrode; And
One sensitization silicic dielectric layer is arranged between this first electrode and this second electrode; And
One signal read element, this first electrode of this signal read element and this Silicon-rich dielectric photo-sensitive cell electrically connects, in order to read the photosignal that this sensitization silicic dielectric layer produces.
2, optical pickocff as claimed in claim 1 is characterized in that, this sensitization silicic dielectric layer comprises an amorphous phase silicic dielectric layer.
3. optical pickocff as claimed in claim 1 is characterized in that, includes a plurality of silicon nanocrystal grains in this sensitization silicic dielectric layer.
4. optical pickocff as claimed in claim 1 is characterized in that, this Silicon-rich dielectric photo-sensitive cell is arranged at the top of this signal read element.
5. optical pickocff as claimed in claim 1 is characterized in that, this first electrode is a metal electrode, and this second electrode is a transparency electrode.
6. optical pickocff as claimed in claim 3 is characterized in that, the diameter of this silicon nanocrystal grain of this sensitization silicic dielectric layer is between 0.5 to 200 nanometer.
7. optical pickocff as claimed in claim 1 is characterized in that, this signal read element comprises a thin-film transistor signal read element.
8. optical pickocff as claimed in claim 1 is characterized in that this optical pickocff comprises an ambient light sensor, is arranged in the non-display area of a display unit.
9. optical pickocff as claimed in claim 8 is characterized in that, this display unit has a frame glue, and this ambient light sensor is arranged at the outside of this frame glue.
10. optical pickocff as claimed in claim 8 is characterized in that, this display unit has a frame glue, and this ambient light sensor is arranged at the inboard of this frame glue.
11. optical pickocff as claimed in claim 1 is characterized in that, this sensitization silicic dielectric layer is a silicon-rich silicon nitride layer, and the molecular formula of this silicon-rich silicon nitride layer is SiNy, and y is greater than 0.75 and less than 1.33.
12. optical pickocff as claimed in claim 1 is characterized in that, this sensitization silicic dielectric layer is a Silicon-rich silicon oxynitride layer, and the molecular formula of this Silicon-rich silicon oxynitride layer is SiOxNy, and x is between 0.1 to 2, and y is between 0.1 to 1.33.
13. optical pickocff as claimed in claim 1 is characterized in that, the energy gap of this sensitization silicic dielectric layer is between 1.2 to 4 electron-volts.
14. optical pickocff as claimed in claim 1 is characterized in that, the refractive index of this sensitization silicic dielectric layer is between 1.5 to 3.8.
15. the manufacture method of an optical pickocff is characterized in that, comprising:
One substrate is provided, and on this substrate, forms a signal read element;
On this substrate, form one first electrode, electrically connect this signal read element;
On this first electrode, form a sensitization silicic dielectric layer, wherein include a plurality of silicon nanocrystal grains in this sensitization silicic dielectric layer; And
On this sensitization silicic dielectric layer, form one second electrode.
16. manufacture method as claimed in claim 15 is characterized in that, this first electrode is a metal electrode, and this second electrode is a transparency electrode.
17. manufacture method as claimed in claim 15 is characterized in that, the diameter of this silicon nanocrystal grain of this sensitization silicic dielectric layer is between 0.5 to 200 nanometer.
18. manufacture method as claimed in claim 15 is characterized in that, this signal read element comprises a thin-film transistor signal read element.
19. manufacture method as claimed in claim 15 is characterized in that, this optical pickocff comprises an ambient light sensor, is arranged in the non-display area of a display unit.
20. manufacture method as claimed in claim 15 is characterized in that, this sensitization silicic dielectric layer is a silicon-rich silicon nitride layer, and the molecular formula of this silicon-rich silicon nitride layer is SiNy, and y is greater than 0.75 and less than 1.33.
21. manufacture method as claimed in claim 20 is characterized in that, the method that forms this sensitization silicon-rich silicon nitride layer comprises:
Carry out an electricity slurry and increase chemical vapor deposition method, this silicon-rich silicon nitride layer of deposition on this substrate.
22. manufacture method as claimed in claim 21, it is characterized in that, it is to utilize silicomethane that this electricity slurry increases chemical vapor deposition method, and nitrogen source gas reaction forms this silicon-rich silicon nitride layer, and silicomethane and this nitrogen are originated the ratio of gas between 15 to 1.
23. manufacture method as claimed in claim 22 is characterized in that, this nitrogen source gas comprises that ammonia and nitrogen are wherein one of at least.
24. manufacture method as claimed in claim 21 is characterized in that, this electricity slurry increases the reaction temperature of chemical vapour deposition (CVD) between 250 to 400 ℃.
25. manufacture method as claimed in claim 15 is characterized in that, this sensitization silicic dielectric layer is a Silicon-rich silicon oxynitride layer, and the molecular formula of this Silicon-rich silicon oxynitride layer is SiOxNy, and x is between 0.1 to 2, and y is between 0.1 to 1.33.
26. manufacture method as claimed in claim 25 is characterized in that, the method that forms this Silicon-rich silicon oxynitride layer comprises:
Carry out an electricity slurry and increase chemical vapor deposition method, this Silicon-rich silicon oxynitride layer of deposition on this substrate.
27. manufacture method as claimed in claim 26, it is characterized in that, it is to utilize silicomethane that this electricity slurry increases chemical vapor deposition method, and nitrogen oxygen source gas reaction forms this this Silicon-rich silicon oxynitride layer, and silicomethane and this nitrogen oxygen are originated the ratio of gas between 5 to 0.3.
28. manufacture method as claimed in claim 27 is characterized in that, this nitrogen oxygen source gas comprises nitrous oxide.
29. manufacture method as claimed in claim 28 is characterized in that, this nitrogen oxygen source gas comprises that ammonia, nitrogen and oxygen are wherein one of at least.
30. manufacture method as claimed in claim 27 is characterized in that, this nitrogen oxygen source gas comprises ammonia and nitrogen wherein one of at least, and oxygen.
31. manufacture method as claimed in claim 26 is characterized in that, this electricity slurry increases the reaction temperature of chemical vapour deposition (CVD) between 250 to 400 ℃.
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| CN101521243B (en) * | 2009-04-02 | 2014-10-15 | 友达光电股份有限公司 | Optical sensor and manufacture method thereof and display panel with same |
| TWI394071B (en) | 2009-08-14 | 2013-04-21 | Au Optronics Corp | Oled touch panel and method of forming the same |
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