CN100552879C - Stage drive method and stage apparatus, exposure apparatus, and device producing method - Google Patents

Stage drive method and stage apparatus, exposure apparatus, and device producing method Download PDF

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CN100552879C
CN100552879C CN 200580002269 CN200580002269A CN100552879C CN 100552879 C CN100552879 C CN 100552879C CN 200580002269 CN200580002269 CN 200580002269 CN 200580002269 A CN200580002269 A CN 200580002269A CN 100552879 C CN100552879 C CN 100552879C
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stage
state
region
liquid
exposure apparatus
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CN1918695A (en
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柴崎祐一
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尼康股份有限公司
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Abstract

当从一载台(WST1(或WST2))位于有液体Lq供应的投影光学系统PL正下方的第一区域的第一状态,迁移至另一载台(WST2(或WST1))位于第一区域的第二状态时,使两载台维持于X轴方向呈近接状态朝X轴方向同时驱动。 When the first state of the first zone from a stage (WSTl (or and WST2)) located in the liquid Lq supplied directly below the projection optical system PL, migration to another stage (and WST2 (or WSTl)) located in the first region when the second state, the two stage was maintained in the X-axis direction near contact state while driving the X-axis direction. 因此,能在投影光学系统与位于其正下方的特定载台之间供应液体的状态下,从第一状态迁移至第二状态。 Thus, the liquid can be supplied in a state between the projection optical system and located directly below a particular stage thereof, migration from a first state to a second state. 藉此,能使从一载台侧的曝光动作结束至另一载台侧的曝光动作开始为止的时间缩短,使能进行高产能的处理。 Accordingly, the exposure operation can stage a time until the start end side to the other side of the stage to shorten the exposure operation, so that the high productivity can be processed. 又,因在投影光学系统的像面侧能使液体持续存在,故能防止在投影光学系统的像面侧的光学构件产生水痕。 Further, because the image plane side of the projection optical system that the liquid is persistent, it can prevent water marks on the optical member side of the image plane of the projection optical system.

Description

载台驱动方法及载台装置、曝光装置、及元件制造方法 Stage drive method and the stage apparatus, exposure apparatus, and device manufacturing method

技术领域 FIELD

本发明是关于载台驱动方法及载台装置、曝光装置、及元件制造方法, 更详细的说,是关于将能在包含有液体局部供应的二维面内的第一区域的区域移动的两个载台驱动的载台驱动方法及适于实施该载台驱动方法的载台装置,在投影光学系统与J^反之间供应液体且通过投影光学系统与该液体使基板曝光的曝光装置,以及使用该曝光装置的元件制造方法。 The present invention relates to stage drive methods and stage apparatus, exposure apparatus and device manufacturing method in more detail, it relates to a liquid containing partially able to supply a first region of the moving area in the two-dimensional plane a stage driving stage drive method and apparatus suitable for implementing the stage drive method of the stage, the projection optical system and J ^ supplying liquid reaction between the liquid and the exposure apparatus exposing the substrate through the projection optical system, and the method of manufacturing a device using the exposure apparatus.

背景技术 Background technique

已知,在供制造半导体元件(集成电路等)、液晶显示元件等电子元件 It is known, for manufacturing the semiconductor device (integrated circuits), liquid crystal display element or the like electronic components

的光刻步骤,主务使用步进重复(step and repeat)方式的缩小投影曝光装置(所谓步进^U),或步进扫描(step and scan)方式的投影曝光装置(所谓扫描步进机(也称为扫描机)),将掩膜或标线片(以下,统称为"标线片") 的图案像通过投影光学系统,转印于涂布有光刻胶(感光剂)的晶片或玻璃板等的感旋光性14l(以下,称为"基板"或"晶片,,)上的多个各照射区域。 Projection exposure apparatus of photolithography step, the main service using a step and repeat reduction projection exposure apparatus (step and repeat) mode (called steppers ^ U), or step and scan (step and scan) mode (so-called scanning stepper pattern (also called a scanner)), the mask or reticle (hereinafter referred to as "reticle") through a projection optical system, the image, transferred onto a wafer coated with a photoresist (photosensitive agent) or a photosensitive glass plate 14L (hereinafter referred to as "substrate" or "wafer ,,) a plurality of shot areas on each.

投影曝光装置所具备的投影光学系统的分辨率R,能以下式(1)的瑞利(Rayleigh)式表示: A projection optical system provided in the projection exposure apparatus of the resolution R, Rayleigh (of Rayleigh) the following formula can be the formula (1) represents:

RK!x入/NA (1) RK! X into / NA (1)

在此,入是曝光波长,NA是投影光学系统的数值孔径,IQ是处理系数。 Here, into the exposure wavelength, NA is the numerical aperture of the projection optical system, the IQ is the processing coefficients. 由于式(1)所使用的曝光波长(曝光用光的波长)越短,且投影光学系统的数值孔径(NA)越大,分辨率R则越高。 Since the formula (1) used in the exposure wavelength (the wavelength of exposure light) is shorter, and the numerical aperture of projection optical system (NA) of the larger, the higher the resolution R. 因此,随着集成电路的微细化, 使用于投影曝光装置的曝光波长则年年越短波长化,目前以比KrF准分子激光(波长248nm)短波长的ArF准分子激光(波长193nm)为光源的曝光装置也实用化。 Thus, with the miniaturization of integrated circuits, the exposure wavelength used in the projection exposure apparatus is more mid shorter wavelength, than the current KrF excimer laser (wavelength of 248 nm) shorter wavelength ArF excimer laser (193 nm wavelength) as the light source the exposure apparatus is also practical. 又,投影光学系统的数值孔径也逐渐增大。 Further, the numerical aperture of the projection optical system also increases.

13进行曝光时,与分辨率同样,焦点深度(DOF)也很重要。 13 is exposed, with the same resolution, depth of focus (DOF) is also important. 焦点深度5 能以下式(2)表示:<formula>formula see original document page 14</formula>) 5 represents the depth of focus can be the following formula (2): <formula> formula see original document page 14 </ formula>)

在此,K2是处理系数。 Here, K2 is a process factor. 依据式(1)、式(2),为了要提高分辨率R, 若使曝光波长缩短,使数值孔径NA变大(大NA化),则得知焦点深度5 会变小。 According to formula (1), the formula (2), in order to improve the resolution R, the wavelength shortening When the exposure and the numerical aperture NA becomes larger (larger NA), that the depth of focus becomes smaller 5. 在投影曝光装置,是将晶片的表面配合投影光学系统的像面来进行曝光,因此,较佳者为焦点深度5应具某程度大。 In the projection exposure apparatus, it is the mating surface of the wafer image plane of the projection optical system for exposure, therefore, preferred are the 5 should be a large depth of focus to some extent.

然而,通过上述曝光用光的短波长化及投影光学系统的大NA化,焦点深度5是越来越变小。 However, by the exposure light of shorter wavelength and the projection optical system is larger NA, the focal depth 5 is getting smaller. 又,曝光波长将来会变成更短波长化已确定,假如保持此趋势,焦点深度5则会变过小,而产生曝光动作时的焦点裕度不足之虞。 Further, the exposure wavelength will become the focus margin is insufficient during the risk of a shorter wavelength has been determined that, if this tendency remains, the focal depth 5 becomes too small, the exposure operation is generated in the future.

因此,当作实质上能使曝光波长缩短,且比空气中使焦点深度变大(宽广)的方法,最近利用液浸法的曝光装置则引起注目。 Thus, as can substantially shorten the exposure wavelength, and to air for the depth of focus becomes larger (wider) than the method using the exposure apparatus nearest the liquid immersion method is attracted attentions. 利用该液浸法的曝光装置,已知悉:在投影光学系统的下面与晶片表面之间,以局部填满水或有机溶剂等的液体的状态,进行曝光的(例如,参照下述专利文献l)。 The liquid immersion method using an exposure apparatus, have noted: between the lower surface of the projection optical system and the wafer to locally fill a liquid state water or an organic solvent, etc., for exposure (e.g., see Patent Document l ). 此专利文献1所记载的曝光装置,是利用在液体中的曝光用光的波长,会成为空气中的1/n倍(n是液体的折射率,通常1.2~1.6程度),来提高分辨率,并且比起不使用液浸法能获得与该分辨率相同分辨率的投影光学系统(假设此种投影光学系统的制造是可能的),能使焦点深度扩大为n倍,即比空气中能使焦点深度实质上扩大n倍。 This exposure apparatus described in Patent Document 1, in a liquid using a wavelength of exposure light, becomes 1 / n times the air (n is the refractive index of the liquid is generally 1.2 to 1.6 degrees), to improve the resolution and the liquid immersion method is not used than can be obtained with the same resolution as the resolution of the projection optical system (projection optical system is assumed such a manufacturing is possible), depth of focus is enlarged n times than in the air that is able to depth of focus is substantially enlarged n times.

然而,专利文献1所记载的曝光装置,在晶片交换时,在晶片载台从投影光学系统正下方离开前的阶段,需要将液体暂时回收,使投影光学系统的下面与晶片表面之间,从湿状态变成干状态。 However, the exposure apparatus described in Patent Document 1, at the time of wafer exchange, in the stage before the wafer stage directly below the projection optical system is separated from the need to recover the liquid temporarily, so that between the lower surface of the wafer and the projection optical system, from wet state to a dry state. 但是,如此,若每于晶片交换时,需要进行液体的回收与供应,可确定液体的回收与供应所需的时间会变成曝光装置的产能降低的主要原因。 However, so, if each of the wafer exchange, the need for recovery and supply of liquid can be determined and the time required to recover the supply of the liquid becomes the main reason for the reduced capacity of the exposure apparatus.

又,如上述,将投影光学系统的像面侧的光路空间从湿状态变成干状态时,若持续干状态,则在构成投影光学系统最下端的光学构件(所谓前球,透镜或玻璃板等;以下,称为"前端透镜")的表面,会有产生水紋(水痕) 之虞。 In addition, when as described above, the optical path space of the image plane side of the projection optical system becomes a wet state from the dry state, if continued dry state, the projection optical system constituting the lowest end optical member (a so-called before the ball, or a glass lens and the like; hereinafter referred to as surface "tip lens"), and will produce water stains (water marks) in danger. 又,在该前端透镜附近若配置自动对焦机构的构成构件的光学构件(例如棱镜)的情形,在该自动对焦机构的构成构件的光学构件表面,会有产生水紋(水痕)之虞。 Further, in the vicinity of the front end of the case when the optical members constituting the lens configuration of the autofocus mechanism member (e.g. a prism), the surface of the optical member constituting the member of the autofocus mechanism, will produce water stains (water marks) in danger. 此水紋的产生,则会成为投影光学系统的透过率降低或闪光(flare)的要因,进而或会成为使投影光学系统的其它结像性能恶化的要因。 Watermark produce this, the transmittance of the projection optical system will be reduced or flash (FLARE) due to, in turn, or to become the projection optical system due to other imaging performance degradation. 又,若在上述棱镜等产生水痕的情形,以自动对焦方式使晶片表面与投影光学系统的像面对准时的面对准精度则有降低之虞。 Further, in the case when the prism produces water marks and the like, to the surface of the wafer auto-focus manner and the image plane of the projection optical system of the aligner time to decrease the accuracy of the danger. 又,水痕的产生若严重时,需要前端透镜或光学构件的更换,但其更换所需的时间会成为使曝光装置的运转率降低的要因。 Further, if the generation of water marks serious need to replace the tip lens or the optical member, but the time will be required to replace the exposure apparatus due to reduction of the operation rate.

又,在本说明书,使用水以外的液体时,将形成于前端透镜等的花紋也称为水紋(水痕)。 Pattern and, in this specification, where a liquid other than water, is formed on the tip lens or the like is also referred to as water stains (water marks).

前述专利文献1为国际公开第99/49504号小册子。 Patent Document 1 is the International Publication No. 99/49504 pamphlet.

发明内容 SUMMARY

本发明,有鉴于上述情况,依第一观点,提出一种载台驱动方法,是在包含有液体局部供应的二维面内的第一区域、与位于该第一区域的第一轴方向一侧的第二区域的既定范围区域内,独立驱动笫一载台与笫二载台,其中: The present invention, in view of the above, according to the first aspect, to provide a stage driving method, comprising in a first area within the two-dimensional plane of the liquid supplied locally, with the first axis direction is a region located at the first within a predetermined range of the second region side, a separate drive stage and Zi Zi two stage, wherein:

当/人该第一、第二载台中的一载台位于该第一区域的第一状态,迁移至另一载台位于该第一区域的第二状态时,4吏该第一载台与第二载台,维持于与该第一轴方向交叉的第二轴方向上呈近4妄状态及接触状态的任一状态,并将该第一、第二载台朝该第二轴方向同时驱动。 When / the first person, a second stage carrier stations in the first state of the first area, the migration to the second state of the other stage is positioned at the first area, the first stage 4 with the official a second stage, maintained at a second axis intersecting the first axis direction was nearly any jump 4 state and a state of contact, and the first, while the second stage toward the second axis drive.

在此,所谓"第一载台与第二载台呈近接状态,,,是指以从第一载台与第二载台之间不泄漏液体,或液体的泄漏少的程度,使第一载台与第二载台呈近接状态而言。但是,第一载台与第二载台的间隔的容许值,是因该两载台的材质或液体的种类等而不同。本说明书,是站在这种观点使用"第一载台与第二载台呈近接状态"的表现。 Here, the "first stage and the second stage are close together ,,, it refers to a state from between the first stage and the second stage does not leak liquid, or liquid leakage less extent, the first and the second stage are close together state of the stage concerned. However, the first carrier interval allowable value of the second stage of the station, is depending on the type of the liquid material or the like two stage different from the present specification, is this view stand using a "first stage and the second stage are close together state" performance.

依此,在包含将液体局部供应的二维面内的第一区域、与位于该第一区域的第一轴方向一侧的第二区域的既定范围区域内,使第一载台与第二载台独立驱动时,在从一载台位于该第一区域的第一状态迁移至另一载台位于该第一区域的第二状态的情形,第一、第二载台,维持与第一轴方向交叉的第二轴方向彼此呈近接状态或接触状态,而朝第二轴方向同时驱动。 So, within a predetermined range comprises a first area region in the two-dimensional plane of the liquid is locally supplied, and a second region side of the first axis direction is located in the first region, the first and the second stage when independently driving the stage, a migration from a first state at the first stage region to another case where the stage is in the second state the first region, a first, a second stage, maintaining the first a second axis direction intersecting the axial direction close to each other as a contact state or contact state toward the second axis simultaneously driven. 藉此,以在第一、第二载台中的至少一载台上形成液浸区域的状态,边防止或抑制从第一、笫二载台(两载台)的间隙泄漏液体,边能>^人第一状态迁移至第二状态。 Thereby, a state of the liquid immersion area is formed in the first and second carrier at least one station on a stage, while preventing or suppressing a gap from the first, Zi two stage (two stage) liquid leakage, while able> ^ state who first migrated to the second state. 即,从一载台上保持液体的状态,经过在双方的载台上保持液体的状态, 至另一载台上保持液体的状态,不必经过液体的全回收、再度供应的步骤, 能使其迁移。 That is, the step of maintaining the liquid state from a carrier stage, after the state of the liquid held in both the carrier stage, to other stage to maintain a liquid state, without going through the process of fully recovering the liquid, again supplied, it can migrate. 因此,将从第一状态至第二状态的迁移能以短时间进行。 Thus, the migration from the first state to the second state can be performed in a short time.

本发明,依第二观点,提出一种载台驱动方法,是在包含有液体局部供应的二维面内的第一区域、与位于该第一区域的笫一轴方向一侧的笫二区域 The present invention, according to a second aspect, provides a method for driving the carrier station, comprising in a first area within the two-dimensional plane of the liquid supplied locally, Zi Zi second region located to the side of a first region of the axial direction

的既定范围的区域内,驱动第一载台;在包含该第一区域、与位于该第一区域的该第一轴方向的另一侧的第三区域的既定范围的区域内,驱动第二载台,其中: The region of the predetermined range, a first drive stage; including the first region, the area of ​​a predetermined range of the third region of the other side of the first axis of the first region, a second drive stage, in which:

当从该第一、第二载台中的一载台位于该第一区域的第一状态,迁移至另一载台位于该第一区域的第二状态时,^使该第一载台与第二载台,维持与该第一轴方向呈近接状态及接触状态的任一状态,并将该第一、第二载台朝该第一轴方向同时驱动。 When in the first state of the first region from the first, a second stage carrier stations, moved to another stage in the second state of the first region, ^ so that the first and the second stage stage two, a state was maintained near contact state and any contact with the first axis, and the first and second stage axial direction toward the first driven simultaneously.

依此,在包含将液体局部供应的二维面内的第一区域、与位于该第一区域的第一轴方向一侧的第二区域的既定范围区域内,驱动第一载台,在包含该第一区域、与位于该第一区域的该第一轴方向的另一侧的第三区域的既定范围区域内,驱动第二载台时,从一载台位于第一区域的第一状态迁移至另一载台位于第一区域的第二状态时,第一载台与第二载台,维持与第一轴方向呈近接状态或接触状态的任一状态,而朝第一轴方向同时驱动。 So, within a predetermined range comprises a first area region in the two-dimensional plane of the liquid is locally supplied, and a second side of the first region is located in the axial direction of the first region, a first driving stage, comprising a first region within a predetermined range of the region, the first axis at the first region a third region of the other side, when driving the second stage, a stage from the first region in the first state when migrating to the second stage is in the first state of the other region, a first stage and a second stage, the first axis direction is maintained as a state of any of a proximity state or contact state, while the direction toward the first shaft drive. 藉此,以在第一、第二载台中的至少一载台上形成液浸区域的状态,边防止或抑制从第一、第二载台的间隙泄漏液体,边能从第一状态迁移至第二状态。 Thereby, a state of the liquid immersion area is formed in a first, a second carrier at least on a stage station, while preventing or suppressing leakage of the liquid from the gap between the first and second stage of migration from a first state to a side The second state. 即,从一载台上保持液体的状态,经过在双方的载台上保持液体的状态, 至另一载台上保持液体的状态,不必经过液体的全回收、再度供应的步骤, 能使其迁移。 That is, the step of maintaining the liquid state from a carrier stage, after the state of the liquid held in both the carrier stage, to other stage to maintain a liquid state, without going through the process of fully recovering the liquid, again supplied, it can migrate. 因此,将从第一状态至第二状态的迁移能以短时间进行。 Thus, the migration from the first state to the second state can be performed in a short time.

本发明,依第三观点,提供第一载台装置,具备: The present invention, according to a third aspect, there is provided a first stage device, comprising:

第一、第二载台,能在包含有液体局部供应的二维面内的第一区域、 与位于该第一区域的第一轴方向一侧的第二区域的既定范围区域内独立驱动;及 A first, a second stage, can comprise a first region within the two-dimensional plane of the liquid supplied locally, independently driven within a predetermined range of the region of the second side of the first region is located in the axial direction of the first region; and

控制装置,当/人该第一、第二载台中的一载台位于该第一区域的第一状态,迁移至另一载台位于该第一区域的第二状态时,该第一栽台与该第二载台,维持与该第一轴方向交叉的第二轴方向呈近接状态及接触状态的任一状态,以使该第一、第二载台朝该第二轴方向同时移动的方式,来控制该第一、笫二载台。 Control means, when / the first person, a second stage carrier stations in the first state of the first area, the migration to the second state of the other stage is positioned at the first area, the first stage planted the second stage, to maintain the second axis intersecting the first axis direction was nearly contact state and a contact state to any state, so that the first, the second stage while moving toward the second axial direction mode, controlling the first, two stage Zi.

依此,从第一、.第二载台中的一载台位于有液体局部供应的二维面内的第一区域的第一状态,迁移至另一载台位于该第一区域的第二状态时,通过控制装置,控制第一、第二载台,使第一、第二载台维持与第一轴方向交叉的第二轴方向彼此呈近接状态或接触状态,而朝第二轴方向同时移动。 So, from the first, second stage carrier stations located in a first state of the first area in the two-dimensional plane of the liquid supplied locally, migration to a second state of the other stage at the first region when, by the control device controls the first, the second stage, the first, second maintaining stage second axis intersecting the first axis direction as a near contact state or contact state with each other, while the direction toward the second axis mobile. 藉此,以在第一、第二载台中的至少一载台上形成液浸区域的状态,边防止或抑制从第一、第二载台(两载台)的间隙泄漏液体,边能从第一状态迁移至第二状态。 Thereby, a state of the liquid immersion area is formed in a first, a second carrier at least on a stage station, while preventing or suppressing leakage of the liquid from the gap between the first and second stage (two stage), the side from a first state to a second state transition. 即,从一载台上保持液体的状态,经过在双方的载台上保持液体的状态,至另一载台上保持液体的状态,不必经过液体的全回收、再度供应的步骤,能使其迁移。 That is, the step of maintaining the liquid state from a carrier stage, after the state of the liquid held in both the carrier stage, to other stage to maintain a liquid state, without going through the process of fully recovering the liquid, again supplied, it can migrate. 因此,将从第一状态至第二状态的迁移能以短时 Therefore, the migration from a first state to a second state capable of short-term

间进行o Inter were o

本发明,依第四观点,提供第二载台装置,具备: 第一载台,能在包含有液体局部供应的二维面内的第一区域、与位于该第一区域的第一轴方向一侧的第二区域的既定范围的区域内移动; The present invention, according to a fourth aspect, there is provided a second stage device, comprising: a first stage, comprising a first region capable of two-dimensional plane within the local liquid supply, at the first region with a first axial direction moves within a predetermined range of the area of ​​the side of the second region;

第二载台,能在包含该第一区域、与位于该第一区域的该第一轴方向 The second stage, including the first region can, the first axis at the first region

17的另一侧的第三区域的既定范围区域内移动;及 The range of movement within a predetermined area of ​​the third region 17 of the other side; and

控制装置,使从该第一、第二载台中的一载台位于该第一区域的第一状态,迁移至另一载台位于该第一区域的第二状态时,将该第一、第二载台控制成,维持与该第一轴方向呈近接状态及接触状态的任一状态,以使该第一、第二载台朝该笫一轴方向同时移动。 Control means, so that from the first time, a second stage carrier stations in the first state of the first area, the migration to the second state of the other stage at the first region, the first, second two stage controlled to maintain the form of a proximity state and the state of any contact with the first axial direction, so that the first, second stage toward the Zi axis direction while moving.

依此,从第一、笫二载台中的一载台位于有液体局部供应的二维面内的第一区域的第一状态,迁移至另一载台位于该第一区域的第二状态时,通过控制装置,控制第一载台与第二载台,使笫一、第二载台维持与第一轴方向呈近接状态及接触状态的任一状态,而朝第一轴方向同时移动。 So, in a first state of the first region from the first, Zi II contains a station located in the liquid stage of the two-dimensional plane supplied locally, another stage in the second state when the first region to migrate , the control means controls the first stage and the second stage, so that Zi, as a second stage to maintain a near-contact state and the state of any contact with the first axis direction, while moving towards the first axis. 藉此, 以在第一、第二载台中的至少一载台上形成液浸区域的状态,边防止或抑制从第一、第二载台的间隙泄漏液体,边能从第一状态迁移至第二状态。 Thereby, a state of the liquid immersion area is formed in a first, a second carrier at least on a stage station, while preventing or suppressing leakage of the liquid from the gap between the first and second stage of migration from a first state to a side The second state. 即, 从一载台上保持液体的状态,经过在双方的载台上保持液体的状态,至另一载台上保持液体的状态,不必经过液体的全回收、再度供应的步骤,能使其迁移。 That is, the step of maintaining the liquid state from a carrier stage, after the state of the liquid held in both the carrier stage, to other stage to maintain a liquid state, without going through the process of fully recovering the liquid, again supplied, it can migrate. 因此,将从第一状态至第二状态的迁移能以短时间进行。 Thus, the migration from the first state to the second state can be performed in a short time.

本发明,依第五观点,提供第一曝光装置,是在投影光学系统与基板之间供应液体,通过该投影光学系统与该液体,通过能量光束使该基板曝光, 具备: The present invention, according to a fifth aspect, there is provided a first exposure apparatus that supplies a liquid between the projection optical system and the substrate through the projection optical system and the liquid, so that the energy of the beam through the exposed substrate, comprising:

第一载台,能在包含待供应该液体的该投影光学系统正下方的第一区域、与位于该投影光学系统的第一轴方向一侧的第二区域的既定范围区域内移动; A first stage, comprising a first region of the can in the projection optical system of the liquid to be supplied directly below, the range of movement within a predetermined area of ​​the second region of the first axial direction side of the projection optical system is located;

第二载台,能在包舍该第一区域、与位于该投影光学系统的第一轴方向的另一侧的笫三区域的区域内移动; A second stage that can move within the area of ​​the three-zone Zi and the other side of the first axis direction of the projection optical system is positioned in the first region of the rounded pack;

载台驱动系统,使该第一、第二载台驱动,并且使从一载台位于该第一区域的第一状态迁移至另一载台位于该第一区域的第二状态时,使该第一载台与第二载台,维持与该第一轴方向呈近接状态及接触状态的任一状态,并将该第一、第二载台朝该第一轴方向同时驱动;第一标记检测系统,配置于该第二区域上方,供检测存在于该第一载 When the stage drive system that drives the first, second driver stage, and the first state from a stage located in the first region to migrate to the second state where the other stage is located in the first region, so that the first stage and the second stage, a state is maintained as a proximity state and any contact with the first axis, and the first, second stage toward the first axis direction are simultaneously driven; first marker detection system disposed above the second region, for detecting the presence of the first carrier

台上的标记;及 Marking stage; and

第二标记;f&测系统,配置于该第三区域上方,供检测存在于该第二载台 A second marker; f & measuring system disposed above the third region, for detecting the presence in the second stage

上的才示"^己。 It was shown on the "^ hexyl.

依此,使从一载台位于待供应液体的投影光学系统正下方的第一区域的第一状态迁移至另一载台位于第一区域的第二状态时,通过载台驱动系统, 维持第一、第二载台与第一轴方向呈近接状态及接触状态,使该第一、第二载台朝笫一轴方向同时驱动。 So, in the first region of the first stage from a projection optical system located directly below the liquid to be supplied to the second state is migrated to another region at a first stage, the stage through the drive system, which section a second stage to the first axis direction was nearly contact state and a contact state, so that the first and second stage axial direction toward Zi simultaneously driven. 因此,以在投影光学系统与其正下方的至少一载台上保持着液体的状态,边防止或抑制从第一、第二载台的间隙泄漏液体,边能从第一状态迁移至第二状态。 Thus, in order to maintain the liquid state in at least one of the projection optical system and its stage of an immediately below, while preventing or suppressing the leakage of the liquid from the gap between the first and second stage of migration from the edge of the first state to the second state . 即,从使用一载台进行通过投影光学系统与液体的基板的曝光动作后,至使用另一载台开始通过投影光学系统与液体的基歐的曝光动作为止期间,从一载台与投影光学系统之间保持液体的 I.e., from the use of a stage after the exposure operation of the substrate by the projection optical system and the liquid begins to use another stage during Kehoe through the projection optical system and the liquid until the exposure operation, a stage from the projection optical holding the liquid between the system

状态,经ii^双方的载台与投影光学系统之间保持液体的状态,至另一载台与投影光学系统之间保持液体的状态,不必经过液体的全回收、再度供应的步骤,能使其迁移。 State, the two sides between ii ^ stage and the projection optical system to maintain a liquid state, to the other carrier holding a liquid between the projection optical system and the stage state, without going through the process of fully recovering the liquid step, the re-supply can their migration. 因此,将使用一载台的曝光动作结束后的使用另一载台的曝光动作,能以短时间开始。 Thus, using the exposure operation after completion of the exposure operation using a stage to another stage, and can be started in a short time. 又,在投影光学系统的像面侧,因持续存在液体,故能有效地防止在投影光学系统的像面侧的光学构件产生前述的水紋(水痕)。 Further, in the image plane side of the projection optical system, due to the continued presence of the liquid, it can effectively prevent water stains (water marks) generated in the image plane side of the optical member of the projection optical system. 又,因能分别一起进行对第一载台上的a的曝光动作与以第二的标记检测系统的第二载台上的基板的标记检测动作(对准动作),及对第二载台上的基板的曝光动作与以第一的标记检测系统的第一载台上的基板的标记检测动作(对准动作),故相较于使用一个载台将J4l交换、标记检测(对准)及曝光动作逐次进行的情形,能期待产能的提高。 Further, because it can be a separately for the first stage of an exposure operation with the mark detection operation (alignment operation) of the second substrate on a stage of a second mark detection system, and the second stage exposure operation on the substrate with the mark detection operation (alignment operation) of the substrate carrier of the first stage of the first mark detecting system, it is compared to the use of a stage J4l exchange, mark detection (aligned) situation and the exposure operation are performed sequentially, and can be expected to improve production capacity.

本发明,依第六观点,提供第二曝光装置,是在投影光学系统与«1之间供应液体,通过该投影光学系统与液体,通过能量光束使该基板曝光,具备: The present invention, according to a sixth aspect, there is provided a second exposure apparatus that supplies a liquid between the projection optical system and the «1, through the projection optical system and the liquid, so that the energy of the beam through the exposed substrate, comprising:

第一载台,能在包含供应该液体的该投影光学系统正下方的第一区域、 A first stage, comprising a first region of the can in the projection optical system where the liquid is supplied below,

19与位于该第一区域的第一轴方向一侧的第二区域的既定范围区域内移动, 19 is moved within a predetermined range of the second area located on one side of a first axis direction of the first region,

且能载置该基板; Capable of mounting the substrate;

第二载台,能在包舍该第一区域、与位于该第一区域的第一轴方向的另一侧的第三区域的区域内移动,且用于既定的测量;及 A second stage that can move within a first region of the axial direction of the first region a third region of the other side in the region of the first packet homes, and for a predetermined measurement; and

载台驱动系统,使该第一、第二载台驱动,并且使从一载台位于该第一区域的第一状态迁移至另一载台位于该第一区域的第二状态时,使该第 When the stage drive system that drives the first, second driver stage, and the first state from a stage located in the first region to migrate to the second state where the other stage is located in the first region, so that The first

一载台与该第二载台,维持与该第一轴方向呈近接状态;^接触状态的任一状态,并将该第一栽台与第二载台朝该第一轴方向同时驱动。 A stage the second stage, was to maintain the state of proximity to the first axial direction; ^ contact state according to any one state, and the first stage and the second stage plant toward the first axis direction are simultaneously driven.

依此,从一载台位于待供应液体的投影光学系统正下方的第一区域的第一状态迁移至另一载台位于第一区域的第二状态时,通过载台驱动系统, 第一、第二载台,维持与第一轴方向呈近接状态及接触状态的任一状态,使第一、第二载台向第一轴方向同时驱动。 When so, the projection optical system of the liquid to be supplied from a stage located immediately below the first state of the first area migrates to a second state where the other stage is located in the first area, the stage drive system by, first, a second stage, the first axis direction is maintained as a state of any of a proximity state and a contact state, the first and second stage are simultaneously driven to the first axis. 因此,以在投影光学系统与位于其正下方的至少一载台之间保持着液体的状态,边防止或抑制从第一载台与第二载台的间隙泄漏液体,边能从第一状态迁移至笫二状态。 Accordingly, at least between a stage located directly below projection optical system is maintained in a liquid state, while preventing or suppressing leakage of the liquid from the gap between the first stage and the second stage, the first state from the side migrate to the undertaking of two states. 即,对第一载台上的»通过投影光学系统与液体进行^的曝光动作后,至使用第二载台在才更影光学系统正下方开始测量为止期间,从第一载台与投影光学系统之间保持液体的状态,经过在双方的载台与投影光学系统之间保持液体的状态,至第二载台与投影光学系统之间保持液体的状态,不必经过液体的全回收、再度供应的步骤,能使其迁移。 That is, after »the first stage of an exposure operation performed by ^ the projection optical system and liquid to use during the second stage is more directly below the optical system until start of measurement, from the first stage and the projection optical holding state of the liquid between the system, while maintaining the liquid through both the stage between the projection optical system, between the second stage to the projection optical system to maintain a liquid state, without going through the process of fully recovering the liquid, again the supply steps to enable it to migrate. 又,对第二载台结束测量后,至对第一载台开始曝光为止,也同样。 Further, the second end of the measurement stage to the first stage until the exposure begins, too. 因此,将使用第一载台的曝光动作结束后的使用第二载台的测量动作,及使用第二载台的测量动作结束后的使用第一载台的曝光动作,能以短时间开始,能获得产能的提高。 Thus, using the first stage after the measurement operation using the second stage after the completion of the first stage using the exposure operation, and a second stage of the measurement operation of the exposure operation can be started in a short time, improve access to production capacity. 又,在投影光学系统的像面侧,因持续存在液体,故能有效地防止在投影光学系统的像面侧的光学构件产生前述的水紋(水痕)。 Further, in the image plane side of the projection optical system, due to the continued presence of the liquid, it can effectively prevent water stains (water marks) generated in the image plane side of the optical member of the projection optical system. 又,将^f吏用笫一载台的皿的曝光动作与使用第二载台的皿的检测动作,依测量动作能一起进行。 In addition, the detection operation by officials ^ f dish exposure operation using a dish Zi stage second stage, depending on the measurement operation can be performed together.

本发明,依第七观点,提供第三曝光装置,是在投影光学系统与M之间供应液体,通过该投影光学系统与液体,使该基板曝光,具备: The present invention, according to the seventh aspect, there is provided a third exposure apparatus that supplies a liquid between the projection optical system and M, via the projection optical system and the liquid, so that the exposed substrate, comprising:

第一载台,能在包含供应该液体的该投影光学系统正卞方的第一区域、 A first stage, comprising a first region of the can in the projection optical system is Bian side of the liquid supply,

与位于该第一区域的第一轴方向一侧的第二区域的既定范围区域内移动; 第二载台,能在包含该第一区域与该第二区域的区域内,与该笫一载 Moves within a predetermined range of the second area of ​​the first side of the first region is located in the axial direction; a second stage, can be in a first region including the inner region of the second region, the carrier Zi

台独立移动;及 Independent mobile station; and

载台驱动系统,使该第一、第二载台驱动,并且使从一载台位于该第一区域的第一状态迁移至另一载台位于该第一区域的第二状态时,使该第一载台与该第二载台,维持于与该第一轴方向交叉的第二轴方向上呈近接状态及接触状态的任一状态,并将该第一、第二载台朝该第二轴方向同时驱动。 When the stage drive system that drives the first, second driver stage, and the first state from a stage located in the first region to migrate to the second state where the other stage is located in the first region, so that the first stage and the second stage is maintained at a second axis intersecting the first axis direction was a proximity state to any state and a contact state, and the first, second stage toward the second two axial directions simultaneously driven.

依此,从一载台位于待供应液体的投影光学系统正下方的第一区域的第一状态迁移至另一载台位于第一区域的第二状态时,通过载台驱动系统, 第一、第二载台,维持与第二轴方向(与第一区域与第二区域所排列的第一方向的方向交叉)呈近接状态及接触状态的任一状态,使笫一、第二载台向第二轴方向同时驱动。 When so, the projection optical system of the liquid to be supplied from a stage located immediately below the first state of the first area migrates to a second state where the other stage is located in the first area, the stage drive system by, first, a second stage, maintaining a second axis direction (the first direction and the first and second regions are arrayed crossing) as a proximity state of any of a state and a contact state, so that Zi, the second stage second axis simultaneously driven. 因此,以在投影光学系统与位于其正下方的至少一载台之间保持着液体的状态,边防止或抑制从第一载台与第二载台的间隙泄漏液体,边能从第一状态迁移至第二状态。 Accordingly, at least between a stage located directly below projection optical system is maintained in a liquid state, while preventing or suppressing leakage of the liquid from the gap between the first stage and the second stage, the first state from the side migration to the second state. 即,在一载台侧通过投影光学系统与液体进行基板的曝光动作后,至在另一载台侧通过投影光学系统与液体开始M的曝光动作为止期间,从一载台与投影光学系统之间保持液体的状态,经过在双方的载台与投影光学系统之间保持液体的状态,至另一载台与投影光学系统之间保持液体的状态,不必经过液体的全回收、再度供应的步骤,能使其迁移。 That is, after the exposure operation of the substrate stage side through a projection optical system and liquid to the other side of the stage by the projection optical system during the exposure operation of the liquid until the M beginning from a stage and the projection optical system maintained between a liquid state, through the state holding the liquid between the two sides of the projection optical system and the stage, to the other carrier holding a liquid between the projection optical system and the stage state without going through the process of fully recovering the liquid, the step of re-supply can make migration. 因此,将使用一载台的曝光动作结束后的使用笫二载台的测量动作,及使用第二载台的测量动作结束后的使用另一载台的曝光动作, 能以短时间开始,能获得产能的提高。 Thus, using the measurement operation using the exposure operation after the end stage of a two stage Zi, the exposure operation and the use of another stage after completion of the second stage using the measurement operation can be started in a short time, can obtaining improve production capacity. 又,在投影光学系统的像面侧,因持续存在液体,故能有效地防止在投影光学系统的像面侧的光学构件产生前述的水紋(水痕)。 Further, in the image plane side of the projection optical system, due to the continued presence of the liquid, it can effectively prevent water stains (water marks) generated in the image plane side of the optical member of the projection optical system.

本发明,依第八观点,提供笫四曝光装置,是在投影光学系统与M之 The present invention, according to an eighth aspect, there is provided an exposure apparatus Zi four, M is a projection optical system of the

21间供应液体,通过该投影光学系统与该液体,使该基板曝光,具备: Supplying the liquid 21, through the projection optical system and the liquid, so that the exposed substrate, comprising:

第一载台,能在包含待供应该液体的该投影光学系统正下方的第一区域、及与该第一区域不同区域的区域内移动; A first stage, comprising a first region of the can in the projection optical system of the liquid to be supplied directly below, and the movement of the different regions within the region of the first region;

第二载台,能在包含该第一区域、及与该第二区域不同区域的区域内, 与该第一载台独立移动; The second stage, including the first region can, and moving the first stage and within the separate regions of different region of the second region;

载台驱动系统,使该第一、第二载台驱动,并且使/人一载台位于该第一区域的第一状态迁移至另一载台位于该第一区域的第二状态时,使该第一载台与该第二载台,维持与既定方向呈近接状态,并将该第一、第二载台朝该既定方向同时4区动;及 When the stage drive system that drives the first, second driver stage, and the / person, one stage of the first region in the first state is migrated to another stage in the second state of the first region, so that the first stage and the second stage, to maintain the predetermined direction are close together state, and the first stage toward the second predetermined direction while the movable region 4; and

抑制构件,设置于该第一载台及该笫二载台的至少一方,从该第一状态迁移至该第二状态时其位于该两载台的间隙,藉此来防止该液体从该间隙泄 Suppressing member, provided in the first carrier and at least one stage of the two stage Zi, which is located in the gap when the two stage transition from the first state to the second state, thereby preventing the liquid from the gap vent

漏o O leak

依此,从能在包含投影光学系统正下方的第一区域、及与该第一区域不同区域的区域内移动的第一、第二载台的一载台,位于第一区域的第一状态, 迁移至另一载台位于第一区域的第二状态时,通过4吏第一载台与第二载台与第一轴方向呈近接状态,并且使抑制构件(设置于第一、第二载台的至少一方,用以抑制液体的泄漏)以位于两载台的间隙的状态朝该既定方向同时驱动,从第一状态迁移至第二状态时,故能极力防止液体从两载台之间泄漏。 And so, from a first, a second stage of the movable stage in a first area directly below the projection optical system comprises, the different regions and the first region, the first region in the first state when moved to the second state to another stage in the first region by the first stage as a second stage and the first axis 4 proximity state officials, and the suppressing member (provided in the first, second when at least one of the stage, to suppress the leakage of the liquid) located in the gap to a state of both stages are simultaneously driven toward the predetermined direction, to migrate from a first state to a second state, it can be prevented as much of the liquid from the stage two Room leak.

又,在光刻步骤,使用本发明的各第一〜第四曝光装置,以该能量光束来^J^曝光,藉此,能将元件图案精度良好地转印在基板上,结果能提高高集成度的微元件的生产性。 Further, in the lithography step, using each of the first to fourth exposure apparatus of the present invention, the energy beam to be exposed ^ J ^, whereby the device pattern can be transferred with good accuracy on the substrate, the result can be improved high production of microelements degree of integration. 因此,本发明,进一步从另一观点来看,也可称元件制造方法,其包含使用本发明的第一〜第四曝光装置的任一种,以该能量光束使基&曝光的光刻步骤。 Accordingly, the present invention, further from another viewpoint, a method for producing said element also comprising any one of the first to fourth exposure apparatus of the present invention, the energy of the beam to the base & lithographic exposure step .

附图说明 BRIEF DESCRIPTION

图1是表示第一实施形态的曝光装置的概略图。 FIG 1 is a schematic view of an exposure apparatus of the first embodiment.

图2是表示第一实施形态的晶片载台装置的俯视图。 FIG 2 is a plan view of a first embodiment of a wafer stage apparatus. 图3是表示图2的晶片载台WST1的立体图。 FIG 3 is a perspective view of the wafer stage WST1 in FIG. 2 carrier. 图4是表示液体供排机构的概略俯视图。 FIG 4 is a schematic plan view of the liquid supply and discharge mechanism.

图5是表示第一实施形态的曝光装置的控制系统主要构成的方块图。 FIG 5 is a block diagram showing a control system of the first embodiment of the exposure apparatus main configuration. 图6是用以说明并行处理动作的两个晶片载台的驱动方法的图(其l)。 FIG 6 is a view (l) a driving method of two wafer for describing a parallel processing operation of the stage. 图7是用以说明并行处理动作的两个晶片载台的驱动方法的图(其2)。 FIG 7 is a view of a driving method for describing two wafer stage parallel processing operation (No. 2). 图8是用以说明并^f亍处理动作的两个晶片栽台的驱动方法的图(其3)。 FIG 8 is a right foot for explaining the processing of FIG. ^ F and the driving method of two wafer stage plant operation (part 3). 图9是用以说明并行处理动作的两个晶片载台的驱动方法的图(其4)。 FIG 9 is a diagram for explaining a driving method of the two parallel processing operation of wafer stage (which is 4). 图IO是表示弹性密封构件的图。 FIG IO is a view showing an elastic seal member.

图11是表示第二实施形态的曝光装置的控制系统主要构成的方块图。 FIG 11 is a block diagram showing a control system of a second embodiment of the exposure apparatus main configuration.

图12是表示第二实施形态的晶片载台装置的俯视图。 FIG 12 is a plan view of a second embodiment of a wafer stage apparatus.

图13A是用以说明第二实施形态的并行处理动作的两个晶片载台的驱动方法的图(其l)。 13A is a diagram for explaining a driving method of two wafer processing operation in parallel to the second embodiment of stage (which l).

图13B是用以说明第二实施形态的并行处理动作的两个晶片载台的驱动方法的图(其l)。 13B is a diagram for explaining a driving method of two wafer processing operation in parallel to the second embodiment of stage (which l).

图14A是用以说明第二实施形态的并行处理动作的两个晶片载台的驱动方法的图(其2)。 14A is a diagram for explaining a method of driving two parallel wafer processing operation stage of the second embodiment (No. 2).

图14B是用以说明第二实施形态的并行处理动作的两个晶片载台的驱动方法的图(其2)。 14B is a diagram for explaining a method of driving two parallel wafer processing operation stage of the second embodiment (No. 2).

图15A是用以说明笫二实施形态的并行处理动作的两个晶片载台的驱动方法的图(其3)。 15A is a diagram for explaining a driving method of the two parallel processing operation of wafer Zi two stage embodiment (No. 3).

图15B是用以说明第二实施形态的并行处理动作的两个晶片载台的驱动方法的图(其3)。 15B is a diagram for explaining a method of driving two parallel wafer processing operation stage of the second embodiment (No. 3).

图16是表示第三实施形态的晶片载台装置的俯视图。 FIG 16 is a plan view of a third embodiment of a wafer stage apparatus.

图17A是用以i兑明第三实施形态的并行处理动作的晶片载台与测量载台的驱动方法的图(其l)。 17A is parallel to i wafer processing operation against the third embodiment of FIG next stage and the stage drive method (which l) measurement.

图17B是用以说明第三实施形态的并^f亍处理动作的晶片载台与测量载 17B is a wafer for explaining a third embodiment ^ f the right foot and processing operation stage and a measurement stage

23台的驱动方法的图(其1)。 View (1) A method of driving stage 23.

图18A是用以说明第三实施形态的并行处理动作的晶片载台与测量载台的驱动方法的图(其2)。 FIG 18A is illustrative of a wafer processing operation in parallel to the third embodiment of FIG driving stage and the stage of the method (part 2) measurement.

图18B是用以说明第三实施形态的并行处理动作的晶片载台与测量载台的驱动方法的图(其2)。 18B is for describing a wafer processing operation in parallel to the third embodiment and FIG stage stage drive method (No. 2) measured.

图19A是用以说明抑制构件的变形例的图。 19A is for explaining a modified example of FIG suppressing member.

图19B是用以说明抑制构件的变形例的图。 19B is for describing a modification of the suppressing member FIG.

图19C是用以说明抑制构件的变形例的图。 19C is suppressed for explaining a modification of the member of FIG.

图20是表示第四实施形态的晶片载台装置的俯#见图。 FIG 20 is a plan # Figure wafer stage device of the fourth embodiment.

图21是表示晶片载台与测量载台近接状态的图。 21 is a wafer stage and the measurement stage proximity state of FIG.

图22A是用以说明第四实施形态的并行处理动作的晶片载台与测量载台的驱动方法的图(其1)。 22A is a wafer for describing a parallel processing operation of the fourth embodiment of FIG stage (1) of the stage drive method of measurement.

图22B是用以说明第四实施形态的并行处理动作的晶片载台与测量载台的驱动方法的图(其l)。 22B is for describing a parallel processing operation of the fourth embodiment of the wafer stage and the stage driving method (which l) measurement.

图23A是用以说明第四实施形态的并行处理动作的晶片载台与测量载台的驱动方法的图(其2)。 23A is a wafer for describing a parallel processing operation of the fourth embodiment of FIG stage and a stage drive method (No. 2) measured.

图23B是用以说明第四实施形态的并行处理动作的晶片载台与测量载台的驱动方法的图(其2)。 23B is for describing a parallel processing operation of the fourth embodiment of the wafer stage and the stage driving method (No. 2) measured.

图24是用以说明第四实施形态的变形例的图(其l)。 FIG 24 is a modification of the view (l) for explaining the fourth embodiment.

图25A是用以^t明第四实施形态的变形例的图(其2)。 25A is for showing a modification of the fourth embodiment ^ t out (part 2).

图25B是用以说明第四实施形态的变形例的图(其2)。 25B is a diagram for explaining modification of the fourth embodiment (part 2).

图26是用以说明本发明的元件制造方法的流程图。 FIG 26 is a flowchart of a method for manufacturing a device according to the present invention.

图27是表示图26的步骤204的具体例的流程图。 FIG 27 is a flowchart showing a specific example of step 204 of FIG. 26.

主要元件符号说明: Description of Symbols main components:

5:液体供应装置 5: the liquid supply means

6:液体回收装置10:照明系统 6: liquid recovery unit 10: an illumination system

11:标线片载台驱动部 11: a reticle stage drive section

12:基盘 12: base plate

15:移动镜 15: movable mirror

16、 18: X轴干涉计 16, 18: X-axis interferometer

17X、 117X: X移动镜 17X, 117X: X movable mirror

17Y、 117Y: Y移动镜 17Y, 117Y: Y movable mirror

20:主控制装置 20: main control means

21、 22、 27、 28:供应管 21, 22, 27, 28: supply tube

21a、 21b、 21c、 22a、 22b、 22c、 27a、 28a:供应嘴23、 24、 29、 30:回收管 21a, 21b, 21c, 22a, 22b, 22c, 27a, 28a: supply nozzles 23, 24, 29, 30: recovery pipe

23a、 23b、 24a、 24b、 29a、 29b、 30a、 30b:回收嘴32:液体供排系统40:镜筒 23a, 23b, 24a, 24b, 29a, 29b, 30a, 30b: recovery nozzles 32: the liquid supply and discharge system 40: barrel

44、 46、 48: Y轴干涉计 44, 46, 48: Y-axis interferometer

47X、 49X: X移动镜 47X, 49X: X movable mirror

47Y!、 47Y2、 49Y!、 49Y2: Y移动镜 47Y !, 47Y2, 49Y !, 49Y2: Y movable mirror

49、 49,:槽 49, the slot 49 ,:

50、 50,、 50":晶片载台装置70:本体部 50, 50 ,, 50 ": wafer stage apparatus 70: main body portion

72a〜72d:辅助板80~87:晶片载台驱动部 80 to auxiliary plate 87:: a wafer stage drive section 72a~72d

80、 81、 136Y!、 136Y2、 138Y!、 138Y2、 186、 187、 188、 189: Y轴线性导件(Y轴线性发动机) 80, 81, 136Y !, 136Y2, 138Y !, 138Y2, 186, 187, 188, 189: Y-axis linear guide (Y-axis linear motor)

82、 83、 84、 85、 86、 87、 136X、 138X、 180、 181: X轴线性导件(X 轴线性发动机)90a:照射系统90b:受光系统91:前端透镜93、 93,、 93":密封构件、弹性密封构件94:平板95:泼水艱100:曝光装置111a:凸缘部111b:段部111c:突部116:标线片干涉计118、 118A:干涉计系统124、 124A:晶片载台驱动部151X。 151X2、 151X3、 15DQ、 151Y" 151Y2:干涉计171:第一驱动部172:第二驱动部178、 179: X可动件182、 183、 184、 185: Y可动件195:第一连接机构196:第二连接机构ALG1、 ALG2:对准系统B11X、 B12X、 B11Y、 B12Y、 B13Y:测轴AX:光轴FM1、 FM2:基准标记板Hl、 H2:晶片保持具IA:曝光区域IF1、 BF5、 IF6: X轴干涉计IF2、 IF3、 IF4: Y轴干涉计IL:照明用光(曝光用光) Lq:液体MST、 MST,:测量载台PL:投影光学系统PU:投影单元R:标线片RAa、 Rab:标线片对准;f企测系统RST:标线片载台Sb、 Sc、 Se:端面Wl、 W2:晶片WST1、 WST2、 WST1,、 82, 83, 84, 85, 86, 87, 136X, 138X, 180, 181: X-axis linear guide member (X axis linear motors) 90a: illumination system 90b: light receiving system 91: tip lens 93, 93 ,, 93 " : seal member, the elastic seal member 94: plate 95: 100 splash difficult: the exposure apparatus 111 a: flange portion 111b: segments 111c: protrusion 116: reticle interferometer 118, 118A: the interferometer system 124, 124A: wafer stage driving unit 151X 151X2, 151X3, 15DQ, 151Y "151Y2:. interferometer 171: a first driving unit 172: second driving unit 178, 179: X movable member 182, 183, 184, 185: Y movable member 195: first connecting means 196: second connection means ALG1, ALG2: IA wafer holder having: an alignment system B11X, B12X, B11Y, B12Y, B13Y: measuring axis AX: axis FM1, FM2: reference mark plate Hl, H2 : exposure area IF1, BF5, IF6: X-axis interferometer IF2, IF3, IF4: Y-axis interferometer of IL: an illumination light (exposure light) Lq is: liquid MST, MST ,: measurement stage PL: projection optical system PU : projection unit R: reticle RAa, Rab: reticle alignment; F enterprise measurement system RST: a reticle stage Sb, Sc, Se: end surface Wl, W2: wafer WST1, WST2, WST1 ,, WST2'、 WST1"、 WST2":晶片载台具体实施方式第一实施形态:以下,依图1~图IO说明本发明的第一实施形态。 WST2 ', WST1 ", WST2": wafer stage DETAILED DESCRIPTION First Embodiment: Hereinafter, according to FIGS. 1 to IO described first embodiment of the present invention. 在图l,表示第一实施形态的曝光装置100的概略构成。 In Fig l, of the first embodiment showing a schematic configuration of the exposure apparatus 100. 此曝光装置100, 是步进扫描(step and scan)方式的投影曝光装置,即所谓扫描步进机(也称为扫描机)。 This exposure apparatus 100 is a scanning projection exposure apparatus by a step (step and scan) mode, i.e., a so-called scanning stepper (also called a scanner). 此曝光装置100具备:照明系统10;标线片载台RST,用以保持当作掩膜使用的标线片R;投影单元PU;晶片载台装置50,具有当作第一、第二载台使用的晶片载台WST1、 WST2;偏轴对准(off axis alignment)系统ALG1、 ALG2,当作第一、第二标记检测系统;及这些构件的控制系统。 This exposure apparatus 100 comprises: an illumination system 10; the RST reticle stage, for holding a reticle R as a mask used; the PU projection unit; wafer stage device 50, having as a first, a second carrier a wafer stage used in stage WST1, WST2; off-axis aligned (off axis alignment) system ALG1, ALG2, as a first, a second mark detection system; and a control system of these components. 在晶片载台WST1、 WST2上,载置作为a的晶片。 In the wafer stage WST1, the WST2, is placed as a wafer. 在图1,在晶片载台WST1上载置晶片Wl,在晶片载台WST2上载置晶片W2。 In FIG 1, the wafer stage WST1 Wl of the wafer is placed on, is placed on wafer W2 on wafer stage WST2. 前述照明系统10,例如日本特开2001-313250夸公才MJ^应于此的美国专利申请公开第2003/0025890号说明书所揭示,包含:光源、照度均匀化光学系统(舍有光学积分器)、分束器、中继透镜、可变ND滤光片、标线片遮帘等(均未图标)。 The illumination system 10, for example, Japanese Patent Laid-Open 2001-313250 boast well before this should MJ ^ U.S. Patent Application Publication No. 2003/0025890 disclosed, comprising: a light source, an illuminance uniformity optical system (optical integrator homes) , a beam splitter, a relay lens, a variable ND filter, a reticle blind and the like (none shown). 此照明系统10,将标线片遮帘所限制的标线片R上的狹缝状照明区域,通过照明用光(曝光用光)IL (作为能量光束)以大致均匀的照度照明。 This illumination system 10, a slit-shaped illumination area on the reticle by the reticle blind restricted R, by illumination light (exposure light) of IL (as an energy beam) to a substantially uniform illuminance illumination. 在此,照明用光BL,作为一例,使用ArF准分子激光(波长193nm)。 Here, the illumination light BL, as an example, an ArF excimer laser (wavelength 193nm). 又,光学积分器,能使用复眼透镜、杆式积分器(内面反射型积分器)或绕射光学元件等。 Further, the optical integrator, a fly-eye lens can be used, rod integrator (an internal reflection type integrator), a diffractive optical element or the like. 其它,照明系统IO,也可采用例如日本特开平6-349701号公报;Sj?于应于此的美国专利第5,534,970号等所揭示的构成。 Other, the IO illumination system, may also be used e.g. JP Patent Publication 6-349701;? Sj like U.S. Patent No. 5,534,970 to be disclosed herein a first configuration. 在本案所指定的指定国(或所选择的选择国)的国内法令所允许的范围,援用上述各公报及对应于此的美国专利申请公开说明书或美国专利的揭示,作为本i兌明书的记栽的一部分。 In this case the range of the designated states (or elected states selected) allowed domestic laws, and found in the above official gazettes of U.S. Patent Application Publication corresponding to this specification or disclosed in the U.S. Patent, the present SHEET against the i remember part of the plant. 在前述标线片载台RST上,将形成电路图案等于其图案面(在图1是下面)的标线片R,例如通过真空吸附固定。 On the reticle stage RST, a circuit pattern is formed is equal to the patterned surface (in FIG. 1 below) of the reticle R, for example by vacuum suction fixing. 标线片载台RST,例如通过包含线性发动机等的标线片载台驱动部11 (在图1未图标,参照图5),能在垂直于照明系统10的光轴( 一致于后述的投影光学系统PL的光轴AX)的XY平面内微驱动,并且能朝既定的扫描方向(在此,设为与图l纸面正交方向的Y轴方向)以所指定的扫描速度驱动。 The RST reticle stage, for example by a linear motor comprising a reticle stage drive unit such as 11 (not shown in FIG. 1, refer to FIG. 5), in that the optical axis of the illumination system can be 10 (corresponding to the later-described vertical the projection optical system PL of the optical axis AX) in the XY plane micro drive, and can toward a predetermined scanning direction (in this case, is set to the direction perpendicular to the paper surface in FIG. l Y-axis direction) in a designated scanning speed driving. 标线片载台RST的载台移动面内的位置,是通过标线片激光干涉计(以下称为"标线片干涉计")116,通过移动镜15,例如以0.5〜lnm程度的分解能持续检测。 Reticle stage RST within the stage position of the movable surface, is by a reticle interferometer laser (hereinafter referred to as "reticle interferometer") 116 via a movable mirror 15, for example, the degree of decomposition can 0.5~lnm continued testing. 在此,实际上,虽在标线片载台'RST上设置具有正交于Y 轴方向的反射面的Y移动镜与具有正交于X轴方向的反射面的X移动镜, 对应这些移动镜i殳置标线片Y干涉计与标线片X干涉计,但在图1以移动镜15、标线片干涉计116为代表这些元件来表示。 Here, in fact, though contained in the reticle stage 'is provided having a reflection surface orthogonal to the Y-axis direction of the movable mirror and the X-Y movable mirror having a reflection surface orthogonal to the X-axis direction on the RST, corresponding to these mobile i Shu opposing mirror reticle Y interferometer and reticle X interferometer, interference but to move the mirror 15 1, FIG terms reticle 116 is represented on behalf of these elements. 又,也可例如将标线片载台RST的端面镜面加工来形成反射面(相当于上述的X移动镜、Y移动镜的反射面)。 But it may also be e.g. a reticle stage RST end face polished in order to form a reflection surface (corresponding to the above-described X movable mirror, Y movable mirror reflective surface). 又,替代朝X轴方向延伸的反射面(使用于标线片载台RST 的扫描方向(在本实施形态是Y轴方向)的位置检测),也可使用至少一个直角^»射镜(corner cube mirror)(例如retroreflector)。 Further, instead of the reflective surface extending in the X axis direction (scanning direction of the reticle stage RST (in the present embodiment is a Y-axis direction) to be detected), can also be used at least at a right angle ^ »mirror (corner cube mirror) (e.g. retroreflector). 在此,标线片Y干涉计与标线片X干涉计的一方,例如标线片Y干涉计,是具有2轴测长轴的2轴干涉计,才艮据此标线片Y干涉计的测量值,除了标线片载台RST 的Y位置外,也能测量Z轴周围的旋转方向(6z方向)的旋转。 Here, the reticle Y interferometer and reticle X interferometer one meter, such as reticle Y interferometer, having a major axis of the second shaft 2 axonometric interferometer, whereby only Gen reticle Y interferometer measurements, in addition to the Y position of reticle stage RST, but also can measure the rotation around the Z-axis direction (direction 6Z) rotation. 标线片千涉计116的测量值,送至主控制装置20 (在图1未图标,参照图5),主控制装置20,根据此标线片干涉计116的测量值算出标线片载台RST的X、 Y、 6z方向的位置,并且冲艮椐此算出结果控制标线片载台驱动部ll,藉此来控制标线片载台RST的位置(及速度)。 Reticle intervention measured value 116, to the main controller 20 (not shown in FIG. 1, see FIG. 5), the main controller 20, based on this measurement value of reticle interferometer calculated reticle 116 meter stage RST X, Y, 6z direction position, and this calculation result noted in Burgundy red controlling reticle stage drive section ll, thereby to control the reticle stage RST in the position (and velocity). 在标线片R的上方,将使用曝光波长的光的TTR (Through The Reticle) 对准系统所构成的一对标线片对准检测系统RAa、 RAb沿X轴方向隔既定距离设置,用以通过投影光学系统PL将标线片R上的标线片标记与所对应的基准标记板上的基准标记同时观察。 Above the reticle R, using the light exposure wavelength TTR (Through The Reticle) separated a predetermined distance is provided a pair of reticle alignment detection system composed alignment system RAa, RAb the X-axis direction, for simultaneously observed by the projection optical system PL the reticle reference mark marked on the reticle R corresponding to the fiducial mark plate. 此等标线片对准检测系统RAa、 RAb, 使用例如与日本特开平7-176468号7>报^于应于此的美国专利第5,646,413 号等所揭示的同样的构成。 These reticle alignment detection systems RAa, RAb, for example, the same configuration JP 7-1764687> ^ U.S. Patent No. packets to be equal to 5,646,413 herein disclosed. 在本案所指定的指定国(或所选择的选择国)的国内法令所允许的范围,援用上述公报及对应于此的美国专利的揭示,作为本说明书的记载的一部分。 In this case the range of the designated states (or elected states selected) national laws allow, and to invoke those disclosed in U.S. Patent Publication corresponding thereto, as described in the present specification part. 投影单元PU,配置于图1的标线片载台RST的下方。 Projection unit PU, is disposed below reticle stage RST in FIG. 1 in. 投影单元PU, 包含:镜筒40;及投影光学系统PL,由在该镜筒40内以既定的位置关系保持的多个光学元件组成。 A projection unit PU, comprising: a barrel 40; and the projection optical system PL, a plurality of optical elements held in a predetermined positional relationship within the barrel 40. The. 投影光学系统PL,例如使用由具有Z轴方向的共同光轴AX的多个透镜(透镜元件)所构成的折射光学系统。 The projection optical system PL, for example, a refractive optical system composed of a plurality of lenses having a common optical axis AX in the Z-axis direction (lens elements) constituted. 此投影光学系统PL,例如在两侧远心具有既定的投影倍率(例如1/4倍、1/5倍或1/8倍)。 This projection optical system PL, for example, has a predetermined projection magnification telecentric on both sides (e.g., 1/4, 1/5-fold or 1/8). 因此,若以来自照明系统10的照明用光IL《吏标线片R的照明区域照明,由通过此标线片R的照明用光IL,通过投影单元PU (投影光学系统PL), 将该照明区域内的标线片R的电路图案的缩小像(电路图案的一部分的缩小像)形成于在表面涂布有光刻胶(感光剂)的晶片上。 Therefore, if the illumination light IL from illumination system 10 of "Official illumination area of ​​reticle R, by illumination light IL from the reticle R of this, by the projection unit PU (projection optical system PL), the the circuit pattern of reticle R within the illumination area is reduced image (reduced image of a portion of the circuit pattern) formed on the wafer surface is coated with a photoresist (photosensitive agent). 又,在本实施形态的曝光装置100,如后迷由于是进行适用液浸法的曝光,故伴随数值孔径NA实质上增大,标线片侧的孔径也变大。 Further, in 100, such as the fan of the present embodiment is an exposure apparatus since exposure applying the liquid immersion method, it is accompanied by the numerical aperture NA substantially increases, the aperture on the reticle side becomes large. 因此,在仅以透镜构成的折射光学系统,要满足珀兹伐(Petzval)条件变成困难,而有使投影光学系统大型化的趋势。 Thus, only a refractive lens composed of an optical system, to satisfy the Petzval (the Petzval) condition becomes difficult, while the size of the projection optical system trend. 为了要避免这种投影光学系统的大型化,也可使用包含反射镜与透镜所构成的反射折射系统(catadioptric系统)。 In order to avoid such a large projection optical system, it may also be used comprise catadioptric system (catadioptric system) reflector and lens configuration. 又,本实施形态,在构成投影光学系统PL的最像面侧(晶片侧)的透镜(以下,称为"前端透镜")91与晶片载台WST1或WST2上的晶片之间(或前端透镜91与晶片载台WST1或WST2之间),设置用以局部供应液体的液体供排系统32。 Further, in this embodiment, the lens in the most image plane side (wafer side) constituting projection optical system PL (hereinafter, referred to as "tip lens") between the wafer 91 on the wafer stage WST1 and WST2, or (or tip lens between the carrier 91 and wafer stage WST1 or WST2), arranged to supply a liquid partially liquid supply and discharge system 32. 在图1,表示构成此液体供排单元之嘴,来代表液体供排系统32。 In FIG 1, this shows a configuration of the liquid supply and discharge of the nozzle unit, to represent liquid supply and discharge system 32. 又,对液体供排系统32的构成等,将予后述。 Further, the liquid supply and discharge system 32 and the like constituting, it will be described later. 前述晶片载台装置50具备:基盘12;晶片载台WST1、 WST2,配置于该基盘12上面的上方;干涉计系统118 (参照图5),包含用来测量所述晶片载台WST1、 WST2的位置的干涉计的位置测量装置;及晶片载台驱动部124(参照图5),用以驱动晶片载台WST1、 WST2。 The wafer stage apparatus 50 comprises: a base plate 12; wafer stage WST1, WST2, is disposed above the upper base plate 12; interferometer system 118 (refer to FIG. 5), comprising a stage for measuring the wafer WSTl, position measuring means and WST2 meter interference position; and wafer stage drive section 124 (see FIG. 5), for driving the wafer stage WST1, WST2. 在晶片载台WST1、 WST2的底面,将未图标的非接触轴承,例如真空预压型空气静压轴承(以下,称为r气垫J )设置于多个位置,由从所述气垫朝基盘12上面所喷出的加压空气的静压,在基盘12上面的上方将晶片载台WST1 、 WST2通过数ji m程度的间隙非接触地浮起支撑。 In the non-contact bearing wafer stage WST1, WST2 bottom surface, not shown to, for example, a vacuum preload type hydrostatic air bearing (hereinafter, referred to as a cushion r J) disposed in a plurality of positions, from the base plate 12 toward the air cushion discharging pressurized air above the static pressure, above the base plate 12 above the wafer stage WST1, WST2 supported by a number of floating degree ji m gap without contact. 又,晶片载台WST1、 WST2,由晶片载台驱动部124,独立于X轴方向(图l纸面内的左右方向)及Y轴方向(与图l纸面正交的方向)能沿二维方向驱动。 Further, when wafer stage WST1, WST2, the wafer stage drive section 124, independently of the X-axis direction (horizontal direction in the drawing of FIG. L) and the Y-axis direction (the direction perpendicular to the plane of FIG. L) movable along two driving dimension. 在基盘12上,如图2的俯视图所示,将一对X轴线性导件(朝X轴方向延伸的X固定件)86、 87沿Y轴方向隔既定间隔配置。 On the base plate 12, shown in plan view in FIG. 2, the pair of X axis linear guides (X stator extending in the X-axis direction) 86, 87 spaced a predetermined interval along the Y-axis direction. 这些X轴线性导件86、 87,例如由内设永久》兹4失群组(沿X轴方向以既定间隔且交替配置的N极磁铁与S极磁铁的多组所构成)的磁极单元来构成。 The X axis linear guides 86, 87, for example by means of a permanent "4 hereby lost pole group (X axis direction at a predetermined distance and alternately arranged N pole magnet and the S pole magnet formed of a plurality of sets) of features constitution. 在这些X轴线性导件86、 87上方,设置各两个滑件82、 84及83、 85,形成将所对应的X轴线性导件86、 87从上方包围的状态且非接触。 86, 87 above the X-axis linear guides, arranged two each slider 82, 84 and 83, 85, 86 are formed, and 87 surrounded by a non-contact state from above corresponding to X-axis linear guide. 即,合计四个滑件82, 84、 83、 85,具有截面倒U字形的形状,形成将X轴线性导件86、 87从上方及侧方包围,对所对应的X轴线性导件86、 87分别通过未图标的气垫例如以数nm程度的间隙浮起支撑。 That is, a total of four sliding members 82, 84, 83, 85, having a cross-sectional shape of an inverted U-shaped, forming the X-axis linear guides 86, 87 from above and surrounds a side of X-axis linear guides 86 corresponding to , respectively, through the air cushion 87 (not shown), for example, several nm to the extent supported by levitation gap. 各滑件82、 84、 83、 85,例如由分别内设沿X轴方向以既定间隔配置的电枢线圏的电枢单元来构成。 Each slider 82, 84, 83, 85, for example constituted by armature units are equipped armature rings of the X-axis direction are arranged at predetermined intervals. 即,在本实施形态,由电枢单元所构成的滑件82、 84与多兹极单元所构成的X轴线性导件86, 分别构成动圈型的X轴线性发动机。 That is, in the present embodiment, X-axis linear guide slider 82, 84 and Dodds pole unit constituted by the armature unit 86 is constituted, constitute moving coil type X-axis linear motors. 同样地,由滑件83、 85与X轴线性导件87,分别构成动圈(moving coil)型的X轴线性发动机。 Similarly, the slider 83, 85 and X-axis linear guide 87 constitute moving coil (moving coil) type X-axis linear motor. 以下,对上述四个各X轴线性发动机,使用与构成各可动件的滑件82、 84、 83、 85相同的符号,称为X轴线性发动机82、 X轴线性发动机84、 X轴线性发动机83、 X轴线性发动纟几85。 Hereinafter, 82, 84, 83, the same reference numerals in each slide member 85 of the movable member of each of the four X-axis linear motor, using a configuration, referred to as X-axis linear motors 82, 84, the axis X-X axis of the engine motor 83, X axis 85 of the engine a few Si. 上迷四个X轴线性发动机中,构成两个X轴线性发动机82、 83的滑件, 分别固定于Y轴线性导件80 (当作朝Y轴方向延伸的Y固定件)的长边方向的一端与另一端。 The four X-axis linear motor fans constituting two X-axis linear motor slider 82, 83, are fixed to (as a Y stator extending in the Y-axis direction) in the longitudinal direction of the Y axis linear guide 80 One end of the other end. 又,构成另外的两个X轴线性发动机84、 85的滑件, 固定于Y轴线性导件81 (当作朝Y轴方向延伸的Y固定件)的一端与另一端。 Further, the slide member constituting a further two X axis linear motors 84, 85 is fixed to the Y-axis linear guide 81 (as a Y stator extending in the Y-axis direction) end and the other end. 因此,Y轴线性导件80、 81,由各一对的X轴线性发动机82、 83、 84、 85,使其沿X轴分别驱动。 Thus, Y-axis linear guides 80, 81, each pair X axis linear motors 82, 83, 84, 85, so that the X-axis driving, respectively. 前述各Y轴线性导件80、 81,例如由分别内设沿Y轴方向以既定间隔配置的电枢线圏的电枢单元来构成。 Each of the Y-axis linear guides 80, 81, for example, an armature unit composed of armature rings of the Y-axis direction are respectively equipped at predetermined intervals arranged. 一Y轴线性导件81,以插入状态设置于形成在晶片载台WST1的开口。 A Y-axis linear guide 81, disposed in the inserted state is formed on the wafer stage WST1 opening. 在此晶片载台WST1的上述开口的内部,设置具有永久》兹铁群组(例如沿Y 轴方向以既定间隔且交替配置的N极磁铁与S极磁铁的多组所构成)的磁极单元。 Inside the opening of wafer stage WST1 is provided with a permanent magnetic pole unit "hereby iron group (e.g. Y-axis direction at a predetermined distance and alternately arranged N pole magnet and the S pole magnet formed of a plurality of sets) of. 由此》兹极单元与Y轴线性导件81,构成将晶片载台WST1沿Y轴方向驱动的动f兹型的Y轴线性发动机。 Whereby "hereby pole unit and Y-axis linear guide 81 constitute moving f hereby type Y-axis linear motor drives wafer stage WST1 in the Y-axis direction. 同样地,另一Y轴线性导件80,以插入状态设置于形成在晶片载台WST2的开口。 Similarly, the other Y-axis linear guide 80, disposed in the inserted state is formed in the opening of wafer stage WST2. 在此晶片载台WST2的上述开口的内部,设置与晶片载台WST1侧同样的^^极单元。 Inside the opening of wafer stage WST2 in the same ^^ provided with wafer stage WST1 side pole unit. 由此》兹极单元与Y 轴线性导件80,构成将晶片载台WST2沿Y轴方向驱动的动》兹(moving magnet)型的Y轴线性发动机。 Whereby "hereby pole unit and Y-axis linear guide 80 constitute the wafer stage WST2 in the Y-axis direction driving movement" hereby (moving magnet) type Y-axis linear motor. 在以下,对这些Y轴线性发动机,使用与构成各固定件的线性导件81、 80相同的符号,称为Y轴线性发动机81、 Y轴线性发动机80。 In the following, these Y-axis linear motor, using a linear guide member 81 constituting each of the fixing member, the same reference numerals 80, referred to as Y-axis linear motor 81, Y-axis linear motor 80. 在本实施形态,包含X轴线性发动机82〜85及Y轴线性发动机80、 81, 来构成图5所示的晶片载台驱动部124。 In the present embodiment, X-axis linear motor comprising 82~85 and Y axis linear motors 80, 81, constitute the wafer stage drive section 124 shown in FIG. 构成此晶片载台驱动部124的上述各线性发动机,则由图5所示的主控制装置20控制。 Each stage driving linear motor unit constituting the wafer 124 by the main controller 20 shown in FIG. 5 control. 又,由使一对X轴线性发动机84、 85(或82、 83)分别所产生的推力稍樣丈不同,能控制晶片载台WST1 (或WST2)的偏摇(yawing)。 And by the pair of X axis linear motors 84, 85 (or 82, 83), respectively, the thrust generated by a slightly different kind of feet, can be controlled WSTl wafer stage (or and WST2) yawing (yawing). 在本实施形态,各晶片载台WST1、 WST2,虽以单一的载台图标,但实际上,具备:载台本体,由Y轴线性发动机81、 80分别驱动;晶片台, 通过Z.调平驱动才几构(例如音圏发动机)栽置于该载台本体的上部,对载台本体相对地沿Z轴方向及X轴周围的旋转方向(6x方向)、Y轴周围的旋转方向(6y方向)微驱动。 In the present embodiment, each of the wafer stage WST1, WST2, although the icon in a single stage, but in practice, comprising: a stage main body, the Y axis linear motors 81, 80 are driven; wafer stage, by leveling Z. only a few drive mechanism (e.g. rings of the engine sound) planted placed on top of the stage main body, the main body opposite to the stage Z axis direction and the rotation direction around the X-axis (direction 6X), the rotational direction around the Y-axis (6Y direction) microdrive. 在前述晶片载台WST1上(晶片台上),如图1所示,设置晶片保持具Hl,由真空吸附等保持晶片Wl。 In the upper wafer stage WST1 (wafer stage), as shown, provided the wafer holder 1 Hl, Wl wafer is held by a vacuum suction or the like. 晶片保持具Hl,如图3的立体图所示, 具备:本体部70,俯视(从上方观察)大致呈正方形;四片辅助板72a〜72d, 以乂人上方重叠于本体部70的方式配置于晶片Wl的载置区域周围。 Wafer holder on Hl, as shown in FIG. 3 a perspective view, comprising: a body portion 70, a top view (viewed from above) substantially square; four auxiliary plate 72a~72d, to overlap the above embodiment qe human main body portion 70 is disposed in the placing area surrounding the wafer Wl. 这些辅助板72a〜72d的表面,形成与晶片Wl的表面大致相同的高度。 These 72a~72d auxiliary plate surface, is formed with the surface of the wafer Wl substantially the same height. 又,辅助板72a〜72d,也可由一个构件构成。 Further, the auxiliary plate 72a~72d, a member may also be configured. 又,若能在投影光学系统PL的像面侧保持液体Lq,也可在晶片表面与辅助板表面之间有段差。 Further, if the liquid Lq remains on the image plane side of the projection optical system PL, may have a step difference between the surface and the auxiliary plate surface of the wafer. 在晶片载台WST1的上面,将X移动镜17X (在X轴方向的一端(+X 侧端)具有与X轴正交的^Jt面)朝Y轴方向延设,将Y移动镜17Y (在Y轴方向的一端(+Y侧端)具有与丫轴正交的>^射面)朝X轴方向延i殳。 In the above wafer stage WST1, an X movable mirror 17X (at one end (+ X side end) having the X-axis direction and the X ^ Jt plane perpendicular to the axis) arranged in the Y-axis direction, a Y movable mirror 17Y ( at one end of the Y-axis direction (+ Y side end) having the axis orthogonal to the Ah> ^ emission surface) in the X-axis direction Shu i. 对这些移动镜17X、 17Y的各反射面,如图2所示,将来自构成后述的千涉计系统118 (参照图5)的干涉计的干涉计光束(测长光束)投射,由以各干涉计接收该反射光,将从各移动M射面的基准位置(一般是在投影单元PU侧面,或对准系统ALG1的侧面配置固定反射镜,以此为基准面)的位移测量,藉此,测量晶片载台WST1的二维位置。 Of movable mirrors 17X, 17Y of the respective reflecting surfaces, shown in Figure 2, counted from the intervention system 118 (explained later) (see FIG. 5) of the interferometer beams of the interferometer (measuring beam) is projected from to each of the interferometers receiving the reflection light from the reference position of each mobile exit surface M (generally in the side surface of projection unit PU or the side surface of alignment system ALG1 fixed mirror is disposed, as a reference surface) of the displacement measurement, by here, the two-dimensional position measurement of wafer stage WST1. 争交佳者为移动镜17X、 17Y的上面也设为与晶片Wl大致相同的高度。 Contention were good for the cross-movable mirror 17X, 17Y are also set above the wafer Wl substantially the same height. 在此,如图3所示,在各辅助板72a〜72d与晶片Wl之间,虽存在间隙D,但间隙D的尺寸,是以成为0.1〜lmm的方式设定。 Here, as shown, between the auxiliary plate and 72a~72d Wl of the wafer, although there is a gap D, but the size of the gap D, is set to become 3 0.1~lmm embodiment. 又,在晶片Wl,虽在其一部分存在缺口(V字形的缺口),但因此缺口的尺寸也;l^仅lmm程度,故省略图标。 Further, Wl of the wafer, although there is a part of the notch (V-shaped notch), but also the size of the gap thus; l ^ degree only lmm, the icon is omitted. 又,辅助板72a,在其一部分形成圆形开口,在其开口内,嵌入基准标记板FM1。 Further, the auxiliary plate 72a, a circular opening is formed in a portion, in its opening, insert the reference mark plate FM1. 基准标记板FM1,是使其表面与辅助板72a为大致同一面。 The reference mark plate FM1, is to make the surface of auxiliary plate 72a with substantially the same plane. 在基准标记板FM1的表面,形成至少一对标线片对准用的第一基准标记,及如后述以对准系统ALG1所4企测的第二基准标记(均未图标)等。 In the surface of fiducial mark plate FM1, forming at least a pair of first fiducial marks used for reticle alignment, a second fiducial mark, and said alignment system ALG1 the measured half 4 (neither shown) after such like. 在前述晶片载台WST2上(晶片台上),如图1所示,设置晶片保持具H2,由真空吸附等保持晶片W2。 In the upper wafer stage WST2 (wafer stage), shown in Figure 1, the wafer holder disposed H2, by the vacuum attraction holding the wafer W2. 此晶片保持具H2,是与前述的晶片保持具H1构成同样。 The wafer holder H2, and the wafer is held with the same configuration H1. 因此,在形成于构成此晶片保持具H2的一个辅助板的一部分的圓形开口内,嵌入基准标记板FM2 (在图1未图标,参照图2)。 Thus, the circular opening formed in a portion of the auxiliary plate holder H2, constituting the wafer fiducial mark plate FM2 is embedded (not shown in FIG. 1, refer to FIG. 2). 又,在晶片载台WST2的上面,将X移动镜117X(在X轴方向的一端(-X侧端)具有与X轴正交的反射面)朝Y轴方向延设,将Y移动镜117Y (在Y轴方向的一端(+Y側端)具有与Y轴正交的^Jt面)朝X轴方向延设。 Further, in the above wafer stage WST2, an X movable mirror 117X (one end (-X side end) of the X-axis direction and having a reflection surface orthogonal to the X-axis) arranged in the Y-axis direction, a Y movable mirror 117Y (at one end (+ Y side end) having the Y-axis direction and the Y ^ Jt plane perpendicular to the axis) in the X-axis direction is provided. 对这些移动镜117X、 117Y的各反射面,如图2所示,将来自构成后述的千涉计系统118的干涉计的干涉计光束(测长光束)投射,由以各干涉计接收该反射光,将来自各移动镜反射面的基准位置的位移测量,藉此测量晶片载台WST2的二维位置。 These movable mirror 117X, 117Y of the respective reflection surfaces, as shown in FIG 2 from the intervention gauge system (explained later) of the interferometer beam interferometer (measuring beam) of the projection 118, to each of the interferometers receiving the reflected light, from the displacement measurement reference position of each reflection surface of movable mirror, whereby the two-dimensional position measurement of wafer stage WST2. 又,例如,可将晶片载台WST1、 WST2的端面作镜面加工来形成移动镜(相当于前述的移动镜17X、 17Y、 117X、 117Y的反射面)。 Furthermore, for example, the wafer stage WST1, WST2 end surface formed as a mirror finished moving mirror (corresponding to the movable mirrors 17X, 17Y, 117X, 117Y of the reflecting surface). 又,在晶片载台WST1、 WS丁2彼此对向侧的面,例如在晶片载台WST1 的-X侧面,在其全面,如图IO所示,贴附密封构件93。 Further, the wafer stage WST1, the WS-butoxy opposite side surface 2 each other, e.g. contained in the -X side surface of wafer stage WST1, in its full, as shown in FIG IO, the sealing member 93 is attached. 此密封构件93, 例如使用由含氟橡胶等所构成的弹性密封构件。 This sealing member 93, for example, by the elastic sealing member made of fluorine rubber or the like. 又,替代晶片载台WST1的-X侧面,也可将密封构件93贴附于晶片载台WST2的+X侧面,也可将密封构件93贴附于晶片载台WST1的-X侧面与晶片载台WST2的+X侧面双方。 Further, -X stage WST1 side wafer Alternatively, the sealing member 93 may also be attached to the + X side surface of wafer stage WST2, or seal member 93 may be attached to the -X side surface of wafer stage WST1 to wafer stage + X side of both the stage WST2. 回到图1,在分別隔相同距离于投影单元PU的+X侧、-X侧的位置, 分别配置前述的偏轴对准系统(以下,略述为"对准系统")ALG1、 ALG2。 Returning to Figure 1, the position of each compartment in the same distance to the projection unit PU on the + X side, -X side, are arranged on the off-axis alignment system (hereinafter outlined as "alignment system") ALG1, ALG2. 这些对准系统ALG1、 ALG2,实际上,是装设于用以保持投影单元PU的保持构件。 These alignment systems ALG1, ALG2, in fact, is mounted in the holding member that holds projection unit PU. 这些对准系统ALG1、 ALG2,例如使用影像处理方式的FIA (Field Image Alignment)系统的感测器,该影像处理方式,是将对象标记的像(将不使晶片上的光刻月交感光的宽频(broadband)的抬r测光束照射于对象标记, 由来自该对象标记的反射光结像于受光面)与未图标的指针(设置于对准系统ALG1、 ALG2内的指针板上的指针图案)的像使用摄影元件(CCD等) 来才聂影后,将这些摄影信号输出。 These alignment systems ALG1, ALG2, for example, a sensor using an image processing method FIA (Field Image Alignment) system, the image processing mode, as is (without the month on the lithographic wafer cross photosensitive object labeled broadband (broadband) r measurement beam is irradiated to a subject mark lift, marked by light reflected from the object to the imaging receiving surface) of the pointer is not shown (disposed on the pointer pattern alignment system ALG1, ALG2 in the pointer panel ) to only after Nie Movies, the output signals of these photographic images using photographic element (CCD, etc.). 又,对准系统ALGl、 ALG2,不限于FIA 系统,将相干(coherent)的检测用光照射于对象标记,检测从该对象标记所产生的散射光或绕射光,或使从该对象标记所产生的两个绕射光(例如同次数的绕射光,或绕射于同方向的绕射光)干涉来检测的对准感测器,单独或适当組合使用当然可能。 Further, alignment system ALGl, ALG2, limited to the FIA ​​system, coherent (Coherent) irradiating a detection mark on the object, and detecting the scattered light or diffracted light generated by the object tag, or to the object from the generated tag the two diffracted lights (e.g. diffracted lights of the same order, or diffracted light diffracted in the same direction) alignment sensor to detect the interference, alone or in appropriate combination is of course possible. 在本实施形态,对准系统ALG1,是4吏用于形成在晶片载台WSTl上的晶片Wl的对准标记及形成在基准标记板FM1上的基准标记的位置测量等。 In this embodiment, alignment system ALG1, alignment marks 4 are formed on the wafer for officials stage WSTl wafer Wl and position measurement is formed on the reference mark plate FM1 of the reference mark, and the like. 又,对准系统ALG2,是使用于形成在晶片载台WST2上的晶片W2的对准标记及形成在基准标记板FM2上的基准标记的位置测量等。 Further, alignment system ALG2, is used to form alignment marks on wafer W2 on wafer stage WST2 and the like form position measuring reference mark on the fiducial mark plate FM2. 来自这些对准系统ALG1、 ALG2的资料,如图5所示,供应至主控制装置20。 From these, ALG2 information, as shown in FIG alignment system ALG1 5, is supplied to the main controller 20. 其次,参照图2说明干涉计系统118的构成等。 Next, with reference to FIG. 2 illustrates a system including the interferometer 118 and the like. 如图2所示,干涉计系统118,具有:三个Y轴干涉计46、 48、 44,分别具有测轴BI2Y、 BI3Y、 BI1 Y,平行于通过投影光学系统PL的投影中心(光轴AX )、对准系统ALG1 、 ALG2的各检测中心的Y轴;及两个X轴干涉计16、 18,分别具有测轴BI1X、 BI2X,平行于连结投影光学系统PL的投影中心(光轴AX)及对准系统ALG1、 ALG2的检测中心的X轴。 2, interferometer system 118, comprising: three Y-axis interferometers 46, 48, 44, each having a sensitive axis of BI2Y, BI3Y, BI1 Y, parallel to a projection center of the projection optical system PL (optical axis AX ), alignment system ALG1, Y axes of the respective detection centers ALG2; and two X-axis interferometers 16, 18, each having a measuring axis BI1X, BI2X, parallel to the connecting projection center of the projection optical system PL (optical axis AX) and alignment systems ALG1, X axis ALG2 detection center. 在此,当晶片载台WST1位于投影光学系统PL的光轴正下方的位置附近的区域(第一区域),对该晶片载台WST1上的晶片进行曝光时,由X 轴干涉计18、 Y轴干涉计46来管理晶片载台WST1的位置。 In this case, when wafer stage WST1 is located in the optical axis of projection optical system PL positive region near a position below the (first region), the wafer on wafer stage WST1 is exposed by an X-axis interferometer 18, Y axis interferometer position count 46 of wafer stage WST1. 以下,将由此X轴干涉计18、 Y轴干涉计46各测长轴所规定的坐标系统称为第一曝光坐标系统。 Hereinafter, whereby the X-axis interferometer 18, Y-axis interferometer coordinate system set by the measurement axes of meter 46 as a first exposure coordinate system. 又,晶片载台WST2当投影光学系统PL位于第一区域,对该晶片载台WST2上的晶片进行曝光时,由X轴干涉计16、 Y轴干涉计46来管理晶片载台WST2的位置。 Furthermore, if the wafer stage WST2 when the projection optical system PL in the first region, the wafer on the wafer stage WST2 is exposed by an X-axis interferometer 16, Y-axis interferometer 46 to manage the position of wafer stage WST2. 以下,将由此X轴干涉计16、 Y轴干涉计46各别的测长轴所规定的坐标系统称为第二曝光坐标系统。 Hereinafter, whereby the X-axis interferometer 16, Y-axis interferometer 46 to a predetermined coordinate system respective measuring axis as a second exposure coordinate system. 又,当晶片载台WSTl,位于对准系统ALG1的检测中心正下方的位置附近的区域(第二区域),要进行形成于其晶片载台WST1上的晶片的对准标记的检测时,例如要进行后述的晶片对准时,由X轴干涉计18、 Y轴干涉计48来管理晶片载台WST1的位置。 Further, when wafer stage WSTL, located in a region (second region) close to the position of alignment systems ALG1 directly below the center of detection, to detect the wafer alignment marks on the wafer stage WSTl formed thereon, e.g. after the wafer is aligned to be described later, the interference by the X-axis counter 18, Y-axis interferometer 48 to the position count of wafer stage WST1. 以下,将由此X轴干涉计18、 Y轴干涉计48各测长轴所规定的坐标系统称为第一对准坐标系统。 Hereinafter, whereby the X-axis interferometer 18, Y-axis interferometer coordinate system set by the measurement axes of meter 48 as a first alignment coordinate system. 又,当晶片载台WST2,位于对准系统ALG2的检测中心正下方的位置附近的区域(第三区域),要进行形成于其晶片载台WST2上的晶片的对准标记的检测时,例如要进行后述的晶片对准时,由X轴干涉计16、 Y轴干涉计44来管理晶片载台WST2的位置。 Further, when the wafer stage and WST2, is located in a region (third region) alignment system ALG2 vicinity of the position directly below the center of detection, to detect the wafer alignment marks formed thereon and WST2 wafer stage, e.g. after the wafer is aligned to be described later, the interferometer 16 by the X-axis, Y-axis interferometer 44 to manage the position of wafer stage WST2. 以下,将由此X轴干涉计16、 Y轴干涉计44各別的测长轴所规定的坐标系统称为笫二对准坐标系统。 Hereinafter, whereby the X-axis interferometer 16, Y-axis interferometer 44 provided for respective measuring axes coordinate system referred Zi two alignment coordinate system. 从上述的说明得知,在本实施形态,来自X轴干涉计18、 16的干涉计光束,在晶片载台WST1、 WST2的移动范围的全域持续分别照射于晶片载台WST1、 WST2的移动镜17X、 117X。 From the above description that, in the present embodiment, from the X-axis interferometer beams gauge 18, 16 interference, the wafer stage WSTl, sustained respectively the irradiation range of movement and WST2 global wafer stage WSTl, and WST2 movable mirror 17X, 117X. 因此,对X轴方向,使用投影光学系统PL曝光时,即使使用对准系统ALG1 、 ALG2时等任何情形,晶片载台WST1、 WST2的位置,则由X轴干涉计18、 16来管理。 Thus, the X-axis direction, using any case projection optical system PL during exposure, even when using alignment systems ALG1, ALG2 and the like when the wafer stage WST1, WST2 position by X-axis interferometer 18, 16 is managed. 这些.X轴干涉计18、 16,是具有相对于Y轴方向及Z轴方向离开的至少三支光轴的多轴干涉计,各光轴的输出值能独立测量。 These .X axis interferometer 18, 16, having at least three multi-axis with respect to the optical axis of the Y-axis direction and the Z-axis direction away from the interferometer, the output values ​​of each optical axis can be measured independently. 因此,这些X轴干涉计18、 16,除了晶片载台WST1、 WST2的X轴方向的位置测量以外,也能测量Y轴周围的旋转量(横摇量(rolling))及Z轴周围的旋转量(偏摇量)。 Thus, the X-axis interferometers 18, 16, in addition to the wafer stage WSTl, position measuring X-axis direction and WST2 outside, can measure the rotation around the rotation amount (rolling amount (Rolling)) around the Y-axis and Z-axis amount (yawing amount). 又,上述Y轴干涉计46、 48、 44,例如是具有相对于Z轴方向离开的各二支光轴的二轴千涉计,各光轴的输出值能独立测量。 Further, the Y-axis interferometers 46, 48, 44, for example having two shafts with respect to each of the intervention count two Z-axis direction away from the optical axis of the output values ​​of each optical axis can be measured independently. 因此,这些Y轴干涉计46、 48、 44,除了晶片载台WST1、 WST2的Y轴方向的位置测量以外, 也能测量X轴周围的旋转量(俯仰量(pitching))。 Thus, these Y-axis interferometers 46, 48, 44, in addition to the wafer stage WSTl, Y-axis direction position measurement and WST2 outside, can also be measured rotation amount around the X-axis (pitching amount (pitching)). 又,上述多轴干涉计,也可倾斜45。 And the multi-axis interferometer 45 can also be tilted. 而设置于晶片载台WST1、 WST2 的反射面,对设置于将投影光学系统PL载置的架台(未图标)的反射面照射激光束,来检测相对于投影光学系统PL的光轴方向(Z轴方向)的相对位置数据。 Provided on the wafer stage WSTl, reflective surface and WST2, the settings on the projection optical system PL mounting a gantry (not shown) of the reflecting surface irradiated with the laser beam, is detected with respect to the optical axis direction of the projection optical system PL (Z axis direction) relative position data. 其次,依图4说明前述液体供排系统32。 Next, according to FIG. 4 illustrates the liquid supply and discharge system 32. 此液体供排系统32具备:液体供应装置5;液体回收装置6;供应管21、 22、 27、 28,连接于液体供应装置5;及回收管23、 24、 29、 30,连接于液体回收装置6。 The liquid supply and discharge system 32 comprising: liquid supply means 5; liquid recovery unit 6; a supply pipe 21, 22, 27, 28, connected to a liquid supply unit 5; and the recovery pipe 23, 24, 29, 30, connected to the liquid recovery 6 apparatus. 前述液体供应装置5包括:液体槽;加压泵;温度控制装置;及多个阀, 用以控制对M应管21、 22、 27、 28的液体的供应、停止等。 Liquid supply unit 5 comprising: a liquid tank; pressurizing pump; a temperature control means; and a plurality of valves for controlling the tube 21 should be of M, 22, 27, 28 of the liquid supply is stopped and the like. 各阀,例如较佳者为使用流量控制阀,不仅液体的供应、停止,而且也能进行流量调整。 Valves, for example, preferred are the use of flow control valves, not only the supply of liquid is stopped, and the flow rate adjustment can be performed. 前述温度控制装置,是用来将液体槽内的液体温度,调整为与收纳有例如投影单元PU等所构成的曝光装置本体的室(未图标)内的温度相同程度的温度。 The temperature control means is used to a liquid temperature of the liquid tank, the chamber is adjusted to the exposure apparatus main body housed projection unit PU or the like made of, for example, (not shown) the same level of temperature in the temperature. 前述供应管21,将其一端连接于液体供应装置5,将其它端分支为三个, 在各分支端分別形成(或设置)由尖细嘴所构成的供应嘴21a、 21b、 21c。 The supply pipe 21, one end thereof is connected to liquid supply unit 5. The other end branches into three, is formed (or provided) in the respective branches by the end of the supply nozzle constituted of a tapered nozzle 21a, 21b, 21c. 这些供应嘴21a、 21b、 21c的前端,位于前述的前端透镜91 (参照图1)附近,沿X轴方向隔既定间隔且近4矣于曝光区域IA (与前述槽上的照明区域共同作用的像面上的区域)的+Y来配置。 These supply nozzles 21a, 21b, 21c of the front end, located near the front end of the lens 91 (see FIG. 1), separated a predetermined X-axis direction interval and nearly four men to exposure area IA (interaction illumination area on the groove with surface image region) to the + Y configuration. 以供应嘴21a为中心,将供应嘴21b、 21c配置于大致左右对称。 To supply nozzle 21a in the center, the supply nozzles 21b, 21c arranged in a substantially symmetrical. 前述供应管22,将其一端连接于液体供应装置5,将其它端分支为三个, 在各分支端分别形成(或设置)由尖细嘴构成的供应嘴22a、 22b、 22c。 The supply tube 22, one end thereof is connected to liquid supply unit 5. The other end branches into three, is formed (or provided) at each end of each branch supply nozzle consisting of a tapered nozzle 22a, 22b, 22c. 这些供应嘴22a、 22b、 22c的前端,位于前端透镜91附近,沿X轴方向隔既定间隔且近接于曝光区域IA的-Y来配置。 These supply nozzles 22a, a front end 22b, 22c located near the front end of the lens 91, separated a predetermined interval along the X-axis direction and proximity of exposure area IA in the -Y configured. 在此情形,供应嘴22a、 22b、 22c, 隔着曝光区域IA对向于供应嘴21a、 21b、 21c来配置。 In this case, supply nozzles 22a, 22b, 22c, of the exposure area IA via 21a, 21b, 21c is configured to supply nozzles. 前述供应管27,将其一端连接于液体供应装置5,将其它端形成(或设置)为由尖细嘴所构成的供应嘴27a。 The supply tube 27, one end thereof is connected to liquid supply unit 5. The other end is formed (or provided) by the supply nozzle constituted of a tapered nozzle 27a. 此供应嘴27a的前端,位于前端透镜91附近,近接于曝光区域IA的-X侧来配置。 This front end of supply nozzle 27a is located in the vicinity of tip lens 91, -X side of exposure area IA in proximity to the configuration. 前述供应管28,将其一端连接于液体供应装置5,将其它端形成(或设置)为由尖细嘴所构成的供应嘴28a。 The supply pipe 28, one end thereof is connected to liquid supply unit 5. The other end is formed (or provided) by the supply nozzle constituted of a tapered nozzle 28a. 此供应嘴28a的前端,位于前端透镜91附近,近接于曝光区域IA的+X侧,且隔着曝光区域IA对向于供应嘴27a 来配置。 This front end of supply nozzle 28a is located in the vicinity of tip lens 91, the proximity to the + X side of exposure area IA and IA of the exposure area through the supply nozzle 27a is configured. 又,不需要将用以供应液体的槽、加压泵、温度控制装置、阀等全部设于曝光装置100,至少将一部分能由设置曝光装置100的工厂等的i殳备来替代。 And, no need to supply liquid to the tank, pressurizing pump, a temperature control means, valves, etc. all provided in the exposure apparatus 100, at least a portion of the apparatus can be replaced by a set of factory where exposure apparatus 100 of Shu i. 前述液体回收装置6包括:液体槽;吸引泵;及多个阀,用以控制分别通过各回收管23、 24、 29、 30的液体的回收、停止等。 The liquid recovery device 6 comprises: a liquid tank; suction pump; and a plurality of valves for controlling respectively each of the recovery pipes 23, 24, 29, recovery of the liquid 30 is stopped and the like. 各阀,较佳者为对应前述的液体供应装置5侧的阀,使用流量控制阀。 Each of the valves, preferably by the corresponding valve of the liquid supply side of the device 5, using the flow control valve. 前述回收管23,将其一端连接于液体回收装置6,将其它端分支为二股, 在各分支端分别形成(或设置)由尾宽嘴所构成的回收嘴23a、 23b。 The recovery pipe 23, one end thereof is connected to liquid recovery unit 6. The other end branches into two sections, is formed (or provided) by the end of the wide mouth of recovery nozzles composed 23a, 23b, respectively, at each end of the branches. 在此情形,回收嘴23a、 23b,是交替配置于供应嘴22a〜22c之间。 In this case, recovery nozzles 23a, 23b, are alternately arranged between 22a~22c supply nozzles. 各回收嘴23a、 23b的前端及M应嘴22a、 22b、 22c的前端,大致沿着平行于X轴的同一直线上来配置。 Of recovery nozzles 23a, 23b and the front end of the nozzle should M 22a, 22b, 22c of the front end, disposed along an identical line up substantially parallel to the X axis. 前述回收管24,将其一端连接于液体回收装置6,将其它端分支为二股, 在各分支端分别形成(或设置)由尾宽嘴所构成的回收嘴24a、 24b。 The recovery pipe 24, one end thereof is connected to liquid recovery unit 6. The other end branches into two sections where on each branch ends are formed (or arranged) by the end of the wide mouth of recovery nozzles composed 24a, 24b. 在此情形,回收嘴24a、 24b,是在供应嘴21a〜21c之间,交替且隔着曝光区域IA分别对向于^收嘴23a、 23b来配置。 In this case, recovery nozzles 24a, 24b, the supply nozzle is between 21a~21c, exposure area IA via alternately and respectively arranged to be in close ^ mouth 23a, 23b. 各回收嘴23a、 23b的前端及^^应嘴21a、 21b、 21c的前端,大致沿着平行于X轴的同一直线上来配置。 Of recovery nozzles 23a, 23b and the front end of the nozzle should ^^ 21a, 21b, 21c of the front end, disposed along an identical line up substantially parallel to the X axis. 前述回收管29,将其一端连接于液体回收装置6,将其它端分支为二股, 在各分支端分别形成(或设置)由尾宽嘴所构成的回收嘴29a、 29b。 The recovery pipe 29, one end thereof is connected to liquid recovery unit 6. The other end branches into two sections where on each branch ends are formed (or arranged) by the end of the wide mouth of recovery nozzles composed 29a, 29b. 这些回收嘴29a、 29b,是隔着供应嘴28a配置。 The recovery nozzles 29a, 29b, 28a is across the supply nozzle configuration. 各回收嘴29a、 29b及供应嘴28a 的前端,大致沿着平行于Y轴的同一直线上来配置。 Of recovery nozzles 29a, 29b and the front end of supply nozzle 28a is substantially disposed along the same line up parallel to the Y axis. 前述回收管30,将其一端连接于液体回收装置6,将其它端分支为二股, 在各分支端分别形成(或设置)由尾宽嘴所构成的回收嘴30a、 30b。 The recovery pipe 30, one end thereof is connected to liquid recovery unit 6. The other end branches into two sections, is formed (or provided) are recovered at the end of each branch from the mouth end of the wide mouth constituted 30a, 30b. 这些回收嘴30a、 30b,是隔着供应嘴27a,且隔着曝光区域IA分别对向于回收嘴29a、 29b来配置。 The recovery nozzles 30a, 30b, is supplied via the nozzle 27a, and via the exposure area IA respectively arranged to the recovery nozzles 29a, 29b. 各回收嘴30a、 30b及供应嘴27a的前端,大致沿着平行于Y轴的同一直线上来配置。 Of recovery nozzles 30a, 30b and distal end 27a of the supply nozzle, arranged along the same line up substantially parallel to the Y axis. 又,不需要将用以回收液体的槽、吸引泵、阀等全部设于曝光装置100, 至少将一部分能由^:置曝光装置100的工厂等的设备来替代。 And no need for the recovery of the liquid tank, suction pumps, valves, etc. all provided in the exposure apparatus 100, at least a portion of the energy from the ^: configuring devices factory or the like instead of the exposure apparatus 100. 在本实施形态,上述液体,是使用能通过ArF准分子激光(波长193nm) 的超纯水(以下,除了特别需要时,简单称为"水")。 In the present embodiment, the liquid, ultrapure water by using ArF excimer laser (wavelength 193 nm) (hereinafter, except when special needs, simply referred to as "water"). 超纯水,能在半导体制造工厂容易大量获得,并且具有对涂布于晶片上的光刻胶(感光剂)或光学透镜等无不良影响的优点。 Ultra-pure water can be easily obtained in large quantities at a semiconductor manufacturing plant, and has the advantage of a photoresist coated on the wafer (photosensitive agent) or no adverse effect on the optical lenses. 又,超纯水对环境无不良影响,并且因杂质的含有量极低,故也能期待对晶片的表面及前端透镜91的表面的洗净作用。 In addition, ultra pure water has no adverse environmental impact, and due to very low impurity content, it can be expected cleaning effect on the surface of the wafer and the surface of tip lens 91. 对ArF准分子激光的水的折射率n,是大致1.44。 The refractive index n ArF excimer laser light water, is substantially 1.44. 在此水中,照明用光IL的波长,则使其短波长化为193nm x 1/n-约134nm。 In the water the wavelength of illumination light IL, the wavelength is shortened so 193nm x 1 / n- about 134nm. 前述液体供应装置5及液体回收装置6,.分别具备控制器,各控制器, 由主控制装置20来控制(参照图5)。 Liquid supply unit 5 and liquid recovery unit 6 each have a controller ,., each of the controllers, controlled by a main controller (see FIG. 5) 20. 例如,沿图4中的实线箭头A所示的方向(-Y方向)使晶片Wl (或W2)移动时,液体供应装置5的控制器, 依照主控制装置20的指示,以既定开度打开连接于供应管21的阀,使其它阀为全闭,通过设置于供应管21的供应嘴21a〜21c朝-Y方向将水供应至前端透镜91与晶片Wl (或W2)之间。 For example, in a direction (-Y direction) indicated by the solid line arrow A in FIG. 4 Wl of the wafer (or W2) is moved, the liquid supply control apparatus 5, in accordance with the main control device 20 indicates to a predetermined opening degree open valve 21 is connected to the supply pipe of the other valve is fully closed by providing the supply tube 21 of the supply nozzle 21a~21c the -Y direction between 91 and water is supplied to the Wl of the wafer (or W2) tip lens. 又,此时,液体回收装置6的控制器,依照主控制装置20的指示,以既定开度打开连接于回收管23的阀,使其它阀为全闭,通过回收嘴23a、 23b从前端透镜91与晶片Wl (或W2)之间将水回收至液体回收装置6的内部。 Further, at this time, and liquid recovery unit 6, the main controller 20 as instructed, the valve is opened at a predetermined opening degree of the recovery tube 23 is connected to the other valve is fully closed by the recovery nozzles 23a, 23b from the front end of the lens between 91 and Wl of the wafer (or W2) of water recycled to the liquid recovery unit 6 inside. 此时,主控制装置20,对液体供应装置5、液体回收装置6发出指令,使从供应嘴21a〜21c朝-Y方向供应至前端透镜91与晶片Wl (或W2)之间的水量,与通过回收嘴23a、 23b回收的水量相等。 At this time, the main control unit 20, liquid supply unit 5 and liquid recovery unit 6 gives an instruction, the amount of water between 91 and Wl of the wafer (or W2) 21a~21c supply nozzle to supply -Y direction from the front end of the lens, and equal recovered by the water recovery nozzles 23a 23b. 因此,在前端透镜91与晶片Wl (或W2)之间,保持一定量的水Lq (参照图1)。 Thus, between the lens 91 and the distal Wl of the wafer (or W2 of), a quantity of water Lq is held (see FIG. 1). 在此情形,保持于前端透镜91与晶片Wl (或W2)之间的水Lq持续替换。 In this case, held in constantly replaced with water Lq between Wl of the wafer (or W2) tip lens 91. 又,沿图4中的虚线箭头A,所示的方向(+Y方向)使晶片Wl (或W2) 移动时,液体供应装置5的控制器,依照主控制装置20的指示,以既定开度打开连接于供应管22的阀,使其它阀为全闭,通过设置于供应管22的供应嘴22a〜22c朝+Y方向将水供应至前端透镜91与晶片Wl (或W2)之间。 And, along the dotted arrow A in FIG. 4, the direction (+ Y direction) as shown Wl of the wafer (or W2) is moved, the liquid supply control apparatus 5, the main controller 20 in accordance with an indication of the degree of opening at a predetermined open valve 22 is connected to the supply pipe of the other valve is fully closed, the supply is provided by a supply nozzle tube 22 toward the + Y direction 22a~22c supplying water to between 91 and Wl of the wafer (or W2) tip lens. 又,此时,液体回收装置6的控制器,依照主控制装置20的指示,以既定开度打开连接于回收管24的阀,使其它阀为全闭,通过回收嘴24a、 24b从前端透镜91与晶片Wl (或W2)之间至液体回收装置6的内部回收水。 Further, at this time, and liquid recovery unit 6, the main controller 20 as instructed, and opens at a predetermined opening degree of the valve is connected to the recovery tube 24, so that the other valve is fully closed by the recovery nozzles 24a, 24b from the front end of the lens between 91 and Wl of the wafer (or W2) to the interior of the liquid recovery unit 6 of recovered water. 此时,主控制装置20,对液体供应装置5、液体回收装置6发出指令,使从供应嘴22a〜22c朝+Y方向供应至前端透镜91与晶片Wl (或W2)之间的水量,与通过回收嘴24a、 24b回收的水量相等。 At this time, the main control unit 20, liquid supply unit 5 and liquid recovery unit 6 gives an instruction, the amount of water between 91 and Wl of the wafer (or W2) toward 22a~22c supplied from the supply nozzle tip lens to the + Y direction, and equal recovered by the water recovery nozzles 24a 24b. 因此,在前端透镜91与晶片Wl (或W2)之间,保持一定量的水Lq (参照图1)。 Thus, between the lens 91 and the distal Wl of the wafer (or W2 of), a quantity of water Lq is held (see FIG. 1). 在此情形,保持于前端透镜91与晶片Wl (或W2)之间的水Lq持续替换。 In this case, held in constantly replaced with water Lq between Wl of the wafer (or W2) tip lens 91. 如此,在本实施形态,因隔着曝光区域IA在Y轴方向一侧与另一侧, 分别设置彼此成組的供应嘴群组与回收嘴群组,故即使要将晶片朝+Y方向或-Y方向的任一方移动时,在晶片Wl (或W2)与前端透镜91之间使水稳定地持续填满。 Thus, in the present embodiment, because the exposure area IA via a side and the other side, are respectively provided supply nozzles and the recovery nozzles group group group of each other in the Y-axis direction, so even want wafer toward the + Y direction or when either one of the movement in the -Y direction, between Wl of the wafer (or W2) and tip lens 91 is constantly filled with the water stably. 即,即使是正扫描及负扫描的任一情形,也能在前端透镜91 与晶片之间稳定地保持水。 That is, even in a case where any negative scanning and positive scanning, the water can be stably held between tip lens 91 and wafer. 又,因水会流动于晶片Wl (或W2)上,故即使在晶片Wl (或W2)上附着异物(包含来自光刻胶的飞散粒子)的情形,能将该异物用水冲洗。 Further, because the water will flow in the case of the Wl of the wafer (or W2 of), so that adhesion of foreign matter on the wafer Wl of the even (or W2 of) (comprising scattering particles from the resist), and the foreign matter can be rinsed with water. 又,因供应由液体供应装置5已调整为既定温度的水,且此水是持续替换, 故即使在曝光时照明用光IL照射于晶片Wl (或W2)上,在晶片与流动于该晶片上的水之间进行热交换,能防止晶片表面的温度上升。 Further, because the liquid supply by the supply means 5 has been adjusted to a predetermined temperature of the water, and this water is constantly replaced, so that even when the exposure illumination light IL is irradiated on wafer Wl of the (or W2 of), the wafer in the flow of the wafer heat exchange between the water, the surface temperature of the wafer can be prevented from rising. 又,在本实施形态,因水沿与移动晶片的方向相同方向流动,故不会4吏已吸收异物或热的液体滞留于前端透镜正下方的曝光区域而能将其回收。 Further, in the present embodiment, because the movement of water along the same direction as the flow of the wafer, it is not the foreign matter 4 has absorbed officials or hot liquids retained in the exposure area directly below the tip lens which can be recovered. 又,若要朝图4中实线箭头B所示的方向(+X方向)移动晶片Wl (或W2)时,液体供应装置5的控制器,依照主控制装置20的指示,以既定开度打开连接于供应管27的阀,使其它阀为全闭,通过设置于供应管27的供应嘴27a朝+X方向将水供应至前端透镜91与晶片Wl (或W2)之间。 Further, to the mobile Wl of the wafer (or W2 of), the liquid supply direction toward the (+ X direction) by the solid line arrow B in FIG. 4 device controller 5, in accordance with the main control device 20 indicates to a predetermined opening degree opening a valve connected to the supply tube 27, so that the other valve is fully closed by providing the supply tube 27 of the supply nozzle 27a toward the + X direction between 91 and water is supplied to the Wl of the wafer (or W2) tip lens. 又, 此时,液体回收装置6的控制器,依照主控制装置20的指示,以既定开度打开连接于回收管29的阀,4吏其它阀为全闭,通过回收嘴29a、 29b将水从前端透镜91与晶片W1(或W2)之间回收至液体回收装置6的内部。 Further, at this time, and liquid recovery unit 6, the main controller 20 as instructed, and opens at a predetermined opening degree of the valve is connected to a recycling pipe 29, the valve 4 is fully closed other officials, by recovery nozzles 29a, 29b and the aqueous recovered from between tip lens 91 and wafer W1 (or W2) to the interior of the liquid recovery unit 6. 此时, 主控制装置20,对液体供应装置5、液体回收装置6发出指令,使从供应嘴27a供应至前端透镜91与晶片Wl(或W2)之间的水量,与通过回收嘴29a、 29b回收的水量相等。 At this time, the main control unit 20, liquid supply unit 5 and liquid recovery unit 6 instructs the supply nozzle 27a to supply water from between 91 and Wl of the wafer (or W2) tip lens, and through the recovery nozzles 29a, 29b equal amount of water recovered. 因此,在前端透镜91与晶片Wl (或W2)之间,保持一定量的水Lq (参照图1)。 Thus, between the lens 91 and the distal Wl of the wafer (or W2 of), a quantity of water Lq is held (see FIG. 1). 在此情形,保持于前端透镜91与晶片Wl (或W2)之间的水Lq持续替换。 In this case, held in constantly replaced with water Lq between Wl of the wafer (or W2) tip lens 91. 又,若要朝图4中虚线箭头B,所示的方向(-X方向)移动晶片Wl (或W2)时,液体供应装置5的控制器,依照主控制装置20的指示,以既定开度打开连接于供应管28的阀,使其它阀为全闭,通过设置于供应管28的供应嘴28a朝-X方向将7JC供应至前端透镜91与晶片Wl (或W2)之间。 Further, a broken line arrow B toward to FIG. 4, the direction (-X direction) as shown Wl of the wafer is moved (or W2 of), the liquid supply control apparatus 5, in accordance with the main control device 20 indicates to a predetermined opening degree opening the valve connected to supply pipe 28, so that the other valve is fully closed by providing the supply tube 28 supply nozzle 28a in the -X direction between 91 and supplied to 7JC Wl of the wafer (or W2) tip lens. 又, 此时,液体回收装置6的控制器,依照主控制装置20的指示,以既定开度打开连接于回收管30的阀,4吏其它阀为全闭,通过回收嘴30a、 30b将水从前端透镜91与晶片W1(或W2)之间回收至液体回收装置6的内部。 Further, at this time, and liquid recovery unit 6, the main controller 20 in accordance with the indication, the valve is opened at a predetermined opening degree of the recovery tube 30 is connected, other officials valve 4 is fully closed by the recovery nozzles 30a, 30b and the aqueous recovered from between tip lens 91 and wafer W1 (or W2) to the interior of the liquid recovery unit 6. 此时, 主控制装置20,对液体供应装置5、液体回收装置6发出指令,使从供应嘴28a供应至前端透镜91与晶片Wl(或W2)之间的水量,与通过回收嘴30a、 309b回收的水量相等。 At this time, the main control unit 20, liquid supply unit 5 and liquid recovery unit 6 instructs the supply of water from supply nozzles 28a to between 91 and Wl of the wafer (or W2) tip lens, and through the recovery nozzles 30a, 309b equal amount of water recovered. 因此,在前端透镜91与晶片Wl (或W2)之间,保持一定量的水Lq (参照图1)。 Thus, between the lens 91 and the distal Wl of the wafer (or W2 of), a quantity of water Lq is held (see FIG. 1). 在此情形,保持于前端透镜91与晶片Wl (或W2)之间的水Lq持续替换。 In this case, held in constantly replaced with water Lq between Wl of the wafer (or W2) tip lens 91.藉此,与使晶片Wl (或W2)朝Y轴方向移动的情形同样,即使要将晶片朝+X方向或-X方向的任一方移动时,将水稳定地填满于晶片与前端透镜91之间。因此,在所谓照射间步进时,即使其步进方向是任何方向,也能在晶片与前端透镜91之间稳定地持续保持水。又,以上,虽对在晶片与前端透镜91之间将水保持的情形说明,但如前述,因晶片表面与晶片保持具H1、 H2的表面成为大致同一面,故即使晶片保持具H1 (或H2)位于对应投影单元P正下方的曝光区域IA的位置的情形,与上述同样,水则保持于前端透镜91与晶片保持具H1 (或H2), 也即与前述的辅助板之间。又,步进时,若在晶片与前端透镜91之间能保持水的情形,也可停止水的供应与回收。又,除了从X轴方向或Y轴方向进行水的供应及回收的嘴外,例如也可设置用以从斜方向进行水的供应及回收的嘴。又,也可与晶片的移动方向无关,从供应嘴21a〜21c、 22a〜22c、 27a、 28a持续供应液体Lq,从回收嘴23a、 23b、 24a、 24b、 29a、 29b、 30a、 30b 持续回收液体Lq。又,液体供排系统不限于上述图4的形态,只要能在投影光学系统PL 的像面侧形成液浸区域,能适用各种形态。本实施形态100,进一步在用以保持投影单元PU的未图标的保持构件, 设置斜射入方式的多点焦点位置检测系统,是由照射系统90a(在图l未图标,参照图5)及受光系统90b (在图1未图标,参照图5)构成,与例如曰本特开平6-283403号公报及对应于此的美国专利笫5,448,332等所揭示的同样。照射系统90a,具有以图5的主控制装置20控制开关的光源,朝投影光学系统PL的结像面射出用以形成多数个针孔或狹缝的像的光束。此所射出的光束,通过设置于投影单元PU的镜筒的未图标的棱镜(照射系统90a内的光学系统的一部分)对光轴AX从斜方向照射于晶片表面。另一方面,在晶片表面被反射的这些光束的反射光束,以设置于投影单元PU的镜筒的未图标的另外的棱镜(受光系统90b内的光学系统的一部分)反射,由受光系统90b内的受光元件受光。此焦点位置检测系统(90a、 90b)的受光系统90b的输出的焦点偏移信号(散焦信号),是供应至主控制装置20。主控制装置20,在后述的扫描曝光时等,算出来自受光系统90b的焦点偏移信号(散焦信号),例如根据S曲线信号算出晶片表面的Z位置及6x、 6y旋转,使所算出的晶片表面的Z位置及6x、 6y旋转对所述的目标值的差变成零,即要使焦点偏移为零, 由通过晶片载台驱动部124控制晶片载台WST1 、WST2的Z轴方向的移动, 及二维方向的倾斜(即,6x、 6y方向的旋转),在照明用光IL的照射区域(与前述的照射区域共同的区域)内执行使投影光学系统PL的结像面与晶片的表面实质上一致的自动对焦(auto focus)及自动调平(auto levelling)。又,在本案所指定的指定国(或所选择的选择国)的国内法令所允许的范围, 援用上述日本特开平6-283403号公净议对应的美国专利的揭示,作为本说明书的记载的一部分。又,焦点位置检测系统,也可通过液体检测晶片表面的位置资料,也可不通过液体检测。又,焦点位置检测系统,不限于在投影光学系统PL的像面侧检测晶片表面的位置资料,也可从投影光学系统PL离开处检测晶片表面的位置资料。在图5,表示本实施形态的曝光装置IOO的控制系统的主要构成。此控制系统,以将装置全体综合控制的微电脑(或工作站)所构成的主控制装置20为中心来构成。其次,说明本实施形态的曝光装置IOO曝光时的各部的动作。在此,如图2所示,说明在晶片载台WST1侧进行曝光的情形。此曝光动作的开始时,在主控制装置20, 4艮据事前所进行的例如增强型总对准(EGA, Enhanced Global Alignment)等的晶片对准的结果等,边监视干涉计18、 46的测量值,边控制X轴线性发动机84、 85及Y轴线性发动机81,而将晶片载台WST1移动至用以晶片Wl的第一照射区域的曝光用扫描开始位置(加速开始位置)。在此曝光次序,是在第一曝光坐标系统上进行晶片载台WST1的位置管理。其次,在主控制装置20,开始相对于标线片R(标线片载台RST)与晶片Wl (晶片载台WST1)的Y轴方向的相对扫描。此相对扫描时,主控制装置20,边监视前述的干涉计18、 46及标线片干涉计116的测量值,边控制标线片载台驱动部11并且Y轴线性发动机81 (及X轴线性发动机84、 85)。接着,当两载台RST、 WST1加速至各目标扫描速度时,在主控制装置20,对未图标的光源(ArF准分子激光装置)发出指令,开始脉冲发光。然后,当两载台RST、 WST1达到等速同步状态时,由来自照明系统10的照明用光IL (紫外脉冲光)使标线片R的图案区域开始照明,开始扫描曝光。虽在此扫描曝光开始之前,如上述,光源的脉冲发光已开始,但由主控制装置20,照明系统10内的可动标线片遮帘(未图标)的既定叶片同步于标线片载台RST而移动,藉此防止在扫描曝光的开始前对晶片Wl进行不必要的曝光。然后,以照明用光IL依次照明标线片R的图案区域,由完成对图案区域全面的照明,结束晶片Wl上的第一照射区域的扫描曝光。藉此,标线片R的图案通过投影光学系统PL缩小转印于晶片Wl上的第一照射区域。在此情形,扫描曝光结束后,也由主控制装置20,使照明系统10内的可动标线片遮帘(未图标)同步于标线片载台RST而移动,藉此防止晶片Wl的不必要的曝光。如上述,结束第一照射区域的扫描曝光后,由主控制装置20,通过X 轴线性发动机84、 85及Y轴线性发动机81使晶片载台WST1沿X、 Y方向步进移动,移动至用以第二照射区域的曝光的加速开始位置(扫描开始位置)。此照射间步进时,主控制装置20,依干涉计18、 46的测量值将晶片载台WST1的X、 Y、 6z方向的位置位移实时(realtime)检测。并且,根据此测量结果,主控制装置20,控制晶片载台WST1的位置,4吏晶片载台WST1的XY位置位移成为既定状态。又,主控制装置20,.才艮据晶片载台WST1的6z方向的资料,控制标线片载台RST (标线片微动载台)及晶片载台WST1的至少一旋转,使其晶片侧的旋转位移补偿。接着,在照射间步进结束后,由主控制装置20,与上述同样,控制各部的动作,对晶片Wl上的第二照射区域进行与上述同样的扫描曝光。如上述,反复进行晶片Wl上的照射区域的扫描曝光与供下次照射曝光的照射间步进动作,使标线片R的图案依序转印于晶片Wl上的曝光对象的照射区域全部。又,上述的对晶片Wl的步进扫描方式的曝光动作中,按照晶片W1的移动方向的变化,由主控制装置20,如前述,进行液体供排系统32的液体供应装置5及液体回收装置6的各阀的开关控制则是理所当然。因此,上述的对晶片Wl的步进扫描方式的曝光动作中,在前端透镜91与晶片Wl之间维持持续将一定量的水稳定地保持的状态。其次,对使用两个晶片载台WST1、 WST2的并行处理动作,参照图2 及图6〜图9说明。又,以下的动作中,由主控制装置20,按照位于投影单元PU正下方的第一区域的晶片载台的移动方向,如前述进行液体供排系统32的液体供应装置5及液体回收装置6的各阀的开关控制,在投影光学系统PL的前端透镜91正下方持续填满水。但是,以下,为了要使说明容易了解, 将关于液体供应装置5及液体回收装置6的控制的说明省略。在图2表示:对晶片载台WST1上的晶片Wl如前述以步进扫描方式进行曝光,与此并行,在晶片载台WST2侧,在对准系统ALG2的下方的第三区域进行对晶片W2的晶片对准的状态。如上述,对晶片Wl以步进扫描方式进行曝光期间,在晶片载台WST2 侧,则进^f于如下所述的动作。即,在上述的晶片对准前,在左侧装载位置,未图标的晶片搬送机构与晶片载台WST2之间进行晶片交换。在此,所谓左侧装载位置,是指设定为基准标记板FM2位于对准系统ALG2的正下方的位置而言。在此情形,在左侧装载位置,由对准系统ALG2检测基准标记板FM2上的第二基准标记以前,由主控制装置20执4亍Y轴干涉计44的重置(reset)。上述第二基准标记的检测时,主控制装置20,使用对准系统ALG2取进第二基准标记的影像,对其影像信号施加既定的处理,由解析其处理后的信号来检测以对准系统ALG2的指针中心为基准的第二基准标记的位置。又,主控制装置20,根据其第二基准标记的位置的检测结果与其检测时的干涉计16、 44的测量结果,算出第二对准坐标系统上的第二基准标记的位置坐标。其次,主控制装置20,由边在前述第二对准坐标系统上管理晶片载台WST2的XY面内的位置,边使用对准系统ALG2来检测附设于晶片W2上的特定的多个照射区域(样本照射区域)的对准标记(样本标记)的位置资料(对对准系统ALG2的检测中心的位置资料),来求出第二对准坐标系统上的样本标记的位置资料。接着,主控制装置20,根据其检测结果与特定的照射区域的设计上的位置坐标,执行例如日本特开昭61-22249号公报及对应于此的美国专利第4,780,617号等所揭示的统计运算,来算出晶片W2上的多个照射区域的第二对准坐标系统上的位置坐标。即,如上述,进行EGA (增强型总对准)。并且,主控制装置20,由从晶片W2上的多个照射区域的第二对准坐标系统上的位置坐标将前述笫二基准标记的位置坐标减算,使多个照射区域的位置坐标转换成以第二基准标记的位置为原点的位置坐标。又,在本案所指定的指定国(或所选择的选择国)的国内法令所允许的范围, 援用上述公报及对应美国专利的揭示,作为本说明书的记载的一部分。

上述在两个晶片载台WST1、 WST2上并行而进行的曝光次序与晶片交换/对准次序,通常,是晶片交换/对准次序最先结束。 In the above-described two WSTl wafer stage, and the parallel WST2 exchange / alignment of the wafer and the order of exposure order, typically, a wafer exchange / alignment of the first end of the order. 因此,已结束对准的晶片载台WST2,则在既定的待机位置呈等待状态。 Thus, the alignment is completed the wafer stage and WST2, the waiting state was at a predetermined standby position.

并且,在晶片载台WST1侧,在对晶片Wl的曝光结束的时点,主控制装置20,将晶片载台WSTi、 WST2朝图6所示的既定位置分别开始移动。 Further, in wafer stage WST1 side, the exposure of the wafer Wl end point, main controller 20, the wafer stage WSTI, WST2 predetermined position shown in FIG. 6 begins to move toward, respectively.

并且,将晶片载台WST1、 WST2移动至图6所示的位置后,主控制装置20,则开始^f吏晶片载台WST1与晶片栽台WST2同时朝+X方向驱动的动作。 Then, the wafer stages WST1, WST2 is moved to the position shown in FIG. 6, the main controller 20, starts ^ f Official wafer stage WST1 and wafer stage WST2 planted simultaneously driven toward the + X direction operation. 又,在图6的状态,晶片载台WST1与晶片载台WST2是通过设置于晶片载台WST1的弹性密封构件93接触。 Further, in the state of FIG. 6, wafer stage WST1 and wafer stage WST2 are in contact with the carrier stage WST1 elastic seal member 93 disposed on the wafer through.

如上述,由主控制装置20,使晶片载台WST1、 WST2同时移动,在图6的状态,保持于投影单元PU的前端透镜91与晶片Wl之间的水,则伴随晶片载台WST1、 WST2朝+X側移动,在晶片W1 —晶片载台WST1 (更具体而言是晶片保持具Hl)—晶片栽台WST2 (更具体而言是晶片保持具H2) 上^^序移动。 As described above, the main controller 20, wafer stage WST1, WST2 move simultaneously in the state of FIG. 6, the water held between tip lens 91 and wafer Wl projection unit PU, a wafer stage is accompanied WST1, WST2 moved toward the + X side, the wafer W1 - WSTl wafer stage (more specifically, a wafer holder Hl) - planted wafer stage and WST2 (more specifically, a wafer holder H2) ^^ movement sequence. 又,上述移动期间,晶片载台WST1、 WST2则与图6的状态同样通过弹性密封构件93保持彼此接触的位置关系。 During the movement above, wafer stage WST1, WST2 93 holding the same positional relationship with each other in contact with the state of FIG. 6 by the elastic sealing member. 在图7,表示:在上述移动的中途,水同时存在于晶片载台WST1、 WST2 (晶片保持具H1、 H2) 时的状态,即从晶片载台WST1上待将水交给晶片载台WST2上之前的状态。 In FIG. 7, showing: in the middle of the movement, the water is present in the wafer stage WSTl, the state and WST2 (wafer holder H1, H2) at the same time, i.e., until the wafer carrier from the water table to the wafer stage WST1 WST2 the state before.

从图7的状态,当进一步4吏晶片载台WST1 、 WST2朝+X方向同时驱动既定距离,则如图8所示,形成在晶片载台WST2上的包舍基准标记板FM2 的区域与前端透镜91之间保持水的状态。 From the state of FIG. 7, when distal end region further wafer stage 4 Official WSTl, WST2 the + X direction driven simultaneously by a predetermined distance, as illustrated in FIG. 8, are formed on the wafer stage WST2 packet round of fiducial mark plate FM2 holding the state of the water between lens 91. 先行于此,主控制装置20,在使来自Y轴干涉计46的干涉计光束能照射于移动镜117Y的任一时点,执行Y 轴干涉计46的重置。 This first, main controller 20, when the Y-axis from the interferometer interfering beams can be irradiated to a 46 meter movable mirror 117Y any point performs Y-axis interferometer 46 to reset the count.

接着,主控制装置20,朝图9所示的右侧装载位置开始晶片载台WST1 的驱动。 Next, the main controller 20, the right loading position shown toward the starting wafer stage WST1 in FIG. 9 of the drive. 此右侧装载位置,设定为基准标记板FM1位在对准系统ALG1的正下方的位置。 This right loading position is set to the reference mark plate FM1 bit position directly below the alignment system ALG1.

与朝上述右侧装栽位置的晶片载台WST1的移动开始并行,主控制装置20,由一对标线片对准系统RAa、 RAb(参照图1)使用照明用光IL进行基准标记板FM2上的一对笫一基准标记与对应于其的标线片R上的标线片对准标记的晶片上投影像的相对位置检测。 The mobile stage WST1 toward the right side of the wafer loading position the start planted in parallel, main controller 20, the reference mark plate FM2 for the alignment system RAa, RAb (refer to FIG. 1) using the illumination light IL by a reticle detecting the relative position of one pair of Zi and a reference mark on the reticle R on the reticle corresponding thereto on the wafer alignment mark projected image. 此时,基准标记板FM2上的一对第一基准标记与标线片对准标记的像的检测,是通过投影光学系统PL及水来进行。 At this time, the detection image of the pair of first reference mark and reticle alignment marks on the reference mark plate FM2, is performed by the projection optical system PL and water.

并且,主控制装置20,根据此所检测的相对位置资料,与对预先所求的第二基准标记的晶片W2上的各照射区域的位置资料,及既知的第一基准标记与第二基准标记的位置关系,算出标线片R的图案的投影位置(投影光学系统PL的投影中心)与晶片W2上的各照射区域的相对位置关系。 Further, the main controller 20, the relative position information detected herein, the position information of each shot area on wafer W2 predetermined second reference mark of the request, and knows is the first reference mark and the second fiducial mark positional relationship, (the projection center of the projection optical system PL) is calculated projection position of a pattern of reticle R relative positional relationship of each shot area on the wafer W2. 并且, 才艮据其算出结杲,主控制装置20,与前述的晶片Wl的情形同样,在第二曝光坐标系统上边管理晶片载台WST2的位置,边以步进扫描方式将标线片R 的图案转印于晶片W2上的各照射区域。 Further, it is calculated according to its junction Gen Gao, main controller 20, and the case where the same wafer Wl, the second exposure coordinate system at the upper position of wafer stage WST2, while scanning in a stepwise manner reticle R each shot area on wafer W2 in the pattern transfer.

与上述晶片载台WST2侧的动作并4亍,晶片载台WST1側,在右侧装载位置,与未图标的晶片搬送系统之间进行晶片交换,与晶片交换同时或在其后,由主控制装置20使用对准系统ALG1进行基准标记板FM1上的第二基准标记的检测。 The above-described wafer stage WST2 side operation right foot and 4, the wafer stage WST1 side, at the right loading position, not shown in the wafer transfer between the wafer exchange system, simultaneously with or after the wafer exchange, main control 20 using alignment systems ALG1 means detects the second fiducial marks on fiducial mark plate FM1. 主控制装置20,先在此第二基准标记的检测以前执行Y轴干涉计48的重置。 Main controller 20, to perform Y-axis interferometer 48 to reset the count of this second fiducial mark detected before. 其后,主控制装置20,边在第一对准时坐标系统上管理晶片载台WST1,边对晶片W2进行使用对准系统ALG1的EGA。 Thereafter, the main controller 20, the edge of wafer stage WST1 on the first alignment coordinate system, the edge of the EGA wafer W2 using alignment system ALG1 for the.

以后,由主控制装置20,反复进行与上述晶片载台WST1、 WST2的并行动作。 Later, by the main control unit 20 repeats the above-described wafer stage WST1, WST2 parallel operation.

使用晶片载台WST1与晶片载台WST2的并行处理时,在对一晶片载台上的晶片的曝光结束,至对另一晶片载台上的晶片的曝光要开始期间,虽会进行从一晶片载台在投影单元PU正下方的状态(即,在一晶片载台上水附着的状态),迁移至另一晶片载台在投影单元PU正下方的状态(即,在另一晶片载台上水附着的状态),但此时,如前述,维持晶片载台WST1、 WST2在X轴方向通过弹性密封构件93呈接触状态(图10的状态)。 When using wafer stage WST1 and wafer stage WST2 parallel processing, the exposure of the wafer on a stage of a wafer is completed, during exposure of the wafer to the carrier to start another wafer stage, although from a wafer will state stage directly below projection unit PU (i.e., a wafer stage of an attached state of the water in), migrate to another state of the wafer stage directly below projection unit PU (i.e., the other wafer stage adhered state of the water), but this time, as described above, to maintain the wafer stage WST1, WST2 in the X-axis direction of the elastic sealing member 93 as a contact state (state of FIG. 10) through. 因此, 如图7所示,即使在晶片载台WST1、 WST2彼此间使7K跨越(液浸区域) 的状态,由弹性密封构件93能确实防止水(液体)通过晶片载台WST1、 WST2 ;f皮此的间隙向载台下方泄漏。 Thus, as shown in FIG. 7, even in a state of the wafer stage WSTl, 7K across each other so WST2 (liquid immersion area) by the elastic seal member 93 can be reliably prevented from water (liquid) by the wafer stage WST1, WST2; f this gap skin from leaking downward stage.

又,在晶片载台WST1与晶片载台WST2的移动途中,虽会存在来自干涉计46、 48任一千涉计光束不照射于晶片载台WST1的移动镜17Y的状态(移动期间,移动区间),又,存在来自干涉计46、 44 4壬一干涉计光束也不照射于晶片载台WST2的移动镜117Y的状态(移动期间,移动区间), 但在本实施形态,此情形的两晶片载台WST1、 WST2的位置,是由未图标的线性编码机(linearencorder)来管理。 Further, in the middle of the movement of the wafer stage WST1 and wafer stage WST2, although there will be (during movement, moving from the state interferometer section 46, one thousand irradiated without any interferometer beam 48 to the wafer stage WST1 is movable mirror 17Y ), and, the presence of an interferometer 46, a state nonyl 444 (during movement, moving interval) does not count beam is irradiated on the wafer stage WST2 movable mirror 117Y interference, but from two wafer in the present embodiment, this situation is stage WST1, WST2 location that is managed by a linear encoder (not shown) of the machine (linearencorder). 又,使用线性编码机来管理晶片载台的位置时,在来自任一Y轴干涉计的干涉计光束会照射于移动镜17Y或117Y的时点,由主控制装置20执行Y轴干涉计的重置。 Also, when using linear encoders to manage the position of the wafer stage in the Y-axis from any interferometer beams of the interferometer is irradiated to the movable mirror will point 17Y or 117Y, the Y-axis interferometer 20 performed by the control apparatus main meter reset.

如从以上说明可知,在本实施形态,由晶片载台驱动部124构成栽台驱动系统的至少一部分。 As apparent from the above description, in the present embodiment, a wafer stage driving portion 124 forms at least a portion of the plant stage driving system. 又,由此载台驱动系统,与晶片载台WST1、 WST2 构成载台装置的至少一部分。 And, whereby the stage drive system, wafer stage WST1, WST2 constitutes at least a portion of the stage apparatus.

如以上详细说明,依本实施形态的曝光装置IOO及该曝光装置所具备的载台装置,并且在该曝光装置IOO所执行的晶片载台WST1、 WST2的驱动方法,从一晶片载台WST1(或WST2)位于第一区域(包含有液体(水)供应的投影单元PU (投影光学系统PL)正下方的位置)的第一状态,迁移至另一晶片载台WST2 (或WST1)位于笫一区域的第二状态时,由载台驱动系统(124等),晶片载台WST1、 WST2维持于X轴方向通过弹性密封构件93呈接触状态,晶片载台WST1、 WST2朝X轴方向同时驱动。 As described above in detail, stage apparatus under this embodiment of the exposure apparatus and the exposure apparatus IOO included, and wafer stage WST1 in the exposure apparatus IOO performed, the driving method and WST2, wafer stage WST1 from one ( or and WST2) projection unit located in the first region (containing the liquid (water) supplied PU (projection optical system PL) of the position immediately below) in a first state, migrate to the other wafer stage and WST2 (or WSTl) located Zi region of the second state, the stage drive system (124, etc.), the wafer stage WST1, WST2 in the X-axis direction is maintained as a contact state by an elastic sealing member 93, wafer stage WST1, WST2 in the X-axis direction are simultaneously driven.

因此,在投影光学系统PL (投影单元PU)与位于其正下方的特定的晶片载台(此晶片载台,伴随移动从一晶片载台切换为另一晶片载台)之间供应着水的状态,水不会从两晶片载台的间隙泄漏,能使从一晶片载台WST1(或WST2)位于第一区域的第一状态,迁移至另一晶片载台WST2 (或WST1)位于第一区域的第二状态。 Thus, the water supply of the projection optical system PL (projection unit PU) located directly below the specific wafer stage (wafer stage, along with the movement of the wafer stage is switched from one to another wafer stage) between state, the water does not leak from the gap between both of the wafer stage, a wafer stage can WSTl from (or and WST2) in the first state a first region, migrate to the other wafer stage and WST2 (or WSTl) located between the first a second status area. 即,在一晶片载台侧通过投影光学系统PL与水(液体)进行晶片的曝光动作后,至在另一晶片载台側通过投影光学系统PL与水(液体)开始晶片的曝光动作前为止期间,能乂人一晶片载台与投影光学系统PL之间使7JC保持的状态,迁移至另一晶片载台与投影光学系统PL之间使7jc保持的状态,而不需要经过水的全回收、再度供应等步骤。 That is, after a wafer stage side of the exposure operation of the wafer through the projection optical system PL and the water (liquid), prior to the exposure operation on the other wafer stage side via the projection optical system PL and the water (liquid) until the beginning of the wafer period, so that a person can qe between the wafer stage and the projection optical system PL 7JC held state, migrate to the other between the wafer stage and the projection optical system PL 7jc a state held, without going through the process of fully recovering the water , re-supply and other steps.

因此,能将从一晶片载台侧的曝光动作结束至另一晶片载台侧的曝光动作开始为止的时间缩短(即,维持为与非液浸曝光的通常的曝光装置(非液浸曝光装置)相同程度),能获得产能的提高。 Therefore, from the end of the exposure operation of a wafer stage side until the start time is shortened to the other side of the wafer stage of an exposure operation (i.e., to maintain the non-immersion exposure ordinary exposure apparatus (a non-immersion exposure apparatus ) the same degree), improve access to production capacity. 又,因在投影光学系统PL 的像面侧持续存在水,故能有效地防止在投影光学系统PL的^f象面侧的光学构件(例如前端透镜91及前述的多点焦点位置检测系统的棱镜等)产生水紋(水痕,water mark),能长期良好地维持投影光学系统PL的结像性能及多点焦点位置检测系统的检测精度。 Further, due to the continued presence of water on the image plane of the projection optical system PL side, it can effectively prevent the optical member ^ f image plane side of the projection optical system PL (e.g. tip lens 91 and the multipoint focal position detection system prism) produces water stains (water marks, water mark), a good long-term maintaining the imaging performance of the detection accuracy of the projection optical system PL and the multi-point focal position detection system.

又,由在前述两个晶片载台WST1、 WST2的并行处理动作,比起已知的具备单晶片载台的曝光装置(使用一个晶片载台,将晶片交换、晶片对准 Further, by the two at the wafer stage WST1, WST2 parallel processing operation, compared to the exposure apparatus includes a single wafer stage known (using one wafer stage, the wafer exchange, wafer alignment

及曝光动作,依序进行),能荻得产能的提高。 And the exposure operation performed sequentially), Di can be obtained to improve production capacity.

又,因由液浸曝光,进行高解像度且比空气中大焦点深度的曝光,故能将标线片R的图案精度良好地转印于晶片上,例如当作元件规格(device rale)能实现70〜100nm程度的微细图案的转印。 And, cause the liquid immersion exposure, and exposure with high resolution large depth of focus than air, so the precision of the pattern of reticle R can be transferred with good on the wafer, such as a standard element (device rale) to achieve 70 transfer of a fine pattern that ~100nm.

又,在本实施形态,由晶片载台WST1与晶片载台WST2是通过弹性密封构件93接触,除了能防止自两晶片载台的间隙的漏水外,也能降低晶片载台WST1与晶片载台WST2接触时的冲击。 Further, in the present embodiment, the wafer stage WST1 and wafer stage WST2 are in contact via elastic seal member 93, in addition to preventing from the outer leakage gap two wafer stage, but also to reduce the wafer stage WST1 and wafer stage WST2 impact when contacted.

再者,在本实施形态,因在晶片载台WST1的-X侧面及晶片载台WST2 的+X侧面未设置干涉计用的移动镜,故即使两晶片载台是在X轴方向呈近接状态,因两晶片载台上的移动镜的反射面彼此不会近接而相面对,故两晶片载台沿X轴方向同时驱动的期间,不仅能由干涉计系统118监视两晶片载台的位置,也能防止在移动镜的反射面附着水。 Further, in the present embodiment, because wafer stage WST1 and the -X side surface of wafer stage WST2 in the + X side surface of the movable mirror is not provided with the interferometer, so that even if the wafer stage is two are close together in the X-axis direction state , because the wafer on a stage of the two reflecting surfaces of the mirror does not move relative to each other near the face, so that during stage two wafer X-axis direction simultaneously driven, not only the position of the interferometer system 118 by a wafer stage of the two monitors , water can be prevented from adhering to the reflection surface of movable mirror.

第二实施形态: Second Embodiment:

其次,依图11〜图15B说明本发明的第二实施形态。 Next, according to FIG. 11~ 15B illustrates a second embodiment of the present invention. 在此,对与前述第一实施形态同一或同等的部分,使用同一的符号,并且将其说明简化或省略。 Here, the first embodiment of the aspect of the same or equivalent portions, using the same symbols, and description thereof will be simplified or omitted. 在此第二实施形态的曝光装置,晶片载台装置的构成等,及使用两个晶片载台的并行处理动作则与第一实施形态不同。 In this second embodiment of the exposure apparatus, the wafer stage and the like constituting devices, and two parallel processing operation using wafer stage is different from the first embodiment. 又,标记检测系统仅设置一个, 也与前述第一实施形态不同。 Further, only one mark detection system is arranged is also different from the aforementioned first embodiment. 其它部分的构成等,则与前述第一实施形态相同。 And the like constituting the other portions, it is the same as the first embodiment. 因此,以下,仅以相异处为中心来说明,以免重复说明。 Therefore, the following only to illustrate the different at the center, so as not to be repeated.

图11,是表示本第二实施形态的曝光装置的控制系统的构成。 FIG 11 is a diagram showing a control system of exposure apparatus constituting a second embodiment of the present. 若将此图11与图5作比较,则得知在本笫二实施形态,替代前述第一实施形态的晶片载台驱动部124,设置晶片载台驱动部124A,这一点与前述的第一实施形态不同。 If this is compared with FIG. 11 FIG. 5, that is two in the present embodiment, Zi, alternatively the wafer stage driving portion 124 of the first embodiment, wafer stage drive section disposed 124A, and that the first different embodiments.

在本第二实施形态,替代前述的晶片载台装置50,设置图12所示的晶片载台装置50'。 In the second embodiment, instead of the wafer stage apparatus 50, the wafer is provided as shown in FIG. 12 stage apparatus 50 '. 此晶片载台装置50,,如图12所示,具备:基盘12;晶片载台WST1',是配置于该基盘12上面的上方(在图12的纸面前侧)的第一载台,及晶片载台WST2',是第二载台;六个干涉计151Xi、 151X2、 151X3、 151X4、 151Y!、 151Y2,是用来测量这些晶片载台WST1'、 WST2,的位置的位置测量系统;第一驱动部171、第二驱动部172,用以将晶片载台WST1'、 WST2,个别地驱动,俯视(从上方观察)呈大致H字形;第一连接机构195 及第二连接机构196 (在图12未图标,参照图11)。 The wafer stage apparatus 50 ,, 12, comprising: a base plate 12; wafer stage WST1 ', is disposed above the upper surface of the base plate 12 (the front side of the paper of FIG. 12) in a first stage and wafer stage WST2 ', a second stage; six interferometer 151Xi, 151X2, 151X3, 151X4, 151Y !, 151Y2, is used to measure the wafer stage WST1' position measuring system, and WST2, the position of the ; a first driving unit 171, second driving unit 172 to the wafer stage WST1 ', WST2, individually driven, substantially H-shaped plan view (viewed from above); a first connecting mechanism 195 and the second connecting means 196 (not shown in FIG. 12, see FIG. 11).

在此,由上述六个干涉计151Xp 151X2、 151X3、 151X4、 151Y!、 151Y2, 构成图11的干涉计系统118A;包含第一驱动部171、笫二驱动部172、第一连接机构195及第二连接机构196,来构成图11的晶片载台驱动部124A。 Here, by the six interferometers 151Xp 151X2, 151X3, 151X4, 151Y !, 151Y2, constituting the interferometer system 118A of FIG. 11; 171 comprises a first driving portion, Zi second drive unit 172, a first connection mechanism 195 second second connecting means 196 to constitute the wafer stage driving unit 124A in FIG. 11.

前述第一驱动部171具备:X轴线性发动机136X,是用以使晶片载台WST1,(或WST2,)朝X轴方向驱动的线性致动器(Hneax actuator);及一对Y轴线性发动机136Y!、 136Y2,用以使晶片载台WST1,(或WST2,)与X轴线性发动机B6X—体地朝扫描方向的Y轴方向驱动。 The first driving unit 171 includes: X-axis linear motor 136X, is used to make the wafer stage WST1, (or WST2,) toward the X-axis direction drive linear actuator (Hneax actuator); and a pair of Y-axis linear motor 136Y !, 136Y2, for causing the wafer stage WST1, (or WST2,) driving the Y-axis direction of the X axis toward the engine body B6X- scanning direction.

前述X轴线性发动机136X具备:X轴线性导件181 ,是将X轴方向当作长边方向的固定件;及X可动件179,沿该X轴线性导件181且朝X轴方向移动。 The X-axis linear motor 136X includes: X-axis linear guide 181, the X-axis direction as a longitudinal direction of the fixing member; and X mover 179, and 181 move toward the X-axis direction along the X-axis linear guide .

X轴线性导件181,由朝X轴方向延伸的框体,及具有在其内部以既定间隔沿X轴方向配设的多个电枢线圈的电;f区单元构成。 X-axis linear guide 181, the frame extending in the X-axis direction, and having a plurality of electrical armature coils inside thereof at a predetermined distance along the X-axis direction is disposed; zone F units. 在此X轴线性导件181的长边方向(X轴方向)的一端部,固定一Y轴线性发动机136Yi的可动件(Y可动件)184,在另一端部固定另一Y轴线性发动机136Y2的可动件(Y可动件)185。 184, the other fixed portion of the other end of the Y-axis in the longitudinal direction of this X-axis linear guide 181 (X-axis direction) end portion, a Y-axis linear motor fixed to a movable member 136Yi (Y movable member) engine 136Y2 movable member (Y movable member) 185.

前述X可动件179,例如,具有筒状(形成将X轴线性导件181从周围包围)的形状,在其内部设置YZ截面逆U字形的可动件轭。 The X movable element 179, e.g., having a cylindrical shape (forming the X-axis linear guide 181 surrounds the periphery) the shape of an inverse U-shape is provided in the YZ cross-section thereof inside the movable yoke member. 在此可动件轭, 沿其长边方向交替配置多个N极永久磁铁与多个S极永久磁铁。 The movable yoke member, which are alternately arranged along the longitudinal direction of the plurality of N-pole permanent magnet and a plurality of S poles of permanent magnets. 因此,在X 可动件179的内部空间,沿X轴方向形成交流-兹场。 Thus, the movable member in the interior space of X 179, X-axis direction is formed in the exchange - hereby field.

在此情形,由X可动件179,与X轴线性导件181之间的电磁相互作用, 使其产生使X可动件179朝X轴方向驱动的驱动力(洛伦兹(Lorentz)力)。 In this case, the movable member 179 by an X, and the electromagnetic interaction between X-axis linear guide 181, to produce an X movable element 179 driven by the driving force of the X-axis direction (Lorentz (LORENTZ) force ). 即,X轴线性发动机136X,是动磁型电动力驱动方式的线性发动机。 I.e., X-axis linear motor 136X, a movable magnet type linear motor driving method of the electric power.

在X可动件179的-Y侧面,设置第一连接机构195 (在图12未图标, 参照图11),用以将晶片载台WST1,(或WST2,)连接。 In the -Y side surface of X mover 179, a first connecting mechanism 195 (not shown in FIG. 12, see FIG. 11) for the wafer stage WSTl, (or and WST2,) is connected. 此第一连接积4勾195,例如能使用利用电磁的磁吸引力,或将晶片载台WST1,(或WST2,) 才/*式地卡合的机构等。 This first hook 195 connected to the product 4, for example, can be used only / * formula snapped engagement mechanism or the like by the magnetic attraction of the electromagnet, or the wafer stage WSTl, (or WST2,). 主控制装置20,控制此第一连接机构195,使晶片载台WST1,(或WST2,)连接于X可动件179,或使其解除其连接。 Main controller 20, the control means 195 of this first connection, the wafer stage WSTl, (or and WST2,) X is connected to the movable member 179, so that it is released or connected. 又, 在连接状态,晶片载台WST1,(或WST2,)由X可动件179成为单边支撑的状态。 Further, in the connected state, wafer stage WSTl, (or and WST2,) the movable member 179 by the X-sided support of a state. 在图12,表示X可动件179将晶片载台WST1,单边支撑的状态。 In FIG 12, X shows a state of the movable member 179 to the wafer stage WSTl, unilateral support.

一Y轴线性发动机136Yp具备:Y轴线性导件188,是朝Y轴方向延设的固定件;及Y可动件184,沿该Y轴线性导件188移动。 A Y-axis linear motor 136Yp includes: Y-axis linear guide 188, a fixing member disposed in the Y-axis direction; and Y mover 184 moves along the Y-axis linear guide 188. 前述Y轴线性导件188,使用与前述X轴线性导件181同样构成的电枢单元。 The Y-axis linear guide 188, an armature unit using the X-axis linear guide 181 in the same configuration. 又,Y可动件184,虽是XZ截面逆U字形的形状,但z使用与前述的X可动件同样构成的A兹极单元。 And, Y movable member 184, although the shape of the cross-sectional shape reverse XZ U, but with the use of z X A movable member is hereby the same electrode cell configuration. 即,Y轴线性发动机136Y!,是动磁型电动力驱动方式的线性发动机。 That is, Y-axis linear motor 136Y !, a movable magnet type linear motor of the electrical power driving system.

另一Y轴线性发动机136Y2,具备:Y轴线性导件189,是朝Y轴方向延设的固定件;及Y可动件185,沿该Y轴线性导件189移动。 Another Y-axis linear motor 136Y2, comprising: Y-axis linear guide 189, a fixing member disposed in the Y-axis direction; and Y may be the movable member 185, moves along the Y-axis linear guide 189. 此Y轴线性发动机136Y2,是与Y轴线性发动机1361同样构成的动磁型电动力驱动方式的线性发动机。 This Y-axis linear motor 136Y2, with Y axis linear motor 1361 similar moving magnet type linear motor driving method of the electric power thereof.

又,如前迷,由将X轴线性导件181的两端部分别固定于Y可动件184、 185,若Y轴线性发动机136Yi、 136Yz产生Y轴方向的驱动力,则与X轴线性发动机136X —起使晶片载台WSTT (或WST2,)驱动于Y轴方向。 And, as before fans, both end portions of the X-axis linear guide 181 are respectively fixed to the Y movable member 184, 185, when the Y-axis linear driving force of the engine 136Yi, 136Yz produce Y-axis direction, and the X-axis linear engine 136X - from the wafer stage WSTT (or WST2,) driven in the Y-axis direction. 在此情形,由使Y轴线性发动机136Yp 136Y2所产生的驱动力不同,通过X轴线性发动机136X能控制晶片载台WST1 ,(或WST2')的Z轴周围的旋转。 In this case, the rotation, the Y-axis by the driving force of the engine different 136Yp 136Y2 generated by X-axis linear motor 136X WSTl wafer stage can be controlled, (or WST2 ') around the Z-axis.

前述第二驱动部172,配置于前述第一驱动部171的-Y側面,在图12 的纸面内形成大致对称。 The second driving unit 172 is disposed on the -Y side of the first driving unit 171, the sheet is formed substantially symmetrically in FIG. 12. 此第二驱动部172,是与上述第一驱动部171同样构成。 This second drive unit 172, the first drive unit is configured similarly 171. 即,此第二驱动部172,具备:X轴线性发动机138X,是由X轴线性导件180及X可动件178所构成的线性致动器;Y轴线性发动机138Y!, 由设置于X轴线性导件180的一端的Y可动件182及Y轴线性导件186所构成;及Y轴线性发动机138Y2,由设置于X轴线性导件180的另一端的Y 可动件183及Y轴线性导件187所构成。 That is, the second driving unit 172 includes: X-axis linear motor 138X, by the X axis linear guide 180 and an X movable member 178 constituting a linear actuator; the Y-axis linear motor 138Y !, disposed on the X axis linear guide member Y end 180 of the movable member 182 and the Y-axis linear guide 186 configured; and Y-axis linear motors 138Y2, a provided at the other end of the X-axis linear guide 180. Y of the movable member 183 and Y axis linear guide 187 constituted.

在X可动件178的+Y侧面,与X可动件179同样,设置第二连接机构196 (在图12未图标,参照图ll),与前述的第一连接机构同样,用以将晶片载台WST1,(或WST2,)连接。 X + Y side surface of the movable member 178, the movable member 179 and X Similarly, a second connecting mechanism 196 (not shown in FIG. 12, referring to FIG LL), with the same first connection means for the wafer stage WST1, (or WST2,) is connected. 主控制装置20,控制此第二连接机构196,使晶片载台WST1,(或WST2,)连接于X可动件178,或使其解除其连接。 Main controller 20, the control means 196 of this second connection, the wafer stage WSTl, (or and WST2,) X is connected to the movable member 178, so that it is released or connected. 又,在图12,表示晶片载台WST1,连接于X可动件178成为单边支撑的状态。 Further, in FIG. 12, showing the wafer stage WSTl, X is connected to the movable member 178 in a state unilaterally supported. 前述晶片载台WSTl,,具备:载台本体,与构成前述第一实施形态的晶片载台WST1不同,未设置磁极单元部分;及晶片台,是与构成在该载台本体的上面通过未图标的Z .倾斜(tilt)驱动机构所设置的前述晶片载台WST1 同样。 WSTl ,, the wafer stage comprising: a stage main body constituting wafer stage WST1 different from the first embodiment, the magnetic pole unit portion is not provided; and a wafer stage, is configured in the upper stage body by a not shown of the Z. the wafer inclination (tilt) drive means provided stage WST1 same. 在此晶片台的上面,设置+Y移动镜47Y。 Above this wafer stage is provided + Y movable mirror 47Y. -Y移动镜47Y2、十X移动镜47X于士Y侧端部及+X侧端部附近。 Near -Y movable mirror 47Y2, 47X moves to the + X side end portion of persons microscopy and Y + X side end portion.

前述晶片载台WST2,,构成为与上述晶片载台WST1,同样。 The wafer stage WST2 ,, configured with the above-described wafer stage WST1, the same. 在构成此晶片载台WST2,的晶片台的上面,设置+Y移动镜49Y^ -Y移动镜49Y2、 -X移动镜49X于土Y侧端部及-X侧端部附近。 In the above and WST2 constituting the wafer stage, the wafer stage is provided + Y movable mirror 49Y ^ -Y movable mirror 49Y2, -X movable mirror 49X in the soil near the Y side end and the -X side end portion.

又,在本第二实施形态,也在未将晶片载台WST1,的移动镜配置于附近的侧面(-X侧面),及未将晶片载台WST2,的移动镜配置于附近的側面(+X 侧面)的至少一方,设置与图10所示的弹性密封构件93同样的弹性密封构件。 Further, in the present second embodiment, the wafer stage are not WSTl, the movable mirror disposed in the vicinity of the side surface (-X side), and not the wafer stage and WST2, the movable mirror disposed in the vicinity of the side surface (+ X side) at least one is provided with the elastic seal member 10 shown in FIG. 93 similar elastic sealing member.

又,如图12所示,在投影光学系统PL的-Y侧隔既定距离,设置标记检测系统的对准系统ALG。 And, 12, separated a predetermined distance on the -Y side of the projection optical system PL, is provided on the mark detecting system of alignment system ALG.

前述干涉计系统118A,如图12所示,具有:两个Y轴干涉计151Y。 The interferometer system 118A, shown in Figure 12, comprising: two Y-axis interferometer 151Y. 151Y2,具有与将投影光学系统PL的投影中心(光轴)与对准系统ALG的检测中心连结的Y轴平行的测长轴;两个X轴干涉计151X!、 151X2,分别具有与在投影光学系统PL的投影中心(光轴)与干涉计151Y!的测长轴垂直交叉的X轴平行的测长轴;及两个X轴干涉计151X3、 15DQ,分别具有与在对准系统ALG的检测中心与干涉计151Y2的测长轴垂直交叉的X轴平行的测长轴。 151Y2, with the Y-axis is parallel to the projection center of projection optical system PL (optical axis) and a detection center of alignment system ALG coupled measuring axes; two X-axis interferometers 151X !, 151X2, respectively have a projection ! central projection optical system PL (optical axis) and the X axis interferometer 151Y parallel to the measuring axis which perpendicularly intersects the measuring axis; and two X-axis interferometers 151X3, 15DQ, respectively have in the alignment system ALG detecting the center of the measuring axis interferometer 151Y2 perpendicularly intersecting the X-axis parallel to the measurement axis.

四个X轴干涉计151 X广151X4,是相对于Y轴方向及Z轴方向离开且至少具有三支光轴的多轴干涉计,各光轴的输出值能独立测量。 Four X-axis interferometer 151 X wide 151X4, with respect to the Y-axis direction and the Z-axis direction away from the optical axis and having at least three multi-axis interferometers, the output values ​​of each optical axis can be measured independently. 因此,在这些X轴干涉计151X广151X4,除了晶片载台WST1'或WST2'的X轴方向的位置测量以外,也能测量Y轴周围的旋转量(横摇量)及Z轴周围的旋转量(偏摇量)。 Thus, in the X-axis interferometers 151X wide 151X4, in addition to the position measurement of the wafer stage WST1 'or WST2' in the X-axis direction, but also to measure the rotation around the rotation amount (rolling amount) about the Y-axis and Z-axis amount (yawing amount). 上述两个Y轴千涉计151Yp 151Y2,另—相对于Z轴方向离开且具有各两支光轴的二轴干涉计,各光轴的输出值能独立测量。 Y-Axis of the two interferometer 151Yp 151Y2, the other - with respect to the Z-axis direction away from the optical axis and having each of two two-axis interferometers, the output values ​​of each optical axis can be measured independently. 因此,在这些Y轴干涉计151Y" 151Y2,除了晶片载台WST1'或WST2,的Y轴方向的位置测量以外,也能测量X轴周围的旋转量(俯仰量)。 Thus, in these Y-axis interferometers 151Y "151Y2, in addition to the Y-axis position measurement of the wafer stage WST1 'and WST2 or, direction, but also can measure the amount of rotation (pitching amount) about the X axis.

在此情形,晶片载台WST1,位于投影光学系统PL的光轴正下方的位置的附近的区域(第一区域),要进行对其晶片载台WST1,上的晶片(在图12晶片Wl)的曝光时,在以X轴干涉计151 X。 In this case, wafer stage WSTl, located in the positive region (first region) of the optical axis of projection optical system PL in the vicinity of the lower position, to be its WSTl wafer stage, the wafer (Wl of the wafer in FIG. 12) when the exposure, the X-axis interferometer 151 X. Y轴千涉计151 Y!各测长轴所规定的第一曝光坐标系统上,进行晶片载台WST1,的XY平面内的位置管理。 Y-Axis Y interferometer 151! On a first exposure coordinate system set by the measurement axes, the position within the XY plane of wafer stage WSTl, the.

又,晶片载台WST2,位于投影光学系统PL的光轴正下方的位置附近的区域(第一区域),要进行对其晶片载台WST2,上的晶片(在图12晶片W2)的曝光时,在以X轴干涉计151X2、 Y轴千涉计151 Y!各测长轴所规定的第二曝光坐标系统上,进行晶片载台WST2,的XY平面内的位置管理。 Furthermore, if the region (first region) near the position of the wafer stage and WST2, the projection optical system PL is located immediately below the optical axis, to be its wafer stage and WST2, the wafer is exposed (FIG. 12 in the wafer W2) on , in the X-axis interferometer 151X2, Y-axis interferometer 151 Y! measurement axes under the second exposure coordinate system, the position within the XY plane of wafer stage and WST2, the.

又,晶片载台WST1,位于对准系统ALG正下方的位置附近的区域(第二区域),要进行对其晶片载台WST1,上的晶片(在图12晶片Wl)的对准(EGA)等时,在以X轴干涉计151 X3、 Y轴干涉计151 丫2各测长轴所规定的第一对准坐标系统上,进行晶片载台WST1,的XY平面内的位置管理。 Further, the wafer stage WSTl, located on the positive region (second region) of alignment system ALG in the vicinity of the bottom position, to be its WSTl wafer stage, the wafer is aligned (Wl of the wafer in FIG. 12) on the (EGA) when the like, on a first alignment coordinate system, X-axis interferometer 151 X3, Y-axis interferometer 151 Ah 2 under measurement axes performs location management within a wafer stage WSTl, the XY plane.

再者,晶片载台WST2,位于对准系统ALG正下方的位置附近的区域(第二区域),要进行对其晶片载台WST2,上的晶片(在图12晶片W2)的对准(EGA)等时,在以X轴干涉计151 Xt、 Y轴干涉计151 Y2各测长轴所规定的第二对准坐标系统上,进行晶片载台WST2,的XY平面内的位置管理。 Further, the wafer stage and WST2, is located in a region (second region) near a position directly below the alignment system ALG, and wafer stage to be its and WST2, the wafer alignment (FIG. 12 in the wafer W2), (EGA ), etc. when, in the X-axis interferometer 151 Xt, on the second alignment coordinate system, a Y-axis interferometer 151 Y2 measurement axes specified, position management and WST2 in the wafer stage, the XY plane.

其它的构成部分,是包含液体供排系统32在内构成为与前述的第一实施形态同样。 Other components, comprising a liquid supply and discharge system 32 is configured including the above-described first embodiment similarly.

其次,依图12~图15B,说明本第二实施形态的曝光装置所进行的一连串的动作,包含对一晶片载台上的晶片的曝光动作,;M"另一晶片载台上的晶片的对准动作等的并行处理动作。又,以下的动作中,由主控制装置20,按照位于投影光学系统PL正下方的第一区域的晶片载台的移动方向,如前述,进4亍液体供排系统32的液体供应装置5及液体回收装置6的各阀的开闭控制,在投影光学系统PL的前端透镜91正下方持续填满水。但是,以下, 为了要使说明容易了解,省略液体供应装置5及液体回收装置6相关的说明。 又,在晶片载台WST1,与晶片载台WST2,的移动途中,存在来自X轴干涉计或Y轴干涉计的干涉计光束,不照射于移动镜,致使要以干涉计ii行晶片载台的位置管理成为困难的区间。此情形的晶片载台位置,是由未图标的线性编码机(linearencorder)来管理,如上 Next, according to FIGS. 12 to 15B, the series of operations described according to the second embodiment performed by the exposure apparatus comprising an exposure operation of a wafer stage of a wafer,; M "other wafer stage of a wafer parallel processing operation is an alignment operation and the like. further, the following operation, the main controller 20, according to the moving direction of the wafer stage of the first area positioned directly below projection optical system PL is, as described above, the liquid supply into the right foot 4 liquid supply means opening and closing the exhaust system 32 of each valve 5 and liquid recovery unit 6 is controlled, directly under tip lens 91 of projection optical system PL is constantly filled with water. However, the following, in order to make the explanation easy to understand, the liquid will be omitted 6 middle of the movement related note supply unit 5 and liquid recovery unit. further, the wafer stage WSTl, the wafer stage and WST2, and from the presence of X-axis interferometer or the Y-axis interferometer beam interferometer meter, not irradiated to the movement mirror, resulting in an interference to the location management plan wafer stage ii line interval becomes difficult. this case the position of the wafer stage is not shown by the linear encoders (linearencorder) to manage, as 述若使用线性编码机来管理晶片载台的位置时,在来自所要的干涉计的干涉计光束会接触于移动镜的时点,由主控制装置20执行该干涉计的重置。但是,以下,为了要防止说明的烦杂化,关于4吏用线性编码机进4亍晶片载台的位置测量及干涉计的重置, 则省略其说明。 If the linear encoder when said machine to manage the position of the wafer stage, the interferometer beam from the interferometer will be in contact with the point of the movable mirror, performing a reset of the interferometer 20 by the main control unit. However, the following in order to prevent the complication of the description, with respect to the linear encoder 4 officials machine 4 into the right foot of the wafer stage interferometer position measurement and resetting the count, the description thereof is omitted.

在图12,表示:对载置于晶片载台WST1,上的晶片Wl,与前述第一实施形态同样以步进扫描方式进行曝光,并行于此,在晶片载台WST2,侧,在对准系统ALG的下方的第二区域进行对晶片W2的对准的状态。 In FIG. 12, showing: Wl wafer placed on the wafer stage WSTl, in the same manner as in step and scan exposure with the first embodiment, in parallel thereto, the wafer stage and WST2, side, alignment a second area below the system ALG on wafer W2 in the state of alignment.

又,上述对晶片Wl的曝光动作,主控制装置20,在前述笫一膝光坐标系统上边管理晶片载台WST1,的位置,边由使前述的X轴线性发动机136X、 一对Y轴线性发动机136Y!、 136Y2驱动控制,移动晶片载台WST1,来进行。 Further, the exposure operation of wafer Wl and 20, in the undertaking of a knee-optical coordinate system on top of wafer stage WSTl, the position of the main control means while a make the X-axis linear motor 136X, a Y-axis linear motor 136Y !, 136Y2 drive control moving the wafer stage WSTl, is performed.

在晶片载台WST1,側对晶片Wl以步进扫描方式执行曝光期间,在晶片载台WST2,側,执行如下的动作。 WSTl wafer stage, wafer Wl side during the scanning exposure is performed stepwise, the wafer stage and WST2, side, perform the following operation.

即,先于上述晶片对准之前,在既定的装载位置,在未图标的晶片搬送机构与晶片载台WST2'之间进行晶片交换。 That is, prior to the above-described wafer alignment until, at a predetermined loading position, the wafer transfer mechanism (not shown) and wafer stage WST2 'between the wafer exchange.

晶片交换后,主控制装置20,在前述的第二对准坐标系统上边管理晶片载台WST2,的XY面内的位置,边使用对准系统ALG执行包含检测样本标记(附设于晶片W2上的特定的多个样本照射区域)的位置资料的前述EGA, 来算出晶片W2上的多个照射区域的笫二对准坐标系统上的位置坐标。 After wafer exchange, main controller 20 in the second alignment coordinate system on top of wafer stage and WST2, the position within the XY plane while using alignment system ALG performed a test sample comprising labeled (attached on the wafer W2 EGA the specific plurality of sample shot areas) of the location data, calculates the position coordinates on the alignment coordinate system undertaking of two of the plurality of shot areas on wafer W2. 又,在图12,表示样本标记检测时的状态。 Further, in FIG. 12, showing a state when the sample mark detection. 又,主控制装置20,在检测样本标记的位置资料的前后,检测形成于晶片载台WST2,上的基准标记板FM2的第二基准标记的位置资料。 Further, the main controller 20, the test sample before and after the mark location data, the location data detected formed on the wafer stage and WST2, the reference mark plate FM2 on the second reference mark. 并且,主控制装置20,将预先所求得的晶片W2 上的多个照射区域的第二对准坐标系统上的位置坐标,转换为以第二基准标记的位置为原点的位置坐标。 Further, the main controller 20, the pre-position coordinate on the second alignment coordinate system of the plurality of shot areas on wafer W2 of the determined, converted into the position coordinates of the second reference mark position as the origin.

又,上述晶片对准时等的晶片载台WST2,的移动,是由主控制装置20 使前述的X轴线性发动机138X、 一对Y轴线性发动机138Y!、 138丫2驱动控制来进行。 Further, movement of the wafer alignment or the like of the wafer stage and WST2, is performed by the main control unit 20 moves the X-axis linear motor 138X, a pair of Y-axis linear motor 138Y !, 138 Ah drive controller.

对上述晶片栽台WST2,上的晶片W2的晶片对准动作,与对晶片载台WST1,上的晶片Wl的曝光动作,通常,是晶片对准动作先结束。 Above the wafer stage planted and WST2, wafer W2 on the wafer alignment operation, the wafer stage WSTl, Wl on wafer exposure operation, typically, a wafer alignment operation is completed earlier. 因此,主控制装置20,晶片对准的结束后,通过X轴线性发动机138X、 一对Y轴线性发动机138Y" 138Y2将晶片载台WST2,移动至图13A所示的既定待机位置,在其位置等待。 Thus, 20, after the wafer alignment by X-axis linear motor 138X, a pair of Y-axis linear motor 138Y "main controller 138Y2 and WST2 the wafer stage, as shown in FIG. 13A is moved to a predetermined standby position, in which position wait.

.其后,对晶片载台WST1,上的晶片Wl的曝光动作结束后,主控制装置20,则通过X轴线性发动机136X、 一对Y轴线性发动机136Y。 Thereafter, the wafer stage WSTl, Wl of the wafer after the exposure operation, main controller 20, the X-axis linear motor 136X, a pair of Y-axis linear motor 136Y. 136丫2使晶片载台WST1,移动至图13A所示的位置。 2 136 Ah wafer stage WST1, is moved to the position shown in FIG. 13A. 又,对晶片Wl的曝光结束位置,较佳者为设定于此图13A的位置附近。 The exposure of wafer Wl end position, preferably by the vicinity of the set position of FIG. 13A thereto.

将晶片载台WST1'移动至图13A所示的位置后,主控制装置20,通过X轴线性发动机138X及一对Y轴线性发动机138力、138丫2使晶片载台WST2,移动至图13B所示的既定待机位置。 After the wafer stage WST1 'to the position shown in FIG. 13A, 20, via X-axis linear motor 138X, and Y-axis linear motor force one pair of main controller 138, the wafer 138 Ah stage 2 and WST2, is moved to FIG. 13B predetermined standby position shown. 在晶片载台WST2,移动至图13B 的位置的状态,晶片载台WST1,与晶片载台WST2,则与前述第一实施形态同样通过弹性密封构件呈接触状态。 In the wafer stage and WST2, is moved to the position of the state in FIG. 13B, WSTl wafer stage, the wafer stage and WST2, the foregoing first embodiment was the same contact state by an elastic sealing member.

其次,主控制装置20,控制X轴线性发动才几136X、 一对Y轴线性发动机136Y^136Y2,并且X轴线性发动机138X及一对Y轴线性发动机138Yp 138Y2,使晶片载台WSTT与晶片载台WST2'同时朝+X方向移动。 Next, main controller 20 controls the X-axis linear engine only a few 136X, a pair of Y-axis linear motor 136Y ^ 136Y2, and X-axis linear motor 138X, and a Y-axis linear motor 138Yp 138Y2, the wafer stage WSTT and wafer stage WST2 'while moving toward the + X direction. 在图14A, 表示:如上述两晶片载台WST1,、 WST2,从图13B的状态同时朝+X方向移动,在包含晶片载台WST2,上的基准标记板FM2的区域与前端透镜91之间保持水的状态。 In FIGS. 14A, showing: two as described above wafer stage WST1 ,, WST2, simultaneously moving the + X direction from the state of FIG. 13B, the wafer stage and WST2 comprising, between the reference mark plate FM2 on the distal region of the lens 91 We keep the water status.

在图13B的状态,保持于投影单元PU的前端透镜91与晶片Wl之间的水,则伴随晶片载台WST1'、 WST2,朝+X侧移动,在晶片W1 —晶片载台WST1,—晶片载台WST2,上依序移动。 Water Wl between tip lens 91 and wafer in the state of FIG. 13B, the holding projection unit PU, a wafer stage is accompanied WST1 ', WST2, moved toward the + X side, the wafer W1 - wafer stage WST1, - the wafer stage WST2, the movement sequence. 又,上述移动期间,晶片载台WST1'、 WST2,则通过弹性密封构件93保持彼此接触的位置关系。 During the movement above, wafer stage WST1 ', WST2, 93 held in contact with each other by the elastic sealing member positional relationship.

其次,主控制装置20,将用前述第一连接才几构195的X可动件179与晶片载台WST1,的连接状态,及用前述第二连接机构196的X可动件178 与晶片载台WST2'的连接状态, 一起解除后,将X可动件179朝+Y方向, 将X可动件178向-Y方向稍樣t驱动。 Secondly, 20, the first control means connected to the main structure only a few X mover 195 and wafer stage 179 WSTl, connection status, and the second connecting means with the X movable element 196 and wafer stage 178 stage WST2 'is connected state is released together after the movable member 179 toward the X + Y direction, the X-like movable member 178 is slightly driven in the -Y direction t. 在图14B,表示此X可动件179、 178 的驱动后状态。 In 14B, the X indicates the movable member 179, 178 of the driving state.

又,在图14B的状态,晶片载台WST1'、 WST2',由设置于各底面(-Z 侧的面)的未图标的气垫,浮起支撑于基盘12上„但是,不限于此,也可在晶片载台WST1,、 WST2,侧或基盘12側设置可伸缩的支持脚,在将晶片载台WST1'、 WST2,与X可动件179、 178的接触解除之前,由支持脚使晶片载台WST1'、 WST2'稳定地支撑于基盘12上方。 Further, in the state of FIG. 14B, wafer stage WST1 ', WST2', a cushion disposed on each bottom surface (-Z side surface) is not shown, the float is supported on the base plate 12 ', however, is not limited thereto, may also be contained in the wafer stage WST1 ,, WST2, the base plate 12 side or the side retractable support feet, in the wafer stage WST1 ', WST2, prior to contact with the movable X 179, release member 178, a support pin wafer stage WST1 ', WST2' stably supported above base plate 12.

其次,主控制装置20,通过Y轴线性发动^U136Y!、 136Y2、 X轴线性发动机136X驱动X可动件179,移动至能连接于晶片载台WST2'的位置, 并且,通过Y轴线性发动机138Y。 Next, the main controller 20, by launching ^ U136Y !, 136Y2 of Y axis, X-axis linear motor 136X drives X mover 179 to move can be connected to wafer stage WST2 'position, and the Y-axis linear motor by 138Y. 138Y2、 X轴线性发动机138X驱动X 可动件178,移动至能连接于晶片载台WST1,的位置。 138Y2, X-axis linear motor 138X drives X mover 178 to move the wafer stage can be connected to WSTl, position. 此时,各X可动件的位置,是由未图标的编码器来管理。 At this time, each of the X position of the movable member, is not shown encoder to manage.

在图15A,表示:如上述,驱动X可动件179,移动至能连接于晶片载台WST2,的位置,驱动X可动件178,移动至能连接于晶片载台WST1'的位置的状态。 In FIGS. 15A, showing: As described above, drives the X movable member 179 to move can be connected to wafer stage and WST2, the position, drives the X movable member 178 to move to the connectable position to wafer stage WST1 'status . 其后,主控制装置20,通过第一连接机构195将晶片载台WST2, 连接于X可动件179,并且通过第二连接机构196将晶片载台WST1,连接于X可动件178。 Thereafter, the main controller 20, through the first connecting means 195 of the wafer stage and WST2, X is connected to the movable member 179, through the second connecting means 196 and the wafer stage WSTl, X is connected to the movable member 178. 又,也可不朝Y轴方向移动,而i^f亍X可动件178、 179朝X方向移动与晶片载台WST1'、 WST2'的拆装。 Yet, it may not move in the Y-axis direction, and the right foot X i ^ f the movable member 178, 179 in the X direction movement of the wafer stage WST1 ', WST2' disassembly.

如上述,在X可动件179连接于晶片载台WST2',在X可动件178连接于晶片载台WST1,后,主控制装置20,在前述第二曝光坐标系统上边管理晶片载台WST2,的位置,边使用前述标线片对准系统RAa、 RAb测量基准标记板FM2上的一对第一基准标记与标线片R上的一对标线片对准标记。 As described above, the movable member 179 in the X connected to wafer stage WST2 'in the X movable element 178 is connected to the wafer stage WSTl, after the main controller 20, the second exposure coordinate system at the upper side of wafer stage WST2 , location while using the reticle alignment systems RAa, RAb measurement reticle alignment marks of a pair of a first reference mark and reticle R on fiducial mark plate FM2. 并且,才艮据其测量结果与预先所进行的晶片对准的结果,将晶片载台WST2, 移动至用以曝光于晶片W2上的第一次的照射区域的加速开始位置。 Further, according to the results of Burgundy only the measurement results of the wafer alignment performed in advance, the wafer stage and WST2, is moved to the acceleration starting position for exposing the wafer W2 on the first irradiation region. 然后, 主控制装置20,在第二曝光坐标系统上边管理晶片载台WST2,的位置,边通过X轴线性发动机136X及一对Y轴线性发动机136Yp 136Y2,使晶片载台WST2,驱动控制,对晶片W2的步进扫描方式的曝光动作则与前述第一实施形态同样来进行。 Then, the main control unit 20, in the second exposure coordinate system on top of wafer stage and WST2, the position of the edge by the X-axis linear motor 136X, and a Y-axis linear motor 136Yp 136Y2, the wafer stage and WST2, drive control of the step and scan exposure operation of wafer W2 embodiment is similar to the foregoing first embodiment.

另一方面,主控制装置20,通过Y轴线性发动机138Y!、 138Y2,及X 轴线性发动机138X,使晶片载台WST1,向装载位置移动。 On the other hand, the main control unit 20, via 138Y !, 138Y2, X-axis linear motor and the Y-axis linear motor 138X, the wafer stage WSTl, moved to the loading position. 此移动中的晶片载台WST1,的位置,是在前述的第一对准坐标系统上管理。 This movement of the wafer stage WSTl, position, is managed on the first alignment coordinate system. 并且,在装载位置,对晶片载台WST1,上的已曝光完的晶片Wl与下一个曝光对象的晶片进行交换后,主控制装置20,与上述同样对新晶片进行晶片对准动作。 And, after the loading position of the wafer stage WSTl, the exposure has been completed on the wafer exchange and the wafer Wl a next exposure objective, main controller 20 performs wafer alignment operation on the new wafer as described above.

并且,在晶片载台WST1,的晶片对准结束,且晶片载台WST2,的曝光动作结束的阶段,晶片载台WST1,与晶片载台WST2,则经过与上述的途径完全相反的途径,再度使其回至图12的状态。 Further, in the wafer alignment WSTl wafer stage, is completed, and the wafer stage and WST2, the exposure operation ends stage WSTl wafer stage, the wafer stage and WST2, the above-described way through the opposite way, again its state back to the 12's.

如此,本第二实施形态的曝光装置,是将边进行晶片载台WST1'、 WST2, 的转换(switching),边将对另一晶片载台上的晶片的曝光动作,与另一晶片载台上的晶片交换及晶片对准动作,以同时并4亍处理进行。 Thus, this second embodiment of the exposure apparatus, is converted to the edge (Switching) of the wafer stage WST1 ', WST2, and the other side will wafer stage of a wafer exposure operation, and another wafer stage wafer exchange and the wafer alignment operation, carried out simultaneously and right foot 4 process.

从以上的说明得知,在本笫二实施形态,由晶片载台驱动部124A及主控制装置20构成载台驱动系统。 From the above description that, in the present embodiment, two sleeping mat, controlled by a wafer stage drive section 124A and the main apparatus constituting stage drive system 20. 又,由此载台驱动系统,与晶片载台WST1 ,、 WST2,构成载台装置。 And, whereby the stage drive system, wafer stage WST1 ,, WST2, device configuration stage. 又,由笫一连接机构195、第二连接^M勾、Y轴线性发动机136Y广136Y4、 X轴线性发动机136X、 138X及控制这些构件的主控制装置20构成转换装置。 Further, the connecting mechanism 195 Zi, the second connecting hook ^ M, Y-axis linear motor 136Y wide 136Y4, X-axis linear motor 136X, 138X and control of these components constituting the main controller 20 conversion means.

如以上详细说明,依本第二实施形态的曝光装置及该曝光装置所具备的载台装置,并且该曝光装置所执行的晶片栽台WST1,、 WST2,的驱动方法, 若要从一晶片载台WST1,(或WST2,)位于有液体供应的投影光学系统PL 正下方的第一区域的第一状态迁移至另一晶片载台WST2,(或WST1,)位于笫一区域的第二状态时,由载台驱动系统(20, 124A),晶片载台WST1,、 WST2,在X轴方向(前述第一区域与对准系统ALG正下方的位置附近的第二区域排列的Y轴方向交叉的方向)通过弹性密封构件93维持呈接触状态, 使晶片载台WST1'、 WST2'同时朝X轴方向驱动。 As described in detail above, the second stage apparatus under this embodiment of the exposure apparatus and the exposure apparatus is provided, and the wafer exposure apparatus performed planting stage WST1 ,, WST2, driving method, from a wafer carrier to stage WST1, (or WST2,) located in a first state of the first area of ​​projection optical system PL just below the liquid supply migrate to another wafer stage WST2, (or WST1,) in the second state when the region Zi , the stage drive system (20, 124A), the wafer stage WST1 ,, WST2, in the X-axis direction (the Y-axis direction of the first region and a second region near a position directly below the alignment system ALG is arranged crossing direction) by the elastic sealing member 93 is maintained as a contact state, the wafer stage WST1 ', WST2' are driven simultaneously in the X-axis direction.

因此,能将水(液体)以在投影光学系统PL与位于其正下方的特定的晶片载台(此晶片载台,伴随移动从一晶片载台转换为另一晶片载台)之间供应(保持)着的状态,不使液体从两晶片载台的间隙泄漏,而从一晶片载台WST1,(或WST2,)位于第一区域的第一状态迁移至另一晶片载台WST2, (或WST1,)位于第一区域的第二状态。 Thus, water can (liquid) to the projection optical system PL located directly below a particular stage supplied between the wafer (the wafer stage, along with the wafer movement from one stage to another wafer stage) ( holding) a state, the liquid does not leak from the gap of the two wafer stage, a wafer stage from WSTl, (or and WST2,) in the first state is migrated to another region of the first wafer stage and WST2, (or WST1,) in the second state of the first region. 即,在一晶片载台侧通过投影光学系统PL与水进行晶片的曝光动作后,至在另一晶片载台侧通过投影光学系统PL与水(液体)开始晶片的曝光动作为止期间,/人一晶片载台与才殳影光学系统PL之间保持水的状态,至另一晶片载台与投影光学系统PL之间保持水的状态,不需要经过水的全回收,再供应等步骤,能使其迁移。 During That is, after exposure operation of the wafer through the projection optical system PL and the water in a wafer stage side, to the other until the exposure operation of the wafer stage side via the projection optical system PL and the water (liquid) of the starting wafer, / person holding a wafer between the stage and the optical system PL before Shu water state to the other wafer stage holding the water between projection optical system PL state without going through the process of fully recovering the water and then the step of supplying the like, can making migration. 因此, 能缩短在一晶片载台侧的曝光动作结束至在另一晶片载台侧的曝光动作开始为止的时间(即,能维持于与非液浸曝光的通常的曝光装置(非液浸曝光装置)相同程度),而能获得产能的提高。 Accordingly, the exposure operation can be shortened in a wafer stage side until the start time to the end of the exposure operation on the other side of the wafer stage (i.e., able to maintain a normal exposure at the non-immersion exposure apparatus (a non-liquid immersion exposure It means the same degree)), and increase the production capacity can be obtained. 又,因在投影光学系统PL^I像面侧7j^持续存在,由与前述第一实施形态同样的理由,能长期4吏投影光学系统PL的结像性能及多点焦点检测系统的检测精度良好维持。 Further, because the projection optical system PL ^ I image plane side 7j ^ persist, the foregoing first embodiment by the same reason, the detection accuracy can be long-term performance of the imaging 4 Official projection optical system PL and the multipoint focus detection system well maintained.

又,由前述两个晶片载台WST1'、 WST2,的并行处理动作,比起具备已知的单晶片载台的曝光装置H吏用一个晶片载台,逐次执行晶片交换,晶片对准及曝光动作),能获得产能的提高。 And, carried by the two wafer stages WST1 ', WST2, the parallel processing operation, compared to the exposure device H includes known single wafer stage of a wafer-loading station officials, sequentially performs wafer exchange, wafer alignment and exposure action) can be obtained to improve production capacity. 又,在本第二实施形态的曝光装置,由以液浸曝光,进行高解像度且比 Further, in the exposure apparatus of the second embodiment, the liquid immersion exposure, and a high resolution than

空气中大焦点深度的曝光,能4吏标线片R的图案精度良好地转印于晶片上。 Air larger depth of focus of the exposure, the pattern accuracy can Officials reticle R 4 is well transferred onto the wafer. 又,在本第二实施形态,由与前述第一实施形态同样的理由,除了能防止从两晶片载台的间隙漏水外,进一步能减低晶片载台WST1,与晶片载台 Further, in the present second embodiment, the foregoing first embodiment form of the same reason, in addition to the gap can be prevented from leaking outside the two wafer stages, wafer stage can reduce further WSTl, the wafer stage

WST2'接触时的冲击。 WST2 'impact at the time of the contact.

又,在本第二实施形态,与前述第一实施形态同样,因在晶片载台WST1, Further, in the present second embodiment, similarly to the first embodiment previously described, because the wafer stage WSTl,

的-X侧面及晶片载台WST2,的+X侧面未设置干涉计用的移动镜,故即使相对于X轴方向两晶片载台近接状态,因两晶片载台上的移动镜的反射4^皮此不会近接而向面对,故能将两晶片栽台的位置由千涉计系统118A在两晶片载台同时驱动于X轴方向的期间中监视。 And -X side surface of wafer stage and WST2, the + X side surface, and no interference with the movable mirror meter is provided, so even with respect to the X-axis direction of the wafer stage two proximity state, both by the reflection on a stage movable mirror wafer ^ 4 this does not contact the skin near the face, it is possible to two wafer position during a stage planted by intervention gauge system 118A while both wafer stage is driven in the X axis direction is monitored. 又,也能防止水在移动镜的反射镜附着。 Further, water can be prevented from moving mirror attached to a mirror. ' '

又,在本第二实施形态,虽在晶片载台WST1'、 WST2,上分别配置三个移动镜,将干涉计配置六个,但移动镜及干涉计的配置并不限于上述第二实施形态的配置。 Further, in the present second embodiment, although the wafer stage WST1 ', WST2, three movable mirrors are arranged on the six interferometer configuration, but the configuration and the movable mirror of the interferometer is not limited to the above-described second embodiment, Configuration. 例如,也可采用在两晶片载台分别配置两个移动镜,使用此等两个移动镜能测量两晶片载台的位置的千涉计配置。 For example, each may also be arranged in two two mirrors move the wafer stage, the use of such two movable mirror disposed meter can measure the intervention position of the wafer stage two.

又,在本第二实施形态,保持在前端透镜91下的水,虽从一载台上移动至另一载台上后,进行X可动件178、 179的替换,但也可在水从一载台上移动至另一载台上前,进4亍X可动件178、 179的替换。 Further, in the present second embodiment, the water held under tip lens 91, although the carrier moves from one stage to the other stage, be subjected to X-178, 179 replace the movable member, but may be in the water from a stage of an other stage is moved to the front, right foot into 4 X 178 movable Alternatively, the member 179.

笫三实施形态: Zi Embodiment three:

其次,依图16~图18B说明本发明的第三实施形态。 Next, FIGS. 16 to 18B according to a third embodiment of the present invention. 在此,对与前迷第一实施形态同一或同等的部分,使用同一的符号,并且将其说明简化或省略。 Here, the front fan in the first embodiment the same or equivalent portions, using the same symbols, and description thereof will be simplified or omitted. 在此第三实施形态的曝光装置,仅晶片载台装置的构成等,是与第一实施形态不同,其它部分的构成等,则相同。 In the exposure apparatus of this third embodiment, only the configuration of the wafer stage apparatus, is different from the first embodiment, like other parts of the configuration is the same. 因此,以下,为避免重复说明仅以相异处为中心说明。 Therefore, the following description to avoid repetition only centered at different explanation.

本第三实施形态的晶片载台50",如图16所示,与前述的构成第一实施形态的曝光装置的晶片载台装置50不同,具备:能载置晶片的晶片载台WST;及测量专用的测量载台MST。 This third embodiment of the wafer stage 50 ', shown in Figure 16, 50 and the different means of wafer stage exposure apparatus constituting a first embodiment aspect, comprising: a wafer to be placed in the wafer stage WST; and measurement dedicated measurement stage MST.

所述晶片载台WST及测量载台MST,对应前述第一实施形态的晶片载台WST1及晶片载台WST2,由与第一实施形态同样的晶片载台驱动部(80-87 ) ^使其在二维面内驱动。 The wafer stage WST and measurement stage MST, corresponding to the first embodiment of the wafer stage WST1 and wafer stage WST2, (80-87) ^ the first embodiment so that the same form of wafer stage drive section drive in the two-dimensional plane.

又,在投影光学系统PL(投影单元PU的镜筒)附近,仅设置一个对准系统ALG。 Further, in the vicinity of the projection optical system PL (the barrel of projection unit PU), only one alignment system ALG. 又,投影单元PU与对准系统ALG,实际上,如图16所示呈内嵌状态。 Further, the projection unit PU and alignment system ALG, in fact, the state shown in FIG. 16 was embedded. 即,在比投影单元PU的下端部附近的其它部分形成小径的部分的外侧(前端透镜的周围部分)且投影单元PU的大径部的下方部分,将对准系统ALG的至少下端部定位。 That is, (the peripheral portion of the tip lens) and the lower portion of the large-diameter portion of the projection unit PU in the outside diameter than other portions is formed near the bottom end portion of the projection unit PU, will be positioned at least a lower portion of the alignment system ALG.

在前述测量载台MST的上面,设置各种测量用构件。 In the above measurement stage MST, various measurement members are arranged. 此测量用构件, 例如,包含:基准标记板,将日本特开平5-21314号公报及对应于此的美国专利第5,243,195号等所揭示的多个基准标记形成;及感测器,通过投影光学系统PL将照明用光IL受光等。 This measurement members, for example, comprising: a reference mark plate, a plurality of reference Publication JP 5-21314 and U.S. Patent No. 5,243,195 disclosed the like corresponding to this mark is formed; and the sensor, via a projection optical system PL light illumination light IL and the like. 感测器,例如,能采用:照«视器,具有既定面积的受光部,在日本特开平11-16816号公才^对应于此的美国专利申请公开第2002/0061469号说明书等所揭示的投影光学系统PL的像面上将照明用光IL受光;照度不均感测器,具有针孔状的受光部,在日本特开昭57-117238号7>净艮;^应于此的美国专利第4,465,368号等所揭示的投影光学系统PL的像面上将照明用光IL受光;空间像测量器,测量图案的空间像(投影像)的光强度,由在日本特开2002-14005号公才^对应于此的美国专利申请公开第2002/0041377号说明书等所揭示的投影光学系统PL投影等。 Sensors, for example, can be employed: according to «monitor, a light receiving portion having a predetermined area, in Japanese Laid-Open Patent No. 11-16816 U.S. ^ corresponding to this well was Application Publication No. 2002/0061469 disclosed the like image plane of projection optical system PL and the illumination light IL receiving light; uneven illuminance sensor, has a pinhole-shaped light-receiving section, net Gen in Japanese Laid-open Patent Publication No. 57-1172387>; ^ should this U.S. Patent No. 4,465,368 on the image plane and the like disclosed in the projection optical system PL and the illumination light IL receiving light; aerial image measuring instrument, the aerial image measurement pattern light intensity (projection image), in Japanese Patent Laid-open No. 2002-14005 by the ^ corresponding to the public only thereto U.S. Patent application Publication No. 2002/0041377 projection optical system disclosed in the specification like projection PL and the like. 在本案所指定的指定国(或所选择的选择国)的国内法令所允许的范围, In this case the scope of the designated states (or selected selected countries) national laws allow,

援用上述公报;sjJt应于此的美国专利申请公开说明书或美国专利的揭示,作 Found in the above Publication; sjJt should U.S. Patent Application Publication herein or disclosed in the specification of U.S. Patent, as

为本说明书的记载的一部分。 Part of this description described. 又,载置于晶片载台WST上的测量用构件, And, placed on the measuring member on the wafer stage WST,

不限于在此所列举者,视必要能载置各种测量用构件。 It is not limited to those enumerated herein, to be placed, as necessary, various measurement members.

又,在本实施形态,对应进行液浸曝光(通过投影光学系统PL与水由曝光用光(照明用光)IL来曝光晶片),在《吏用于用照明用光IL的测量的上述照«视器、照度不均感测器、空间像测量器,通过投影光学系统PL 与水将照明用光IL受光。 Further, in this embodiment, corresponding to the liquid immersion exposure (through the projection optical system PL and the water by the exposure light (illumination light) IL for exposure of the wafer), as in the above-described "Official for measuring illumination light IL is «monitor, the uneven illuminance sensor, aerial image measuring instrument, through the projection optical system PL and the water receiving light illumination light IL. 又,各感测器,例如也可仅将光学系统等的一部分载置于测量载台MST,也可将感测器全体配置于测量载台MST。 Further, each of the sensors, for example, may be only a part of the optical system is placed on the MST measurement stage, the sensor may be disposed in the entire measurement stage MST.

又,在晶片载台WST,可载置测量用构件,也可不载置。 Further, the wafer stage WST, can be measured with the mounting member, may not be placed.

又,在本第三实施形态,与前述第一实施形态同样,在晶片载台WST 的-X侧面与测量载台MST的+X侧面的至少一方,设置与图IO的弹性密封构件93同样的弹性密封构件。 Further, in the present third embodiment, similarly to the foregoing first embodiment, the elastic seal member wafer stage WST in the -X side surface and the + X side of at least one measurement stage MST is provided with the same in FIG. 93 IO an elastic sealing member.

以下,对使用本第三实施形态所具备的晶片载台WST与测量载台MST 的并行处理动作,依图16〜图18B加以说明。 Hereinafter, using the present third embodiment includes a wafer stage WST and measurement stage MST parallel processing operation will be described in accordance with FIG. 16~ FIG 18B. 又,在本第三实施形态的曝光装置,也设置与第一实施形态同样的干涉计系统,使晶片载台WST与测量载台MST的位置,与第一实施形态同样加以管理。 Further, in the exposure apparatus of the present third embodiment, the first embodiment is also provided with the same form of an interferometer system, the wafer stage WST and stage MST to the position measurement, is managed similarly with the first embodiment. 以下的说明,为了要避免重复说明,省略关于干涉计系统的两载台位置管理的记载。 The following description, in order to avoid repeated description, description on the interferometer system two stage location management will be omitted. 又,以下的动作中,由主控制装置20,按照位于投影单元PU正下方的第一区域的载台的移动方向,如前述进4亍液体供排系统32的液体供应装置5及液体回收装置6 的各阀的开闭控制,在投影光学系统PL的前端透镜91正下方持续填满水。 Further, the following operation, the main controller 20, according to the moving direction of the stage the first region is located directly below projection unit PU, as the right foot 4 into the discharge liquid supply system 32 of the liquid supply unit 5 and liquid recovery closing the control valves 6, is constantly filled with the water directly under tip lens 91 of projection optical system PL. 但是,以下,为了要使说明容易了解,省略关于液体供应装置5及液体回收装置6的控制的说明。 However, the following, in order to make the explanation easy to understand, description of the liquid supply unit 5 and liquid recovery unit 6 of the control is omitted.

在图16,表示与第一实施形态同样进行对晶片载台WST上的晶片W的步进扫描方式的曝光的状态。 In FIG. 16, showing the state of the same exposure step and scan mode of wafer W on wafer stage WST in the first embodiment. 此时,测量载台MST,在既定的待机位置(不会与晶片载台WST冲突)等待。 At this time, the MST measurement stage, at a predetermined standby position (not conflict with the wafer stage WST) to wait.

并且,在晶片载台WST侧,例如1批(1批是25片或50片)晶片W 的曝光结束的阶段,主控制装置20,使测量载台MST移动至图17A所示的位置。 Further, the wafer stage WST side, for example, a batch (Batch 1 was 25 or 50) of the wafer W exposure end stage, main controller 20 moves measurement stage MST to the position shown in FIG. 17A. 在此图17A的状态,测量载台MST与晶片载台WST,是通过前述弹性密封构件接触。 In the state of this FIG. 17A, measurement stage MST and wafer stage WST, is contacted by the elastic sealing member.

其次,主控制装置20,边保持测量载台MST晶片载台WST与测量载台MST的X轴方向的位置关系,边开始将两载台WST、 MST同时朝+X方向驱动的动作。 Next, the main controller 20, while maintaining the positional relationship between the X-axis direction measurement stage MST and wafer stage WST and measurement stage MST, and the two sides start stage WST, MST is driven while the operation of the + X direction.

如上述,由主控制装置20,使晶片载台WST、测量载台MST同时驱动后,在图17A的状态,保持于投影单元PU的前端透镜91与晶片W之间的水,则伴随晶片载台WST、测量载台MST朝+X侧移动,在晶片W—晶片载台WST—测量载台MST上依序移动。 As described above, main controller 20 moves wafer stage WST, the measurement stage MST are simultaneously driven, in the state of FIG. 17A, the water held in between the wafer W and tip lens 91 of projection unit PU, a wafer carrier along the stage WST, MST + X measurement moved toward the stage, the wafer stage WST- W- wafer sequentially measuring movement stage MST. 又,上述移动期间,晶片载台WST、 测量载台MST则与图17A的状态同样通过弹性密封构件保持彼此接触的位置关系。 During the movement above, wafer stage WST, and the measurement stage MST in the same state of Fig. 17A by the elastic seal member held in contact with each other positional relationship. 在图17B,表示:在上述移动途中,水(液浸区域)同时跨越于晶片载台WST、测量载台MST而存在时的状态,即从晶片载台WST上将水待供应于测量栽台MST上之前的状态。 In 17B, the said: In the middle of the movement, the water (the immersion area) simultaneously across the wafer stage WST, the measurement state when the MST is present stage, i.e., stage WST on the wafer from the water to be supplied to the measuring station plant MST the state before.

从图17B的状态,进一步使晶片载台WST、测量载台MST朝+X方向同时驱动既定距离,则如图18A所示,形成测量载台MST与前端透镜91 之间保持水的状态。 From the state of FIG. 17B, further wafer stage WST, measurement stage MST in the + X direction driven simultaneously by a predetermined distance, as shown in FIG 18A is formed measurement stage MST and tip lens 91 between the water holding state.

其次,主控制装置20,使晶片载台WST移动至既定的晶片交换位置并且进4亍晶片的交换,与此并行,按照需要执行使用测量载台MST的既定的测量。 Next, main controller 20 moves wafer stage WST to a predetermined wafer exchange position and the right foot into the wafer exchange 4, parallel with this, according to a predetermined measurement needs to be performed using the measurement stage MST. 此测量,例如在标线片载台RST上的标线片交换后进行。 This measure, for example, the reticle in the reticle stage RST exchange. 对准系统ALG的基线测量,可作为一例。 Baseline measurement of alignment system ALG, as an example can be. 具体而言,主控制装置20,使用前述的标线片对准系统RAa、 RAb同时检测与基准标记板FM上(设置于测量载台MST上)的一对第一基准标记对应的标线片上的标线片对准标记,来检测对应一对第一基准标记的标线片对准标记的位置关系。 On the reticle corresponding to the pair of first reference mark Specifically, the main controller 20, using the aforementioned reticle alignment systems RAa, RAb and simultaneous detection of the reference mark plate FM (provided on the measuring stage MST) of the reticle alignment mark is detected corresponds to a positional relationship between the first fiducial mark reticle alignment marks. 与此同时,主控制装置20,由以对准系统ALG检测上述基准标记板FM上的第二基准标记,来检测对准系统ALG的检测中心与第二基准标记的位置关系。 At the same time, main controller 20, to detect the second reference marks on the reference mark plate FM alignment system ALG, detects the positional relationship between the detection center of alignment system ALG and the second fiducial mark. 并且,主控制装置20,根据对应上述一对第一基准标记的标线片对准标记的位置关系及对准系统ALG的检测中心与第二基准标记的位置关系,以及既知的一对第一基准标记与第二基准标记的位置关系,求得投影光学系统PL的标线片图案的投影中心(投影位置)与对准系统ALG的检测中心(检测位置)的距离。 Further, the main controller 20, according to the corresponding the pair of first reference mark reticle alignment marks and the positional relationship of the positional relationship between the detection center of alignment system ALG and the second fiducial marks, and a pair of first predetermined to reference mark and the second fiducial mark positional relationship between the projection center to obtain a reticle pattern projection optical system PL (projection position) and the detection center of alignment system ALG distance (detection position). . 又,将此时的状态,表示于图18B。 . Further, at this time the state shown in FIG. 18B. 又,测量上述对准系统ALG的基线,并且在标线片上将标线片对准标记复数对形成,对应于此在基准标记板FM上形成复数对第一基准标记,将至少二对的笫一基准标记与所对应的标线片对准标记的相对位置,由边使标线片载台RST、测量载台MST移动,边使用标线片对准系统RAa、 RAb测量,进行标线片对准。 Further, the above-described baseline measurement of alignment system ALG, and the reticle on the reticle alignment marks are formed on a plurality, corresponding to this plurality of pairs of first reference mark is formed, at least two pairs of Zi on the reference mark plate FM a relative position of the reference marks and the corresponding reticle alignment marks, so that the edge of the RST reticle stage, the measurement stage MST is moved while using reticle alignment systems RAa, RAb measurements performed reticle alignment.

在此情形,使用标线片对准系统RAa、 RAb的标记的检测,是通过投影光学系统PL及水来进行。 In this case, using reticle alignment systems RAa and, detectably labeled RAb is performed via projection optical system PL and water.

接着,在上述两载台WST、 MST上的作业结束的阶段,主控制装置20, 例如将测量载台MST与晶片栽台WST,维持着通过弹性密封构件使其呈接触状态,在XY面内驱动,与前述同样对交换后的晶片W进行晶片对准, 即使用对准系统ALG进行交换后的晶片W上的对准标记的检测,而算出晶片W上的多个照射区域的位置坐标。 Next, the above-described two stage WST, MST jobs on the end of a stage, main controller 20, for example, measurement stage MST and wafer stage WST planted, maintained by the elastic sealing member state that it was in contact with the inner surface of the XY driving, similar to the exchange of the wafer W with the wafer alignment, i.e., using the detected alignment mark on the wafer W after the exchange of alignment system ALG, positional coordinates of the plurality of shot areas on the wafer W is calculated.

其后,主控制装置20,与前述者相反,边保持晶片载台WST与测量载台MST的位置关系,边使两载台WST、 MST朝-X方向同时驱动,使晶片载台WST (晶片W)移动至投影光学系统PL的下方后,即液浸区域从测量载台MST移动至晶片载台WST (晶片W)上后,使测量载台MST退避至既定位置。 Thereafter, 20, and the main control unit by contrast, while maintaining the positional relationship between the wafer stage WST and measurement stage MST, so that the two sides stage WST, MST in the -X direction while driving the wafer stage WST (wafer after W) to move under the projection optical system PL, i.e., the liquid immersion area from the measuring stage MST to move the wafer stage WST (wafer W) on the measuring stage MST to a predetermined retracted position.

其后,主控制装置20,对晶片W执行步进扫描方式的曝光动作,将标线片图案依序转印于晶片W上的多个照射区域。 Thereafter, the main controller 20 performs exposure operation of the wafer W is step-scan method, the reticle pattern sequentially transferred to the plurality of shot areas on the wafer W. 又,为了晶片W上的各照射区域的曝光,晶片载台WST移动至加速开始位置,^i艮据上述晶片对准的结果所得的晶片W上的多个照射区域的位置坐标,与之前所测量的基线来进行。 Further, the exposure to each shot area on the wafer W, the wafer stage WST is moved to the acceleration starting position, the position coordinates of a plurality of ^ shot areas on the data obtained in the above i Gen wafer alignment results wafer W, and previously baseline measurements carried out. . .

又,在上述说明,测量动作,虽对要进行基线测量的情形说明,但不限于此,也可使用测量载台MST,将照度测量、照度不均测量、空间像测量等,例如与晶片交换一起进行,使用其测量结果,反应于其后要进行的晶片W的曝光。 Further, in the above description, the measurement operation, although the baseline measurement for the case to be described, but is not limited thereto, and can be measured using the MST stage, the illuminance measurement, irregular illuminance measurement, aerial image measurement and the like, for example, wafer exchange carried out together, using the measurement result, the wafer W after the reaction to be carried out thereon exposed. 又,载置于测量载台MST的感测器,不限于上述,也可设皇例如进4亍波面测量的感测器。 And, placed on the sensor measurement stage MST is not limited to the above, may be provided, for example, Huang right foot 4 into a wavefront measurement sensor.

又,在上述第三实施形态,虽说明对1批的晶片W的曝光结束时,橫: 晶片载台WST与测量载台MST接触而移动,使在投影光学系统PL与测量载台MST之间保持水,但是较佳的为每于各晶片交换,进行上述动作,使在投影光学系统PL与测量载台MST之间保持水,则不必多言。 Further, in the above-described third embodiment, although the end of the description of a batch exposure of the wafer W, the horizontal: the wafer stage WST and measurement stage MST is moved into contact, so that the projection optical system PL measurement stage MST between holding water, but preferably each wafer in each exchange, the above-described operation, holding the water between the projection optical system PL and measurement stage the MST, it is not much to say. 又,基线等的测量,如前述,也可每于l批的曝光结束时进行,也可每于晶片交换,或既定片数的晶片的曝光结束后进行。 In addition, the baseline measurement and the like, as described above, may be performed at the end of each batch l exposure, the wafer may each exchange, the number of, or exposure of the wafer after the end of a predetermined sheet.

如/人上述说明可知,在本第三实施形态,与第一实施形态同样,由晶片载台驱动部(80~87)构成载台驱动系统的至少一部分。 As / apparent person described above, in the present third embodiment, similar to the first embodiment aspect, at least part of wafer stage drive section (80 to 87) constituting stage drive system. 又,由载台驱动系统与晶片载台WST与测量载台MST构成载台装置的至少一部分。 Further, the stage drive system and wafer stage WST and measurement stage MST constitute at least a portion of the stage apparatus.

如以上所说明,依本第三实施形态的曝光装置及该曝光装置所具备的载台装置,从晶片载台WST (或测量载台MST),位于有液体(水)供应的投影光学系统PL正下方的第一区域的第一状态迁移至测量载台MST (或晶片载台WST)位于第一区域的第二状态时,由上述载台驱动系统,维持两载台于X轴方向通过弹性密封构件呈接触状态,使晶片栽台WST、测量载台MST朝X轴方向同时驱动。 As described above, the stage apparatus under this third embodiment of the exposure apparatus and the exposure apparatus is provided, the wafer stage WST (or measurement stage the MST), located in the projection optical system of a liquid (water) supplied PL a first state of the first area directly below the measuring stage migrate to the MST (or wafer stage WST) is in the second state of the first area, the stage drive system described above, the stage is maintained in the two X-axis direction by the elastic the sealing member has a contact state, the wafer stage WST plant, measurement stage MST in the X axis direction are simultaneously driven. 因此,以在投影光学系统PL与位于其正下方的特定载台(此载台,伴随移动,从一载台转换为另一载台)之间供应着水(液体)的状态,不会从两载台的间隙使液体泄漏,使能从一载台位于第一区域的第一状态迁移至另一载台位于第一区域的笫二状态。 Therefore, the projection optical system PL and which is located directly below the specific stage (this stage, with the movement, the conversion from one stage to another stage) the supply state of the water (liquid) between, not from stage of the two gaps leaking liquid, so that migration from one stage of the first region in the first state to the other stage is positioned in the first region of two great undertaking. 即,在晶片载台WST侧通过投影光学系统PL与水(液体)进行曝光动作后,至在测量载台MST在投影光学系统PL正下方开始测量为止期间,从一晶片载台WST 与投影光学系统PL之间保持水的状态至测量载台MST与投影光学系统PL 之间保持水的状态,不需要经过水的全回收,再供应等步骤,能使其迁移。 That is, after the exposure operation on wafer stage WST side via projection optical system PL and the water (liquid) to the measuring stage MST during the projection optical system PL below until start of measurement, stage WST and projection optics from a wafer holding the water between the measurement system PL to a state the water is held between stage MST and the projection optical system PL state without going through the process of fully recovering the water and then supplying other steps, it can migrate. 又,对使用测量载台MST的测量结束后,至使用晶片载台WST的曝光开始为止,也相同。 Further, after using measurement stage MST is measured, the wafer stage WST to use until the start of exposure, are also the same.

因此,将/人晶片载台WST側的曝光动作结束至测量载台MST侧的测量动作开始的时间,A/人测量载台MST侧的测量结束,至晶片载台WST侧的曝光动作开始的时间缩短(即,维持于与非液浸曝光的通常的曝光装置(非液浸曝光装置)相同程度),能获得产能的提高。 Accordingly, the exposure operation stage WST side / human wafer end to measure the time measurement operation stage MST side is started, A / person end of the measurement the measurement stage MST side, to wafer exposure operation stage WST side starting shortened (i.e., maintained in an ordinary exposure apparatus (a non-immersion exposure apparatus) to the same extent as the non-immersion exposure), improve the production capacity can be obtained. 又,在投影光学系统PL 的像面侧,因持续存在水(液体),故能有效地防止前述的水紋(水痕)产生。 Further, in the image plane side of the projection optical system PL, due to the continued presence of water (liquid), it can be effectively prevented of water stains (water marks) is generated.

又,由液浸曝光,进行高解像度且比空气中大焦点深度的曝光,能使标线片R的图案精度良好地转印于晶片上,例如当作元件规格能实现70~100nm程度的微细图案的转印。 Further, the liquid immersion exposure, high resolution and a larger depth of focus than air exposure, the pattern accuracy can reticle R is transferred onto a wafer well, such as element size can be realized a fine degree of 70 ~ 100nm the transfer pattern.

又,因能每于晶片的交换等,使用载置于测量载台MST的测量用构件进行各种测量,使测量结果反应于其后的曝光动作,故能以持续调整为高精度的状态进行晶片的曝光。 Further, due to the exchange can each wafer or the like, placed using measurement stage MST, various measurement members, the measurement results of the reaction after the exposure operation thereon, it can continue to be adjusted to a state with high precision exposure of the wafer.

又,若使用测量载台MST所进行的测量动作是不使用照明用光IL,也能将测量载台MST侧的测量动作,与晶片载台WST侧的晶片W的曝光动作一起进行。 Further, when the measurement operation using the measurement stage MST is performed without using illumination light IL, is also capable of measuring stage MST side of the operation, exposure operation and wafer stage WST side of the wafer W is carried out together.

又,在上述第三实施形态,虽以将测量载台MST与晶片载台WST通过弹性密封构件呈接触状态进行晶片对准,但也可在要进行晶片对准之前,以使两个载台呈接触状态,将晶片载台WST移动至投影光学系统PL(及对准系统ALG)的下方,使测量载台MST退避后,进行晶片对准。 Further, in the above-described third embodiment, although in the measurement stage MST and wafer stage WST by the elastic sealing member as a contact for wafer alignment, but may also be performed prior to the wafer alignment, so that the two stage after the contact was, the wafer stage WST moves to the projection optical system PL (and alignment system ALG) below, the measuring stage MST retracted, wafer alignment performed.

又,在上述笫三实施形态,虽能使基准标记板FM上的第一基准标记与第二基准标记同时测量,但也可测量第一基准标记与第二基准标记的一方后,以在测量载台MST上保持水的状态移动来测量另一方。 Further, in the above-described three Zi embodiment, although the first reference mark can on the reference mark plate FM and the second reference mark measured simultaneously, but may also be measured after the one of the first reference marks and the second reference marks, in order to measure keep the water moving on stage MST are measured by the other.

又,上述第一〜第三实施形态所使用的弹性密封构件,如图19A所示, 也可采用弹性密封构件93',在一载台(在此,是载台WST2( WST2,、MST)) 的+X侧面形成截面大致梯形状的槽49,在该槽49以埋入状态装配。 Further, the elastic seal member of the first to third embodiment is used, as shown in FIG. 19A, the resilient seal member 93 may also be used 'in a stage (here, the stage WST2 (WST2,, MST) ) + X side surface of the groove 49 formed in a substantially trapezoidal cross section, the fitting groove 49 in a buried state. 如此构成,也能获得与上述各实施形态同样的效果。 With this configuration, it can be obtained with the above-described embodiment, the same effect. 对此图19A所示的构成,也可不仅在一载台,而在双方的载台设置。 This configuration shown in FIG. 19A, may be not only in a stage, the stage in both settings. 又,如图19B所示,也可在一载台(在此,是载台WST1 (WST1,、 WST))的+Z面形成截面大致梯形状的槽49,,在该槽49,将弹性密封构件93"以埋入状态装配,在另一载台(在此,是载台WST2 (WST2,、 MST)) 上面的+X侧端部设置平板94。在此情形,在两载台呈近接状态,由平板94 接触于弹性密封构件93",如图19B所示,能使水不会从两载台间泄漏。 And the groove, as shown in FIG. 19B, but also in a stage (here, the stage WST1 (WST1 ,, WST)) on the + Z face of a substantially trapezoidal cross section is formed in the groove 49 ,, 49, elastic a sealing member 93 'is embedded in a fitted state, another stage (here, the stage WST2 (WST2 ,, MST)) above the + X side end plate is provided in this case, was in the stage 94. the two proximity state, the flat plate 94 in contact with the elastic seal member 93 ", as shown in FIG. 19B, the water can not leak from between the stage.

又,如图19C所示,也可由在两载台所对向的各侧面例如由铁氟龙(登录商标)等施加拨水被膜95,以在两载台的间隙防止水的渗入及漏水。 And, FIG. FIG. 19C, also be two in each side of the stage, for example, the water-repellent film 95 is applied by a Teflon (registered trademark), to a gap of two stage prevent water penetration and leakage. 藉此, 因两载台间能维持非接触状态,故不会引起两载台的近接所造成的载台变形或位置控制精度恶化等之虞。 Whereby, due to the two stage between a non-contact state can be maintained, it will not cause the two stage proximity caused by deformation stage position control accuracy or the like danger of deterioration.

又,在上述第一〜第三实施形态,虽设置弹性密封构件,但也可不必设置無性密封构件及其它抑制漏水的抑制构件。 Further, in the first to third embodiment, although the elastic seal member, but may not necessarily be provided a sealing member asexual and other suppression member suppressing leakage. 在此情形,也可在从一载台位于投影光学系统PU正下方的状态迁移至另一载台位于投影光学系统PU正下方的状态的期间,使两载台直接接触。 In this case, the migration may be from a stage located directly below the projection optical system PU state to another state of the stage during the projection optical system is positioned directly below the PU, so that the two stage direct contact. 又,虽由两载台的材质、两载台的表面状态或形状、液体的种类等而定,但即使在迁移时两载台近接状态(例如两载台的间隔是2mm以下),若由液体的表面张力不使液体泄漏,则也可不施加拨水净«。 Further, although the material of both stages, the surface state or shape, kind of the liquid two stage or the like may be, but even when migrating two stage proximity state (e.g., spaced two stage is 2mm or less), if the surface tension of a liquid without liquid leakage, the net may not be applied to the water-repellent «. 主要是要维持不使液体从两载台间泄漏的位置关系,来使两载台迁移即可。 Mainly to maintain not the positional relationship between the liquid leaking from between both stages to migrate to the two stage.

又,迁移时在两载台间水(液体)的泄漏,若泄漏量^:少,因有时候也有被容许的情形,故迁移时的两载台的间隔,不仅要考虑载台的材质或载台的表面状态或形状、液体的种类,也可考虑容许泄漏量来决定。 Also, when migrating water (liquid) leakage between the two stage, if the leakage ^: small, because sometimes there is allowed the case, so the two stage interval during migration, not only to consider the material stage or surface condition or shape, of the kind of liquid stage, may also be considered to determine the amount of allowable leakage.

又,在上述第一〜第三实施形态,虽在两个载台的接触面未形成移动镜的反射面,但此不是必须要件,只要能防止水从两个载台泄漏,也可在至少一载台的接触面形成移动镜的反射面。 Further, in the first to third embodiment, although the contact surface is not formed in the two stage movement of the reflecting surface of the mirror, but this is not an essential requirement, as long as water is prevented from leaking from the two stage, it may be at least a reflecting surface of the stage contact face of the movable mirror is formed. 这种实施形态,例如能考虑如下的第四实施形态。 This embodiment, for example, the fourth embodiment can be considered as follows.

第四实施形态: Fourth Embodiment:

其次,依图20〜图23B说明本发明的第四实施形态。 Next, according to FIG. 20~ 23B illustrates a fourth embodiment of the present invention. 在jHi,对与前述第三实施形态相同或同等的部分,使用相同的符号,并且将其说明筒化或省略。 In Jhi, the same or equivalent portion of the third embodiment, the same reference numerals, and a description thereof will be omitted or cartridge. 在此第四实施形态的曝光装置,仅晶片载台装置的构成(包含干涉计的配置),与前述第三实施形态一部分不同,其它部分的构成等,则与第三实施形态的装置相同。 In the exposure apparatus of this fourth embodiment, the configuration (configuration interferometer comprising meter), different part of the third embodiment, the other portion constituting such apparatus is the same as the third embodiment only a wafer stage apparatus. 因此,以下,为了要避免重复说明,仅以相异处为中心说明。 Thus, the following, in order to avoid duplication of description, only centered at different explanation.

本第四实施形态的晶片载台装置150,如图20所示,具备:晶片载台WST,,能栽置晶片;测量专用的测量载台MST,;及千涉计系统,包含六个激光干涉计(以下,简称"干涉计,,)IF1〜IF6。 The fourth embodiment of this aspect of the wafer stage apparatus 150, shown in Figure 20, comprising: a wafer stage WST ,, can be planted facing the wafer; dedicated measurement stage MST ,; and intervention gauge system, comprising six laser interferometer (hereinafter, referred to as "interferometer ,,) IF1~IF6.

前述晶片载台WST,,虽下述两点是与前迷第三实施形态的晶片栽台WST不同,即,第一点,如图21所示,将其-X侧(测量载台MST,对向的侧)的上端部一部分形成为比其它部分突出的板状的凸缘部llla,及第二点,在其+X侧端面Se及+Y侧端面Sd设置镜面加工所形成的反射面,来替代前述的移动镜,但是其它部分,则构成为与晶片载台WST相同。 The wafer stage WST ,, although the following two points are the front fan of the third embodiment different from the wafer stage WST plant, i.e., a first point, as shown in FIG -X side thereof (measuring stage MST 21, an upper portion of the side) is formed in a portion of the reflecting surface of the flange portion llla than the other portions of the plate-like projection, and a second point, mirror finish is provided on its + X side end and the + Y side end Se Sd formed , instead of the movable mirror, but the other portions are configured the same as the wafer stage WST. 又,此晶片载台WST,的上面,以载置晶片W的状态,包含晶片W表面及凸缘部llla,全面是大致同一平面(同一面)。 Further, this wafer stage WST, above, in a state of mounting the wafer W, the wafer W comprising LLLA surface and the flange portion, a substantially full flush (flush).

前述测量载台MST,,虽下述两点是与前述第三实施形态的测量载台MST不同,即,第一点,如图21所示,在其+X侧(与晶片载台WST,对向的侧K殳置突部lllc,将隔着既定间隙卡合于前述凸缘部llla的段部lllb 设于其上端部;及第二点,在其-X侧端面Sa、十Y侧端面Sb、 ^+X侧的端面(突部111c的+X側的端面)Sc,设置镜面加工所形成的反射面,来替代前述的移动镜;但是其它部分,则构成为与测量栽台MST相同。在此情形, 如图21所示,在晶片载台WST,的凸缘部llla与测量载台MST,的段部lllb 卡合的状态,使晶片载台WST'的上面与测量载台MST,的上面全体能形成全平面。 The measurement stage MST ,, although the following two points and measurement stage MST different from the third embodiment, i.e., a first point, shown in Figure 21, in which the + X side (the wafer stage WST, lllb segment portion of the side projecting portion lllc Shu opposing direction K, via the predetermined gap portion engages the flange llla upper portion provided thereon; and a second point, its end surface Sa on the -X side, ten Y side end surface Sb, ^ + end faces (+ end surface X side of projected section 111c) X side Sc, the reflecting mirror surface processing is formed, instead of the movable mirror; however other portions are configured to measure the plant stage MST llla measured in the same flange portion. in this case, as shown in FIG. 21, the wafer stage WST, the MST of stage, the segment portion lllb engaged state, the wafer stage WST 'and measurement stage above MST, above all capable of forming a full plane.

本实施形态的晶片载台WST,及测量载台MST,,与前述的第三实施形态的晶片载台WST及测量载台MST同样,由晶片载台驱动部(8047)使其在二维面内驱动。 The present embodiment the wafer stage WST, and measurement stage MST ,, and the above-described third embodiment of the wafer stage WST and measurement stage MST Similarly, the two-dimensional plane by a wafer stage drive section (8047) that it in the drive.

前述干涉计系统,如图20所示,具有:三个Y轴干涉计IF3、 IF4、 IF2, 分别具有分别通过投影光学系统PL的投影中心(光轴AX),对准系统ALG 的各检测中心,及从投影光学系统PL的投影中心离既定距离于-X方向的位置且平行于Y轴方向的测长轴;两个千涉计IF1、 IF5,分别具有连结投影光学系统PL的投影中心(光轴AX)及对准系统ALG的检测中心且平行于X 轴的测长轴;及干涉计IF6,具有与通过从投影光学系统PL的投影中心起于-Y方向离既定距离位置的X轴方向平行的测长轴。 The interferometer system shown in Figure 20, comprising: three Y-axis interferometers IF3, IF4, IF2, respectively, by having a projection center of the projection optical system PL (optical axis AX), each detection center of alignment system ALG are and from the projection center of the projection optical system PL and is parallel to the Y-axis direction position of a predetermined distance from the measuring axis in the -X direction; two one thousand interferometer IF1, IF5, each having a connecting projection center of projection optical system PL ( optical axis AX) and the detection center and is parallel to the X measuring axes of alignment system ALG; and interferometer IF6, and by having the projection from the center of the projection optical system PL from the X-axis position of a predetermined distance in the -Y direction measuring axis direction parallel.

在此,晶片载台WST,位于投影光学系统PL的光轴正下方的位置附近的区域(第一区域),对其晶片载台WST上的晶片进行曝光时,由X轴干涉计IF5、 Y轴干涉计IF3来管理晶片载台WST,的位置。 In this case, wafer stage WST, located in the positive region (first region) of the optical axis of projection optical system PL in the vicinity of the bottom position thereof when the wafer stage WST on the wafer is exposed by an X-axis interferometer IF5, Y axis interferometer IF3 to manage the position of the wafer stage WST, the. 以下,将由X轴干涉计IF5、 Y轴干涉计EF3的各测长轴所规定的坐标系统称为曝光坐标系统。 Hereinafter, the IF5 by X-axis interferometer, the coordinate system set in the Y axis interferometer measurement axes referred EF3 exposure coordinate system.

又,晶片载台WST,位于对准系统ALG的检测中心正下方的位置附近的区域(第二区域),要进行形成于其晶片载台WST,上的晶片的对准标记的检测,例如晶片对准等时,由X轴干涉计IF5、 Y轴干涉计IF4来管理晶片载台WST,的位置。 Further, when wafer stage WST, located in a region (second region) close to the position of the detection center of alignment system ALG directly below, to be formed thereon the wafer stage WST, wafer alignment mark is detected on, e.g. wafer when alignment, etc., by the X-axis interferometer IF5, Y-axis interferometer IF4 to manage the position of the wafer stage WST, the. 以下,将由X轴干涉计IF5、 Y轴干涉计IF4的各测长轴所^L定的坐标系统称为对准坐标系统。 Hereinafter, by the X-axis interferometer IF5, Y-axis interferometer IF4 measurement axes of the predetermined coordinate system ^ L alignment coordinate system referred to.

又,测量载台MST,,位于如图20所示的待机位置附近的区域时,由X 轴干涉计IF1、 Y轴干涉计IF2来管理测量载令MST,的位置。 Further, measurement stage MST ,, is located in a region near the standby position as shown in FIG. 20, the X-axis interferometer IF1, Y-axis interferometer IF2 order to manage the MST measurement stage, position. 以下,将由X 轴干涉计IF1、 Y轴干涉计IF2的各测长轴所规定的坐标系统称为等待坐标系统。 Hereinafter, the IF1 by X-axis interferometer, the coordinate system as defined in the Y-axis interferometer IF2 of the measurement axes of the coordinate system is called the wait.

X轴干涉计IF6,在晶片曝光结束后的晶片交换等时,测量相对于晶片载台WST'的X轴方向的位置。 X-axis interferometer IF6, when wafer exchange and the like after completion of exposure of the wafer, the measurement position with respect to X-axis direction of the wafer stage WST 'is.

如从上述说明可知,在本实施形态,X轴干涉计IF5、 IF1,是具有相对于X轴方向及Z轴方向离开的至少三支光轴的多轴干涉计,各光轴的输出值能独立测量。 As apparent from the above description, in the present embodiment, the X-axis interferometer IF5, IF1, having at least three with respect to the optical axis of the X-axis direction and the Z-axis direction away from the multi-axis interferometers, the output values ​​of each optical axis can be independent measurements. 因此,在所述X轴干涉计IF5、 IF1,除了晶片载台WST,、 测量载台MST,的X轴方向的位置测量以夕卜,也能测量Y轴周围的旋转量(横摇量)及Z轴周围的旋转量(偏摇量)。 Thus, in the X-axis interferometer IF5, IF1, except the position of wafer stage WST ,, the MST measurement stage, in the X-axis direction was measured in the evening Bu, can also be measured rotation amount around the Y axis (rolling amount) and the rotation amount around the Z-axis (yawing amount). 又,X轴干涉计IF6,也可多轴干涉计,也可光轴一支的干涉计。 And, X-axis interferometer IF6 can also be a multi-axis interferometer, an optical axis may be interferometer.

又,上述Y轴干涉计IF2、 IF3、 IF4,是具有相对于Z轴方向离开的各二支光轴的二轴干涉计,各光轴的输出值能独立测量。 Further, the Y-axis interferometer IF2, IF3, IF4, having a two-axis interferometer with respect to each of the two Z-axis direction away from the optical axis of the output values ​​of each optical axis can be measured independently. 因此,在所述Y轴干涉计IF2、 IF3、 IF4,除了晶片载台WST,或测量载台MST,的Y轴方向的位置测量以外,也能测量X轴周围的旋转量(俯仰量)。 Thus, the Y-axis interferometer IF2, IF3, IF4, in addition to the Y-axis position measurement of the wafer stage WST, the MST or measurement stage, the direction of rotation can also be measured amount (pitching amount) about the X axis.

以下,对使用本第四实施形态的曝光装置所具备的晶片载台WST,与测量载台MST,的并行处理动作,依图20〜图23B加以说明。 Hereinafter, a fourth exposure apparatus of the present embodiment includes the wafer stage WST, the MST and measurement stage, the parallel processing operation, will be described in accordance with FIG. 20~ FIG 23B. 又,以下的动作中,由主控制装置20,按照位于投影单元PU正下方的第一区域的载台的移动方向,如前述,进行液体供排系统32的液体供应装置5及液体回收装置6 的各阀的开闭控制,在投影光学系统PL的前端透镜91正下方持续填满水。 Further, the following operation, the main controller 20, according to the moving direction of the stage the first region is located directly below projection unit PU, as described above, the liquid supply and discharge system 32 of the liquid supply unit 5 and liquid recovery unit 6 opening and closing the valves control, directly under tip lens 91 of projection optical system PL is constantly filled with water. 但是,以下,为了凌^f吏说明容易了解,省略液体供应装置5及液体回收装置6相关的说明。 However, the following, in order Ling ^ f Official readily understood description, omitting the liquid supply unit 5 and liquid recovery unit 6 associated description.

在图20,表示将对晶片载台WST,上的晶片W的步进扫描方式的曝光, 与前述的第一实施形态同样进行的状态。 In FIG. 20, showing the wafer stage WST will, exposure by a step-scan method on wafer W, the state of the same for the first embodiment described above. 此时,测量载台MST,,在不与晶片载台WST,冲突的既定的待机位置等待。 At this point, the measuring stage MST ,, at a predetermined standby position to wait for the wafer stage WST does not, the conflict. 在此情形,主控制装置20,将测量载台MST,的位置在前述的等待坐标系统上管理,将晶片载台WST,的位置在前述的曝光坐标系统上管理。 In this case, the position, the main control unit 20, the measuring stage the MST, on the waiting coordinate system management, the wafer stage WST, the location management on the exposure coordinate system.

并且,在晶片载台WST,侧,在例如对1批(1批是25片或50片)的晶片W的曝光结束的阶段,主控制装置20, ^f吏测量载台MST,移动至图22A 所示的位置。 Further, the wafer stage WST, side, at the stage such as exposure of one lot (one lot is 25 or 50) of the wafer W is completed, main controller 20, ^ f official measurement stage the MST, moves to position shown in 22A. 在此图22A的状态,测量载台MST,与晶片载台WST,,如图21所示成为设置于晶片载台WST,的凸缘部llla的-X侧端面与测量载台MST,的段部lllb的-X侧面近接(或接触)的状态。 In the state of this FIG. 22A, the MST measurement stage, the wafer stage WST ,, the -X side shown in Figure 21 to become disposed in the end surface of the measured wafer stage WST, a flange portion llla of the MST stage, segments -X side surface portion lllb proximity (or contact) state.

在此,因将晶片载台WST,侧的凸缘部llla的X轴方向的宽度尺寸,比测量载台MST,侧的段部lllb的X轴方向的宽度尺寸设为大,故能防止使测量载台MST,的镜面加工端面(反射面)Sc与除晶片载台WST,的凸缘部llla外的-X侧端面(-X侧端面的凸缘部llla下方的部分)接触。 Here, because the wafer stage WST, the width dimension of the X-axis direction side of the flange portion llla, the MST ratio measurement stage, the width dimension of the X-axis direction of the section lllb portion side is large, it can be prevented that the measurement stage MST, a mirror-finished end surface (reflection surface) Sc of the -X side end surface of the flange portion except LLLA wafer stage WST, a (portion below the flange portion LLLA -X side end) of the contact.

其次,主控制装置20,边保持晶片载台WST,与测量载台MST,的X 轴方向的位置关系,边开始使两载台同时驱动于+X方向的动作。 Next, main controller 20 while holding the wafer stage WST, the MST and measurement stage, the positional relationship between the X-axis direction, the edge starts to simultaneously drive two stage operation in + X direction.

如上述,若由主控制装置20,使晶片载台WST,、测量载台MST,同时驱动,在图22A的状态,保持于投影单元PU的前端透镜91与晶片W之间的水,则伴随晶片载台WST,、测量载台MST,的+X侧移动,在晶片W—晶片载台WST,—测量载台MST,上係L序移动。 As described above, if the 20, the main control device wafer stage WST ,, the MST measurement stage, simultaneously driven, in the state of FIG. 22A, the water held in between the wafer W and tip lens 91 of projection unit PU, the accompanying wafer stage WST ,, the MST measurement stage, the + X side is moved in the wafer W- wafer stage WST, - measuring the MST stage, based on the movement sequence L. 又,上述的移动期间中,晶片载台WST,与测量载台MST,保持如图21所示的位置关系。 During the movement above, wafer stage WST, the MST and measurement stage, maintaining the positional relationship shown in FIG. 21. 在图22B,表示在上述的移动中途水(液浸区域)同时跨越存在于晶片载台WST,、测量栽台MST,上时的状态,即表示从晶片栽台WST,上将水供应于测量载台MST, 上之前的状态。 In 22B, the above represents the same time moving halfway across the water (the immersion area) present in the wafer stage WST ,, the MST measurement stage plant, the state, it means that the wafer stage WST plant, water is supplied to the measurement on stage MST, the previous state. 也在此状态晶片载台WST,与测量载台MST,是保持如图21 所示的位置关系。 Also in this state of the wafer stage WST, and measurement stage MST, 21 is held in the positional relationship shown in FIG. 在图21的状态,因晶片载台WST,的凸缘部llla的边缘与对向凸缘部llla的测量载台MST,的上面的边缘的间隙是维持于0.3mm 以下,故即使水移动于其间隙上,能防止水渗入其间隙。 In the state of FIG edge 21, because the wafer stage WST, and the flange portion llla of the gap measurement stage MST to the flange portion llla of the upper edge of 0.3mm or less is maintained, so even if the water moves in on the gap, the gap can prevent water infiltration. 在此情形,由将凸缘部llla的上面与测量载台MST,的上面分别形成为拨水性(与水的接触角度是80°以上),能更确实防止水渗入其间隙。 In this case, the measurement of the upper flange portion llla of the MST stage, formed as above repellent (contact angle to water is not less than 80 °), can be more reliably prevent water from entering the gap. 又,在此移动中,来自干涉计IF2的干涉计光束虽不照射至测量载台MST,的端面Sb,但因与此大约同时(其前或后)干涉计IF3的干涉计光束会照射至测量载台MST,的端面Sb, 故在其时点由主控制装置20执行干涉计IF3的重置。 Further, in this movement, although not irradiated from the interferometer beam interferometer IF2 meter to measure the MST stage, the end surface Sb, but approximately the same time with this (front or rear) interferometer beam interferometer IF3 will be irradiated to count measuring the end face of the MST Sb stage, and so the point of time at which the master control device 20 performs a reset of the interferometer IF3.

若从图22B的状态,进一步将晶片载台WST,、测量载台MST,同时朝十X方向既定距离驱动,如图23A所示,成为在测量载台MST,与前端透镜91之间保持水的状态。 When the state shown in FIG. 22B, further wafer stage WST ,, the MST measurement stage, while the predetermined distance driven in + X direction, as shown in FIG. 23A, the water becomes held in the MST measurement stage, and between tip lens 91 status.

其次,主控制装置20,与使晶片载台WST,驱动于+X方向及-Y方向并行,《吏测量载台MST,朝+X方向;^+Y方向驱动。 Next, the main controller 20, and the wafer stage WST, driven in the + X direction and the -Y direction parallel, "the MST official measurement stage, the + X direction; ^ + Y direction drive. 在此驱动期间,因在晶片载台WST,的端面Se,不再照射来自干涉计IF5的干涉计光束,而使干涉计IF6的干涉计光束照射,故主控制装置20,以两干涉计光束照射的状态,使用千涉计IF5的测量值,使干涉计IF6重置。 During this driving, because the wafer stage WST, the end face of Se, not irradiated from the interferometer beams of interferometer IF5, irradiating the interference light beam interferometer IF6 meter, so the main controller 20, a two-beam interferometer irradiation state, using the measured value of the intervention IF5 and the interferometer IF6 reset. 另一方面,因来自干涉计IF4 的干涉计光束会照射至测量载台MST,的端面Sb,故主控制装置20,在两干涉计光束照射的任一时点,使用干涉计IF3的测量值,使干涉计IF4重置。 On the other hand, because the end face Sb is irradiated from the interferometer interfering beams will IF4 meter to measure the MST stage, and therefore the main control unit 20, in the two interferometer beams irradiated any point, measured using an interferometer IF3 of meter values, so interferometer IF4 reset. 又,因在测量载台MST,的端面Sc,会照射来自干涉计IF5的干涉计光束, 故主控制装置20,则执行干涉计IF5的重置(或考虑干涉计IF1的测量值的重置)。 Further, since the MST in the measurement stage, the end surface Sc, the interferometer beams from the illumination will interferometer IF5, and therefore the main controller 20 resets the interferometer IF5 is executed (or reset to consider measured values ​​of the interferometers IF1 ).

如上述,形成如图23B所示的两载台的配置,即,晶片栽台WST,位于既定的晶片交换位置,并且测量载台MST,位于投影光学系统PL正下方。 As described above, two stage configuration is formed as shown in FIG 23B, i.e., the wafer stage WST plant, located in a predetermined wafer exchange position and measurement stage the MST, is located directly below projection optical system PL. 又,在晶片载台WST,,若干涉计IF4的干涉计光束不照射,由干涉计系统, 虽不能测量Y轴方向的位置,但可由未图标的线性编码器等来管理晶片载台WST,的Y位置。 Further, the wafer stage WST ,, interferometer IF4 if the beams of the interferometer, the interferometer system, although the Y-axis direction can not measure the position, not shown but can be a linear encoder or the like of wafer stage WST, Y position. 或也可追加晶片载台WST,还在晶片交换位置时能测量晶片载台WST'的Y轴方向的位置的干涉计。 May also be added or wafer stage WST, the interferometer can measure the position of the Y axis wafer stage WST 'direction also when wafer exchange position. 在图23B所示的状态,在晶片载台WST,侧进行晶片交换,与此并行,在测量载台MST,侧按照必要执行既定的测量。 In the state shown in FIG. 23B, the wafer stage WST, wafer exchange side, parallel with this, a predetermined measuring the MST measurement stage, side accordance necessary. 此测量,例如在标线片载台RST的标线片交换后将对准系统ALG 的基线测量,与上述第三实施形态同样执行。 This measure, for example, after the reticle stage RST, reticle exchange baseline measurement of alignment system ALG, is also performed with the above-described third embodiment. 在此情形,测量载台MST,的X轴方向的位置,比干涉计IF1较佳者为使用干涉计IF5来测量。 In this case, the MST measurement stage, the position of the X-axis direction, than the interferometers IF1 preferred are the measured using interferometer IF5. 由在晶片W的曝光中使用测量测量载台MST'的X轴方向的位置的千涉计IF5,边测量测量载台MST,的位置,边进行基线测量,能以高精度执行根据其基线(量) 的晶片W的对准(定位)。 By the use of measurement wafer W in the exposure stage MST 'intervention IF5 and the position of the X-axis direction while measuring the MST stage, position while baseline measurement can be performed with high accuracy according to their baseline ( aligned amount) of the wafer W (positioning).

又,与上述第三实施形态同样,与上述对准系统ALG的基线测量一起, 进行前述的标线片对准。 Further, similar to the third embodiment, the reticle is aligned with the baseline measurement of alignment system ALG described above together for the foregoing.

并且,在上述的两载台WST,、 MST,上的作业结束的阶段,主控制装置20,例如将测量载台MST,与晶片载台WST,,恢复为图23A的状态,边维持使晶片载台WST,与测量载台MST,近接(或接触)的状态,ii^XY面内驱动,与前述同样对交换后的晶片W进行晶片对准,即使用对准系统ALG 进行交换后的晶片W上的对准标记的检测,来算出晶片W上的多个照射区域的位置坐标。 Further, in the above-described two stage WST ,, MST, on the end of the operation phase, the main control unit 20, for example, the MST measurement stage, the wafer stage WST ,, restored to the state in FIG. 23A while maintaining the wafer stage WST, the MST and measurement stage, proximity (or contact) state, ii ^ driven in the XY plane, the same wafer W is aligned with the wafer exchange, i.e. the use of the wafer alignment system ALG exchange detecting the alignment marks on the W, calculates the position coordinates of a plurality of shot areas on the wafer W. 又,此晶片对准时的晶片载台WST,的位置管理,则在前述的对准坐标系统上管理。 Further, this wafer alignment of wafer stage WST, location management, the management on the alignment coordinate system.

其后,主控制装置20,边保持晶片载台WST,与测量载台MST,的X.轴方向的位置关系,边与前述者相反,将两载台WST,、 MST,向-X方向同时驱动,而使晶片载台WST,(晶片W)移动至投影光学系统PL的下方后, 将测量载台MST,退避至既定位置。 Positional relationship Thereafter, the main controller 20 while holding the wafer stage WST, the MST and measurement stage, in the axial direction X., opposite sides of the person, the two stage WST ,, MST, while the -X direction driving the wafer stage WST, (wafer W) moves downward after the projection optical system PL, the MST measurement stage, to a predetermined retracted position. 在此期间,也以与前述者相反的步骤进行千涉计系统的干涉计的重置等。 During this period, also with the reverse procedure by resetting the interferometers intervention gauge system and the like.

其后,主控制装置20,与上述各实施形态同样,对晶片W执行步进扫描方式的曝光动作,将标线片图案依序转印于晶片W上的多个照射区域。 Thereafter, the main controller 20, the same with the above embodiment, the exposure operation of wafer W is performed step-scan mode, the reticle pattern sequentially transferred to the plurality of shot areas on the wafer W.

又,在上述i兌明,测量动作,虽对进行基线测量的情形说明,但不限于此,与上述第三实施形态同样,也可进行照度测量、照度不均测量、空间像计测量等。 Further, in the above i out against, measurement operation, although the baseline measurement for the case described, but is not limited thereto, similarly to the above-described third embodiment, can also be illuminance measurement, irregular illuminance measurement, aerial image measurement and the like. 又与上述第三实施形态同样,不限于l批的曝光结束后,每于既定片数(例如l片)的晶片交换,也能按照必要执行各种的测量。 And similarly with the above-described third embodiment, after the exposure is not limited to l batches, each in a predetermined number (e.g., sheet l) wafer exchange sheet, various measurements can be performed according to need. 又,也可在测量载台MST,载置波面像差测量装置,使其测量动作,来测量投影光学系统PL的波面像差。 Further, also in the MST measurement stage, placing a wavefront aberration measuring apparatus, the measurement operation so as to measure the wavefront aberration of the projection optical system PL. 或,也可在测量载台MST,设置观察摄影机,来检查形成于投影光学系统PL的^象面侧的液浸区域的状态。 Or, you may be measured in the MST stage, set up observation cameras to check the status of the liquid immersion area ^ image formed on the surface side of the projection optical system PL.

又,使用对准系统ALG进行交换后的晶片W的对准标记的检测,不一定需^f吏晶片载台WST,与测量载台MST,边保持既定的近接状态边执行, 也可在两载台离开后开始对准标记的岸企测,也可以两载台近接状态进行一部分的对准标记的检测后,使两载台离开,来进行剩余的对准标记的检测。 Further, using alignment system ALG to detect the alignment marks of wafer W has been exchanged, need not necessarily ^ f Official wafer stage WST, the MST and measurement stage, while maintaining a predetermined proximity state performs edge, but also in two after half shore measured after leaving the beginning stage of the alignment mark, the stage may be two proximity state detecting portion of the alignment marks, so that the two stage away to detect the remaining alignment marks.

如以上所说明,依本第四实施形态,与第三实施形态同样,晶片载台WST,(或测量载台MST,),从位于供应液体(水)的投影光学系统PL正下方的第一区域的第一状态迁移至测量载台MST,位于第一区域的第二状态时,由载台驱动系统(包含晶片载台驱动部(80~87)来构成),使晶片载台WST,側的凸^部lllsa与测量栽台MST,的賴:部lllb成为卡合状态,由晶片载台WST,的上面与测量载台MST,的上面能实现全平面。 As described above, under this fourth embodiment, the same form of the third embodiment, the wafer stage WST, (or measurement stage the MST,), just below the projection optical system is positioned for supplying the liquid (water) a first PL a first state of the region to migrate to the MST measurement stage, in the second state when the first area, the stage drive system (including a wafer stage drive section (80 to 87) constitute) the wafer stage WST, side ^ convex portion lllsa the MST and measurement stage plant, Lai: lllb portion engaged state, the wafer stage WST, and measurement stage above the MST, above the whole plane can be achieved. 因此,在投影光学系统PL与其正下方的至少一载台(此载台,伴随移动从一载台转换为另一载台)之间以保持水(液体)的状态,不会从两载台的间隙使液体泄漏,能从一载台位于第一区域的笫一状态迁移至另一载台位于第一区域的笫二状态。 Thus, in the projection optical system PL thereto at least one stage directly below (in this stage, the other stage with the movement for the transition from a stage) to maintain the water (liquid) state between the two stage without clearance for leakage of liquid from a stage located in the first region Zi migrate to other stage is positioned in the first region of two great undertaking. 即,在晶片载台WST,側进行通过投影光学系统PL与水(液体) 的曝光动作后,至在测量载台MST,侧开始在投影光学系统PL正下方的测量为止期间,从晶片载台WST,与投影光学系统PL之间保持水的状态至在测量载台MST,与投影光学系统PL之间保持水的状态,不需要经过水的全回收,再供应等步骤,能使其迁移。 That is, after the wafer stage WST, the side exposure operation by projection optical system PL and the water (liquid) to the measuring stage the MST, side, during the positive until the measured below the projection optical system PL, the wafer stage WST, holding the water between projection optical system PL and the measuring stage in a state to the MST, holding the water between projection optical system PL and the state without going through the process of fully recovering the water and then supplying other steps, it can migrate. 又,使用测量载台MST,的测量结束后, 至使用晶片载台WST,开始曝光为止期间也同样。 Further, the MST using the measurement stage, after the end of the measurement, to the use of wafer stage WST, also during the exposure is started up.

因此,能使/人晶片载台WST,侧的曝光动作结束至测量载台MST,的测量动作开始为止的时间,及^J则量载台MST,侧的测量结束至晶片载台WST, 侧的曝光动作开始为止的时间缩短(即,维持于与非液浸曝光的通常的曝光装置(非液浸曝光装置)相同程度),能获得产能的提高。 Thus, make / person wafer stage WST, the exposure operation is completed to the side the MST measurement stage, the time until the start of measurement operation, and ^ J stage the amount of the MST, measured between the end side of the wafer stage WST, side until the start of exposure operation is shortened (i.e., maintained in an ordinary exposure apparatus (a non-immersion exposure apparatus) to the same extent as the non-immersion exposure), improve the production capacity can be obtained. 又,因在投影光学系统PL的像面侧,水(液体)持续存在,故能有效地防止前述的水紋(水痕)的产生。 Further, because the image plane side of the projection optical system PL, water (liquid) is persistent, it can effectively prevent water stains (water marks) of the foregoing.

又,在本第四实施形态,因在晶片载台WST,设置凸》彖部llla,将与此卡合的段部lllb设置于测量载台MST,,故即使在两载台所对向侧的投影光学系统PL的端面Sc设置反射面,不会产生障碍,能从晶片载台WST,与投影光学系统PL之间保持水的状态迁移至投影光学系统PL与测量载台MST, 之间保持水的状态(或其相反)。 Further, in the present fourth embodiment, because the wafer stage WST, convex "hog LLLA portion, this engagement the portion lllb section disposed on measurement stage MST ,, so that even in the opposite side of the two stage end surface of the projection optical system PL Sc reflective surface, no trouble, from wafer stage WST, the water is held between projection optical system PL and the state transition to the projection optical system PL and measurement stage the MST, holding water between state (or vice versa).

又,由液浸曝光,进行高解像度且比空气中大焦点深度的曝光,能将标线片R的图案精度良好地转印于晶片上,例如当作元件规格能实现70〜100nm程度的微细图案的转印。 Further, the liquid immersion exposure, and exposure with high resolution depth major focus than in the air, the accuracy of the pattern of reticle R can be transferred with good on the wafer, such as element size can be realized a fine degree of 70~100nm the transfer pattern.

又,在上速第四实施形态,虽对在晶片载台WST,侧设置凸缘部llla,在测量载台MST,侧设置具有段部lllb的突部lllc的情形说明,但本发明并不限于此,也可在晶片载台WST,设置具有段部的突部,在测量载台MST, 侧设置凸缘部。 Further, the speed in the fourth embodiment, although the pair of wafer stage WST, a flange portion LLLA side, the MST described measurement stage, side sections having a projecting portion lllc lllb portion of the case, but the present invention is not limited to this, and wafer stage WST, is provided having a portion projecting section portion, the MST measurement stage, the flange portion side. 又,在上述第四实施形态,虽对测量载台MST,的+X侧的端部以形成段部lllb于上端部的单一的突部形成的情形,加以说明,但是, 此是由于需务使其突部lllc的+X侧的端面Sc形成反射面而构成,不一定要构成如此。 Further, in the above-described fourth embodiment, although the measurement stage of the MST, the + X side end of the section to form a case where a single portion lllb formed in the upper end portion of the projecting portion, will be described, however, this is due to the required traffic it + X side end surface of the projecting portion lllc Sc form a reflection surface is configured, so not necessarily configured. 例如,若不需要形成反射面,相当于突部lllb的部分,则可在上端部形成隔着既定间隙卡合于凸缘部llla的段部,其它部分也可任何形状。 For example, if necessary to form a reflecting surface, a portion corresponding to the projecting portion lllb, segments can be formed via a predetermined gap portion engaging the flange portion at the upper end portion llla of the other portions may be any shape. 同样,晶片载台WST,侧只要在上端部设置凸缘部llla,其它部分的形状,也可为任何形状。 Similarly, the wafer stage WST, as long as the side of the flange portion is provided at the upper end portion llla, portions other shapes, may be any shape.

又,在上述第四实施形态,虽将凸缘部llla—体形成于晶片载台WST,, 但也可以从晶片载台WST,本体能装卸的板构件来形成凸缘部llla。 Further, in the above-described fourth embodiment, although the flange portion llla- formed in wafer stage WST ,, it may be from the wafer stage WST, the physical handling of the plate member to form a flange portion llla.

又,也可采用设置弹性密封构件的构成,以凸缘部llla与段部lllb卡合的状态,使在凸缘部llla与段部lllb之间介有弹性密封构件。 Also, configuration may also be provided an elastic sealing member, the flange portion in a state llla and lllb segment portion engages the elastic sealing member interposed between the flange portion and the segment portion llla lllb. 即,例如, 由在凸缘部llla的-X侧端部设置弹性密封构件,能完全防止晶片载台WST, 与测量栽台MST,之间的漏水。 That is, for example, by the elastic sealing member disposed on the -X side end portion of the flange portion llla of completely preventing water leakage between wafer stage WST, plant and measurement stage MST,. 又,由设置弹性密封构件,即使在晶片载台WST,与测量载台MST,会接触的情形,能减低其冲击。 Further, by the elastic sealing member is provided, even in the case wafer stage WST, the MST and measurement stage, come into contact, can reduce the impact. 当然,也可将弹性密封构件设置于测量载台MST,側,替代弹性密封构件,也可在晶片载台WST, 与测量载台MST,的至少一两载台对向的位置,施加拨水被膜。 Of course, also the elastic seal member is arranged at measurement stage the MST, side, instead of the elastic seal member can stage WST on the wafer, and the measurement stage the MST, at least twelve stage position to the applied water repellent coating.

又,在上述第四实施形态的载台的一方设置凸缘部,在另一方设置段部的概念,不仅两载台是测量载台与晶片载台的情形,在两载台均是晶片载台的情形,也能采用。 Further, the flange portion is provided on one stage of the fourth embodiment, the concept of segment portion provided on the other, is not only the two stage wafer stage and the measurement stage is the case, the two wafer stage are Taiwan situation, but also adopt.

即,例如,要采用如上述第一实施形态(参照图2)或第二实施形态(参照图12)的载台装置的构成的情形,因晶片载台WST1与晶片载台WST2 相对于X轴方向的位置关系不变,故如图24所示,能采用在一晶片载台的X轴方向一侧具备凸缘部llla,在另一晶片载台的X轴方向另一侧具备将段部lllb形成于其上端部的突部lllc的构成。 That is, for example, to the case of using the configuration as in the first embodiment (see FIG. 2) or the second embodiment of the stage apparatus (see FIG. 12), because wafer stage WST1 and wafer stage WST2 in the X-axis the positional relationship between the direction of change, it is shown in Figure 24, can be employed in the X-axis direction side of a wafer stage is provided with a flange portion LLLA, the segment portion is provided on the other side of the other wafer stage in the X-axis direction lllb formed thereon projecting portion constituting an upper portion of lllc. 又,例如,如图25A所示,若采用晶片载台WST1"、 WST2"相对于X轴方向的位置关系会变更的载台装置时,如图25B所示,需要采用使各晶片载台WST1"、 WST2",具备凸缘部与具有段部的突部的构成。 Furthermore, for example, as shown in FIG. 25A, if ", WST2" stage with respect to the X-axis direction means the positional relationship will change using wafer stage WST1, 25B, need each wafer stage WST1 ", WST2", includes a projecting portion constituting the flange portion and the segment portion having. 由采用如上述的构成,即使晶片载台WSTl"位于-X侧,晶片载台WST2"位于十X 侧的情形,或晶片载台\¥811"位于+X侧,晶片载台百3丁2"位于-X侧的情形,与前述第四实施形态同样,以防止漏水的状态,能从一晶片载台上水接触状态,迁移至另一晶片载台上7jc接触状态。 As the above-described configuration, even if the wafer stage WSTl "located on the -X side, the wafer stage WST2" is located in the + X side of the case, or the wafer stage \ ¥ 811 "located on the + X side of the wafer stage one hundred 3-butoxy 2 "located on the -X side of the case, and the same fourth embodiment, in order to prevent water leakage state, from a state of the wafer stage water contact, migrate to the other wafer stage 7jc contact state.

又,在上述各实施形态,保持于前端透镜91下的水,乂人一载台上移动至另一载台上时,也可在前端透镜91下保持着水,使水的供应与回收停止。 Further, in the above embodiment, the water held by the lens 91 at the front end, qe a person on a stage when the carrier moves to the other stage, the water can be kept at a front end of the lens 91, so that the supply of water is stopped and the recovery . 特另,〗,在由水的供应水的压力会升高的情形,因从两个载台的间隙容易漏水, 故较佳者为停止水的供应与回收。 Another Japanese,〗, in the case of water supplied by the water pressure will increase, because the gap tends to leak two stage, it is preferred by stopping the supply of water and recovery.

又,在上述各实施形态,虽液体是使用超纯水(水),但本发明当然并不限于此。 Further, in the above embodiment, although the liquid is ultra pure water (water), but the present invention is not limited to this. 液体,也可使用化学性稳定、照明用光IL的透过率高、安全的液体,例如使用氟系惰性液体。 Liquids, may also be used is chemically stable, high transmittance to illumination light IL and safe liquids, for example, fluorine-based inert liquid. 此氟系惰性液体,例如能使用Fluorinert (美国3M公司的商品名称)。 The fluorine-containing inert liquid, for example, can be used as Fluorinert (the brand name of 3M United States). 此氟系惰性液体,对冷却效果也良好。 The fluorine-containing inert liquid, the cooling effect is good. 又,液体, 也能使用对照明用光IL有透过性且折射率尽量高,又,对投影光学系统或涂布于晶片表面的光刻胶稳定(例如,洋杉油)。 Further, the liquid can also be used and have a refractive index as high as possible transmittance to illumination light IL, and, of the projection optical system or the photoresist coated on the wafer surface is stabilized (e.g., Cedar oil). 又,若使用F2激光作为光源时,液体能使用氟系液体(例如,丰布尔油(Fomblinoil))。 Further, if using F2 laser as a light source, a liquid fluorine-based liquid can be used (e.g., Feng Boolean oil (Fomblinoil)).

又,在上述各实施形态,也可将所回收的液体再利用,在此情形,较佳者为将用以从所回收的液体去除杂质的过滤器设置于液体回收装置或回收管等。 Further, in the foregoing embodiments can also be reused as the recovered liquid, in this case, will be used preferably for the removal of impurities by a filter provided in the liquid recovery unit, or the like from the liquid recovery pipe recovered.

又,在上述实施形态,虽投影光学系统PL的最像面侧的光学元件是前端透镜91,但该光学元件不限于透镜,也可为光学板(平行平面板等),用以调整投影光学系统PL的光学特性,例如像差(球面像差、彗形像差)的调整,也可简单的盖玻璃。 Further, in the above embodiment, although the projection optics most image plane side of the distal optical system PL is lens 91, but is not limited to the lens of the optical element, but may be an optical plate (parallel plane plate), for adjusting the projection optics the optical properties of system PL, for example, the aberration (spherical aberration, coma aberration) is adjusted, but also a simple cover glass. 投影光学系统PL的最像面侧的光学元件(在上述实施形态是前端透镜91),起因于由照明用光IL的照射从光刻胶所产生的飞散粒子或液体中的杂质的附着等,会与液体(在上述实施形态是水)接触,4吏其表面污染。 The optical element of projection optical system PL of the most image plane side (in the above embodiment is tip lens 91), the scattering due to impurities adhered to particles or liquid by the irradiation of illumination light IL is generated from the photoresist, and the like, It will be liquid (water in the above embodiments) contacting, surface contamination 4 officials. 因此,其光学元件,也可装卸(交换)自如地固定于镜. Thus, the optical element can also be detachably (exchange) rotatably fixed to the mirror.

筒40的最下部,定期交换。 Lowermost cylinder 40, a regular exchange.

如上述的情形,若接触于液体的光学元件是透镜,其交换构件的成本昂贵,且交换所需的时间变长,会导致维护成本(运转成本)的上升或产能的降低。 As the above-described case, if the contact of the liquid optical element is a lens, the cost of the exchange member is expensive, and the time required for exchange becomes long, will lead to lower maintenance costs increase (running cost) or capacity. 因此,接触于液体的光学元件,也可使用例如比前端透镜91廉价的平行平面板。 Thus, the optical element in contact with the liquid, may also be used, for example, an inexpensive lens 91 than the front end plane-parallel plate.

又,在上述各实施形态,使液体流动的范围可设为使覆盖标线片的图案像的投影区域(照明用光IL的照射区域)全域,其大小虽可任意,但,为了要控制流速、流量,较佳者为比照射区域稍微小,使其范围尽量缩小。 Further, in the above embodiment, the liquid flow that the scope of the covering can be set to the reticle pattern image projection area (irradiation area of ​​illumination light IL) global, although it can be any size, but, in order to control the flow rate flow rate, it is preferably slightly smaller than those irradiated regions, so as to minimize the range.

又,在上述各实施形态,虽对将本发明适用于步进扫描方式等的扫描型曝光装置的情形说明,但本发明的适用范围当然不限于此。 Further, in the foregoing embodiments, although the case of the present invention is applied to a step-like scanning type exposure apparatus described, but the scope of the present invention is of course not limited thereto. 即,也能合适地适用于步进重复方式的缩小投影曝光装置。 I.e., it can be suitably applied to a step and repeat reduction projection exposure apparatus of the embodiment.

曝光装置的用途并不限于半导体制造用的曝光装置,例如,能广泛地适用千用以将液晶显示元件图案转印于方型的玻璃板的液晶用曝光装置,或用以制造有机EL、薄膜磁头、摄影元件(CCD等)、微型机器、及DNA芯片等的曝光装置。 The use of the exposure apparatus is not limited to the exposure apparatus for manufacturing semiconductor, for example, one thousand of the liquid crystal can be widely applied to an exposure apparatus for liquid crystal display element pattern is transferred to the square of the glass sheet, or for the manufacture of the EL organic, film magnetic heads, imaging elements (CCD, etc.), micromachines, DNA chips or the like, and an exposure apparatus. 又,不仅是半导体元件等的微元件,供制造光曝光装置、 EUV曝光装置、X线曝光装置、及电子曝光装置等所使用的标线片或掩膜, 在玻璃基板或硅晶片等转印电路图案的曝光装置,也能适用本发明。 Further, not only a semiconductor element such as micro elements, the light exposure apparatus for manufacturing reticles or masks EUV exposure apparatus, X-ray exposure apparatus, and an electronic exposure apparatus is used, a glass substrate or a silicon wafer is transferred a circuit pattern exposure apparatus, the present invention can be applied.

又,在上迷各实施形态的曝光装置的光源,不限于ArF准分子激光源, 也能使用KrF准分子激光源、F2激光源等的脉冲激光源,或发出g线(波长436nm) 、 i线(波长365nm)等光线超压水银灯等。 Further, each of the embodiments in the above-light exposure apparatus is not limited to the ArF excimer laser light source, KrF excimer laser light can also be used source, F2 laser light source such as a pulsed laser source, or emits the g-line (wavelength 436nm), i line (wavelength 365nm) light and the like ultra-pressure mercury lamp and the like.

又,将DFB半导体激光或光纤激光所振荡的红外域,或可浮见域的单一波长激光,例如以掺杂铒(或铒与钇双方)的光纤放大器放大,而使用非线性光学结晶波长转换为紫外光的高谐波也可。 In addition, the DFB semiconductor laser or fiber laser oscillation infrared region, or a single-wavelength laser buoyant domain see, for example, doped with erbium (or both erbium and yttrium), and an optical fiber amplifier, the wavelength conversion using a nonlinear optical crystal ultraviolet light of a harmonic may be used. 又,投影光学系统的倍率, 不仅是縮小系统,也可为等倍及放大系统的任一种。 Further, the magnification of the projection optical system, not only a reduction system, but also may be any of a fold magnifying system. 元件制造方法: Device manufacturing method:

其次,对将上述实施形态的曝光装置在光刻步骤使用的元件制造方法的实施形态,加以说明。 Next, the embodiment of device manufacturing method of the above-described embodiment of the exposure apparatus used in a lithography step will be described.

在图26,表示元件(IC或LSI等半导体芯片、液晶面板、CCD、薄膜磁头、微型机器等)的制造例的流程图。 In FIG 26, a flow chart showing an example of manufacturing a device (a semiconductor chip such as IC or LSI, liquid crystal panel, CCD, thin film magnetic head, a micromachine, etc.). 如图26所示,首先,在步骤201 (设计步骤),进行元件的机能、性能设计(例如,半导体元件的电路设计等),进行用以实现该机能的图案设计。 26, first, in step 201 (design step), function and performance design of device (e.g., circuit design of semiconductor device) is performed to achieve energy aircraft designs. 接着,在步骤202 (掩膜制作步骤), 制作形成有所设计的电路图案的掩膜。 Next, in step 202 (mask manufacturing step), making a mask on which the designed circuit pattern. 另一方面,在步骤203 (晶片制造步骤),4吏用硅等材料制造晶片。 On the other hand, in step 203 (wafer manufacturing step), 4 officials silicon wafers and other materials.

其次,在步骤204 (晶片处理步骤),使用在步骤201〜步骤203所准备的掩膜与晶片,如后述,由光刻技术等在晶片上形成实际的电路等。 Next, in step 204 (wafer processing step), in step 203, step 201~ prepared mask and wafer, as described later, an actual circuit is formed by a photolithography technique on a wafer. 其次, 在步骤205 (元件组装步骤),使用在步骤204所处理的晶片进行元件组装。 Next, in step 205 (device assembly step), device assembly for use in a wafer processing step 204. 在此步骤205,按照需要,包含切割步骤、接合步骤、及封装步骤(芯片封入)等步骤。 In this step 205, as needed, the cutting step comprises the step of bonding step, and packaging step (chip encapsulation) and the like.

最后,在步骤206(检查步骤),进行在步骤205所制作的元件的动作确^人测试、耐久测试等的检查。 Finally, in step 206 (inspection step), the operation performed at step 205 produced the test element determines ^ people, and the like check the endurance test. 经过如上述的步骤后,元件则完成而出货。 After the above steps, the element is completed and shipped.

在图27,表示半导体元件的上述步骤204的详细流程例。 In FIG. 27, showing examples of the detailed flow of the step of the semiconductor element 204. 在图27,在步骤211 (氧化步骤)使晶片的表面氧化。 In FIG. 27, in step 211 (oxidation step) to oxidize the surface of the wafer. 在步骤212 (CVD步骤)在晶片表面形成绝缘膜。 Forming an insulating film on the wafer surface at step 212 (CVD step). 在步骤213 (电极形成步骤)在晶片上以蒸镀形成电极。 In step 213 (electrode formation step) to form an electrode deposited on the wafer. 在步骤214 (离子档人步骤)在晶片植入离子。 At step 214 (ion gear step al) the ion implantation in the wafer. 以上的步骤211〜步骤214, 分别构成晶片处理的各阶段之前处理步骤,按照各阶段所需要的处理选择来执行。 Step 211~ Step 214 above, before each stage constitute process wafer processing steps be performed in each stage selection process needs.

在晶片处理的各阶段,上述之前处理步骤结束后,执行后处理步骤如下。 In each stage of wafer processing, after completion of the previous process step, after executing the following processing steps. 在此后处理步骤,首先,在步骤215 (光刻月交形成步骤),在晶片涂布感光剂。 In the post-process, first, in step 215 (photolithography months post forming step), a photosensitive agent is coated on the wafer. 接着,在步骤216(曝光步骤),由如上所说明的曝光装置将掩膜的电路图案转印于晶片。 Next, in step 216 (exposure step), the exposure apparatus described above, the mask circuit pattern is transferred to the wafer. 其次,在步骤217 (显影步骤),使所曝光的晶片显影,在步骤218 (蚀刻步骤),将光刻胶所残留的部分以外的部分的露出构件以蚀刻去除。 Next, in step 217 (developing step), the exposed wafer is developed so, in step 218 (etching step), the exposed portion of the member other than the remaining portion of the photoresist is removed by etching. 并且,在步骤219 (光刻胶去除步骤),去除已完成蚀刻而变成不要的光刻胶。 Then, in step 219 (resist removing step), removing the etching has been completed becomes unnecessary photoresist.

由重复进行此等前处理步骤与后处理步骤,能在晶片上形成多层的电路图案。 Repeating step for such pre-processing and post processing steps, multilayer circuit patterns can be formed on the wafer.

使用以上所说明的本实施形态的元件制造方法,由在曝光步骤(步骤216)使用上述各实施形态的曝光装置以能量光束(照明用光IL)使晶片(基板)曝光,因在晶片上形成元件图案,故能长期间实现高产能且高精度的曝光。 Using the above described device manufacturing method according to the present embodiment, by the exposure device using the above embodiments in the exposure step (step 216) with an energy beam (illumination light IL) of the wafer (substrate) exposure, formed on a wafer by element pattern, it can achieve high throughput and high-precision exposure period long. 因此,能提高形成微细图案的高积体度的微元件的生产性。 Thus, productivity can be improved highly integrated micro device formed of the fine pattern.

如以上说明,本发明的载台驱动装置,适于驱动第一载台与第二载台。 As described above, the stage driving apparatus according to the present invention, adapted to drive the first stage and the second stage. 又,本发明的曝光装置,适于在投影光学系统与基板之间供应液体,通过投影光学系统与液体由能量光束使前逸基板曝光。 The exposure apparatus according to the present invention, adapted to supply a liquid between the projection optical system and the substrate through a projection optical system and the liquid by the energy beam so that the substrate before exposure Yi. 又,本发明的元件制造方法, 适于微元件的生产。 Further, the device manufacturing method of the present invention, suitable for the production of micro elements.

Claims (60)

1、一种载台驱动方法,其特征在于,所述方法是在包含有液体局部供应的二维面内的第一区域、与位于该第一区域的第一轴方向一侧的第二区域的既定范围区域内,独立驱动第一载台与第二载台,该方法包括下列步骤: 当从该第一、第二载台中的一载台位于该第一区域的第一状态,迁移至另一载台位于该第一区域的第二状态时,使该第一载台与第二载台,维持于与该第一轴方向交叉的第二轴方向上呈近接状态及接触状态的任一状态,并将该第一、第二载台朝该第二轴方向同时驱动。 A stage drive method of the carrier, wherein said method is comprising a first region within a two-dimensional plane of the liquid supplied locally, a first side of the axial direction at the first region and a second region region within a predetermined range, independently drives the first stage and the second stage, the method comprising the steps of: from the first, a second stage carrier stations in the first state of the first region, migrate to the another stage in the second state when the first region, so that the first stage and the second stage, was maintained nearly any contact state and a contact state to the second axis intersecting the first axis direction a state, and the first, second stage toward the second axis simultaneously driven.
2、 如权利要求1所述的栽台驱动方法,其特征在于: 所述迁移时,在位于该第一区域的载台上,将所述液体持续保持。 2. The method as claimed in stage drive planted in claim 1, wherein: said migration on a stage located in the first region, the liquid will continue to maintain.
3、 如权利要求1所述的载台驱动方法,其特征在于: 对所述第一、第二载台上的分别设置于该迁移时两载台近接或接触侧的面以外的面的第一、第二反射镜的反射面,分别照射测长光束,根据各测长光束自该第一、第二反射镜的反射面的反射光,来管理该第一、第二载台的位置。 3, stage drive method as claimed in claim 1, wherein: said first and second carrier are arranged outside the stage when the migration stage two proximity or in contact with the side surface of the first surface a second reflecting mirror surface, respectively, length-measuring beam is irradiated, in accordance with various measuring beam from the first reflecting surface of the second light reflecting mirror to manage the position of the first, the second stage.
4、 一种载台驱动方法,是在包含有液体局部供应的二维面内的第一区域、与位于该第一区域的第一轴方向一侧的第二区域的既定范围的区域内, 驱动第一载台;在包含该第一区域、与位于该第一区域的该第一轴方向的另一侧的第三区域的既定范围的区域内,驱动第二载台,其特征在于:当从该第一、第二载台中的一载台位于该第一区域的第一状态,迁移至另一载台位于该第一区域的第二状态时,使该第一载台与第二载台,维持与该第一轴方向呈近接状态及接触状态的任一状态,并将该第一、第二载台朝该第一轴方向同时驱动。 4. A carrier stage drive method, comprising in a first region in the two-dimensional plane of the liquid supplied locally within the area range of the second predetermined region of the first side of the axis at the first region, driving the first stage; including the first region, and the region within a predetermined range of the third area of ​​the other side of the first axis direction at the first region, a second driver stage, wherein: when in the first state of the first region from the first, a second stage carrier stations, moved to another stage in the second state of the first region, so that the first and the second stage stage, a state is maintained as a proximity state and any contact with the first axis, and the first and second stage axial direction toward the first driven simultaneously.
5、 如权利要求4所述的载台驱动方法,其特征在于: 所述迁移时,在位于该第一区域的载台上,将所述液体持续保持。 5, the stage drive method as claimed in claim 4, wherein: said migration on a stage located in the first region, the liquid will continue to maintain.
6、 如权利要求4所述的载台驱动方法,其特征在于:对该第一、第二载台上的分别设置于该迁移时两载台近接或接触侧的面以外的面的第一、第二反射镜的反射面,分别照射测长光束,根据各测长光束自该第一、第二反射镜的反射面的反射光,来管理该第一、第二载台的位置。 6, the stage drive method as claimed in claim 4, wherein: the first surface than the first surface, the second stage carrier mobility are disposed in the two stage proximity or contact side the second reflecting mirror surfaces, respectively, length-measuring beam is irradiated, in accordance with various measuring beam from the first reflecting surface of the second light reflecting mirror to manage the first, the position of the second stage.
7、 一种载台装置,其特征在于,所述载台装置包括:第一、第二载台,能在包含有液体局部供应的二维面内的第一区域、与位于该第一区域的第一轴方向一侧的第二区域的既定范围区域内独立驱动; 及控制装置,当从该第一、第二载台中的一载台位于该第一区域的第一状态,迁移至另一载台位于该第一区域的第二状态时,将该第一、第二载台控制成:使该第一载台与该第二载台,维持于与该第一轴方向交叉的第二轴方向上呈近接状态及接触状态的任一状态,且使该第一、第二载台朝该第二轴方向同时移动。 7. A stage device, wherein the carrier station apparatus comprising: a first, a second stage, comprising a first region capable of two-dimensional plane within the local liquid supply, the first region located independently driven within a predetermined range of the second area of ​​the side of a first axis; and a control device, when viewed from the first, a second stage carrier stations in the first state of the first region, migrate to the other when a stage is in the second state of the first region, the first, the second stage is controlled to: make the first stage and the second stage, in which section intersecting with the first axis a state near the form of any contact state and the contact state of the two-axis direction, and that the first, second stage toward the second axis while moving.
8、 一种载台装置,其特征在于具备:第一载台,能在包含有液体局部供应的二维面内的第一区域、与位于该第一区域的第一轴方向一侧的第二区域的既定范围的区域内移动;第二载台,能在包含该第一区域、与位于该第一区域的该第一轴方向的另一侧的第三区域的既定范围区域内移动;及控制装置,当从该第一、第二载台中的一载台位于该第一区域的第一状态,迁移至另一载台位于该第一区域的第二状态时,将该第一、第二载台控制成,维持与该第一轴方向呈近接状态及接触状态的任一状态,且使该第一、 第二载台朝该第一轴方向同时移动。 8. A stage apparatus characterized by comprising: a first stage, comprising a first region capable of two-dimensional plane within the local liquid supply side is located in the first axis direction of the first region of moves within a predetermined range of the area of ​​the two regions; a second stage, including the first region can move within a predetermined range of the region and a third region of the other side of the first axis of the first region; when the control means and, when viewed from the first, a second stage carrier stations in the first state of the first area, the migration to the second state of the other stage at the first region, the first, the second stage is controlled to maintain the form of a proximity state to any state, and the contact state with the first axis, and that the first, second stage toward the first axis while moving.
9、 一种曝光装置,是在投影光学系统与基板之间供应液体,通过该投影光学系统与该液体,由能量光束使该基板曝光,其特征在于具备:第一载台,能在包含待供应该液体的该投影光学系统正下方的第一区域、与位于该投影光学系统的第一轴方向一侧的第二区域的既定范围区域内移动;第二载台,能在包含该第一区域、与位于该投影光学系统的第一轴方向的另一侧的第三区域的区域内移动;载台驱动系统,使该第一、第二载台驱动,并且使从第一载台与第二载台的一载台位于该第一区域的第一状态迁移至第一载台与第二载台的另一载台位于该第一区域的第二状态时,该第一载台与第二载台,维持与该第一轴方向呈近接状态及接触状态的任一状态,并将该第一、第二载台朝该第一轴方向同时驱动;第一标记检测系统,配置于该第二区域上方,供检 9. An exposure apparatus that supplies a liquid between the projection optical system and the substrate through the projection optical system and the liquid, so that the energy beam exposing the substrate, the apparatus comprising: a first stage, can be contained in a first supply region of the projection optical system where the liquid is below the predetermined range within the movement area of ​​the second region side of the first axis direction of the projection optical system is located; the second stage, the first energy comprising region, the movement of the region of the third region of the other side of the first axial direction of the projection optical system is located; stage drive system that drives the first, second driver stage, and the first stage and from the second stage of a stage is in the first state of the first area migrates to a first stage and a second stage to another stage of the second state of the first area, the first stage and a second stage, a state is maintained as a proximity state and any contact with the first axis, and the first, second stage toward the first axis direction are simultaneously driven; a first mark detection system configured to the second upper region, for the subject 存在于该第一载台上的标记;及第二标记4企测系统,配置于该第三区域上方,供检测存在于该第二载台上的标记。 Present in the first stage of an indicia; half 4 and a second mark measuring system disposed above the third region, for detecting the presence of the marker in the second stage carrier.
10、 如权利要求9所述的曝光装置,其特征在于: 所述第一、第二载台都为能载置基板的载台。 10, exposure apparatus as claimed in claim 9, wherein: said first, second stage are to be placed the substrate stage.
11、 如权利要求9所述的曝光装置,其特征在于:该第一、第二载台中的一载台,其与另一载台对向侧的面一部分比其它部分突出,藉此设置板状的凸缘部;将隔着既定间隙卡合于该凸缘部的至少前端部的段部,设置于该另一载台的与该一载台对向侧的面的至少一部分,在该凸缘部与该段部卡合的状态下,该一载台上面的至少一部分与该另一载台上面的至少一部分,能形成既定大小的全平面。 11, exposure apparatus as claimed in claim 9, wherein: the first, a second stage carrier stations, protruding further than the other portions of the surface part of the stage laterally, whereby the plate is provided shaped flange portion; a predetermined gap therebetween at least a portion engaged with the segment portion of the at least a distal end portion of the flange portion is disposed on the other stage is a stage with the surface of the opposite side of the a state where the flange portion and the segment portion engaging at least a portion of the other stage above a stage at least a part of the above, the whole plane can be formed of a predetermined size.
12、 如权利要求9所述的曝光装置,其特征在于:各该第一、第二载台在第一轴方向一侧的上端部一部分比其它部分突出,藉此设置板状的凸缘部,并且在各载台的该第一轴方向的另一侧的面的至少一部分设置段部,其可隔着既定间隙卡合于另一载台的该凸缘部的至少前端部;在该第一载台与该第二载台的一载台的该凸缘部与该第一载台与该第二载台的另一载台的该段部卡合的状态下,该一载台上面的至少一部分与该另一载台上面的至少一部分,能形成既定大小的全平面。 12, exposure apparatus as claimed in claim 9, wherein: each of the first, upper portion of the side portion of the second stage in the first axis direction than the other projecting portion, whereby the plate-like flange portion and at least a portion of the surface of the step portion provided at the other side of the first axis direction of each stage of which at least the tip portion of the can via the flange portion is bonded to another stage of the predetermined clearance card; the the flange portion of the first carrier and the second stage is a stage in this stage of the state of the first carrier segment portion engaging the other stage and the second stage of the stage, a stage of the at least a portion of the upper stage to another at least a portion above the whole plane can be formed of a predetermined size.
13、 如权利要求9所述的曝光装置,其特征在于:该载台驱动系统,在该迁移时是维持使该第一载台与第二载台呈近接状态;在该第一载台与第二载台的至少一方设置抑制构件,由该迁移时使其位于该两载台的间隙,来防止该液体/人该间隙泄漏。 13, exposure apparatus as claimed in claim 9, wherein: the stage drive system, when the migration is maintained so that the first stage and the second stage are close together state; in the first stage and a second stage at least one inhibiting member is provided, to be located when the migration of the gap of the two stage, to prevent the liquid / person the gap leakage.
14、 如权利要求13所述的曝光装置,其特征在于: 该抑制构件,是包含密封构件及拨水被膜的至少一方。 14, exposure apparatus as claimed in claim 13, characterized in that: the inhibiting member, and a sealing member comprising at least one of the water-repellent film.
15、 如权利要求9所述的曝光装置,其特征在于:该迁移时,在该投影光学系统与位于该第一区域的载台之间,将该液体持续保持。 15, exposure apparatus as claimed in claim 9, wherein: when the migration between the projection optical system and the stage positioned in the first region, the liquid is continuously maintained.
16、 如权利要求9所述的曝光装置,其特征在于,进一步具备:第一、第二反射镜,分别设置于该第一、第二载台上的该迁移时两载台近接或接触侧的面以外的面;及干涉计,对该第一、第二反射镜的反射面分别照射测长光束,根据各测长光束自该第一、第二反射镜的反射面的反射光,来测量该第一、第二载台的位置。 16. The exposure apparatus according to claim 9, wherein, further comprising: a first, a second reflecting mirror, are disposed in the first, when the carrier mobility of the second stage of two stage proximity or contact side a surface other than the surface; and an interferometer, the first reflecting surface, a second reflection mirror, respectively, the length measurement beam is irradiated, the light beam from the first reflective surface reflecting light in accordance with the length measurement of each of the second mirror to the first measure, the position of the second stage.
17、 一种曝光装置,是在投影光学系统与基板之间供应液体,通过该投影光学系统与液体,由能量光束使该基板曝光,其特征在于具备:第一载台,能在包含供应该液体的该投影光学系统正下方的第一区域、 与位于该第一区域的第一轴方向一侧的第二区域的既定范围区域内移动,且能载置该基板;第二载台,能在包含该第一区域、与位于该第一区域的第一轴方向的另一侧的第三区域的区域内移动,且用于既定的测量;及载台驱动系统,使该第一、第二载台驱动,并且使从第一载台与第二载台的一载台位于该第一区域的第一状态迁移至第一载台与第二载台的另一载台位于该第一区域的第二状态时,使该第一载台与该第二载台,维持与该第一轴方向呈近接状态及接触状态的任一状态,并将该第一载台与第二载台朝该第一轴方向同时驱动。 17. An exposure apparatus that supplies a liquid between the projection optical system and the substrate through the projection optical system and the liquid, so that the energy beam exposing the substrate, the apparatus comprising: a first stage, which can supply comprising a first region of the projection optical system of the liquid directly below the second region within a predetermined range of a side of the first axis direction at the first region of the movement, capable of placing the substrate; a second stage, can including the first region, the movement of the inner region of the third region of the other side of the first axis of the first region, and intended for measurement; and a stage drive system that drives the first, second two driving stage, and the first region is located at the first state from a stage of the first stage and the second stage is moved to another stage of the first stage and the second stage is located in the first the second state of the region, so that the first stage and the second stage, a state is maintained as a proximity state and any contact with the first axis, and the first stage and the second stage toward the first axis direction are simultaneously driven.
18、 如权利要求17所述的曝光装置,其特征在于: 在该第二载台设置:通过该投影光学系统接收该能量光束的感测器的至少一部分、及形成有至少一个基准标记的基准标记板两者至少一方。 18, exposure apparatus as claimed in claim 17, wherein: in the second stage is provided: receives the energy beam via the projection optical system at least a portion, and formed at least one sensor with a reference mark of the reference at least one of the two marking plate.
19、 如权利要求17所述的曝光装置,其特征在于:该第二载台是用于测量,该测量使用通过该投影光学系统及液体的该能量光束的受光结果。 19. The exposure apparatus according to claim 17, wherein: the second stage is used to measure the results of measurements using light energy of the light beam passing through the projection optical system and the liquid.
20、 如权利要求17所述的曝光装置,其特征在于: 该载台驱动系统,由该能量光束使基板曝光时,根据使用该第二载台的测量结果的至少一部分,来驱动该第一载台。 20, exposure apparatus as claimed in claim 17, wherein: the stage drive system, the energy of the beam by the exposure of the substrate so that, in accordance with the measurement result using at least part of the second stage, driving the first stage.
21、 如权利要求20所述的曝光装置,其特征在于: 该载台驱动系统,在进行该第一载台上的基板交换期间,以执行使用该第二载台的测量的方式来驱动各载台。 To drive each of the stage drive system, the first period during which the substrate carrier exchange stage, to perform the measurement using the second stage manner: 21, exposure apparatus as claimed in claim 20, characterized in that stage.
22、 如权利要求17所述的曝光装置,其特征在于: 在该第二载台的与该第一载台对向侧的面的至少一部分,设置该第二载台的位置测量用的反射面。 22, exposure apparatus as claimed in claim 17, wherein: in the first stage at least a portion of the opposite side surface of the second stage, the position of the second reflective stage of the measurement surface.
23、 如权利要求17所述的曝光装置,其特征在于:该第一、第二载台中的一载台,将与另一载台对向侧的上端部一部分比其它部分突出,藉此设置板状的凸缘部;将隔着既定间隙卡合于该凸缘部的至少前端部的段部,设置于该另一载台的与该一载台对向侧的面的至少一部分,在该凸缘部与段部卡合的状态下,该一载台上面的至少一部分与该另一载台上面的至少一部分,能形成既定大小的全平面。 23, exposure apparatus as claimed in claim 17, wherein: the first, a second stage carrier stations, and the projecting portion than the other portion of another stage of the laterally upper portion, is provided whereby the like flange portion; at least a portion of the distal end section via the predetermined gap portion engaged with the flange portion disposed on the other stage and at least a portion of a surface of the opposite side of the stage, and in the state of the flange portion and the segment portion is engaged, at least part of the stage with the other of the at least a portion of an upper stage above the whole plane can be formed of a predetermined size.
24、 如权利要求17所述的曝光装置,其特征在于:各该第一、第二载台在第一轴方向一侧的上端部一部分比其它部分突出,藉此设置板状的凸缘部,并且在各载台的该第一轴方向的另一侧的面的至少一部分设置段部,其可隔着既定间隙卡合于另一载台的该凸缘部的至少前端部;在该第一载台与该第二载台的一载台的该凸缘部与该第一载台与该第二载台的另一载台的该段部卡合的状态下,该一载台上面的至少一部分与该另一载台上面的至少一部分,能形成既定大小的全平面。 24, exposure apparatus as claimed in claim 17, wherein: each of the first, upper portion of the side portion of the second stage in the first axis direction than the other projecting portion, whereby the plate-like flange portion and at least a portion of the surface of the step portion provided at the other side of the first axis direction of each stage of which at least the tip portion of the can via the flange portion is bonded to another stage of the predetermined clearance card; the the flange portion of the first carrier and the second stage is a stage in this stage of the state of the first carrier segment portion engaging the other stage and the second stage of the stage, a stage of the at least a portion of the upper stage to another at least a portion above the whole plane can be formed of a predetermined size.
25、 如权利要求17所述的曝光装置,其特征在于:该载台驱动系统,在该迁移时是维持使该第一载台与该第二载台呈近接状态;在该第一载台及第二载台的至少一方设置抑制构件,由该迁移时使其位于该两载台的间隙,来防止该液体从该间隙泄漏。 25, exposure apparatus as claimed in claim 17, wherein: the stage drive system, when the migration is maintained so that the first stage and the second stage are close together state; in the first stage and a second stage at least one inhibiting member is provided by a two stage to be located in the gap when the migration to prevent the liquid leakage from the gap.
26、 如权利要求25所述的曝光装置,其特征在于: 该抑制构件,是包含密封构件及拨水被膜的至少一方。 26, exposure apparatus as claimed in claim 25, characterized in that: the inhibiting member, and a sealing member comprising at least one of the water-repellent film.
27、 如权利要求17所述的曝光装置,其特征在于:该迁移时,在该投影光学系统与位于该第一区域的载台之间,将该液体持续保持。 27, exposure apparatus as claimed in claim 17, wherein: when the migration between the projection optical system and the stage positioned in the first region, the liquid is continuously maintained.
28、 如权利要求17所述的曝光装置,其特征在于,进一步具备: 第一、第二反射镜,分别设置于该第一、第二载台上的该迁移时两载台近才妄或接触侧的面以外的面;及干涉计,对该第一、第二反射镜的反射面分别照射测长光束,根据各测长光束自该第一、第二反射镜的反射面的反射光,来测量该第一、第二载台的位置。 28, exposure apparatus as claimed in claim 17, wherein, further comprising: a first, a second reflecting mirror, are disposed in the first, when the carrier mobility of the second stage two or stage jump only recently side surface other than the surface contact; and interferometers, respectively, the length measurement beam is irradiated a first reflecting surface, second mirror, from the first, light reflecting surface of the second reflecting mirror according to the respective measuring beam to measure the first position of the second stage is.
29、 一种曝光装置,其特征在于,所述曝光装置是在投影光学系统与基板之间供应液体,通过该投影光学系统与液体,使该基板曝光,所述曝光装置包括:第一载台,能在包含供应该液体的该投影光学系统正下方的第一区域、 与位于该第一区域的第一轴方向一侧的第二区域的既定范围区域内移动;第二载台,能在包含该第一区域与该第二区域的区域内,与该第一载台独立移动;及载台驱动系统,使该第一、第二载台驱动,并且使从第一载台与第二载台的一载台位于该第一区域的第一状态迁移至第一载台与第二载台的另一载台位于该第一区域的第二状态时,使该第一载台与该第二载台,维持于与该第一轴方向交叉的第二轴方向上呈近接状态及接触状态的任一状态,并将该第一、第二载台朝该第二轴方向同时驱动。 29. An exposure apparatus, characterized in that said exposure apparatus that supplies a liquid between the projection optical system and the substrate through the projection optical system and the liquid, so that the substrate is exposed, said exposure apparatus comprising: a first stage , can move within a predetermined range of the second area of ​​the side of the first axis direction at the first region in a first region of the projection optical system comprises a supply of the liquid directly below; the second stage, the energy including the first area, the first stage moves independently within the area of ​​the second region; and a stage drive system that drives the first, second driver stage, and the second from the first stage and a stage when the stage is in the first state of the first region to migrate to another carrier of the first stage and the second stage is in the second stage of the state of the first region, so that the first stage a second stage, maintained at a second axis intersecting the first axis direction was a proximity state to any state and a contact state, and the first, second stage toward the second axis simultaneously driven.
30、 如权利要求29所述的曝光装置,其特征在于: 该第一、第二载台,都为能载置基板的载台;且进一步具备标记检测系统,配置于该第二区域,供检测该第一及第二载台中位于其正下方的特定载台上所存在的标记。 30, exposure apparatus as claimed in claim 29, wherein: the first, second stage, are to be placed the substrate stage; and further comprising mark detecting system is disposed on the second region, for detecting the first and second stations on a stage-specific carrier is located directly beneath the present mark.
31、 如权利要求29所述的曝光装置,其特征在于:各该第一、第二载台在第一轴方向一侧的上端部一部分比其它部分突出,藉此设置板状的凸缘部,并且在各载台的该第一轴方向的另一侧面的至少一部分设置段部,其隔着既定间隙卡合于另一载台的该凸缘部的至少前端部;在该第一载台与该第二载台的一载台的该凸缘部与该第一载台与第二载台的另一载台的该段部卡合的状态下,该一载台上面的至少一部分与该另一载台上面的至少一部分,能形成既定大小的全平面。 31, exposure apparatus as claimed in claim 29, wherein: each of the first, upper portion of the side portion of the second stage in the first axis direction than the other projecting portion, whereby the plate-like flange portion and at least a portion of the step portion provided on the other side of the first axis of each stage, through which at least a distal portion of the flange portion is bonded to another stage of the predetermined clearance card; the first carrier the flange portion of a stage and the second stage to the lower stage of the first section of the carrier portion engaging state to another station and the second stage of the stage, at least a portion of the upper stage at least a portion of the other stage above the whole plane can be formed of a predetermined size.
32、 如权利要求29所述的曝光装置,其特征在于:该载台驱动系统,该迁移时是维持使该第一载台与第二载台呈近接状态;在该第一载台与该第二载台的至少一方设置抑制构件,由该迁移时使其位于该两载台的间隙,来防止该液体/人该间隙泄漏。 32. The exposure apparatus according to claim 29, wherein: the stage drive system, when the migration is maintained so that the first stage and the second stage are close together state; in the first stage with the a second stage at least one inhibiting member is provided, to be located when the migration of the gap of the two stage, to prevent the liquid / person the gap leakage.
33、 如权利要求32所述的曝光装置,其特征在于: 该抑制构件,是包含密封构件及拨水被膜的至少一方。 33, exposure apparatus as claimed in claim 32, characterized in that: the inhibiting member, and a sealing member comprising at least one of the water-repellent film.
34、 如权利要求29所述的曝光装置,其特征在于:该迁移时,在该投影光学系统与位于该第一区域的载台之间,将该液体持续保持。 34, exposure apparatus as claimed in claim 29, wherein: when the migration between the projection optical system and the stage positioned in the first region, the liquid is continuously maintained.
35、 如权利要求27所述的曝光装置,其特征在于,进一步具备: 第一、第二反射镜,分别设置于该第一、第二载台上的该迁移时两载台近接或接触侧的面以外的面;及干涉计,对该第一、第二反射镜的反射面分別照射测长光束,根据各测长光束自该第一、第二反射镜的反射面的反射光,来测量该第一、第二载台的位置。 35, an exposure apparatus as claimed in claim 27, wherein, further comprising: a first, a second reflecting mirror, are disposed in the first, when the carrier mobility of the second stage of two stage proximity or contact side a surface other than the surface; and an interferometer, the first reflecting surface, a second reflection mirror, respectively, the length measurement beam is irradiated, the light beam from the first reflective surface reflecting light in accordance with the length measurement of each of the second mirror to the first measure, the position of the second stage.
36、 一种曝光装置,是在投影光学系统与基板之间供应液体,通过该投影光学系统与该液体,使该基板曝光,其特征在于具备:第一载台,能在包含待供应该液体的该投影光学系统正下方的第一区域、及与该第一区域不同区域的区域内移动;第二载台,能在包含该第一区域、及与该第一区域不同区域的区域内, 与该第一载台独立移动;载台驱动系统,使该第一、第二载台驱动,并且使从第一载台与第二载台的一载台位于该第一区域的第一状态迁移至第一载台与第二载台的另一载台位于该第一区域的第二状态时,使该第一载台与该第二载台,维持与既定方向呈近接状态,并将该第一、第二载台朝该既定方向同时驱动;及抑制构件,设置于该第一载台及该第二载台的至少一方,从该第一状态迁移至该第二状态时其位于该两载台的间隙,藉此来防止该液 36. An exposure apparatus that supplies a liquid between the projection optical system and the substrate through the projection optical system and the liquid, so that the substrate is exposed, the apparatus comprising: a first stage, capable of containing liquid to be supplied to the the projection optical system is the region below the first, and the movement of different areas within the region of the first region; a second stage, the first region comprising the can, and an inner region of the first region different from the region, movable independently from the first stage; stage drive system that drives the first, second driver stage, and the first region is located at the first state from a stage of the first stage and the second stage is when moved to another stage of the first stage and the second stage is in the second state of the first region, so that the first stage and the second stage, to maintain the predetermined direction are close together state, and the first, second stage simultaneously driven in the predetermined direction; and when the inhibiting member is provided at least one of the first stage and the second stage of transition from the first state to the second state which is located the two stage gap, thereby preventing the liquid 体从该间隙泄 Vent body from the gap
37、 如权利要求36所述的曝光装置,其特征在于: 该抑制构件,是包含密封构件及拨水被膜的至少一方。 37, exposure apparatus as claimed in claim 36, characterized in that: the inhibiting member, and a sealing member comprising at least one of the water-repellent film.
38、 如权利要求36所述的曝光装置,其特征在于:该迁移时,在该投影光学系统与位于该第一区域的载台之间,将该液体持续保持。 38, exposure apparatus as claimed in claim 36, wherein: when the migration between the projection optical system and the stage positioned in the first region, the liquid is continuously maintained.
39、 如权利要求36所述的曝光装置,其特征在于,进一步具备: 第一、第二反射镜,分别设置于该第一、第二载台上的该迁移时两载台近接或接触侧的面以外的面;及干涉计,对该第一、第二反射镜的反射面分别照射测长光束,根据各测长光束自该第一、第二反射镜的反射面的反射光,来测量该第一、第二载台的位置。 39, exposure apparatus as claimed in claim 36, wherein, further comprising: a first, a second reflecting mirror, are disposed in the first, when the carrier mobility of the second stage of two stage proximity or contact side a surface other than the surface; and an interferometer, the first reflecting surface, a second reflection mirror, respectively, the length measurement beam is irradiated, the light beam from the first reflective surface reflecting light in accordance with the length measurement of each of the second mirror to the first measure, the position of the second stage.
40、 一种元件制造方法,其特征在于:是包含使用权利要求9至39中的任一项所述的曝光装置,以能量光束使基板曝光的光刻步骤。 40. A device manufacturing method, characterized by: comprising using the exposure apparatus as claimed in claim any one of claims 9 to 39, the photolithography step so that an energy beam exposure of the substrate.
41、 一种曝光装置,其在投影光学系统与基板之间供应液体,透过所述投影光学系统与所述液体,通过能量光束使所述基板曝光,其特征在于,该曝光装置包括:第一载台,用于载置基板;第二载台,设有所述能量光束射入的感测器的至少一部分;及载台驱动系统,用以移动所述第一载台及所述第二载台; 其中,从所述液体保持于该第一、第二载台其中一侧的载台与该投影光学系统之间的第一状态,转变成液体保持于另一侧的载台与该投影光学系统之间的第二状态的期间,是在该投影光学系统的像面侧保持液体。 41. An exposure apparatus that supplies the liquid between the projection optical system and the substrate through said projection optical system and the liquid, the energy of the beam passing through the substrate exposed, wherein the exposure apparatus comprising: a first a stage for mounting a substrate; a second stage, with at least a portion of the energy incident beam sensor; and a stage drive system for moving the first and the second stage stage two; wherein the liquid from the holding to the first stage the second stage of the first state in which one side between the projection optical system, into a liquid held in the other side of the stage during the second state between the projection optical system, the liquid is held on the image plane side of the projection optical system.
42、 如权利要求41所述的曝光装置,其特征在于,所述第二载台不保持基板。 42, said exposure apparatus as claimed in claim 41, wherein said second stage does not hold the substrate.
43、 如权利要求41所述的曝光装置,其特征在于,所述感测器进行波面测量。 43, said exposure apparatus as claimed in claim 41, wherein said sensor wavefront measurements.
44、 如权利要求41所述的曝光装置,其特征在于,所述感测器包含照度监视器。 44, said exposure apparatus as claimed in claim 41, wherein said sensor comprises an illuminance monitor.
45、 如权利要求41所述的曝光装置,其特征在于,所述感测器包含空间像测量器。 45, said exposure apparatus as claimed in claim 41, wherein said image sensor comprises a measuring space.
46、 如权利要求41所述的曝光装置,其特征在于,所述感测器包含照度不均感测器。 46, said exposure apparatus as claimed in claim 41, wherein said sensor comprises a sensor illuminance unevenness.
47、 如权利要求41所述的曝光装置,其特征在于,液体保持于所述第二载台与所述投影光学系统之间的状态下,所述第一载台移动至基板交换位置,与基板交换同时进行使用所述感测器的既定测量。 47. The exposure apparatus according to claim 41, wherein the liquid held in the state between the second stage and said projection optical system, the first stage is moved to the substrate exchange position, and simultaneously switching said substrate using a predetermined measurement sensor.
48、 如权利要求41所述的曝光装置,其特征在于,从所述第一状态转变成该第二状态的期间,所述一侧的载台与所述另一侧的载台, 一边维持与既定方向近接或接触的位置关系, 一边朝该既定方向移动。 48, said exposure apparatus as claimed in claim 41, characterized in that, during a transition from the first state to the second state, the stage and the other stage side one side, while maintaining the proximity to or in contact with the predetermined direction positional relationship, while moving toward the predetermined direction.
49、 如权利要求48所述的曝光装置,其特征在于,所述曝光装置进一步包含检测所述基板上的对准标记的对准系统;所述对准系统相对于所述投影光学系统在所述既定方向分离。 49, exposure apparatus as claimed in claim 48, wherein, said exposure apparatus further comprising detecting an alignment mark on the substrate alignment system; the alignment system relative to the projection optical system in the separating said predetermined direction.
50、 如权利要求48所述的曝光装置,其特征在于,在所述第一及第二载台的相对向的侧面分别施有拨水被膜。 50, exposure apparatus as claimed in claim 48, characterized in that the water-repellent film are respectively applied to the opposite sides of the first and the second stage.
51、 如权利要求41所述的曝光装置,其特征在于,所述曝光装置进一步包含:将液体供应至所述投影光学系统的像面侧的空间,且从该空间回收液体的系统。 51, exposure apparatus as claimed in claim 41, wherein, said exposure apparatus further comprising: supplying a liquid to a space of the projection optical system of the image side surface, and a liquid recovery system from the space.
52、 如权利要求51所述的曝光装置,其特征在于,从所述第一状态转变成所述第二状态的期间,停止液体的供应与回收。 52, exposure apparatus as claimed in claim 51, characterized in that, during a transition from the first state to the second state, stopping the supply of the liquid and recovered.
53、 一种元件制造方法,其特征在于,该方法包含: 在第一载台所保持的基板与投影光学系统之间保持液体; 透过所述投影光学系统与所述液体以能量光束使所述基板曝光; 在所述基板的曝光结束后, 一边在所述投影光学系统的像面侧保持液体,一边使设有该能量光束射入的感测器的至少一部分的第二载台与所述第一载台移动,形成液体保持于所述第二载台与所述投影光学系统之间的状态;在液体保持于所述第二载台与所述投影光学系统之间的状态下,使所述第一载台移动至基板交换位置;及使所述曝光后基板显影。 53. A device manufacturing method, wherein the method comprises: holding a liquid between the first carrier substrate table held by the projection optical system; transmitted through said projection optical system and the liquid to the energy of the beam exposing the substrate; after exposure of the substrate, while retaining the liquid on the image plane side of the projection optical system, while the energy is provided so that incident light beam sensor at least a portion of the second stage of the moving a first stage, forming a liquid held in the state between the second stage and the projection optical system; in the state of the liquid held between the second stage and the projection optical system, so that the first stage is moved to the substrate exchange position; and that the exposure of the substrate after development.
54、 如权利要求53所述的元件制造方法,其特征在于,所述方法进一步包含与所述基板交换位置的基板交换同时进行使用该感测器的既定测量的步骤。 54, the device manufacturing method as claimed in claim 53, wherein the method further comprises the step of using the predetermined measuring sensor while exchanging the substrate to the substrate exchange position.
55、 如权利要求54所述的元件制造方法,其特征在于,所述感测器进4亍波面测量。 55. The device manufacturing method according to claim 54, wherein said sensor 4 into the right foot wavefront measurement.
56、 如权利要求54所述的元件制造方法,其特征在于,所述感测器包含照度监视器。 56, device manufacturing method as claimed in claim 54, wherein said sensor comprises an illuminance monitor.
57、 如权利要求54所述的元件制造方法,其特征在于,所述感测器包含空间像测量器。 57, device manufacturing method as claimed in claim 54, wherein said image sensor comprises a measuring space.
58、 如权利要求54所述的元件制造方法,其特征在于,所述感测器包含照度不均感测器。 58, device manufacturing method as claimed in claim 54, wherein said sensor comprises a sensor illuminance unevenness.
59、 如权利要求53所述的元件制造方法,其特征在于,在所述基板的曝光结束后,所述第一载台与所述第二载台, 一边维持与既定方向近接或接触的位置关系, 一边朝所述既定方向移动。 59. The method of manufacturing a device as claimed in claim 53, wherein, after exposing the substrate, the first stage and the second stage, while maintaining the position of proximity to or in contact with the predetermined direction relationship, while moving toward the predetermined direction.
60、 如权利要求59所述的元件制造方法,其特征在于,该方法进一步包含在所述第一载台与所述第二载台朝所述既定方向移动时,将液体供应至所述投影光学系统像面侧空间的步骤。 60, device manufacturing method as claimed in claim 59, wherein the method further comprises when said first and said second stage moving stage toward the predetermined direction, the liquid supplied to the projection step side space of the image plane of the optical system.
CN 200580002269 2004-02-02 2005-01-27 Stage drive method and stage apparatus, exposure apparatus, and device producing method CN100552879C (en)

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US8711327B2 (en) 2007-12-14 2014-04-29 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US9176393B2 (en) 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
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