CN100547800C - Thin film transistor array substrate and electronic ink display device - Google Patents

Thin film transistor array substrate and electronic ink display device Download PDF

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CN100547800C
CN100547800C CN 200610149946 CN200610149946A CN100547800C CN 100547800 C CN100547800 C CN 100547800C CN 200610149946 CN200610149946 CN 200610149946 CN 200610149946 A CN200610149946 A CN 200610149946A CN 100547800 C CN100547800 C CN 100547800C
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thin film
film transistor
electronic ink
gate
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CN101165906A (en )
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吴淇铭
许育祯
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元太科技工业股份有限公司
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Abstract

本发明公开了一种薄膜晶体管阵列基板及电子墨水显示装置,该一种薄膜晶体管阵列基板,包括基板、多条扫描线、多条数据线以及多个像素。 The present invention discloses a thin film transistor array substrate and the electronic ink means that a thin film transistor array substrate, comprising a substrate, a plurality of scan lines, a plurality of data lines and a plurality of pixels. 其中,像素包括薄膜晶体管以及像素电极,而像素电极位于薄膜晶体管的上方并与其电性连接。 Wherein the pixel includes a thin film transistor and a pixel electrode, and a pixel electrode above the thin film transistor and electrically connected thereto. 薄膜晶体管包括第一栅极、第一绝缘层、半导体层、源极、漏极、第二绝缘层以及至少一第二栅极,其中,第二栅极配置于半导体层上方的第二绝缘层上,且第二栅极与第一栅极电性相连。 The thin film transistor includes a first gate, a first insulating layer, a semiconductor layer, a source, a drain, a second insulating layer and the second insulating layer at least a second gate, wherein the gate electrode is disposed above the second semiconductor layer, on, and a second gate electrode electrically connected to the first gate. 第二栅极能够减少经由薄膜晶体管的漏电流现象。 A second gate leakage current can be reduced via the thin film transistor phenomenon.

Description

薄膜晶体管阵列基板及电子墨水显示装置 The thin film transistor array substrate and electronic ink display device

技术领域 FIELD

本发明涉及一种阵列基板(array substrate)与显示装置(display device),且特别是有关于一种薄膜晶体管阵列基板(TFT array substrate) 与电子墨水显示装置(E-ink display device)。 The present invention relates to an array substrate (array substrate) with a display device (display device), and more particularly relates to a thin film transistor array substrate (TFT array substrate) and electronic ink display device (E-ink display device).

背景技术 Background technique

随着显示技术的快速发展,诸多新颖的显示装置不断地被开发出来,其中, 电子墨水显示装置具有低耗电、薄型化、长寿命、可挠曲等诸多优点,而极具发展的潜力。 With the rapid development of display technologies, a display device of the many novel constantly being developed, wherein the electronic ink display device having low power consumption, thin, long life, flexible and many other advantages, and great potential for development.

电子墨水显示装置最初发展于1970年代,其特色是包含许多带电荷的小球,其中球的一面是白色,另一面是黑色。 Electronic ink display apparatus originally developed in the 1970s, which features a number of beads comprising a charged, wherein the white side of the ball, the other side is black. 当电场改变时,球会上下转动,而呈现不同颜色。 When the electric field changes at the next ball rotation, while showing different colors. 第二代的电子墨水显示装置是发展于1990年代,其特色是以微胶囊(microcapsules)代替传统的小球,并且在微胶囊内填充彩色的油(oil) 与带电荷的白色颗粒。 The second generation of electronic ink display device is developed in the 1990s, which is characteristic of microcapsules (Microcapsules) instead of the conventional beads, and filled with colored oil (Oil) and white charged particles within the microcapsules. 经由外在电场的控制使白色颗粒往上或是往下移动,其中当白色颗粒往上(接近阅读者方向时)则显示出白色,当白色颗粒往下时(远离读者方向时)则显示出油的颜色。 Via the external electric field control so that the white particles move upward or downward, wherein when the white particles upward (a direction close to the reader) displays white, the white particles when downward (direction away from the reader) shows the color of the oil.

图1A为现有技术中的一种电子墨水显示装置的结构示意图。 FIG 1A is a schematic structural diagram of a display apparatus of a prior art electronic ink. 图IB为图1A中的电子墨水显示装置中的薄膜晶体管阵列基板的俯视图,其中图IA为沿图IB的A-A'线的剖面。 FIG. IB plan view of a thin film transistor array substrate of a display device in FIG. 1A electronic ink, IA to IB along the A-A 'line cross-section wherein FIG. 请同时参照图1A与图1B,电子墨水显示装置10包括薄膜晶体管阵列基板20及前面板30,而前面板30配置于薄膜晶体管阵列基板20的一侧。 Referring to FIGS. 1A and 1B, the electronic ink display device 10 includes a TFT array substrate 20 and a front panel 30 and the front panel 30 is arranged at one side of the TFT array substrate 20.

前面板30包括封盖32、透明电极层34以及电子墨水材料层36。 The front panel 30 comprises a cover 32, the transparent electrode layer 34 and the electronic ink material layer 36. 此电子墨水材料层36具有多个电子墨水微粒36a,并且电子墨水材料层36配置于透明电极层34与薄膜晶体管阵列基板20之间。 This electronic ink material layer 36 having a plurality of electronic ink particles 36a, and the electronic ink material layer 36 disposed between the transparent electrode layer 34 and the TFT array substrate 20.

薄膜晶体管阵列基板20包括基板21、多条扫描线22、多条数据线23、 多个薄膜晶体管24、介电层25以及多个像素电极26。 The TFT array substrate 20 includes a substrate 21, a plurality of scan lines 22, a plurality of data lines 23, a plurality of thin film transistors 24, the dielectric layer 25 and a plurality of pixel electrodes 26. 其中,扫描线22与数据线23将基板21定义出多个像素区域21a,而每一薄膜晶体管24位于对应的像素区域21a中,并与对应的扫描线22及数据线23电性相连。 Wherein, the scanning lines 22 and data lines 23 to the substrate 21 define a plurality of pixel regions 21a, each of the thin film transistor 24 is located in the region 21a corresponding to a pixel, and 23 are electrically connected to corresponding scanning line 22 and the data line. 由图1A可以看到薄膜晶体管24具有栅极24a、栅绝缘层24b、半导体层24c、源极24d 以及漏极24e。 1A can be seen from Figure 24 the thin film transistor having a gate electrode 24a, a gate insulating layer 24b, a semiconductor layer 24c, a source and a drain electrode 24d 24e. 由于薄膜為体管24只具有单一栅极24a且位于半导体层24c 下方,所以此薄膜晶体管24又称为底栅极薄膜晶体管(bottom gate TFT)。 Since the film is a single transistor having a gate electrode 24 positioned below the semiconductor layers 24a and 24c, so this TFT 24 is also called a bottom gate thin film transistor (bottom gate TFT).

请再参照图1A与图1B,介电层25覆盖上述的扫描线22、数据线23以及薄膜晶体管24,且介电层25具有开口H而暴露薄膜晶体管24的部份漏极24e。 Please exposed part of the thin film transistor 24 to the drain electrode 24e 1A and 1B, a dielectric layer 25 covering the scanning lines 22, data lines 23 and the thin film transistor 24, and the dielectric layer 25 has openings H. 像素电极26配置于介电层25上,且像素电极26通过开口H而与薄膜晶体管24电性连接。 The pixel electrode 26 is disposed on the dielectric layer 25, and the pixel electrode 26 is electrically connected to the thin film transistor 24 through the opening H. 如此一来,可通过扫描线22、数据线23与薄膜晶体管24而对像素电极26施加数据电压(data voltage)。 Thus, the 22, 23 and the data lines and the thin film transistor 24 applies a data voltage (data voltage) to the pixel electrode through the scanning line 26. 值得注意的是,为了达到最佳的开口率,像素电极26会设置在薄膜晶体管24的上方。 It is noted that, in order to achieve optimum aperture ratio of the pixel electrode 26 would be disposed above the thin film transistor 24.

承上述,当对像素电极26施加数据电压时,像素电极26与透明电极层34之间会形成电场,而驱动电子墨水材料层36中的墨水微粒36a。 Bearing the above, when a data voltage is applied to the pixel electrode 26, the pixel electrode 26 and between the transparent electrode layer 34 may form an electric field, the drive 36 and the electronic ink layer of the ink material particles 36a. 此外,在画面更新的过程中,对于非作动像素,会对其栅极24a与对应的扫描线22施加一低栅极电压信号(low gate voltage, Vgl),以使薄膜晶体管24处于关闭状态。 Further, in the process of updating the screen, pixels for non-actuated, exerts a low gate voltage signal (low gate voltage, Vgl) and its gate 24a corresponding to the scanning line 22, so that the thin film transistor 24 is turned off .

由上述可知,像素电极26是对应设置在薄膜晶体管24的上方,因此施加正数据电压时,像素电极26会扮演薄膜晶体管24的另一栅极。 When seen from the above, corresponding to the pixel electrode 26 is disposed above the thin film transistor 24, thus the positive data voltage is applied, the pixel electrode 26 will play another gate thin film transistor 24. 也就是说,像素电极26上的电荷所产生的电场将会诱导半导体层24c中的电荷重新分布, 导致在半导体层24c中产生通道。 That is, the charge on the electric field generated by the pixel electrode 26 will be induced in the semiconductor layer 24c charge redistribution, resulting in the semiconductor layer 24c in the channel. 如此,像素电极26上的电荷便会经由半导体层24c而泄漏,即产生漏电流现象。 Thus, the charge on the pixel electrode 26 will leak through the semiconductor layer 24c, i.e., a leakage current phenomenon. 所以,施加在像素电极26上的数据电压便无法稳定地维持,造成电子墨水显示装置10的显示质量劣化。 Therefore, the data voltage applied to the pixel electrode 26 can not be stably maintained, resulting in the quality of an electronic ink display device 10 is deteriorated.

发明内容 SUMMARY

本发明所要解决的技术问题在于提供一种能降低漏电流现象的薄膜晶体管阵列基板。 The present invention solves the technical problem is to provide a reduced leakage current phenomenon TFT array substrate.

本发明的另一目的是提供一种利用上述的薄膜晶体管阵列基板,而提升显. 示质量的电子墨水显示装置。 Another object of the present invention is to provide the above-described TFT array substrate utilizing, and significant upgrade. Quality shows electronic ink display device.

为实现上述或是其它目的,本发明提出一种薄膜晶体管阵列基板,其结构包括了基板、多条扫描线、多条数据线以及多个像素。 To achieve the above or other objects, the present invention provides a TFT array substrate, the structure comprising a substrate, a plurality of scan lines, a plurality of data lines and a plurality of pixels. 扫描线与数据线配置于 Scan lines and data lines arranged in

5基板上。 5 on the substrate. 每个像素电性连接至至少一扫瞄配线与至少一数据配线,而每一像素包括薄膜晶体管以及与薄膜晶体管电性连接的像素电极,且像素电极是位于薄膜晶体管的上方,其中薄膜晶体管包括第一栅极、第一绝缘层、半导体层、源极、漏极、第二绝缘层改及至少一第二栅极。 Each pixel is electrically connected to at least one of the at least one scanning line and the data lines, and each pixel includes a thin film transistor and a pixel electrode electrically connected to the thin film transistor, and the pixel electrode is located above the thin film transistor, wherein the thin film a first transistor including a gate, a first insulating layer, a semiconductor layer, a source, a drain, a second insulating layer and at least one second gate electrode changes. 第一栅极与对应的扫描线电性连接。 First gate and the corresponding scanning line is electrically connected. 第一绝缘层覆盖第一栅极。 A first insulating layer covering the first gate electrode. 半导体层配置于第一繩极土方的第一绝缘层上。 The semiconductor layer is disposed on the first electrode cord earthwork first insulating layer. 源极与漏极配置于半导体层上且部份覆盖半导体层,而源极与对应的数据线电性连接。 Source and drain electrodes disposed on the semiconductor layer and partially cover the semiconductor layer, the data line is electrically connected to the corresponding source. 第二绝缘层覆盖源极、漏极以及半导体层。 A second insulating layer covering the source electrode, the drain electrode and the semiconductor layer. 第二栅极配置于半导体层上方的第二绝缘层上,且第二栅极与第一栅极电性相连。 A second gate electrode disposed on the second insulating layer over the semiconductor layer, and a second gate electrode electrically connected to the first gate. 依照本发明一实施例所述的薄膜晶体管阵列基板,其中第一绝缘层与第二绝缘层具有一第一开口,此第一开口暴露部份第一栅极,以使第二栅极通过第一开口电性连接第一栅极。 In accordance with the thin film transistor array substrate according to an embodiment of the present invention, wherein the first insulating layer and the second insulating layer having a first opening, the first opening part exposing a first gate, a second gate electrode so that the first through the opening a gate electrically connected to the first. 依照本发明一实施例所述,薄膜晶体管阵列基板还包括多条共通导线,这些配置于基板上。 In accordance to an embodiment of the present invention, a thin film transistor array substrate further comprises a plurality of common wires, which are disposed on the substrate. 每一共通导线与扫描线平行,且位于相邻的两条扫描线之间。 Each scan line is parallel with the common lead, and located between two adjacent scanning lines. 依照本发明一实施例所述的薄膜晶体管阵列基板,其中像素电极的材质是选自于铟锡氧化物、铟锌氧化物、金属及其组合其中的一。 In accordance with the thin film transistor array substrate according to an embodiment of the present invention, wherein the pixel electrode is a material selected from indium tin oxide, indium zinc oxide, a metal, and a combination thereof. 本发明另提出一种电子墨水显示装置,其包括上述的的薄膜晶体管阵列基板,以及一前面板。 The present invention further provides an electronic ink display device comprising the above-described thin film transistor array substrate, and a front panel. 其中,前面板配置于薄膜晶体管阵列基板的一侧,且包括一封盖、 一透明电极层及一电子墨水材料层。 Wherein the front panel is disposed on one side of the thin film transistor array substrate, and comprising a cover, a transparent electrode layer and an electronic ink material layer. 透明电极层配置于封盖下方,而电子墨水材料层配置于透明电极层与薄膜晶体管阵列基板之间。 The transparent electrode layer is disposed on the bottom cover, and the electronic ink material layer disposed between the transparent electrode layer and the thin film transistor array substrate. 依照本发明一实施例所述的电子墨水显示装置,其中第一绝缘层与第二绝缘层具有一第一开口,第一开口暴露部份第一栅极,以使第二栅极通过第一开口电性连接第一栅极。 In accordance with an electronic ink according to an embodiment of the present invention, a display apparatus, wherein the first insulating layer and the second insulating layer having a first opening, the first opening part exposing a first gate, a second gate electrode so that the first electrically connected to the first gate opening. 依照本发明一实施例所述,电子墨水显示装置还包括多条共通导线,这些共通导线配置于基板上。 In accordance to an embodiment of the present invention, an electronic ink display apparatus further comprises a plurality of common wires, these wires are disposed on a common substrate. 每一共通导线与扫描线平行,且位于相邻的两条扫描线之间。 Each scan line is parallel with the common lead, and located between two adjacent scanning lines. 依照本发明一实施例所述的电子墨水显示装置,其中像素电极的材质是选自于铟锡氧化物、铟锌氧化物、金属及其组合其中之一。 In accordance with an electronic ink according to an embodiment of the present invention, a display device, wherein the pixel electrode is a material selected from indium tin oxide, indium zinc oxide, a metal and a combination thereof. 依照本发明一实施例所述的电子墨水显示装置,其中电子墨水材料层包括多个电子墨水粒子以及一透明流体。 In accordance with an electronic ink according to an embodiment of the present invention, a display apparatus, wherein the electronic ink material layer comprises a plurality of electronic ink particles and a transparent fluid. 依照本发明一实施例所述的电子墨水显示装置,上述的电子墨水粒子包括6多个暗色粒子与多个亮色粒子,其中,该些暗色粒子与亮色粒子分布于透明流体中,且各自带有不同的电性。 In accordance with an electronic ink according to an embodiment of the display device of the present invention, the electronic ink comprises a plurality of particles 6 bright dark particles and the plurality of particles, wherein the plurality of dark and bright particles are particles dispersed in a transparent fluid, and each having different electrical properties. 依照本发明一实施例所述的电子墨水显示装置,还包括多个微胶囊,上述的暗色粒子、亮色粒子与透明流体是被包围在微胶囊中。 In accordance with an electronic ink according to an embodiment of the present invention, the display apparatus further comprises a plurality of microcapsules, the above-described particle dark, bright particles are surrounded with the transparent fluid in a microcapsule. • •依照本发明一实施例所述的电子墨水显示装置,-还包括多个微凹槽v膽色-粒子、亮色粒子与透明流体是被置于微凹槽范围内。 • • electronic ink according to the present invention, according to an embodiment of the display device, - further comprising a plurality of micro-depressions v courage - particles, bright particles with the transparent fluid is disposed within microgrooves range. 依照本发明一实施例所述的电子墨水显示装置,其中电子墨水材料层包括多个电子墨水粒子,每一电子墨水粒子的一半边为亮色,另一半边为暗色,且各自带有不同的电性。 The electronic ink in accordance with the embodiment of the present invention, an embodiment of a display device, wherein the electronic ink material layer of particles comprising a plurality of electronic ink, electronic ink particles each half of a bright color, the other half dark color, and each with different electric sex. 本发明所提出的薄膜晶体管阵列基板上的薄膜晶体管,其具有第一栅极及与第一栅极电性连接的第二栅极,且第二栅极是设置在半导体层与像素电极之间。 The thin film transistor on the thin film transistor array substrate of the present invention is proposed, having a first gate and a second gate electrode electrically connected to the first gate, and the second gate electrode is disposed between the semiconductor layer and the pixel electrode . 所以,第二栅极可屏蔽像素电极上的电荷所产生的电场,使得半导体层中不会产生通道。 Therefore, the second gate can shield the electric field on the charges generated by the pixel electrode, a semiconductor layer such that the channel is not generated. 也就是说,薄膜晶体管的开关状态不会受到像素电极的影响, 进而能减少漏电流现象。 That is, the state of the switching thin film transistor is not affected by the pixel electrode, and further can reduce the leakage current phenomenon. 另外,即使像素电极完全对应像素区域的范围而设置在薄膜晶体管的上方,也不会影响薄膜晶体管的操作,进而能提升像素的开口率。 Further, even if the range of the pixel corresponding to the pixel electrode region is fully disposed above the thin film transistor, it will not affect the operation of the thin film transistor, and thus can improve the aperture ratio of the pixel. 此外,利用本发明所提出的薄膜晶体管阵列基板而制作的电子墨水显示装置将具有良好的显示质量。 Further, produced using a thin film transistor array substrate according to the present invention proposed an electronic ink display device having excellent display quality. 为让本发明的上述和其它目的、特征和优点能更明显易懂,下文特举较佳实施例,并配合所附图式,作详细说明如下。 To make the above and other objects, features and advantages of the present invention can be more fully understood by reading the following preferred embodiments and accompanying figures, described in detail below. 附图说明图1A为现有技术一种电子墨水显示装置的结构示意图; 图1B为图1A中的电子墨水显示装置中的薄膜晶体管阵列基板的俯视图, 其中图1A为沿图1B的A-A'线的剖面;图2A为本发明较佳实施例中一种薄膜晶体管阵列基板的俯视图; 图2B为沿图2A中的B-B'线的剖面示意图; 图2C为沿图图2A中的C-C'线的剖面示意图; 图3A为本发明较佳实施例中一种电子墨水显示装置的结构示意图; 图3B为为另一实施例的电子墨水显示装置的结构示意图。 1A is a schematic view of a display device as an electronic ink prior art; Fig. 1B a plan view of a thin film transistor array substrate of a display apparatus in FIG. 1A electronic ink, wherein FIG. 1A along A-A 1B of FIG. 'line cross-sectional view; FIG. 2A a plan view of the preferred embodiment of a thin film transistor array substrate of the present invention; FIG. 2B is a B-B direction in FIG. 2A' line cross-sectional view; FIG. 2C is a view of FIG. 2A along C-C 'line cross-sectional schematic diagram; FIG. 3A embodiment of the present invention, preferred embodiments schematic structural diagram of an electronic ink display device; FIG. 3B is a schematic view of an electronic ink display device according to another embodiment. 其中,附图标记:10、 200、 200a:电子墨水显示装置21、 110:基板22、 120:扫描线24、 142:薄膜晶体管24b:栅绝缘层24d、 142d:源极25、 150:介电层30、 300:前面板34、 320:透明电极层36a、 330a:电子墨水微粒142a:第一栅极142c:半导体层142g:第二栅极330a, -2:亮色粒子H:开口H2:第二开口L2:欧姆接触层20、 100:薄膜晶体管阵列基板21a、 110a:像素区域23、 130:数据线24a:栅极24c:半导体层24e、 142e:漏极26、 144:像素电极32、 310:封盖36、 330、 330,:电子墨水材料层140:像素142b:第一绝缘层142f:第二绝缘层160:共通导线330a, -1:暗色粒子330a, -3:透明流体HI:第一开口LI:通道层具体实施方式图2A为本发明较佳实施例中一种薄膜晶体管阵列基板的俯视图。 Wherein, reference numerals: 10, 200, 200a: electronic ink display device 21, 110: substrate 22, 120: scan lines 24, 142: thin film transistor 24b: gate insulating layer 24d, 142d: electrode 25, the source 150: Dielectric layer 30, 300: the front panel 34, 320: transparent electrode layer 36a, 330a: electronic ink particles 142a: a first gate electrode 142c: 142g semiconductor layer: a second gate electrode 330a, -2: bright particles H: opening H2: first second opening L2: the ohmic contact layer 20, 100: thin film transistor array substrate 21a, 110a: the pixel region 23, 130: data line 24a: gate 24c: semiconductor layer 24e, 142e: drain electrode 26, 144: pixel electrode 32, 310 : the closure 36, 330, 330 ,: electronic ink material layer 140: pixel 142b: a first insulating layer 142f: a second insulating layer 160: common wire 330a, -1: dark particles 330a, -3: the HI transparent liquid: first an opening LI: channel layer DETAILED DESCRIPTION Figure 2A is a top view of a preferred embodiment of the invention, a thin film transistor array substrate. 图2B 为沿图2A中的B-B'线的剖面示意图。 FIG 2B is a schematic cross-sectional view along B-B of FIG. 2A 'line. 图2C为沿图2A中的C-C'线的剖面示意图。 2C is a schematic cross-sectional view of FIG. 2A along C-C 'line. 先共同参照图2A与图2B,薄膜晶体管阵列基板IOO包括基板IIO、多条扫描线120、多条数据线130以及多个像素140。 Referring collectively to FIGS. 2A and 2B, the TFT array substrate IOO the IIO includes a substrate, a plurality of scanning lines 120, a plurality of data lines 130 and a plurality of pixels 140. 其中,扫描线120与数据线130配置于基板110上。 Wherein the scan lines 120 and data lines 130 arranged on the substrate 110. 像素140电性连接至相对应的扫描线120与相对应的数据线130,而像素140包括薄膜晶体管142以及与薄膜晶体管142电性连接的像素电极144,且像素电极144是位于薄膜晶体管142的上方。 140 electrically pixels connected to the corresponding scanning line 120 and data line 130 corresponding to the pixel 140 includes a thin film transistor 142 and a pixel electrode connected 142 electrically thin film transistor 144, and the pixel electrode 144 is located on the thin film transistor 142 above. 薄膜晶体管142包括第一栅极142a、第一绝缘层142b、半导体层142c、源极142d、漏极142e、第二绝缘层142f以及至少一第二栅极142g。 The thin film transistor 142 includes a first gate electrode 142a, a first insulating layer 142b, a semiconductor layer 142c, the source electrode 142d, the drain electrode 142e, 142f of the second insulating layer and at least one second gate electrode 142g. 第一栅极142a与对应的扫描线120电性连接。 A first gate electrode 120 is electrically 142a is connected to the corresponding scanning line. 第一绝缘层142b覆盖第一栅极142a。 A first insulating layer 142b covering the first gate electrode 142a. 半导体层142c 配置于第一栅极142a上方的第一绝缘层142b上。 The semiconductor layer 142c disposed on the first insulating layer over the first gate electrode 142b 142a. 源极142d与漏极142e配置于半导体层142c上且部份覆盖半导体层142c,而源极142d与对应的数据线130电性连接。 The source and the drain 142d 142e disposed on the semiconductor layer partially cover the semiconductor layer 142c and 142c, 142d and the source electrode 130 is electrically connected to the corresponding data line. 第二绝缘层142f覆盖源极142d、漏极T42e以及半导体层142c。 142f of the second insulating layer covering the source electrode 142d, the drain electrode and the semiconductor layer T42e 142c. 第二栅极142g配置于半导体层142c上方的第二绝缘层142f上,且第二栅极142g与第一栅极142a电性相连。 A second gate electrode 142g is disposed on the second insulating layer over the semiconductor layer 142f 142c, 142g and the second gate electrode 142a is electrically connected to the first gate. 值得注意的是,此薄膜晶体管142具有第一栅极142a以及第二栅极142g, 第二栅极142g位于半导体层142c与像素电极144之间,且第二栅极142g是与第一栅极142a电性相连。 Notably, this thin film transistor 142 having a first gate electrode 142a and the second gate 142g, 142g is located between the gate electrode of the second semiconductor layer 144 and the pixel electrode 142c, and the second gate electrode with the first gate electrode 142g 142a are electrically connected. 关于使第一栅极142a与第二栅极142g电性相连的方式,举例如下。 Gate 142a on the first embodiment and a second gate electrode 142g is electrically connected, for example as follows. 请共同参照图2A与图2C,在一实施例中,薄膜晶体管142的第一绝缘层142b与第二绝缘层142f具有一第一开口Hl。 Please jointly refer to FIG. 2A and 2C, in one embodiment, the thin film transistors of the first insulating layer 142b and the second insulating layer 142f 142 having a first opening Hl. 此第一开口HI暴露出部份的第一栅极142a。 This exposes a first portion of the first opening HI gate 142a. 在此情况下,第二栅极142g即可以通过第一开口HI电性连接第一栅极142a。 In this case, the second gate electrode through the first opening 142g HI i.e., electrically connected to the first gate electrode 142a. 当然,本发明并不限定于上述的方式,也可以利用其它适当方式电性连接第一栅极142a与第二栅极142g。 Of course, the present invention is not limited to the above embodiment, it may also be used other suitable means electrically connected to the first gate electrode 142a and the second gate 142g. 由图2B中所示,当对第一栅极142a施加电压而导通薄膜晶体管142时, 同时在第二栅极142g上也施加了与第一栅极142a相同的电压。 A shown in FIG. 2B, when a voltage is applied to the first gate electrode 142a is turned on when the thin film transistor 142, while on the second gate 142g is also applied to the same voltage as the first gate electrode 142a. 承上述,当薄膜晶体管142开启而使像素电极144施加有正数据电压时,由于第二栅极142g 是配置在半导体层142c与像素电极144之间,所以由像素电极144上的电荷所产生的电场将会被第二栅极142g所屏蔽,也就不会使得半导体层142c产生通道而产生漏电流现象。 When the above-mentioned bearing, the thin film transistor 142 is turned on when the pixel electrode 144 applied with the data voltage is positive, since the second gate electrode 142g is disposed between the semiconductor layer 144 and the pixel electrode 142c, so that the charge on the pixel electrode 144 generated a second electric field would be shielded by the gate electrode 142g, so that the semiconductor layer 142c will not produce a leakage current phenomenon passage. 换句话说,薄膜晶体管142的开关状态不会受到像素电极144的影响,而只与施加于第一栅极142a的电压信号有关。 In other words, the switching state of the thin film transistor 142 is not affected by the pixel electrode 144, but only on the voltage signal is applied to the first gate electrode 142a. 相较于现有技术而言,本发明中的半导体层142c不会受像素电极144的影响而产生通道,所以像素电极144上的电荷便不会经由半导体层142c而泄漏。 Compared to the prior art, the present invention is the semiconductor layer 142c is not generated channel affected by the pixel electrode 144, the charge on the pixel electrodes 144 will not leak through the semiconductor layer 142c. 换言之,薄膜晶体管阵列基板100可减少漏电流的现象发生,使像素电极144上所施加的数据电压可保持较长的时间。 In other words, the thin film transistor array substrate 100 can reduce the leakage current occurs, so that the data voltages applied to the pixel electrode 144 may be maintained for a longer time. 另外,由于薄膜晶体管142是双栅极结构,所以即使像素电极144完全对应像素区域110a的范围而设置,像素电极144也不会影响薄膜晶体管142的开关状态。 Further, since the thin film transistor 142 is a double gate structure, even if the pixel electrode 144 correspond exactly to the range of the pixel region 110a is provided, the pixel electrodes 144 will not affect the switching state of the thin film transistor 142. 如此一来,将可以提升各个像素140的开口率及显示面积。 As a result, we can improve the aperture ratio of each pixel and the display area 140. 请继续参照图2A,在一实施例中,基板110的材料例如为玻璃、石英或其它适当材料。 Still referring to Figure 2A, in one embodiment, the material of the substrate 110, for example, glass, quartz or other suitable material. 扫描线120与数据线130的材料可为金属、合金,或是其它适当的导电材料。 Material of the scanning lines 120 and the data line 130 may be a metal, an alloy, or other suitable conductive material. 在较佳实施例中,第一栅极142a与扫描线120是相同的膜层。 In the preferred embodiment, the first gate electrode 142a and the scan lines 120 are the same layer. 第一绝缘层142b与第二绝缘层142f的材质可为氧化硅、氮化硅、氮氧化硅或其它适当的介电材料。 A first insulating layer 142b and the second insulating layer 142f may be a material of silicon oxide, silicon nitride, silicon oxide or other suitable dielectric material. 半导体层142c的材质可为非晶硅、多晶硅或其它适当的半导体材质。 The semiconductor layer 142c may be made of amorphous silicon, polysilicon, or other suitable semiconductor material. 在一实施例中,半导体层142c包括一通道层Ll与一欧姆接触层L2, 欧姆接触层L2配置于信道层L1、源极142d以及漏极142e之间,且欧姆接触层L2的材料可为经掺杂的非晶硅。 In one embodiment, the semiconductor layer 142c includes a channel layer and an ohmic contact layer Ll L2, L2 ohmic contact layer disposed on the channel layer L1, between the drain and source electrode 142d 142e, and an ohmic contact layer material may be L2 doped amorphous silicon. 源极142d与漏极142e的材质例如为铬、 铝合金或是其它适当导电材料,且源极142d、漏极142e与数据线130是相同的膜层。 The source and drain 142d 142e material, for example, chromium, aluminum alloy or other suitable conductive material, and a source electrode 142d, 142e and the drain line 130 is the same as the data layer. 第二栅极142g为金属、合金或是其它适当导电材料。 A second gate electrode 142g is a metal, alloy or other suitable conductive material. 像素电极144 的材质可为铟锡氧化物(indium tin oxide, IT0)、铟锌氧化物(indium zinc oxide, IZ0)、金属、上述材料组合之一或是其它适当的导电材料。 The material of the pixel electrode 144 may be indium tin oxide (indium tin oxide, IT0), indium zinc oxide (indium zinc oxide, IZ0), a metal, a combination of one of the above materials or other suitable conductive material. 另外,为了提升各像素电极144保持数据电压的效能,在一实施例中,如图2A所绘示的薄膜晶体管阵列基板100可以包括多条共通导线160,这些共通导线160配置于基板110上,每一共通导线160与扫描线120平行,且位于相邻两扫描线120之间。 Further, each pixel electrode 144 in order to enhance the effectiveness of the data holding voltage, in one embodiment, 2A depicted in FIG TFT array substrate 100 may include a plurality of common wires 160, the wires 160 disposed on a common substrate 110, each common wire 160 in parallel with the scan lines 120, 120 and located between two adjacent scan lines. 更详细而言,每一像素电极144与位于此像素电极144下方的共通导线160构成储存电容(storage capacitor),而使施加在各像素电极144上的数据电压得以更加稳定,进一步使得各像素140获得更佳的显示效果。 More specifically, each of the pixel electrodes 144 constituting a storage capacitor (storage capacitor) located below the pixel electrode 144 of this common lead 160, the data voltage applied to each pixel electrode 144 is more stable, such that each pixel is further 140 for better display. 但是,在其它实施例中,薄膜晶体管阵列基板也可以不具共通导线, 端视需求而定。 However, in other embodiments, the thin film transistor array substrate having the common wires may not, depending on demand end. 综上所述,在本发明的薄膜晶体管阵列基板100中,其薄膜晶体管142 是双栅极结构。 In summary, the present invention thin film transistor array substrate 100, a thin film transistor 142 which is a double-gate structure. 由于设置于半导体层142c与像素电极144间的第二栅极142g 可屏蔽像素电极144上的电荷所产生的电场。 Since the second gate 142g is provided between the semiconductor layer 144 and the pixel electrode 142c can shield the electric field on the charges generated by the pixel electrode 144. 所以,半导体层142c不会受像素电极144的影响而产生通道。 Therefore, the semiconductor layer 142c does not affect the pixel electrode 144 generated by the channel. 也就是说,像素电极144上的电荷不会在薄膜晶体管142设定关闭时经由半导体层142c而泄漏出。 That is, the charge on the pixel electrode 144 does not leak out of the closed via a thin film transistor 142c of the semiconductor layer 142 is set. 所以,本发明的薄膜晶体管阵列基板100将具有下列优点:可减少漏电流的现象发生,像素电极144 上所施加的电压可因此更加稳定,且能提升各个像素140的开口率及显示面积。 Therefore, the thin film transistor array substrate 100 of the present invention has the following advantages: reduces the leakage current occurs, the voltage on the pixel electrode 144 thus applied may be more stable, and can improve the aperture ratio of each pixel and the display area 140. 上述的薄膜晶体管阵列基板100可用于组成一电子墨水显示装置。 Said thin film transistor array substrate 100 may be used to form an electronic ink display device. 图3A 为本发明较佳实施例中一种电子墨水显示装置的结构示意图。 FIG 3A a schematic view of one preferred embodiment of the structure of the electronic ink display device of the present invention. 由图3A所示,电子墨水显示装置200包括上述的薄膜晶体管阵列基板100以及前面板300, 而前面板300配置于薄膜晶体管阵列基板100的一侧,且前面板300包括一封盖310、 一透明电极层320与一电子墨水材料层330。 As shown in FIG. 3A, the electronic ink display device 200 includes the above-described TFT array substrate 100 and a front panel 300 and the front panel 300 is arranged on the side of the TFT array substrate 100 and the front panel 300 includes a cover 310, a a transparent electrode layer 320 and the electronic ink material layer 330. 透明电极层320配置于封盖310下方,而电子墨水材料层330则配置于透明电极层32d与薄膜晶体管阵列基板100之间。 The transparent electrode layer 320 disposed below the cover 310, the electronic ink material layer 330 disposed between the transparent electrode layer 32d and the TFT array substrate 100. -•关于薄膜晶体管阵列基板100的各个构件已经如上所述,在此不予以重述。 - • each member on the TFT array substrate 100 has been described above, it will not be repeated here. 值得注意的是,如图3A所为的电子墨水显示装置200具有上述的薄膜晶体管阵列基板100,特别是其中的薄膜晶体管142具有双栅极结构。 Notably, in FIG. 3A as electronic ink display device 200 having the above-described TFT array substrate 100, in particular a thin film transistor 142 has a double gate structure. 因此,设置于半导体层142c与像素电极144间的第二栅极142g可屏蔽像素电极144 上的电荷所产生的电场,使得半导体层142c不会受像素电极144的影响而产生通道。 Accordingly, the gate 142g is provided between the second semiconductor layer 144 and the pixel electrode 142c can shield the electric field on the charges generated by the pixel electrode 144, so that the semiconductor layer 142c is not generated channel affected by the pixel electrode 144. 也就是说,像素电极144上的电荷不会在薄膜晶体管142设定关闭时经由半导体层142c泄漏出去,因此可减少漏电流的现象。 That is, the charge on the pixel electrode 144 does not leak out when closing the thin film transistor via the semiconductor layer 142c 142 is set, thus reducing the leakage current phenomenon. 由于漏电流的现象减少,像素电极144上所施加的电压将可保持较长的时间,而使各个像素能够稳定地显示。 Phenomenon due to reduced leakage current, the voltage applied on the pixel electrode 144 will be maintained for a long period of time, so that each pixel can be stably displayed. 另外,即使像素电极144完全对应像素区域110a的范围而设置,也不影响薄膜晶体管'142的操作,进而能提升各个像素的开口率及显示面积。 Further, even if the pixel electrode 144 correspond exactly to the range of the pixel region 110a is provided, it does not affect the thin film transistor '142 operation, and thus can improve the aperture ratio of each pixel and the display area. 请再参照图3A,在一实施例中,封盖310的材质可为玻璃、石英、压克力或其它适当的材质。 Referring again to Figure 3A, in one embodiment, the material of the closure 310 may be made of glass, quartz, acrylic, or other suitable materials. 透明电极层320的材质例如为铟锡氧化物、铟锌氧化物或是其它能导电的透明材质。 Material of the transparent electrode layer 320, for example, indium tin oxide, indium zinc oxide or other transparent electrically conductive material. 在一实施例中,电子墨水材料层330包括多个电子墨水粒子330a,每一电子墨水粒子330a的一半边为亮色,另一半边为暗色,且各自带有不同的电性。 In one embodiment, the electronic ink material layer 330 includes a plurality of electronic ink particles 330a, a half of each electronic ink particles 330a are bright, and the other half dark color, and each with different electrical properties. 当像素电极144与透明电极层320之间的电场改变时,电子墨水材料层330中的电子墨水粒子330a便会被驱动,而使电子墨水显示装置200显示画面。 When an electric field between the pixel electrode 144 and the transparent electrode layer 320 changes, the electronic ink material layer 330 will electronic ink particles 330a is driven, the electronic ink display device 200 display screen. 电子墨水材料层330并不限定为上述的种类,图3B为另一实施例的电子墨水显示装置的结构示意图。 Electronic ink material layer 330 is not limited to the types described above, FIG. 3B is another embodiment of electronic ink schematic structural embodiment of a display device. 在此实施例的电子墨水显示装置200a中,电子墨水材料层330'里含有多个暗色粒子330a, -1、多个亮色粒子330a' -2以及一透明流体330a, -3。 In this embodiment, the electronic ink display device 200a, the electronic ink material layer 330 'contains a plurality of dark particles 330a, -1, a plurality of light-colored particles 330a' -2 and a transparent fluid 330a, -3. 其中,这些暗色粒子330a, -1与亮色粒子330a, -2 分布于透明流体330a, -3中,且各自带有不同的电性。 Wherein the dark particles 330a, -1 and bright particles 330a, -2 dispersed in a transparent fluid 330a, -3, and the each with a different electrically. 当像素电极144与透明电极层320之间的电场改变时,暗色粒子330a7 -1与亮色粒子330a' -2ii便会根据电场方向而向上或向下移动,进而使各像素显示所需的画面。 When an electric field between the pixel electrode 144 and the transparent electrode layer 320 changes, bright and dark particles 330a7 -1 particle 330a '-2ii according to the electric field direction will be upward or downward, thereby enabling each pixel to display the desired picture. 在进一步的实施例中,暗色粒子330a, -1、亮色粒子330a, -2以及透明流体330a, -3 可被包围在多个微胶囊330a'中。 In a further embodiment, dark particles 330a, -1, bright particles 330a, -2 and a transparent fluid 330a, -3 may be enclosed in a plurality of microcapsules 330a 'of. 在另一实施例中,暗色粒子33(Ta, -1、亮色粒子330a, -2以及透明流体330a, -3被置于多个微凹槽(microcup)范围内。在另一实施例中,暗色粒子-330a, -1、亮色粒子330a, -2以及透明流体330a, -3可不受侧向结构体限制而在主动区内移动。当然,在其它实施例中,暗色粒子330a' -1、亮色粒子330a, _2以及透明流体330a, -3可配合各种不同的架构来配置。承上述,由于电子墨水显示装置200使用上述的薄膜晶体管阵列基板100,而使其具有较佳的显示质量。综上所述,本发明所提出的薄膜晶体管阵列基板、电子墨水显示装置至少具有下列优点:(1) 本发明的薄膜晶体管阵列基板中的薄膜晶体管,其通过双栅极结构的作用,而可以减少在额定关闭期间经由薄膜晶体管泄漏出的漏电流。(2) 由于漏电流减少,所以在像素电极上所施加的电压准位可因此更佳稳定。(3) 即使像素 In another embodiment, dark particles 33 (Ta, -1, bright particles 330a, -2 and a transparent fluid 330a, -3 is disposed within a plurality of micro grooves (Microcup) range. In another embodiment, dark particles -330a, -1, bright particles 330a, -2 and a transparent fluid 330a, -3 can not move laterally limiting structure in the active region. of course, in other embodiments, dark particles 330a '-1, bright particles 330a, _2 and a transparent fluid 330a, -3 with a variety of different architectures may be arranged. bearing the above, since the electronic ink display apparatus 200 using the thin film transistor array substrate 100, and to have a better display quality. in summary, the present invention proposed a thin film transistor array substrate, an electronic ink display device has at least the following advantages: (1) a thin film transistor array substrate according to the present invention, a thin film transistor, which may be by the action of the double gate structure, during the reduction of rated off leak out via the thin film transistor leakage. (2) Since the leakage current decreases, the voltage level applied to the pixel electrode can be thus better stabilized. (3) even if the pixel 电极覆盖薄膜晶体管而设置,也不影响薄膜晶体管的操作, 所以本发明可以提升各个像素的开口率及显示面积。(4) 由于本发明所提出的薄膜晶体管阵列基板的漏电流较小,所以利用此薄膜晶体管阵列基板而制作的显示装置会具有较佳的显示质量。当然,本发明还可有其它多种实施例,在不背离本发明精神及其实质的情况下,熟悉本领域的普通技术人员当可根据本发明做出各种相应的改变和变形,但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。 Electrode covering the thin film transistor is provided, does not affect the operation of the thin film transistor, the present invention can improve the aperture ratio of each pixel of the display area, and (4) the leakage current of the thin film transistor array substrate is proposed by the present invention is small, so the use of this produced a thin film transistor array substrate of the display device can have better display quality. of course, the present invention may have a variety of other embodiments, without departing from the spirit and essence of the present invention, those of ordinary skill in the art when the art can make various corresponding modifications and variations according to the present invention, but such corresponding changes and variations should fall within the scope of the appended claims.

Claims (10)

  1. 1.一种薄膜晶体管阵列基板,其特征在于,包括: 一基板; 多条扫描线与多条数据线,配置于该基板上; 多个像素,每一该像素电性连接至该扫描线之一与该数据线之一,每一像素包括一薄膜晶体管以及与该薄膜晶体管电性连接的一像素电极,且该像素电极是位于该薄膜晶体管的上方,其中该薄膜晶体管包括: 一第一栅极,与对应的该扫描线电性连接; 一第一绝缘层,覆盖该第一栅极; 一半导体层,配置于该第一栅极上方的该第一绝缘层上; 一源极与一漏极,配置于该半导体层上且部份覆盖该半导体层,且该源极与对应的该数据线电性连接,该漏极与该像素电极电性连接; 一第二绝缘层,覆盖该源极、该漏极以及该半导体层;以及至少一第二栅极,配置于该半导体层上方的该第二绝缘层上,且该第二栅极与该第一栅极电性相连。 1. A thin film transistor array substrate comprising: a substrate; a plurality of scan lines and a plurality of data lines, disposed on the substrate; a plurality of pixels, each pixel which is electrically connected to the scan line of a data line with one of the, each pixel comprising a thin film transistor and a pixel electrode connected electrically to the thin film transistor, and the pixel electrode is located above the thin film transistor, wherein the thin film transistor comprising: a first gate electrode connected electrically to the corresponding scanning line; a first insulating layer, covering the first gate electrode; a semiconductor layer disposed on the first insulating layer over the first gate electrode; a source electrode and a a a drain, disposed on portions of the semiconductor layer and covering the semiconductor layer, and the data line is electrically connected to the corresponding source electrode, the drain is connected electrically to the pixel electrode; a second insulating layer covering the a source electrode, the drain electrode and the semiconductor layer; and at least a second gate electrode disposed on the second insulating layer over the semiconductor layer, and the second gate is connected to the gate of the first.
  2. 2. 根据权利要求1所述的薄膜晶体管阵列基板,其特征在于,该第一绝缘层与该第二绝缘层具有一开口来暴露部份该第一栅极,以使该第二栅极通过该开口电性连接该第一栅极。 The thin film transistor array substrate according to claim 1, wherein the first insulating layer and the second insulating layer having an opening to expose a portion of the first gate, the second gate so by the opening is electrically connected to the first gate.
  3. 3. 根据权利要求1所述的薄膜晶体管阵列基板,其特征在于,还包括多条共通导线,配置于该基板上,该共通导线与该扫描线平行,且位于相邻的该扫描线之间。 The thin film transistor array substrate according to claim 1, characterized by further comprising a plurality of common wires, disposed on the substrate, the wire parallel to the common scanning line and the scanning line positioned between adjacent .
  4. 4. 根据权利要求1所述的薄膜晶体管阵列基板,其特征在于,该像素电极的材质是选自于由铟锡氧化物、铟锌氧化物、金属及其组合所组成的族群之一。 The thin film transistor array substrate according to claim 1, wherein the pixel electrode is a material selected from the group consisting of indium tin oxide, indium zinc oxide, one of the metal group, and combinations thereof.
  5. 5. —种电子墨水显示装置,其特征在于,包括: 如权利要求1所述的薄膜晶体管阵列基板;一前面板,配置于该薄膜晶体管阵列基板的一侧,该前面板包括: 一封盖;一透明电极层,配置于该封盖下方;以及一电子墨水材料层,配置于该透明电极层与该薄膜晶体管阵列基板之间。 5 - electronic ink display device comprising: a thin film transistor array substrate according to claim 1; a front panel disposed at a side of the TFT array substrate, the front panel comprising: a closure ; a transparent electrode layer disposed below the closure; and an electronic ink material layer disposed between the transparent electrode layer and the thin film transistor array substrate.
  6. 6. 根据权利要求5所述的电子墨水显示装置,其特征在于,该第一绝缘层与该第二绝缘层具有一开口来暴露部份该第一栅极,以使该第二栅极通过该开口电性连接该第一栅极。 The electronic ink as claimed in claim 5, wherein the display apparatus, wherein the first insulating layer and the second insulating layer having an opening to expose a portion of the first gate, the second gate so by the opening is electrically connected to the first gate.
  7. 7. 根据权利要求5所述的电子墨水显示装置,其特征在于,还包括多条共通导线,.配置于'该基板上,该共通导线与该扫描线平行,且位于相邻的该扫描线之间。 According to claim 5, wherein the electronic ink display device, characterized by further comprising a plurality of common wires. Disposed 'on the substrate, the common conductor and the scanning line parallel to and located adjacent to the scanning line between.
  8. 8. 根据权利要求5所述的电子墨水显示装置,其特征在于,该电子墨水材料层包括多个电子墨水粒子及一透明流体,该电子墨水粒子包括多个暗色粒子及多个亮色粒子,且该暗色粒子与该亮色粒子各自带有不同的电性分布于该透明流体中。 8. The electronic ink display device according to claim 5, wherein the electronic ink material layer comprises a plurality of electronic ink particles, and a transparent liquid, the particles comprising a plurality of electronic ink particles and a plurality of bright dark particles and the dark color of the bright particles and particles each having different electrical properties of the transparent fluid distribution.
  9. 9. 根据权利要求8所述的电子墨水显示装置,其特征在于,还包括多个微胶囊或多个微凹槽,该暗色粒子、该亮色粒子与该透明流体是被置于该微胶囊或该微凹槽中。 According to claim 8, said electronic ink display apparatus, characterized by further comprising a plurality of microcapsules or a plurality of micro-depressions, the particles are dark, the bright particles with the transparent fluid is placed in the microcapsules or the micro-groove.
  10. 10. 根据权利要求5所述的电子墨水显示装置,其特征在于,该电子墨水材料层包括多个电子墨水粒子,每一电子墨水粒子的一半边为亮色,另一半边为暗色,且各自带有不同的电性。 10. The electronic ink display device according to claim 5, wherein the electronic ink material layer comprises a plurality of electronic ink particles, a half of each electronic ink particles is bright and the other half dark color, and each belt We have different electrical properties.
CN 200610149946 2006-10-19 2006-10-19 Thin film transistor array substrate and electronic ink display device CN100547800C (en)

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