CN100547785C - Direct insertion LED and manufacture method - Google Patents
Direct insertion LED and manufacture method Download PDFInfo
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- CN100547785C CN100547785C CNB2007100283710A CN200710028371A CN100547785C CN 100547785 C CN100547785 C CN 100547785C CN B2007100283710 A CNB2007100283710 A CN B2007100283710A CN 200710028371 A CN200710028371 A CN 200710028371A CN 100547785 C CN100547785 C CN 100547785C
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Abstract
The direct insertion LED and the manufacture method that the invention discloses a kind of rated voltage height, can directly be connected with power supply.This light-emitting diode comprises housing (10), two pins (11,12), led chip (2), described housing (10) is the heat radiating metal housing, two described pins (11,12) be fixedly connected by insulant (13) with described housing (10), described led chip (2) comprises silicon substrate (20), anode contact (21), cathode contact (22) and several LED bare chips (23), described silicon substrate (20) is fixed in described housing (10) inner bottom surface, described anode contact (21), described cathode contact (22) respectively with two described pins (11,12) be connected, series connection or connection in series-parallel are connected between the described LED bare chip (23).This manufacture method comprises chip, routing, goes up fluorescent material, on protect the step of glue.The present invention can be widely used in the LED lighting field.
Description
Technical field
The present invention relates to a kind of direct insertion LED and manufacture method thereof.
Background technology
Light-emitting diode is LED, because it has the lighting field that is applied to that volume is little, brightness is high, the advantage of little power consumption is just more and more general.Because LED wiring board commonly used is aluminium base, aluminium base itself is a conductor, thereby very easily short circuit in the course of processing of integrated chip, can't realize being connected in series of LED bare chip, and the rated voltage of present LED bare chip is all below 4V, therefore LED to be applied to throw light on generally several light-emitting diodes are connected to insert the higher power supply of voltage again or be connected and insert power supply again with external control circuit, be single led can't be directly being connected with the higher power supply of voltage, this has limited the application of LED as lighting source.
Summary of the invention
Technical problem to be solved by this invention is to overcome the deficiencies in the prior art, the direct insertion LED that provide a kind of rated voltage height, can directly be connected with power supply.
In addition, the present invention also provides a kind of method of making this direct insertion LED.
The technical scheme that direct insertion LED of the present invention adopted is: direct insertion LED of the present invention comprises housing; two pins; led chip; be covered in the fluorescent material on the described led chip; protection glue; described housing is the heat radiating metal housing; two described pins and described housing are fixedly connected by insulant; described led chip comprises silicon substrate; the anode contact; cathode contact and several LED bare chips; described silicon substrate is fixed in described housing inner bottom surface; described anode contact; described cathode contact is connected with two described pins respectively, and series connection or connection in series-parallel are connected between the described LED bare chip.
Described direct insertion LED also comprises optical lens, and described optical lens ladle cover is full of described protection glue in the outside and described optical lens inside of described led chip.
Described LED bare chip comprises substrate and N type epitaxial loayer, P type epitaxial loayer, described silicon substrate end face has the depositing metal layers of two separation in each described LED bare chip place, described LED bare chip formal dress or flip chip bonding are connected on each described metal level, described silicon substrate has a well region in each described LED bare chip place, the land of described metal level and described silicon substrate also has the separator of a doping respectively, described separator is positioned at described well region, be provided with the barrier layer between the described metal level of each described LED bare chip correspondence, described metal level is drawn described anode contact respectively, described cathode contact.
Described substrate is GaAs or silicon carbide substrates, and described substrate directly is welded on the described metal level, and described P type epitaxial loayer is welded on the adjacent described metal level by the metal wire correspondence; Perhaps, described P type epitaxial loayer, described N type epitaxial loayer are welded on the described metal level by solder-ball flip respectively; Perhaps, described substrate is an alumina substrate, and described substrate formal dress welds or sticks on the described metal level, and described P type epitaxial loayer, described N type epitaxial loayer are welded on the adjacent described metal level by metal wire respectively.
The technical scheme that manufacture method adopted of direct insertion LED of the present invention is: it may further comprise the steps:
(a) go up chip: the described silicon substrate of described led chip is fixed in described housing inner bottom surface;
(b) routing: the described anode contact of described led chip, described cathode contact are fixedly connected by routing with the afterbody of two described pins respectively;
(c) go up fluorescent material: described fluorescent material is covered on the described led chip;
(d) go up protection glue: silica gel or resin are covered in described housing inner chamber as described protection glue.
Step (d) also comprises the installation optical lens, described optical lens is fixed on the described housing, and described protection glue filling is filled with in described optical lens.
The invention has the beneficial effects as follows: because the described housing of direct insertion LED of the present invention is the heat radiating metal housing, two described pins and described housing are fixedly connected by insulant, described led chip comprises silicon substrate, the anode contact, cathode contact and several LED bare chips, described silicon substrate is fixed in described housing inner bottom surface, described anode contact, described cathode contact is connected with two described pins respectively, series connection or connection in series-parallel are connected between the described LED bare chip, the rated voltage of a general LED bare chip is all below 4V, in the majority with 3.0～3.3V, its total rated voltage of series connection back becomes several times to increase between the described LED bare chip, if illumination does not still reach requirement, can also on the basis of series connection, carry out parallel connection again, like this because the rated voltage raising, make single led can be directly being connected, and do not need peripheral circuit, connect simple with the higher power supply of voltage, failure rate is low, so rated voltage height of the present invention, can directly be connected with power supply; If external voltage still surpasses the voltage of direct insertion LED of the present invention, also a plurality of direct insertion LEDs can be in series, until close with external voltage to reach the purpose of saving loss and simplification external circuit;
Because the described silicon substrate of led chip of the present invention has a well region in each described LED bare chip place, the land of described metal level and described silicon substrate also has the separator of a doping respectively, described separator is positioned at described well region, be provided with the barrier layer between the described metal level of each described LED bare chip correspondence, its polarity of described metal level that is each described LED bare chip place correspondence is not necessarily identical, therefore each described LED bare chip can produce parallel connection or series connection or connection in series-parallel each other and is connected, and has avoided adopting on a metal substrate each LED bare chip to be connected in parallel can't realizing and has connected and drawback that connection in series-parallel is connected; Described separator both had been used to isolate described metal level and described silicon substrate, prevent electric leakage or short circuit between the described metal level, also constitute an electrostatic protection diode between the described well region at described separator and its place simultaneously, play the effect of electrostatic protection in encapsulation process; Because series connection or connection in series-parallel are connected between the LED bare chip of the present invention, on using, power LED can adopt the lower little chip of manufacturing cost integrated, cost than the power-type LED chip that adopts a LED bare chip is lower, each described LED bare chip by connected described metal wire or soldered ball with heat pass to described metal level or directly the described substrate by described LED bare chip heat is passed to described metal level, and by described separator with the described silicon substrate of heat transferred, described silicon substrate arrives described housing with heat transferred again, heat also distributes by two described pins simultaneously, thermal source disperses, so good heat dissipation effect, avoid temperature too high, so long service life is integrated level height of the present invention, good heat dissipation effect, long service life.
Description of drawings
Fig. 1 a is the side structure schematic diagram of the embodiment of the invention one, two, three direct insertion LEDs;
Fig. 1 b is the side structure schematic diagram of the embodiment of the invention four, five, six direct insertion LEDs;
Fig. 2 is the Facad structure schematic diagram of the embodiment of the invention one led chip;
Fig. 3 is the A-A section structure schematic diagram of led chip shown in Figure 2;
Fig. 4 is the Facad structure schematic diagram of the embodiment of the invention two led chips;
Fig. 5 is the B-B section structure schematic diagram of led chip shown in Figure 4;
Fig. 6 is the Facad structure schematic diagram of the embodiment of the invention three led chips;
Fig. 7 is the C-C section structure schematic diagram of led chip shown in Figure 6;
Fig. 8 is the Facad structure schematic diagram of the embodiment of the invention four led chips;
Fig. 9 is the D-D section structure schematic diagram of led chip shown in Figure 8;
Figure 10 is the Facad structure schematic diagram of the embodiment of the invention five led chips;
Figure 11 is the E-E section structure schematic diagram of led chip shown in Figure 10;
Figure 12 is the Facad structure schematic diagram of the embodiment of the invention six led chips;
Figure 13 is the F-F section structure schematic diagram of direct insertion LED shown in Figure 12.
Embodiment
Embodiment one:
As Fig. 1 a; Fig. 2; shown in Figure 3; the direct insertion LED of present embodiment comprises housing 10; two pins 11; 12; led chip 2; be covered in the fluorescent material 5 on the described led chip 2; protection glue 6; described protection glue 6 adopts silica gel or resin; described housing 10 is the heat radiating metal housing; two described pins 11; 12 are fixedly connected by insulant 13 with described housing 10; described insulant 13 adopts resin; can certainly adopt other material; described led chip 2 is the forward LED integrated chip; comprise silicon substrate 20; anode contact 21; cathode contact 22 and 12 LED bare chips 23; described silicon substrate 20 is fixed in described housing 10 inner bottom surfaces; described anode contact 21; described cathode contact 22 respectively with two described pins 11; 12 are connected; adopt earlier per three and be unified into one group between the described LED bare chip 23; again with four groups of connected modes that are in series and connect; like this; described anode contact 21; rated voltage between the described cathode contact 22 is 4 times of single led bare chip; promptly can directly be connected on the 12V DC power supply; therefore can be applicable on the automobile as light source; and do not need peripheral circuit; therefore easy to use; connect simply, failure rate is low.Described LED bare chip 23 comprises GaAs (GaAs) substrate 230 and N type epitaxial loayer 231; P type epitaxial loayer 232; certainly; described substrate 230 also can be carborundum (SiC) substrate; be that described LED bare chip 23 is single electrode chip; described silicon substrate 20 is a N type silicon substrate; described silicon substrate 20 end faces have the depositing metal layers 24 of two separation in each described LED bare chip 23 place; described LED bare chip 23 formal dress are welded on each described metal level 24; be that described substrate 230 directly is welded on the described metal level 24; described P type epitaxial loayer 232 is welded on the adjacent described metal level 24 by metal wire 41 correspondences; described silicon substrate 20 has a P type well region well region 27 in each described LED bare chip 23 place; the land of described metal level 24 and described silicon substrate 20 also has the N type separator 25 of materials such as a Doping Phosphorus or arsenic respectively; described separator 25 is positioned at described well region 27; be used to isolate described metal level 24 and described silicon substrate 20; prevent electric leakage or short circuit between the described metal level 24; the heat that described separator 25 of while is passed to described metal level 24 with described LED bare chip 23 passes to described silicon substrate 20 again; play good heat conduction; thermolysis; also constitute an electrostatic protection diode between the described well region 27 at described in addition separator 25 and its place; play the effect of electrostatic protection in encapsulation process; be provided with barrier layer 26 between the described metal level 24 of each described LED bare chip 23 correspondence; prevent electric leakage or short circuit between the described metal level 24, described metal level 24 is drawn described anode contact 21 respectively; described cathode contact 22.Described metal level 24 is a metallic aluminium, can certainly adopt metallic copper or silicon-aluminum, and described metal level 24 is electrode, electric conductor, is again fin, and described metal wire 41 is a gold thread, can certainly be aluminum steel or copper cash.
Certainly, described silicon substrate 20 also can be P type silicon substrate, and at this moment, described well region 27 is a N type well region, and described separator 25 is the P type separator of materials such as doped with boron or boron difluoride.
The manufacture method of the direct insertion LED of present embodiment may further comprise the steps:
(a) go up chip: the described silicon substrate 20 of described led chip 2 is fixed in described housing 10 inner bottom surfaces;
(b) routing: the described anode contact 21 of described led chip 2, described cathode contact 22 are fixedly connected by routing with the afterbody of two described pins 11,12 respectively;
(c) go up fluorescent material: described fluorescent material 5 is covered on the described led chip 2;
(d) go up protection glue: silica gel or resin are covered in described housing 10 inner chambers as described protection glue 6.
Embodiment two:
As Fig. 4, shown in Figure 5, the difference of present embodiment and embodiment one is: the described led chip 2 of the direct insertion LED of present embodiment is flip-chip LED integrated chip, described P type epitaxial loayer 232, described N type epitaxial loayer 231 are connected on the described metal level 24 by soldered ball 42 flip chip bondings respectively, described soldered ball 42 is the gold goal bolt, can certainly be copper ball bolt or tin ball.
All the other features of present embodiment are identical with embodiment one.
Embodiment three:
As Fig. 6, shown in Figure 7, the difference of present embodiment and embodiment one is: the described substrate 230 of the direct insertion LED of present embodiment is aluminium oxide (Al
2O
3) substrate, be that described LED bare chip 23 is the bipolar electrode chip, described substrate 230 formal dress weld or stick on the described metal level 24, and described P type epitaxial loayer 232, described N type epitaxial loayer 231 are welded on the adjacent described metal level 24 by metal wire 43,45 respectively.
All the other features of present embodiment are identical with embodiment one.
Embodiment four:
As Fig. 1 b, Fig. 8, shown in Figure 9, present embodiment is with the difference of embodiment one: between each described LED bare chip 23 by described metal level 24 connected mode---all being in series between each described LED bare chip 23 of present embodiment is connected, be that all LED bare chips 23 between described anode contact 21 and the described cathode contact 22 are in series, like this, rated voltage between described anode contact 21, the described cathode contact 22 is 12 times of single led bare chip, promptly can directly be connected on 36～40V DC power supply, not need peripheral circuit equally.In addition; the described direct insertion LED of present embodiment also comprises optical lens 14; described optical lens 14 ladle covers are full of described protection glue 6 in outside and described optical lens 14 inside of described led chip 2, and described optical lens 14 can adopt multiple angles, to improve spotlight effect.
Thus, the manufacture method of present embodiment direct insertion LED also comprises the installation optical lens in step (d), is about to described optical lens 14 and is fixed on the described housing 10, and described protection glue 6 fillings are filled with in described optical lens 14.
All the other features of present embodiment are identical with embodiment one.
Embodiment five:
As Figure 10, shown in Figure 11, the difference of present embodiment and embodiment four is: the described led chip 2 of the direct insertion LED of present embodiment is flip-chip LED integrated chip, described P type epitaxial loayer 232, described N type epitaxial loayer 231 are connected on the described metal level 24 by soldered ball 42 flip chip bondings respectively, described soldered ball 42 is the gold goal bolt, can certainly be copper ball bolt or tin ball.
All the other features of present embodiment are identical with embodiment four.
Embodiment six:
As shown in Figure 12 and Figure 13, the difference of present embodiment and embodiment four is: the described substrate 230 of the direct insertion LED of present embodiment is aluminium oxide (Al
2O
3) substrate, be that described LED bare chip 23 is the bipolar electrode chip, described substrate 230 formal dress weld or stick on the described metal level 24, and described P type epitaxial loayer 232, described N type epitaxial loayer 231 are welded on the adjacent described metal level 24 by metal wire 43,45 respectively.
All the other features of present embodiment are identical with embodiment four.
Certainly, the concrete connected mode and the quantity of the described LED bare chip 23 of direct insertion LED of the present invention are not limited to above embodiment, only illustrate among the embodiment.Such as, can be according to actual needs, with adopting earlier per two and be unified into one group between 12 described LED bare chips 23, with six groups of connected modes that are in series and connect, like this, can directly be connected on 18～20V DC power supply and use again; The connection that all is in series between 40 described LED bare chips 23 like this, can directly can also be connected on the 120V DC power supply and use.
The present invention is integrated in several described LED bare chip 23 formal dress or upside-down mounting on the described silicon substrate 20, and described led chip 2 is connected on the described housing 10, make single led rated voltage height, can be directly be connected with the higher power supply of voltage, and do not need peripheral circuit, and connecting simply, failure rate is low, and good heat dissipation effect, long service life.
The present invention can be widely used in the LED lighting field.
Claims (6)
1; a kind of direct insertion LED; comprise housing (10); two pins (11; 12); led chip (2); be covered in the fluorescent material (5) on the described led chip (2); protection glue (6); optical lens (14); described optical lens (14) ladle cover is full of described protection glue (6) in outside and described optical lens (14) inside of described led chip (2); described housing (10) is the heat radiating metal housing; two described pins (11; 12) be fixedly connected by insulant (13) with described housing (10); described led chip (2) comprises silicon substrate (20); anode contact (21); cathode contact (22) and several LED bare chips (23); described silicon substrate (20) is fixed in described housing (10) inner bottom surface; described anode contact (21); described cathode contact (22) respectively with two described pins (11; 12) be connected; series connection or connection in series-parallel are connected between the described LED bare chip (23); it is characterized in that: described LED bare chip (23) comprises substrate (230) and N type epitaxial loayer (231); P type epitaxial loayer (232); described silicon substrate (20) end face is located the depositing metal layers (24) of two separation in each described LED bare chip (23); described LED bare chip (23) formal dress or flip chip bonding are connected on each described metal level (24); described silicon substrate (20) has been located a well region (27) in each described LED bare chip (23); the land of described metal level (24) and described silicon substrate (20) also has the separator (25) of a doping respectively; described separator (25) is positioned at described well region (27); be provided with barrier layer (26) between the described metal level (24) of each described LED bare chip (23) correspondence, described metal level (24) is drawn described anode contact (21) respectively; described cathode contact (22).
2, direct insertion LED according to claim 1, it is characterized in that: described substrate (230) is GaAs or silicon carbide substrates, described substrate (230) directly is welded on the described metal level (24), and described P type epitaxial loayer (232) is welded on the adjacent described metal level (24) by metal wire (41) correspondence.
3, direct insertion LED according to claim 1 is characterized in that: described P type epitaxial loayer (232), described N type epitaxial loayer (231) are connected on the described metal level (24) by soldered ball (42) flip chip bonding respectively.
4, direct insertion LED according to claim 1, it is characterized in that: described substrate (230) is alumina substrate, described substrate (230) formal dress welds or sticks on the described metal level (24), and described P type epitaxial loayer (232), described N type epitaxial loayer (231) are welded on the adjacent described metal level (24) by metal wire (43,45) respectively.
5, a kind of method that is used to make the described direct insertion LED of claim 1 is characterized in that: may further comprise the steps:
(a) go up chip: the described silicon substrate (20) of described led chip (2) is fixed in described housing (10) inner bottom surface;
(b) routing: the described anode contact (21) of described led chip (2), described cathode contact (22) are fixedly connected by routing with the afterbody of two described pins (11,12) respectively;
(c) go up fluorescent material: described fluorescent material (5) is covered on the described led chip (2);
(d) go up protection glue: silica gel or resin are covered in described housing (10) inner chamber as described protection glue (6).
6, the manufacture method of direct insertion LED according to claim 5; it is characterized in that: step (d) also comprises the installation optical lens; described optical lens (14) is fixed on the described housing (10), and described protection glue (6) filling is filled with in described optical lens (14).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100283710A CN100547785C (en) | 2007-06-01 | 2007-06-01 | Direct insertion LED and manufacture method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100283710A CN100547785C (en) | 2007-06-01 | 2007-06-01 | Direct insertion LED and manufacture method |
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| CN101106124A CN101106124A (en) | 2008-01-16 |
| CN100547785C true CN100547785C (en) | 2009-10-07 |
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Non-Patent Citations (2)
| Title |
|---|
| 矿用高亮度白光LED灯串封装技术研究. 王晓军，黄春英，刘朝晖.煤矿机械，第28卷第4期. 2007 |
| 矿用高亮度白光LED灯串封装技术研究. 王晓军，黄春英，刘朝晖.煤矿机械，第28卷第4期. 2007 * |
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