CN100547488C - Immersion optical projection system and manufacturing method of IC wafer - Google Patents

Immersion optical projection system and manufacturing method of IC wafer Download PDF

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CN100547488C
CN100547488C CN 200510079341 CN200510079341A CN100547488C CN 100547488 C CN100547488 C CN 100547488C CN 200510079341 CN200510079341 CN 200510079341 CN 200510079341 A CN200510079341 A CN 200510079341A CN 100547488 C CN100547488 C CN 100547488C
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wafer
side
fluid
lens
immersion
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CN1790165A (en
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刘如淦
施仁杰
曾鸿辉
林本坚
林进祥
陈俊光
高蔡胜
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台湾积体电路制造股份有限公司
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Abstract

一种浸入式光学投影系统与集成电路晶片的制造方法。 An immersion method of manufacturing an optical projection system and the type of integrated circuit die. 该浸入式光学投影系统包括:一末端镜片元件;一晶圆基座,用于握持一晶圆;一透明板,于该浸入式光学投影系统使用时座落于该末端镜片元件与该晶圆间。 The immersion optical projection system comprising: a terminal lens element; a wafer pedestal for holding a wafer; a transparent plate, when used in the immersion-type projection optical system located at the end of the lens element and the crystalline round room. 该透明板具有一镜片侧表面与一晶圆侧表面,该浸入式光学投影系统具有一镜片侧流体层,位于该末端镜片元件与该透明板的该镜片侧表面之间;以及该浸入式光学投影系统具有一晶圆侧流体层,位于该透明板的该晶圆侧表面与该晶圆之间。 The transparent sheet having a lens side surface and a side surface of the wafer, the immersion projection optical system having a lens-side fluid layer between the side surface of the lens located at the end of the lens element and the transparent plate; and the optical immersion a projection system having a wafer-side fluid layer located between the transparent plate side surface of the wafer and the wafer. 该晶圆侧流体层与该镜片侧流体层之间并无流通,且该镜片侧流体层可与该晶圆侧流体层相同或不同。 The wafer-side fluid layer is no fluid flow between the lens-side layer, and the lens-side fluid layers may be the same or different from the wafer-side fluid layer. 本发明较少污染镜片,且仍保有一般浸入式系统的优点与功能。 Lens of the present invention is less polluting, and still retains the advantages and features of the general immersion system.

Description

浸入式光学投影系统与集成电路晶片的制造方法技术领域 TECHNICAL FIELD immersion projection optical system and the integrated circuit die

本发明是有关于用于半导体制造中微影制程的浸入式光学 The present invention relates to an optical immersion lithography in a semiconductor manufacturing process

投影系统(immersion optical projection system )。 A projection system (immersion optical projection system). 背景技术 Background technique

在半导体制作过程中,通过微影制程以将掩膜版上的图案转印到基底或晶圆的表面上。 In the semiconductor manufacturing process, a pattern on the mask onto the surface of the substrate or wafer by photolithography process. 在已知的微影制程中,需形成阻剂层(通常为可在光线照射后改变其特性的高分子材料)于一中间结构上。 In known lithographic process, the resist layer (typically may change its properties after light irradiation polymeric material), on a structure for an intermediate form. 经由穿过一光学投影系统内的一系列镜片与掩膜版而将期望图案投影至阻剂层上。 Through a mask and through a series of lenses within the projection optical system and a desired pattern is projected onto the resist layer. 这些镜片缩小了投影影像的尺寸。 These lenses reduce the size of the projected image. 由镜片造成的影像缩减则依据设计准则而改变,举例来说, 一般的影像缩减量约为4~ 5倍。 Caused by the reduced image of the lens is changed depending on design criteria, for example, a general reduced image is about 4 to 5 times. 当掩膜版上的图案投影至晶圓上阻剂层而产生曝光时,经曝光区域的阻剂层的酸性便产 When the mask pattern is projected on the resist layer on the wafer to produce an exposure, the resist layer by the acid in the exposed regions will yield

生变化。 Health changes. 并于阻剂显影时,移除部分阻剂而形成了一图案化的阻剂层。 And, at a developing the resist, removing portions of the resist layer is formed of a resist patterned.

在晶圆上投影形成具有最小尺寸的清晰且精确的图案往往受限于所使用光源的波长。 A projection formed on the wafer in a clear and precise pattern having the smallest size is often limited by the wavelength of the light source used. 举例来说,目前采用了深紫外光具有波长约为248纳米至193纳米的微影系统中,通常可形成特征尺寸介于130〜90纳米的图案。 For example, a currently used characteristic dimension between pattern 130~90 nm deep ultraviolet light having a wavelength of about 248 nm to 193 nm lithography systems, typically formed. 为了延长193纳米微影技术所形成的特征尺寸至0.45纳米或以下,便衍生出了流体浸入式微影技术。 Characterized in order to prolong the lithography formed 193 nm to 0.45 nm or less size, the fluid will be derived from the immersion lithography. 如此将可得到数字孔径(numerical apertures )大于1的光学特性。 The thus obtained numerical aperture (numerical apertures) is greater than 1, the optical characteristics.

图l为一简化示意图,绘示了用于微影制程的一已知的浸入式光学投影系统(immersion optical projection system )10。 Figure l is a simplified schematic drawing illustrating a known optical projection system immersed (immersion optical projection system) 10 for the lithographic process. 图1所示的浸入式光学投影系统10有时也称为喷洒式结构(shower configuration )。 FIG immersion projection optical system 10 shown in structure sometimes referred spray (shower configuration). 在此系统中,连续地循环流体(fluid) 12,以消除热能所引起的毁损。 In this system, continuously circulating fluid (fluid) 12, in order to eliminate the damage caused by heat. 如图l中的浸入式光学投影系统10所示,在微影制程中,循环的流体12位于末端镜片元件22与晶圆24之间。 L in FIG immersion projection optical system, in a lithography process, the circulating fluid 12 positioned between the wafer 22 and the end 24 of the lens element 10. 在用于图1的浸入式光学投影系统10的浸入式镜头26中,流体入口14使得流体12流经位于末端镜片元件22与晶圆24间的空间,并为流体出口16所接收。 In the immersion projection optical system of FIG. 1 for immersion lens 10, 26, the fluid inlet 14 is located such that the fluid 12 flows through the space 24 of the wafer 22 and the end of the lens element, and a fluid outlet 16 is received. 在图1所示的一般晶圆基座(wafer chuck) 28中,其利用由真空通道30与真空管线32所供应的真空力而握持晶圆24。 In Figure 1 a general wafer susceptor (wafer chuck) 28, which is utilized by a vacuum force of the vacuum supply passage 32 and a vacuum line 30 while holding the wafer 24. 流体12则为毛细现象所局限,进而维持约1~ 2亳米(mm)的流体厚度。 Fluid 12 was limited by a capillary phenomenon, and thus maintain the fluid thickness of about 1 to 2 millimeters (mm) in. 此外,可在浸入式镜头26的外部区域使用其他真空通道和/或气压方式(未图示),以更限制此流体。 In addition, other vacuum channels may be used and / or pneumatically submerged in the outer region of the lens 26 (not shown), this fluid is more restricted. 用于浸入式光学投影系统10的流体通常为超纯度的去离子水,其具有高于一般介于镜片与晶圆表面间气泡的折射率(refractive index)的一折射率。 Immersion fluid for an optical projection system 10 is generally ultra-pure deionized water, having a refractive index higher than the normal range between the lens and the wafer surface bubbles (refractive index) of a refractive index. 此外,也可在水中添加其它添加物或掺质,以提高其折射率。 In addition, other additives may be added in the water or dopants, to increase its refractive index.

在如此的流体浸入式系统中,通常较佳地使用具有高反射率与低吸收表现的流体,并不期望流体吸收来自晶圆上的微尘(particles )。 In such an immersion fluid systems, it is generally preferred to use a fluid having a high reflectance and low absorption performance, and is not desirable from a fluid-absorbent dust on the wafer (particles). 然而,在使用图1所示的系统10时,阻剂层上的微尘将倾向被循环流体12的流动所带走。 However, in the system shown in FIG. 10, the dust on the resist layer will tend to be carried away by the flow of the circulating fluid 12. 如此的微尘将被带至末端镜片元件22的表面。 Such dust will be taken to the end surface 22 of the lens element. 如此将造成晶片的污染,而最终需要进行镜片更换,因而造成极为昂贵的代价。 So will result in contamination of the wafer, and ultimately the need for lens replacement, resulting in a very expensive price. 因此,便需要适用于微影制程中的一种浸入式,光学投影系统,其具有较少的镜片污染,且仍然可以保有浸入式系统的优点与功能。 Therefore, it needs to be applied to a lithography process in an immersion optical projection system having lenses less contamination and still retain the advantages and features of the immersion system.

发明内容 SUMMARY

有鉴于此,本发明的主要目的在于提供一种适用于微影制程中的浸入式光学投影系统、以及一种集成电路晶片的制造方法,其可具有專交少的4竟片污染情形,且仍4呆有一般浸入式系统的优点与功能。 In view of this, the main object of the present invention is to provide a lithographic process suitable for immersion in an optical projection system, and a method of manufacturing an integrated circuit wafer, which may have a special case of cross-contamination sheet actually less 4, and 4 has the advantage of still stay with the general function of immersion systems.

为了实现上述目的,依据本发明的一实施例,本发明提供- To achieve the above object, according to an embodiment of the present invention, the present invention provides -

了一种浸入式光学投影系统,其适用于微影制程,包括: 一末端镜片元件; 一晶圆基座,用于握持一晶圆; 一透明板,于该浸入式光学投影系统使用时座落于该末端镜片元件与该晶亂间。 An immersion projection optical system that is suitable for the lithography process, comprising: a terminal lens element; a wafer pedestal for holding a wafer; a transparent plate used in the immersion-type projection optical system located between the end of the lens element and the crystal disorder. 该透明板具有一镜片侧表面与一晶圆侧表面,该浸入式光学投影系统可具有一镜片侧流体层,位于该末端镜片元件以及该透明板的该镜片侧表面之间;以及该浸入式光学投影系统可具有一晶圆侧流体层,位于该透明板的该晶圆侧表面与该晶圓之间,其中该镜片侧流体层与该晶圆侧流体层间具有不同润湿特性。 The transparent sheet having a lens side surface and a side surface of the wafer, the immersion projection optical system may have a lens-side fluid layer is located between the end of the lens element and the transparent plate side surface of the lens; and submerged the optical projection system may have a wafer-side fluid layer located between the transparent plate side surface of the wafer and the wafer, wherein the lens-side fluid layer between the wafer-side fluid layers having different wetting properties. 于一实施例中,该晶圆侧流体层与该镜片侧流体层间并无流通。 In one embodiment, the fluid layer between the wafer and the lens-side side of the fluid flow layer is not implemented. 于一实施例中,该镜片侧流体层不同于该晶圆侧流体层。 In one embodiment, the lens-side fluid layer is different from the wafer-side fluid layer. 于一实施例中,该晶圆侧流体层的流体速率不同于该镜片侧流体层的流动速率。 In one embodiment, the wafer-side fluid velocity fluid layer is different from the flow rate of the fluid side of the lens layer.

本发明所述的浸入式光学投影系统,该透明板粘着于该末端镜片元件,该镜片侧流体层座落于该末端镜片元件与该透明寿反之间,并为静止。 Immersion projection optical system according to the present invention, the transparent plate is adhered to the end of the lens element, the lens-side fluid layer is located between the end of the lens element and the transparent anti-life, and is stationary.

本发明所述的浸入式光学投影系统,更包括: 一镜片侧流体入口,在该浸入式光学投影系统使用时邻近于该末端镜片元件,该镜片侧流体入口可使得一镜片侧流体流经透明板与该末端镜片元件之间,以形成至少部分的该镜片侧流动流体层;以及一镜片侧流体出口,在该浸入式光学投影系统使用时邻近于该末端镜片元件,该镜片侧流体出口可接收流动于该透明板与该末端镜片元件间的部分流体流动,以形成至少部分的镜片侧流动流体层。 Immersion optical projection system according to the present invention, further comprising: a lens-side fluid inlet adjacent the submerged when the projection optical system to the end of the lens element, the lens-side fluid inlet side may be such that a fluid flowing through the transparent lens between the end plate and the lens element, the lens-side to form a layer at least partially flow of fluid; and a fluid outlet side of the lens, when the adjacent immersion projection optical system to the end of the lens element, the lens-side fluid outlet ports receiving flow of the transparent plate and the portion of the fluid flow between the end of the lens element, the lens-side to form a flow of the fluid layer at least partially.

本发明所述的浸入式光学投影系统,包括: 一晶圆侧流体入口,位于该晶圆基座内,该晶圆侧流体入口可使得一晶圆侧 Immersion projection optical system according to the present invention, comprising: a fluid inlet side of the wafer, located in the base wafer, the wafer-side fluid inlet side of the wafer may cause a

流体流过该透明才反与该晶圆之间,以形成该晶圆侧流动流体层; Through which fluid flows between the wafer and the transparent counter-only, so as to form a layer of the wafer-side fluid flow;

以及一晶圆侧流体出口,位于该晶圆基座内,该晶圆侧流体出口可4妄收来自该透明4反与该晶圆之间的该流动流体,以形成该晶圆侧的流动流体层。 And a wafer-side fluid outlet, located in the base wafer, the wafer-side fluid outlet 4 may be received from the jump of the transparent fluid flow 4 between the counter and the wafer, the wafer-side to form a flow of fluid layer.

本发明所述的浸入式光学投影系统,更包括一载具,用于移动该透明板,其中该载具包括相互轴枢地耦合的两个或三个手臂。 Immersion optical projection system according to the present invention, further comprising a carrier for moving the transparent plate, wherein the carrier comprises two or three arms each pivotally coupled to the shaft.

依据本发明的另一目的,本发明提供了一种浸入式光学投 According to another object of the present invention, the present invention provides an immersion optical projection

影系统,其适用于微影制程,包括: 一末端镜片元件; 一透明板,粘着于该末端镜片元件; 一镜片侧的静止流体层,位于该末端镜片元件与该透明板之间; 一晶圆基座,用于握持一晶圆; 以及一晶圆侧的流动流体层,位于该透明纟反与该晶圆之间,其中该镜片侧的静止流体层与该晶圆侧的流动流体层间具有不同润湿特性。 Lithography system, which is suitable for the lithography process, comprising: a terminal lens element; a transparent plate adhered to the end of the lens element; stationary fluid layer of the lens side, located between the end of the lens element and the transparent plate; a crystal between the counter and the flow of the fluid layer and a wafer on the wafer side, Si is located in the transparent, wherein the stationary fluid flowing fluid layer side of the lens with the side of the wafer; round base for gripping a wafer The interlayer having different wetting properties.

本发明所述的浸入式光学投影系统,更包括: 一流体入口, 在该浸入式光学投影系统使用时邻近于该末端镜片元件,该流体入口可使得一流体流经透明板与晶圓之间,以形成至少部分的该晶圆侧的流动流体层;以及一流体出口,在该浸入式光学投影系统使用时邻近于该末端镜片元件,该流体出口可接收流动于该透明板与该晶圆间的该部分流体,以形成至少部分的该晶圆侧的流动流体层。 Immersion optical projection system according to the present invention, further comprising: a fluid inlet, between adjacent when the immersion projection optical system to the end of the lens element, of the fluid flowing through the fluid inlet may be a transparent plate such that the wafer to form a flow of the fluid layer at least part of the side of the wafer; and a fluid outlet, when the immersion projection optical system to the end adjacent the lens element, which may receive a fluid flow outlet to the transparent plate and the wafer the portion of the fluid between, to form a flow of the fluid layer at least part of the side of the wafer.

依据本发明的另一目的,本发明提供了一种集成电路晶片的制造方法,包括下列步骤:设置一末端镜片元件于一晶圆上, 其中于该末端镜片元件与该晶圆间设置有一透明板,该透明板具有一镜片侧表面与一晶圆侧表面;对该晶圆施行一微影制程; 于施行该微影制程时,形成一镜片侧流体于该末端镜片元件与该透明板的该镜片侧表面间;以及于施行该微影制程时,形成一晶圆侧流体于该透明才反的该晶圆側表面与该晶圆间,其中该镜片侧流体与该晶圆側流体间具有不同润湿特性。 According to another object of the present invention, the present invention provides a method of manufacturing an integrated circuit wafer, comprising the steps of: providing a lens element on the end of a wafer, which is provided with a transparent wafer to the end effector between the lens element plate, the transparent plate side surface having a lens surface of a wafer side; one of the purposes of the wafer lithography process; when performed in the lithography process, a lens is formed on the tip side of the fluid lens element and the transparent plate between the side surface of the lens; and when performed in the lithography process, the wafer is formed between a side of the transparent fluid before the opposite side surface of the wafer between the wafer, wherein the fluid side of the lens and the wafer side having different wetting properties.

本发明所述的集成电路晶片的制造方法,在施行该微影制程时该镜片侧流体是静止的,而该晶圆侧流体是流动的。 A method of manufacturing an integrated circuit wafer according to the present invention, when implemented in the lithography process of the lens-side fluid is stationary, while the wafer-side fluid is flowing.

本发明所述的集成电路晶片的制造方法,在施行该微影制程时该镜片侧流体是流动的,而该晶圆侧流体是静止的。 A method of manufacturing an integrated circuit wafer according to the present invention, when implemented in the lithography process of the lens-side fluid is flowing, the wafer-side fluid which is stationary.

本发明所述的集成电路晶片的制造方法,在施行该微影制程时,该镜片侧流体具有一镜片侧流体速率,该晶圆侧流体具有一晶圆侧流体速率,而该镜片侧流体速率不同于该晶圓侧褒体速率。 A method of manufacturing an integrated circuit wafer according to the present invention, when the lithography process is performed, the lens-side fluid having a fluid velocity lens side, the wafer having a wafer side of the fluid side of the fluid velocity, the fluid velocity and the lens-side Unlike the wafer side thereof praise rate.

附围说明 Description attached around

图l为一简化示意图,用以说明已知的用于微影制程的浸 Figure l is a simplified schematic view illustrating a known immersion lithography process for the

入式光学投影系统; The projection optical system;

图2为一简化示意图,用以说明依据本发明第一实施例的用于微影制程的浸入式光学投影系统; FIG 2 is a simplified schematic diagram for explaining an optical projection system for an immersion lithography process of the first embodiment of the present invention according to embodiments;

图3为一简化示意图,用以说明依据本发明第二实施例的用于微影制程的浸入式光学投影系统; Figure 3 is a simplified schematic diagram for explaining an optical projection system according to an immersion photolithography process for a second embodiment of the present invention;

图4为一简化示意图,用以说明依据本发明第三实施例的用于微影制程的浸入式光学投影系统; FIG 4 is a simplified schematic diagram for explaining an optical projection system for an immersion lithography process in a third embodiment according to the present invention;

图5为一简化示意图,用以说明第三实施例中的系统中用于放置与移动保护透明板的构造;以及 FIG 5 is a simplified schematic view illustrating a third embodiment of the system for configuration and placement of the mobile protective transparent plate; and

图6A~ 6C为一系列俯视图,用以显示数种不同的保护透明板的载具。 FIGS. 6A ~ 6C is a plan view of a series, to display several different protective transparent carrier plate.

具体实施方式 Detailed ways

为了让本发明的上述和其他目的、特征、和优点能更明显易懂,下文特举一较佳实施例,并配合所附图示,作详细说明如下。 To make the above and other objects, features, and advantages can be more fully understood by referring cite a preferred embodiment, illustrated in conjunction with the accompanying, described in detail below.

本发明的实施例将配合以下图式作详细《又述如下,其中于不同图式中所使用的相同附图标记代表了本发明不同实施例中的相同或相似元件。 Embodiments of the invention will be detailed with the following drawings, "and described as follows, wherein the same reference numerals in different drawings represent numerals used in the present invention is different from the same or similar elements in the embodiment. 以下图式并未依据实际尺寸而绘制,且为了说明目的,将简化某些实施例中的图式表示。 The following figures are not drawn according to actual dimensions and for purposes of illustration, certain embodiments will be simplified formula FIG. 本领域技术人员应知,本发明可基于以下实施例的精神而保有不同应用与变化。 Those skilled in the art will be appreciated that the present invention may vary based on the different applications to maintain the spirit of the following examples.

本发明的实施例提供了一种用于半导体装置制造中制程的 Embodiments of the present invention provides a method for manufacturing a semiconductor device in the manufacturing process

浸入式光学投影系统。 Immersion projection optical system. 图2显示了本发明的第一解说实施例。 Figure 2 shows a first illustrative embodiment of the present invention. 图3则显示了本发明的第二解说实施例。 FIG 3 shows a second illustrative embodiment of the present invention. 而图4-6C则显示了依据本发明的第三解说用实施例。 And FIG 4-6C displays based on a third illustrative embodiment of the present invention. 上述三个解说实施例将依据用于半导体制造所施行一微影程序作为主题,以解说本发明的不同特征以及优点。 The three above-described illustrative embodiment according to lithography used in semiconductor manufacturing a implemented as a program relating to explain various features and advantages of the present invention. 值得注意的是,以下所述的各实施例中, 不同特征可于本发明的其他实施例中混合或合并使用。 It is noted that, according to the following embodiments, the different features in the embodiments may be combined or mixed using other embodiments of the present invention. 此外, 还值得注意的是,于一实施例中所叙述或讨论的范围与特征不一定应用于本发明的另一实施例中,然而在大部分情形中,本领域技术人员当可受益于本发明所公开的技术。 In addition, also worth noting that, in a range of features of the embodiments as described or discussed is not necessarily applied to another embodiment of the present invention, however, in most cases, one skilled in the art when the benefit of this may be the invention disclosed techniques.

图2为一简化示意图,显示了依据本发明第一实施例的缘入式光学投影系统20,其适用于微影制程。 FIG 2 is a simplified schematic diagram showing the edge based on the optical system of the first embodiment of the projector of the present invention 20, suitable for use in lithography process. 于图2的浸入式光学投影系统20中,浸入式镜头26包括一末端镜片元件22与一保护透明板34。 20, the lens 26 is immersed in an immersion type projection optical system 2 includes a lens element 22 with a tip protective transparent plate 34. 在图2中,在微影制程时,浸入式镜头26座落于晶圆24上,而保护透明板34座落于末端镜片元件22与晶圆24之间。 In FIG. 2, when the lithography process, immersion lens 26 is located on the wafer 24, the protective transparent plate 34 is located between the end of the lens member 22 and the wafer 24. 保护透明板34具有一镜片侧表面36与一晶圆侧表面38。 Protective transparent lens plate 34 having a surface 36 and a side surface 38 of the wafer side. 在微影制程时,在末端镜片元件22与保护透明板34的镜片侧表面36之间则形成有一镜片侧流体层40,如图2所示-。 When the lithography process, the side surface of the lens between the end of the lens element 22 with a protective transparent plate 34 side of the lens 36 has a fluid layer 40 is formed, as shown in Fig -. 镜片侧流体层40具有等于0或大于0的一镜片侧流体速率。 The lens-side fluid layer 40 having a lens-side fluid velocity greater than or equal to 0 0. 此外,于第一实施例中,于保护透明板34的晶圆侧表面38与晶圆24间形成有一晶圆侧流体层42,其具有相同或不同于镜片侧流体速率的一晶圆侧流体速率,此晶圆侧流体速率可为O或大于0。 Further, in the first embodiment, the protective transparent plate side surface 34 of the wafer 38 and the wafer 24 is formed with a fluid layer 42 on the wafer side, a lens having the same or different from the rate of a wafer side of the fluid side of the fluid rate, the wafer-side fluid velocity can be O or greater than 0.

于第一实施例中,流体入口44、 46以及流体出口48、 50 座落于邻近末端镜片元件22处。 In the first embodiment, the fluid inlets 44, 46 and a fluid outlet 48, 50 located adjacent the end 22 of the lens element. 镜片侧的流体入口44提供了形成镜片侧流体层40的流体,以使得镜片侧流体层40的流体流经末端镜片元件22与保护透明板34间,且至少部分的镜片侧流体层40的流体为镜片侧的流体出口48所接收。 The fluid inlet side of the lens 44 provides a fluid side of the fluid lens-forming layer 40, so that the lens-side fluid through the fluid layer 40 of the terminal lens element 34 and the protective transparent plate 22, the lens-side fluid and at least a portion of the fluid layer 40 the fluid outlet side of the lens 48 is received. 晶圆侧的流体入口46提供了形成晶圆侧流体层42的流体,以使得晶圓侧流体层42的流体流经透明板34与晶圓24间。 The fluid inlet side of the wafer 46 to provide a fluid form the fluid layer 42 on the wafer side, the wafer side so that the fluid flowing through the fluid layer 42 of the transparent plate 34 and the wafer 24. 于第一实施例中,镜片侧流体层的流体较佳并非流动地连结于晶圆侧流体层42的流体,以避免来自于晶圆侧流体42中(如来自于晶圆24 的阻剂材料上)的微尘污染传播至末端镜片元件22处。 In the first embodiment, the fluid lens-side fluid layer is preferably not coupled to the fluid flow of the wafer-side fluid layer 42, the resist material 42 to prevent the wafer from the side of the fluid (e.g., from the wafer 24 a) propagation of dust contamination of the lens element 22 to the end. 当保护透明板34为微粒所污染时将可进行替换,而非替换末端镜片元件22。 When the protective transparent plate 34 when particulate contamination to be replaced, rather than replacing the end of the lens element 22. 如此,本发明优点之一在于,替换保护透明板34较替换末端镜片元件22来的经济与简单。 Thus, one advantage of the invention that the protective transparent plate 34 than replacing the end of the lens element 22 to replace the simple and economical. 于一较佳实施例中,由于保护透明板的使用,故可较为容易地进行移除与替换。 In one preferred embodiment, since the protective plate is transparent, it can be more easily removed and replaced. 然而,, 于某些实施例中,保护透明板34可永久地粘着于其他零件上, 而可能或不可能轻易移除之。 However ,, In some embodiments, the protective transparent plate 34 may be permanently adhered to the other components, and it may or may not be easily removed.

于其他实施例中,镜片侧流体层40可经由系统中的某些地方而流通地连结于晶圆侧流体层42。 In other embodiments, the lens-side fluid layer 40 may be fluidly connected to the fluid side of the wafer via the layer 42 in some parts of the system. 在这样的情形中,在加入于镜片侧流体流40之前,晶圆侧流体层42较佳地为经过过滤的。 In such a case, the addition of the lens 40 side of the fluid stream prior to, wafer-side fluid layer 42 is preferably filtered. 然而,基于某些理由,将仍使用两不同的流体40、 42。 However, for some reason, we will still use two different fluids 40, 42. 举例来说,晶圆24上的阻剂表面与于镜片表面的表面特性(如湿润角,wetting angle)可能不同。 For example, the resist on the wafer 24 surface and the surface properties of the lens surface (e.g., wetting angle, wetting angle) may be different. 因此,可能于各流体层40、 42的流体中分别加入不同的添加剂,以符合镜片与晶圓表面的湿润特性。 Thus, each of the fluid layer 40 may be in fluid 42 adding different additives, wetting characteristic of the lens to conform to the wafer surface. 因此,镜片侧流体层40的流体与晶圆侧流体层42 的流体可能具有不同的湿润特性。 Thus, the lens-side fluid fluid fluid layer 40 and the wafer-side fluid layer 42 may have different wetting properties. 镜片侧流体层40的流体可能包括一或多种添加物,以使得镜片侧流体层40的镜片侧流体湿润特性较为符合末端镜片元件22的湿润特性,而非符合晶圆24的湿润特性。 A fluid lens-side fluid layer 40 may include one or more additives to the fluid side such that the lens-side fluid wetting characteristics of the lens layer 40 is more in line with the end of wetting characteristic of the lens element 22, rather than in line with the wetting characteristics of the wafer 24. 同样的,晶圆侧流体层42也可包括一或多个添加物,使得晶圆侧流体层42的晶圆侧流体湿润特性较为符合晶圆的湿润特性,而非符合末端镜片元件22的湿润特性。 Similarly, the wafer-side fluid layer 42 may also include one or more additives, such that the fluid layer side wafer the wafer-side fluid 42 is more in line with wetting properties wetting characteristics of the wafer, rather than in line with the end 22 of the lens element wet characteristic.

另一原因则为,由于系统20中两流体层40、 42中使用两种不同的流体,因而较佳的可得到不同的折射率。 Another reason was due to the system 2040, using a two-fluid layer 42 of two different fluids, and thus preferred to obtain a different refractive index. 举例来说, 镜片侧流体层的流体40可具有接近末端镜片元件22的折射率, 而非较接近晶圆24和/或保护透明板34的折射率。 For example, the fluid lens-side fluid layer 40 may have a refractive index close to the end 22 of the lens element, rather than closer to the refractive index of the wafer 24 and / or the protective transparent plate 34. 因此,晶圆侧流体层42的流体较佳地具有不同的折射率。 Therefore, the fluid on the wafer side fluid layer 42 preferably have different refractive indices. 再者,当镜片侧流体层40的流体并非流动地连结于晶圆侧流体层42的流体时, 相较于晶圆侧流体层42的流体^由于镜片侧流体层的流体4Q 并不会接触晶圆24,故镜片侧流体层的流体40便非限定为一低吸收性流体。 Further, when the fluid lens-side fluid layer 40 is not fluidly connected to the fluid on the wafer-side fluid layer 42, the wafer compared to the fluid side of the fluid due to the fluid layer 42 ^ 4Q layer and the lens-side fluid does not contact wafer 24, so that the fluid lens-side fluid layer 40 will be defined as a low non-absorbing fluid.

于本发明的具有保护透明板34的浸入式光学投影系统20 中,介于末端镜片元件22、保护透明板34与晶圓24间(至少沿着图案投影路径)的所有空间较佳地为流体(例如高折射率的中间物)所填满。 Having a protective transparent plate in an immersion projection optical system 20 of the present invention 34, between the end of the lens element 22, a transparent protective plate 34 and the wafer 24 (at least along a projection path pattern) are preferably all fluid space (e.g., high refractive index intermediate) are filled. 在本发明的较佳实施例中,保护透明板34 与其两侧边浸入于流体层40、 42中。 In the preferred embodiment of the present invention, the protective transparent plate 34 at its both sides is immersed in the fluid layer 40, 42. 当沿着投射路径的任何空间内存在有间隙或气泡时,自掩膜版图案至镜片的高空间频率可能不符合阻剂特性。 When the memory space is projected along any path when a gap or air bubbles, from the mask pattern to the lens may not meet the high spatial frequency characteristics of the resist. 在保护透明板34各侧边的流体层40、 42也降低了对于保护透明板34的极度高光学品质的依赖。 The protective transparent plate 34 of each side fluid layers 40, 42 also reduce the extremely high optical quality dependence protective transparent plate 34. 由于保护透明板34也为沿着投影路径设置的一光学元件,且为极度低偏差系统,因此保护透明板34需精确地针对光线波长的分量而考虑其表面平坦度(surface flatness )、 光滑度(smoothness )、平行度(parallelism )、位移量(placement) 与定位(orientation)等情形。 Since the protective plate 34 is also a transparent optical element disposed along a projection path, and is extremely low bias system, thereby protecting the transparent plate 34 for the required precision components and considering the wavelength of the light surface flatness (surface flatness), smoothness (smoothness), parallelism (parallelism), the amount of displacement (Placement) positioning (Orientation) and other circumstances. 然而,在本发明的一个实施例中,当镜片侧流体层40与末端镜片元件22的折射率极为相符时,便不需要维持前述的光学特性。 However, in one embodiment of the present invention, when a fluid that closely match the refractive index of the lens layer 40 and the side end of the lens member 22, eliminates the need to maintain the optical characteristics of the foregoing. 于一实际应用中,即使折射率镜片侧流体层40与末端镜片元件22的折射率可以相符, 由于其较存在有空气时的折射率较为相符,因此前述光学品质便具有一大体的容忍度。 In an actual application, even if the refractive index of the lens 40 with the end side of the fluid layer 22 the refractive index of the lens element may match more consistent due to the refractive index of air than is present, and therefore the optical quality will generally have a tolerance. 举例来说,在193纳米波长设定中, 当保护透明板34可为石英材质而镜片侧流体为水时,折射率的差异约为1.55-1.44=0.11。 For example, at 193 nm wavelength is set, when the protective transparent plate 34 may be made of quartz and the lens-side fluid is water, the difference in refractive index of about 1.55-1.44 = 0.11. 经比较,在干燥系统中(气隙)的折射率差异约为1.55-1.00=0.55。 By comparison, in the drying system (air gap) of the difference in refractive index of about 1.55-1.00 = 0.55. 因此,约具有五倍的容忍度。 Thus, about five times with tolerance. 较佳地,保护透明板34的材料对于光化光线(actinic light )而言为透明的,其具有约为80%或更高的穿透率 Preferably, the material, the protective transparent plate 34 to actinic rays (actinic light) in terms of transparency, which has about 80% transmittance or greater

(transmission )。 (Transmission). 因此,对于浸入式光学投影系统20内所使用光线波长而言,保护透明板较佳地为透明(>80%穿透率).。 Thus, for an immersion projection optical system 20 the wavelength of light used, the protective transparent plate is preferably transparent (> 80% transmittance) .. 举例来说,在实施例中的系统20可采用波长约为436納米、约为365纳米、约为248纳米、约为193纳米或更少的光线。 For example, in an embodiment of the system 20 may employ a wavelength of about 436 nm, about 365 nm, about 248 nm, about 193 nm or less light. 举例来说,保护透明板34可包括任一适当材料,例如包括(但不以此为限):石英、熔融硅(fused silica )、氟化钙(CaF2)、 氟化锂(LiF2)、氟化镁(MgF2)以及其组合物。 For example, the protective transparent plate 34 may comprise any suitable material, e.g. including (but not limited to): quartz, fused silica (fused silica), calcium fluoride (in CaF2), lithium fluoride (LiF2), fluorine magnesium (MgF2), and combinations thereof. 保护透明板34的折射率较佳地相同或高于流体层40、 42的折射率。 Refractive index of protective transparent plate 34 is preferably the same as or higher than the refractive index of the fluid layers 40, 42. 举例来说,流体层40、 42较佳地具有约为1.3或更高的折射率。 For example, fluid layers 40, 42 preferably has a refractive index of about 1.3 or greater. 于一实施例中,水(例如超纯水、去离子水)为较佳流体,由于其折射率大于空气的折射率(即大于1)。 In one embodiment, the water (e.g. ultrapure water, deionized water) is the preferred embodiment of the fluid, since a refractive index greater than the refractive index of air (i.e., greater than 1). 于一实施例中,可于水中加入杂质和/或添加物,借以改变流体层40、 42的特定特性。 In one embodiment, water may be added to impurities and / or additives, so as to change the specific characteristics of the fluid layer 40, 42. 然而于其他实施例中,这些因子与标准将有所变动。 However, in other embodiments, these factors will vary with changes in the standard.

举例来说,保护透明板34可为大体平坦、部分弯曲、弯曲或上述形状的组合。 For example, the protective transparent plate 34 may be generally flat, curved portion, the curved shape or a combination thereof. 本发明实施例的另一优点为保护透明板34的镜片侧表面36可能不同于其晶圆側表面38。 Another advantage of embodiments of the present invention is a lens protective transparent plate 36 side surface 34 thereof may be different from the side surface 38 of the wafer. 由于末端镜片元件22的镜片表面特性具有一镜片湿润特性,而晶圆24的晶圆表面特性则具有一晶圆湿润特性。 Since the properties of the end surface of the lens element of the lens 22 has a lens wetting characteristics, surface properties of the wafer while the wafer 24 is a wafer having wetting properties. 因此,于一实施例中,《呆护透明板34的镜片侧表面36具有一镜片侧表面特性,其异于保护透明板34的晶圆侧表面38的晶圆侧表面特性。 Thus, in one embodiment, the "lens-side surface of the transparent protective plate 34 to stay 36 having a lens side surface characteristic which is different from the protective transparent plate side surface of the wafer 38 on the wafer side surface 34 of the properties. 镜片侧表面36的镜片侧表面特性具有一镜片側表面湿润特性,其较晶圆侧表面特性近似于镜片表面特性所提供的镜片湿润特性。 Side lens surface of the lens side surface 36 has a characteristic side lens surface wetting characteristics, which approximates the lens characteristics of the lens surface wetting properties than provided by the wafer side surface properties. 同样的,晶圆侧表面38的晶圆侧表面特性具有一晶圆侧表面湿润特性,其较镜片侧表面特性近似于晶圆表面特性所提供的镜片湿润特性。 Similarly, the characteristics of the wafer side surface of the wafer side surface 38 has a surface wetting characteristics of a wafer side, which is more characteristic of the lens-side surface wetting characteristic approximates lens surface properties provided by the wafer. 因此,保护透明板34的表面36、 38可分别地修改或定作,以符合(或较没有修改前接近)阻剂与镜片的表面湿润特性。 Thus, a transparent surface protective plate 36, 38 may be modified or given separately as to conform to (or compared to before modification without close) the surface wetting characteristics of the lens and the resist.

于本发明的实施例中,位于末端镜片元件22与保护透明板34间的镜片侧流体层40可为流动、静止或其他状态。 In the embodiment of the present invention, at the end of the lens element 22 with a lens protective transparent plate 34-side layer 40 of the fluid may be a flow, or other stationary state. 同样的, 位于保护透明板34与晶圆24间的晶圆侧流体层42可为静止、 流动或其他状态。 Similarly, the protective transparent plate 34 and the wafer 24 is the wafer-side fluid layer 42 may be stationary, mobile, or other states. 于前述第一实施例中,于微影制程时,镜片侧流体层40与晶圆侧流体层42较佳地为流动状态,虽然其也可为静止或介于静止与流动的其他状态。 The aforementioned first embodiment, at the time of the photolithography process, the lens-side fluid layer 40 and the wafer-side fluid layer is preferably a flow state, although it may also be stationary or between other stationary state of the flow 42.

图3为一简化示意图,用以说明依据本发明第二实施例的用于微影制程的浸入式光学投影系统20。 Figure 3 is a simplified schematic diagram for explaining an optical projection system for an immersion lithography process in a second embodiment of the present invention 20 according to embodiments. 于第二实施例中,镜片侧流体40为静止状态,而晶圆侧流体42为流动状态。 In the second embodiment, the lens-side fluid 40 is stationary, while the wafer 42 is a side fluid flow state. 镜片侧流体40可隐密地密封于保护透明板34与末端镜片元件22 之间。 Lens 40 may be hidden side fluid seal between the protective transparent plate 22 and the end 34 of the lens element. 此时,保护透明板34粘着于末端镜片元件22上。 In this case, the protective transparent plate 34 is adhered to the end 22 of the lens element. 换句话说,于平常浸入式光学投影系统20使用时,相对于末端镜片元件22,保护透明板34为静止。 In other words, when used in normal immersion optical projection system 20, the lens element 22 relative to the tip, the protective transparent plate 34 is stationary. 虽然保护透明板粘着于末端镜片元件22,由于其皆为粘着于浸入式镜头26上,因而其也可间接地粘着于末端镜片元件22上(例如保护透明板经由浸入式镜头26的其他构件粘着而于末端镜片元件22)。 Although the protective transparent plate 22 adhered to the end of the lens element, are all due to its adhesion to the immersion lens 26, and thus it may also be indirectly adhered to the end of the lens element 22 (e.g., via another adhesive protective transparent plate member 26 of the immersion lens and at the end of the lens element 22).

在本发明的一实施例中,在浸入式光学投影系统20使用时, 当末端镜片元件22朝向晶圆24移动时,对于浸入式镜头26、 末端镜片元件22、晶圆24、晶圆基座28或其组合而言,保护透明板34为静止。 In an embodiment of the present invention, when the immersion projection optical system 20 is used, when the end of the lens member 24 is moved toward the wafer 22, for immersion lens 26, the end of the lens element 22, the wafer 24, the wafer base 28 or a combination thereof, the protective transparent plate 34 is stationary. 举例来说,前述的第一与第二实施例中(请参照图2、 3),当末端镜片元件22对应晶圆24而移动时,相对于浸入式镜头26与末端镜片元件22,保护透明板34仍维持静止。 For example, the first embodiment and the second embodiment in the foregoing (refer to FIG. 2, 3), when the end of the lens element 22 corresponding to the movement of the wafer 24, the lens 26 and the immersion end of the lens element 22, with respect to the transparent protective plate 34 remains stationary.

图4为一简化示意图,用以说明依据本发明第三实施例的用于微影制程的浸入式光学投影系统20。 FIG 4 is a simplified schematic diagram for explaining an optical projection system for an immersion lithography process in a third embodiment according to the present invention 20. 于第三实施例中,当末端镜片元件22朝向晶圆24移动时,对于晶圆24以及晶圆基座28而言,保护透明板34为静止。 In the third embodiment, the lens element 22 when the end 24 is moved toward the wafer, to the wafer 24 and the wafer base 28, the protective transparent plate 34 is stationary. 保护透明板34可移除地粘着于晶圆基座28上,以允许晶圆24的移动与移出。 Protective transparent plate 34 is removably adhered to the base wafer 28 to allow movement of the wafer 24 is removed. 于晶圆基座28内设置有一晶圆侧流体入口46与出口50,以使得晶圆侧流体层42的流体流经保护透明层34与晶圆24之间。 Disposed in the base wafer 28 has a wafer-side fluid inlet 46 and outlet 50, so that the wafer-side fluid layer 24 between the transparent layer 34 and the wafer 42 is protected by the fluid flowing through. 邻近于漫入式镜头内的末端镜片元件22处则设置有镜片侧流体入口44 与出口48,借以供应镜片侧流体层40的流体。 Adjacent to diffuse into the lens at the end of the lens element 22 is provided with a lens-side fluid inlet 44 and outlet 48, thereby supplying fluid lens-side fluid layer 40.

图5则显示了座落于保护透明板34上的一平板状的载具54。 FIG 5 shows a protective transparent plate is located on a flat plate 34 of the carrier 54. 保护透明板34可平躺于栽具54上,因而自晶圆基座2J8 上为此载具54所回收。 Protective transparent plate 34 to be planted with a flat 54, thereby the wafer from the susceptor 54 for this carrier 2J8 recovered. 举例来说,于较佳实施例中,保护透明板34可通过载具54内的真空力举起与收纳。 For example, in the preferred embodiment, the protective transparent plate 34 by the vacuum force within the carrier 54 and lifting the housing. 此外,于微影制程中,透明保护板34也可为晶圆基座28内的真空力所握持 Further, in the lithography process, the transparent protective plate 34 may also be a vacuum force within the base 28 of the wafer holding

于握持透明保护板34后,载具54可于曝光系统20内的一简易位置暂停。 To grip the transparent protective rear panel 34, the carrier 54 may be simplified in a position within the exposure system 20 to pause. 在这样的情形中,微影制程较佳地需要最小化用于停放载具54的位置。 In such a case, a photolithography process is preferably used to minimize the need for the parking position of the vehicle 54. 为了减少停放位置的空间,载具54 可能具有任何的形状。 In order to reduce the space of the parked position, the carrier 54 may have any shape. 图6A~ 6C显示了多种不同载具54的可能范例的俯视图。 FIGS. 6A ~ 6C show various plan views of different examples of possible carrier 54. 在图6A中,载具54为环状(ring)外型,其包括真空槽(vacuum groove)和/或沿着载具54的环状部56分布的多个真空洞(vacuum hole )。 In FIG. 6A, the carrier 54 is a ring (Ring) shape, comprising a vacuum chamber (vacuum groove) and / or the carrier along a plurality of cavities 56 true distribution of the annular portion 54 (vacuum hole). 在图6B中,载具54 具有十字状(cross)外型。 In FIG. 6B, the carrier 54 has a cross shape (Cross) appearance. 在图6B中的纵向手臂58轴枢地 6B, the longitudinal arm 58 to the pivot axis

(pivotably )耦接于横向手臂60,以使得横向手臂60于不使用时可折向纵向手臂58。 (Pivotably) coupled to a transverse arm 60, such that the lateral arm 60 to be folded when not in use the arm 58 in the longitudinal direction. 图6C则显示了另外一个范例。 FIG. 6C shows another example. 在图6C中,栽具54具有叉状(fork)外型,其具有两轴枢地 In FIG. 6C, with a plant 54 having a fork (the fork) shape, having two pivot axes to

(pivotably)耦接的侧臂62。 (Pivotably) coupled to the side arm 62. 这些侧臂62可朝向中央手臂64 折迭以提供较为紧凑的折迭结构,以节省空间。 These side arms 62 may be folded toward the central arm 64 to provide a more compact folded configuration, to save space. 本领域技术人员应当知道,载具54可以是其他外型,而不局限于本发明的范围。 Those skilled in the art will be appreciated, the carrier 54 may be of other shape, without being limited to the scope of the present invention.

虽然本发明已通过较佳实施例说明如上,但该较佳实施例并非用以限定本发明。 Although the present invention has been described above by the preferred embodiments, but the preferred embodiments are not intended to limit the present invention. 本领域的技术人员,在不脱离本发明的精神和范围内,应有能力对该较佳实施例做出各种更改和补充, 因此本发明的〗呆护范围以^=又利要求书的范围为准。 Those skilled in the art, without departing from the spirit and scope of the present invention, the preferred embodiments should be able to make various modifications and additions, so the scope of protection of the present invention〗 stay in the claims and ^ = book range prevail.

附图中符号的简单说明如下 Brief Description of the symbols in the drawings as follows

10、 20:浸入式光学投影系统 40 :镜片侧流体层 10, 20: immersion projection optical system 40: a lens-side fluid layer

12 >循环流体 42 :晶圆侧流体层 12> circulating fluid 42: wafer-side fluid layer

14 流体入口 44 .镜片侧流体入口 14 the fluid inlet 44 of the lens-side fluid inlet

16 . 流体出口 46 ,晶圆侧流体入口 16. The fluid outlet 46, the fluid inlet side of the wafer

22 末端4竟片元件 48 一镜片侧流体出口 4 actually end plate member 22 a lens-side fluid outlet 48

24 晶圆 50 晶圆侧流体出口 24 wafer 50 on the wafer side fluid outlet

28' 晶圆基座 54 载具 28 'of the base 54 of the wafer carrier

30 真空通道 56 载具的环状部 30 vacuum channels 56 of the annular carrier portion

32: 真空管路 58 纵向手臂 32: a longitudinal arm 58 vacuum line

34' 透明保护板 60 横向手臂 34 'a transparent protective plate 60 transverse arm

36 透明保护板的镜 片側表面 62 侧臂 Lens-side surface 62 of the side arms 36 of the transparent protective plate

38 透明保护板的晶 圆侧表面 64 中央手臂 Crystal 38 side surface of the circular plate 64 of transparent protective central arm

Claims (11)

1、一种浸入式光学投影系统,适用于微影制程,包括: 一末端镜片元件; 一晶圆基座,用于握持一晶圆; 一透明板,在该浸入式光学投影系统使用时座落于该末端镜片元件与该晶圆之间,其中该透明板具有一镜片侧表面与一晶圆侧表面; 该浸入式光学投影系统具有一镜片侧流体层,位于该末端镜片元件以及该透明板的该镜片侧表面之间;以及该浸入式光学投影系统具有一晶圆侧流体层,位于该透明板的该晶圆侧表面与该晶圆之间,其中该镜片侧流体层与该晶圆侧流体层间具有不同润湿特性。 1, an immersion projection optical system for lithography process, comprising: a terminal lens element; a wafer pedestal for holding a wafer; a transparent plate, when the immersion projection optical system located between the end of the lens element and the wafer, wherein the transparent plate has a lens side surface and a side surface of the wafer; of the immersion projection optical system having a lens-side fluid layer, which is located in the end of the lens element and between the side surface of the lens of the transparent plate; and an immersion projection optical system having a wafer-side fluid layer located between the transparent plate side surface of the wafer and the wafer, wherein the layer and the lens-side fluid between the wafer-side fluid layers having different wetting properties.
2、 根据权利要求1所述的浸入式光学投影系统,其特征在于:该透明板粘着于该末端镜片元件,该镜片侧流体层座落于该末端镜片元件与该透明板之间,,并为静止。 2. The immersion optical projection system according to claim 1, wherein: the transparent plate adhered to the end of the lens element, the lens-side fluid layer is located between the end of the lens element and the transparent plate ,, for the rest.
3、 根据权利要求1所述的浸入式光学投影系统,其特征在于,更包括:一镜片侧流体入口,在该浸入式光学投影系统使用时邻近于该末端镜片元件,该镜片侧流体入口可使得一镜片侧流体流经透明板与该末端镜片元件之间,以形成至少部分的该镜片侧流动流体层;以及一镜片侧流体出口,在该浸入式光学投影系统使用时邻近于该末端镜片元件,该镜片侧流体出口可接收流动于该透明板与该末端镜片元件间的部分流体流动,以形成至少部分的镜片侧流动流体层。 3, according to an immersion projection optical system according to claim 1, characterized in that, further comprising: a lens-side fluid inlet adjacent to the lens element at the end of the immersion projection optical system, the lens-side fluid inlet may be such that the fluid flowing through the side of a lens between the end of the transparent plate and the lens element, the lens-side to form a layer at least partially flow of fluid; and a fluid outlet side of the lens, adjacent to the end of the immersion lens when the projection optical system member, the lens-side fluid outlet may receive a portion of the fluid flowing in the flow between the end plate and the transparent lens element, the lens-side to form a flow of the fluid layer at least partially.
4、 根据权利要求1所述的浸入式光学投影系统,其特征在于,包括:一晶圓侧流体入口,位于该晶圆基座内,该晶圆侧流体入口可^f吏得一晶圆侧流体流过该透明板与该晶圆之间,以形成该晶圆侧流动流体层;以及一晶圆侧流体出口,位于该晶圆基座内,该晶圆侧流体出口可收来自该透明4反与该晶圆之间的该流动流体,以形成该晶圆侧的流动流体层。 4. The immersion optical projection system according to claim 1, characterized in that, comprising: a fluid inlet side of the wafer, the wafer susceptor positioned within the fluid inlet side of the wafer may be a wafer obtained officials ^ f side fluid flows between the transparent plate and the wafer, the wafer-side to form a layer of fluid flow; and a fluid outlet side of the wafer, located in the base wafer, the wafer-side fluid outlet from the collapsible 4 anti-transparent fluid communication between the flow and the wafer, to form a flow of the fluid layer on the wafer side.
5、 根据权利要求1所述的浸入式光学投影系统,其特征在于:更包括一载具,用于移动该透明板,其中该载具包括相互轴枢地耦合的两个或三个手臂。 5. The immersion optical projection system as claimed in claim 1, characterized in that: further comprising a carrier for moving the transparent plate, wherein the carrier comprises two or three arms each pivotally coupled to the shaft.
6、 一种浸入式光学投影系统,适用于微影制程,包括: 一末端#;片元件;一透明4反,粘着于该末端镜片元件;一镜片侧的静止流体层,位于该末端镜片元件与该透明板之间;一晶圆基座,用于握持一晶圆;以及一晶圓侧的流动流体层,位于该透明板与该晶圓之间,其中该镜片侧的静止流体层与该晶圓侧的流动流体层间具有不同润湿特性。 6, an immersion optical projection system for lithography process, comprising: a tip #; sheet member; a transparent 4 trans, adhered to the end of the lens element; stationary fluid layer a lens side positioned the end of the lens element and between the transparent plate; a wafer pedestal for holding a wafer; and a flow of the fluid layer on the wafer side, positioned between the transparent plate and the wafer, wherein the stationary fluid layer side of the lens having different wetting properties and flow of fluid between the layers of the wafer side.
7、 根据权利要求6所述的浸入式光学投影系统,其特征在于,更包括:一流体入口,在该浸入式光学投影系统使用时邻近于该末端镜片元件,该流体入口可使得一流体流经透明板与晶圆之间, 以形成至少部分的该晶圓侧的流动流体层;以及一流体出口,在该浸入式光学投影系统使用时邻近于该末端镜片元件,该流体出口可接收流动于该透明板与该晶圆间的该部分流体,以形成至少部分的该晶圆侧的流动流体层。 7. The immersion optical projection system as claimed in claim 6, characterized in that, further comprising: a fluid inlet end adjacent to the lens element during the immersion projection optical system, the fluid inlet such that a fluid can flow through between the transparent plate and the wafer, the flow of the fluid layer to form at least a portion of the side of the wafer; and a fluid outlet, when the immersion projection optical system to the end adjacent the lens element, may receive a flow of the fluid outlet the portion of the transparent plate between the fluid and the wafer, to form a flow of the fluid layer at least part of the side of the wafer.
8、 一种集成电路晶片的制造方法,包括下列步骤: 设置一末端镜片元件于一晶圆上,其中于该末端镜片元件与该晶圆间i殳置有一透明丰反,该透明板具有一镜片侧表面与一晶圆侧表面;对该晶圓施行一微影制程;在施行该微影制程时,形成一镜片侧流体于该末端镜片元件与该透明板的该镜片側表面间;以及在施行该微影制程时,形成一晶圆側流体于该透明板的该晶圆侧表面与该晶圆间,其中该镜片侧流体与该晶圆側流体间具有不同润湿特性。 8. A method of manufacturing an integrated circuit wafer, comprising the steps of: providing a lens element on the end of a wafer, wherein the lens element has at the end between the wafer and a transparent counter i Shu anti abundance, the transparent plate has a a lens side surface side of the wafer surface; the purposes of a wafer lithography process; in applying the lithography process, a lens is formed between the side surface and the fluid side of the transparent plate to the end of the lens element of the lens; and in applying the lithography process, a wafer is formed between the wafer and the fluid side, wherein the lens-side fluid between the wafer-side fluid and having different wetting properties to the wafer surface side of the transparent plate.
9、 根据权利要求8所述的集成电路晶片的制造方法,其特征在于:在施行该微影制程时该镜片側流体是静止的,而该晶圆侧流体是流动的。 9. The method of fabricating an integrated circuit wafer according to claim 8, wherein: In applying the lithographic process of the lens-side fluid is stationary, while the wafer-side fluid is flowing.
10、 根据权利要求8所述的集成电路晶片的制造方法,其特征在于:在施行该微影制程时该镜片側流体是流动的,而该晶圆侧流体是静止的。 10. A method of fabricating an integrated circuit wafer according to claim 8, wherein: In applying the lithographic process of the lens-side fluid is flowing, the wafer-side fluid which is stationary.
11、 根据权利要求8所迷的集成电路晶片的制造方法,其特征在于:在施行该微影制程时,该镜片侧流体具有一镜片侧流体速率,该晶圆侧流体具有一晶圓侧流体速率,而该^镜片側流体速率不同于该晶圆侧流体速率。 11. The method of claim fans of manufacturing an integrated circuit wafer in claim 8, wherein: In applying the lithography process, the lens-side fluid having a fluid velocity lens side, the wafer having a wafer side of the fluid side of the fluid rate, and the lens-side fluid ^ rate different than the rate of the fluid on the wafer side.
CN 200510079341 2004-06-23 2005-06-23 Immersion optical projection system and manufacturing method of IC wafer CN100547488C (en)

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US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
CN1501170A (en) 2002-11-18 2004-06-02 Asml荷兰有限公司 Lithographic apparatus and device manufacturing method

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US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
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CN1501170A (en) 2002-11-18 2004-06-02 Asml荷兰有限公司 Lithographic apparatus and device manufacturing method

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