CN100533795C - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
CN100533795C
CN100533795C CNB2007103013944A CN200710301394A CN100533795C CN 100533795 C CN100533795 C CN 100533795C CN B2007103013944 A CNB2007103013944 A CN B2007103013944A CN 200710301394 A CN200710301394 A CN 200710301394A CN 100533795 C CN100533795 C CN 100533795C
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wavelength
light
light emitting
wavelength conversion
conversion material
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CNB2007103013944A
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CN101212015A (en
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崔爀仲
朴光日
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首尔半导体株式会社
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Priority to KR1020060133993A priority patent/KR101297405B1/en
Priority to KR10-2006-0136442 priority
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Abstract

本发明是关于一种发光装置。 The present invention relates to a light emitting device. 所述发光装置包含发光二极管,所述发光二极管设置在衬底上以发射第一波长的光。 The light emitting device comprises a light emitting diode emitting light at a first wavelength diodes disposed on a substrate of the light emission. 透明模制零件封闭所述发光二极管,下部波长转换材料层设置在所述透明模制零件上,且上部波长转换材料层设置在所述下部波长转换材料层上。 A transparent molded part enclose the light emitting diode, a lower portion of the wavelength conversion material layer disposed on the transparent molded part, and the upper wavelength conversion material layer disposed on the lower portion of the wavelength converting material layer. 所述下部波长转换材料层含有用于将所述第一波长的光转换成比所述第一波长长的第二波长的光的磷光体,且所述上部波长转换材料层含有用于将所述第一波长的光转换成第三波长的光的磷光体,所述第三波长比所述第一波长长但比所述第二波长短。 The lower layer containing a wavelength conversion material for light conversion phosphor light of the first wavelength longer than the first wavelength into a second wavelength, and the upper layer contains a wavelength conversion material for the converting said light into a first wavelength of the phosphor light having a third wavelength, the third wavelength longer than the first wavelength but shorter than the second wavelength. 防止经由波长转换产生的光通过所述磷光体而丢失。 Generated by preventing the wavelength conversion light lost by the phosphor. 本发明还揭示包含多层反射镜的发光装置。 The present invention also discloses a light emitting device comprising a multilayer mirror.

Description

技术领域 FIELD

本发明涉及一种发光装置,且更特定来说,涉及一种能够防止从发光二极管发射或经由波长转换产生的光在发光装置内丟失的发光装置。 The present invention relates to a light emitting device, and more particularly, to a light emitting device capable of preventing light emitted from the light emitting diode or wavelength converted via the loss generated in the light emitting device.

背景技术 Background technique

用化合物半导体发光二极管制造的发光装置可实现各种颜色且用于各种应用,包含灯、电子显示板和显示器。 Compound semiconductor light emitting diode device manufactured a variety of colors and can be implemented for a variety of applications, including lights, electronic display boards and display. 特定来说,由于发光装置可实现白光,因此其用于一般照明和液晶显示面板的光源。 In particular, since the light emitting device may implement white light, so the light source panels for general lighting and liquid crystal display.

大体上,可通过蓝发光二极管(blue light emitting diode, LED)与磷光体的组合来获得白光,且在第2002-064220号日本专利早期公开案中揭示基于蓝LED和YAG磷光体实现白光的发光装置的一个实例。 In general, the phosphors may be combined to obtain white light by a blue light emitting diode (blue light emitting diode, LED), and the disclosed implement white light emission of the blue LED and the YAG-based phosphors No. 2002-064220 Japanese Patent Laid-Open Case one example of the device. 然而,此发明的技术通过混合蓝光与黄光而实现白光,且由于缺乏红色波长范围内的光, 而在颜色再现和颜色渲染特性方面展现较弱的属性。 However, the techniques of this invention is achieved by mixing blue and yellow white, and due to the lack of light in the red wavelength range, and exhibit weaker properties in terms of color reproduction and color rendering characteristic. 另一方面,可通过包含蓝LED、绿LED和红LED的三个LED来实现白光,但在此情况下,由于从LED发射的光的波长范围较窄,所以发光装置尽管具有良好的颜色再现能力,但仍展现较弱的颜色渲染特性。 On the other hand, the white light may be achieved by the inclusion of the blue LED, a green LED and a red LED of three LED, but in this case, since the wavelength range of light emitted from the LED is narrow, the light-emitting device having excellent color reproduction although ability, but still showing a weak color rendering properties.

为了解决上述问题,第2004/0207313 Al号美国专利公开案揭示一种发光装置,其包括蓝LED、绿磷光体和红磷光体以实现白光,或者包括红LED 以及蓝LED和磷光体以实现白光。 To solve the above problems, U.S. No. Patent Publication 2004/0207313 Al discloses a light emitting device comprising a blue LED, a green phosphor and red phosphor to implement white light, or a red LED and a blue LED including a phosphor to realize white light and . 根据此发明,通过含有绿磷光体和红磷光体两者的透光性树脂来密封蓝LED,从而实现具有良好颜色再现能力和颜色渲染特性的白光。 According to this invention, the translucent resin containing both the green phosphor and red phosphor to seal the LED blue, thereby realizing white light with good color reproduction capabilities and color rendering properties. 此外,可通过采用蓝LED、绿磷光体和红LED来改进颜色再现能力。 In addition, color reproducibility can be improved by employing a blue LED, a green phosphor and a red LED. 此时,含有绿磷光体的透光性树脂封闭蓝LED,并将从蓝LED发射的光的一小部分转换为绿光。 In this case, the resin comprising the translucent green phosphor closing the blue LED, and a small portion of the converted light emitted from a blue LED is green. 另外,存在发光装置的一个实例, 它包含蓝LED、红LED和紫外LED,使得紫外LED由含有绿磷光体的透光性树脂封闭以实现白光。 Further, the presence of one example of a light emitting device comprising blue LED, the red LED and ultraviolet LED, an ultraviolet LED that in order to achieve a light-transmissive resin containing phosphors of green, white closed.

对于如第2004/0207313 Al号美国专利公开案中揭示的包含蓝LED、绿磷光体和红磷光体的发光装置,由于绿磷光体和红磷光体分散在相同的透光性树脂中,因此从绿磷光体发射的绿光趋于由红磷光体吸收。 For comprises a blue LED, a green phosphor and a red phosphor emitting device as No. U.S. Patent Publication 2004/0207313 Al disclosed, since the green phosphor and a red phosphor dispersed in the same translucent resin, and therefore from green green phosphors tend to absorb emitted by the red phosphor. 大体上, 根据激发的波长,磷光体展现不同的波长转换效率。 In general, according to the wavelength of the excitation of the phosphors exhibit different wavelength conversion efficiency. 举例来说,红磷光体用以执行从蓝LED发射的光向红光的波长转换,且因此展现从蓝光到红光的良好的波长转换效率。 For example, the red phosphor for performing the blue LED light emitted from the wavelength conversion into red light, and thus exhibits good wavelength conversion efficiency from blue to red. 因此,吸收到红磷光体中的绿光的大部分都通过转换为热而丟失。 Thus, heat lost to absorption in the red-green phosphor through conversion most. 因此,在绿磷光体与红磷光体均包含在透光性树脂中的 Thus, the green phosphor and the red phosphor are included in a translucent resin

4情况下,发光装置经历绿光的缺乏,且由于其中丟失大量的光而经历发光效率的降低。 4, the light emitting device subjected to the lack of green, and since the amount of light which undergoes loss reduction in luminous efficiency.

此外,经由磷光体中的波长转换产生的光可再次进入蓝LED。 Further, the light may be generated through wavelength conversion in the phosphor re-enter the blue LED. 在进入蓝LED之后,光通过蓝LED,且可被吸收(且因此丟失)到安装所述蓝LED的衬底的底面中,从而可进一步降低发光效率。 After entering the blue LED, light passes through the blue LED, and may be absorbed (and thus lost) to the bottom surface of the blue LED mounting substrate, whereby light emission efficiency can be further reduced.

对于进一步包含红LED的发光装置,从红LED发射的光的至少一小部分可进入含有磷光体的透光性树脂,且其它部分可进入蓝LED或紫外LED。 For further light-emitting device comprising a red LED, a red LED light emitted from at least a fraction of the translucent resin may enter the phosphor, and may enter other parts of the blue LED or ultraviolet LED. 当红光进入透光性树脂时,光并不激发磷光体,而是由于从磷光体的漫反射而丟失。 When the red light enters the light transmitting resin, light does not excite the phosphor, but since the diffuse reflection from the phosphor lost. 此外,当红光进入蓝LED或短波可见光LED时,其可能由于这些LED内的反射而丢失。 Further, when the red light enters the short-wave visible light or a blue LED LED, which may be due to reflections within these LED lost. 因此,红光的强度减小,这必然需要增加红LED 的数目或红LED的驱动电流以补偿红光强度的减小。 Thus, red light intensity decreases, which necessarily requires an increase of the number of the red LED or red LED drive current is reduced to compensate for the red light intensity.

发明内容 SUMMARY

设计本发明以解决上述常规技术的问题,且本发明的一方面是提供一种能够防止经由波长转换产生的光通过吸收到磷光体中而丢失的发光装置。 The present invention is designed to solve the above problems of the conventional art, and an aspect of the present invention is to provide a wavelength conversion light emitting device via a light generated by absorption into the phosphor can be prevented and loss.

本发明的另一方面是提供一种能够防止经由波长转换产生的光通过重新进入LED而丟失的发光装置。 Another aspect of the present invention is to provide a light emitting device by re-enters the LED lost generated through wavelength conversion can be prevented.

本发明的又一方面是提供一种能够防止从用于发射长波长光的LED发 Yet another aspect of the present invention is to provide a long-wavelength light emission can be prevented from LED for hair

' 根据本发明的一个方面:一种发i装置包含多个波长转换材料层。 'According to one aspect of the present invention: one device comprises a plurality of hair i wavelength conversion material layer. 所述发光装置包含发光二极管,其设置在村底上以发射第一波长的光。 The light emitting device comprises a light emitting diode arranged to emit light at a first wavelength on the bottom of the village. 透明模制零件封闭所述发光二极管,下部波长转换材料层设置在所述透明模制零件上,且上部波长转换材料层设置在所述下部波长转换材料层上。 A transparent molded part enclose the light emitting diode, a lower portion of the wavelength conversion material layer disposed on the transparent molded part, and the upper wavelength conversion material layer disposed on the lower portion of the wavelength converting material layer. 所述下部波长转换材料层含有用于将从发光二极管发射的所述第一波长的光转换成比所述第一波长长的第二波长的光的磷光体,且所述上部波长转换材料层含有用于将从发光二极管发射的所述第一波长的光转换成比第一波长 The lower layer contains the material for wavelength conversion of the light emitted from the light emitting diode into a first wavelength longer than the first wavelength to the second wavelength phosphor light, and the wavelength conversion material of the upper layer converting light containing the first wavelength from the light emitting diode for emitting a first wavelength than the

长的第三波长的光的磷光体。 Phosphor light having a third wavelength longer. 这里,第三波长比所述第二波长短。 Here, the third wavelength is shorter than the second wavelength. 因此, therefore,

丢失。 Lost. 此外,透明模制零件插入在所述下部波长转换材料层与发光二极管之间,以便防止经由波长转换产生的光重新进入发光二极管,借此减少光损失。 Further, the transparent molded part is inserted between the lower wavelength conversion material layer with the light emitting diode, so as to prevent light generated through wavelength conversion re-enter the light emitting diode, thereby reducing light loss.

所述透明模制零件、所述下部波长转换材料层以及所述上部波长转换材料层可具有相同折射率,或可具有按此次序增加的折射率。 The transparent molded part, the lower wavelength conversion material layer, and the upper wavelength converting material layer may have the same refractive index, in this order, or may have an increased refractive index. 因此,可防止从发光二极管发射的光由于全内反射而丟失。 This can prevent the light emitted from the light emitting diode due to total internal reflection loss.

下部波长转换材料层可包含至少一个开口,所述透明模制零件通过所 A lower portion of the wavelength converting material layer may comprise at least one opening through said transparent molded part by

5述开口暴露。 Said opening 5 is exposed. 所述开口填充有所述上部波长转换材料层。 The upper opening is filled with the wavelength converting material layer. 因此,从发光二 Thus, the light emitting

转换材料层,、以激发上部i长转换;料层中含有的磷:光体、。 ,, conversion material layer to the upper portion of the excitation wavelength conversion i; phosphor layers contained: light. ;' ; '

所述第一波长的光可为蓝光,所述第二波长的光可为红光,且所述第三波长的光可为绿光,从而实现白光。 The light of the first wavelength may be blue light, the second wavelength light may be red light and the third wavelength may be a green light, thereby realizing white light.

模具模制而成,使得其可以多种形状产生。 Mold molded, so that it can produce a variety of shapes. 一:' —D A: '-D

的硬度。 Hardness. 此外,上部波长转换材料层可具有比下部波长转换材料层高的硬度。 Further, the upper wavelength conversion material layer may have a wavelength conversion material than the lower storey hardness. 举例来说,透明模制零件可由硅树脂形成,且上部波长转换材料层和下部波长转换材料层可由环氧树脂形成。 For example, transparent molded part may be formed of silicone, and the upper wavelength conversion material layer and the lower wavelength conversion material layer may be formed of epoxy resin.

下部介电多层反射镜可插入在所述透明模制零件与所述下部波长转换材料层之间,且上部介电多层反射镜可插入在所述下部波长转换材料层与所述上部波长转换材料层之间。 Lower dielectric multilayer mirror may be inserted between the transparent molded part and the lower wavelength conversion material layer, and the upper dielectric multilayer mirror may be inserted in the lower portion of the wavelength conversion material layer and the upper wavelength conversion between the material layers. 下部介电多层反射镜可通过重复沉积具有较高折射率的介电层以及具有较低折射率的介电层而形成,从而展现高反射。 Lower dielectric mirror may have a multilayer by repeatedly depositing a dielectric layer having a higher refractive index and lower refractive index dielectric layer is formed so as to show a high reflectance. 因此,防止经由上部波长转换材料层中的波长转换产生的第三波长的光进入下部波长转换材料层,且防止经由下部波长转换材料层中的波长转换产生的第二波长的光进入透明模制零件。 This prevents the third wavelength of light generated by the wavelength conversion material, an upper portion of the wavelength conversion layer into the lower wavelength conversion material layer, and to prevent the second wavelength of light generated by the wavelength conversion in a lower portion of the wavelength conversion material layer enters the transparent molded Components.

所述下部介电多层反射镜中的介电层中的每一者可具有满足 Each of the lower dielectric layer in a multilayer dielectric mirror may have a satisfying

(2m-l)X2/4n2 (其中112指示所述介电层每一者的折射率,^指示所述第二波长,且m指示大于或等于1的整数)关系的厚度,且所述上部介电多层反射镜中的介电层中的每一者可具有满足(2k-l)?t3/4n3 (其中n3指示所述介电层每一者的折射率,人3指示所述第三波长,且k指示大于或等于1的整数) 关系的厚度。 (2m-l) X2 / 4n2 (where 112 indicates the refractive index of each of the dielectric layer, ^ indicates the second wavelength, and m indicates an integer greater than or equal to 1) the relationship between the thickness and the upper each of the dielectric layer of the dielectric multilayer mirrors may have a satisfying (2k-l)? refractive index (n3 indicate where each of the dielectric layer t3 / 4n3, indicating that the first person 3 the three-wavelength, and k indicates greater than or equal to the thickness relationship integer). 优选地,各个关系中的m和k为l。 Preferably, each of m and k in relation to l.

另外,下部波长转换材料层可具有至少一个开口,所述透明;漠制零件通过所述开口暴露,且所述开口可填充有所述上部波长转换材料层。 Further, the lower portion of the wavelength converting material layer may have at least one opening, said transparent; desert molded part exposed through the opening, and the upper opening may be filled with the wavelength converting material layer. 此时, 上部介电多层反射镜可延伸到所述开口中,以插入在所述开口中的所述透明模制零件与所述上部波长转换材料层之间。 In this case, the upper dielectric multilayer mirror may extend into the opening, to insert in the opening between the transparent molded part and the upper wavelength conversion material layer.

根据本发明的另一方面, 一种发光装置包含介电多层反射镜。 According to another aspect of the present invention, a light emitting device comprising a dielectric multilayer mirror. 所述发光装置包含第一发光二极管,其设置在衬底上以发射第一波长的光。 The light emitting device includes a first light emitting diode, which is arranged to emit a first wavelength of light on the substrate. 波长转换材料封闭所述第一发光二极管。 Closing the first wavelength converting material is a light emitting diode. 所述波长转换材料含有用于对从所述第一发光二极管发射的光的一小部分执行波长转换的磷光体。 The wavelength conversion material comprises a phosphor for wavelength conversion is performed on a small portion of the light emitted from the first light emitting diode. 第二发光二极管与所述波长转换材料分离且设置在所述衬底上。 The second light emitting diode and the wavelength conversion material is separated and disposed on the substrate. 所述第二发光二极管发射比所述第一波长长的第二波长的光。 The second light emitting diode emits a first wavelength longer than the second wavelength. 介电多层反射镜形成于所述波长转换材料上。 A dielectric multilayer mirror is formed on the wavelength conversion material. 所述介电多层反射镜包含至少一对介电层,其中一个介电层具有较高折射率且另一介电层具有较低折射率,且反射入射在所述波长转换材料上的所述第二波长的光。 The multilayer dielectric mirror comprising at least one dielectric layer, wherein the dielectric layer has a higher refractive index and another dielectric layer having a lower refractive index, and the reflection is incident on the wavelength converting material said second wavelength of light. 因此,可防止从第二发光二极管发射的光进入波长转换材料并在其中丟失,借此改进第二波长的光的发光效率。 Thus, it is possible to prevent the light emitted from the second light emitting diode and enters the wavelength conversion material which is lost, thereby improving the light emission efficiency of the light of the second wavelength.

所述介电层中的每一者可具有满足d = (2m-l)X/4n (其中n指示所述介电层每一者的折射率,人指示所述第二波长,且m指示大于或等于l的整数)关系的厚度"d"。 Each of the dielectric layers may have satisfies d = (2m-l) X / 4n (where n indicates the refractive index of each of said dielectric layer, said second wavelength indicating people, and m indicates thickness is an integer greater than or equal to l) "d". 优选地,m为1。 Preferably, m is 1.

发光装置可进一步包含密封树脂,其封闭所述波长转换材料和所述第二发光二极管。 The light emitting device may further comprise a sealing resin, which closes said second wavelength converting material and the light emitting diode. 此时,所述密封树脂的折射率可低于所述具有较高折射率的介电层。 At this time, the sealing resin is lower than the refractive index of the dielectric layer having a higher refractive index.

在一些实施例中,发光装置可进一步包含另一第二发光二极管,其以所述第一发光二极管为中心与所述第二发光二极管对称。 In some embodiments, the light emitting device may further comprise a second light emitting diode to another, which is centered on the first LED and the second LED symmetric. 如此,由于第二发光二极管围绕第一发光二极管对称设置,因此发光装置可实现具有均匀亮度的混合光。 Thus, since the second light-emitting diodes arranged symmetrically around the first light emitting diode, the light emitting device may be implemented with uniform brightness of the mixed light.

在一些实施例中,介电多层反射镜可部分形成于所述波长转换材料上。 In some embodiments, a dielectric multilayer mirror may be partially formed on the wavelength converting material. 因此,从第二发光二极管发射的光在其进入波长转换材料时可由反射镜反射,且也可减少从第一发光二极管发射的光以及经由磷光体的波长转换产生的光的损失(可能由反射镜引起)。 Accordingly, emitted from the second light emitting diode can be reflected by the mirror when it enters the wavelength conversion material, and may also reduce the loss of light and light generated through wavelength conversion phosphor emitted from the first light emitting diode (probably reflected by the mirror cause).

波长转换材料可为形成于所述发光二极管上且具有均匀厚度的材料层。 Wavelength converting material may be formed on the light emitting diode and a material layer having a uniform thickness.

第一发光二极管可发射具有490 nm或更小峰值波长的蓝光或紫外射线,且第二发光二极管可发射具有580 nm或更大峰值波长的红光。 The first light emitting diode may emit light having 490 nm or less, the peak wavelength of blue light or ultraviolet rays, and the second light emitting diode may emit red light having a peak wavelength of 580 nm or more.

附图说明 BRIEF DESCRIPTION

通过下文结合附图给出的对优选实施例的描述,将明了本发明的上述和其它目的、特征以及优点,附图中: Description of the preferred embodiments given hereinafter in conjunction with the accompanying drawings, the above and other objects will be apparent to the present invention, features and advantages of the drawings in which:

图1是根据本发明第一实施例的包含多个波长转换材料层的发光装置的横截面图。 1 is a cross-sectional view of a light emitting device comprising a plurality of wavelength conversion material layer of the first embodiment of the present invention.

图2是冲艮据本发明第二实施例的包含多个波长转换材料层的发光装置的横截面图。 FIG 2 is a cross-sectional view Burgundy red light emitting device according to a second embodiment of the present invention comprises a plurality of wavelength converting material layer.

图3是根据本发明第三实施例的包含多个波长转换材料层的发光装置的横截面图。 FIG 3 is a cross-sectional view of a light emitting device comprising a plurality of wavelength conversion material layer of the third embodiment of the present invention.

图4是根据本发明第四实施例的包含介电多层反射镜的发光装置的橫截面图。 FIG 4 is a cross-sectional view of a light emitting device comprises a dielectric multilayer mirror to a fourth embodiment of the present invention.

图5是图4的A部分的部分放大横截面图。 FIG 5 is a part A of FIG. 4 an enlarged cross-sectional view.

图6是根据本发明第五实施例的包含介电多层反射镜的发光装置的横截面图。 FIG 6 is a cross-sectional view of a light emitting device comprises a dielectric multilayer mirror according to a fifth embodiment of the present invention.

图7是根据本发明第六实施例的包含介电多层反射镜的发光装置的横 FIG. 7 is a cross-emitting device comprising a dielectric multilayer mirror to the sixth embodiment of the present invention according to

7截面图。 7 a sectional view.

图8是根据本发明笫七实施例的包含介电多层反射镜的发光装置的横截面图。 FIG 8 is a cross-sectional view of a light emitting device comprises a dielectric multilayer mirror in accordance with an embodiment of the invention seven Zi.

具体实施方式 Detailed ways

下文中将参看附图详细描述本发明的示范性实施例。 Hereinafter the present invention in detail with reference to the exemplary embodiments described in the accompanying drawings. 仅以说明方式给出以下实施例以帮助所属领域的技术人员完全理解本发明的精神。 Given by way of illustration only, the following examples are presented to help skilled in the art will fully understand the spirit of the present invention. 因此, 应注意本发明不限于本文描述的实施例,且可以各种形式来实现。 Thus, it should be noted that the present invention is not limited to the embodiments described herein, and may be implemented in various forms. 此外, 图式没有精确按比例绘制,且其中的组件可能在厚度、宽度、长度等方面夸大。 Furthermore, the drawings do not accurately drawn to scale, and wherein the components may be exaggerated in thickness, width, length and the like. 本文中,类似或相同的参考标号在全部图中将表示类似或相同的组件。 Herein, the similar or identical reference numerals refer to similar or identical components in the entire FIG.

图1是根据本发明第一实施例的包舍多个波长转换材料层的发光装置的横截面图。 FIG 1 is a cross sectional view of a light emitting device of the plurality of wavelength converting material layer according to a first embodiment of the package round the present invention.

参看图1,发光二极管(light emitting diode, LED) 23安装在衬底20 上。 Referring to Figure 1, a light emitting diode (light emitting diode, LED) 23 is mounted on the substrate 20. 衬底20可为印刷电路板20,在此实施例中,其包含引线电极21a和21b。 The substrate 20 may be a printed circuit board 20, in this embodiment, the lead comprising electrodes 21a and 21b. 然而,其可选自包含引线框、散热片、塑料封装体等的任何衬底而不限于特定的衬底,只要其允许发光二极管安装在上面即可。 However, any substrate which optionally contains from a lead frame, a heat sink, a plastic package, etc. without being limited to a particular substrate, as long as it allows the light emitting diode can be mounted thereon. 可通过在由例如蓝宝石、碳化硅、尖晶石或类似物形成的衬底上生长基于氮化镓铟的化合物半导体层而形成发光二极管,且其可发射紫外射线或蓝光作为第一波长的光。 Growth, for example, by a light layer of indium gallium nitride-based compound semiconductor light emitting diode formed on a substrate of sapphire, silicon carbide, spinel or the like formed by, and which can emit blue light or ultraviolet radiation at the first wavelength .

LED23可经由导电粘合剂(未图示)附接到引线电极21a且通过结合线电连接到引线电极21b。 LED23 can (not shown) is attached via a conductive adhesive to lead electrodes 21a and 21b are connected to the lead electrodes through bonding wires electrically. 或者,LED 23可通过两个结合线电连接到引线电极21a和21b,或可附接到子基座(未图示)并经由子基座电连接到引线电极21a和21b。 Alternatively, LED 23 may be electrically connected by bonding wires to the two lead electrodes 21a and 21b, or may be attached to the sub-base (not shown) and connected to the lead electrodes 21a and 21b via the submount electrically.

透明模制零件25形成于衬底20上以封闭LED 23。 A transparent molded part 25 is formed on the substrate 20 to enclose the LED 23. 透明模制零件25 可形成以封闭结合线。 A transparent molded part 25 may be formed in a closed bond line. 透明模制零件25可由具有相对低硬度的树脂(例如, 硅树脂)形成。 A transparent molded part 25 may be formed of a resin having a relatively low hardness (e.g., silicone resin). 透明模制零件25不含磷光体,从而可防止已从LED 23进入透明模制零件25的光在经受LED 23附近的波长转换之后重新进入LED 23。 Transparent molded parts free of the phosphor 25, so as to prevent light from the LED 23 enters the transparent molded part 25 re-enters the LED 23 in the vicinity of the LED 23 after being subjected to wavelength conversion.

下部波长转换材料层27设置在透明模制零件25上。 A lower wavelength conversion material layer 27 disposed on the transparent molded part 25. 下部波长转换材料层27含有能够将从LED 23发射的第一波长的光转换成第二波长的光的磷光体。 A lower layer 27 containing a wavelength conversion material can be converted from light of a first wavelength emitted by the LED 23 to the phosphor light of the second wavelength. 笫二波长的光比第一波长更长。 Undertaking of two wavelengths of light longer than the first wavelength. 举例来说,如果第一波长的光为紫外射线或蓝光,那么第二波长的光可为红光。 For example, if the light of the first wavelength is ultraviolet radiation or blue light, the second wavelength may be a red light. 因此,从LED23发射的第一波长的光的一部分通过下部波长转换材料层27中包含的磷光体转换成笫二波长的光。 Thus, part of the light emitted from the first wavelength into light LED23 undertaking of two wavelengths through a lower portion of the phosphor wavelength conversion material layer 27 contains.

此外,上部波长转换材料层29设置在下部波长转换材料层27上。 Further, the upper wavelength conversion material layer 29 disposed on the lower wavelength conversion material layer 27. on

8部波长转换材料层27含有能够将从LED 23发射的第一波长的光转换为第三波长的光的磷光体。 Wavelength conversion material layer 27 containing 8 from the LED 23 can be emitted first wavelength light conversion phosphor for a third wavelength of light. 第三波长的光比第一波长更长,但比第二波长的光短。 A first optical wavelengths than the third wavelength is longer, but shorter than the second wavelength. 举例来说,如杲第二波长的光为红光,那么第三波长的光可为绿光。 For example, as Gao second wavelength red light, the third wavelength light may be green light. 由于磷光体一般由激发光激发并发射具有比激发光长的波长的光,因 Since the phosphor is excited by the excitation light and generally emit light having a longer wavelength than the excitation light, because

此,经由下部波长转换材料层27中包含的磷光体中的波长转换产生的第二 Here, via a lower wavelength of the phosphor layer 27 in the wavelength conversion material contained in the second conversion yields

长的波长,且因此无法激发上部波长转换材料层29中含有的磷光体。 Long wavelengths, and thus can not excite the phosphor layer 29 an upper wavelength conversion material contained. 因此, 经由下部波长转换材料层27中的波长转换产生的第二波长的光可在透射过上部波长转换材料层29之后发射到外部。 Thus, the second wavelength converted light generated by the wavelength conversion material layer 27 may be a lower wavelength transmitted through the upper portion of the wavelength conversion material layer 29 after emitted to the outside.

上部波长转换材料层29和下部波长转换材料层27可由与透明模制零件25相同的材料形成,但不限于此,且其可由与透明模制零件25不同的材料形成。 The upper portion 29 and the wavelength conversion material layer 27 may be formed of the same transparent material of the lower molded part 25 forming a wavelength conversion material layer, but is not limited thereto, and it may be formed of a transparent molded parts 25 of different materials. 此时,下部波长转换材料层27优选由具有比透明模制零件25 高的折射率的材料形成。 At this time, the lower portion of the wavelength conversion material layer 27 is preferably formed of a material having a refractive index higher than that of the transparent molded part 25. 此外,上部波长转换材料层29可由具有与下部波长转换材料层27相同或更高折射率的材料形成。 Further, the upper wavelength conversion material layer 29 may be formed to have the same wavelength conversion material layer 27 a lower or higher refractive index material. 因此,可防止从LED23 发射的光由于透明模制零件25与下部波长转换材料层27之间的界面或下部波长转换材料层27与上部波长转换材料层29之间的界面引起的全内反射而丢失。 This can prevent light emitted from LED23 due to total internal reflection at the interface between the transparent wavelength or a lower molded part 25 and the lower portion of the wavelength conversion material layer 27 conversion material layer 27 and the upper portion of the interface between the wavelength conversion material layer 29 caused by the lost. 此外,可减少经由通过上部波长转换材料层29和下部波长转换材料层27的波长转换产生的向内的光的重新进入。 Further, light can be reduced by inwardly through the upper wavelength conversion material layer 29 and a lower wavelength of the wavelength conversion material layer 27 resulting from the conversion of the re-enter.

另外,上部波长转换材料层29和下部波长转换材料层27可由硬度比透明模制零件25高的材料形成。 Further, the upper wavelength conversion material layer 29 and the lower wavelength conversion material layer 27 may be formed in hardness than the transparent molded part 25 high material. 举例来说,当透明模制零件25由硅树脂形成时,上部波长转换材料层29和下部波长转换材料层27可由含有各自磷光体的环氧树脂形成。 For example, when the transparent molded part 25 is formed of a silicone resin, the upper wavelength conversion material layer 29 and the lower wavelength conversion material layer 27 may be an epoxy resin containing each phosphor is formed. 通过此配置,可防止透明模制零件25与衬底20 分离,同时保护LED不受外力损坏。 With this configuration, the separation 20 prevents the transparent substrate 25 and the molded part, while protecting the LED from external damage. . .

根据此实施例,含有用于将例如蓝光转换为红光的磷光体的下部波长转换材料层27设置在发射蓝光的LED 23上,且含有用于将蓝光转换为绿光的磷光体的上部波长转换材料层29设置在下部波长转换材料层27上, 借此实现白光。 According to this embodiment, for example, containing 27 to convert the blue light is provided a lower wavelength red phosphor conversion material layer on the blue light-emitting LED 23, and comprising an upper portion for converting the blue light into green light of a wavelength of a phosphor conversion material layer 29 is disposed on the lower wavelength conversion material layer 27, thereby to achieve white light. 或者,当LED23发射紫外射线时,发光装置包含:下部波长转换材料层27,其中含有用于将紫外射线转换为红光的磷光体;上部波长转换材料层29,其中含有用于将紫外射线转换为绿光的磷光体;以及额外波长转换材料层(未图示),其中含有用于将紫外射线转换为蓝光的磷光体,借此实现白光。 Alternatively, when LED23 emitting ultraviolet radiation, the light emitting device comprising: a lower wavelength conversion material layer 27, which comprises means for converting UV radiation into the red phosphor; upper wavelength conversion material layer 29, which comprises means for converting UV radiation as a green phosphor; and additional wavelength material layer (not shown), which comprises means for converting UV radiation into blue phosphor conversion, thereby realize white light.

透明模制零件25以及上部波长转换材料层29和下部波长转换材料层27可具有(但不限于)梯形横截面。 A transparent molded part 25 and the upper wavelength conversion material layer 29 and the lower wavelength conversion material layer 27 may have a trapezoidal cross-section (but not limited). 透明模制零件25以及上部波长转换材料层29和下部波长转换材料层27可使用例如转移模制的模制技术经由模具而产生。 A transparent molded part 25 and the upper wavelength conversion material layer 29 and the lower wavelength conversion material layer 27 may be, for example, transfer molding using molding techniques through a die to produce. 因此,透明模制零件25以及上部波长转换材料层29和下部波 Thus, the transparent molded part 25 and the upper wavelength conversion material layer 29 and the lower wave

9上部波长转换材料层29和下部波长转换材料层27中含有的磷光体不限于特定种类的磷光体,且可包含例如基于YAG的磷光体、基于硅酸盐的磷光体、基于硫代镓酸盐的磷光体等。 9 upper wavelength conversion material layer 29 and the lower wavelength conversion material layer 27 containing the phosphor is not limited to a particular kind of the phosphor, and may comprise, for example, a YAG-based phosphor, silicate-based phosphors, based thio gallate salt as phosphors. 特定来说,磷光体可为含有铅或铜的化合物,例如含有铅和铜的硅酸盐磷光体,如第10-2005-0117164号韩国专利早期公开案中所揭示。 In particular, the phosphor may be a compound containing lead or copper, for example, a silicate phosphor containing lead and copper, as Korean Patent No. 10-2005-0117164 disclosed in earlier publications.

图2是根据本发明第二实施例的包含多个波长转换材料层的发光装置的横截面图。 FIG 2 is a cross-sectional view of a light emitting device comprising a plurality of wavelength converting material layer according to the second embodiment of the present invention.

参看图2,根据此实施例的发光装置具有与图1所说明的发光装置的配置相同的一般配置,不同之处在于第二实施例的下部波长转换材料层27包含开口27a。 Referring to Figure 2 the light emitting device, according to this embodiment has the same configuration as the light emitting device illustrated in Figure 1 the general configuration, except that the lower portion of the second embodiment of the wavelength conversion material layer 27 includes an opening 27a. 开口27a暴露透明模制零件25且填充有上部波长转换材料层29。 Exposing the opening 27a and the transparent molded part 25 is filled with an upper layer 29 is a wavelength conversion material.

因此,从LED23发射的光的一小部分进入开口27a中的上部波长转换材料层29,而不会通过下部波长转换材料层27。 Thus, a small portion of the emitted light from LED23 inlet opening 27a in the upper portion of the wavelength conversion material layer 29, rather than through the lower wavelength conversion material layer 27. 因此,激发上部波长转换材料层29中的磷光体的光的量可增加。 Thus, the amount of excitation light of the phosphor 29 in the upper portion of the wavelength conversion material layer can be increased.

下部波长转换材料层27可具有多个开口27a,且所述多个开口27a可分散在其中,以均匀地激发上部波长转换材料层29中的磷光体。 A lower wavelength conversion material layer 27 may have a plurality of openings 27a, 27a and the plurality of openings may be dispersed therein to uniformly excite the phosphor upper wavelength conversion material layer 29.

图3是根据本发明第三实施例的包含多个波长转换材料层的发光装置的横截面图。 FIG 3 is a cross-sectional view of a light emitting device comprising a plurality of wavelength conversion material layer of the third embodiment of the present invention.

参看图3,此实施例的发光装置包含安装在衬底20上的LED23、设置成封闭LED 23的透明模制零件25,以及透明模制零件25上的下部波长转换材料层27和上部波长转换材料层29。 Referring to Figure 3, the upper portion 27 and the wavelength conversion light emitting device of this embodiment comprises LED23 mounted on the substrate 20, disposed on the lower portion 25 closed wavelength LED 23 is a transparent molding part 25, and a transparent molded part conversion material layer material layer 29. 这里,在透明模制零件25与下部波长转换材料层27之间形成下部介电多层反射镜26,且在下部波长转换材料层27与上部波长转换材料层29之间形成上部介电多层反射镜28。 Here, between the transparent molded part 25 and the lower portion of the wavelength conversion material layer 27 lower dielectric multilayer mirror 26 is formed, and an upper portion 27 and the wavelength conversion material layer is formed between the upper dielectric multilayer 29 at a lower wavelength conversion material layer mirror 28.

下部介电多层反射镜26包含至少一对低折射率介电层26a和高折射率介电层26b。 Lower dielectric multilayer mirror 26 includes at least one low refractive index dielectric layer 26a and the high refractive index dielectric layer 26b. 这里,下部波长转换材料层27具有比高折射率介电层26b低的折射率。 Here, the lower portion of the wavelength conversion material layer 27 than the high-refractive index dielectric having a low refractive index layer 26b. 反射镜26包含所述至少一对低折射率介电层26a和高折射率介电层26b,其每一者具有满足(2m-l)、/4n2(其中n2指示每一介电层的折射率,A^指示第二波长,且m指示大于或等于1的整数)关系的厚度,以反射第二波长的光。 The mirror 26 comprises at least one pair of a low refractive index dielectric layer 26a and the high refractive index dielectric layer 26b, each having satisfies (2m-l), / 4n2 (n2 indicates a refractive wherein each dielectric layer rate, a ^ indicates a second wavelength, and m indicates an integer equal to or greater than a thickness of 1) relationship at a second wavelength of the reflected light. 优选地,每一介电层的厚度为X2/4n2,即,m在(2m-l)^/4ri2 的关系中为l。 Preferably, the thickness of each dielectric layer is X2 / 4n2, i.e., m in the (2m-l) Relationship ^ / 4ri2 for the l. 在堆叠的介电层26a和26b的对数目增加时,反射镜26相对于第二波长的光的反射增加。 When increasing the number of the dielectric layers 26a and 26b of the stack, the reflection mirror 26 with respect to the increase in the light of the second wavelength. 同时,反射镜26相对于从LED 23发射的光展现透光特性。 Meanwhile, the mirror 26 with respect to the light emitted from the LED 23 exhibit light transmitting characteristics.

此外,上部介电多层反射镜28包含至少一对低折射率介电层28a和高折射率介电层28b。 Further, the upper dielectric multilayer mirror 28 includes at least one low refractive index dielectric layer 28a and the high refractive index dielectric layer 28b. 上部波长转换材料层29具有比高折射率介电层28b低 An upper wavelength conversion material layer 29 having high and low refractive index dielectric layer 28b

10的折射率。 The refractive index of 10. 反射镜28也包含所述至少一对低折射率介电层28a和高折射率介电层28b,其每一者具有满足(2k-l)X3/4n3 (其中n3指示每一介电层的折射率,人3指示第三波长,且k指示大于或等于1的整数)关系的厚度,以反射第三波长的光。 The mirror 28 also comprises at least one pair of a low refractive index dielectric layer 28a and the high refractive index dielectric layers 28b, each having satisfies (2k-l) X3 / 4n3 (n3 indicates where each dielectric layer refractive index, indicating that the third wavelength 3 people, and k indicates an integer equal to or greater than a thickness of 1) relationship at a third wavelength of the reflected light. 优选地,每一介电层的厚度为X3/4n3,即,k在(2k-l)、/4n3 的关系中为l。 Preferably, the thickness of each dielectric layer was X3 / 4n3, i.e., k in the (2k-l), the relationship / 4n3 as a l. 在堆叠的介电层28a和28b的对数目增加时,反射镜28相对于第三波长的光的反射增加。 When increasing the number of the dielectric layers 28a and 28b of the stack, the reflection mirror 28 with respect to the third wavelength light is increased. 另一方面,反射镜28相对于第二波长的光和从LED 23发射的光展现透光特性。 On the other hand, the mirror 28 with respect to the wavelength of light and the second light emitted from the LED 23 exhibit light transmitting characteristics.

因此,通过上部介电多层反射镜28防止经由上部波长转换材料层29 中的波长转换产生的第三波长的光进入下部波长转换材料层27,且通过下部介电多层反射镜26防止经由下部波长转换材料层27中的波长转换产生的第二波长的光进入透明模制零件25。 Accordingly, the upper dielectric multilayer mirror 28 to prevent the light of the third wavelength generated by the wavelength conversion upper wavelength conversion material layer 29 into the lower wavelength conversion material layer 27, and through the lower dielectric multilayer mirror 26 via prevented second wavelength of light in the wavelength conversion material layer 27 a lower portion of the wavelength conversion yields a 25 enters the transparent molded part.

在此实施例中,下部波长转换村料层27也可具有形成于其中的开口, 如图2所示,且所述开口可填充有上部波长转换材料层29。 In this embodiment, the lower portion of the wavelength conversion layers village 27 may also have an opening formed therein, as shown in FIG. 2, and the opening may be filled with an upper layer 29 is a wavelength conversion material. 此时,上部介电多层反射镜28可延伸进入开口,以插在开口中的上部波长转换材料层29 与透明模制零件25之间。 In this case, the upper dielectric multilayer mirror 28 may extend into the openings to the upper portion is inserted in the opening 29 and the wavelength conversion material layer 25 between the transparent molded parts.

图4是根据本发明第四实施例的包含介电多层反射镜的发光装置的横截面图。 FIG 4 is a cross-sectional view of a light emitting device comprises a dielectric multilayer mirror to a fourth embodiment of the present invention.

参看图4,发光装置包含发射第一波长的光的第一LED 51,例如位于衬底50上的发射具有4卯nm或更小峰值波长的蓝光的蓝LED。 Referring to Figure 4, the light emitting device comprises a first wavelength of light emitted from the first LED 51 is, for example, on the substrate 50 positioned emission having 4 or smaller d nm peak wavelength of the blue LED blue light. 衬底50与图1所示的实施例的衬底20相同。 The same as the substrate 50 of the embodiment shown in FIG. 1 and the substrate 20. 此外,可通过在由例如蓝宝石、碳化硅、 尖晶石或类似物形成的衬底上生长基于氮化镓铟的化合物半导体层来形成第一LED51。 Furthermore, growth may be, for example, be formed by a first LED51 layer of indium gallium nitride-based compound semiconductor on a sapphire substrate, silicon carbide, spinel or the like is formed by.

形成波长转换材料55以封闭蓝LED 51 。 A wavelength conversion material 55 is formed to close the blue LED 51. 波长转换材料55含有能够将从蓝LED 51发射的蓝光的一小部分转换成其它波长的光(例如,绿光或黄光)的磷光体。 Comprising wavelength conversion material 55 can be converted from the blue LED 51 emitted blue light into a small portion of light of other wavelengths (e.g., green or yellow) phosphors. 可通过固化透明树脂(例如,硅树脂或环氧树脂)来形成波长转换材料55。 55 may be formed by curing a wavelength conversion material transparent resin (e.g., silicone or epoxy). 波长转换材料55可具有如图4所示的半球形形状,但不限于此,且可以包含矩形形状、梯形形状等的多种形状形成。 Wavelength converting material 55 may have a hemispherical shape as shown in FIG. 4, but is not limited thereto, and various shapes may comprise a rectangular shape, a trapezoidal shape or the like is formed.

图5是图4的A部分的部分放大横截面图。 FIG 5 is a part A of FIG. 4 an enlarged cross-sectional view.

同时参看图5,介电多层反射镜60形成于波长转换材料55上。 See also FIG. 5, a dielectric multilayer mirror 60 is formed on the wavelength converting material 55. 反射镜60包含至少一对介电层61和63,其中介电层61具有较高折射率且介电层63具有较低折射率。 Reflecting mirror 60 includes at least one pair of dielectric layers 61 and 63, the dielectric layer 61 having a higher refractive index and a dielectric layer 63 having a lower refractive index. 介电多层反射镜60可具有通过将高折射率介电层61a 和61b与低折射率介电层63a和63b的多个对60a和60b堆叠若干次而准备的堆叠结构。 A dielectric multilayer mirror 60 may have a high refractive index by the dielectric layer 61a and a plurality of stacked structure and low refractive index dielectric layers 63a and 63b to 60a and 60b are stacked several prepared 61b.

此外,发光装置包含第二LED 53,例如红LED53,其设置在衬底50 上且与波长转换材料55间隔开。 Further, the light emitting device comprises a second LED 53, the LED 53 such as red, and is provided with a wavelength converting material 55 spaced apart on substrate 50. LED 53发射比第一波长长的第二波长的光。 LED 53 than the first light emission wavelength of a second long. 红LED 53由基于磷化铟镓或基于砷化镓的化合物半导体形成以发射具 Based on the red LED 53 is formed of InGaP or GaAs-based compound semiconductor to transmit with

ii有580〜680 nm范围内的峰值波长的光,且可设置成与蓝LED 51共面。 ii light has a peak wavelength in the range of 580~680 nm, and may be disposed coplanar with the blue LED 51.

可设置密封树脂70以封闭红LED 53和波长转换材料55。 The sealing resin 70 may be provided to enclose the red LED 53 and the wavelength conversion material 55. 可通过固化例如硅树脂或环氧树脂的树脂来形成密封树脂70,且通过具有能够满足改进观看角度和发光效率要求的任何形状的模具杯来形成密封树脂70。 The sealing resin 70 may be formed by curing a resin such as silicon resin or epoxy resin, and the sealing resin 70 is formed by a mold having a cup of any shape to meet the viewing angle and improvement of light emission efficiency requirements. 密封树脂70具有比高折射率介电层61低的折射率。 The sealing resin 70 having a refractive index lower than the high dielectric layer 61 the refractive index.

从红LED 53发射到密封树脂70中的红光在各个方向上行进。 70 travels from a red LED emitting red light to the sealing resin 53 in various directions. 一些红光被引向波长转换材料55并到达反射镜60。 Some red light is directed to the wavelength converting material 55 and reaching the reflecting mirror 60. 由于反射镜60形成为具有相对于红光较高的反射,因此反射镜60反射红光。 Since the reflecting mirror 60 is formed to have a high reflectivity with respect to red light, the reflection mirror 60 reflects red light. 反射镜60包含至少一对高折射率介电层61和低折射率介电层63,其每一者具有满足d = (2m-l)X/4n (其中n指示每一介电层的折射率,X指示从红LED发射的光的波长,且m 指示大于或等于l的整数)关系的厚度"d"以反射红光。 Reflecting mirror 60 includes at least one high refractive index dielectric layers 61 and low refractive index dielectric layer 63, each of which satisfies d = (2m-l) X / 4n (where n indicates the refractive each dielectric layer rate, X indicates a wavelength of light emitted from a red LED, and m indicates the thickness "d" is greater than or equal to the integer l) relationship to reflect red light. 优选地,每一介电层的厚度为d=V4n,即,m在(2m-l)A/4n的关系中为1。 Preferably, the thickness of each dielectric layer is d = V4n, i.e., m the relationship (2m-l) A / 4n 1 in. 在堆叠的介电层61 和63的对数目增加时,镜相对于红光的反射增加。 When the increase of stacked dielectric layers 61 and the number 63 of the mirror with respect to the red light reflection increases. 另一方面,反射镜60 相对于从蓝LED 51发射的光或相对于经由波长转换材料55中磷光体的波长转换产生的光展现透光特性。 On the other hand, the mirror 60 with respect to the light emitted from the blue LED 51 or light 55 exhibits wavelength transmission characteristics in the wavelength conversion phosphor material through the conversion yields with respect to

因此,防止从红LED 53发射的红光进入波长转换材料55,借此可防止红光在波长转换材料层55和蓝LED 51中丟失。 Thus, the wavelength converting material 55 is prevented from entering the red light emitted by the LED 53 red, thereby prevents the loss of red light in the wavelength converting material layer 55 and the blue LED 51 is in.

图6是根据本发明第五实施例的发光装置的横截面图。 FIG 6 is a cross-sectional view of a light emitting device according to a fifth embodiment of the present invention.

参看图6,此实施例的发光装置包舍没置在衬底50上的蓝LED51、封 Referring to FIG. 6, the light emitting device package of this embodiment not rounded embodiment the opposing blue LED51 on the substrate 50, sealing

的红LED 53,且可进一步包含如图4 ;斤示实施例中的密封树脂70。 The red LED 53, and may further comprise 4; pounds embodiment shown in the embodiment 70 of the sealing resin.

根据此实施例,反射镜60a也包含如图4和图5所示实施例中的至少一对高折射率介电层和低折射率介电层。 According to this embodiment, the mirror 60a is also included in Figures 4 and 5 at least one high refractive index dielectric layer and a low refractive index dielectric layers in this embodiment. 然而与图4所示的反射镜60不同, 反射镜60a部分形成于波长转换材料55上。 However, the mirror 60 shown in FIG 4 differ, the mirror portion 60a is formed on the wavelength conversion material 55. 换句话说,反射4竟60a形成于波长转换材料55的有限区域上以反射从红LED 53发射并向波长转换材料55入射的光,且因此,波长转换材料55的其它区域暴露。 In other words, the reflected light 4 actually 60a is formed on a limited area of ​​the wavelength converting material 55 and to reflect incident on the wavelength converting material 55 is emitted from the red LED 53, and therefore, other areas of the wavelength converting material 55 is exposed. 通过此配置,可在光从蓝LED 51发射到密封树脂70中时减少与反射镜60a有关的光损失。 With this configuration, light can be transmitted 60a to reduce losses related to the time the sealing resin 70 and the mirror in the blue light from the LED 51. 图7是根据本发明第六实施例的发光装置的横截面图。 7 is a cross-sectional view of a light emitting device according to a sixth embodiment of the present invention. 参看图7,此实施例的发光装置包舍没置在衬底50上的蓝LED51、封闭蓝LED 51的波长转换材料55以及如图4所示实施例中的波长转换材料55上的反射4竟60。 Referring to FIG. 7, the light emitting device package of the embodiment not rounded on the counter substrate 50 in this embodiment LED51 blue, blue LED wavelength conversion material closure 51 shown in FIG. 4 and 55 of the wavelength converting material 55 in the embodiment of the reflector 4 actually 60.

然而在此实施例中,红LED 53a和53b以蓝LED 51为中心对称设置。 However, in this embodiment, the red LED 53a and 53b to the blue LED 51 as the center of symmetry. 红LED 53a和53b的数目可为两个或两个以上。 The number of red LED 53a and 53b may be two or more. 通过此配置,可提供从红LED 53a和53b发射的红光的均匀亮度分布以及混合光的均匀亮度分布。 With this configuration, it may provide a uniform luminance and a uniform luminance distribution of the mixed light from the red LED 53a and the red emitter 53b distribution.

同时如图4说明,可形成密封树脂70以密封红LED 53a和53b以及波长转换材料55。 While FIG. 4 shows, the sealing resin 70 to seal the red LED 53a and 53b and a wavelength conversion material 55 can be formed.

12图8是根据本发明第七实施例的发光装置的横截面图。 12 FIG. 8 is a cross-sectional view of a light emitting device according to a seventh embodiment of the present invention.

参看图8,此实施例的发光装置包含设置在衬底50上的蓝LED81、封闭蓝LED 81的波长转换材料85以及如图4所示实施例中的波长转换材料85上的反射镜90。 Referring to FIG 8, this embodiment comprises a blue light emitting device disposed on a substrate 50 LED81, closed wavelength converting material 85 and the blue LED 81 as shown embodiment the mirror 90 on the wavelength converting material 85 in the embodiment shown in FIG 4. 另外,发光装置包含与波长转换材料85分离的红LED 53 以及经形成以密封波长转换材料85和红LED 53的密封树脂70。 Further, the light emitting device comprises a wavelength converting material is separated from the red LED 53 and 85 the sealing resin 70 is formed to seal the wavelength converting material 85 and the red LED 53.

在此实施例中,波长转换材料85是经形成以均匀封闭蓝LED 81的材料层。 Embodiment, the wavelength conversion material 85 is enclosed by a uniform layer of material to blue LED 81 is formed in this embodiment. 对于设置在衬底50上的蓝LED 81 ,可通过镂花涂装(stenciling)或类似方法在其上面形成波长转换材料85。 For the blue LED 81 is disposed on the substrate 50, may be (stenciling) or the like forming the wavelength conversion material 85 thereon by stenciling. 或者,对于附接到子基座(未图示)上的蓝LED81,可通过电泳过程在其上面形成波长转换材料85。 Alternatively, for the blue sub LED81 on the attached base (not shown), the wavelength converting material 85 may be formed thereon by electrophoresis. 在第6,642,652号和第6,650,044号美国专利中揭示了基于镂花涂装或电泳过程形成具有均匀厚度的磷光体层的方法。 It discloses a method of forming a phosphor layer having a uniform thickness based stenciling or electrophoretic processes in U.S. Pat. Nos. 6,642,652 and No. 6,650,044 in. 可通过镂花涂装和类似方法在波长转换材料层上均匀形成反射镜90。 Reflector 90 may be uniformly formed on the wavelength conversion material layer is formed by stenciling and the like.

或者,在制造蓝LED81的过程中,可通过以下来形成波长转换材料层85:在衬底上生长化合物半导体层,通过光刻和蚀刻形成多个蓝LED,并接着在包含所述多个蓝LED的衬底上涂覆含有磷光体的透明有机液体或凝胶(例如,旋涂玻璃(spin-on-glass,SOG))。 Alternatively, during the manufacture of the blue LED81, can be formed by a wavelength converting material layer 85: growing a compound semiconductor layer on a substrate, a plurality of blue LED are formed by photolithography and etching, and then the plurality of blue comprising LED on a transparent substrate coated with an organic liquid or gel phosphors (e.g., spin-on glass (spin-on-glass, SOG)). 在衬底上形成波长转换材料层之后,将所述多个蓝LED个别地分为各个LED81,所述LED81每一者具有厚度均匀的波长转换材料层85。 After forming the wavelength conversion material layer on a substrate, the plurality of individually divided into individual blue LED 81 LED, the LED 81 each having a uniform thickness of the wavelength conversion material layer 85. 这里,反射镜90可在所述多个蓝LED 分为各个LED 81之前形成于波长转换材料层85上,或可在所述多个蓝LED 分为各个LED 81之后通过例如镂花涂装或类似方法的过程形成于波长转换材料层85上。 Here, the mirror 90 may be divided into a plurality of blue LED after the wavelength conversion material is formed on the layer 85 before the respective LED 81, LED 81, or can be divided into each of the plurality of blue LED by, for example stenciling or process the like is formed on the wavelength conversion material layer 85. 反射镜卯包含至少一对介电层91和93,其中介电层91 具有较高折射率且介电层93具有较低折射率。 D reflector comprises at least one pair of dielectric layers 91 and 93, the dielectric layer 91 having a higher refractive index and a dielectric layer 93 having a lower refractive index.

根据此实施例,由于含有磷光体的波长转换材料层85具有均匀厚度, According to this embodiment, since the material containing a wavelength converting phosphor layer 85 has a uniform thickness,

使得经由波长转换产生的光可展现均匀的波长分布。 So that light generated through wavelength conversion may exhibit a uniform wavelength distribution. 、' ' , ''

在上述实施例中,已将蓝LED 51和81描述为由波长转换材料55和88封闭。 In the above embodiment, the blue LED 51 and 81 have been described as being a wavelength conversion material 55 and 88 is closed. 然而,本发明不限于此配置,可采用用于发射第一波长的光(例如,紫外射线)的发光二极管替代蓝LED。 However, the present invention is not limited to this configuration, the light emitting diode may be employed for the first alternative to the blue LED emission wavelength (e.g., ultraviolet rays). 在此情况下,波长转换材料含有能够将紫外射线转换为可见光(例如,蓝光和/或黄光)的磷光体。 In this case, the wavelength converting material capable of containing the UV radiation into visible light (e.g., blue and / or yellow) phosphors.

在实施例中,可采用能够发射比第一波长长的第二波长的光的其它发光二极管,例如绿LED替代红LED53、 53a和53b。 In other embodiments, the light emitting diode, capable of emitting light can be longer than the first wavelength to a second, alternative example, a green LED red LED53, 53a and 53b.

同时,在实施例中,LED51、 81和83电连接到引线电极(未图示)。 Meanwhile, in an embodiment, LED51, 81 and 83 are electrically connected to lead electrodes (not shown). 出于此目的,可使用子基座(未图示)或结合线(未图示),且LED可经由导电粘合剂附接到引线电极。 For this purpose, using the sub-base (not shown) or a binding line (not shown), and the LED may be connected to the lead electrodes via a conductive adhesive. 尽管LED51、 81和83可电连接到相同的引线电极并由相同的电源驱动,但本发明不限于此配置。 Although LED51, 81 and 83 may be electrically connected to the same power source lead electrode by the same drive, but the present invention is not limited to this configuration. 而是,LED可各自电连接到单独的引线电极并由不同的电源驱动。 Instead, LED may be electrically connected to each different individual lead electrode by a power driver.

13通过上文描述显而易见,本发明可提供一种包含多个波长转换材料层以实现混合光的发光装置,其中含有用于使光向相对短的波长进行波长转换的磷光体的波长转换材料层设置在含有用于使光向相对长的波长进行波长转换的磷光体的另一波长转换材料层上,从而可防止经由波长转换产生的光通过磷光体而丟失。 13 apparent by the above description, the present invention can provide a wavelength conversion material layer comprising a plurality of the light emitting device to achieve a mixed light, wherein the wavelength of light containing a wavelength conversion phosphor conversion material layer toward the relatively short wavelength provided for containing a relatively long light wavelength to another wavelength conversion phosphor conversion material layer, thereby preventing the light through the wavelength conversion by the phosphor produced lost. 此外,透明模制零件设置在波长转换材料层与发光二极管之间,以防止经由磷光体的波长转换而产生的光由于重新进入发光二极管而丢失。 Further, the transparent molded part is disposed between the wavelength converting material layer and a light emitting diode, to prevent the wavelength conversion by the phosphor generated light due to the re-enters the LED lost. 而且,本发明可提供一种发光装置,其进一步包含介电多层反射镜,以防止经由波长转换产生的光由于重新进入磷光体或发光二极管而丟失。 Further, the present invention can provide a light emitting device, further comprising a dielectric multilayer mirror, to prevent light from phosphors due to re-enter a light emitting diode or lost generated through wavelength conversion. 另外,本发明可提供一种发光装置,其进一步包含介电多层反射镜,以防止从用于发射较长波长的光的第二发光二极管发射的光通过磷光体而丢失,或防止从用于发射较短波长的光的第一发光二极管发射的光由于重新进入波长转换材料而丟失。 Further, the present invention can provide a light emitting device, further comprising a dielectric multilayer mirror, to prevent light from the second light emitting diode emits light of longer wavelength emitted from a phosphor is lost through, or prevented from using in the first light emitting diode emits light of a shorter wavelength of light emitted due to re-enter the wavelength converting material is lost. 尽管已参看附图描述示范性实施例,"f旦应注意本发明不限于所述实施例和图式,且所属领域的技术人员在不脱离由所附权利要求书界定的本发明精神和范围的情况下可做出各种修改和改变。 Although described with reference to the drawings exemplary embodiments, "f denier should be noted that the present invention is not limited to the embodiments and drawings of the embodiments, and those skilled in the art without departing from the spirit and scope of the invention defined by the appended claims of the various modifications and changes may be made in the case.

Claims (17)

1、一种发光装置,其特征在于其包括:发光二极管,其设置在衬底上以发射第一波长的光;透明模制零件,其封闭所述发光二极管;下部波长转换材料层,其设置在所述透明模制零件上,且含有用于将从所述发光二极管发射的所述第一波长的光转换成比所述第一波长长的第二波长的光的磷光体;以及上部波长转换材料层,其设置在所述下部波长转换材料层上,且含有用于将从所述发光二极管发射的所述第一波长的光转换成比所述第一波长长的第三波长的光的磷光体,所述第三波长比所述第二波长短。 1, a light emitting device, characterized in that it comprises: a light emitting diode disposed on the substrate to emit light at a first wavelength; a transparent molded parts, which enclose the light emitting diode; a lower wavelength conversion material layer, which is provided said light on said transparent molded parts, from and including the light emitting diode for emitting a first wavelength into first wavelength longer than the wavelength of the second phosphor light; and an upper wavelength conversion material layer, which is provided on a lower portion of the wavelength converting material layer, and containing for the light emitted from the light emitting diode into a first wavelength longer than the first wavelength light having a third wavelength phosphor, and the third wavelength is shorter than the second wavelength.
2、 根据权利要求1所述的发光装置,其特征在于其中所述透明模制零件、所述下部波长转换材料层以及所述上部波长转换材料层具有按此次序增加的折射率。 2. The light emitting device according to claim 1, wherein said transparent molded part wherein the lower wavelength conversion material layer, and the upper wavelength conversion material layer having a refractive index increases in this order.
3、 根据权利要求1所述的发光装置,其特征在于其中所述下部波长转换材料层包括至少一个开口,所述透明模制零件通过所述开口暴露,所述开口填充有所述上部波长转换材料层。 3, the light emitting device according to claim 1, wherein the wavelength conversion material wherein the lower layer comprises at least one opening, said transparent molded part exposed through the opening, the opening filled with the upper portion of the wavelength conversion material layer.
4、 根据权利要求1所述的发光装置,其特征在于其中所述第一波长的光为蓝光,所述第二波长的光为红光,且所述第三波长的光为绿光。 4. The light emitting device according to claim 1, characterized in that wherein said first wavelength is a blue light, the red light of the second wavelength, said third wavelength light and green light.
5、 根据权利要求1所述的发光装置,其特征在于其中所述透明模制零件以及所述上部波长转换材料层和下部波长转换材料层是使用模具形成的。 5. The light emitting device according to claim 1, wherein said transparent molded part and the upper material layer and the lower wavelength converting wavelength conversion material layer is formed using a mold.
6、 根据权利要求5所述的发光装置,其特征在于其中所述透明模制零件由硅树脂形成,且所述上部波长转换材料层和下部波长转换材料层由环氧树脂形成。 6, the light emitting device according to claim 5, characterized in that said molded part is formed of transparent silicone resin, and the upper wavelength conversion material layer and the lower wavelength conversion material layer is formed from an epoxy resin.
7、 根据权利要求1所述的发光装置,其特征在于其进一步包括:下部介电多层反射镜,其插入在所述透明模制零件与所述下部波长转换材料层之间;以及上部介电多层反射镜,其插入在所述下部波长转换材料层与所述上部波长转换材料层之间。 And an upper dielectric; lower dielectric multilayer mirror, which is interposed between the transparent molded part and the lower wavelength conversion material layer: 7, a light emitting device as claimed in claim 1, characterized in that it further comprises electric multilayer mirror, which is interposed between the lower wavelength conversion material layer and the upper layer of wavelength conversion material.
8、 根据权利要求7所述的发光装置,其特征在于其中所述下部介电多层反射镜中的介电层中的每一者具有满足(2m-l)入2/4n2关系的厚度,其中, n2指示所述介电层每一者的折射率,人2指示所述第二波长,且m指示大于或等于1的整数;且其中所述上部介电多层反射镜中的介电层中的每一者具有满足(2k-l)X3/4n3关系的厚度,其中,n3指示所述介电层每一者的折射率,人3指示所述第三波长,且k指示大于或等于1的整数。 8, the light emitting apparatus according to claim 7, characterized in that wherein each of the lower dielectric layer in a multilayer dielectric mirror has a satisfies (2m-l) into a thickness of 2 / 4n2 relationship, wherein, each indicative of the refractive index n2 of a dielectric layer, 2 who indicates the second wavelength, and m indicates an integer equal to or greater than 1; and wherein said upper dielectric multilayer dielectric mirrors each layer has a thickness X3 / 4n3 satisfying the relationship of (2k-l), wherein, n3 indicate the refractive index of each of the dielectric layer, 3 indicates who the third wavelength, and k indicates greater than or an integer equal to 1.
9、 根据权利要求7所述的发光装置,其中所述下部波长转换材料层包括至少一个开口,所述透明模制零件通过所述开口暴露,所述开口填充有所述上部波长转换材料层。 9, the light emitting apparatus according to claim 7, wherein the lower wavelength conversion material layer includes at least one opening, said transparent molded part exposed through the opening, the opening filled with the upper portion of the wavelength conversion material layer.
10、 根据权利要求9所述的发光装置,其特征在于其中所述上部介电多层反射镜延伸到所述开口中,以插入在所述开口中的所述透明模制零件与所述上部波长转换材料层之间。 10. The light emitting device according to claim 9, wherein said upper portion of said dielectric multilayer mirror extends into the opening, to insert in the opening with a transparent molded part wherein the upper between the wavelength converting material layer.
11、 一种发光装置,其特征在于其包括: 第一发光二极管,其设置在衬底上以发射第一波长的光; 波长转换材料,其封闭所述第一发光二极管,且含有用于对从所述第一发光二极管发射的所述第一波长的光的一部分执行波长转换的磷光体; 第二发光二极管,其与所述第一发光二极管分离,且设置在所述衬底上以发射比所述第一波长长的第二波长的光;介电多层反射镜,其形成于所述波长转换材料上且包含至少一对介电层,其中一个介电层具有较高折射率且另一介电层具有较低折射率,以反射入射在所述波长转换材料上的所述第二波长的光。 11, a light emitting device, characterized in that it comprises: a first light emitting diode disposed on the substrate to emit light of a first wavelength; wavelength converting material, which closes the first light emitting diode, and comprising for the light emitted from the first light emitting diode of the first wavelength portion of the light wavelength conversion phosphor performed; a second light-emitting diode, light emitting diode with the first separation, and disposed on the substrate to emit the first wave of light longer than said second wavelength; a dielectric multilayer mirror, which is formed on the wavelength conversion material and comprises at least one dielectric layer, wherein the dielectric layer has a higher refractive index and another dielectric layer having a lower index of refraction to reflect light incident on the wavelength conversion material of the second wavelength.
12、 根据权利要求11所述的发光装置,其特征在于其中所述介电层中的每一者具有满足d-(2m-l)A74n关系的厚度"d",其中,n指示所述介电层每一者的折射率,X指示所述第二波长,且m指示大于或等于1的整数。 12, the light emitting device according to claim 11, wherein wherein each of the dielectric layers satisfying d- (2m-l) a thickness "d" A74n relationship, wherein, the dielectric n-indicating the refractive index of each dielectric layer, X indicates the second wavelength, and m indicates an integer equal to or greater than 1.
13、 根据权利要求11所述的发光装置,其进一步包括:密封树脂,其封闭所述波长转换材料和所述第二发光二极管,所述密封树脂具有比具有所述较高折射率的所述介电层低的折射率。 13, the light emitting apparatus according to claim 11, further comprising: a sealing resin, which closes said second wavelength converting material and the light emitting diode, the sealing resin having a higher refractive index than having the a low refractive index dielectric layer.
14、 根据权利要求11所述的发光装置,其特征在于其进一步包括:另一第二发光二极管,其以所述第一发光二极管为中心与所述第二发光二极管对称设置。 14, the light-emitting device as claimed in claim 11, characterized in that it further comprises: a further second light emitting diode, which is the center of the first LED and the second LED set symmetrically.
15、 根据权利要求11所述的发光装置,其特征在于其中所述介电多层反射镜部分形成于所述波长转换材料上。 15, the light emitting apparatus according to claim 11, characterized in that wherein said dielectric multilayer mirror is formed on a portion of the wavelength conversion material.
16、 根据权利要求11所述的发光装置,其特征在于其中所述波长转换材料是形成于所述发光二极管上且具有均匀厚度的材料层。 16, the light emitting device according to claim 11, wherein the wavelength conversion material wherein said material layer is formed on the light emitting diode and having a uniform thickness.
17、 根据权利要求11所述的发光装置,其特征在于其中所述第一发光二极管发射具有490 nm或更小峰值波长的蓝光或紫外射线;且其中所述第二发光二极管发射具有580 nm或更大峰值波长的红光。 17, the light emitting device according to claim 11, wherein wherein said first light emitting diode emits 490 nm or less, the peak wavelength of blue light or ultraviolet rays; and wherein said second light emitting diode emits light having 580 nm or larger red light peak wavelength.
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