CN100530659C - 快闪存储单元及造成分离侧壁氧化的方法 - Google Patents

快闪存储单元及造成分离侧壁氧化的方法 Download PDF

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Publication number
CN100530659C
CN100530659C CNB038210924A CN03821092A CN100530659C CN 100530659 C CN100530659 C CN 100530659C CN B038210924 A CNB038210924 A CN B038210924A CN 03821092 A CN03821092 A CN 03821092A CN 100530659 C CN100530659 C CN 100530659C
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China
Prior art keywords
circuit
memo
layer
programmable read
electrically erasable
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Expired - Fee Related
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CNB038210924A
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English (en)
Chinese (zh)
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CN1679166A (zh
Inventor
D·沈
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Infineon Technologies AG
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Infineon Technologies AG
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Publication of CN1679166A publication Critical patent/CN1679166A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNB038210924A 2002-09-04 2003-09-03 快闪存储单元及造成分离侧壁氧化的方法 Expired - Fee Related CN100530659C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/234,344 2002-09-04
US10/234,344 US6841824B2 (en) 2002-09-04 2002-09-04 Flash memory cell and the method of making separate sidewall oxidation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2009100054848A Division CN101483178B (zh) 2002-09-04 2003-09-03 快闪存储单元及造成分离侧壁氧化的方法

Publications (2)

Publication Number Publication Date
CN1679166A CN1679166A (zh) 2005-10-05
CN100530659C true CN100530659C (zh) 2009-08-19

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Family Applications (2)

Application Number Title Priority Date Filing Date
CNB038210924A Expired - Fee Related CN100530659C (zh) 2002-09-04 2003-09-03 快闪存储单元及造成分离侧壁氧化的方法
CN2009100054848A Expired - Fee Related CN101483178B (zh) 2002-09-04 2003-09-03 快闪存储单元及造成分离侧壁氧化的方法

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CN2009100054848A Expired - Fee Related CN101483178B (zh) 2002-09-04 2003-09-03 快闪存储单元及造成分离侧壁氧化的方法

Country Status (7)

Country Link
US (2) US6841824B2 (https=)
EP (1) EP1535337B1 (https=)
JP (1) JP4621023B2 (https=)
CN (2) CN100530659C (https=)
DE (1) DE60335382D1 (https=)
TW (1) TWI231575B (https=)
WO (1) WO2004023558A2 (https=)

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US6909139B2 (en) * 2003-06-27 2005-06-21 Infineon Technologies Ag One transistor flash memory cell
US7160771B2 (en) * 2003-11-28 2007-01-09 International Business Machines Corporation Forming gate oxides having multiple thicknesses
US6972457B1 (en) * 2004-04-09 2005-12-06 Eastman Kodak Company Imaging cell that has a long integration period and method of operating the imaging cell
KR100624290B1 (ko) * 2004-06-14 2006-09-19 에스티마이크로일렉트로닉스 엔.브이. 플래쉬 메모리 소자의 제조 방법
ITMI20042532A1 (it) * 2004-12-28 2005-03-28 St Microelectronics Srl Metodo per fabbricare dispositivi elettronici di memoria non volatile integrati su un substrato semiconduttore comprendente una fase di deposizione di dielettrico premetal migliorata
US7679130B2 (en) 2005-05-10 2010-03-16 Infineon Technologies Ag Deep trench isolation structures and methods of formation thereof
US7495279B2 (en) * 2005-09-09 2009-02-24 Infineon Technologies Ag Embedded flash memory devices on SOI substrates and methods of manufacture thereof
US20070133289A1 (en) * 2005-12-01 2007-06-14 Aplus Flash Technology, Inc. NAND-type flash memory device with high voltage PMOS and embedded poly and methods of fabricating the same
US20080112231A1 (en) * 2006-11-09 2008-05-15 Danny Pak-Chum Shum Semiconductor devices and methods of manufacture thereof
CN102544004A (zh) * 2010-12-09 2012-07-04 和舰科技(苏州)有限公司 一种嵌入式闪存及其制造方法
US8916909B2 (en) * 2012-03-06 2014-12-23 Infineon Technologies Austria Ag Semiconductor device and method for fabricating a semiconductor device
CN108630700A (zh) * 2017-03-22 2018-10-09 中芯国际集成电路制造(上海)有限公司 闪存器件及其制造方法
US10297602B2 (en) 2017-05-18 2019-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Implantations for forming source/drain regions of different transistors
KR102212751B1 (ko) 2019-07-26 2021-02-04 주식회사 키 파운드리 비휘발성 메모리 소자 및 그 제조방법
TW202118280A (zh) * 2019-09-10 2021-05-01 日商索尼半導體解決方案公司 攝像裝置、電子機𠾖及製造方法

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US6043123A (en) * 1996-05-30 2000-03-28 Hyundai Electronics America, Inc. Triple well flash memory fabrication process
US6258667B1 (en) * 1999-08-10 2001-07-10 United Microelectronics Corp. Method for implementing embedded flash

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JP2001135804A (ja) * 1999-11-01 2001-05-18 Denso Corp 半導体装置
JP3450770B2 (ja) * 1999-11-29 2003-09-29 松下電器産業株式会社 半導体装置の製造方法
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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6043123A (en) * 1996-05-30 2000-03-28 Hyundai Electronics America, Inc. Triple well flash memory fabrication process
US6258667B1 (en) * 1999-08-10 2001-07-10 United Microelectronics Corp. Method for implementing embedded flash

Also Published As

Publication number Publication date
JP2005537671A (ja) 2005-12-08
US7081381B2 (en) 2006-07-25
CN101483178B (zh) 2011-08-03
US6841824B2 (en) 2005-01-11
CN1679166A (zh) 2005-10-05
WO2004023558A2 (en) 2004-03-18
WO2004023558A3 (en) 2004-09-02
TW200409302A (en) 2004-06-01
EP1535337B1 (en) 2010-12-15
JP4621023B2 (ja) 2011-01-26
US20040041205A1 (en) 2004-03-04
EP1535337A2 (en) 2005-06-01
TWI231575B (en) 2005-04-21
CN101483178A (zh) 2009-07-15
US20050040474A1 (en) 2005-02-24
DE60335382D1 (de) 2011-01-27

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