CN100526052C - Imprint lithography with improved monitoring and control and apparatus therefor - Google Patents

Imprint lithography with improved monitoring and control and apparatus therefor Download PDF

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CN100526052C
CN100526052C CN 200480022853 CN200480022853A CN100526052C CN 100526052 C CN100526052 C CN 100526052C CN 200480022853 CN200480022853 CN 200480022853 CN 200480022853 A CN200480022853 A CN 200480022853A CN 100526052 C CN100526052 C CN 100526052C
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surface
method
mold
radiation
imprint
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CN 200480022853
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CN1832846A (en )
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余兆宁
斯蒂芬·Y·舒
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普林斯顿大学知识产权和技术许可办公室
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures

Abstract

一种在压印光刻术处理过程中测量或监测至少一个参数的处理过程,包括如下步骤:提供具有用于压印测试图的表面的模具(方框A);把测试图压印在可塑表面上(方框B);照射测试图(方框C);测量散射、反射、或透射的辐射中的分量,以监测压印的参数(方框D);和可供选择地使用测量的辐射分量,控制处理过程的参数(方柜E)。 A method of measuring the imprint lithography process or monitoring at least one parameter of the process, comprising the steps of: providing a mold (block A) having a surface for imprinting a test chart; the test pattern embossed plastic upper surface (block B); FIG irradiation test (block C); measuring the scattered, reflected, or transmitted radiation components to monitor parameters imprint (block D); alternatively, and using the measured radiation components, the control parameters of the process (the side cabinet E).

Description

具有改进的监测和控制的压印光刻术及其设备 Its imprint lithography apparatus having improved control and monitoring

交叉参考相关申请 Cross-Reference to Related Applications

本申请要求美圃临时申请序号No. 60/477,161的优先权,该临时申请由Stephen Y. Chou和Zhaoning Yu于2003年6月9日申请,标趙为"Method and Apparatus for Monitoring and Controlling of Imprinting Processes and Materials",本文引用该'161临时申请,供参考。 This application claims provisional US Application Serial Po No. 60 / 477,161, which is the provisional application and Stephen Y. Chou Zhaoning Yu on June 9, 2003 application, Zhao labeled "Method and Apparatus for Monitoring and Controlling of Imprinting Processes and Materials ", herein by reference of the '161 provisional application, by reference.

技术领域 FIELD

本发明涉及压印光刻术,压印光刻术借助把溪压表面压入可塑4^ 面,使模具困压印在有可塑表面的工件表面上。 The present invention relates to imprint lithography, imprint lithography by means of the pressing surface is pressed into plastic 4 ^ river surface, imprinted with a mold trapped on the surface of the plastic surface of the workpiece. 更具体说,本发明涉及一种用于监测和控制压印光刻术的方法和设备,这种压印光刻术对压印有微尺寸或纳米尺寸的线条特别有用, More particularly, the present invention relates to a method and apparatus for monitoring and controlling imprint lithography, imprint lithography on this embossed with micro-sized or nano-sized lines are particularly useful,

背景技木 Background technology of wood

在衬底上形成微小线条的方法,对制作许多电子的、磁的、机械的、和光学的装置,以及生物分析和化学分析的装置,是十分重要的。 The method of forming fine lines on the substrate of,,, and an optical magnetic mechanical means, and means for biological and chemical analysis of the production of many electrons, is important. 该种方法,例如可用于定义微电路的线条和结构,以及平面光波导和有关光学装置的结构及工作线条。 This method, for example, can be used to define the circuit lines and micro-structure, and the structure and working lines and associated planar waveguide optical device.

光学光刻术是形成这种线条的常规方法。 Optical lithography is a conventional method of forming the line. 在衬底表面涂上一层光致抗蚀剂薄层,并使光刻胶中选择的部分在光的图中舉光。 Portion of the substrate surface coated with a thin layer of photoresist agent, and photoresist lift light selected in the light of FIG. 然后,对光刻胶显影,露出已瀑光的衬底上需要的图,供进一步处理,例如蚀刻处理。 Then, developing the photoresist, the exposed substrate is required FIG waterfall light, for further processing, such as etching process. 光学光刻术处理过程的难点在于,分辨率受光波长、光刻胶及衬底中的散射、和光刻胶厚度及性质的限制。 Difficulties optical lithography process is that resolution is limited by the wavelength of the scattered light, the photoresist and the substrate, and the resist thickness and the nature of the limitations. 因此,随着需要的线条大小变得更小,使光学光刻术变得更加困难。 Therefore, as the need for line size becomes smaller, making it more difficult to optical lithography. 还有,光刻胶的涂布、 显影、和去除,是相对緩慢的步骤,限制了生产的速度。 Further, the resist coating, development, and removal, are relatively slow step, limits the speed of production.

而压印光刻术,根据的是基本上不同的原理,能提供高的分辨率、高的生产能力、低的成本、和可能覆盖的大的面积。 The imprint lithography, was based on fundamentally different principles, we can provide high resolution, high productivity, low cost, and may cover a large area. 在压印光刻术中, 有细小线条的模具,压在有可塑表面(例如涂布光刻胶的衬底)的工件上。 In imprint lithography, a mold with a fine line, the pressure on the workpiece surface with a plastic (e.g., photoresist coated substrate) is. 棋具上的线条,使可塑的光刻肢膜的形状变形,使膜的形状接照模具的线条变形,并在膜表面形成隆起的困.模具擻除之后,处理已形成困的薄膜,除去已变薄的部分,该除去步骤露出下面的衬底, Lines on chess, the shape of the deformed plastic photolithography limb film, the shape of the membrane contact as mold lines deform and form raised trapped in the film surface. After the mold shake addition, the process has become trapped in the film to remove the already thinned portion, the step of removing the underlying substrate is exposed,

供进一步处理。 For further processing. 使用机械压力来实施下压步骤,这种压印能在12平方英寸量级的面积上,以高度的均匀性,压印25纳米以下的线条。 Mechanical pressing step carried out under pressure, which can be on the order of the embossed area of ​​12 square inches with a high degree of uniformity of the embossing lines 25 nanometers or less. 关于更多的细节,见19卯年6月30日颁发给Stephen Y. Chou的美国专利No. 5,772,905,本文引用该专利,供参考。 For more details, see Mao issued on 19 June 30 to Stephen Y. Chou, US Patent No. 5,772,905, which patents cited herein for reference.

如果髙精度机械压力提出的容差问題能够克服,则能实现甚至更高分辨率、更大面积的压印光刻术。 If the tolerance issues raised by Gao precision mechanical stress can be overcome, it can achieve even higher resolution, larger area of ​​imprint lithography. 这个问题能够用正向液压,把模具表面与可塑表面一起加压来解决。 This problem can forward with hydraulic pressure along the surface of the plastic mold to fix the surface. 因为液压是等压的,在加压步骤中没有明显不平衡的側向力。 Since the hydraulic pressure and the like is no significant lateral imbalance force in the pressurizing step. 关于更多的细节,在2002年11月19 日颁发给Stephen Y. Chou的美国专利No. 6,482,742中阐明,该专利的标题为"Fluid Pressure Imprint Lithography",本文引用该专利,供参考。 For more details, issued in 2002, November 19 to US Patent No. 6,482,742 Stephen Y. Chou stated in the title of the patent for the "Fluid Pressure Imprint Lithography", the paper cited patent for reference. 用于液压压印光刻术的效果良好的设备,在Stephen Chou等人2003年8月8日申请的美国专利申请序号No. 10/637,838中说明,本文引用该申请,供参考, Used to good effect hydraulic imprint lithography equipment, in US Patent Stephen Chou et al., 2003 August 8 filed Application Serial No. 10 / 637,838 indicated, refer to the application, for reference,

还能够把模具直接压入衬底表面实现压印光刻术,为此要提供衬底表面是可塑表面的工件。 The mold can also be directly pressed into the surface of the substrate to achieve imprint lithography, the substrate surface is to be provided for this purpose plastic surface of the workpiece. 例如,可塑表面可以是构成装置一部分的材料,诸如有机光发射材料、有机导电材料、绝缘体、或低K的介电材料。 For example, the surface may be a plastic material forming part of the device, such as an organic light-emitting material, an organic conductive material, an insulator, or a low K dielectric material. 作为另一个例子,硅的工件能够用纳米尺寸的困直接压印。 As another example, the silicon workpiece can be trapped directly imprinting nanometer size. 模压表面紧邻要模压的硅表面放置。 Embossed surface adjacent to the silicon surface to be stamped is placed. 用激光插射輻照硅表面,使硅软化或液化,然后把模压表面压入软化的或液化的表面。 Inserted with a laser irradiance silicon surface of the silicon softens or liquefies, and then the mold is pressed into the surface of the softened or liquefied surface. 关于更多的细节, 见美国公开的专利申请序号No. 20O4/0046288,由St印hen Chou于2003年3月17日申请,标题为"Laser Assisted Direct Imprint Lithography",本文引用该申请,供参考。 For more details, see US Published Patent Application Serial No. 20O4 / 0046288, by the St hen Chou printed on March 17, 2003 application, titled "Laser Assisted Direct Imprint Lithography", the article refers to the application for reference .

由于压印光刻术潜在的高速、高分辨率制作大量重要产品的能力,所以有必要监测并研究压印光刻术的处理过程、优化处理过程的参数、优化材料成分、和实时地控制处理过程。 Since imprint lithography potential of high-speed, high-resolution production capacity of a large number of important products, it is necessary to monitor and study the imprint lithography process, optimizing the parameters of the process, optimizing the material composition, and real-time control processing process. 本发明提供一种达到这种监测、优化、和控制的效果良好的方法。 The present invention provides a method to achieve this monitoring, optimization and control method good results. 发明内容 SUMMARY

按照本发明,是在模具困压印在工件表面上的方法中,监测或测 According to the present invention, it is trapped in the mold imprinting method on the surface of the workpiece, the monitoring or measuring

量至少一个参数.监测或测量的实施,是通过:a)提供有模压表面的模具,该模压表面的构造,至少能压印测量用的测试困;b)通过把模压表面压入可塑表面,使测试图压印在可塑表面上;c)至少在一部分压印期间,用辐射照射测试困,并监测或测量从测试图散射、反射、 或透射的辐射中至少一个分量,以监测或测量压印的至少一个参数. 压印步槺通常包括:把靠近工件的模具,以模具的模压表面紧邻可塑表面放置;把模压表面压入可塑表面;和把模压表面与可塑表面分离, 使模压表面的压印困留在可塑表面。 The amount of the at least one parameter monitored or measured embodiments, by: providing a mold with a molding surface A), the configuration of the molding surface, at least the imprint measurement test trapped; b) by molding the plastic surface is pressed into the surface, FIG imprinted on a test surface of a plasticizer; c) at least during a portion of the platen, with a radiation test chart, and monitored or measured from scattered, reflected, or transmitted radiation in at least one component of the test pattern to measure or monitor the pressure printing at least one parameter Kang embossing step typically comprises: the mold approaches the workpiece, proximate to the molding surface of the mold plastic surface; pressed into the surface of the molded plastic surface; separated and the molding surface of the plastic surface of the molding surface imprint left in the sleepy malleable surface. 在许多情况下,加压能够通过加热可塑表面实施,而压印图的保持,可以借助使变形的表面材料冷却或固化,此外,处理过程的控制,能够通过检测辐射分量、从检测的信号产生反馈控制信号、最后该反馈控制信号实时地控制压印处理过程。 In many cases, the pressing can be carried out by heating the surface of the plastic, while maintaining the embossed FIG possible by deforming the surface of the material is cooled or cured, in addition, control process, and by detecting the radiation component from the detection signal generated feedback control signal, and finally the real-time feedback control signal to control the embossing process. 本发明还包括效果良好的设备,供上述监测、测量、和控制压印光刻术方法使用。 The present invention further comprises a device good results, for the above-described monitoring, measurement, and control the use of imprint lithography method. 附困说明 Description attached trapped

结合本文并构成说明书一部分的附困,表明本发明的一个或多个实施例,并与说明一起,用于解释本发明的原理。 Incorporated herein and constitute part of the specification attached trapped, it indicates that one or more embodiments of the present invention, and together with the description, serve to explain the principles of the invention. 附围仅用于说明本发明一个或多个优选实施例的目的,不应认为是对本发明的限制。 Wai attached only to illustrate the present invention, a more preferred embodiment or embodiments of the object, not to be considered as limiting the present invention.

附困中: Attached trapped in:

困1A至1E示意画出压印处理过程及材料的不同阶段,这些不 1A to 1E schematically shown trapped imprint different stages of the process and materials, which do not

同阶段,是本发明说明的计量学方法需要监测的。 The same stage, a metrology method of the present invention is described to be monitored.

图2示意画出按照本发明一个实施例的测量设备。 2 schematically shown a measuring apparatus according to the embodiment of the present invention. 图3画出按照本发明示范实施例的被测量的结构。 Structure is measured according to Figure 3 shows an exemplary embodiment according to the present invention. 困4是示例性测试图的扫描电子显微镜像,在本发明示范实施例 4 is a scanning electron microscope trapped exemplary test chart image, in an exemplary embodiment of the present invention,

的模具上使用该测试困。 Using this test trapped on the mold.

困S按照本发明示范实施例,画出实验布局的简图。 S according to an exemplary embodiment of the difficulties of the present invention, shown a schematic layout of the experiment. 困6表明用困5所示实验获得的测量数据。 6 show measurements with the trapped experimentally obtained data shown in FIG 5 trapped. 困7按照本发明示范实施例,画出计量学器械的示意方框困. 困8按照本发明示范实施例,画出处理系统的示意方框图, 困9是曲线图,表明用困5的布局获得的测量数据。 7 according to an exemplary embodiment trapped embodiment of the present invention, shown a schematic block metrology instrument trapped. Trapped 8 according to an exemplary embodiment of the present invention, shown a schematic block diagram of a processing system, trapped 9 is a graph view showing a layout obtained trapped 5 the measurement data. 图上表明, 处理温度对模具深入光刻胶速度的影响. FIG show the processing temperature influence on the depth of the photoresist mold speed.

困10以曲线表示用困5的布局获得的测量数据。 10 shows the measurement trapped trapped layout data obtained by curve 5. 困上表明,处理压力对模具深入光刻胶速度的影响. Show the difficulties, the pervasive influence of the mold pressure processing speed of the photoresist.

图11以曲线表示用图5的布局获得的测量数据,图上表明,预压印光刻胶烘烤条件对模具深入光刻胶速度的影响。 11 shows a curve with the measured data obtained by the layout of FIG. 5, the figure shows that the pre-baking conditions imprint resist mold further influence the speed of the photoresist.

图12以曲线表示用图5的布局获得的测量数据。 FIG 12 shows the measurement data obtained by the layout of FIG. 5 in a graph. 困上表明,不同的初始光刻胶膜厚度对模具深入光刻胶速度的影响。 It showed the difficulties, different initial thickness of the photoresist film on the photoresist mold depth impact velocity.

困13A画出按困5的布局,不同的光刻胶折射率对测量的影响(模拟的)。 13A layout trapped trapped drawn to 5, how the different refractive index of the photoresist measured (analog). 数据是用标量衍射理论计算的, Data is calculated scalar diffraction theory,

图13B画出用困5所示实施例获得的测量数据,图上画出光刻胶折射率对测量的影响. FIG. 13B embodiment shown the measurement data obtained by the embodiment shown trapped 5, shown on the measurement impact on the refractive index of the photoresist in FIG.

困14画出用困5的布局获得的测量数据。 14 trapped drawn with the measurement data obtained by the layout trapped 5. 图上表明,模具线条的不同(在本例中是线宽)对模具深入光刻胶(有不同的初始膜厚度) The figure shows that the mold different lines (line width in the present example) of the photoresist mold depth (with different initial film thickness)

速度的影响o Speed ​​impact o

图15画出用躅5的布局获得的测量数据。 15 drawn with the measurement data obtained by the layout of the hallux 5. 图上表明本发明在压印处理过程控制中的应用;和 It indicates that the application process of the present invention is in the control of the imprint figure; and

困16是示意方框困,画出按照本发明监测或控制压印光刻术所涉及的步骤, 16 is a schematic block trapped trapped, monitoring or draw imprint lithography steps involved in the control according to the present invention,

具体实施方式 Detailed ways

本发明涉及监测和/或控制压印光刻术的处理过程及材料的方法.借助测量和分析被一组与压印有关的微观测试线条散射的辐射, 能够在现场或在现场外测量或检测压印的参数和材料的性质,并能产生反馈或控制信号,控制压印处理过程及其结果。 The present invention relates to monitoring and / or control of processes and materials imprint lithography. By means of a set of measurement and analysis are relevant micro-embossed radiation scattering test line can be detected or measured or off site in the field parameters and material properties of the imprint, and to generate a feedback or control signal to control the process and the results of the imprint. 本发明还针对在现场或在现场外监测压印处理过程及材料的方法及设备。 The present invention is also directed at the scene or imprinting method and apparatus for monitoring the process and materials outside the field.

这些方法包括:1) 提供一种模具,上面至少有一组测试表面隆起的线条,该测试表面隆起的线条,可以包括光栅、两維阵列、有不规则或任意定义 These methods include: 1) providing a mold with at least a top surface of the ridge line test set, the test surface of the ridge line, may comprise a grating, a two-dimensional array, or any irregular defined

形状的结构、或三维结构; Structural shapes, or three-dimensional structure;

2) 在压印处理过程期间,用辐射(单色的或在波长谦中宽频带的)照射该测试表面隆起的图,压印处理过程通常包括:M具带到待形成困的工件近邻、把模具压入涂敷在工件表面上的薄膜、把薄膜从粘滞状态改变为非粘滞状态(或相反)、和把模具与光刻胶分离。 2) during the imprinting process, a radiation (or monochromatic) radiation of the test surface of the ridge in FIG modest wavelength in a wide frequency band, embossing processes typically include: M brought to be formed with a workpiece trapped neighbors, the mold is pressed into a thin film coating on the surface of the workpiece, the film changes from a viscous state to a non-viscous state (or vice versa), and separated from the photoresist mold. 在某些情况中,需要把工件或衬底上已有的困与待印刷的新困对齐。 In some cases, the need to align the existing difficulties with the workpiece or substrate to be printed new difficulties. 在这种情况中,压印步骤前需把模具上的图与已有的困对准。 In this case, the need to align the mold of FIG difficulties with existing before embossing step. 輻射可以是光(可见的、x射线的、紫外的、或红外的)、电子束、或离子束.为简单起见,在本发明的全部说明中,使用术语光,但应当意识到它包^^辐射的其他形式; The radiation may be light (visible, x-ray, ultraviolet, or infrared), e-beam, or an ion beam. For simplicity, in the whole description of the invention, the term light, but it should be appreciated that package ^ ^ other forms of radiation;

3) 测量从被照射的测试结构和可塑材料散射的光,或者测量通过被照射的测试结构和可塑材料透射(在模具与村底两者对该辐射是相对透明的情形)的光; 3) measuring light scattered from the illuminated test structure and moldable material, or as measured by the test structure is illuminated and transmitting moldable material (both the mold and the background radiation is relatively transparent village case) of the light;

4) 从测量的信息抽取有关压印处理过程及材料的参数,抽取可以是实时的(在现场)或脱机的(在现场外)。 4) extraction and processing of parameters related to the information measuring imprint material from the extraction may be real time (on-site) or off-line (off-site).

5) 抽取的信息,可以按在现场的方式,产生用于控制压印处理过程及材料目的的信号。 5) The information extracted may manner in the field, to generate an imprint signal for the purpose of processing and control of the material.

6) 和/或用抽取的信息,研究不同参数与材料对压印处理过程的影响。 6) and / or with the extracted information, the effects of different parameters of the materials of the imprint process.

基于该方法的设备包括: Based on this method devices comprising:

1) 可独立应用的计量学器械,该器械根据抽取的有关压印处理过程及材料的信息。 1) can be independently applied metrology instrument, based on information on the instrument and the processing of the imprint material extracted.

2) 处理系统,包括:压印器械、计量学器械、和处理过程及材料的控制器。 2) processing system, comprising: embossing equipment, metrology instruments, and the controller processes and materials. 压印器械适合按照搮作因素,实施压印光刻术。 Devices suitable for embossing according to Li factors embodiment imprint lithography. 计量学器械适合用輻射(一般是光)照射模具和衬底,并测量散射或透射的輻射,以便抽取有关压印处理过程及材料的信息。 Metrology instrument suitable for radiation (generally light) die and the substrate, and measuring the scattered or transmitted radiation, to extract information about the process and the embossing material. 压印处理过程及材料的控制器,根据计量学器械获得的数据,产生信号,实时调整一个或多个操作参数。 The controller embossing process and materials, metrology instruments based on the data obtained, a signal is generated, real-time adjust one or more operating parameters.

现在参考附图,困16是方框困,示意表明在有可塑表面的工件上的压印光刻术中,蓝测或测量和任选的控制所涉及的步骤.方框A 所示的笫一步猓,是提供有模压表面的棋具,该模压表面用于压印供測量用的测试图. Referring now to the drawings, 16 is a block trapped trapped schematically show on the workpiece surface with a plastic imprint lithography step and, optionally, blue or measure related to the control. Zi shown in block A Guo step, the surface is provided with a chess molded, the molding surface for the embossing test chart used for the measurement.

围1A画出其上有测试困的模具10,测试困在工件近邻包括许多有需要形状的凸起线条16,工件上有可塑的表面。 1A drawn around trapped on which the test mold 10, comprising a number of tests have desired shape trapped raised lines 16, there are plastic surface on the workpiece in the workpiece neighbors. 工件包括承栽薄的可塑膜层12的村底14。 Village planted workpiece comprises supporting a thin plastic film layer 12 of the bottom 14. 箭头20指出模具相对于衬底的运动方向。 Indicated by arrow 20 relative to the mold movement direction of the substrate.

下一步骒(图16的方框B)是对可塑表面进行压印。 Next Ke (block B 16 in FIG.) Is embossed on the plastic surface. 这一步骤通常包括把靠近工件的模具,以模具的模压表面紧邻可塑表面放置; 把模压表面压入可塑表面;和把模压表面与可塑表面分离,使模压表面的压印图留在可塑表面,加压能够通过如在前面说明的美国专利No. 5,772,905所述,用髙精度的机械压力实现,也能够通过如在美国专利No. 6,482,742所述,用液压实现,或者使用静电力或磁力实现:加热可塑表面有利于加压步骤,而冷却可塑表面有利于在可塑表面中保持已压印的困。 This step typically comprises the die near the workpiece, proximate to the molding surface of the mold plastic surface; pressed into the surface of the molded plastic surface; separated and the molding surface of the plastic surface, the surface of the impression left in FIG molded plastic surface, as can be pressurized by the previously described U.S. Patent No. 5,772,905, Gao precision implemented by mechanical pressure, it is possible as by the U.S. Patent No. 6,482,742, a hydraulic realized using electrostatic or or magnetic implemented: plastic surface facilitates heat pressing step and the cooling surface is conducive to maintaining a plasticizer has been trapped in the embossed plastic surface. 可塑薄膜可以是光固化材料,它在光固化前是液体或处于可变形状态,如果衬底材料提供的表面是可塑的或能够使之成为可塑的,例如硅表面可以借助激光软化,则可塑膜12可以省去。 Plastic film may be a photocurable material which is liquid prior to the photo-curable or in a deformable state, if the surface of the substrate material provided is plastic or plastic to make it possible to, for example, the silicon surface may be softened by means of a laser, can Plastic 12 can be omitted. 见前述美国公开的专利申请序号No. 2004/0046288。 See the aforementioned U.S. Patent Application Publication Serial No. 2004/0046288. 可塑表面可以是可塑膜或构成装置一部分的可塑体材料,这种可塑材料例子,包括半导体、 绝缘体、金属、无机材料、有机材料、和光发射材料。 Plastic surface or plastic may be a plastic film material constituting a part of the apparatus, an example of such plastic materials, including semiconductors, insulators, metals, inorganic materials, organic materials, and a light emitting material.

困1B画出被推到与衬底14承栽的薄可塑膜层12接触的模具10。 1B shown trapped pushed into the mold 14 supporting the substrate in contact with a thin plastic film layer planted 1210. 薄的可塑膜层12可以包括热塑合成物、可固化合成物、或其他可塑材、 料的合成物,薄的可塑膜层12最好能依据条件的变化,诸如温度、聚合反应、固化、或辐照的变化,通过物理改变或化学反应,从粘滞状态过渡到非粘滞状态或相反。 A thin film layer 12 may comprise a thermoplastic plastic composition, the curable composition, or other plastic materials, composite materials, thin plastic film 12 preferably can be based on changing conditions, such as temperature, polymerization, curing, variations or irradiation, by chemical reaction or physical changes, the transition from a viscous state to a non-viscous state or vice versa. 最好是,薄的可塑膜层12在它被推到与模具10接触之前或之后,处在粘滞状态。 Preferably, a thin plastic layer 12 before it is pushed into contact with the mold 10 or after, in a viscous state.

困1C和1D画出模具10上用于压入薄可塑膜层12的线条16。 1C and 1D shown trapped die 10 for pressing the plastic into the thin film layer 16 of 12 lines. 在线条16已经压入薄可塑膜层12需要的深度后(图1D),在^f皮压印 After the line 16 has been pressed into a thin plastic film layer 12 needs a depth (FIG. 1D), the embossed skin ^ f

ii的薄膜例如通过冷却或固化,允许或导致改变为非粘滞状态后,在该非粘滞状态中移去棋具。 After ii film e.g. by cooling or curing, results in a change or to allow the non-viscous state, in which the non-removed chess viscous state.

困IE表明脱离薄可塑膜层12的模真IO.模具沿箭头22指示的方向离开,在薄膜12中留下已压印的线条17,测试线条17—般依从模具上凹陷的线条的形状, IE show trapped thin plastic film layer from the IO 12 in the real mode. The direction indicated by an arrow 22 mold away, leaving 17, the test line 17- recess-like shape compliant mold lines have been embossed lines 12 in the thin film,

退回来参考图16方框C所示的笫三步骤,该步躁出现在压印处 Returned to the reference block 16 shown in FIG Zi three-step C, the step appears in the imprint of the manic

理过程期间的某些部分,且通常发生在加压步骤,该笫三步稞是用辐 During the processing procedure of some parts, and typically occurs in the pressurizing step, the wheat is three steps Zi radiation

射(通常是光)照射测试围的至少一部分,使用相对透明的模具和/ Exit (usually light) around at least a portion of the test, and the use of relatively transparent mold /

或相对透明的衬底,例如使用熔融石英,对照射是有利的。 Or relatively transparent substrate such as fused quartz is used for the irradiation is advantageous. 通常的情 The usual situation

形是,被压印的测试线条在光刻胶中形成测试光栅困。 Shape is embossed test lines forming a test grating trapped in the photoresist. 在用光照射时, When irradiated with light,

光栅以能够被分析的方式,使光散射、反射、或透射,从而给出关于 The grating in a manner that can be analyzed, light scattering, reflection, or transmission, giving about

压印处理过程的信息.通过分析,本方法为测量和研究压印光刻术, The imprint of the information processing by the analysis, the method of measurement and research imprint lithography,

提供计量学的方法。 To provide a method of metrology. 因此,在方框D的步骤中,使用散射或透射輻射的至少一个分量,来监测、测量、或研究光刻压印的至少一个参数。 Thus, in the step of block D, using scattered or transmitted radiation in at least one component, to monitor, measure, or at least one parameter of imprint lithography research.

方框E所示的下一步骤,是从测量和研究,前进到压印光刻术的实时的或脱机的控制.在这一步骤中,测量或分析散射、反射、或透射的辐射,产生控制压印的反馈信号.测量和分析散射或透射的辐射的至少一个分量,以便控制压印的至少一个参数。 The next step shown in block E, and is measured from the research, control proceeds to imprint lithography real-time or offline. In this step, the measurement or analysis of scattered, reflected, or transmitted radiation, generating a feedback signal for controlling the platen. measurement and analysis of at least one component of the scattered or transmitted radiation, in order to control at least one parameter imprint. 效果良好的做法是, Good results approach is

使用一个或多个分量,产生控制压印的多个参数的反馈信号。 Using one or more components, generating a feedback signal for controlling the plurality of parameters imprinted.

图2示意画出测量压印参数和材料性质的计量学方法。 FIG 2 schematically metrology parameters and material properties of the imprint method of the plotted measurement. 使用从辐射源30来的辐射束34 (如光束、电子束、或离子束)作为探针,照射組件18的至少一部分,该组件18包括模具10、薄可塑膜层12 (它也可以有多层光刻胶结构)、和衬底14(它可以是平的村底或承栽着图的衬底或结构)。 Using a radiation beam from a radiation source 34 (e.g., light, electron beam or ion beam) as a probe, at least a portion of the illumination assembly 18 to 30, the assembly 18 includes a die 10, a thin plastic film 12 (which may be multiple photoresist layer structure), and the substrate 14 (which may be flat or bottom bearing village or planted in the substrate structure of FIG.). 为筒单起见,全部说明中使用术语"光源,,或"光", 但应当意识到它包括其他形式的辐射源。 For the sake of a single tube, the entire description the terms "source,, or" light ", but it should be appreciated that other forms of radiation include.

要检测和分析的光,通常包括反射的分量36 (所谓"镜反射,,分量)、透射分量38、和散射分量40 U0a、 40b、和40c)。为简化讨论起见,术语"散射"光涵盖所有这些分量,除非另外说明。检测器32 进行光学测量,诸如一个或多个散射分量的强度、相位、或偏振的测量。 To the optical detection and analysis, typically including a component 36 (a so-called reflection ",, mirror component), the transmission component 38, and a scattering component 40 U0a, 40b, and 40c). For simplicity the discussion, the term" scattered "light cover All of these components, unless stated otherwise. the optical detector 32 for measuring one or more of the intensity of the scattered component, phase, or polarization measurements such as.

光源30可以使用基本上单色的光、白光(宽带)、或某些波长的其他组合.可以使用任何偏振或任何偏振与非偏振组合的光.可以使用任何入射角照射.虽然困2画出使用来自模具10 —側的光束照射组件18,但也可以使用来自村底14 一側的光束照射组件。 The light source 30 may use substantially monochromatic light, white (broadband), or some other combination of wavelengths may be used any polarization or unpolarized and polarized light any combination may be used any incidence angle illumination. Although shown trapped 2 use mold from 10 - the beam irradiation side of the assembly 18, it is also possible to use a light beam emitting unit 14 side from the bottom of the village. 光源可以用会聚并定向的光束,也可以用非会聚的宽光束.有用的光波长范围, 从1 nm到100 nm,有用的电子束波长范围,从0.001 nm到10 而有用的离子束波长范围,从0.00001 nm到10 nm。 The light source can be converged and directed beam may Useful wavelength range from 1 nm to, a useful wavelength range of 100 nm of the electron beam, from 0.001 nm to 10 useful ion beam having a wavelength range non-converging wide beam from 0.00001 nm to 10 nm. 被探测的线条(该线条可以在模具上、在衬底上、或在光刻胶中)的尺寸,宽度通常从0.1 nm到500 fim,深度通常从0.1 nm到100 pm, The detection line (line may be on the die, on the substrate, or in the photoresist) size width is typically from 0.1 nm to 500 fim, usually has a depth from 0.1 nm to 100 pm,

散射光性质(profile)(即它的角分布、强度、相位、和偏振) 取决于:1)入射光34的性质(即它的入射角、强度、波长、相位、 和偏振);2)模具10、薄可塑膜层12、和衬底14的材料和成分;3) 模具IO上的图和被照射的薄可塑膜层12中图的特征(即形状、髙度、 模具线条挤入光刻胶的深度、排列、和相对取向)。 Scattered light properties (Profile) (i.e. its angular distribution, intensity, phase, and polarization) depends on: the nature 1) of the incident light 34 (i.e. its angle of incidence, intensity, wavelength, phase, and polarization); 2) Mold 10, the thin plastic film layer 12, and substrate 14 materials, and components; 3) on the mold of FIG IO feature to be irradiated and a thin plastic film layer 12 in FIG. (i.e. shape, of Gao, squeeze die line lithography depth, arrangement, and the relative orientation of the gum).

凭借测量和分析散射光的性质,能够抽取关于压印处理过程的参数和材料的信息。 With the measurement and analysis of the nature of the scattered light, information can be extracted on the process parameters and material of the imprint. 这些参数包括,但不限于:光刻胶中模具线条的挤入度;模具相对于村底的运动速度;模具与光刻胶膜之间的间隙;模具与衬底之间的间隙;包括粘滞性及聚合度的光刻胶膜状况;模具与衬底之间的平行度;模具与衬底的相对取向;从先前处理得到的模具线条与村底上线条之间的重合精度;和模具、衬底、及光刻胶形状的变化。 These parameters include, but are not limited to: extruded mold line of photoresist; bottom mold relative velocity village; gap between the die and the photoresist film; gap between the die and the substrate; adhesive comprising Availability of the photoresist film and the degree of polymerization lag; parallelism between the die and the substrate; the relative orientation of the mold and the substrate; overlay accuracy between the lines obtained from the previously processed line and village mold bottom; and mold , the substrate, and change the shape of the photoresist. 能够测量的光刻胶状况,包括:应力、变形、成分、粘滞性、 流动速度、流动方向、相变、聚合度、聚合物交联度、硬度变化、和光学性质变化。 The photoresist can be measured conditions including: stress, deformation, composition, viscosity, flow velocity, flow direction, phase change, polymerization degree, degree of crosslinking of the polymer, the change in hardness, and optical properties change.

上述测量可以实时和在现场实施,也可以脱机和在现场外实施。 And real-time measurement of the above-described embodiments in the field, may also be implemented in off-line and off-site. 从上述测量抽取的倌息,能够用于在现场或在现场外,分析和控制压印器械、压印处理过程、和压印材料。 From the above measurement information extracted groom, can be used in the field or in the field, the analysis and control of the embossing equipment, embossing process, and an impression material.

在现场从上迷品质鉴定获得的信息,能够用于实时控制各种参数,诸如模具与衬底之间的相对位置(x、 y、 z、 0、拉伸和左右摇摆 In the field of information obtained from the above-identified quality, it can be used for real-time control of various parameters, such as the relative position between the swing die and the substrate (x, y, z, 0, and stretched around

13-所有6个可能的自由度)、压印速度、压印压力、压印温度、模具的变化、和衬底与棋具之间局部和全面的对准。 Between the local and overall alignment), stamping speed, nip pressure and nip temperature, change of the mold, and the substrate with the chess 13- all six possible degrees of freedom.

能够修改本发明上迷计量学器械,以适应具体的实施方案。 The present invention can be modified on the metrology instrument fans, to suit particular embodiments. 例如, 可以设计模具上测试的线条,以增强特定衍射级中散射光的强度,优化特定参数的测量,诸如光刻胶中模具的挤入度。 For example, the lines may be designed to test the mold to enhance the intensity of the scattered light of a specific diffraction orders, the optimization of certain parameters measured, such as a photoresist squeeze of the mold.

困3到图6画出检测光刻胶中模具挤入度的实施例。 3 to 6 shown in FIG trapped detecting the photoresist mold of the squeeze embodiment.

困3画出被探测光34照射的组件的具体例子。 3 is shown a specific example of trapped components of the probe light 34 illuminated. 模具10是透明的模具,由0.5 mm厚的熔融石英衬底制成,背面抛光。 Die mold 10 is transparent, fused silica substrates made of 0.5 mm thick, polishing the back. 测试线条是一组光槺基元,周期lpin,线宽650nm,测试困的深度约400 nra。 Test line is a set of optical Kang primitives period LPIN, width 650nm, depth testing trapped about 400 nra. 薄可塑膜层12是热塑聚合物,具有初始膜厚60及折射率iir-1.46,而光刻胶在升高的温度上,能够转变为粘滞状态。 Thin plastic film 12 is a thermoplastic polymer, having a thickness of 60 and an initial refractive index iir-1.46, while the photoresist on the elevated temperature, can be transformed into a viscous state. 衬底14是硅。 14 is a silicon substrate. 图4 是模具上准备压印的测试光栅困的扫描电子显微镜像。 FIG 4 is a scanning electron microscope image of the test preparation grating trapped imprint mold.

图5画出测量布局的简图。 FIG. 5 shows a schematic layout of the measurement. 使用He-Ne激光器30作光源。 Using He-Ne laser 30 as a light source. 探测光束34的波长是632.8 nm,并平行于入射面偏振(探测光束也可以垂直于入射面偏振,或者可以用其他的偏振状态,不会显著改变本实施例的结果)。 Wavelength of the probe beam 34 is 632.8 nm, and parallel to the incident polarization plane (probe beam may be polarized perpendicular to the incident surface, or may use other polarization state, without significantly altering the results of the present embodiment). 在该布局中,采用30。 In this layout, a 30. 的入射角80。 The angle of incidence of 80. 可以采用其他的入射角。 Other angles of incidence may be employed.

操作时,在室温下使模具10与衬底14承栽的薄可塑膜层12接触.光枏调整到平行于入射平面,用从模具一側来的探测光束,照射组件18。 In operation, at room temperature so that the mold 14 supporting the substrate 10 and the thin plastic film layer 12 planted contact nan adjusted to light parallel to the incident plane, the mold used to from the side of the probe beam irradiation unit 18. 光栅也可以调整到相对于入射平面的其他方向。 Grating may be adjusted in other directions with respect to the plane of incidence.

在整个处理过程期间,从外部用液压把模具压在衬底上。 During the entire process, from the outside of the mold with a hydraulic pressure on the substrate. 加热组件18,升高的温度能够把光刻胶转变为粘滞状态。 Heating the assembly 18, it is able to resist the elevated temperature into a viscous state.

因为测试图是周期性的线条阵列(衍射光栅),照射引起从光栅散射的许多"级,,光束。在本布局中,通常有三级衍射级,包括零级30 (亦称"镜反射,,级)和两级1级光束40a。 Because the test pattern is a periodic array of lines (diffraction grating), the irradiation causing many "class ,, beam. In this layout, there are usually three diffraction orders, including 30 (also known as zero-order" scattered from the grating mirror, grade) and two level 1 beam 40a.

衍射级的相对强度,强烈依赖于模具上的测试光栅对光刻胶的挤入度。 The relative intensity of the diffraction orders, strongly depends on the squeeze of the test grating of photoresist mold. 当模具线条压入光刻胶膜,使光栅线之间的沟槽被折射率近似匹配的光刻胶材料填充,l级衍射级的强度将下降。 When the mold is pressed into the resist film line, between the grating lines of the trench is filled with a refractive index approximately matching photoresist material, l-order diffracted intensity level will drop.

在本实施例中,用一个光电检测器32测量1级光束的强度。 In the present embodiment, a light beam intensity level measured by a photodetector 32. 从该测量中获得的时间分辨的数据,以困6的曲线表示。 Obtained from the measurement of time-resolved data to the curve 6 represents the storm. 该曲线证明了本计量学方法的灵敏度和分辨压印处理过程不同阶段的能力。 The graphs demonstrate that the sensitivity and resolution of the different stages of the process of learning the imprint method of the present measurement.

在处理过程开始,l级衍射相对离的强度表明,虽然模具在外界压力下(在整个处理过程期间,施加80磅/英寸2的恒定压力),与光刻胶膜接触,但在开始阶段,模具线条没有压入光刻胶。 Process start, l-order diffracted from the relative intensities showed that although the mold at ambient pressure (during the entire process, application of 80 lbs / inch 2 of constant pressure), in contact with the resist film, but in the beginning, photoresist lines is not pressed into the mold. 后来衍射强度的降低表明,随着光刻胶被加热软化,模具压入光刻胶。 Later reduce diffraction intensity showed that with the softened photoresist is heated, the mold is pressed into the photoresist. 在处理过程结束,接近零的1级衍射强度表明,模具线条完全压入光刻胶,且光栅线之间的沟槽,被折射率匹配的材料填充, In the processing ends, near zero-order diffracted intensity it shows that the photoresist mold is fully inserted lines, and trenches between the grating lines, the refractive index matching material is filled,

本例说明,本发明的计量学方法能以在现场或在现场外的方式, 监测和研究压印处理过程。 This example illustrates, metrology methods of the invention can be in the manner of off-site or on-site, monitoring and research embossing process. 对压印的关鍵信息(诸如模具在光刻胶中的挤入度、开始和结束点的检测、和处理过程的速度),能够从测量中推出。 Imprint key information (such as the squeeze of the mold in the photoresist, the start and end point detection speed, and the processing procedure), can be introduced from the measurement.

闺7是可独立应用的设备2柳(计量学器械)的简化方框图,该设备可以按照本发明,监测压印的处理过程和材料。 Liu Gui 7 is a device-independent application 2 (metrology instrument) can be simplified block diagram of the apparatus according to the present invention can be monitored, and the processing of the imprint material. 该计量学器械200 包括:I)照明系统IOO,用于产生一束或多束探测光束34; 2)光学硬件120,用于检测和测量散射光;和3)数据分析系统140,用于处理光学硬件收集的数据,并按需要的格式输出结杲。 The metrology device 200 comprising: I) the IOO an illumination system for generating one or more bundles probe beam 34; 2) 120 of the optical hardware for detecting and measuring the scattered light; and 3) data analysis system 140 for processing the optical data collection hardware, as needed Gao format output node.

图8是处理系统的简化方框图,用于按照本发明实施压印光刻术。 FIG 8 is a simplified block diagram of a processing system for the implementation of imprint lithography according to the present invention. 该处理系统包括:I)压印器械IOO,用于实施压印光刻术。 The processing system comprising: I) an imprint apparatus IOO, for performing imprint lithography. 器械处理因素的参数(如:在所有维度中模具的位置、在所有维度中村底的位置、模具与衬底之间的重合对准、压印压力、和压印持续时间)能够被预设的外部输入,或按实时方式改变和控制;2)如图7所示的计量学器械200;和3)处理控制器300,能接收并分析计量学器械加0发送的数据,产生实时控制信号。 Factors treatment instrument parameters (such as: mold dimensions in all positions, the position of overlap between the mold and the substrate aligned with the bottom of the village in all dimensions, the embossing pressure, and embossing time duration) can be preset an external input, or controlled in real time and change; 2) metrology device 200 shown in FIG. 7; and 3) a process controller 300, to receive and analyze data plus 0 metrological instrument transmitted, generating a control signal in real time.

图9到15画出把图3到6画出的实施例,在压印处理过程和光刻胶性质的品质鉴定中的一些应用,以及在压印处理过程的控制中的应用。 Put, in some applications, the embossing process characterization and properties of the photoresist, and the imprint process control application in Fig. 9 and 15 shown in FIGS. 3-6 shown embodiment.

困9画出实验上有关处理温度对压印速度影响的测量结果。 9 depicts processing difficulties related to the temperature measurement of velocity on the platen experimentally. 在每一情况中,同样的光刻胶(NP-46)有同样210nm的初始膜厚60。 In each case, the same photoresist (NP-46) have the same initial thickness of 60 to 210nm. The

15有压印都按80磅/英寸2的相同压力但不同的处理温度(30、 40、 50、 60、 70、 80、 100、和120。C)实施。 There are 15 press platen 80 lbs / inch 2 the same pressure but different treatment temperatures (30, 40, 50, 60, 70, 80, 100, and 120.C) embodiment. 数据表明,处理温度对模具挤入速度有显著影响,低温(30和40。C)时,光刻胶依然坚固,仅有施加的压力不能使光刻胶变形。 Data show that the treatment temperature has a significant influence on the mold squeeze velocity, low temperature (30 and 40.C), photoresist is still strong, the applied pressure can not only resist deformation. 在较髙的温度时,光刻胶软化,同时模 When the temperature of more Gao, photoresist softening, while die

具能够以增加的速度压入光刻胶中.数据还表明,本发明说明的计量学方法,对检测作为温度变化结果的压印速度变化,和光刻胶状态的变化(从固态到软化状态),有足够髙的灵敏度. With increased speed can be pressed into the resist. The data also show that, metrology methods of the invention described, the detection of the temperature change as a result of the embossing speed variations, and changes the state of the photoresist (from solid to softened state ), has sufficient sensitivity Gao.

图10画出实验上有关处理压力对压印速度影响的测量结果,在两种情况中,光刻胶(NP-46)有相同210imi的初始膜厚60。 For the experiment shown in FIG. 10 process pressure measurements of velocity on the platen, in both cases, a photoresist (NP-46) have the same 210imi initial film thickness of 60. 两次压印是在60。 Twice imprint is 60. C的相同处理溫度但不同的处理压力(80和100psi)下实施。 C, but the same process carried out at a temperature different from the processing pressure (80 and 100 psi). 图10画出在100磅/英寸2时,压印所用时间比更低的80磅/英寸2压力更短.数据还表明,本文说明的计量学方法,对指示作为压力变化结果的压印速度变化,有足够高的灵敏度。 10 shown in FIG. 2 100 lbs / inch, platen used time lower than 80 lb / in 2 pressure shorter. The data also show that, metrology methods described herein, as an indication of the speed of nip pressure change results changes have sufficiently high sensitivity.

图11画出实验上有关预压印光刻胶烘烤条件,对压印速度及对光刻胶性质影响的测量结果。 For the experiment shown in FIG. 11 imprint resist pre-baking conditions, and the measurement results of imprinting speed of the impact properties of the photoresist. 在每一情况中,光刻胶(NP-46)薄膜有相同210 nm的初始膜厚60。 In each case, the photoresist (NP-46) has an initial thickness of the film 60 the same at 210 nm. 所有压印都是在70°C和80磅/英寸2 下实施.压印前,膜用相同的90。 All are embossed at 70 ° C and 80 lb / in 2 at FIG. 90 the same pressure prepress film. C温度但不同的持续时间烘烤。 C temperature but different duration of baking. 一个样品在旋转涂布后及压印前不烘烤;另外三个样品分别烘烤15、 30、 和60分钟。 After a sample was spin coated and baked without prepress pressure; three samples were further baked 15, 30, and 60 minutes, respectively. 光刻胶因为烘烤,排出旋转涂布的薄膜中的溶刑,所以烘烤结果稍稍改变光刻胶的性质(例如玻璃相变温度Tg)。 Because photoresist baking, discharge punishment dissolved in the spin coating film, so that the baking result is slightly change the nature of the photoresist (e.g. glass transition temperature Tg). 图ll表明, 烘烤时间越长,把模具完全压入需要的时间也越长,图ll还表明,本发明说明的计量学方法,能够检测烘烤对光刻胶性质的影响。 FIG. Ll shows that the longer the baking time, the mold is fully pressed into the time required for the longer, FIG ll also show that the method of the present invention will be described metrology, the influence on the properties of the photoresist can be detected baking.

图12画出初始光刻胶膜厚60对压印速度的影响,所有压印都是在60。 Figure 12 Effect of initial resist film thickness 60 shown imprint rate, are all in the nip 60. C和80磅/英寸2下实施.光刻胶(NP-46)薄膜有不同的初始厚度(200、 400、和600 nm)。 C and 80 lbs / inch 2 embodiment the photoresist (NP-46) have different initial film thickness (200, 400, and 600 nm). 压印前,它们都在90°C下烘烤24 小时。 Prepress pressure, they are baked at 90 ° C 24 h. 对较厚的膜,有更多的光刻胶可用于填充模具图中的"空隙", 且模具与衬底之间的"缝,,将变得更大,使光刻胶更容易流进模具图中的空隙,结果是,增加初始膜厚60,有助于提高处理过程的速度。这一效应能够容易地用本文说明的计量学方法检测。困13A和13B分别是模拟的及实验的曲线,这些曲线表明光刻胶折射率与压印测试结果的关联。当压印中使用不同折射率的光刻胶时,折射牟可以影响测量的特征,模具深入比(Rp)定义为伸进模具沟槽的光刻胶髙度76与模具沟槽深度74之比。在压印期间,模具深入比从O增加到l,压印开始时,没有光刻胶伸进模具的沟槽,所以深入比是0;压印结束时,沟槽完全被光刻胶填充,所以深入比是l。 Of thick film photoresists can be used more in the filling of the mold of FIG. "Void", and "the seam between the mold and the substrate,, will become larger, more easily flow into the photoresist FIG mold voids, as a result, to increase initial film thickness 60, help speed up the process. this effect metrology methods described herein can be readily used to detect. 13A and 13B are trapped simulation and experiment curves which indicate that the refractive index of the imprint resist associated test result. when the imprint resist using different refractive indices of refraction can affect the measured characteristics Mu, mold depth ratio (Rp) is defined as extending into Gao photoresist mold of the grooves 76 of the mold 74 than the trench depth. during stamping, the mold extends into the mold resist depth than groove L increases from O, when the platen starts, not so depth ratio is 0; end of the platen, the trench is completely filled with photoresist, it is deeper than l.

困13A是对两种不同折射率(1.46和1.58)的光刻胶,用标量衍射模型计算的模拟结果,困上画出作为模具深入比函数的模拟的1级 13A is trapped photoresist two different refractive indices (1.46 and 1.58), the simulation result of the calculation by the scalar diffraction model, a simulation stage draw as a function of depth than the mold trapped

衍射强度(归一化).当光刻胶折射率Hr与模具折射率Hm完全匹配 Diffraction intensity (normalized). When the exact match for the refractive index of the resist and the mold refractive Hr Hm

(nr = nm-1.46,如困13A中的实线所示)时,衍射强度随增加的Rp 连续下降,并在压印结束时到达0。 (Nr = nm-1.46, 13A trapped in a solid line as shown), the diffraction intensity continuously decreased with increasing Rp, and reaches zero at the end of the platen. 但是,当nr与! However, when the nr! ^之间不匹配时, 与压印结束(Rp-1.0)对应的衍射该度的最后值,常常比零高。 ^ Mismatch between, and the end platen (Rp-1.0) of the diffraction of the last value corresponding to, often higher than zero. 例如, 我们已经计算了在Hr-1.58的愔形(图13A中的虚线),该折射率显著高于模具的折射率(熔融石英,nm = 1.46)。 For example, we have calculated (dashed line in FIG. 13A) of the serene shaped Hr-1.58, the refractive index is significantly higher than the refractive index of the mold (fused silica, nm = 1.46). 在该情形中,当模具的槽被部分填充(Rp~0.8)时,衍射强度达到零,但当Rp接近它的最后值1.0时,衍射强度向着终点略有增加. In this case, when the time is partially filled (Rp ~ 0.8) slot die, the diffraction intensity to zero, but close to its final value of Rp 1.0, the diffraction intensity increased slightly toward the end.

图13B对两种不同折射率的光刻胶,表明在压印处理过程期间, 实验上测量的作为时间函数的1级衍射强度。 FIG. 13B photoresist of two different refractive indices, indicated that during the embossing process, an experimentally measured diffraction intensity level as a function of time. 在这些实验中,使用图4所示同一个光栅模具。 In these experiments, a grating mold as shown in the same FIG. 4. 使用两种类型的热塑聚合物光刻胶:No.l聚合物的折射率n^l.46; No.2聚合物的折射率nr = 1.58 (用椭圃计确定)。 Two types of thermoplastic polymer resist: refractive index of the polymer No.l n ^ l.46; refractive index = 1.58 nr No.2 polymer (determined by ellipsometer garden meter). 在两种实验中,聚合物薄膜有相同的〜210iun的初始厚度60。 In both experiments, the polymer film with the same initial thickness of 60 ~210iun. 由于它们在玻璃相变温度上的差别,所以两种光刻胶用不同的条件压印,使两种情形下的压印处理过程,在时间上有可比较的持续时间。 Due to their phase transition temperature differences in the glass, so that two kinds of different conditions imprint resist the imprint process in both cases, has a duration comparable over time. No.l聚合物在100磅/英寸2和60°C温度下压印,而No.2聚合物在80磅/英寸2和80°C温度下压印。 No.l polymer at 100 lbs / square inch and a temperature of 60 ° C imprint, the imprint polymer and No.2 at 80 lb / in 2 and a temperature of 80 ° C. 数据表明,当nr与nm匹配时,衍射强度在压印结束时下降到零(No.l聚合物,图13B中实线)。 Data show that, when the match nr and nm, the diffraction intensity drops to zero at the end of the platen (No. L polymer, a solid line in FIG. 13B). 但是, 当nr比i^高时,在模具的槽被完全填充之前,衍射强度到达零,而在压印结束时,衍射强度接近非零的最终值(No.2聚合物,图13B中虚线)。 However, when i ^ nr higher than when the groove before the mold is completely filled, a diffraction intensity reaches zero at the end of the nip, close to the diffraction intensity of a non-zero final value (polymer No. 2, a broken line in FIG. 13B ). 实验与图13A所示标量衍射模型给出的模拟结果一致。 Experimental and simulation results of FIG. 13A consistent with scalar diffraction model given in FIG. 已说明的计量学方法,还能用于检测模具困线条对压印的影响, Metrology method has been described, but also for influencing the lines of the detected mold imprinting trapped,

一个这样的例子由困14所示数据说明,在该实验中,两个有相同lO Hm周期70和330nm的图深度74,但有不同的困线宽72的模具,被用于测试和比较。 One such example of FIG. 14 described by the data trapped in this experiment, two identical lO Hm period 7470 and FIG depth of 330nm, but trapped different die width of 72, are used to test and compare. 一个模具("窄的,,)有~330 nm的线宽72,而另一个("宽的,,)有~660 nm的线宽72,困14A画出用这两个模具, 对有〜220nm初始厚度60的光刻胶实施压印的实验结果。 A die ( "narrow ,,) with a line width of 72 ~ 330 nm, while the other (" wide ,,) has a line width of 72 ~ 660 nm, the two trapped drawn with the mold 14A, to have ~ initial thickness of 220nm photoresist 60 embodiment results embossed. 困14B画出用这两个模具,对有~350 nm初始厚度60的光刻胶实施压印的实验结果.在每一情形中,不同的模具图产生明显不同的压印曲线.图14A和图14B表明,本计量学方法能用于检测模具闺中测试线条(在本例中,是不同的线宽)对压印的影响。 14B trapped by these two molds shown, to have the initial thickness of ~ 350 nm photoresist 60 results embossed embodiment. In each case, a different mold platen FIG produce significantly different curve 14A and FIG. FIG. 14B shows that the present method can be used to detect metrology mold apartment in the test line (in this case, different line widths) on the platen. 本计量学方法同样能用于研究其他测试图线条(诸如图的尺寸、深度、密度、分布、两维困对一维困、和封闭的图对敞开的图)对压印和光刻胶流动过程的影响。 This same method can be used for metrology research lines in FIG other tests (such as the size of the FIG., Depth, density, distribution, two-dimensional one-dimensional FIG trapped trapped, and a closed versus open) and imprint resist flow influence the process.

借助本计量方法的应用,现在能在现场和实时地检测模具深入的深度。 With the present measurement method is applied, now on site and in real time the detected mold deep depth. 为此,可用如图8所示处理系统,对压印处理过程进行更精确的控制。 For this purpose, the processing system can be used as shown in FIG. 8, imprint process more precise control. 例如,现在能够控制压印处理过程的速度和模具的挤入度。 For example, it is possible to control the speed of the squeeze process and the embossing mold. 在图15,开始时在较低温度(~30°C)施加压力。 In Figure 15, pressure is applied at a relatively low temperature (~ 30 ° C) at the beginning. 在该低的温度下, 模具挤入速度是低的,随后是增加温度(至〜80。C)。 At this low temperature, low rate to squeeze into the mold, followed by increasing the temperature (to ~80.C). 光刻胶软化, 模具挤入速度增加。 The photoresist softening, increase the speed of the mold squeeze. 困15表明,本计量学方法,通过检测压印处理过程中出现的处理条件变化的影响,能在现场提供压印处理过程的控制。 15 trapped show that the metrology method, affect the processing conditions occur by detecting changes in embossing process, the embossing process can provide control in the field. 当模具困只需部分地压入光刻胶需要的深度时,本计量学方法还提供停止压印处理过程的可能性,从而实现指定深入深度76的可能性。 When the mold is only partially trapped resist penetration depth required, this metrology process further provides the possibility of stopping the imprint, in order to achieve a depth of 76 possibilities specified depth.

应当指出,本发明的方法能使用广泛的各种测试图,包括一维或两维周期阵列,这些阵列包含足够小的周期,使基本上只有一级衍射。 It should be noted that the method of the present invention can be used in a wide variety of test chart, comprising a one or two dimensional periodic array, which array comprises a period sufficiently small so that substantially only one diffraction. 测试图还可以是三维结构的,或是一组非周期的线条。 FIG test may also be that the three-dimensional structure of a superposition or aperiodic.

照明的辐射可以基本是单色的,可以包括多种波长,也可以包括多种波长的组合。 Radiation may be substantially monochromatic illumination may comprise a plurality of wavelengths, may also comprise a combination of a plurality of wavelengths. 它可以是偏振的(线偏振或椭圃偏振),可以是随机偏振的,也可以是非偏振的。 It may be polarized (linear polarization or elliptical polarization Po), it may be randomly polarized, or may be unpolarized. 照明可以按固定入射角照射,可以按变化的入射角扫描,也可以从多个光源照射。 Illumination incidence angle illumination may be fixed, by varying the angle of incidence can be scanned from a plurality of light sources may be irradiated.

本处理过程可以效果良好地用于监测广泛的各种压印处理过程参数,其中包括:光刻胶中模具的挤入、模具相对衬底或工件的运动速度、可塑表面的粘滞性、表面的玻璃相变温度、表面材料对棋具上线条的依从性、表面材料的固化速度、和表面材料的固化度,本处理过程还能提供表面材料流率的测量,而且借助应力灵敏的表面材料, 能够提供表面材料应力的测量。 Various process parameters imprinting process of the present process may be used to good effect to monitor a wide range, including: squeeze photoresist mold, a mold or the substrate relative to the speed of motion of the workpiece, the viscosity of the plastic surface, the surface the glass transition temperature, the surface material of the chess lines adherence, cure speed of the surface material, and curing of the surface material, the present process can also provide a measure of the flow of surface material, but also by the stress sensitive surface of the material, measurement is possible to provide a surface material stresses. 本处理过程指出模具相对于衬底的位移、模具相对于衬底的平行度,还能提供压印处理过程均匀性的测量. This process indicated displacement of the substrate relative to the mold, the mold with respect to the parallelism of the substrate, but also provide a measure of the uniformity of the imprint process.

模具的测试线条可以与模具体是同一种材料,或者可以由不同材料构成,而可塑表面可以是与衬底一样的材料、与衬底不同的材料、 或是复合层,如多层光刻胶。 The test line may be mold and the mold is specifically the same material, or may be composed of different materials, the plastic surface may be the same material as the substrate, the substrate of different material, or a composite layer, such as a multilayer resist .

工件可以承栽一种或多种线条图,这些线条困是作为功能线条预先形成的,或作为测试线条预先形成的,这些线条可结合模具测试图使用。 The workpiece may bear one or more plant line drawing, the lines are trapped preformed function as lines, or as a pre-formed test line, these lines may be used in conjunction with FIG Mold Test. 为了更精确或提供多种参数的监测,模具可以包括在工件上压印多种测试图线条.测量可以是静态的或时间分辨的。 In order to provide more accurate or more monitoring parameters, the imprint mold may comprise a plurality of test lines on FIG workpiece measurement may be static or time-resolved.

虽然已经参照优选实施例说明本发明,但本领域熟练人员应当清楚,在不偏离本发明的精神和范围下,可以对本发明在形式上和细节上作出改变, While the embodiment has been described with reference to preferred embodiments of the present invention, but those skilled in the art should be apparent without departing from the spirit and scope of the invention, the changes may be made in form and detail of the present invention,

Claims (39)

1. 一种在有可塑表面的工件的表面进行压印的方法中,监测或测量该方法的至少一个参数的方法,本方法包括的步骤有:提供有模压表面的模具,用于压印一组线条,其中包括供测量用的测试图;对可塑表面进行压印,包括把模压表面压入可塑表面的步骤;至少在一部分压印步骤期间,用辐射照射测试图;监测或测量从测试图散射、反射、或透射的辐射的至少一个分量,以监测或测量压印的至少一个参数。 1. A method for imprinting the surface of the workpiece with a plastic surface, at least one method for monitoring or measuring parameters of the process, the method comprising the steps of: providing a mold with a molding surface for imprinting a set of lines, which includes a test chart for measuring; imprinting on plastic surfaces, comprising the step of press-fitting surface of the molded plastic surface; at least during part of the embossing step, the test pattern with radiation; FIG monitored or measured from testing scattered, reflected, or transmitted radiation at least one component, the at least one parameter to be monitored or measured embossed.
2. 按照权利要求l的方法,其中的测试图包括一维或两维的周期性的阵列。 2. l The method of claim, wherein the test pattern comprises a one-dimensional or two-dimensional periodic array.
3. 按照权利要求2的方法, 的衍射只有一级衍射。 3. The method of diffraction according to claim 2, only one diffraction.
4. 按照权利要求1的方法: The method according to claim 1:
5. 按照权利要求l的方法,线条。 5. A method according to claim l, line.
6. 按照权利要求1的方法: The method according to claim 1:
7. 按照权利要求l的方法,波长组合的光。 7. The method according to claim l, the wavelength of the combined light.
8. 按照权利要求l的方法: 8. l method according to claim:
9. 按照权利要求l的方法, 9. The method of claim L,
10. 按照权利要求1的方法,振光。 10. The method according to claim 1, polarized light.
11. 按照权利要求l的方法,定的。 11. The method of claim l, given.
12. 按照权利要求l的方法,化的。 12. The method of claim l, of.
13. 按照权利要求l的方法,其中阵列的周期足够地小,以使它其中的测试图包括三维结构。 13. The method as claimed in claim l, wherein the periodic array is sufficiently small to make it a test chart which includes a three-dimensional structure. 其中的测试图包括一组非周期性的其中的辐射是单色的。 Wherein the test pattern comprises a set of aperiodic wherein radiation is monochromatic. 其中的辐射包括多种波长或由多种其中的辐射包括线偏振光。 Wherein the radiation comprises a plurality of wavelengths or radiation which comprises a plurality of linearly polarized light. 其中的辐射包括椭圆偏振光。 Wherein the radiation includes elliptically polarized light. 其中的辐射包括非偏振光或随机偏其中用于照射的辐射的入射角是固其中用于照射的辐射的入射角是变其中的辐射包括来自扫描光源或多个光源的光。 Wherein the radiation comprises partial random or unpolarized radiation exposure wherein the angle of incidence for which the angle of incidence is fixed for the radiation exposure is a variation wherein the radiation comprises light from a scanning light source or plurality of light sources.
14. 按照权利要求l的方法,其中辐射的至少一个分量,包括辐射的强度。 14. l The method of claim, wherein the at least one component of radiation, including radiation intensity.
15. 按照权利要求l的方法,其中辐射的至少一个分量,包括辐射的相位。 15. l The method of claim, wherein the at least one component of radiation, including radiation phase.
16. 按照权利要求l的方法,其中压印的至少一个参数,是光刻胶中模具的挤入度。 16. The method of claim l, wherein the at least one parameter of the platen, the degree of photoresist is extruded into a mold.
17. 按照权利要求l的方法,其中压印的至少一个参数,是模具相对于衬底的运动速度。 17. The method of claim l, wherein the at least one parameter of the platen, the mold is moved relative speed of the substrate.
18. 按照权利要求l的方法,其中压印的至少一个参数,选自如下一组参数,包括:表面的粘滞性、表面的玻璃相变温度、表面材料对模具上线条的依从度、表面材料的固化速度、和表面材料的固化度。 18. The method as claimed in claim l, wherein the embossed at least one parameter selected from a group of parameters including: viscosity, surface glass phase transition temperature of the surface of the compliance of the surface material on a mold line surface curing rate of the material, and curing the material of the surface.
19. 按照权利要求l的方法,其中压印的至少一个参数,是表面材料的流率。 19. The method of claim l, wherein the at least one parameter of the platen, is the flow rate of the surface material.
20. 按照权利要求18的方法,其中的表面材料是应力灵敏材料, 且其中压印的至少一个参数,是表面材料的应力。 20. The method according to claim 18, wherein the surface material is stress sensitive material, and wherein the at least one parameter of the platen, the stress of the surface material.
21. 按照权利要求l的方法,其中压印的至少一个参数,是模具相对于村底的位移。 21. The method of claim l, wherein the at least one parameter of the platen, the mold is displaced with respect to the bottom of the village.
22. 按照权利要求l的方法,其中压印的至少一个参数,是模具相对于衬底的平行度。 22. The method of claim l, wherein the at least one parameter of the platen, is the parallelism of the die relative to the substrate.
23. 按照权利要求l的方法,其中压印的至少一个参数,是压印处理过程的均勾性。 23. The method as claimed in claim l, wherein the at least one parameter of the imprint, the imprint is the average of the hook processing procedure.
24. 按照权利要求l的方法,其中模具的测试图,是制作在与组成模具的材料不同的材料中。 24. The method as claimed in claim l, wherein FIG test mold, is produced with the mold material of different materials.
25. 按照权利要求l的方法,其中的可塑表面,包括多层的光刻胶。 25. l The method of claim, wherein the plastic surface, comprising a multilayer photoresist.
26. 按照权利要求l的方法,其中的工件载有一个或多个图,这些图能够与模具上的线条结合,用于监测和测量的目的。 26. l The method of claim, wherein the workpiece contains one or more diagrams that can be combined with the line on the mold, for the purpose of monitoring and measurement.
27. 按照权利要求l的方法,其中模压表面,包括多个供测量用的测试图。 27. l The method of claim, wherein the molding surface, comprising a plurality of tests for the measurement of FIG.
28. 按照权利要求l的方法,其中的测量是静态测量。 28. The method of claim l, wherein the measurement is a static measurement.
29. 按照权利要求l的方法,其中的测量是时间分辨的测量。 29. The method of claim l, wherein the measurements are time-resolved measurement.
30. —种计量学器械,用于在有可塑表面及一组线条的工件表面进行压印的方法中,监测或测量该方法的至少一个参数,该组线条包括供测量用的测试图,本器械包括:照明系统,该照明系统至少在一部分压印步骤期间,用辐射照射至少一部分测试图;辐射检测系统,用于监测或测量从照射的测试图散射、反射、或透射的辐射中至少一个分量;和数据分析系统,用于分析检测的辐射分量,以提供压印方法的至少一个参数的测量。 30. - Species metrology instrument, there is a method for a plastic surface and a set of imprint lines workpiece surface, the measuring or monitoring at least one parameter of the process, the set of lines comprising a test chart used for the measurement, the present apparatus comprising: an illumination system, the illumination system is at least during a part of the embossing step, at least a portion of the radiation with the test chart; radiation detection system, for monitoring or measuring the test chart illuminated from scattered, reflected, or transmitted radiation in at least one of components; and data analysis system for analyzing the detected radiation components, at least one measurement parameter to provide an imprint method.
31. —种光刻器械,包括:压印器械,用于对有可塑表面及一组线条的工件表面进行压印, 其中该组线条包括供测量用的测试图; 权利要求30所述的计量学器械;和处理控制器,用于分析计量学器械的输出,并产生输出信号,以控制压印器械。 31. - species lithographic apparatus, comprising: embossing instrument, a surface of the workpiece with a plastic surface and imprinting of a set of lines, wherein the set of lines comprising a test chart used for the measurement; measurement according to claim 30 Science instrument; processing and a controller for analyzing the output metrology instrument, and generates an output signal to control the imprint apparatus.
32. 按照权利要求31的光刻器械,具有双重用途照明单元,该双重用途照明单元提供计量学上的辐射,和提供改变可塑表面性质的辐射o 32. A lithographic apparatus according to claim 31, having a dual-use lighting units, the lighting unit provides a dual purpose metrology radiation, and provide an altered surface properties of the radiation malleable o
33. —种压印光刻术方法,用于在有可塑表面的工件表面上,压印模具图,本方法包括的步骤有:提供有模压表面的模具,以便压印一组线条,该一组线条包括供测量用的测试图;把靠近工件的模具以模压表面紧邻可塑表面的方式放置; 把模压表面压入可塑表面;和把模压表面与可塑表面分离,使模压表面的压印图留在可塑表面,其中,至少在一部分加压步骤期间,用辐射照射至少一部分测试图,并测量和分析从照射的测试图散射、反射、或透射的辐射的至少一个分量,以控制压印处理过程的至少一个参数。 33. - kind of imprint lithography method for plastic surface on a workpiece surface, FIG imprint mold, the method comprising the steps of: providing a mold with a molding surface, so as to imprint a set of lines, the one set of lines comprising a test chart used for the measurement; placed close to the plastic surface of a workpiece immediately adjacent the mold surface to molded manner; pressed into the surface of the molded plastic surface; separated and the molding surface of the plastic surface, the molding surface of the impression left in FIG. the plastic surface, wherein, during at least part of the pressing step, at least a portion of the radiation with the test chart, and measuring and analyzing the test chart illuminated scattered, reflected, transmitted, or at least one component of the radiation, the imprint process to control at least one parameter.
34. 按照权利要求33的方法,其中的加压是通过机械压力产生的。 34. The method according to claim 33, wherein the pressure is generated by mechanical pressure.
35. 按照权利要求33的方法,其中的加压是通过液压产生的。 35. The method according to claim 33, wherein the hydraulic pressure is generated.
36. 按照权利要求33的方法,其中的加压是借助激光器对表面的辐射,使表面成为可塑的。 36. The method according to claim 33, wherein the pressurizing means is a laser radiation on the surface, the surface becomes malleable.
37. 按照权利要求33的方法,其中的加压是用静电或磁力产生的。 37. The method according to claim 33, wherein the pressure is generated by electrostatic or magnetic forces.
38. 按照权利要求33的方法,其中的至少一个分量,被用来产生反馈信号,供控制压印处理过程至少一个参数使用。 38. The method according to claim 33, wherein at least one component, is used to generate a feedback signal for controlling at least one parameter of the imprint process used.
39. 按照权利要求33的方法,其中压印处理过程中至少一个参数,选自如下一组参数,包括:模具位置、工件位置、模具与工件之间的叠放对准、压印温度、压印压力、和压印持续时间。 39. The method according to claim 33, wherein the embossing process at least one parameter selected from a set of parameters, comprising: a stacked alignment between the mold position, the position of the workpiece, the workpiece and the mold, the imprint temperature, pressure Indian pressure, and the imprint duration.
CN 200480022853 2003-06-09 2004-06-09 Imprint lithography with improved monitoring and control and apparatus therefor CN100526052C (en)

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