CN100522483C - Device for detecting interlayer membrane abnormal grinding and its realizing method - Google Patents
Device for detecting interlayer membrane abnormal grinding and its realizing method Download PDFInfo
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- CN100522483C CN100522483C CNB2006100286790A CN200610028679A CN100522483C CN 100522483 C CN100522483 C CN 100522483C CN B2006100286790 A CNB2006100286790 A CN B2006100286790A CN 200610028679 A CN200610028679 A CN 200610028679A CN 100522483 C CN100522483 C CN 100522483C
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CNB2006100286790A CN100522483C (en) | 2006-07-06 | 2006-07-06 | Device for detecting interlayer membrane abnormal grinding and its realizing method |
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CNB2006100286790A CN100522483C (en) | 2006-07-06 | 2006-07-06 | Device for detecting interlayer membrane abnormal grinding and its realizing method |
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CN101100046A CN101100046A (en) | 2008-01-09 |
CN100522483C true CN100522483C (en) | 2009-08-05 |
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CNB2006100286790A Expired - Fee Related CN100522483C (en) | 2006-07-06 | 2006-07-06 | Device for detecting interlayer membrane abnormal grinding and its realizing method |
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CN110328211B (en) * | 2019-06-19 | 2022-02-01 | 东莞高伟光学电子有限公司 | Separation method and chemical reagent for separating nonmetal sensor |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140110 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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TR01 | Transfer of patent right |
Effective date of registration: 20140110 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090805 Termination date: 20180706 |
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CF01 | Termination of patent right due to non-payment of annual fee |