CN100511742C

CN100511742C - Semiconductor device and method of fabricating the same

Info

Publication number: CN100511742C
Application number: CN 200710147742
Authority: CN
Inventors: 畑雅幸; 户田忠夫; 冈本重之; 井上大二朗; 别所靖之; 野村康彦; 山口勤
Original assignee: Sanyo Electric Co Ltd
Current assignee: Epistar Corp
Priority date: 2003-02-07
Filing date: 2004-02-06
Publication date: 2009-07-08
Anticipated expiration: 2024-02-06
Also published as: CN101222116A; CN101521254A; CN101114688A; CN101521254B; JP2009177211A; CN101222116B; CN101114687A; CN100533794C

Abstract

A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.

Description

Semiconductor element and manufacture method thereof

The application is that the application number that proposed on February 6th, 2004 is dividing an application of 200410004848.8 application of the same name.

Technical field

The present invention relates to semiconductor element and manufacture method thereof, especially relate to the semiconductor element that on substrate, is formed with semiconductor element layer with and manufacture method.

Background technology

Always well-known have light-emitting diode or semiconductor Laser device etc. as the semiconductor element that is formed with semiconductor element layer on substrate.This opens on flat 11-No. 21479 communiques open for example spy.

Open on flat 11-No. 214798 communiques above-mentioned spy and to disclose the nitride-based semiconductor laser device that on the nitride-based semiconductor substrate, is formed with a plurality of nitride-based semiconductor floor.Specifically, open on flat 11-No. 214798 communiques on the disclosed nitride-based semiconductor laser device order forms n type nitride-based semiconductor layer, formed by nitride-based semiconductor on n type GaN substrate luminescent layer and P type nitride-based semiconductor layer above-mentioned spy.And, on P type nitride-based semiconductor layer, form in ridge (ridge) portion as current path portion, in spine, form the P lateral electrode.In addition, form the n lateral electrode at the back side of n type GaN substrate.

On above-mentioned substrate back, form in the semiconductor element of electrode, when there is dislocation in substrate back, exist the zone of dislocation to produce leakage current at substrate back because of flowing through electric current.Therefore, open in the flat 11-214798 communique,, reduce the dislocation that exists on the n type GaN substrate by make n type GaN substrate by the transverse direction growth above-mentioned spy.As concrete method for preparing substrate, at first, after forming mask layer on the predetermined portions on the sapphire substrate, with this mask layer as selecting the growth mask layer, at sapphire substrate upper cross-square to growing n-type GaN layer.At this moment, n type GaN layer does not form on the sapphire substrate on the part of mask layer after the longitudinal direction growth selectively, little by little grows to transverse direction.So, because, misplace, propagate to longitudinal direction so suppressed dislocation to the transverse direction bending by to transverse direction growing n-type GaN layer.In view of the above, form the n type GaN layer of the dislocation minimizing that makes above arriving.By remove the zone (sapphire substrate etc.) of containing the mask layer that be positioned at n type GaN layer below, form n type GaN substrate that dislocation reduced thereafter.

, in the method for above-mentioned patent documentation 1, do not forming on the zone of the mask layer that longitudinal direction is grown, having the so-called improper situation that forms the dislocation concentrated part.When the n type GaN layer with zone that such dislocation concentrates is made n type GaN substrate, if form the n lateral electrode on the zone that the dislocation of n type GaN substrate back is concentrated, the improper situation of so-called leakage current then takes place to produce owing to the regional upper reaches overcurrent of concentrating in the dislocation of n type GaN substrate back.Because element becomes unstable deciding current drives time output in this case, so there is the so-called problem points that makes element working stability difficulty.

Summary of the invention

The present invention does in order to solve above-mentioned this problem, an object of the present invention is to provide the semiconductor element that may make the element working stabilityization.

Another object of the present invention provides the semiconductor device manufacturing method that may make the element working stabilityization.

In order to achieve the above object, the semiconductor element of the 1st situation of the present invention comprises as lower member, promptly having the substrate in the zone, the back side that dislocation concentrates on the part at least overleaf, at the semiconductor element layer that forms on the surface of substrate, at dielectric film that forms on the zone, the back side that dislocation is concentrated and the rear side electrode that forms in the mode that contacts with the zone, the back side of substrate beyond the zone, the back side that dislocation is concentrated.

In the semiconductor element of the 1st situation, as noted above, when the zone that the substrate back dislocation is concentrated forms dielectric film, because by forming the rear side electrode in the mode that contacts with zone beyond the zone that substrate back dislocation is concentrated, the zone that topped substrate back dislocation is concentrated, it is not exposed from dielectric film, flow through the leakage current that electric current produces so can easily suppress to result from the concentrated zone of substrate back dislocation.Its result because can easily make element decide the output stabilization of current drives time, can easily make the semiconductor element working stabilityization.In addition, because can reduce the electric current that flows through of dislocation concentrated area, so can reduce come from the dislocation concentrated area unnecessary luminous.

In the semiconductor element of above-mentioned the 1st situation, the preferred part on the surface at least of semiconductor element layer has the surf zone that dislocation is concentrated, and also comprises the face side electrode that forms in the mode that contacts with the zone on surface of semiconductor element layer beyond the surf zone that dislocation is concentrated.According to this formation, can suppress because of flowing through the leakage current that electric current produces in the semiconductor element laminar surface dislocation concentrated area.Its result, because the light output stabilization can make element decide current drives the time, so even, also can make semi-conductive working stabilityization in the zone that the semiconductor element laminar surface also exists dislocation to concentrate.In addition, because can reduce the electric current that flows through in the zone that dislocation concentrates, so can reduce unnecessary luminous from the dislocation concentrated area.

In the semiconductor element of above-mentioned the 1st situation, substrate also can comprise the nitride-based semiconductor substrate.According to such formation, can be suppressed at the generation of leakage current on the nitride-based semiconductor substrate.

According to the semiconductor element of the 2nd situation of the present invention, comprise as lower member, that is: at the semiconductor element layer that forms on the substrate surface, on a surperficial at least part, have the concentrated surf zone of dislocation; The dielectric film that on the surf zone that dislocation is concentrated, forms; And the face side electrode that forms in the mode that contacts with the surf zone of semiconductor element layer beyond the surf zone that dislocation is concentrated.

In the semiconductor element of the 2nd situation, as noted above, form in the dielectric film on the zone that dislocation is concentrated on the semiconductor element laminar surface, by forming the face side electrode in the mode that contacts with zone beyond the zone that semiconductor element laminar surface dislocation is concentrated, semiconductor element laminar surface dislocation concentrated area is by topped, so that do not expose, thus, can easily be suppressed on the concentrated zone of semiconductor element laminar surface dislocation and flow through the leakage current that produces because of electric current from dielectric film.Its result, because the light output stabilization can easily make element decide current drives the time, so can easily make the semiconductor element working stabilityization.In addition, because can reduce the electric current that zone that dislocation concentrates is flow through, so can reduce unnecessary luminous from the dislocation concentrated area.

In the semiconductor element of above-mentioned the 2nd situation, substrate preferably has the zone, the back side that dislocation is concentrated at least overleaf the part, also comprises the rear side electrode that forms in the mode that contacts with the zone, the back side of substrate beyond the zone, the back side that dislocation is concentrated.According to such formation, can suppress to flow through the leakage current that produces because of substrate back dislocation concentrated area electric current.Its result is because the light output stabilization can make element decide current drives the time, so even also exist at substrate back under the situation in the zone that dislocation concentrates, also can make the semiconductor element working stabilityization.In addition, because can reduce the electric current that flows through on the zone that dislocation concentrates, so can reduce come from the concentrated zone that misplaces unnecessary luminous.

In this case, substrate also can comprise the nitride-based semiconductor substrate.According to such formation, can be suppressed at the generation of leakage current on the nitride-based semiconductor substrate.

In this case, the side of rear side electrode preferably be arranged on leave substrate the side with the predetermined space position spaced.According to such formation, for example, on the lateral electrode during welding scolder, can suppress the lateral ends that scolder flows to the semiconductor element layer that forms on the substrate always overleaf.In view of the above, can suppress the generation of the bad short circuit of semiconductor element.

In this case, preferably also be included in the dielectric film that forms on the concentrated zone, the back side of dislocation.According to such formation, because the zone that the substrate back dislocation is concentrated is capped, so that do not expose, so electric current flows through the leakage current that produces on the zone that can suppress to concentrate because of the substrate back dislocation from dielectric film.

The semiconductor element of the present invention's the 3rd situation be included in form on the substrate surface, on a surperficial part, have a semiconductor element layer of the surf zone that dislocation concentrates at least; The recess that on the surf zone zone more in the inner part of concentrating, forms than dislocation; And the semiconductor side electrode that forms in the contacted mode of surf zone of the semiconductor element layer beyond the surf zone of concentrating with dislocation.

At semiconductor element according to the 3rd situation, as noted above, when on than semiconductor element laminar surface dislocation zone more in the inner part, concentrated area, forming recess, by forming the face side electrode in the regional contacted mode beyond the zone of concentrating with semiconductor element laminar surface dislocation, electric current flows through the leakage current that produces on the zone that can suppress to concentrate because of the dislocation of semiconductor element laminar surface.Its result, because the light output stabilization can make element decide current drives the time, so can make the semiconductor element working stabilityization.In addition, under the example as semiconductor element is used in situation in the light-emitting component, because by recess will than semiconductor element laminar surface dislocation concentrated area more in the inner part the zone and the semiconductor element laminar surface dislocation zone of concentrating separately, so the light that takes place in the zone more in the inner part, zone of concentrating than the dislocation of semiconductor element laminar surface can suppress the light that absorbed by semiconductor element laminar surface dislocation concentrated area.In view of the above, the light that the zone absorbs because can suppress to be misplaced concentrated is luminous again under wavelength arbitrarily, so can suppress because of so luminous again colorimetric purity variation that produces.

In the semiconductor element of above-mentioned the 3rd situation, substrate preferably has the zone, the back side that dislocation is concentrated at least overleaf the part, also comprises the rear side electrode that the contacted mode in zone, the back side with the substrate beyond the zone, the back side of concentrating with dislocation forms.According to such formation, can suppress to flow through the leakage current that produces because of substrate back dislocation concentrated area electric current.Its result is because the light output stabilization can make element decide current drives the time, so even also exist at substrate back under the situation in the zone that dislocation concentrates, also can make the semiconductor element working stabilityization.In addition, because can reduce the electric current that dislocation is flow through in the concentrated area, so can reduce come from the dislocation concentrated area unnecessary luminous.

In this case, preferably also be included in the dielectric film that forms on the zone, the back side that aforementioned dislocation is concentrated on the substrate back.According to such formation, because the zone that the substrate back dislocation is concentrated is capped, so that do not expose, so electric current flows through the leakage current that produces on the zone that can easily suppress to concentrate because of the substrate back dislocation from dielectric film.

The semiconductor element of the present invention's the 4th situation is included in the semiconductor element layer that forms on the substrate surface, have the concentrated surf zone of dislocation on a surperficial at least part; The high resistance area that on the surf zone that dislocation is concentrated, forms; With the face side electrode that forms in the contacted mode of surf zone with the concentrated surf zone semiconductor element layer in addition that misplaces.

In the semiconductor element of the 4th situation, as noted above, when on the zone that the dislocation of semiconductor element laminar surface is concentrated, forming high resistance area, by forming the face side electrode in dislocation concentrated area regional contacted mode in addition with the semiconductor element laminar surface, the zone that the dislocation of semiconductor element laminar surface is concentrated must be difficult to flow through owing to being formed with the high resistance area electrorheological, so can suppress to produce leakage current because of the concentrated regional electric current of semiconductor element laminar surface dislocation flows through.Its result because can easily make element decide current drives the time the light output stabilization, so can easily make the semiconductor element working stabilityization.In addition, because can reduce the electric current that flows through in the zone that dislocation concentrates, so can reduce come from the concentrated zone that misplaces unnecessary luminous.

In the semiconductor element of above-mentioned the 4th situation, high resistance area preferably comprises the impurity-introduced layer that forms by importing impurity.According to such formation, can easily in the zone that the dislocation of the surface of semiconductor element layer is concentrated, form high resistance area.

In the semiconductor element of above-mentioned the 4th situation, has the zone, the back side that dislocation is concentrated on the preferred part at least overleaf of substrate, also comprise the rear side electrode that forms in the contacted mode in zone, the back side with concentrated zone, the back side substrate in addition that misplaces, according to such formation, can suppress leakage current to take place because of the concentrated regional electric current of substrate back dislocation flows through.Its result is because the light output stabilization can make element decide current drives the time, so even also exist at substrate back under the situation in the zone that dislocation concentrates, also can make the semiconductor element working stabilityization.In addition, because can reduce the electric current that flows through in the zone that dislocation concentrates, so can reduce come from the concentrated zone that misplaces unnecessary luminous.

In this case, preferably also be included in the dielectric film that forms on the concentrated zone, the back side of dislocation.According to such formation, because the zone that the substrate back dislocation is concentrated is capped, so that do not expose, so electric current flows through the leakage current that produces in the zone that can easily suppress to concentrate because of the substrate back dislocation from dielectric film.

In the semiconductor element of above-mentioned the 4th situation, substrate also can comprise the nitride-based semiconductor substrate.According to such formation, can be suppressed on the nitride-based semiconductor substrate and produce leakage current.

The semiconductor element of the 5th situation of the present invention be included in form on the substrate surface, on a surperficial part, have the surf zone that dislocation is concentrated at least, simultaneously, also comprise the semiconductor element layer that contains active layer; With the face side electrode that the contacted mode of surf zone of the semiconductor element layer beyond the surf zone of concentrating with dislocation forms, removes the predetermined thickness part above the surf zone that dislocation is concentrated, and be positioned at more below of specific activity layer.

In the semiconductor element of the 5th situation of the present invention, as noted above, remove preset thickness part (so that being positioned at more below of specific activity layer above the zone that the dislocation of semiconductor element laminar surface is concentrated) by the zone that the dislocation to the semiconductor element laminar surface is concentrated, under the situation that forms pn interface (so that clamping active layer), because removed the concentrated zone of dislocation that forms by the pn interface, so can suppress to flow through the leakage current that produces because of electric current in the dislocation concentrated area.Its result, because the light output stabilization can easily make element decide current drives the time, so can easily make the semiconductor element working stabilityization.In addition, because can reduce the electric current that zone that dislocation concentrates is flow through, so can reduce come from the concentrated zone that misplaces unnecessary luminous.

In the semiconductor element of above-mentioned the 5th situation, the active layer preferably surf zone of the semiconductor element layer beyond the surf zone that dislocation is concentrated forms.According to such formation, under the situation that forms pn interface (so that clamping active layer), can easily suppress because of form the leakage current that the dislocation concentrated area produces by the pn interface.

In this case, be preferably, semiconductor element layer is included in first semiconductor layer of first conductivity type that forms under the active layer; First semiconductor layer comprises to have and is positioned at than the first area of dislocation concentrated area first thickness more in the inner part and has zone that dislocation concentrates and the second area that has second thickness also littler than first thickness simultaneously; Active layer has the width also littler than the first area width of first semiconductor layer.According to such formation, under the situation that forms pn interface (so that clamping active layer), because the pn interface is also littler than the first area of first semiconductor layer, so can reduce the pn junction capacitance.In view of the above, can make the response speed high speed of semiconductor element.

The semiconductor element of the 6th situation of the present invention comprises: contain and have surf zone that dislocation concentrates and the substrate that has the second area of second thickness also littler than first thickness simultaneously on a first area with first thickness and the surperficial at least part; The semiconductor element layer that forms on the first area of the substrate surface beyond second area; With face side electrode to form with the contacted mode of semiconductor element laminar surface.

In the semiconductor element of the 6th situation of the present invention, as noted above, because when forming semiconductor element layer on the first area beyond second area with substrate surface dislocation concentrated area, by being formed in contact the face side electrode with the semiconductor element laminar surface, on semiconductor element layer, do not form the zone that dislocation is concentrated, so can suppress to flow through the leakage current that produces because of the regional electric current of concentrating in dislocation.Its result, because the light output stabilization can easily make element decide current drives the time, so can make the semiconductor element working stabilityization easily.In addition, because can reduce the electric current that dislocation is flow through in the concentrated area, so can reduce come from the dislocation concentrated area unnecessary luminous.

In the semiconductor element of above-mentioned the 6th situation, semiconductor element layer preferably comprises first semiconductor layer of first conductivity type, the active layer that forms and the 2nd semiconductor layer of the 2nd conductivity type that forms on active layer on first semiconductor layer.According to such formation, because first semiconductor layer and the pn tie region between the 2nd semiconductor that form through active layer do not form the zone that dislocation is concentrated, so can easily suppress to produce leakage current because of dislocation concentrated area electric current flows through.

In this case, active layer preferably has than the also little width of the first semiconductor layer width.According to such formation, because diminish, so can reduce because the pn junction capacitance that first semiconductor layer and the 2nd semiconductor layer produce through first semiconductor layer of active layer formation and the pn interface between the 2nd semiconductor layer.In view of the above, can make the response speed high speed of semiconductor element.

In the semiconductor element of the 7th situation of the present invention, comprise the substrate that on the part on surface, has the concentrated surf zone of dislocation at least; The first selection growth mask that forms on the surf zone of the surf zone substrate more in the inner part that the ratio dislocation is concentrated, have the also little width of the surf zone width more concentrated than dislocation; The semiconductor element layer that on the surf zone of the substrate beyond the zone that is formed with the first selection growth mask, forms; With be positioned at the face side electrode of selecting the growth mask contacted mode of semiconductor element laminar surface more in the inner part to form than first.

In the semiconductor element of the present invention's the 7th situation, as noted above, on than the zone more in the inner part, dislocation concentrated area on the substrate surface, have first of the width also littler by formation and select growth mask than dislocation concentrated area width, when making the semiconductor element layer growth on the substrate surface, because select on the growth mask not growing semiconductor element layer first, so the semiconductor element layer that forms on the zone more in the inner part, zone that dislocation is concentrated on than substrate surface, and form recess between the semiconductor element layer that forms in the zone that dislocation on the substrate surface is concentrated.Therefore, can separately be formed with the semiconductor element layer of the semiconductor element layer of dislocation concentrated area and the concentrated area that form to misplace by recess.In this case, by to form the face side electrode, can suppress to flow through the leakage current that produces because of electric current in semiconductor element laminar surface dislocation concentrated area with the surperficial contacted mode that is positioned at than first selection growth mask semiconductor element layer more in the inner part.Its result, because the light output stabilization can make element decide current drives the time, so can make the semiconductor element working stabilityization.In addition, under the situation about in light-emitting component, using as semiconductor element one example, by recess can splitting ratio semiconductor element laminar surface the dislocation zone more in the inner part, zone of concentrating, the zone of concentrating with semiconductor element laminar surface dislocation is so the light that produces in the zone more in the inner part, zone of concentrating than the surface dislocation of semiconductor element layer can suppress the light that the zone absorbed concentrated by the dislocation of semiconductor element laminar surface.In view of the above, luminous again because the light that the zone of being concentrated by dislocation absorbs can be suppressed under any wavelength, so can suppress because of so luminous again colorimetric purity variation that produces.In addition, in the 7th situation, because select the growth mask width by reducing first, make to reach first and select the total amount of the whole unstrpped gas in growth mask surface to tail off, select the growth mask surface to select near the surface of the semiconductor element layer of the growth the growth mask to carry out the unstrpped gas of diffusion into the surface or the amount of its analyte to being arranged in first so can correspondingly reduce from first.In view of the above, be arranged in first and select the unstrpped gas of growth mask growth semiconductor element laminar surface nearby or the amount of its analyte, select growth mask semiconductor element layer thickness nearby to become big so can suppress to be positioned at first because can reduce to be supplied to.Its result can be suppressed at first and select nearby position and select the thickness of growth mask position semiconductor element layer far away to become inhomogeneous from first of growth mask.

In the semiconductor element of above-mentioned the 7th situation, preferably also be included in than first and select to select growth mask to separate the second selection growth mask of formation with predetermined space from first on the growth mask zone more in the outer part.According to such formation, for example select growth mask by on substrate surface dislocation concentrated area, forming second, because when growing semiconductor element layer on the substrate surface, select on the growth mask not growing semiconductor element layer second, form dislocation on the semiconductor element layer so can be suppressed at.

In this case, preferably on the surf zone that dislocation is concentrated, form second and select growth mask.According to such formation, can easily be suppressed at and form dislocation on the semiconductor element layer.

The manufacture method of the semiconductor element of the 8th situation of the present invention, comprise following operation, that is: on the surface of the substrate that has the zone, the back side that dislocation concentrates on the part at the back side at least, form the operation of semiconductor element layer, with to form the operation of rear side electrode with the contacted mode of substrate back, with with after semiconductor element layer and rear side electrode form, removing the operation in the zone, the back side that dislocation concentrates.

In the manufacture method of the semiconductor element of the 8th situation, as noted above, after semiconductor element layer and rear side electrode form,, can easily suppress to flow through the leakage current that produces because of electric current on misplacing the concentrated area at substrate back by removing the dislocation concentrated area.Its result, because the light output stabilization can easily make element decide current drives the time, so can easily make the semiconductor element of working stability.In addition, under situation about using in light-emitting component as an example of semiconductor element, the light that produces at semiconductor element layer can easily suppress to be absorbed by the zone that the substrate back dislocation is concentrated.In view of the above, because it is luminous again under any wavelength easily to be suppressed at the dislocation light that the concentrated area absorbed, so can suppress because of so luminous again colorimetric purity variation that produces.

In the manufacture method of the semiconductor element of above-mentioned the 8th situation, operation that removing the zone, the back side that dislocation concentrates preferably comprises with same widths in fact removes from the operation of substrate back till the semiconductor element laminar surface.According to such formation, can easily remove the perforation of extending up to the semiconductor element laminar surface and misplace from substrate back.

In the manufacture method of the semiconductor element of above-mentioned the 8th situation, substrate also can comprise the nitride-based semiconductor substrate.According to such formation, can easily form the nitride-based semiconductor device that may be suppressed at the generation of leakage current on the nitride semiconductor base plate.

Description of drawings

Fig. 1 is the sectional view of nitride-based semiconductor laser device (semiconductor element) structure that the present invention's the 1st execution mode is shown.

Fig. 2 is the amplification sectional view that the nitride-based semiconductor laser device luminescent layer details of the 1st execution mode shown in Figure 1 is shown.

Fig. 3～Figure 12 is the sectional view that is used to illustrate the nitride-based semiconductor laser device manufacture process of the 1st execution mode shown in Figure 1.

Figure 13 is the sectional view of nitride-based semiconductor laser device (semiconductor element) structure that the present invention's the 2nd execution mode is shown.

Figure 14 and Figure 15 are the sectional views that is used to illustrate the nitride-based semiconductor laser device manufacture process of the 2nd execution mode shown in Figure 13.

Figure 16 is the sectional view of light-emitting diode (semiconductor element) structure that the present invention's the 3rd execution mode is shown.

Figure 17～Figure 21 is the sectional view of manufacture process that is used to illustrate the light-emitting diode of the 3rd execution mode shown in Figure 16.

Figure 22 is the sectional view of nitride-based semiconductor laser device (semiconductor element) structure that the present invention's the 4th execution mode is shown.

Figure 23～Figure 26 is the sectional view that is used to illustrate the nitride-based semiconductor laser device manufacture process of the 4th execution mode shown in Figure 22.

Figure 27 is the sectional view of light-emitting diode (semiconductor element) structure that the present invention's the 5th execution mode is shown.

Figure 28 is the sectional view that is used to illustrate the light-emitting diode manufacture process of the 5th execution mode shown in Figure 27.

Figure 29 is the sectional view of nitride-based semiconductor laser device (semiconductor element) structure that the 6th execution mode of the present invention is shown.

Figure 30 is the sectional view of nitride-based semiconductor laser device (semiconductor element) structure that the 7th execution mode of the present invention is shown.

Figure 31 is the sectional view of nitride-based semiconductor laser device structure that the 1st variation of the 7th execution mode shown in Figure 30 is shown.

Figure 32 is the sectional view of nitride-based semiconductor laser device structure that the 2nd variation of the 7th execution mode shown in Figure 30 is shown.

Figure 33 is the sectional view of nitride-based semiconductor laser device (semiconductor element) structure that the present invention's the 8th execution mode is shown.

Figure 34 is the sectional view of nitride-based semiconductor laser device (semiconductor element) structure that the present invention's the 9th execution mode is shown.

Figure 35～Figure 38 is the sectional view that is used to illustrate the nitride-based semiconductor device laser diode manufacture process of the 9th execution mode shown in Figure 34.

Figure 39 is the sectional view of nitride-based semiconductor laser device (semiconductor element) structure that the 10th execution mode of the present invention is shown.

Figure 40～Figure 45 is the sectional view that is used to illustrate the nitride-based semiconductor laser device manufacture process of the 10th execution mode shown in Figure 39.

Figure 46 is the sectional view of nitride-based semiconductor laser device (semiconductor element) structure that the present invention's the 11st execution mode is shown.

Figure 47 and Figure 48 are the sectional views that is used to illustrate the nitride-based semiconductor laser device manufacture process of the 11st embodiment shown in Figure 46.

Figure 49 is the sectional view of nitride-based semiconductor laser device (semiconductor element) structure that the present invention's the 12nd execution mode is shown.

Figure 50 is the sectional view that is used to illustrate the nitride-based semiconductor laser device manufacture process of the 12nd execution mode shown in Figure 49.

Figure 51 is the sectional view of nitride-based semiconductor laser device (semiconductor element) structure that the present invention's the 13rd execution mode is shown.

Figure 52～Figure 55 is plane graph and the sectional view that is used to illustrate the nitride-based semiconductor laser device manufacture process of the 13rd execution mode shown in Figure 51.

Figure 56 is the sectional view of nitride-based semiconductor laser device (semiconductor element) structure that the present invention's the 14th execution mode is shown.

Figure 57～Figure 60 is plane graph and the sectional view that is used to illustrate the nitride-based semiconductor laser device manufacture process of the 14th execution mode shown in Figure 56.

Figure 61 is the plane graph of nitride-based semiconductor laser device manufacture process that is used to illustrate the variation of the 14th execution mode.

Figure 62 is the plane graph that the nitride-based semiconductor laser device structure of the present invention's the 15th execution mode is shown.

Figure 63 is the sectional view along the 500-500 line of Figure 62.

Figure 64 is the sectional view that the nitride-based semiconductor laser device luminescent layer details of the 15th execution mode shown in Figure 62 and Figure 63 is shown.

Figure 65 is the oblique view of semiconductor laser structure that the nitride-based semiconductor laser device of the 15th execution mode shown in Figure 62 and Figure 63 is shown.

Preferred implementation

Below, based on the description of drawings embodiments of the present invention.

(the 1st execution mode)

At first, with reference to Fig. 1 and Fig. 2, the structure of the nitride-based semiconductor laser device of the 1st execution mode is described.

In the nitride-based semiconductor laser device of the 1st execution mode, as shown in Figure 1, have about 100 μ m thickness and be doped with and have 5 * 10 ¹⁸Cm ^-3On (0001) face of the n type GaN substrate 1 of the wurtzite-type of the oxygen of carrier concentration structure, form have about 100nm thickness and have about 5 * 10 by being doped with ¹⁸Cm ^-3The n type layer 2 that constitutes of the n type GaN of Si of doping.On n type layer 2, form have about 400nm thickness and have about 5 * 10 by being doped with ¹⁸Cm ^-3Doping and about 5 * 10 ¹⁸Cm ^-3The n type Al of the Si of carrier concentration _0.05Ga _0.95The n type covering 3 that N constituted.N type GaN substrate 1 is an example of " substrate " of the present invention and " nitride-based semiconductor substrate ", and n type layer 2 and n type covering 3 are examples of " semiconductor element layer " of the present invention.

On n type covering 3, be formed with luminescent layer 4.This luminescent layer 4 as shown in Figure 2, is made of n type charge carrier blocking layer 4a, n type photoconductive layer 4b, multiple quantum trap (MQW) active layer 4e, P type photoconductive layer 4f and P type clearance layer 4g.N type charge carrier blocking layer 4a has about 5nm thickness, and has about 5 * 10 by being doped with ¹⁸Cm ^-3Doping and about 5 * 10 ¹⁸Cm ^-3The n type Al of the Si of carrier concentration _0.1Ga _0.9N constitutes.N type photoconductive layer 4b has about 100nm thickness, and has about 5 * 10 by being doped with ¹⁸Cm ^-3Doping and about 5 * 10 ¹⁸Cm ^-3The n type GaN of the Si of carrier concentration constitutes.In addition, MQW active layer 4e alternately lamination have the plain In of about 20nm thickness _0.05Ga _0.954 layers of barrier layer 4c that N constitutes and have the plain In of about 3nm thickness _0.15Ga _0.853 layers of trap layer 4d that N constitutes.In addition, P type photoconductive layer 4f has about 4 * 10 by being doped with when having about 100nm thickness ¹⁹Cm ^-3Doping and about 5 * 10 ¹⁷Cm ^-3The P type GaN of the Mg of carrier concentration constitutes.P type clearance layer 4g has about 4 * 10 by being doped with when having about 20nm thickness ¹⁹Cm ^-3Doping and about 5 * 10 ¹⁷Cm ^-3The P type Al of the Mg of carrier concentration _0.1Ga _0.9N constitutes.Luminescent layer 4 is examples of " semiconductor element layer " of the present invention.

And, as shown in Figure 1, on luminescent layer 4, form when having protuberance, and be doped with by having about 4 * 10 ¹⁹Cm ^-3Doping and about 5 * 10 ¹⁷Cm ^-3The P type Al of the Mg of carrier concentration _0.05Ga _0.95The P type covering 5 that N constitutes.The protuberance of this P type covering 5 has about 1.5 μ m width and about 300nm height.In addition, the par beyond the protuberance of P type covering 5 has about 100nm thickness.And, on the protuberance of P type covering 5, form have about 10nm thickness and have about 4 * 10 by being doped with ¹⁹Cm ^-3Doping and about 5 * 10 ¹⁷Cm ^-3The P type contact layer 6 that the P type GaN of the Mg of carrier concentration constitutes.And protuberance by P type covering 5 and P type contact layer 6 constitute the spine 7 of the strip (elongated shape) that extends to predetermined direction.P type covering 5 and P type contact layer 6 are examples of " semiconductor element layer " of the present invention.

And, constituting on the P type contact layer 6 of spine 7, form by Pt layer, have the Pd layer of about 100nm thickness and have the P side Ohmic electrode 9 that the Au layer of about 150nm thickness constitutes to the upper strata from lower floor with about 5nm thickness.P side Ohmic electrode 9 is examples of " face side electrode " of the present invention.In addition, on the surface, par beyond the protuberance of P type covering 5, form the dielectric film 10 that constitutes by SiN, so that cover the side of spine 7 and P side Ohmic electrode 9 with about 250nm thickness.On dielectric film 10 surfaces, form by having about 100nm thickness T i layer, have about 100nm thickness Pd layer and have the P side liner electrode 11 that about 3 μ m thickness A u layers constitute to the upper strata from lower floor, so as with contact above the P side Ohmic electrode 9.

Here, near n type GaN substrate 1 and each layer of nitride-based semiconductor (2～5) end, extending in the surface, par of P type covering 5 from n type GaN substrate 1 back side, the concentrated zone 8 of dislocation with about 10 μ m width forms strip (elongate) with about 400 μ m cycles.And, in the 1st execution mode, form by SiO with about 250nm thickness and about 40 μ m width ₂The dielectric film 12 that film constitutes is so that cover dislocation concentrated area 8 on n type GaN substrate 1 back side.In addition, on the back side of n type GaN substrate 1, form n lateral electrode 13,, cover dielectric film 12 misplacing the concentrated area 8 regional contacted while in addition with n type GaN substrate 1 back side.This n lateral electrode 13 is according to the order from beginning near n type GaN substrate 1 back side, is made of the Al layer with about 10nm thickness, the Au layer that has the Pt layer of about 20nm thickness and have about 300nm thickness.N lateral electrode 13 is examples of " rear side electrode " of the present invention.

In the 1st execution mode, as noted above, on the zone 8 that dislocation is concentrated on n type GaN substrate 1 back side, when forming dielectric film 12, form n lateral electrode 13, so that contact with exterior domain, in view of the above with dislocation concentrated area, n type GaN substrate 1 back side 8, because being capped, the zone 8 that the dislocation of n type GaN substrate 1 back side is concentrated do not expose, so can suppress because of flowing through the leakage current that produces at dislocation concentrated area, n type GaN substrate 1 back side 8 electric currents from dielectric film 12.Its result because can easily make element decide the output stabilization of current drives time, so can easily make the semiconductor element working stabilityization.In addition, because can reduce the electric current that flows through of dislocation concentrated area, so can reduce unnecessary luminous from dislocation concentrated area 8.

Secondly, with reference to Fig. 1～Figure 12, the manufacture process of the nitride-based semiconductor laser device of the 1st execution mode is described.

At first, with reference to Fig. 3～Fig. 6, n type GaN substrate 1 forming process is described.Specifically, as shown in Figure 3, (Metal Organic Chemical Vapor Deposition: the method metal organic-matter chemical gas deposition), under about 600 ℃ state, growth has the AlGaN layer 22 of about 20nm thickness on sapphire substrate 21 at the maintenance substrate temperature with MOCVD.Thereafter, change substrate temperature to about 1100 ℃, growth has the GaN layer 23 of about 1 μ m thickness on Al GaN layer 22.At this moment, region-wide at GaN layer 23, the dislocation of propagating to longitudinal direction is with about 5 * 10 ⁸Cm ^-2More than (for example about 5 * 10 ⁹Cm ^-2) density form.

Secondly, as shown in Figure 4, use plasma CVD method, on GaN layer 23, separate at interval,, form by SiN or SiO with about 390 μ m width and about 200nm thickness according to strip (elongate) with about 400 μ m cycles with about 10 μ m ₂The mask layer 24 that constitutes.

Secondly, as shown in Figure 5, with HVPE (Halide Vapor Phase Epitaxy: method halide vapour phase oriented growth), keeping under the about 1100 ℃ state of substrate temperature, as selecting growth mask, on GaN23, have about 5 * 10 with mask layer 24 by being doped with ¹⁸Cm ^-3The n type GaN layer 1a of the oxygen of carrier concentration has about 150 μ m thickness and transverse direction growth.Its border, n type GaN layer 1a selectively after the longitudinal growth, little by little grows to transverse direction on not forming the GaN layer 23 of mask layer 24.Therefore, be positioned on the n type GaN layer 1a on the GaN layer 23 that does not form mask layer 24, be formed on about 5 * 10 according to strip (elongate) with about 10 μ m width ⁸Cm ^-2More than (for example, about 5 * 10 ⁹Cm ^-2) the density dislocation of the propagating zone 8 of concentrating to longitudinal direction.It because on the n type GaN layer 1a that is positioned on the mask layer 24, by transverse direction growing n-type GaN layer 1a, misplaces to the transverse direction bending on the other hand, so be difficult to form the dislocation of propagating to longitudinal direction, dislocation density is about 5 * 10 ⁷Cm ^-2Below (for example about 1 * 10 ⁶Cm ^-2).Thereafter, remove contain be positioned at n type GaN layer 1a below the zone (sapphire substrate 21 etc.) of mask layer 24.So, as shown in Figure 6, formation has about 5 * 10 by being doped with ¹⁸Cm ^-3The n type GaN substrate 1 of the oxygen of carrier concentration.

Secondly, as shown in Figure 7, use mocvd method, sequentially growing n-type layer 2, n type covering 3, luminescent layer 4, P type covering 5 and P type contact layer 6 on n type GaN substrate 1.

Specifically, keeping substrate temperature under the state of about 1100 ℃ growth temperature, use by H ₂And N ₂The carrier gas that constitutes, by NH ₃And the unstrpped gas that constitutes of TMGa and by SiH ₄The dopant gas that constitutes, on n type GaN substrate 1, growth have about 100nm thickness, have about 5 * 10 by being doped with ¹⁸Cm ^-3The n type layer 2 that the n type GaN of the Si of doping constitutes., on unstrpped gas, also add TMA1 thereafter, on n type layer 2, the growth have about 400nm thickness, have about 5 * 10 by being doped with ¹⁸Cm ^-3Doping and about 5 * 10 ¹⁸Cm ^-3The n type Al of the Si of carrier concentration _0.05Ga _0.95The n type covering 3 that N constitutes.

Then, as shown in Figure 2, on n type covering 3 (with reference to Fig. 7), the growth have about 5nm thickness, have about 5 * 10 by being doped with ¹⁸Cm ^-3Doping and about 5 * 10 ¹⁸Cm ^-3The n type Al of the Si of carrier concentration _0.1Ga _0.9The n type charge carrier blocking layer 4a that N constitutes.

Secondly, be under the state of about 800 ℃ of growth temperatures keeping substrate temperature, use by H ₂And N ₂The carrier gas that constitutes, by NH ₃And the unstrpped gas that constitutes of TMGa and by SiH ₄The dopant gas that constitutes, on n type current-carrying blocking layer 4a grow doping by having about 5 * 10 ¹⁸Cm ^-3Doping and have about 5 * 10 ¹⁸Cm ^-3The n type photoconductive layer 4b that the n type GaN of the Si of carrier concentration constitutes.

, in unstrpped gas, also add in the TMIn thereafter, by without dopant gas, on n type photoconductive layer 4b by alternately growing by unadulterated In with about 20nm thickness _0.05Ga _0.954 layers of barrier layer 4c that N constitutes and have the unadulterated In of about thickness _0.15Ga _0.853 layers of trap layer 4d that N constitutes form MQW active layer 4e.

And, unstrpped gas is being changed into NH ₃And TMGa the time, use by Cp ₂The dopant gas that Mg constitutes, on MQW active layer 4e, growth have about 100nm thickness, have about 4 * 10 by having mixed ¹⁹Cm ^-3Doping and about 5 * 10 ¹⁷Cm ^-3The P type photoconductive layer 4f that the P type GaN of the Mg of carrier concentration constitutes., on unstrpped gas, also add TMA1 thereafter, on P type photoconductive layer 4f, the growth have about 20nm thickness, have about 4 * 10 by having mixed ¹⁹Cm ^-3Doping and about 5 * 10 ¹⁷Cm ^-3The P type Al of the Mg of carrier concentration _0.1Ga _0.9The P type clearance layer 4g that N constitutes.In view of the above, form the luminescent layer 4 that constitutes by n type charge carrier blocking layer 4a, n type photoconductive layer 4b, MQW active layer 4e, P type photoconductive layer 4f and P type clearance layer 4g.

Secondly, as shown in Figure 7,, use by H keeping substrate temperature to be about under 1100 ℃ the state of growth temperature ₂And N ₂The carrier gas that constitutes, by NH ₃, the unstrpped gas that constitutes of TMGa and TMA1 and by Cp ₂The dopant gas that Mg constitutes, on luminescent layer 4 growth have about 400nm thickness, have about 4 * 10 by having mixed ¹⁹Cm ^-3Doping and about 5 * 10 ¹⁷Cm ^-3The P type Al of the Mg of carrier concentration _0.05Ga _0.95The P type covering 5 that N constitutes.Thereafter, changing unstrpped gas is NH ₃And TMGa, on P type covering 5 growth have about 10nm thickness, have about 4 * 10 by having mixed ¹⁹Cm ^-3Doping and about 5 * 10 ¹⁷Cm ^-3The P type contact layer 6 that the P type GaN of the Mg of carrier concentration constitutes.

At this moment, the propagation of the dislocation by n type GaN substrate 1, form from the back side of n type GaN substrate 1 extend to P type contact layer 6 above the dislocation zone 8 of concentrating.

In nitrogen environment, under about 800 ℃ temperature conditions carry out annealing in process thereafter.

Secondly, as shown in Figure 8, use vacuum vapour deposition, on the presumptive area on the P type contact layer 6, from lower floor to the upper strata, formation by Pt layer with about 5nm thickness, have the Pd layer of about 100nm thickness and have after the P side Ohmic electrode 9 that the Au layer of about 150nm thickness constitutes, on P side Ohmic electrode 9, form Ni layer 25 with about 250nm thickness.At this moment, form P side Ohmic electrode 9 and Ni layer 25, so that become strip (elongate) with about 1.5 μ m width.

Secondly, as shown in Figure 9, use Cl ₂Be the dry ecthing of gas, as mask, etching begins about 300nm thickness part from P type contact layer 6 and above the P type covering 5 with Ni layer 25.In view of the above, form the spine 7 of strip (elongate) 6 that constitute by the protuberance of P type covering 5 and P type contact layer, that extend from predetermined direction.Remove Ni layer 25 thereafter.

Secondly, as shown in figure 10, use plasma CVD method, have the SiN film (not shown) of about 250nm thickness to cover after whole in formation, by removing the SiN film that is positioned at above the P side Ohmic electrode 9, form the dielectric film 10 that constitutes by SiN film with about 250nm thickness.

Secondly, as shown in figure 11, use vacuum vapour deposition, on dielectric film 10 surfaces, from lower floor to the upper strata, formation by Ti layer with about 100nm thickness, have the Pd layer of about 100nm thickness and have the P side liner electrode 11 that the Au layer of about 3 μ m thickness constitutes, with contact above the P side Ohmic electrode 9.Grind the back side of n type GaN substrate 1, so that the thickness of n type GaN substrate 1 become about 100 μ ms thereafter.

Secondly, in the 1st execution mode, with plasma CVD method, SOG (spin-coating glass) method (rubbing method), or the electron beam evaporation plating method, on whole of the back side of n type GaN substrate 1, form SiO with about 250nm thickness ₂Film (not shown).Thereafter, by removing the SiO that is positioned at zone in addition, the concentrated zone of n type GaN substrate 1 back side dislocation 8 ₂Film as shown in figure 12, forms by having about 250nm thickness and the wide SiO of about 40 μ m ₂The dielectric film 12 that film constitutes.In view of the above, cover the zone 8 that 1 back side dislocation of n type GaN substrate is concentrated by dielectric film 12.

Thereafter, as shown in Figure 1, use vacuum vapour deposition, on the back side of n type GaN substrate 1, form n lateral electrode 13, it contacts with the zone in addition, zone 8 that the dislocation of n type GaN substrate 1 back side is concentrated, and simultaneously, covers dielectric film 12.When forming n lateral electrode 13, from forming Al layer near n type GaN substrate 1 back side, one side in order, have about 20nm thickness Pt layer and having the Au layer of about 300nm thickness with about 10nm thickness.At last, from forming P side liner electrode 11 sides of element, form line (not shown) after, by along its line,, form the oxide based semiconductor Laser device of the 1st execution mode according to each spacing element of riving.

(the 2nd execution mode)

With reference to Figure 13, different with above-mentioned the 1st execution mode in the 2nd execution mode, remove n type GaN substrate 1 and each layer of nitride-based semiconductor (2～5) end presumptive area.Therefore, the zone 8 that does not exist the such dislocation of the 1st execution mode shown in Figure 1 to concentrate.In addition, on the back side of n type GaN substrate 1, from beginning to form in order by Al layer near n type GaN substrate 1 back side, one side, having the Pt layer of about 20nm thickness and have the n lateral electrode 33 that the Au layer of about 300nm thickness constitutes, so that contact with the whole face at n type GaN substrate 1 back side with about 10nm thickness.N lateral electrode 33 is examples of " rear side electrode " of the present invention.Other formation of the 2nd execution mode is identical with above-mentioned the 1st execution mode.

Secondly, with reference to Figure 13～Figure 15, the nitride-based semiconductor laser device manufacture process of the 2nd execution mode is described.

At first, use and Fig. 3～same manufacture process of the 1st execution mode shown in Figure 11, form till P side liner electrode 11 after, the back side of grinding n type GaN substrate 1., on the back side of n type GaN substrate 1, by formation have n lateral electrode 33 with above-mentioned 1st execution mode same thickness and composition,, thereby obtain structure shown in Figure 14 so that contact with the whole face at the back side of n type GaN substrate 1 thereafter.

At last, in the 2nd execution mode,, form line 40, so that the zone 8 that the clamping dislocation is concentrated from being formed with P side liner electrode 11 sides of element.Specifically, interelement center line (not shown) beginning from adjacency forms line in about 10 μ m positions.Thereafter, as shown in figure 15, along its line 40 (with reference to Figure 14) by each spacing element of riving, so that extend the zone 8 that the dislocation till the surface, par beyond P type covering 5 protuberances is concentrated from n type GaN substrate 1 back side with same widths.So, form the nitride-based semiconductor laser device of the 2nd execution mode shown in Figure 13.

Manufacture process at the 2nd execution mode, as noted above, by the element of riving by each spacing so that begin to extend the zone 8 that the dislocation till the surface, par beyond P type covering 5 protuberances is concentrated from n type GaN substrate 1 back side to remove with width, thereby can easily suppress to flow through the leakage current that produces because of electric current in the dislocation concentrated area 8.Its result is because it is stable easily to make element decide the output of current drives time, so can easily make the nitride-based semiconductor laser device of working stability.

Can easily be suppressed at the light that absorbs in the dislocation concentrated area 8 at the light that luminescent layer 4 produces.In view of the above, because can easily suppress luminous again with any wavelength, so can suppress colorimetric purity variation because of so luminous generation again by the light of dislocation concentrated area 8 absorptions.

(the 3rd execution mode)

With reference to Figure 16 and Figure 17, different with above-mentioned the 1st execution mode in the 3rd execution mode, illustrate that the present invention is applicable to the example of light-emitting diode situation.

That is: in the 3rd execution mode, as shown in figure 16, on n type GaN substrate 1, form the n type covering 52 that the n type GaN that has the Si of about 5 μ m thickness by having mixed constitutes.N type covering 52 is examples of " semiconductor element layer " of the present invention.

On n type covering 52, form luminescent layer 53.This luminescent layer 53, as shown in figure 17, by lamination alternately by having 6 layers of barrier layer 53a that the plain GaN of about 5nm thickness constitutes and having about 5nm thickness In that undopes _0.35Ga _0.65The MQW active layer 53c of 5 layers of trap layer 53b that N constitutes and constitute by having about 10nm thickness protective layer 53d that GaN constitutes that undopes.Luminescent layer 53 is examples of " semiconductor element layer " of the present invention.

And, as shown in figure 16, on luminescent layer 53, form the P type Al that has the Mg of 0.15 μ m thickness by having mixed _0.05Ga _0.95The P type covering 54 that N constitutes.On P type covering 54, form the P type intermediate layer 55 that the P type GaN that has the Mg of about 0.3 μ m thickness by having mixed constitutes.P type covering 54 and P type contact layer 55 are examples of " semiconductor bulk element layer " of the present invention.

And near n type GaN substrate 1 and each layer of nitride-based semiconductor (52～55) end, formation extends to the zone 56 that the dislocation above the P type contact layer 55 is concentrated from n type GaN substrate 1 back side.

Here, in the light-emitting diode of the 3rd execution mode, on the zone 56 that dislocation is concentrated on the P type contact layer 55, form by SiO with about 250nm thickness and about 40 μ m width ₂The dielectric film 57 that film constitutes.On P type contact layer 55, form P side Ohmic electrode 58, contact with exterior domain with dislocation concentrated area above the P type contact layer 55 56, and cover dielectric film 57.This P side Ohmic electrode 58, is made of the Pt layer with about 5nm thickness, the Au layer that has the Pd layer of about 100nm thickness and have about 150nm thickness to the upper strata from lower floor.P side Ohmic electrode 58 is examples of " face side electrode " of the present invention.And, on P side Ohmic electrode 58, form by Ti layer, have the Pd layer of about 100nm thickness and have the P side liner electrode 59 that the Au layer of about 3 μ m thickness constitutes to the upper strata with about 100nm thickness from lower floor.

In the 3rd execution mode, at the back side of n type GaN substrate 1, form n side ohm transparency electrode 60, so that contact with exterior domain with the dislocation concentrated area, the back side 56 of n type GaN substrate 1.This n side ohm transparency electrode 60 is from being made of the Al layer with about 5nm thickness, the Au layer that has the Pt layer of about 15nm thickness and have about 40nm thickness in order near n type GaN substrate 1 back side, one side.In addition, the distance W between n side ohm transparency electrode 60 end faces and the element end face is about 40 μ m.N side transparency electrode 60 is examples of " rear side electrode " of the present invention.And, presumptive area on n side ohm transparency electrode 60 back sides, from a side, form by Ti layer in order, have the Pd layer of about 100nm thickness and have the n side liner electrode 61 that the Au layer of about 3 μ m thickness constitutes with about 100nm thickness near n side ohm transparency electrode 60 back sides.

In the 3rd execution mode, as noted above, on the zone that the dislocation on the P type contact layer 55 is concentrated, when forming dielectric film 57, by forming P side Ohmic electrode 58 so that contact with exterior domain with dislocation concentrated area 56 above the P type contact layer 55, because dislocation concentrated area 56 is capped not expose from dielectric film 57, so can easily suppress to flow through the leakage current that produces because of dislocation concentrated area 56 electric currents above the P type contact layer 55 above the P type contact layer 55.In addition, on n type GaN substrate 1 back side, the zone of concentrating by forming n side ohm transparency electrode 60 so that with the back side dislocation of n type GaN substrate 1 56 contacts with exterior domain, can suppress to flow through the electric leakage that produces because of dislocation concentrated area, the back side electric current of n type GaN substrate 1.Its result, because the light output stabilization can easily make element decide current drives the time, so can easily make the semiconductor element working stabilityization.In addition, because can reduce the electric current that flows through of dislocation concentrated area 56, so can reduce unnecessary luminous from dislocation concentrated area 56.

In the 3rd embodiment, do into about 40 μ m by making between n side ohm transparency electrode 60 end faces and the element end face distance W, during the welding scolder, can suppress scolder and flow to element end face (side) on the n side liner electrode 61 that on n side Ohmic electrode 60, forms.In view of the above, generation that can the bad short circuit of suppression element.

Secondly, with reference to Figure 16～Figure 21, the manufacture process of the light-emitting diode of the 3rd execution mode is described.

At first, as shown in figure 18, use mocvd method, order growing n-type covering 52, luminescent layer 53, P type covering 54 and P type contact layer 55 on n type GaN substrate.

Specifically, keeping substrate temperature to be about under the state of 1000 ℃～1200 ℃ (for example about 1150 ℃) growth temperatures, use H ₂And N ₂Carrier gas (the H that constitutes ₂About 50%), containing ratio: by NH ₃And the unstrpped gas that constitutes of TMGa and by SiH ₄The dopant gas that constitutes on n type GaN substrate 1, has the n type covering 52 that the n type GaN of the Si of about 5 μ m thickness constitutes with the growth of about 3 μ m/h by having mixed.

Secondly, as shown in figure 17, make substrate temperature be maintained at about 700 ℃～about 1000 ℃ and (for example, about 850 ℃ under the state of) growth temperature, use by H ₂And N ₂Carrier gas (the H that constitutes ₂Containing ratio: about 1%～about 5%) with by NH ₃, the unstrpped gas that constitutes of TEGa and TMIn, on n type covering 52 (with reference to Figure 18), the 6 layers of barrier layer 53a that constitutes by unadulterated GaN by alternately growing and by not doping In with about 5nm thickness with about 5nm thickness with the speed of growth of about 0.4nm/s _0.35Ga _0.655 layers of trap layer 53b that N constitutes form MQW active layer 53C.Then, the protective layer 53d that constitutes by unadulterated GaN with about 0.4nm/s growth with about 10nm thickness.In view of the above, form the luminescent layer 53 that constitutes by MQW active layer 53C and protective layer 53d.

Secondly, as shown in figure 18, make substrate temperature be maintained at about 1000 ℃～about 1200 ℃ and (for example, about 1150 ℃ under) the growth temperature state, use by H ₂And N ₂Carrier gas (the H that constitutes ₂About 1%～about 3%), containing ratio: by NH ₃, the unstrpped gas that constitutes of TMGa and TMA1 and by Cp ₂The dopant gas that Mg constitutes has the P type Al of the Mg of 0.15 μ m thickness by having mixed in the growth of about 3 μ m/h on luminescent layer 53 _0.05Ga _0.95The P type covering 54 that N constitutes.Then, unstrpped gas is changed into NH ₃And TMGa, on P type covering 54, have the P type contact layer 55 that the P type GaN of the Mg of 0.3 μ m thickness constitutes by having mixed with the growth of about 3 μ m/h.

At this moment, by the propagation of n type GaN substrate 1 dislocation, formation extends to the zone 56 that the dislocation above the P type contact layer 55 is concentrated from n type GaN substrate 1 back side.In addition, by reducing by H ₂And N ₂The H of the carrier gas that constitutes ₂Amount can not carry out annealing in process in nitrogen environment, make the activate of Mg dopant.

Secondly, in the 3rd execution mode, use plasma CVD method, SOG method (rubbing method) or electron beam evaporation plating method form the SiO with about 250nm thickness on whole of P type contact layer 55 ₂Film (not shown).Thereafter, by removing the SiO in the zone beyond the zone 56 that the dislocation that is positioned on the p type contact layer 55 concentrates ₂Film as shown in figure 19, forms the dielectric film 57 with about 250nm thickness and about 40 μ m width.In view of the above, cover dislocation concentrated area 56 above the P type contact layer 55 by dielectric film 57.

Secondly, as shown in figure 20, use vacuum vapour deposition, on P type contact layer 55, form P side Ohmic electrode 58, contact with exterior domain with dislocation concentrated area 56 above the P type contact layer 55, and covering dielectric film 57.When forming P side Ohmic electrode 58, form Pt layer, have the Pd layer of about 100nm thickness and have the Au layer of about 150nm thickness to the upper strata with about 5nm thickness from lower floor.Secondly, use vacuum vapour deposition, on P side Ohmic electrode 58, from lower floor to the upper strata, formation by Ti layer with about 100nm thickness, have the Pd layer of about 100nm thickness and have the P side liner electrode 59 that the Au layer of about 3 μ m thickness constitutes.Thereafter, grind the back side of n type GaN substrate 1, the thickness that makes n type GaN substrate 1 is about 100 μ m.

Secondly, in the 3rd execution mode, use vacuum vapour deposition, on whole of n type GaN substrate 1 back side, from near n type GaN substrate 1 back side, one side, form by Al layer in order, have the Pt layer of about 15nm thickness and have the metal level (not shown) that the Au layer of about 40nm thickness constitutes with about 5nm thickness., by remove be positioned at n type GaN substrate 1 back side on dislocation concentrated area 56 metal level with exterior domain, as shown in figure 21, form n side ohm transparency electrode 60 thereafter.At this moment, remove metal level, make that distance becomes about 40 μ m between the end face of n side ohm transparency electrode 60 and the element end face.

Thereafter, as shown in figure 16, use vacuum vapour deposition, presumptive area on n side ohm transparency electrode 60 back sides, from the back side one side, form the n side liner electrode 61 that the Au layer by the Ti layer with about 100nm thickness, the Pd layer with about 100nm thickness and about 3 μ m thickness constitutes in order near n side ohm transparency electrode 60.At last, begin to form line (not shown) afterwards from P side liner electrode 59 sides that form element, by along its line with each spacing element of riving, form the light-emitting diode of the 3rd execution mode.

(the 4th execution mode)

With reference to Figure 22, in the 4th execution mode, different with above-mentioned the 1st execution mode on the surface of the par beyond the protuberance of P type covering 5, form the n type Al that has the Ge of 0.4 μ m thickness by having mixed _0.12Ga _0.88The n type current blockade layer 80 that N constitutes.

And in the 4th execution mode, near the end of n type GaN substrate 1 and each layer of nitride-based semiconductor (2～5,80), formation extends to the dislocation concentrated area 8 above the n type current blockade layer 80 from n type GaN substrate 1 back side.In addition, on n type current blockade layer 80, form by Pt layer, have the Pd layer of about 100nm thickness and have the P side Ohmic electrode 79 that the Au layer of about 150nm thickness constitutes to the upper strata from lower floor with about 5nm thickness, so as with contact above the P type contact layer 6 of formation spine 7.In addition, on P side Ohmic electrode 79, to the upper strata, form by Ti layer, have the Pd layer of about 100nm thickness and have the P side liner electrode 81 that the Au layer of about 3 μ m thickness constitutes with about 100nm thickness from lower floor.N type current blockade layer 80 is examples of " semiconductor element layer " of the present invention, and P side Ohmic electrode 79 is examples of " face side electrode " of the present invention.

Here, same with above-mentioned the 1st execution mode in the 4th execution mode, form the dielectric film 12 that constitutes by SiN film, with the dislocation concentrated area 8 on the back side that covers n type GaN substrate 1 with about 250nm thickness and about 40 μ m width.In addition, on the back side of n type GaN substrate 1, form n lateral electrode 13, contact with exterior domain with the dislocation concentrated area 8 at the back side of n type GaN substrate 1, and cover dielectric film 12.

Other of the 4th execution mode constitutes with above-mentioned the 1st execution mode same.

In the 4th execution mode, as noted above, as the current blockade layer, even be formed with by n type Al _0.12Ga _0.88In the nitride-based semiconductor laser device of the n type current blockade layer 80 that N constitutes, also can obtain and the same effect of above-mentioned the 1st execution mode.That is: on the zone 8 that the dislocation on n type GaN substrate 1 back side is concentrated, by when forming dielectric film 12, form n lateral electrode 13 so that contact with the zone in addition, dislocation concentrated area 8 at n type GaN substrate 1 back side, because being capped, the zone that the dislocation of n type GaN substrate 1 back side is concentrated do not expose, so can easily suppress to flow through the leakage current that produces because of the dislocation concentrated area electric current at n type GaN substrate 1 back side from dielectric film 12.Its result, because the light output stabilization can easily make element decide current drives the time, so can easily make the semiconductor element working stabilityization., in the 4th execution mode, because the dislocation concentrated area 8 above the n type current blockade layer 80 contacts with P side Ohmic electrode 79, so more be easy to generate electric leakage than above-mentioned the 1st execution mode.

Secondly, with reference to Figure 22～Figure 26, the manufacture process of the nitride-based semiconductor laser device of the 4th execution mode is described.

At first, use and Fig. 3～same manufacture process of the 1st execution mode shown in Figure 7,, in nitrogen environment, carry out annealing in process forming after P type contact layer 6.Secondly, as shown in figure 23, use plasma CVD method, the presumptive area on P type contact layer 6 forms to be had after the SiN layer 91 of about 200nm thickness, forms the Ni layer 92 with about 250nm thickness on SiN layer 91.At this moment, form SiN layer 91 and Ni layer 92, make it become strip (elongate) with about 1.5 μ m width.

Secondly, as shown in figure 24, use Cl ₂Be the dry ecthing of gas, with Ni layer 92 as mask, the about 300nm thickness of beginning etching above P type contact layer 6 and P type covering 5.In view of the above, form the spine 7 of strip (elongate) 6 that constitute by the protuberance of P type covering 5 and P type contact layer, that extend to predetermined direction.Remove Ni layer 92 thereafter.

Secondly, as shown in figure 25, use mocvd method, as selecting growth mask, on the surface, par beyond the protuberance of P type covering 5, form the n type Al that has the Ge of about 0.4 μ m thickness by having mixed with SiN layer 91 _0.12Ga _0.88The n type current blockade layer 80 that N constitutes.At this moment, because the propagation of the dislocation on tabular surface surface beyond P type covering 5 protuberances, so formation extends to the zone 8 that the dislocation above the n type current blockade layer 80 is concentrated from n type GaN substrate 1 back side.Remove SiN layer 91 thereafter.

Secondly, as shown in figure 26, use vacuum vapour deposition, on n type current blockade 80, form by Pt layer, have the Pd layer of about 100nm thickness and have the P side Ohmic electrode 79 that the Au layer of about 150nm thickness constitutes to the upper strata from lower floor with about 5nm thickness, so as with contact above the P type contact layer 6 of formation spine 7.On P side Ohmic electrode 79, from lower floor to upper strata form by Ti layer with about 100nm thickness, have the Pd layer of about 100nm thickness and have P side liner electrode 81 that the Au layer of about 3 μ m thickness constitute thereafter., grind the back side of n type GaN substrate 1, make the thickness of n type GaN substrate 1 become about 100m thereafter.

Secondly, use the manufacture process same, as shown in figure 22, form dielectric film 12, to cover the concentrated zone 8 of dislocation at n type GaN substrate 1 back side with the 1st execution mode shown in Figure 12., use vacuum vapour deposition,, form n lateral electrode 13,, and cover dielectric film 12 so that contact with zone in addition, dislocation concentrated area, n type GaN substrate 1 back side 8 at the back side of n type GaN substrate 1 thereafter.At last, begin to form line (not shown) afterwards from the P side liner electrode 81 that forms element, by along this line with each element of riving at interval, form the nitride-based semiconductor laser device of the 4th execution mode.

(the 5th execution mode)

With reference to Figure 27, different with above-mentioned the 3rd execution mode in the 5th execution mode, on the zone 56 that the dislocation on the back side of n type GaN substrate 1 is concentrated, form by SiO with about 250nm thickness and about 40 μ m width ₂The dielectric film 100 that film constitutes.

In addition, in the 5th execution mode, on the back side of n type GaN substrate 1, form the n side ohm transparency electrode 110 that has with above-mentioned the 3rd execution mode same thickness and composition, it is contacted with the zone in addition, dislocation concentrated area, the back side 56 of n type GaN substrate 1, and cover dielectric film 100.This n side ohm transparency electrode 110 is near n type GaN substrate 1 back side, one side, is made of the Al layer with about 5nm thickness, the Au layer that has the Pt layer of about 15nm thickness and have about 40nm thickness in order.On the presumptive area on n side ohm transparency electrode 110 back sides, from near n side ohm transparency electrode 110 back sides, one side, form by the Ti layer of the about 100nm thickness of tool in order, have the Pd layer of about 100nm thickness and have the n side liner electrode 111 that the Au layer of about 3 μ m thickness constitutes.N side ohm transparency electrode 110 is examples of " rear side electrode " of the present invention.Other formation of the 5th execution mode is same with above-mentioned the 3rd execution mode.

In the 5th execution mode, as noted above, the zone 56 that dislocation on n type GaN substrate 1 back side is concentrated, when forming dielectric film 100, by forming n side ohm transparency electrode 110 to contact with the zone in addition, dislocation concentrated area 56 at n type GaN substrate 1 back side, because being capped, the zone 56 that the dislocation of n type GaN substrate 1 back side is concentrated do not expose, so can easily suppress to flow through the leakage current that produces because of electric current on the dislocation concentrated area 56 at n type GaN substrate 1 back side from dielectric film 100.Same with above-mentioned the 3rd execution mode, because being capped, the concentrated area 56 that misplaces above the P type contact layer 55 do not expose, so can easily suppress to flow through the leakage current that produces because of electric current on the dislocation concentrated area 56 above the P type contact layer 55 from dielectric film 57.Its result, because the light output stabilization can make element decide current drives more easily the time, so can make the semiconductor element working stabilityization more easily.In addition, flow through electric current in the concentrated area 56, so can reduce unnecessary luminous from dislocation concentrated area 56 because can be reduced in dislocation.

Secondly, with reference to Figure 27 and Figure 28, the light-emitting diode manufacture process of the 5th execution mode is described.

At first, use and Figure 18～same manufacture process of the 3rd execution mode shown in Figure 20, form after P side liner electrode 59, grind the back side of n type GaN substrate 1.Secondly, in the 5th execution mode, use plasma CVD method, SOG method (rubbing method), perhaps the electron beam evaporation plating method on whole of n type GaN substrate 1 back side, forms the SiO with about 250nm thickness ₂Film (not shown).Thereafter, by removing the dislocation concentrated area 56 that is positioned on n type GaN substrate 1 back side SiO with exterior domain ₂Film as shown in figure 28, forms by the SiO with about 250 μ m thickness and about 40m width ₂The dielectric film 100 that film constitutes.In view of the above, cover the dislocation concentrated area 56 at n type GaN substrate 1 back side by dielectric film 100.Secondly, use vacuum vapour deposition, on n type GaN substrate 1 back side, form n side ohm transparency electrode 110, it is contacted with exterior domain with the dislocation concentrated area 56 at n type GaN substrate 1 back side, and covering dielectric film 100.When forming n side ohm transparency electrode 110, from the Au layer that forms the Al layer with about 5nm thickness, Pt layer in order and have about 40nm thickness near n type GaN substrate 1 back side, one side with about 15nm thickness.

Thereafter, as shown in figure 27, use vacuum vapour deposition, presumptive area on n side ohm transparency electrode 110 back sides, from near n side ohm transparency electrode 110 back sides, one side, form by Ti layer in order, have the Pd layer of about 100nm thickness and have the n side liner layer 111 that the Au layer of about 3 μ m thickness constitutes with about 100nm thickness.At last, begin to form line (not shown) afterwards, by along its line,, form the light-emitting diode of the 5th execution mode with each spacing each element of riving from a side that is formed with element P side liner electrode 59.

(the 6th execution mode)

With reference to Figure 29, different with above-mentioned the 1st execution mode in the 6th execution mode, the ion implanted layer 120 that the surface, par that has beyond the protuberance of P type covering 5 arrives the degree of depth the n type covering 3 is set on dislocation concentrated area 8.Form because this ion implanted layer 120 injects carbon impurity such as (C) by ion, become high resistance area so be provided with the zone of ion implanted layer 120.Ion implanted layer 120 is examples of " high resistance area " of the present invention.Other of the 6th execution mode constitutes and above-mentioned the 1st execution mode is same.

In the 6th execution mode, as noted above, by the ion implanted layer 120 that the surface, par that has beyond the protuberance of P type covering 5 arrives the degree of depth the n type covering 3 is set on dislocation concentrated area 8, because dislocation concentrated area 8, surface, the par beyond the protuberance of P type covering 5 is owing to electric current in the ion implanted layer 120 is difficult to flow through, so can suppress to flow through the leakage current that produces because of electric current in the dislocation concentrated area 8 on the surface, par beyond P type covering 5 protuberances.Its result because can easily make element decide the output stabilization of current drives time, can easily make the semiconductor element working stabilityization.

Other effect of the 6th execution mode and above-mentioned the 1st execution mode are same.

Secondly, manufacture process as the nitride-based semiconductor laser device of the 6th execution mode, after the manufacture process of the 1st execution mode shown in Figure 9, before forming dielectric film 10, on the dislocation concentrated area 8 on the surface, par beyond P type covering 5 protuberances, inject carbon (C) with about 150keV ion.In view of the above, form have beyond the P type covering 5d protuberance ion the through n type covering 3 in surface, d par inject the degree of depth (thickness), at the plasma implanted layer 120 of dislocation concentrated area 8 configurations.As ion implanting conditions, preferred dose is about 1 * 10 ¹⁴Cm ^-2More than.

(the 7th execution mode)

With reference to Figure 30, in the 7th execution mode, in the structure (with reference to Figure 22) of above-mentioned the 4th execution mode, have above n type current blockade layer 80 through n type covering 3 above the recess 130 of the degree of depth, be arranged on than on the dislocation zone (beginning about 50 μ m～about 100 mu m ranges) more in the inner part, concentrated area 8 from the both ends of element.In addition, on than recess 130 zone more in the inner part on the n type current blockade layer 80, form by Pt layer, have the Pd layer of about 100nm thickness and have the P side Ohmic electrode 149 that the Au layer of about 150nm thickness constitutes to the upper strata from lower floor, make it and contact above the P type contact layer 6 with about 5nm thickness.In addition, on P side Ohmic electrode 149, to the upper strata, form by Ti layer, have the Pd layer of about 100nm thickness and have the P side liner electrode 151 that the Au layer of about 3 μ m thickness constitutes with about 100nm thickness from lower floor.P side Ohmic electrode 149 is examples of " face side electrode " of the present invention.Other of the 7th execution mode constitutes and above-mentioned the 4th execution mode is same.

At the 7th execution mode, as noted above, has the recess 130 that above n type current blockade layer 80, arrives the degree of depth above the n type covering 3 than concentrated zone 8 zone (beginning about 50 μ m～about 100 mu m ranges from the both ends) setting more in the inner part that misplaces, simultaneously, on than recess 130 zone more in the inner part on the n type current blockade layer 80, by form P side Ohmic electrode 149 with contact above the P type contact layer 6, can suppress to flow through the leakage current that produces because of electric currents in the dislocation concentrated area above the n type current blockade layer 80 8.Its result is because can make element decide the electric current light output stabilization in when output, so can make the semiconductor element working stabilityization.Because by recess 130 can splitting ratio luminescent layer 4, the zone and the concentrated area 8 more in the inner part, dislocation concentrated area 8 of P type covering 5 and n type current blockade layer 80, so the light that more in the inner part luminescent layer 4 produces in the zone 8 of concentrating than dislocation can suppress the light that absorbed by the concentrated area 8 that misplaced.In view of the above, because it is luminous again under any wavelength to be suppressed at the light of dislocation concentrated area 8 absorptions, can suppress because of so luminous again colorimetric purity variation.

Other effect of the 7th execution mode is identical with above-mentioned the 1st execution mode.

Secondly, manufacture process as the nitride-based semiconductor laser device of the 7th execution mode, in the manufacture process of the 4th execution mode shown in Figure 25, after having formed n type current blockade layer 80, with RIE (Reactive Ion Etching: method reactive ion etching), than dislocation zone more in the inner part, concentrated area 8, form recess 130 with degree of depth above the through n type covering 3 above n type current blockade layer 80.And, use vacuum vapour deposition, comprising on whole of recess 130 inner faces, form the metal level (not shown) that constitutes P side Ohmic electrode 149 and P side liner electrode 151.Remove the metal level that n type current blockade layer 80 on misplace concentrated area 8 and be positioned at recess 130 inner faces thereafter.In view of the above, on than recess 130 zone more in the inner part on the n type current blockade layer 80, form P side Ohmic electrode 149 with contact above the P type contact layer 6, simultaneously, on P side Ohmic electrode 149, form P side liner electrode 151.

With reference to Figure 31, in the nitride-based semiconductor laser device of the 7th execution mode the 1st variation, the degree of depth of the recess 160 that is provided with on the zone more in the inner part, concentrated area 8 than dislocation is for to reach the n type covering 3 above n type current blockade layer 80.Even constitute in this wise, also can obtain and above-mentioned the 7th execution mode effect same.

With reference to Figure 32, in the nitride-based semiconductor laser device of the 2nd variation of the 7th execution mode, form dielectric film 170, zone 8 and the recess 130 concentrated with the dislocation of imbedding above the n type current blockade layer 80.In addition, on whole on n type current blockade layer 80, dielectric film 170 and the P type contact layer 6, form by Pt layer, have the Pd layer of the about 100nm of thickness and have the P side Ohmic electrode 179 that the Au layer of about 150nm thickness constitutes to the upper strata with about 5nm thickness from lower floor.In addition, on P side Ohmic electrode 179, to the upper strata, form by Ti layer, have the Pd layer of about 100nm thickness and have the P side liner electrode 181 that the Au layer of about 3 μ m thickness constitutes with about 100nm thickness from lower floor.Even constitute in this wise, also can obtain and above-mentioned the 7th execution mode effect same.

(the 8th execution mode)

With reference to Figure 33, in the 8th execution mode, in the structure (with reference to Figure 22) of above-mentioned the 4th execution mode, setting has the ion implanted layer 190 that begins about 0.2 μ m degree of depth above n type current blockade layer 80 on the zone 8 that dislocation is concentrated.Form because this ion implanted layer 190 injects carbon impurity such as (C) by ion, become high resistance area so be provided with the zone of ion implanted layer 190.Ion implanted layer 190 is examples of " high resistance area " of the present invention.Other formation of the 8th execution mode is same with above-mentioned the 4th execution mode.

In the 8th execution mode, as noted above, has the ion implanted layer 190 that above n type current blockade layer 80, begins about 0.o2 μ m degree of depth by on dislocation concentrated area 8, being provided with, because dislocation concentrated area 8 electric currents are difficult to flow through from ion implanted layer 190 on n type current blockade layer 80, so can suppress to flow through the leakage current that produces because of dislocation concentrated area 8 electric currents above the n type current blockade layer 80.Its result, because the light output stabilization can easily make element decide current drives the time, so can easily make the semiconductor element working stabilityization.

Other effect of the 8th execution mode and above-mentioned the 1st execution mode are same.

Secondly, manufacture process as the nitride-based semiconductor laser device of the 8th execution mode, in the manufacture process of above-mentioned the 4th execution mode, in the operation (with reference to Figure 26) that forms P side Ohmic electrode 79 before, the ion of the zone 8 usefulness 40keV that dislocation is concentrated on n type current blockade layer 80 injects carbon (C).In view of the above, as shown in figure 33, formation has the ion that begins about 0.2 μ m above n type current blockade layer 80 and injects ion implanted layer 190 degree of depth (thickness), that dispose in dislocation concentrated area 8.Preferably get dosage about 1 * 10 as injection condition ¹⁴Cm ^-2More than.

(the 9th execution mode)

In the 9th execution mode, different with above-mentioned the 1st～the 8th execution mode, to being illustrated with the situation of the nitride-based semiconductor layer that contains the sapphire substrate as the substrate of nitride-based semiconductor laser device.

That is,, as shown in figure 34, on sapphire substrate 201, form AlGaN layer 201b with about 20nm thickness at the 9th execution mode.On AlGaN layer 201b, form GaN layer 201c with about 1 μ m thickness.On the whole zone of this GaN layer 201c, form the dislocation of propagating to longitudinal direction.And the presumptive area on GaN layer 201c forms by SiN with about 200nm thickness or SiO ₂The mask layer 201d that constitutes.This mask layer 201d brings into play function as the selection growth mask in manufacture process described later.In addition, on GaN layer 201c, form unadulterated GaN layer 201e, with coverage mask layer 201d with about 5 μ m thickness.And the substrate 201 of the nitride-based semiconductor laser device of the 9th execution mode constitutes by sapphire substrate 201a, AlGaN layer 201b, GaN layer 201c, mask layer 201d and GaN layer 201e.The GaN layer 201e of substrate 201 is examples of " nitride-based semiconductor substrate " of the present invention.

On substrate 201, form have about 100nm thickness, have about 5 * 10 by having mixed ¹⁸Cm ^-3The n type layer 202 that the n type GaN of the Si of doping constitutes.On n type layer 202, form have about 400nm thickness, have about 5 * 10 by having mixed ¹⁸Cm ^-3The n type Al of the Si of carrier concentration _0.05Ga _0.95The n type covering 203 that N constitutes.On n type covering 203, form the luminescent layer 4 same luminescent layers 204 that constitute that have with the 1st execution mode shown in Figure 2.N type layer 202, n type covering 203 and luminescent layer 204 are examples of " semiconductor element layer " of the present invention.

On luminescent layer 204, form have protuberance, have about 4 * 10 by having mixed ¹⁹Cm ^-3Doping and about 5 * 10 ¹⁷Cm ^-3The P side Al of the Mg of carrier concentration _0.05Ga _0.95The P type covering 205 that N constitutes.The protuberance of this P type covering 205 has about 1.5 μ m width and about 300nm height.In addition, the par beyond the protuberance of P type covering 205 has the thickness of about 100nm.And, on the protuberance of P type covering 205, form have about 10nm thickness, have about 4 * 10 by having mixed ¹⁹Cm ^-3Doping and about 5 * 10 ¹⁷Cm ^-3The P type contact layer 206 that the P type GaN of the Mg of carrier concentration constitutes.And, by the protuberance and the P type contact layer 206 of P type covering 205, constitute the spine 207 of the strip (elongate) that extends to predetermined direction.P type covering 205 and P type contact layer 206 are examples of " semiconductor element layer " of the present invention.

By removing par beyond the protuberance from P type 205, n type covering 202 surperficial parts are exposed up to the presumptive area of n type 202.And near the GaN layer 201e and each layer of nitride-based semiconductor (202～205) square end portion that constitute substrate 201, form from the dislocation concentrated area 208 on surface, par beyond P type covering 205 protuberances, AlGaN layer 201b side interface of GaN layer 201c.In addition, near the GaN layer 201e and n type layer 202 the other end that constitute substrate 201, also form the dislocation concentrated area 208 of extending up to the surface that n type layer 202 exposes at AlGaN layer 201b side interface from GaN layer 201c.

And, constituting on the P type contact layer 206 of spine 207,, form by Pt layer, have the Pd layer of about 100nm thickness and have the P side Ohmic electrode 209 that the Au layer of about 150nm thickness constitutes to the upper strata from lower floor with about 5nm thickness.P side Ohmic electrode 209 is examples of " face side electrode " of the present invention.

, in the 9th execution mode, form the dielectric film 201 that constitutes by SiN film here, so that the presumptive area beyond the dislocation concentrated area, the surface of exposing with n type layer 202 above the P side Ohmic electrode 209 208 is exposed with about 250nm thickness.That is: cover the surface of P sides and n side dislocation concentrated area 208 by dielectric film 210.

And, be positioned on the surface of the P type covering 205 protuberances lip-deep dielectric film 201 in par in addition, from lower floor to the upper strata, formation by Ti layer with about 100nm thickness, have the Pd layer of about 100nm thickness and have the P side liner electrode 211 that the Au layer of about 3 μ m thickness constitutes, with contact above the P side Ohmic electrode 209.

In the 9th execution mode, form n lateral electrode 212, contact with the zone beyond the dislocation concentrated area 208 on the surface of exposing with n type layer 202.This n lateral electrode 212 is made of the Al layer with about 10nm thickness, the Au layer that has the Pt layer of about 20nm thickness and have about 300nm thickness to the upper strata from lower floor.N lateral electrode 212 is examples of " face side electrode " of the present invention.

In the 9th embodiment, as noted above, forming dielectric film 210 so that when the presumptive area beyond the dislocation concentrated area, surface 208 that the quilt of n type layer 202 exposes exposes, by forming n lateral electrode 212, so that contact with the zone in addition, dislocation concentrated area, surface 208 that n type layer 202 is exposed, because dislocation concentrated area 208, the surface that n type layer 202 is exposed is capped not exposing from dielectric film 210, flow through the leakage current that produces so can easily suppress dislocation concentrated area 208 electric currents on the surface of exposing because of n type layer 202.Its result is because can easily make the light output stabilization of element when deciding current drives, so can make the semiconductor element working stabilityization.In addition, can suppress to flow through the unnecessary luminous of generation because of dislocation concentrated area 208 electric currents.

Secondly, with reference to Figure 34～Figure 38, the manufacture process of the nitride-based semiconductor laser device of the 9th execution mode is described.

At first, with reference to Figure 35, the forming process of substrate 201 is described.Specifically, as shown in figure 35, use mocvd method, keep substrate temperature under 600 ℃ state, growth has the AlGaN layer 201b of about 20nm thickness on sapphire substrate 201a.Thereafter, changing substrate temperature is about 1100 ℃, and growth has the GaN layer 201c of about 1 μ m thickness on AlGaN layer 201b.At this moment, in the whole zone of GaN layer 201c, form the dislocation that longitudinal direction is propagated.Secondly, use plasma CVD method, on GaN layer 201c, separate predetermined space, form by SiN with about 200nm thickness or SiO ₂Constitute mask layer 201d.

Secondly, use the HVPE method, keep substrate temperature under about 1100 ℃ state, as selecting growth mask, have the unadulterated GaN layer 201e of about 5 μ m thickness to growth at GaN layer 201c upper cross-square with mask layer 201d.At this moment, GaN layer 201e selectively after the longitudinal direction growth, little by little do not grow at transverse direction on forming the GaN layer 201c of mask layer 201d.Therefore, be positioned on the GaN layer 201e on the GaN layer 201c that does not form mask layer 201d, form the dislocation concentrated area 208 that longitudinal direction is propagated.It because pass through transverse direction growing GaN layer 201e on the GaN layer 201e that is positioned on the mask 201d, misplaces to the transverse direction bending on the other hand, so be difficult to form the dislocation that longitudinal direction is propagated.And, constitute substrate 201 by sapphire substrate 201a, AlGaN layer 201b, GaN layer 201c, mask layer 201d and GaN layer 201e.

Secondly, as shown in figure 36, use mocvd method, order growing n-type layer 202, n type covering 203, luminescent layer 204, P type covering 205 and P type contact layer 206 on substrate 201.And, form the P side Ohmic electrode 209 of strip (elongate) in the presumptive area of P type contact layer 206.Thereafter, by from P type contact layer 206 and beginning etching about 300nm thickness part above the P type covering 205, form 206 that constitute by P type covering 205 protuberances and P type contact layer, to the spine 207 of the strip (elongate) of predetermined direction extension.

Secondly, as shown in figure 37, begin to etch into presumptive area till the n type layer 202, the part on n type layer 202 surface is exposed by the surface, par beyond the protuberance of P type covering 205.

Secondly, use plasma CVD method, form SiN film (not shown), to cover whole with about 250nm thickness.By remove the SiN film that be positioned at P side Ohmic electrode 209 on and be positioned at the SiN film of the presumptive area dislocation concentrated area 208 on surface that n type layer 202 expose beyond, as shown in figure 38, form dielectric film 210 thereafter.

Secondly, as shown in figure 34, use vacuum vapour deposition, on lip-deep dielectric film 201 surfaces, par beyond the protuberance that is positioned at P type covering 205, formation P side liner electrode 211, so as with contact above the P side Ohmic electrode 209.Thereafter, in the 9th execution mode, the presumptive area on the dielectric film 210 that is positioned on n type layer 202 exposing surface forms n lateral electrode 212, so that the dislocation concentrated area on the surface of exposing with n type layer 202 208 contacts with exterior domain.At last, begin to form line (not shown) afterwards from a side of the P side liner electrode 211 that is formed with element, by along this line with each spacing element of riving, form the nitride-based semiconductor laser device of the 9th execution mode.

(the 10th execution mode)

With reference to Figure 39, in the 10th execution mode, different with above-mentioned the 1st～the 9th execution mode, when using n type GaN substrate, illustrate to make n type covering dislocation concentrated area thickness misplace the concentrated area with the also little situation of the thickness of exterior domain than n type covering as substrate.

In the nitride-based semiconductor laser device of the 10th execution mode, as shown in figure 39, have about 100 μ m thickness, having mixed has about 5 * 10 ¹⁸Cm ^-3On the n type GaN substrate 221 of the oxygen of carrier concentration, form have about 100nm thickness, have about 5 * 10 by having mixed ¹⁸Cm ^-3The n type layer 222 that the n type GaN of the Si of doping constitutes.N type GaN substrate 221 has the buergerite structure, and has the surface of (0001) face.On n type layer 222, form have about 400nm thickness, have about 5 * 10 by having mixed ¹⁸Cm ^-2Doping and about 5 * 10 ¹⁸Cm ^-3The n type Al of the Si of carrier concentration _0.05Ga _0.95The n type covering 223 that N constitutes.In addition, near n type GaN substrate 221, n type layer 222 and n type covering 223 ends, with the strip (elongate) in cycle of about 400 μ m, form and extend to dislocation concentrated area 228 n type covering 222 surfaces, that have about 10 μ m width from n type GaN substrate 221 back sides.N type GaN substrate 221 is " substrate " of the present invention examples, and n type layer 222 and n type covering 223 are examples of " semiconductor element layer " of the present invention and " first semiconductor layer ".

Here, in the 10th execution mode, above n type covering 223, till desired depth, remove, so that the thickness of n type covering 223 dislocation concentrated areas 228 is also littler with the thickness of exterior domain than n type covering 223 dislocation concentrated areas 228.In addition, on the zone beyond the dislocation concentrated area 228 on the n type covering 223, form luminescent layer 224 with MQW active layer.This luminescent layer 224 constitutes by having with luminescent layer 4 same thickness of the 1st execution mode shown in Figure 2 and each layer of nitride-based semiconductor of forming, simultaneously, have than n type covering 223 dislocation concentrated areas 228 with the also little width of the width of exterior domain (about 7.5 μ m).Luminescent layer 224 is examples of " semiconductor element layer " of the present invention.

On luminescent layer 224, form have protuberance, have about 4 * 10 by having mixed ¹⁹Cm ^-3Doping and about 5 * 10 ¹⁷Cm ^-3The P type Al of the Mg of carrier concentration _0.05Ga _0.95The P type covering 225 that N constitutes.The protuberance of this P type covering 225 has about 1.5 μ m width, simultaneously, has the height of outstanding about 300nm above the par.In addition, the par of P type covering 225 has the thickness of about 100nm.And, on the protuberance of P type covering 225, form have about 10nm thickness, have about 4 * 10 by having mixed ¹⁹Cm ^-3Doping and about 5 * 10 ¹⁷Cm ^-3The P type contact layer 226 that the P type GaN of the Mg of carrier concentration constitutes.And, by the protuberance and the P type contact layer 226 of P type covering 225, constitute the spine 227 of the strip (elongate) that extends to predetermined direction.P type covering 225 and P type contact layer 226 are examples of " semiconductor element layer " of the present invention and " the 2nd semiconductor layer ".

And, constituting on the P type contact layer 226 of spine 227,, form by Pt layer, have the Pd layer of about 100nm thickness and have the P side Ohmic electrode 229 that the Au layer of about 150nm thickness constitutes to the upper strata from lower floor with about 5nm thickness.P side Ohmic electrode 299 is examples of " face side electrode " of the present invention.In addition, remove the surface of exposing behind the n type covering 223 and above the P side Ohmic electrode 229 beyond zones on form the dielectric film 230 that constitutes by SiN film with about 250nm thickness.On the surface of insulating barrier 230, form by Ti layer, have the Pd layer of about 100nm thickness and have the P side liner electrode 231 that the Au layer of about 3 μ m thickness constitutes to the upper strata from lower floor with about 100nm thickness, so as with contact above the P side Ohmic electrode 229.At the back side of n type GaN substrate 221 near n type GaN substrate 221 back sides, form by Al layer in order, have the Pt layer of about 20nm thickness and have the n lateral electrode 232 that the Au layer of about 300nm thickness constitutes, so that contact with the whole face at n type GaN substrate 221 back sides with about 10nm thickness.

In the 10th execution mode, as noted above, make the thickness of n type covering 223 dislocation concentrated areas 228 also littler than the area thickness beyond the n type covering 223 dislocation concentrated areas 228, simultaneously, because the dislocation concentrated area on the n type covering 223 228 with exterior domain on, by forming luminescent layer 224, on n type covering 223 that luminescent layer 224 forms and the pn interface between the P type covering 225, do not form dislocation concentrated area 228, so can suppress to flow through the leakage current that produces because of dislocation concentrated area 228 electric currents.Its result because can easily make the light output stabilization of element when deciding current drives, can easily make the nitride-based semiconductor laser device working stabilityization.In addition, because can reduce the electric current that flows through of dislocation concentrated area 228, so can reduce unnecessary luminous from dislocation concentrated area 228.

In the 10th execution mode, because it is also littler than the width in the zone beyond the dislocation concentrated area 228 of n type covering 223 by the width that makes luminescent layer 224, diminish through the n type covering 223 of luminescent layer 224 formation and the pn interface between the P type covering 225, so can reduce the pn junction capacitance amount of n type covering 223 and P type covering 225.In view of the above, can make the response speed high speed of nitride-based semiconductor laser device.

Secondly, with reference to Figure 39～Figure 45, the manufacture process of the nitride-based semiconductor laser device of the 10th execution mode is described.

At first, as shown in figure 40, use and Fig. 3～same manufacture process of the 1st execution mode shown in Figure 9, form the spine 227 and the P side Ohmic electrode 229 that constitute up to protuberance and P type contact layer 226 by P type covering 225., on presumptive area P type covering 225 pars on dislocation concentrated area 228 beyond, form resist layer 241, so that cover the surface of P side Ohmic electrode 229 and spine 227 thereafter.

Secondly, as shown in figure 41, as mask, above P type covering 225 pars, till luminescent layer 224, carry out etching with resist 241.In view of the above, in the zone 228 that the dislocation of removing P type covering 225 and luminescent layer 224 is concentrated, make P type covering 225 and luminescent layer 224 width also littler than peak width beyond the n type covering 223 dislocation concentrated areas 228.Remove resist 241 thereafter.

Secondly, as shown in figure 42, use plasma CVD, formed have about 250nm thickness SiN film (not shown) to cover after whole, by removing the SiN film that is positioned at above the P side Ohmic electrode 229, form the dielectric film 230 that constitutes by SiN film with about 250nm thickness.

Secondly, as shown in figure 43, use vacuum vapour deposition, presumptive area on dielectric film 230 surfaces, form by Ti layer, have the Pd layer of about 100nm thickness and have the P side liner electrode 231 that the Au layer of about 3 μ m thickness constitutes to the upper strata from lower floor with about 100nm thickness, so as with contact above the P side Ohmic electrode 229.And, the back side of grinding n type GaN substrate 221, the thickness that makes n type GaN substrate 221 is about 100 μ m.Thereafter, use vacuum vapour deposition, at n type GaN substrate 221 back sides, forming by Al layer near n type GaN substrate 221 back sides, one side in order, having the Pt layer of about 20nm thickness and have the n lateral electrode 232 that the Au layer of about 300nm thickness constitutes, so that contact with the whole face at n type GaN substrate 221 back sides with about 10nm thickness.

Secondly, as shown in figure 44, use the RIE method of C1, remove from the dislocation concentrated area 228 of surface till the desired depth of dielectric film 230 and n type covering 223 of the P side liner electrode 231 of the borderline region of the element of adjacency.In view of the above, on the zone 228 that the element dislocation is concentrated, form ditch portion 233 with width W 2 (for example, about 60 μ m) also bigger than dislocation concentrated area 228 width.

Secondly, as shown in figure 45,, form line 234 with diamond pen (diamond point), central portion in ditch portion 233 bottoms.Along it rule with each spacing resolution element thereafter.So, form the nitride-based semiconductor laser device of the 10th execution mode as shown in figure 39.

(the 11st execution mode)

With reference to Figure 46, different with above-mentioned the 10th execution mode in the 11st execution mode, luminescent layer 224a has the identical width with n type covering 223a.In addition, remove above n type GaN substrate 221a till desired depth, make the thickness in the zone 228 that n type GaN substrate 221a dislocation concentrates also littler with the thickness of exterior domain than n type GaN substrate 221a dislocation concentrated area 228.And, on the zone beyond the dislocation concentrated area 228 on the n type GaN substrate 221a, sequentially form n type layer 222a, n type covering 223a, luminescent layer 224a, P type covering 225a and P type contact layer 226a.

In addition, on the par of P type covering 225a, form dielectric film 260 on the side of the 227a of spine and P side Ohmic electrode 229a.On the surface of dielectric film 260, form P side liner electrode 261, so as with contact above the P side Ohmic electrode 229a.N type GaN substrate 221a, n type layer 222a, n type covering 223a, luminescent layer 224a, P type covering 225a, P type contact layer 226a and P side Ohmic electrode 229a have thickness and the composition same with the GaN substrate 221 of above-mentioned the 10th execution mode, n type layer 222, n type covering 223, luminescent layer 224, P type covering 225, P type contact layer 226 and P side Ohmic electrode 229 respectively.In addition, dielectric film 260 and P side liner 261 have thickness and the composition same with the dielectric film 230 of above-mentioned the 10th execution mode and P side liner electrode 231 respectively.

Other formation and above-mentioned the 10th form of the 11st execution mode is same.

In the 11st execution mode, as noted above, make the thickness of dislocation concentrated area 228 of n type GaN substrate 221a also littler with the thickness of exterior domain than n type GaN substrate 221a dislocation concentrated area 228, simultaneously, because by on the zone beyond the dislocation concentrated area 228 on the n type GaN base 221a, sequentially forming n type layer 222a, n type covering 223a, luminescent layer 224a, P type covering 225a, and P type contact layer 226a, the pn interface does not form dislocation concentrated area 228 between n type covering 223a that forms through luminescent layer 224a and P type covering 225a, so it is same with above-mentioned execution mode, when the nitride-based semiconductor laser device working stabilityization can easily be made, can reduce unnecessary luminous from dislocation concentrated area 228.

Secondly, with reference to Figure 46～Figure 48, the manufacture process of the nitride-based semiconductor laser device of the 11st execution mode is described.

At first, as shown in figure 47, use and Fig. 3～same manufacture process of the 1st execution mode shown in Figure 11, when forming till P side liner electrode 261, grind the back side of n type GaN substrate 221a., use vacuum vapour deposition, on the back side of n type GaN substrate 221a, form n lateral electrode 232 and contact with whole face with the n type GaN substrate 221a back side thereafter.

Secondly, as shown in figure 48, component outline boundary region in adjacency, by irradiation YAG laser (fundamental wavelength: the 3rd high order harmonic component (355nm) 1.06 μ m), from P side liner electrode 261 surface, partly remove the dislocation concentrated area 228 till the desired depth of the n type GaN substrate 221a, P type covering 225a, luminescent layer 224a, n type covering 223a and the n type layer 222a that contain dielectric film 260.As the illuminate condition of this moment, set pulse frequency at about 10kHz, simultaneously, sweep speed is set in about 0.75mm/sec.In view of the above, on element dislocation concentrated area 228, form the ditch portion 263 of the width W 3 (for example, about 100 μ ms) also bigger than dislocation concentrated area 228 width.Thereafter, along its ditch portion 263 with each spacing resolution element.So, form the nitride-based semiconductor laser device of the 11st form shown in Figure 46.

In the manufacture process of the 11st execution mode, as noted above, by using YAG laser, be formed for ditch portion 263 with each spacing resolution element, because can make the width W 3 of ditch portion 263 also bigger, so can easily remove dislocation concentrated area 228 than the width of dislocation concentrated area 228.In view of the above, except being formed for the operation with the ditch portion 263 of each spacing resolution element, the operation of dislocation concentrated area 228 is removed in unnecessary increase.Its result can make manufacturing process simplify.

(the 12nd execution mode)

With reference to Figure 49, in the 12nd execution mode, different with above-mentioned the 10th execution mode, above n type GaN substrate 221b, till desired depth, remove, so that the thickness of n type GaN substrate 221b dislocation concentrated area 228 is also littler with the thickness of exterior domain than substrate 221b dislocation concentrated area 228.And, sequentially form n type layer 222b, n type covering 223b, luminescent layer 224, P type covering 225 and P type contact layer 226 in dislocation concentrated area 228 on the n type GaN substrate 221b on exterior domain.N type GaN substrate 221b, n type 222b and n type covering 223b have thickness and the composition same with the n type GaN substrate 221 of above-mentioned the 10th execution mode, n type layer 222 and n type covering 223 respectively.Here, the par of luminescent layer 224 and P type covering 225 has the width also littler than the width of n type covering 223b (about 4.5 μ m).

Other of the 12nd execution mode constitutes and above-mentioned the 10th execution mode is same.

In the 12nd execution mode,, can be inhibited and flow through the leakage current that produces etc. and the same effect of above-mentioned the 10th execution mode because of dislocation concentrated area 228 electric currents by formation as noted above.

Secondly, with reference to Figure 49 and Figure 50, the manufacture process of the nitride-based semiconductor laser device of the 12nd execution mode is described.

At first, use and Figure 40～same manufacture process of the 10th execution mode shown in Figure 43, form up to n lateral electrode 232.

Secondly, as shown in figure 50, with scribing (dicing), with the borderline region of the element that is adjacent to nitride-based semiconductor laser device in, partly remove from the dislocation concentrated area 228 of P side liner electrode 231 surfaces till the desired depth of the n type GaN substrate 221b, the n type covering 223b that contain dielectric film 230 and n type layer 222b.In view of the above, on the zone 228 that the element dislocation is concentrated, form ditch portion 273 with width W 4 (for example about 60 μ m) also bigger than the width of dislocation concentrated area 228.Thereafter, along ditch portion 273 with each spacing resolution element.So, form the nitride-based semiconductor laser device of the 12nd execution mode shown in Figure 49.

In the manufacture process of the 12nd execution mode, as noted above, because with scribing by being formed for ditch portion 273 with each spacing resolution element, can make the width W 4 of ditch portion 273 also bigger than the width of dislocation concentrated area 228, so can be same with the manufacture process of above-mentioned the 11st execution mode, easily remove dislocation concentrated area 228.Its result can make manufacturing process simplify.

(the 13rd execution mode)

With reference to Figure 51, illustrate that in the 13rd execution mode different with above-mentioned the 10th～the 12nd execution mode, zone more in the inner part, dislocation concentrated area forms the situation of selecting growth mask on than n type GaN substrate.

In the nitride-based semiconductor laser device of the 13rd execution mode, shown in Figure 51, near n type GaN substrate 281 ends, with the cycle of about 400 μ m, strip forms (elongate) and extends to dislocation concentrated area 288 surface, that have about 10 μ m width from n type GaN substrate 281 back sides.N type GaN substrate 281 has thickness and the composition same with the n type GaN substrate 221 of above-mentioned the 10th execution mode.N type GaN substrate 281 is examples of " substrate " of the present invention.

Here, in the 13rd execution mode, shown in Figure 52, dislocation zone more in the inner part, concentrated area 288 on than n type GaN substrate 281 forms the selection growth mask 293 of the strip (elongate) that is made of the SiN film with about 200nm thickness.This selection growth mask 293 has than the also little width W 5 (about 3 μ m) of dislocation concentrated area 288 width.Interval W6 from the element end up to the end of selecting growth mask 293 is about 30 μ m.Selecting growth mask 293 is examples of " first selects growth mask " of the present invention.

On the zone beyond the zone that is formed with the selection growth mask 293 on the n type GaN substrate 281, shown in Figure 51, sequentially form n type layer 282, n type covering 283, luminescent layer 284, P type covering 285 and P type contact layer 286.P type covering 285 has protuberance, and simultaneously, P type contact layer 286 forms on exterior domain in the par of P type covering 285.And, by being positioned at, constitute spine 287 than the protuberance of selecting growth mask 293 P type covering 285 more in the inner part and the P type contact layer 286 that on the protuberance of its P type covering 285, forms.In addition, be positioned at than selecting on growth mask 293 n type layer 282, n type covering 283, luminescent layer 284, P type covering 285 and the P type contact layer 286 more in the outer part by propagating the dislocation of n type GaN substrate 281, the zone 288 that the formation dislocation is concentrated.N type layer 282, n type covering 283, luminescent layer 284, P type covering 285 and P type contact layer 286 have thickness and the composition same with the n type layer 222 of above-mentioned the 10th execution mode, n type covering 223, luminescent layer 224, P type covering 225 and P type contact layer 226 respectively.N type layer 282, n type covering 283, luminescent layer 284, P type covering 285 and P type contact layer 286 are examples of " semiconductor element layer " of the present invention.

Here, in the 13rd execution mode, each layer of nitride-based semiconductor (282～286) in dislocation zone more in the inner part, concentrated area 288 and be positioned on the n type GaN substrate 281 formation recess 294 between each layer of nitride-based semiconductor (282～286) in the concentrated zone 288 of dislocation on being positioned at than n type GaN substrate 281.

On the P type contact layer 286 that constitutes spine 287, form P side Ohmic electrode 289.And, form dielectric film 290, to cover above the P side Ohmic electrode 289 with exterior domain.Forming P side liner electrode 291 than being positioned on recess 294 dielectric film 290 surfaces more in the inner part, so as with contact above the P side Ohmic electrode 289.P side Ohmic electrode 289, dielectric film 290 and P side liner electrode 291 have thickness and the composition same with the P side Ohmic electrode 229 of above-mentioned the 10th execution mode, dielectric film 230 and P side liner electrode 231 respectively.P side Ohmic electrode 289 is examples of " face side electrode " of the present invention.

In addition, on n type GaN substrate 281 back sides, form n lateral electrode 292, so that contact with zone in addition, dislocation concentrated area, n type GaN substrate 281 back sides 288.N lateral electrode 292 has thickness and the composition same with the n lateral electrode 232 of above-mentioned the 10th execution mode.

In the 13rd execution mode, as noted above, select growth mask 293 by on the zone more in the inner part, zone 288 of concentrating, forming than the dislocation on the n type GaN substrate 281, when each layer of growing nitride based semiconductor (282～286) on the n type GaN substrate 281, because selecting on the growth mask 293 not each layer of growing nitride based semiconductor (282～286), so each layer of nitride-based semiconductor (282～286) that can form on the dislocation zone more in the inner part, concentrated area 288 on than n type GaN substrate 281, and between each layer of nitride-based semiconductor (282～286) that forms on the dislocation concentrated area 288 on the n type GaN substrate 281 formation recess 294.Therefore, can separately be formed with each layer of nitride-based semiconductor (282～286) of dislocation concentrated area 288 and misplace each layer of nitride-based semiconductor (282～286) of concentrated area 288 of formation by recess 294.In view of the above, form P side Ohmic electrode 289 on the growth mask 293 P type contact layer 286 more in the inner part, can suppress to flow through the leakage current that produces because of dislocation concentrated area 288 electric currents by being positioned at than selecting.Its result is because can make element decide the output stabilization of current drives time, so can make the nitride-based semiconductor laser device working stabilityization.In addition, because separately be formed with each layer of nitride-based semiconductor (282～286) of dislocation concentrated area 288 and form each layer of nitride-based semiconductor (282～286) of dislocation concentrated area 288, so can suppress the light that absorbed by the concentrated area 288 that misplaces being positioned at light than concentrated area 288 luminescent layer 284 generations more in the inner part that misplace by recess 294.In view of the above, because it is luminous again with any wavelength to suppress the light that absorbed by the concentrated area 288 of being misplaced, so can suppress colorimetric purity variation because of so luminous generation again.

Secondly, with reference to Figure 51～Figure 55, the manufacture process of the nitride-based semiconductor laser device of the 13rd execution mode is described.

At first, shown in Figure 52 and Figure 53, with with Fig. 3～same manufacture process of the 1st execution mode shown in Figure 6, after forming n type GaN substrate 281, use plasma CVD method, form the selection growth mask 293 of the strip (elongate) that constitutes by SiN film in the presumptive area of n type GaN substrate 281 with about 200nm thickness.Specifically, the interval W7 (W6 * 2) by separating about 60 μ m on n type GaN substrate 281 with clamping dislocation concentrated area 288, forms the selection growth mask 293 with about 3 μ m width W 5.

Secondly, shown in Figure 54, use mocvd method,, sequentially form n type layer 282, n type covering 283, luminescent layer 284, P type covering 285 and P type contact layer 286 being formed with on the n type GaN substrate 281 of selecting growth mask 293.

At this moment, in the 13rd execution mode, because selecting not form each layer of nitride-based semiconductor (282～286) on the growth mask 293, so each layer of nitride-based semiconductor (282～286) that forms on the dislocation zone more in the inner part, concentrated area 288 on than n type GaN substrate 281, and between each layer of nitride-based semiconductor (282～286) that forms on the zone 288 that dislocation on the n type GaN substrate 281 is concentrated formation recess 294.In addition, on each layer of nitride-based semiconductor (282～286) that forms on the dislocation concentrated area 288 on the n type GaN substrate 281, the propagation of the dislocation by n type GaN substrate 281 forms the dislocation concentrated area 288 that extends to from n type GaN substrate 281 back sides above the P type contact layer 286.

Secondly, shown in Figure 55, use and Fig. 8～same manufacture process of the 1st execution mode shown in Figure 11, on being positioned at, form P side Ohmic electrode 289 than recess 294 P type contact layer 286 more in the inner part, simultaneously, form the spine 287 that constitutes by P type covering 285 protuberances and P type contact layer 286.In addition, form dielectric film 290 with the zone beyond covering above the P side Ohmic electrode 289 after, formation P side liner electrode 291 on being positioned at than the surface of recess 294 dielectric film 290 more in the inner part, so as with contact above the P side Ohmic electrode 289.Grind the back side of n type GaN substrate 281 thereafter.

At last, shown in Figure 51, use vacuum vapour deposition, the metal level (not shown) of formation formation n lateral electrode 292 is afterwards on whole on n type GaN substrate 281 back sides, by removing the metal level that is positioned at dislocation concentrated area 288, form the nitride semiconductor Laser device of the 13rd execution mode.

In the manufacture process of the 13rd execution mode, as noted above, the zone more in the inner part, zone 288 of concentrating by dislocation on than n type GaN substrate 281 forms the selection growth mask 293 with width W 5 also littler than dislocation concentrated area 288 width, because arrive to select all unstrpped gas total amounts in growth mask 293 surfaces to diminish, so correspondingly to carry out the quantitative change of the unstrpped gas of diffusion into the surface or its analyte little to being arranged in each layer of nitride-based semiconductor (282～286) surface of selecting growth mask 293 growth nearby from selecting growth mask 293 surfaces.In view of the above, select the nearby increase of the amount of the unstrpped gas on each layer of nitride-based semiconductor (282～286) surface of growth or its analyte of growth mask 293 because can reduce to be supplied to be arranged in, thus can suppress to be positioned at select growth mask 293 each layer of nitride-based semiconductor (282～286) nearby the thickness change greatly.Its result, the thickness that can suppress each layer of nitride-based semiconductor (282～286) select growth mask 293 nearby the position and away from selecting the locational inhomogeneous of growth mask 293.

(the 14th execution mode)

With reference to Figure 56, in the 14th execution mode, different with above-mentioned the 13rd execution mode, dislocation concentrated area 288 and ratio dislocation zone more in the inner part, concentrated area 288 form the selection growth mask 313a and the 313b that are made of the SiN film with about 100nm thickness respectively on n type GaN substrate 281.Select growth mask 313a to have than the also big width W 8 (about 188 μ m) of dislocation concentrated area 288 width.Select growth mask 313b to have than the also little width W 9 (about 2 μ m) of dislocation concentrated area 288 width.And, select growth mask 313b to dispose from the interval W10 that selects growth mask 313a to separate about 5 μ m.Selecting the interval W11 between growth mask 313b is about 10 μ m.Selecting growth mask 313a is " second selects growth mask " of the present invention example.Selecting growth mask 313b is an example of " first selects growth mask " of the present invention.

And, on the zone beyond the zone that is formed with selection growth mask 313a on the n

type GaN substrate

281 and 313b, sequentially form n type layer 282a, n type covering 283a, luminescent layer 284a, P type covering 285a and P type contact layer 286a.In addition, P type covering 285a has protuberance, and simultaneously, P type contact layer 286a forms on exterior domain in the par of P type covering 285a.And, by than be positioned at the protuberance of selecting growth mask 313b P type covering 285a more in the inner part and the P type contact layer 286a that forms constitutes the 287a of spine on the protuberance of its P type covering 285a.And the par of luminescent layer 284a and P type covering 285a has the width also littler than the width of n type covering 285a (about 10.5 μ m).

In the 14th execution mode, (do not form the concentrated area 288 that misplaces on the 282a～286a) here, at each layer of nitride-based semiconductor that forms on the n type GaN substrate 281.(282a～286a) and each layer of nitride-based semiconductor that is positioned at central portion on the n type GaN substrate 281 (form recess 314 between the 282a～286a) at each layer of nitride-based semiconductor that is positioned at dislocation concentrated area 288 sides on the n type GaN substrate 281.

On the P type contact layer 286a that constitutes the 287a of spine, form P side Ohmic electrode 289a.And, form dielectric film 310 with the zone beyond covering above the P side Ohmic electrode 289a.On dielectric film 310 lip-deep presumptive areas, form P side liner electrode 311, so as with contact above the P side Ohmic electrode 289a.This P side liner electrode 311 1 sides' end is configured on the dielectric film 310 that is positioned at dislocation concentrated area 288, and simultaneously, the opposing party's end is configured on the dielectric film 310 that is positioned on the P type covering 285a par.N type GaN substrate 281, n type layer 282a, n type covering 283a, luminescent layer 284a, P type covering 285a, P type contact layer 286a and P side Ohmic electrode 289a have respectively thickness and the composition same with the n type GaN substrate 221 of above-mentioned the 10th execution mode, n type layer 222, n type covering 223, luminescent layer 224, P type covering 225, P type contact layer 226 and P side Ohmic electrode 229.In addition, dielectric film 310 and P side liner electrode 311 have dielectric film 230 and P side liner electrode 231 same thickness and the composition with above-mentioned the 10th execution mode respectively.

On n type GaN substrate 281 back sides, form n lateral electrode 292, so that similarly contact with the zone in addition, dislocation concentrated area, the back side of n type GaN substrate 281 with above-mentioned the 13rd execution mode.

In the 14th execution mode, as noted above, on dislocation concentrated area 288 on the n type GaN substrate 281, select growth mask 313a by forming, at each layer of growing nitride based semiconductor on the n type GaN substrate 281 (when the 282a～286a), (282a～286a) is so can be controlled at (the formation of the concentrated area 288 that misplaces on the 282a～286a) of each layer of nitride-based semiconductor because selecting on the growth mask 313a not each layer of growing nitride based semiconductor.In view of the above, can suppress to flow through the leakage current that produces because of electric current on dislocation concentrated area 288.Its result because can make the light output stabilization of element when deciding current drives, can easily make the nitride-based semiconductor laser device working stabilityization.In addition, because can reduce the electric current that flows through of dislocation concentrated area 228, so can reduce unnecessary luminous from dislocation concentrated area 228.

Secondly, with reference to Figure 56～Figure 60, the nitride-based semiconductor laser device manufacture process of the 14th execution mode is described.

At first, shown in Figure 57 and Figure 58, with with Fig. 3～same manufacture process of the 1st execution mode shown in Figure 6, after forming n type GaN substrate 281, use plasma CVD method, the presumptive area on n type GaN substrate 281 forms the selection growth mask 313a and the 313b of the strip (elongate) that is made of the SiN film with about 100nm thickness.Specifically, on the dislocation concentrated area 288 on the n type GaN substrate 281, form the selection growth mask 313a of width W 12 (W8 * 2) with about 376 μ m.In addition, from selecting growth mask 313a to separate the interval W10 of about 5 μ m, formation has about 2 on n type GaN substrate 281

The selection growth mask 313b of the width W 9 of μ m.In addition, the interval W11 between selection growth mask 313b gets and makes about 10 μ m.

Secondly, shown in Figure 59, use mocvd method,, sequentially form n type layer 282a, n type covering 283a, luminescent layer 284a, P type covering 285a and P type contact layer 286a being formed with on the n type GaN substrate 281 of selecting

growth mask

313a and 313b.

At this moment, in the 14th execution mode, selecting not form on growth mask 313a and the 313b each layer of nitride-based semiconductor (282a～286a).Therefore, (do not form dislocation concentrated area 288 on the 282a～286a) at each layer of nitride-based semiconductor.In addition, at each layer of nitride-based semiconductor that dislocation concentrated area 288 sides on the n type GaN substrate 281 form (282a～286a) and at each layer of nitride-based semiconductor that forms in the middle folder portion on the n type GaN substrate 281 (formation recess 314 between the 282a～286a).

Secondly, shown in Figure 60, use and Fig. 8～same manufacture process of the 1st execution mode shown in Figure 11, on being positioned at, form P side Ohmic electrode 289a than recess 314 P type contact layer 286a more in the inner part, simultaneously, form the 287a of spine that protuberance and P type contact layer 286 by P type covering 285a constitute.Forming dielectric film 310 with after covering above the P side Ohmic electrode 289a with exterior domain, on dielectric film 310 lip-deep presumptive areas, form P side liner electrode 311 so that with contact above the P side Ohmic electrode 289a.Grind the back side of n type GaN substrate 281 thereafter.

At last, shown in Figure 56, use vacuum vapour deposition, the metal level (not shown) of formation formation n lateral electrode 292 is afterwards on whole on n type GaN substrate 281 back sides, by removing the metal level that is positioned at dislocation concentrated area 288, form the nitride-based semiconductor laser device of the 14th execution mode.

In the manufacture process of the 14th execution mode, as noted above, on than the zone more in the inner part, dislocation concentrated area 288 on the n type GaN substrate 281, the selection growth mask 313b that has the width W 9 also littler by formation than the width of dislocation concentrated area 288, each layer of growing nitride based semiconductor is (when the 282a～286a), because arrive to select surperficial all unstrpped gas total amounts of growth mask 313b to tail off, so correspondingly (quantitative change that 282a～286a) carries out on the surface unstrpped gas of diffusion into the surface or analyte is few from the surface of selecting growth mask 313b to being arranged in each layer of nitride-based semiconductor of selecting the growth near the growth mask 313b.In view of the above, be arranged in each layer of nitride-based semiconductor of selecting growth mask 313b growth nearby (increase of the unstrpped gas on the surface of 282a～286a) or the amount of its analyte is selected nearby each layer of nitride-based semiconductor of growth mask 313b (the thickness change of 282a～286a) greatly so can suppress to be positioned at because can reduce to be supplied to.Its result, (thickness of 282a～286a) is being selected nearby position and from selecting to become inhomogeneous on the growth mask 313b position far away of growth mask 313b can to suppress each layer of nitride-based semiconductor.

Secondly, with reference to Figure 61, the manufacture process of the nitride-based semiconductor laser device of the 14th execution mode variation is described.

Manufacture process at the nitride semiconductor Laser device of the variation of the 14th execution mode, shown in Figure 61, on n type GaN substrate 281, form selection growth mask 323b, form regional 281b with embracing element with width W 13 (about 3 μ m) also littler than dislocation concentrated area (not shown) width.At this moment, a plurality of peristome 323c (element-forming region 281b) are configured with predetermined spacing along element detaching direction (the A direction of Figure 61), and form selection growth mask 323b, make the peristome 323c (element-forming region 281b) that is right after the direction of riving (the B direction of Figure 61) be configured to mutual difference.The width W 14 of the B direction of peristome 323c (element-forming region 281b) is set in about 12 μ m.In addition, form selection growth mask 323a from the whole zone of selecting growth mask 323b to separate the interval W15 of about 8 μ m.

Thereafter, same with the manufacture process of above-mentioned the 14th execution mode, forming each layer of nitride-based semiconductor (not shown) afterwards, form dielectric film (not shown) and each layer of electrode (not shown).

In the manufacture process of the nitride-based semiconductor laser device of the variation of the 14th execution mode, as noted above, on n type GaN substrate 281, formation has the selection growth mask 323b of a plurality of peristome 323c, its peristome 323c disposes with preset space length along the A direction, and the peristome 323c of itself and B direction adjacency differently configuration mutually.Afterwards, by on the zone beyond the zone of the selection growth mask 323b that is formed with n type GaN substrate 281, forming each layer of nitride-based semiconductor, because selecting not form each layer of nitride-based semiconductor on the growth mask 323b, thus only with corresponding each layer of zone formation nitride-based semiconductor of peristome 323c on the n type GaN substrate 281.In view of the above, because each layer of nitride-based semiconductor that forms on the zone corresponding with the peristome 323c of n type GaN substrate 281 is in the distance of A direction, littler than each layer of nitride-based semiconductor when the A direction forms each layer of nitride-based semiconductor continuously on n type GaN substrate 281 in the distance of A direction, produce the crack so can suppress the distance of the A direction part that diminishes.In this case because with the peristome 323c (element-forming region 281b) of B direction adjacency differently configuration mutually, so the A direction also can be mutually differently in abutting connection with, configuration element-forming region 281b.In view of the above, because can frontier defense crack arrest the generation of seam, the limit can obtain with on the n type GaN substrate 281 the A direction continuously and when forming each layer of nitride-based semiconductor components identical form the zone, so generation that can frontier defense crack arrest seam, the limit suppresses the reduction of n type GaN substrate 281 utilization ratios.

(the 15th execution mode)

With reference to Figure 62～Figure 64, explanation is in the 15th execution mode, different with above-mentioned the 10th～the 14th execution mode, in the dislocation concentrated area of removing till n type covering, nitride-based semiconductor laser device is installed in the situation of semiconductor laser inside.

In the nitride-based semiconductor laser device 330 of the 15th execution mode, shown in Figure 63, have about 100 μ m thickness and mixed and had about 5 * 10 ¹⁸Cm ^-3On the n type GaN substrate 331 of the oxygen of carrier concentration, form have about 100nm thickness, have about 5 * 10 by having mixed ¹⁸Cm ^-3The n type layer 332 that the n type GaN substrate of the Si of doping constitutes.N type GaN substrate 331 has the buergerite structure, and has the surface of (0001) face.In addition, near the both ends of n type GaN substrate 331 and n type layer 332, strip forms till n type GaN substrate 331 back sides extend to above the n type layer 332 and dislocation concentrated area 331a that have about 10 μ m width (elongate) respectively.N type GaN substrate 331 is examples of " substrate " of the present invention, and n type layer 332 is examples of " semiconductor element layer " of the present invention and " first semiconductor layer ".

Here, in the 15th execution mode, on the zone beyond the regional 331a that 332 dislocation of n type layer are concentrated, sequentially form n type covering 333, luminescent layer 334 and P type covering 335 with the width D 1 littler (about 7.5 μ m) than n type GaN substrate 331 width.

N type covering 333 has about 5 * 10 by having mixed when having about 400nm thickness ¹⁸Cm ^-3Doping and about 5 * 10 ¹⁸Cm ^-3The n type Al of the Si of carrier concentration _0.05Ga _0.95N constitutes.N type covering 333 is examples of " semiconductor element layer " of the present invention and " first semiconductor layer ".

Luminescent layer 334 shown in Figure 64, is made of n type charge carrier blocking layer 334a, n type photoconductive layer 334b, MQW active layer 334e, unadulterated photoconductive layer 334f and P type clearance layer 334g.N type charge carrier blocking layer 334a has about 5nm thickness, simultaneously, has about 5 * 10 by having mixed ¹⁸Cm ^-3Doping and about 5 * 10 ¹⁸Cm ^-3The n type Al of the Si of carrier concentration _0.1Ga _0.9N constitutes.N type photoconductive layer 334b has about 100nm thickness, simultaneously, has about 5 * 10 by having mixed ¹⁸Cm ^-3Charge carrier doping and about 5 * 10 ¹⁸Cm ^-3The n type GaN of the Si of carrier concentration constitutes.In addition, MQW active layer 334e reciprocally lamination by unadulterated In with about 20nm thickness _0.05Ga _0.954 layers of barrier layer 334c that N constitutes and have the unadulterated In of about 3nm thickness _0.15Ga _0.853 layers of trap layer 334d that N constitutes.Luminescent layer 334 is examples of " semiconductor element layer " of the present invention, and MQW active layer 334e is an example of " active layer " of the present invention.In addition, unadulterated photoconductive layer 334f is made of the unadulterated GaN with about 100nm thickness.P type current-carrying sublayer 334g has about 20nm, simultaneously, has about 4 * 10 by having mixed ¹⁹Cm ^-3Doping and about 5 * 10 ¹⁷Cm ^-3The P type Al of carrier concentration Mg _0.1GaN constitutes.

As shown in Figure 6, P type covering 335 has about 4 * 10 by having mixed ¹⁹Cm ^-3Doping and about 5 * 10 ¹⁷Cm ^-3The P type Al of the Mg of carrier concentration _0.05Ga _0.95N constitutes.This P type covering 335 comprises par 335a and gives prominence to the protuberance 335b that forms like that from par 335a mediad top.And the par 335a of P type covering 335 has the width D 1 littler and identical with the width of luminescent layer 334 than said n type GaN substrate 331 width (about 7.5 μ m), simultaneously, has about 100nm thickness.The protuberance 335b of P type covering 335 has the width W 16 also littler than luminescent layer 334 width (about 1.5 μ m), simultaneously, has the projecting height of about 300nm above the 335a of par.P type covering 335 is examples of " semiconductor element layer " of the present invention and " second semiconductor layer ".

On the protuberance 335b of P type covering 335, form have about 10nm thickness, have about 4 * 10 by having mixed ¹⁹Cm ^-3Doping and about 5 * 10 ¹⁷Cm ^-3The P type contact layer 336 that the P type GaN of the Mg of carrier concentration constitutes.And, by the protuberance 335b and the P type contact layer 336 of P type covering 335, become the spine 337 of the strip (elongate) in current path zone.Constituting on the P type contact layer 336 of spine 337, forming by Pt layer, have the Pd layer of about 100nm thickness and have the P side Ohmic electrode 338 that the Au layer of about 150nm thickness constitutes to the upper strata with about 5nm thickness from lower floor.P type covering 335 and P type contact layer 336 are examples of " semiconductor element layer " of the present invention and " the 2nd semiconductor layer ", and P side Ohmic electrode 338 is examples of " face side electrode " of the present invention.In addition, form the dielectric film 339 that constitutes by SiN film, with the zone beyond covering above the P side Ohmic electrode 338 with about 250nm thickness.

Here, in the 15th execution mode, shown in Figure 62 and Figure 63, on the presumptive area of dielectric film 339, formation has the P side liner electrode 341 of the width B 1 also littler than n type GaN substrate 331 width (about 150 μ m), so as with contact above the P side Ohmic electrode 338.This P side liner electrode 341, shown in Figure 62, plane earth see form square.And, form on P side liner electrode 341 1 sides' the dielectric film 339 of end 341a on be positioned at n type layer 332, so that extend to till the zone that surmounts the 334h zone, end that is positioned at luminescent layer 334 1 sides.P side liner electrode 341 the opposing party's end 341b forms on the dielectric film 339 that is positioned on n type covering 333 sides, so that extend to till the zone in zone of the end 334i that surmounts luminescent layer 334 the opposing party.The end 341a that forms P side liner electrode 341 1 sides makes it have the tabular surface that can go between and connect, and on the contrary, P side liner electrode 341 the opposing party's end 341b is not provided with the tabular surface that can go between and connect.Therefore, P side liner 341 the opposing party's end 341b compares with a side end 341a, and the distance of leaving spine 337 is little.P side liner electrode 341, is made of the Ti layer with about 100nm thickness, the Au layer that has the Pd layer of about 100nm thickness and have about 3 μ m thickness to the upper strata from lower floor.And, on a side's of P side liner 341 end 341a, be used for the distribution 342 that P side liner electrode 341 1 sides' end 341a is connected with external electric and connect.

On the zone beyond the dislocation concentrated area 331a at n type GaN substrate 331 back sides, from the back side, form by A1 layer in order, have the Pt layer of about 20nm thickness and have the n lateral electrode 343 that the Au layer of about 300nm thickness constitutes with about 10nm thickness near n type GaN substrate 331.

Secondly, with reference to Figure 62, Figure 63 and Figure 65, the structure with the semiconductor laser of the nitride-based semiconductor laser device of the 15th execution mode is described.

Use the semiconductor laser of the nitride-based semiconductor laser device 330 of the 15th execution mode, shown in Figure 65, comprise base 351 that nitride-based semiconductor laser device 330 has been installed and the cover 352 that is used for gas-tight seal.3 lead-in wire 351a～351c are set on base 351, and simultaneously, lead-in wire 351a and 351b are outstanding above base 351 in 3 lead-in wire 351a～351c.In addition, piece (block) 353 is set on base 351, simultaneously, attached hanger bracket 354 is set on the side of piece 353.And the nitride-based semiconductor laser device 330 of the 15th execution mode is installed on this attached hanger 354.Specifically, configured in parallel above the relative base 351 of the parting plane of nitride-based semiconductor laser device is so that vertical direction penetrates above the relative base 351 of laser.In addition, going up the distribution 342 that connects at the end 341a (with reference to Figure 62 and Figure 63) of the P side liner electrode 341 that constitutes nitride semiconductor Laser device 330 is electrically connected with lead-in wire 351a.With the opposed zone of the parting plane of nitride-based semiconductor laser device above the base 351 photo detector 355 is being installed.A side's of combined leads 356 end on this photo detector 355, simultaneously, another square end of this lead-in wire 356 is connected with lead-in wire 351b.And cover 352 and on base 351, weld, so that cover nitride-based semiconductor laser device 330 and photo detector 335.

In the 15th execution mode, as noted above, the width D 1 (about 7.5 μ m) of the luminescent layer 334 that on making n type covering 333, forms than n type GaN substrate 331 width also little in, by making P type covering 335 width that form on the luminescent layer 334 identical with the width of luminescent layer 334, because the pn tie region diminishes between n type covering 333 that luminescent layer 334 forms and P type covering 335, so can reduce the pn junction capacitance.Also littler by P side liner electrode 341 width B 1 (about 150 μ m) that form on the presumptive area that makes dielectric film 339 than n type GaN substrate 331 width, can reduce the parasitic capacitance that forms by P side liner electrode 341, dielectric film 339 and n type layer 332.Its result can make the response speed high speed of nitride-based semiconductor laser device 330.

In the 15th execution mode, by forming P side liner electrode 341 end 341a on the dielectric film 339 on be positioned at n type layer 332 so that till extending to the zone that surmounts the 334h zone, end that is positioned at luminescent layer 334 1 sides, even make P side liner electrode 341 width B 1 (about 150 μ m) also littler than n type GaN substrate 331 width, at p side liner electrode 341 1 sides' in the 334h zone of living in, end that surmounts luminescent layer 334 1 sides end 341a, also can be electrically connected with lead-in wire 351a.In view of the above, even when making P side liner electrode 341 width B 1 (about 150 μ m) also littler than n type GaN substrate 331 width, the connection between P side liner electrode 341 and the lead-in wire 351a is also had no problem.In addition, by on the P type covering 335 that forms on the luminescent layer 334, par 335a being set, even the protuberance 335b with the width W 16 also littler than luminescent layer 334 width (about 1.5 μ m) is set on P type covering 335, because can suppress to make light cross strong sealing, so can make the transverse mode stabilisation at transverse direction by par 335a.In view of the above, can suppress the reduction of the characteristics of luminescence of nitride-based semiconductor laser device 330.

In the 15th execution mode, on the zone beyond the n type layer 332 dislocation concentrated area 331a, because by forming n type covering 333, luminescent layer 334 and P type covering 335, on n type covering 333, luminescent layer 334 and P type covering 335, do not form dislocation concentrated area 331a, flow through so can be suppressed at the last electric current of dislocation concentrated area 331a.In view of the above, can suppress to flow through the leakage current that produces because of dislocation concentrated area 331a goes up electric current.In addition, go up electric current and flow through because can be suppressed at dislocation concentrated area 331a, thus can reduce from dislocation concentrated area 331a come unnecessary luminous.In view of the above, can make the working stabilityization of nitride-based semiconductor laser device 330.

In this disclosed execution mode, will be understood that the illustrative situation of the premises that is not limited to.Scope of the present invention does not illustrate by the claim scope by above-mentioned execution mode explanation, and also comprising with the claim scope has same meaning and all changes in scope.

For example, in above-mentioned the 1st～the 15th execution mode, be illustrated using example of the present invention in nitride-based semiconductor laser device and the light-emitting diode as semiconductor element one example, yet the present invention is not limited to this, also may use for other semiconductor element beyond nitride-based semiconductor laser device or the light-emitting diode.

In above-mentioned the 1st～the 15th execution mode, use n type GaN substrate or comprise the sapphire substrate of nitride-based semiconductor layer as substrate, yet the invention is not restricted to this, also can use spinelle substrate, Si substrate, SiC substrate, GaAs substrate, GaP substrate, InP substrate, quartz wafer and ZrB ₂The substrate of substrate etc.

In above-mentioned the 1st～the 15th execution mode, formed each layer of nitride-based semiconductor of buergerite structure, yet, the invention is not restricted to this, also can form each layer of nitride-based semiconductor of zincblende type structure.

In above-mentioned the 1st～the 15th execution mode, with each layer of mocvd method crystalline growth nitride-based semiconductor, yet, the invention is not restricted to this, also can and use with the HVPE method with TMA1, TMGa, TMIn, NH ₃, SiH ₄, GeH ₄And Cp ₂Mg etc. as the gas source MBE method of unstrpped gas (Molecular Beam Epitaxy: the molecular beam epitaxial growth method) etc., also can each layer of crystalline growth nitride-based semiconductor.

In above-mentioned the 1st～the 15th execution mode, the surface of each layer of lamination nitride-based semiconductor is (0001) face, yet, the invention is not restricted to this, also can each laminar surface of lamination nitride-based semiconductor, so that become other direction.For example also can each laminar surface of lamination nitride-based semiconductor, make it become (1-100) face or (11-20) (H, K ,-H-K, O) face of face etc.In this case, because in the MQW active layer, do not produce piezoelectric field, so can suppress can reduce in conjunction with probability again because of the trap layer with positive cave and the electronics that slope causes.Its result can improve the luminous efficiency of MQW active layer.In addition, also can use from (1-100) face or (11-20) substrate of face tilt.

In above-mentioned the 1st～the 15th execution mode, show with the active layer of MQW structure example as active layer, yet, the invention is not restricted to this, even have the individual layer of big thickness of no quantum effect or the active layer of single quantum well structure also can obtain same effect.

In above-mentioned the 1st～the 15th execution mode, make the dislocation concentrated area use the substrate that forms strip, yet the invention is not restricted to this, the substrate that forms strip other shape in addition also can be used in the dislocation concentrated area.For example, in Fig. 4, also can use peristome to disperse into the mask of trigonal lattice palisade, form the substrate that the dislocation concentrated area is dispersed into the trigonal lattice palisade by becoming mask 24.At this moment corresponding to the dislocation concentrated area that disperses,, then can obtain same effect if form the dielectric film of dispersion or the high resistance area of dispersion.In addition, even form recess, also can obtain same effect to surround the dislocation concentrated area that disperses.

In addition, in the above-mentioned the 1st～the 8th and the 10th～the 15th execution mode, lead at growing n-type GaN layer on the sapphire substrate, can form n type GaN substrate, yet the invention is not restricted to this, also can form n type GaN substrate by growing n-type GaN layer on the GaAs substrate.Specifically, use the HVPE method, after the n type GaN layer of the oxygen that forming has mixed has about 120 μ m～about 400 μ m thickness, form n type GaN substrate on the GaAs substrate by removing the GaAs substrate.At this moment, the carrier concentration that is preferably formed to measuring by the Hall effect of n type GaN substrate is about 5 * 10 ¹⁸Cm ^-3, and by SIMS (Secondary Ion MassSpectroscopy: the secondary ion quality analysis) impurity concentration that records is about 1 * 10 ¹⁹Cm ^-3Also can select the growth mask layer to make the growth of n type GaN course transverse direction on the presumptive area on this external GaAs substrate by forming.

In the above-mentioned the the 1st, the 2nd, the 4th, the 6th～the 9th and the 10th～the 15th execution mode, between the dislocation concentrated area, form spine on the central portion substantially, right face the invention is not restricted to this, and at about 150 μ m from a side end, the position of about 250 μ m also can form spine from the other end.At this moment because and to be positioned at the nitride-based semiconductor in the central portion displacement zone of dislocation between the concentrated area better than the crystallinity that is positioned at the nitride-based semiconductor of cardinal principle central portion between the dislocation concentrated area, so can improve the life-span of nitride-based semiconductor laser device.

In the above-mentioned the 3rd and the 5th execution mode, form ohm transparency electrode in the n side, yet, the invention is not restricted to this, also can form ohm transparency electrode in the p side.

Claims

1, a kind of semiconductor element is characterized in that, comprises:

Form on the substrate surface, have the semiconductor element layer of the surf zone that dislocation concentrates on the part on the surface at least;

The recess that on the described surf zone zone more in the inner part of concentrating, forms than described dislocation; With

The face side electrode that forms in the regional contacted mode on the surface of the described semiconductor element layer beyond the described surf zone of concentrating with described dislocation,

Wherein, described semiconductor element layer also comprise active layer and be formed on described active layer and described substrate between first semiconductor layer of first conductivity type,

Described recess has the degree of depth that arrives described first semiconductor layer at least.

2, semiconductor element according to claim 1 is characterized in that,

Have the zone, the back side that described dislocation is concentrated on the described substrate part at least overleaf,

Also comprise the rear side electrode that the regional contacted mode with the back side of the described substrate beyond the zone, the described back side of concentrating with described dislocation forms.

3, semiconductor element according to claim 2 is characterized in that,

Also be included in the dielectric film that forms on the concentrated zone, the described back side of described dislocation.

4, semiconductor element according to claim 2 is characterized in that,

Described substrate comprises the nitride-based semiconductor substrate.

5, semiconductor element according to claim 1 is characterized in that,

Described semiconductor element layer has protuberance.

6, a kind of method of making semiconductor element may further comprise the steps:

Forming the semiconductor element layer that has the surf zone that dislocation concentrates on the part on the surface at least on the substrate surface;

On the described surf zone zone more in the inner part of concentrating than described dislocation on the described semiconductor element laminar surface, form recess; With

Forming the face side electrode contacts the zone on the surface of the described surf zone described semiconductor element layer in addition that this face side electrode and described dislocation concentrate.

7, the method for manufacturing semiconductor element according to claim 6 is characterized in that,

Have the zone, the back side that described dislocation is concentrated on the described substrate part at least overleaf, and,

Being formed with the rear side electrode contacts the zone at the back side of the described substrate beyond the zone, the described back side that this rear side electrode and described dislocation concentrate.

8, the method for manufacturing semiconductor element according to claim 7 is characterized in that,

On the zone, the described back side that described dislocation is concentrated, be formed with dielectric film.