CN100503423C - Method for preparing interval and configuration adjustable nano particle ordered array - Google Patents

Method for preparing interval and configuration adjustable nano particle ordered array Download PDF

Info

Publication number
CN100503423C
CN100503423C CNB2006100407418A CN200610040741A CN100503423C CN 100503423 C CN100503423 C CN 100503423C CN B2006100407418 A CNB2006100407418 A CN B2006100407418A CN 200610040741 A CN200610040741 A CN 200610040741A CN 100503423 C CN100503423 C CN 100503423C
Authority
CN
China
Prior art keywords
nano particle
template
substrate
nano
particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2006100407418A
Other languages
Chinese (zh)
Other versions
CN1884042A (en
Inventor
时钟涛
韩民
周剑峰
宋凤麒
万建国
王广厚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing University
Original Assignee
Nanjing University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing University filed Critical Nanjing University
Priority to CNB2006100407418A priority Critical patent/CN100503423C/en
Publication of CN1884042A publication Critical patent/CN1884042A/en
Application granted granted Critical
Publication of CN100503423C publication Critical patent/CN100503423C/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

The invention relates to preparation method of space and configuration-adjustable nano granule ordered array. The method comprises steps of dissolving block polymer in solvent, rotably coating the substrate(5) with solution, placing substrate in weighing bottle with toluene drop, sealing the bottle with aluminum foil or cotton cloth, and making ordered pattern template, fixing it on substrate, placing it in settling chamber (8), exhausting air to vacuum, filling inert gas into condense chamber (6). Atomizer (1) produce atom gas through magnetron sputtering or high temperature evaporation. The atom gas is condensed by inert gas to form into nano particle and form highly-oriented nano particle beam current (4) through spray nozzle . The nano particle beam current is deposited on template substrate. The deposit is stopped when covering rate is not more than 100%, thus linear nano particle array or two-dimensional ordered nano particle array is obtained. The invention has simple process, low cost, high efficiency, easy to achieve scaled production.

Description

The preparation method of the nano particle ordered array of spacing and configuration adjustable and controllable
One, technical field
Nano material and nano-device, the biological/chemical sensor field
Two, background technology
Nano-grain array has important application background in nanosecond science and technology, developed multiple preparation method in the world.But, still lack cheap at present and effective control device for the preparation of the nano particle ordered array below diameter 30 nanometers.Though existing photoetching technique can accurately be constructed the particle oldered array of micron dimension and hundreds of nanometer scale, photoetching technique is subjected to the diffraction of light limit, is not suitable for preparing the following structure of 100nm.In theory, electron beam lithography technology and ion beam etching technology also have the ability to prepare tens nanometer even the following nanostructured of 10nm, but electron beam or ion beam etching technology are because cost is high, efficient is extremely low, and the application prospect on the mass preparation of the nanostructured that is lower than 30 nanometers is extremely noncommittal.PSTM that development in recent years is got up and AFM manipulation technology, though can reach the accurate control of atom level, the work in series pattern of its poor efficiency makes it can't reach the industrial requirements of scale preparation too.Therefore, people have more and more forwarded sight to that to utilize self assembling process and prefabricated nanostructured be the synthetic new nano particles array of template in recent years, and it provides simply, nanometer packaging technology cheaply.At present, developed the oldered array that several different methods prepares the nano particle dense accumulation.But, arrange aspect the preparation of the stabilized nanoscale particle oldered array that configuration can design and regulate and control in a big way in obtaining interparticle distance and particle, still lack extensive suitable self-assembly preparation method thereof so far.Recently, people (S.B.Darling such as the S.B.Darling of Univ Chicago USA and S.J.Sibener, N.A.Yufa, A.L.Cisse, S.D.Bader, S.J.Sibener, Advanced Materials, 17,2446 (2005)) once reported the polymer that utilizes photochemical method for synthetic nanometer Fe-Pt particle (particle size is less than the 30 nanometers) array of template.But the size of the nano particle that synthesizes in this method is uncontrollable and its arrangement all is unordered at random, and interparticle distance can not be selected control fully with the configuration of arranging.In a word, less than the scale preparation of the oldered array of the nano particle of 30 nanometers, do not form the universal method of high efficiency, low cost for the size of spacing and the configuration adjustable and controllable of arranging at present as yet.
Three, summary of the invention
1. goal of the invention
The object of the present invention is to provide a kind of method for preparing the nano particle ordered array of spacing and configuration adjustable and controllable.In nano material that the method can be applicable to use always and the device preparing process flow process, have that low cost, technology are simple, high efficiency, be easy to characteristics such as scale.
2. technical scheme
The present invention is that the orderly pattern that utilizes the block polymer self assembly to form is template, guiding deposits to template surface and at the controllable nanon size particle of template surface directed movement, obtains having the controlled preparation of specific distance and the nano particle ordered array of the configuration of arranging.Because the size of nano particle can be regulated very easily in this method, therefore overcome in the conventional method for the uppity shortcoming of little nano-particles size.The orderly pattern that block polymer self assembly simultaneously forms also can be realized by changing correlated condition very easily.Therefore, this method provides a kind of universal method for preparing the controlled ordered nano array of particles of particle size, spacing, the configuration of arranging efficiently, at low cost.
The operation principle of this method is: the orderly pattern that utilizes the block polymer self assembly to form is template, the nanometer particle beam of directed movement is deposited on these templates, the modification of template is reached the purpose of formation orderly nano particle (particle size is less than 30 nanometers) array by nano particle.Lattice structure parameters such as the spacing of nano particle, arrangement configuration are then determined by the pattern and the correlated characteristic yardstick of template.
The preparation method of the nano particle ordered array of spacing and configuration adjustable and controllable, its preparation process is as follows:
(1) block polymer is dissolved in the non-selective solvent, forms the shared percentage by weight of block polymer and be<final solution of 10wt%; Final solution with (<50 μ l) is spun on the substrate 5 of cleaning again, then substrate 5 is positioned in the measuring cup, in splash into toluene, again measuring cup is sealed to control different evaporation rates and then to prepare the orderly pattern template with different-shape feature with aluminium foil or cotton, it is the template of parallel column pattern in the face, or the template of ordered porous stratiform pattern, described non-selective solvent is toluene or chloroform or methyl alcohol;
(2) template with above-mentioned orderly pattern is fixed on the rotatable block substrate 5, then block substrate 5 is sealed on the appropriate location of high vacuum settling chamber 8;
(3) utilize extract system Lodz pump 9 and molecular pump 10, the vacuum that makes settling chamber 8 is 10 -4Pa~10 -5During Pa, in the condensation chamber 6 of gas phase aggregation method cluster beam source, charge into the inert gas of 50~200Pa, under this air pressure, produce high density target atom gas by the atomizer in the gas phase aggregation method cluster beam source 71 by magnetron sputtering or high temperature evaporation, be grown to serve as nano particle in the inert gas of target atom in condensation chamber 6, nano particle is ejected into the rough vacuum end that air pressure is the high vacuum settling chamber 8 of 0.1Pa with the aerodynamics nozzle 2 of inert gas by 2 mm dias, form nanometer particle beam, it is 10 that nanometer particle beam enters vacuum through the collimater 3 of 2mm diameter again -4Pa~10 -5The condition of high vacuum degree end of the high vacuum settling chamber 8 of Pa, the nanometer particle beam 4 of formation high orientation;
(4) block substrate 5 in the rotation high vacuum settling chamber 8, make the template substrate surface become certain incidence angle (as 45 °) with nanometer particle beam, the control nanometer particle beam is to the time of template substrate deposition, make coverage rate≤100% of nano particle on template substrate, stop deposition, utilize the modification of nano particle to template, the spacing of nano particle, lattice structure parameters such as arrangement configuration are determined by the pattern and the correlated characteristic yardstick of template, thereby form orderly nano-grain array, its particle size is less than 30 nanometers, the template of parallel column pattern in the face of being deposited on then can obtain linear nano particles array; Template when being deposited on ordered porous stratiform pattern then can obtain the sequential 2 D nano particles array.
Block polymer described in the above-mentioned preparation process 1 is polystyrene-polybutadiene-polystyrene (SBS) triblock polymer; Or polystyrene-polymethyl methacrylate bi-block copolymer; Or polystyrene-polyisoprene bi-block copolymer, or polystyrene-polyvinylpyrrolidone bi-block copolymer.Described clean substrate is quartz glass plate or silicon chip.
Charge into the inert gas of 50~200Pa to condensation chamber 6 described in the above-mentioned steps 3.
Size, spacing and the configuration of the nano particle described in above-mentioned steps (3), (4) are all regulated and control with actual demand, the deposition control of nano particle on template in the size of nano particle and the step (4) in the line that the air pressure that the size of nano particle charges into inert gas by step (3) by distance between change atomizer (1) and the aerodynamics nozzle (2) or change is controlled; Different block polymer molecular weight is wide with the post in the template of parallel column pattern in the change face by selecting for the nano particle spacing, hole size, hole spacing in the template of intercolumniation or ordered porous stratiform pattern are controlled; The configuration of nano particles array is then controlled by the evaporation rate in the step (1).
3. beneficial effect
The present invention proposes the method for the controlled ordered nano array of particles of a kind of new preparation particle size, spacing, configuration of arranging, the orderly pattern that promptly utilizes the block polymer self assembly to form is template, the decoration of template is reached the purpose of the orderly nano-grain array of formation by the nano particle of controllable size.Than other the method for preparing nano-grain array, the present invention has overcome nanoparticle size size, spacing and has arranged the not shortcoming of easy-regulating of configuration, and particle has extraordinary long-range order in array, and the preparation technology of this nano particle ordered array is also very simple simultaneously.Because the size of nano particle can be by changing easy the regulating of correlated condition, this just makes the present invention's nano particle ordered array of preparation size size continuous variable according to the actual requirements, and the template of the orderly pattern that block polymer self assembly simultaneously forms also can realize by changing correlated condition very easily.The method of the ordered nano array of particles of therefore the invention provides a kind of high efficiency, low cost, be easy to the scale preparation particle size, spacing, the configuration of arranging are controlled.Preparation process can be monitored in real time by various rigorous analysis technology simultaneously, has good compatibility with the modern device manufacture craft technically.
Four, description of drawings
Fig. 1: the generation and the precipitation equipment that are used to realize preparation method's of the present invention nanometer particle beam.
Reference numeral:
1-atomizer (magnetron sputtering, high temperature evaporation etc.);
The condensation chamber of 2-aerodynamics nozzle, 3-collimater, 4-nanometer particle beam, the rotatable block substrate of 5-and substrate, 6-growth nano-particle, 7-gas phase aggregation method cluster beam source, 8-high vacuum settling chamber, 9-Lodz pump, 10-molecular pump, 11-inert gas entrance.
Fig. 2: linear nano-grain array schematic diagram
Fig. 3: two-dimensional nano array of particles schematic diagram
Five, the specific embodiment
Below with the deposition of noble metal nano particles on the orderly pattern template of block polymer, forming nano particle linear array and two-dimensional nano array of particles is example, and the basic procedure of this method is described:
The preparation method of the nano particle ordered array of embodiment 1 spacing and configuration adjustable and controllable, its preparation process is as follows:
(1) 0.1g polystyrene-polybutadiene-polystyrene (SBS) triblock polymer is dissolved in the 9.9g toluene, forming percentage by weight is the final solution of 1wt%; Be spun on 20 μ l final solutions on the quartz glass plate of cleaning with 2500rpm with microscale sampler; Quartz glass plate is positioned in the measuring cup interior 5ml toluene, the template of parallel column pattern in again measuring cup being appeared with control evaporation rate and then preparation with the cotton sealing;
(2) template with above-mentioned orderly pattern is fixed on the rotatable block substrate 5, then block substrate 5 is sealed on the appropriate location of high vacuum settling chamber 8;
(3) utilize extract system Lodz pump 9 and molecular pump 10 to vacuumize, the vacuum that makes settling chamber 8 is 5 * 10 -5During Pa, in the condensation chamber 6 of gas phase aggregation method cluster beam source, charge into the argon gas of 100Pa at inert gas entrance 11, under this air pressure, produce high density silver atoms gas by atomizer 1 magnetron sputtering in the gas phase aggregation method cluster beam source 7, be grown to serve as nano particle in the argon gas of silver atoms in condensation chamber 6, Nano silver grain is ejected in the high vacuum settling chamber 8 that air pressure is 0.1Pa with the nozzle 2 of argon gas by 2 mm dias, form the Nano silver grain line, it is 10 that the collimater 3 of Nano silver grain line process 2mm diameter enters vacuum -5In the high vacuum settling chamber 8 of Pa, form the nanometer particle beam 4 of high orientation;
(4) block substrate 5 in the rotation high vacuum settling chamber 8, make template substrate surface and nanometer particle beam incidence angle at 45, after the control nanometer particle beam deposits 30 seconds to template substrate, stop deposition, obtain linear ag nano-cluster array of particles as shown in Figure 2, wherein the average diameter of silver-colored cluster is 20 nanometers, and the average headway of silver-colored cluster is 30 nanometers in same linear array.
The preparation method of the nano particle ordered array of embodiment 2 spacings and configuration adjustable and controllable, its preparation process is as follows:
(1) 0.05g polystyrene-polymethyl methacrylate bi-block copolymer is dissolved in the 9.95g chloroform, forming percentage by weight is the final solution of 0.5wt%; Be spun on 25 μ l final solutions on the silicon chip of cleaning with 2800rpm with microscale sampler; Silicon slice placed is placed measuring cup, interior 10ml chloroform, again with measuring cup with foil sealing with the control evaporation rate and then prepare the template of ordered porous stratiform pattern;
(2) template with above-mentioned orderly pattern is fixed on the rotatable block substrate 5, then block substrate 5 is sealed on the appropriate location of high vacuum settling chamber 8;
(3) utilize extract system Lodz pump 9 and molecular pump 10 to vacuumize, the vacuum that makes settling chamber 8 is 7.5 * 10 -5During Pa, in the condensation chamber 6 of gas phase aggregation method cluster beam source, charge into the argon gas of 150Pa at inert gas entrance 11, under this air pressure, produce high-density copper atom gas by atomizer 1 magnetron sputtering in the gas phase aggregation method cluster beam source 7, be grown to serve as nano particle in the argon gas of copper atom in condensation chamber 6, copper nano-particle is ejected in the high vacuum settling chamber 8 that air pressure is 0.15Pa with the nozzle 2 of argon gas by 2 mm dias, form the copper nano-particle line, it is 10 that the collimater 3 of copper nano-particle line process 2mm diameter enters vacuum -5In the high vacuum settling chamber 8 of Pa, form the nanometer particle beam 4 of high orientation;
(4) block substrate 5 in the rotation high vacuum settling chamber 8, make template substrate surface and nanometer particle beam incidence angle at 45, after the control nanometer particle beam deposits 40 seconds to template substrate, stop deposition, then can obtain sequential 2 D copper nanocluster array of particles, wherein the average diameter of copper cluster is 16.5 nanometers, and particle center average headway is 32 nanometers.
The preparation method of the nano particle ordered array of embodiment 3 spacings and configuration adjustable and controllable, its preparation process is as follows:
(1) 0.08g polystyrene-polyisoprene bi-block copolymer is dissolved in the 10g chloroform, forming percentage by weight is the final solution of 1wt%; Be spun on 25 μ l final solutions on the silicon chip of cleaning with 2800rpm with microscale sampler; Silicon slice placed is placed measuring cup, interior 15ml chloroform, again with measuring cup with foil sealing with the control evaporation rate and then prepare the template of ordered porous stratiform pattern;
(2) template with above-mentioned orderly pattern is fixed on the rotatable block substrate 5, then block substrate 5 is sealed on the appropriate location of high vacuum settling chamber 8;
(3) utilize extract system Lodz pump 9 and molecular pump 10 to vacuumize, the vacuum that makes settling chamber 8 is 7.5 * 10 -5During Pa, in the condensation chamber 6 of gas phase aggregation method cluster beam source, charge into the argon gas of 150Pa at inert gas entrance 11, under this air pressure, produce high-density copper atom gas by atomizer 1 magnetron sputtering in the gas phase aggregation method cluster beam source 7, be grown to serve as nano particle in the argon gas of copper atom in condensation chamber 6, copper nano-particle is ejected in the high vacuum settling chamber 8 that air pressure is 0.15Pa with the nozzle 2 of argon gas by 2 mm dias, form the copper nano-particle line, it is 10 that the collimater 3 of copper nano-particle line process 2mm diameter enters vacuum -5In the high vacuum settling chamber 8 of Pa, form the nanometer particle beam 4 of high orientation;
(4) block substrate 5 in the rotation high vacuum settling chamber 8, make template substrate surface and nanometer particle beam incidence angle at 45, after the control nanometer particle beam deposits 45 seconds to template substrate, stop deposition, then can obtain sequential 2 D copper nanocluster array of particles, wherein the average diameter of copper cluster is 20 nanometers, and particle center average headway is 36 nanometers.

Claims (5)

1. the preparation method of the nano particle ordered array of spacing and configuration adjustable and controllable, its preparation process is as follows:
A. block polymer is dissolved in the non-selective solvent, forms the shared percentage by weight of block polymer and be<final solution of 10wt%; Again<50 μ l final solutions are spun on the substrate (5) of cleaning, then substrate (5) is positioned in the measuring cup, in splash into toluene, again measuring cup is sealed to control different evaporation rates and then to prepare the orderly pattern template with different-shape feature with aluminium foil or cotton, it is the template of parallel column pattern in the face, or the template of ordered porous stratiform pattern, described non-selective solvent is toluene or chloroform or methyl alcohol;
B. the template with above-mentioned orderly pattern is fixed on the rotatable block substrate (5), then block substrate (5) is sealed on the appropriate location of high vacuum settling chamber (8);
C. utilize extract system Lodz pump (9) and molecular pump (10) that high vacuum settling chamber (8) are vacuumized, and in the condensation chamber (6) of gas phase aggregation method cluster beam source, charge into inert gas from inert gas entrance (11), under the air pressure that this inert gas produces, atomizer (1) in the gas phase aggregation method cluster beam source (7) produces high density target atom gas by magnetron sputtering or high temperature evaporation, be grown to serve as nano particle in the inert gas of target atom gas in condensation chamber (6), nano particle is ejected into the rough vacuum end that air pressure is the high vacuum settling chamber (8) of 0.1Pa with the aerodynamics nozzle (2) of inert gas by 2 mm dias, form nanometer particle beam, it is 10 that the collimater (3) that nanometer particle beam passes through the 2mm diameter again enters vacuum -4Pa~10 -5The condition of high vacuum degree end of the high vacuum settling chamber (8) of Pa, the nanometer particle beam (4) of formation high orientation; Block substrate (5) in the d rotation high vacuum settling chamber (8), make template substrate surface and nanometer particle beam incidence angle at 45, the control nanometer particle beam is to the time of template substrate deposition, make coverage rate≤100% of nano particle on template substrate, stop deposition, utilize the modification of nano particle to template, the spacing of nano particle, lattice structure parameters such as arrangement configuration are determined by the pattern and the correlated characteristic yardstick of template, thereby form orderly nano-grain array, its particle size is less than 30 nanometers, the template of parallel column pattern in the face of being deposited on then can obtain linear nano particles array; Template when being deposited on ordered porous stratiform pattern then can obtain the sequential 2 D nano particles array.
2. the preparation method of regulatable nano particle ordered array according to claim 1 is characterized in that at the block polymer described in the step a be polystyrene-polybutadiene-polystyrene triblock polymer; Or polystyrene-polymethyl methacrylate bi-block copolymer; Or polystyrene-polyisoprene bi-block copolymer, or polystyrene-polyvinylpyrrolidone bi-block copolymer.
3. the preparation method of regulatable nano particle ordered array according to claim 1 is characterized in that at the substrate described in the step a be quartz glass plate or silicon chip.
4. the preparation method of regulatable nano particle ordered array according to claim 1, it is characterized in that in step c, charging into 50~200Pa inert gas to condensation chamber (6), the size of particle in the described nanometer particle beam is controlled by the air pressure that distance between change atomizer (1) and the aerodynamics nozzle (2) or change charge into inert gas.
5. the preparation method of regulatable nano particle ordered array according to claim 1, it is characterized in that all regulating and control with actual demand at size, spacing and the configuration of the nano particle described in the steps d, the size of nano particle is by the deposition control of nano particle on template; Different block polymer molecular weight is wide with the post in the template of parallel column pattern in the change face by selecting for the nano particle spacing, hole size, hole spacing in the template of intercolumniation or ordered porous stratiform pattern are controlled; The configuration of nano particles array is then controlled by the evaporation rate among the step a.
CNB2006100407418A 2006-05-30 2006-05-30 Method for preparing interval and configuration adjustable nano particle ordered array Expired - Fee Related CN100503423C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2006100407418A CN100503423C (en) 2006-05-30 2006-05-30 Method for preparing interval and configuration adjustable nano particle ordered array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2006100407418A CN100503423C (en) 2006-05-30 2006-05-30 Method for preparing interval and configuration adjustable nano particle ordered array

Publications (2)

Publication Number Publication Date
CN1884042A CN1884042A (en) 2006-12-27
CN100503423C true CN100503423C (en) 2009-06-24

Family

ID=37582368

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100407418A Expired - Fee Related CN100503423C (en) 2006-05-30 2006-05-30 Method for preparing interval and configuration adjustable nano particle ordered array

Country Status (1)

Country Link
CN (1) CN100503423C (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101139081B (en) * 2007-08-10 2010-05-19 中国科学院上海技术物理研究所 Method for preparing nanometer line material with nanometer bore and complex structure thereof
US8668833B2 (en) 2008-05-21 2014-03-11 Globalfoundries Singapore Pte. Ltd. Method of forming a nanostructure
CN101482528B (en) * 2009-01-23 2013-01-02 南京大学 Production method for integrated concentrated nano-particle monolayer film hydrogen sensor
CN102001621A (en) * 2010-09-16 2011-04-06 南京大学 Preparation method of silver nanoparticle lattice with wide plasmon resonant frequency regulation range
CN106800274B (en) * 2017-02-20 2019-01-18 吉林大学 A method of adjusting spacing, density and the optical property of two-dimensional metallic nano particles array
CN110042356B (en) * 2019-05-17 2021-08-10 中国科学院化学研究所 Cluster beam source system with efficient cluster preparation and adjustable size based on magnetron sputtering
CN110116217B (en) * 2019-05-28 2022-03-11 郑州大学 Method for constructing two-dimensional gold nanoparticle pattern

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002241929A (en) * 2000-08-02 2002-08-28 Sony Corp Method for producing luminescent material, luminescent material and display device
EP1486583A1 (en) * 2002-02-26 2004-12-15 Japan Science and Technology Agency Method and device for manufacturing semiconductor or insulator/metallic laminar composite cluster
CN1697202A (en) * 2005-06-23 2005-11-16 上海交通大学 Method for preparing Nano thin film in level of semiconductor photovoltaic device
EP1390560B1 (en) * 2001-05-04 2006-01-11 Avery Dennison Corporation Process for making platelets

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002241929A (en) * 2000-08-02 2002-08-28 Sony Corp Method for producing luminescent material, luminescent material and display device
EP1390560B1 (en) * 2001-05-04 2006-01-11 Avery Dennison Corporation Process for making platelets
EP1486583A1 (en) * 2002-02-26 2004-12-15 Japan Science and Technology Agency Method and device for manufacturing semiconductor or insulator/metallic laminar composite cluster
CN1697202A (en) * 2005-06-23 2005-11-16 上海交通大学 Method for preparing Nano thin film in level of semiconductor photovoltaic device

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
模板技术制备一维纳米纤维及其阵列. 杨正龙,牛忠伟,杨振忠.研究快讯,第33卷第7期. 2004
模板技术制备一维纳米纤维及其阵列. 杨正龙,牛忠伟,杨振忠.研究快讯,第33卷第7期. 2004 *
真空沉积法制备InSb纳米颗粒. 孙全,何焰兰,吕志辉,黄水花.应用光学,第26卷第1期. 2005
真空沉积法制备InSb纳米颗粒. 孙全,何焰兰,吕志辉,黄水花.应用光学,第26卷第1期. 2005 *

Also Published As

Publication number Publication date
CN1884042A (en) 2006-12-27

Similar Documents

Publication Publication Date Title
CN100503423C (en) Method for preparing interval and configuration adjustable nano particle ordered array
Abid et al. Synthesis of nanomaterials using various top-down and bottom-up approaches, influencing factors, advantages, and disadvantages: A review
Jaworek et al. Electrospray application to powder production and surface coating
Jaworek Electrospray droplet sources for thin film deposition
Roth A deep look into the spray coating process in real-time—the crucial role of x-rays
Ukoba et al. Thin films, atomic layer deposition, and 3D Printing: demystifying the concepts and their relevance in industry 4.0
Song et al. Formation of silver nanoshells on latex spheres
Caricato et al. MAPLE deposition of nanomaterials
Yan et al. In-situ formation of ZnO nanobelts and metallic Zn nanobelts and nanodisks
Kylián et al. Plasma-assisted gas-phase aggregation of clusters for functional nanomaterials
CN109612975A (en) A kind of surface enhanced Raman substrate and preparation method thereof
CN103030097A (en) Method for preparing wafer level low-dimensional nanostructures based on electrostatic field self-focusing
Rosenthal et al. Formation of magnetic nanocolumns during vapor phase deposition of a metal-polymer nanocomposite: Experiments and kinetic Monte Carlo simulations
JP5728119B1 (en) Simultaneous production method of different kinds of nanoparticles
JP4340433B2 (en) Nozzle for ultrafine ink jet printing and method for producing the same
Penyaz’kov et al. Low-temperature synthesis of metal oxide nanoparticles during evaporation of femtoliter drops of aqueous solutions
Okazaki et al. Fabrication of nanoframe structures by site-selective assembly of gold nanoparticles on silver cubes in an ionic liquid
Rajab et al. Controlling shape and spatial organization of silver crystals by site-selective chemical growth method for improving surface enhanced Raman scattering activity
CN1663660A (en) Preparation of multicomponent nano material by ultrasonic spray technology
CN102963124B (en) Gas jet printing device and jet printing method
Xu et al. Silicon nanopillars with ZnO nanorods by nanosphere lithography on a piezoresistive microcantilever
Zhang et al. Surfaces with modified morphology and wettability arrangement: a potential medium for water harvesting in desertification areas
Rennen et al. Application Domains of< 20 nm Particles and the Role of the Spark Discharge Generator
CN109898057B (en) Metallic glass film with surface Raman enhancement effect, preparation method and application thereof
KR101214051B1 (en) Manufacture method of CNT-Metal homogeneous film for electron field emission & Aerosol deposition device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090624

Termination date: 20130530