CN100497748C - 电解抛光组件以及对导电层执行电解抛光的方法 - Google Patents

电解抛光组件以及对导电层执行电解抛光的方法 Download PDF

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Publication number
CN100497748C
CN100497748C CNB028225864A CN02822586A CN100497748C CN 100497748 C CN100497748 C CN 100497748C CN B028225864 A CNB028225864 A CN B028225864A CN 02822586 A CN02822586 A CN 02822586A CN 100497748 C CN100497748 C CN 100497748C
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CN
China
Prior art keywords
wafer
nozzle
sheath
chuck
equipment according
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CNB028225864A
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English (en)
Chinese (zh)
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CN1585835A (zh
Inventor
王晖
易培豪
穆哈默德·阿夫南
沃哈·努
费利克斯·古特曼
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ACM Research Inc
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ACM Research Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H3/00—Electrochemical machining, i.e. removing metal by passing current between an electrode and a workpiece in the presence of an electrolyte
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7602—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CNB028225864A 2001-11-13 2002-11-13 电解抛光组件以及对导电层执行电解抛光的方法 Expired - Lifetime CN100497748C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US33241701P 2001-11-13 2001-11-13
US60/332,417 2001-11-13
US37256702P 2002-04-14 2002-04-14
US60/372,567 2002-04-14

Publications (2)

Publication Number Publication Date
CN1585835A CN1585835A (zh) 2005-02-23
CN100497748C true CN100497748C (zh) 2009-06-10

Family

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Family Applications (1)

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CNB028225864A Expired - Lifetime CN100497748C (zh) 2001-11-13 2002-11-13 电解抛光组件以及对导电层执行电解抛光的方法

Country Status (8)

Country Link
US (1) US20040238481A1 (https=)
EP (1) EP1446514A4 (https=)
JP (5) JP2005509746A (https=)
KR (1) KR20050044404A (https=)
CN (1) CN100497748C (https=)
CA (1) CA2464423A1 (https=)
TW (1) TWI275452B (https=)
WO (1) WO2003042433A1 (https=)

Cited By (2)

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CN105210181A (zh) * 2013-05-09 2015-12-30 盛美半导体设备（上海）有限公司 电镀和/或电抛光硅片的装置及方法
TWI647343B (zh) * 2014-05-16 2019-01-11 盛美半導體設備（上海）有限公司 Apparatus and method for electroplating or electropolishing bracts

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US7205166B2 (en) * 2002-06-28 2007-04-17 Lam Research Corporation Method and apparatus of arrayed, clustered or coupled eddy current sensor configuration for measuring conductive film properties
KR101151456B1 (ko) * 2002-07-22 2012-06-04 에이씨엠 리서치, 인코포레이티드 두께 측정을 이용한 적정 전해연마 및 장벽층과 희생층의제거방법 및 시스템
JP2005082843A (ja) * 2003-09-05 2005-03-31 Ebara Corp 電解液管理方法及び管理装置
JP2005120464A (ja) * 2003-09-26 2005-05-12 Ebara Corp 電解加工装置及び電解加工方法
US7224456B1 (en) * 2004-06-02 2007-05-29 Advanced Micro Devices, Inc. In-situ defect monitor and control system for immersion medium in immersion lithography
US20070062815A1 (en) * 2005-09-19 2007-03-22 Applied Materials, Inc. Method for stabilized polishing process
US7837850B2 (en) 2005-09-28 2010-11-23 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating systems and methods
US20070181441A1 (en) * 2005-10-14 2007-08-09 Applied Materials, Inc. Method and apparatus for electropolishing
JP5012252B2 (ja) 2007-06-25 2012-08-29 ヤマハ株式会社 磁気データ処理装置、方法およびプログラム
DE102007044091A1 (de) * 2007-09-14 2009-03-19 Extrude Hone Gmbh Verfahren und Vorrichtung zur elektochemischen Bearbeitung
US8496511B2 (en) * 2010-07-15 2013-07-30 3M Innovative Properties Company Cathodically-protected pad conditioner and method of use
US9255339B2 (en) * 2011-09-19 2016-02-09 Fei Company Localized, in-vacuum modification of small structures
KR101300325B1 (ko) * 2011-12-21 2013-08-28 삼성전기주식회사 기판 도금 장치 및 그 제어 방법
CN102601471B (zh) * 2012-03-28 2013-07-24 华南理工大学 一种空间曲线啮合齿轮机构的精加工方法
CN103590092B (zh) * 2012-08-16 2017-05-10 盛美半导体设备（上海）有限公司 一种电化学抛光/电镀装置及方法
TWI512851B (zh) * 2012-09-01 2015-12-11 萬國半導體股份有限公司 帶有厚底部基座的晶圓級封裝器件及其製備方法
CN105088328B (zh) * 2014-05-07 2018-11-06 盛美半导体设备（上海）有限公司 电化学抛光供液装置
CN105316755B (zh) * 2014-07-29 2019-06-25 盛美半导体设备（上海）有限公司 电化学抛光设备
CN105312999A (zh) * 2014-07-29 2016-02-10 盛美半导体设备（上海）有限公司 无应力抛光设备及其工艺腔体
CN104241159B (zh) * 2014-09-19 2018-04-03 中海阳能源集团股份有限公司 太阳能发电支架液体镀层及测量一体装置
CN105448817B (zh) * 2014-09-29 2020-05-19 盛美半导体设备(上海)股份有限公司 一种电化学抛光金属互连晶圆结构的方法
CN106567130A (zh) * 2015-10-10 2017-04-19 盛美半导体设备（上海）有限公司 一种改善晶圆粗糙度的方法
CN105780101B (zh) * 2016-01-27 2018-06-26 杨继芳 一种新型电解抛光设备
CN105742213B (zh) * 2016-03-07 2019-03-12 京东方科技集团股份有限公司 湿法刻蚀设备及湿法刻蚀方法
US11110661B2 (en) * 2016-11-15 2021-09-07 Postprocess Technologies, Inc. Self-modifying process for rotational support structure removal in 3D printed parts using calibrated resonant frequency
CN106352782A (zh) * 2016-11-24 2017-01-25 中国航空工业集团公司金城南京机电液压工程研究中心 一种高温电涡流传感器及制作方法
CN106625033B (zh) * 2016-12-09 2018-12-18 天津津航技术物理研究所 一种确定单点金刚石车削刀痕抛光去除特性的方法
JP6431128B2 (ja) * 2017-05-15 2018-11-28 エーシーエム リサーチ （シャンハイ） インコーポレーテッド ウェハのメッキおよび／または研磨のための装置および方法
CN109423688B (zh) * 2017-08-31 2022-03-22 深圳市水佳鑫科技有限公司 电化学处理液循环系统及设备
CN111250805A (zh) * 2020-03-20 2020-06-09 南京航空航天大学 金属粗糙表面的飞行式电解铣削整平方法
CN111230727B (zh) * 2020-03-28 2024-08-02 苏州赛森电子科技有限公司 一种真空镀膜工艺中硅片单面抛光装置及单面抛光方法
CN113782430B (zh) * 2020-06-09 2025-09-12 盛美半导体设备(上海)股份有限公司 去除阻挡层的方法
CN111958478B (zh) * 2020-07-27 2024-06-18 浙江工业大学 基于氧化膜状态主动控制的轴承滚子elid研磨装置
JP7678125B2 (ja) 2021-03-04 2025-05-15 アプライド マテリアルズ インコーポレイテッド 化学機械研磨における絶縁流体ライン
CN114951858B (zh) * 2022-05-17 2024-05-10 哈尔滨工业大学 一种光纤激光与管电极电解复合用光电液耦合装置
CN117299666B (zh) * 2022-06-23 2025-10-17 盛美半导体设备(上海)股份有限公司 基板处理设备
GB202308117D0 (en) * 2023-05-31 2023-07-12 Holdson Ltd System and method for electrolyte flow control in electrochemical polishing apparatus

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US4304641A (en) * 1980-11-24 1981-12-08 International Business Machines Corporation Rotary electroplating cell with controlled current distribution
US5421987A (en) * 1993-08-30 1995-06-06 Tzanavaras; George Precision high rate electroplating cell and method
US5567300A (en) * 1994-09-02 1996-10-22 Ibm Corporation Electrochemical metal removal technique for planarization of surfaces
CN1193187A (zh) * 1997-03-12 1998-09-16 三菱电机株式会社 引线框的加工装置和加工方法
CN1206933A (zh) * 1997-07-25 1999-02-03 三星电子株式会社 光刻胶喷涂的装置及其方法
US6039854A (en) * 1997-01-13 2000-03-21 Vanguad International Semiconductor Corporation Substrate clamp design for minimizing substrate to clamp sticking during thermal processing of thermally flowable layers

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US4304641A (en) * 1980-11-24 1981-12-08 International Business Machines Corporation Rotary electroplating cell with controlled current distribution
US5421987A (en) * 1993-08-30 1995-06-06 Tzanavaras; George Precision high rate electroplating cell and method
US5567300A (en) * 1994-09-02 1996-10-22 Ibm Corporation Electrochemical metal removal technique for planarization of surfaces
US6039854A (en) * 1997-01-13 2000-03-21 Vanguad International Semiconductor Corporation Substrate clamp design for minimizing substrate to clamp sticking during thermal processing of thermally flowable layers
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105210181A (zh) * 2013-05-09 2015-12-30 盛美半导体设备（上海）有限公司 电镀和/或电抛光硅片的装置及方法
CN105210181B (zh) * 2013-05-09 2017-12-01 盛美半导体设备（上海）有限公司 电镀和/或电抛光硅片的装置及方法
US10227705B2 (en) 2013-05-09 2019-03-12 Acm Research (Shanghai) Inc. Apparatus and method for plating and/or polishing wafer
TWI647343B (zh) * 2014-05-16 2019-01-11 盛美半導體設備（上海）有限公司 Apparatus and method for electroplating or electropolishing bracts

Also Published As

Publication number Publication date
EP1446514A1 (en) 2004-08-18
TWI275452B (en) 2007-03-11
KR20050044404A (ko) 2005-05-12
EP1446514A4 (en) 2007-11-28
CN1585835A (zh) 2005-02-23
JP2007016320A (ja) 2007-01-25
CA2464423A1 (en) 2003-05-22
US20040238481A1 (en) 2004-12-02
JP2006316352A (ja) 2006-11-24
JP2005509746A (ja) 2005-04-14
JP2007051376A (ja) 2007-03-01
JP2006291361A (ja) 2006-10-26
TW200300376A (en) 2003-06-01
WO2003042433A1 (en) 2003-05-22

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