CN100495001C - 可观测离子束造成的表面损伤的tem样片的制备方法 - Google Patents
可观测离子束造成的表面损伤的tem样片的制备方法 Download PDFInfo
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- CN100495001C CN100495001C CN 200310122961 CN200310122961A CN100495001C CN 100495001 C CN100495001 C CN 100495001C CN 200310122961 CN200310122961 CN 200310122961 CN 200310122961 A CN200310122961 A CN 200310122961A CN 100495001 C CN100495001 C CN 100495001C
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- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000006378 damage Effects 0.000 title claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 238000002360 preparation method Methods 0.000 claims description 18
- 230000008859 change Effects 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 abstract description 14
- 230000008569 process Effects 0.000 abstract description 7
- 239000013078 crystal Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 208000027418 Wounds and injury Diseases 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 208000014674 injury Diseases 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200310122961 CN100495001C (zh) | 2003-12-30 | 2003-12-30 | 可观测离子束造成的表面损伤的tem样片的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN 200310122961 CN100495001C (zh) | 2003-12-30 | 2003-12-30 | 可观测离子束造成的表面损伤的tem样片的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1635365A CN1635365A (zh) | 2005-07-06 |
CN100495001C true CN100495001C (zh) | 2009-06-03 |
Family
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Application Number | Title | Priority Date | Filing Date |
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CN 200310122961 Expired - Lifetime CN100495001C (zh) | 2003-12-30 | 2003-12-30 | 可观测离子束造成的表面损伤的tem样片的制备方法 |
Country Status (1)
Country | Link |
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CN (1) | CN100495001C (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100449722C (zh) * | 2005-12-08 | 2009-01-07 | 中芯国际集成电路制造(上海)有限公司 | 一种测定深沟槽失效深度的方法 |
CN101105463B (zh) * | 2006-07-10 | 2010-12-22 | 中芯国际集成电路制造(上海)有限公司 | Tem样品最小有效厚度的检测方法 |
JP5362236B2 (ja) * | 2007-03-12 | 2013-12-11 | 株式会社日立ハイテクサイエンス | 試料加工・観察装置及び断面加工・観察方法 |
CN102109425B (zh) * | 2009-12-23 | 2012-07-25 | 中芯国际集成电路制造(上海)有限公司 | 提高透射电子显微镜测试样品研磨效率的方法 |
CN102401758A (zh) * | 2010-09-17 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | Tem样品制造方法 |
CN102410947B (zh) * | 2010-09-19 | 2013-03-06 | 中芯国际集成电路制造(上海)有限公司 | Tem样品的制备方法 |
WO2012103534A1 (en) * | 2011-01-28 | 2012-08-02 | Fei Company | Tem sample preparation |
CN102495089B (zh) * | 2011-12-14 | 2013-07-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | 半导体材料测量装置及原位测量界面缺陷分布的方法 |
CN103698170B (zh) * | 2012-09-27 | 2016-09-28 | 中芯国际集成电路制造(上海)有限公司 | Tem样品的制备方法 |
CN104155156B (zh) * | 2013-05-14 | 2017-04-19 | 中芯国际集成电路制造(上海)有限公司 | Tem平面样品的制备方法 |
CN103760177B (zh) * | 2014-01-03 | 2016-05-25 | 武汉新芯集成电路制造有限公司 | 一种基于三维tem样品进行缺陷分析的方法 |
CN104792585B (zh) * | 2014-01-22 | 2017-05-17 | 中芯国际集成电路制造(上海)有限公司 | 一种tem样品的制备方法 |
CN104155319A (zh) * | 2014-07-25 | 2014-11-19 | 胜科纳米(苏州)有限公司 | 利用fib切割以实现纳米级样品立体观测的方法 |
CN104697836B (zh) * | 2015-03-30 | 2018-04-06 | 上海华力微电子有限公司 | 一种tem样品制备方法 |
CN106908290B (zh) * | 2017-02-16 | 2019-10-11 | 中国科学院合肥物质科学研究院 | 全息观测透射电镜试样的制备方法 |
CN110954565B (zh) * | 2019-12-25 | 2020-10-02 | 哈尔滨工业大学 | 一种利用聚焦离子束进行切割制备非均质材料透射样品的方法 |
CN114354664A (zh) * | 2022-01-10 | 2022-04-15 | 长江存储科技有限责任公司 | 使用fib制备截面样品的方法和截面样品的观察方法 |
-
2003
- 2003-12-30 CN CN 200310122961 patent/CN100495001C/zh not_active Expired - Lifetime
Non-Patent Citations (4)
Title |
---|
A review of focused ion beam milling techniques for TEM specimen preparation. L.A.Giannuzzi, F.A.Stevie.Micron,Vol.30 . 1999 |
A review of focused ion beam milling techniques for TEM specimen preparation. L.A.Giannuzzi, F.A.Stevie.Micron,Vol.30. 1999 * |
Surface damage formation during ion-beam thinning of samples for transmission electron microscopy. J.P. McCaffrey, M.W. Phaneuf, L.D. Madsen.Ultramicroscopy,Vol.87 . 2001 |
Surface damage formation during ion-beam thinning of samples for transmission electron microscopy. J.P. McCaffrey, M.W. Phaneuf, L.D. Madsen.Ultramicroscopy,Vol.87. 2001 * |
Also Published As
Publication number | Publication date |
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CN1635365A (zh) | 2005-07-06 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111202 |
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Effective date of registration: 20111202 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corp. Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. |
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Granted publication date: 20090603 |
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