CN100492452C - Color active organic electroluminescent assembly, its production and electronic device - Google Patents

Color active organic electroluminescent assembly, its production and electronic device Download PDF

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CN100492452C
CN100492452C CN 200410091605 CN200410091605A CN100492452C CN 100492452 C CN100492452 C CN 100492452C CN 200410091605 CN200410091605 CN 200410091605 CN 200410091605 A CN200410091605 A CN 200410091605A CN 100492452 C CN100492452 C CN 100492452C
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color
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organic electroluminescent
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CN1779744A (en
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蔡耀铭
薛玮杰
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统宝光电股份有限公司
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Abstract

一种全彩化主动式有机电激发光显示器及其制造方法。 An all-color of light has an active display and a method of manufacturing the organic electroluminescence. 该全彩化主动式有机电激发光显示器包含一基板;多个多晶硅薄膜晶体管,形成于该基板之上;一缓冲层,形成于薄膜晶体管外的基板之上;一彩色滤光片形成于缓冲层之上;一平坦层,形成于彩色滤光层上;一第一电极形成于平坦层之上;一有机发光二极管材料层形成于第一电极上;以及一第二电极,形成于有机发光二极管材料层之上。 The full-color active-type organic light display comprises a substrate; a plurality of polysilicon thin film transistors formed over the substrate; a buffer layer formed on the substrate outside the thin film transistor; a color filter is formed on the buffer top of the layer; a planarization layer, is formed on the color filter layer; a first electrode formed over the planar layer; an organic light emitting diode material layer formed on the first electrode; and a second electrode formed on the organic light emitting diode material layer above. 其中,平坦层是以一低温制程技术所形成。 Wherein the planarization layer is formed by a low temperature process techniques.

Description

全彩化主动式有机电激发光组件、其制造方法及电子装置 Full color organic light active component, and a method of manufacturing the electronic device

技术领域 FIELD

本发明是有关于一种主动式有机电激发光组件及其制造方法,特别是有关于一种全彩化主动式有机电激发光组件及其制造方法。 The present invention relates to an active optical module and a manufacturing method there electromechanical excitation, more particularly relates to a full color active optical module and a manufacturing method have the organic electroluminescence.

背景技术 Background technique

目前有机电激发光组件的全彩化方式有许多种, 一般而言,由以三色发 There are full-color mode electromechanical excitation light There are many components, in general, to a three-color hair

其中,所谓的色彩转换层法,是利用一白色有机电激发光二极管数组搭配红色、蓝色及绿色的彩色滤光片,再以一电压驱动该有机电激发光二极管数组后,即产生全彩的效果。 Wherein the method called color conversion layer, using a white organic electroluminescent light emitting diode array with a red, blue and green color filters, and then after a driving voltage to the organic electroluminescent light emitting diode array, i.e. generating full color Effect.

请参照图1,是显示一种现有全彩化主动式有才几电激发光组件的剖面结构 Referring to FIG. 1, it is a cross-sectional structure of the excitation light talented several electrical components of a conventional full-color active

示意图,该全彩化主动式有机电激发光组件10包含一基板(active matrix substrate) 12、多个薄膜晶体管20、红蓝绿三色滤光片32、 34、 36及多个白色有机发光二极管40。 Schematic illustration of a full color active organic light assembly 10 comprises a 12, a plurality of thin film transistor substrate (active matrix substrate) 20, red blue and green three color filters 32, 34, 36 and a plurality of white organic light emitting diode 40. 其中,该白色有机发光二极管40具有一IT0电极42 形成于该彩色滤光片32、 34、 36上,并与该薄膜晶体管20的一漏极22电性连结。 Wherein the white organic light emitting diode 40 having a IT0 electrode 42 is formed on the color filters 32, 34, 36, 22 and a drain electrode electrically connected to the thin film transistor 20. 该彩色滤光片32、 34、 36是将经过的光分别转换成红、蓝、绿三色光, 以使显示器全彩化。 The color filters 32, 34, 36 will pass light respectively into red, blue, and green color light, so that full-color display. 然而,请参照图2,为图1的区域A的剖面示意图,由于该主动式有机电激发光组件其像素结构的彩色滤光层32、 34、 36的表面37有一定粗糙度(Ra 大约在20nm左右),若直接于此等彩色滤光层32、 34、 36的表面上形成一ITO 电极层42作为有机发光二极管40的阳极,则此ITO电极层42的表面平坦度将受彩色滤光层的影响,亦会形成Ra大约在20nm左右的粗糙表面43,不仅无法达到有机电激发光组件对电极表面平坦度的要求(Ra —般需小于10nm), 且容易导致尖端放电效应,造成有机组件的短路及漏电流的产生,进而影响有机激发光组件的效率及寿命。 However, referring to FIG 2, is a schematic sectional view of region A of FIG. 1, since the organic electroluminescent active layer which color filter pixel structure of optical module 32, the surface 34, 36, 37 have a surface roughness (Ra about about 20nm), and the like when the color filter layer directly thereto 32, 34, an ITO electrode is formed on the surface 36 of layer 42 as the anode of the organic light emitting diode 40, the flatness of the surface of this ITO electrode layer 42 will be subject to a color filter Effect layers, also formed on the roughened surface Ra is about about 20nm 43, not only can not achieve organic light assembly of claim electrode surface flatness (Ra - generally required less than 10 nm), and the discharge effect can easily lead tip, causing the organic a short circuit and leakage current component, thereby affecting the excitation efficiency and lifetime of the organic light components.

此外,由于一般彩色滤光层的材质为有机染料或是树脂,其耐热温度的上限约为350°C。 Further, since the color filter layer material generally is an organic dye or resin, the upper limit of the heat resistance temperature of about 350 ° C. 因此若利用一具有较高操作温度(400。C)的镀膜方式,例如化学气相沉积法(CVD),形成一ITO导电层于该彩色滤光层上时,过高的温度将使得该彩色滤光层的材质受热分解或扩胀,导致该彩色滤光层的损伤。 Therefore, when using a higher operating temperatures with (400.C) coating manner, such as chemical vapor deposition (CVD), an ITO is formed on the conductive layer when the color filter layer, too high a temperature will cause the color filters material heat decomposition or the light absorbing layer dilatation, resulting in damage to the color filter layer.

为了符合目前市场上的需求,全彩化的主动式有机电激发光组件仍有一些问题需要克服。 In order to meet the demand on the market, full-color active-type organic light components are still some problems to overcome. 因此发展出高效能且稳定的全彩化有机发光显示器的整合制程与结构是有机发光显示器技术的一项重要课题。 Thus the integration process and to develop a high performance and stable structure of full color organic light emitting display is an organic light emitting display important subject technology.

发明内容 SUMMARY

有鉴于此,为了解决上述问题,本发明的主要目的在于,在不损害彩色滤光层的前提下,提供一平坦层作为该透明电极层的载层,以解决因透明导电层其表面平均粗糙度过高所导致的发光效率下降及漏电流等问题,进而达到全彩化有机电激发光显示器效能的提升。 In view of this, in order to solve the above problems, the main object of the present invention, without damage to the color filter layer, providing a planar layer as a carrier layer of the transparent electrode layer, a transparent conductive layer in order to address the average roughness of its surface too high emission efficiency drop caused by current leakage and other issues, and then to have a full color organic light-emitting display improve performance.

此外,本发明的另一目的为提供一种全彩化主动式有机电激发光组件的制造方法,其是以低温制程方式形成一平坦层于该彩色滤光层之上,以形成本发明所述的高效能全彩化主动式有机电激发光组件。 Further, another object of the present invention is to provide a full color active method for producing organic electroluminescent light component, which is a low temperature process is formed planarization layer on the color filter layer, to form the present invention said high-performance full-color organic electroluminescent active component.

再者,本发明的又一目的是提供一种电子装置,其包含上述的全彩化主 Moreover, a further object of the present invention is to provide an electronic device, comprising the above-described full-color master

动式有机电激发光组件。 Acting organic light assembly.

为达成本发明的上述目的,本发明所述的全彩化主动式有机电激发光组件,其包含有多个数组的像素区域形成于一基板上,其中每一像素区域是包含有一緩沖层、 一薄膜晶体管、 一有机发光二极管、 一平坦层及一彩色滤光层,其中有机发光二极管是包含有一第一电极与薄膜晶体管电性连结、 一有机电激发光层与一第二电极。 To achieve the above object of the present invention, the full color of the present invention, the active organic electroluminescent assembly comprising a plurality of arrays of pixel areas formed on a substrate, wherein each pixel region comprising a buffer layer, a thin film transistor, an organic light emitting diode, a planarization layer, and a color filter layer, wherein the organic light emitting diode comprising a first electrode electrically connected to the thin film transistor, an organic electroluminescent layer and a second electrode. 薄膜晶体管及緩冲层是形成于基板上,且彩色滤光层形成于緩冲层上。 The thin film transistor and the buffer layer is formed on the substrate, and a color filter layer formed on the buffer layer. 平坦层是形成于緩冲层上用来作为第一电极的栽层。 It is formed on the planarization layer used as the first electrode layer planted on the buffer layer. 而第一电极、有机电激发光层与第二电极是依序形成于平坦层上。 And the first electrode, the organic electroluminescent layer and the second electrode are sequentially formed on the planarization layer. 此外,平坦层可以一低温制程技术所形成。 Further, the planarization layer may be formed of a low-temperature process techniques.

根据本发明所述的全彩化主动式有机电激发光组件,其中薄膜晶体管是包含有一栅极绝缘层、 一栅极、 一源极及一漏极,且栅极绝缘层是形成于栅极上,并与緩冲层相连。 The full-color according to the present invention, the active organic light assembly, wherein the thin film transistor comprising a gate insulating layer, a gate, a source and a drain, and a gate insulating layer is formed on the gate on and connected to the buffer layer.

根据本发明所述的全彩化主动式有机电激发光组件,更包括一图形化的绝缘层形成于第一极电极上,以露出位于彩色滤光层上方的第一极电极。 The full-color according to the present invention, the active organic light assembly, further comprising a patterned insulating layer formed on the first electrode, to expose the first electrode is located above the color filter layer.

根据本发明所述的全彩化主动式有机电激发光组件,其中平坦层的表面 The full-color according to the present invention, the active organic light component, wherein the surface of the flat layer

粗糙度是不大于lOnm。 Roughness of not greater than lOnm.

为达本发明所述的另一目的,本发明亦提供一种全彩化主动式有机电激发光组件的制造方式。 To achieve another object of the present invention, the present invention also provides a full-color organic electroluminescent active optical module manufacturing methods. 首先,提供一基板,并形成多个薄膜晶体管及一緩冲层于基板之上,其中薄膜晶体管是包含有一栅极绝缘层、 一栅极、 一源极及一漏极。 First, a substrate, and forming a plurality of thin film transistors and a buffer layer on the substrate, wherein the thin film transistor comprising a gate insulating layer, a gate, a source and a drain. 接着,形成一彩色滤光层于緩冲层上。 Next, a color filter layer formed on the buffer layer. 接着,以一低温制程技术形成一平坦层于彩色滤光层上。 Next, a low temperature process to form a planar layer technique on the color filter layer. 最后,形成一第一;f及电极于平坦层上,并与薄膜晶体管电性连结。 Finally, a first form; F and an electrode on the planar layer, and electrically connected to the thin film transistor.

程技术具有一操作温度,上述的操作温度是不大于350°C Process technology has an operating temperature above the operating temperature no greater than 350 ° C

根据本发明所述的全彩化主动式有机电激发光组件的制造方式,在形成第一电极于平坦层后,更包括形成一图形化的绝缘层于第一电极上以露出位于该彩色滤光层上方的第一极电极。 The full-color active according to the present invention for producing organic electroluminescent an optical assembly, a first electrode formed on the planarization layer, further comprising forming a patterned insulating layer on the color filter is located on the first electrode to expose a first electrode over the light absorbing layer.

为达本发明所迷的另一目的,本发明亦提供一种电子装置,其包括一本发明所述的全彩化主动式有机电激发光组件,以及一电源供应单元,其中有机电激发光组件耦接至上述显示系统,用以供电至上述全彩化主动式有机电激发光组件。 To achieve another object of the present invention, the fan, the present invention also provides an electronic device comprising a full color according to the present invention, the active organic light assembly, and a power supply unit, wherein the organic light- assembly coupled to the display system for providing power to the above-described full-color organic electroluminescent active component.

附图说明 BRIEF DESCRIPTION

图1是显示现有全彩化主动式有机电激发光组件的剖面示意图。 FIG 1 is a conventional full color organic active excitation light has a cross-sectional schematic assembly. 图2是显示图1的区域A的剖面放大示意图。 FIG 2 is a cross-sectional area A 1 of the enlarged view of FIG.

图3是显示根据本发明所迷的全彩化主动式有机电激发光组件的一较佳实施例的平面扭无要示意图。 Figure 3 is a full-color display device according to the present invention as an active fan has a flat electro-luminescent preferred embodiment of the assembly of the torsion-free to FIG.

图4a至图4e是一系列对应于图3B-B,切线的剖面结构示意图,显示根据本发明所述全彩化主动式有机电激发光组件的一较佳实施例的制作流程。 Figures 4a to 4e are a series of corresponding to FIG. 3B-B, a schematic cross-sectional structure of the tangent, the display according to the invention with a full-color active production process according to a preferred embodiment of the organic light assembly.

图5是显示图4e的区域C的剖面放大示意图。 FIG 5 is a cross-sectional area C of FIG. 4e enlarged view.

图6为具有本发明的全彩化主动式有机电激发光组件的电子装置的示意图。 FIG. 6 is a full-color with the present invention, the active electronic device with a schematic view of the organic components of the excitation light.

符号说明:10〜有机电激发光组件;12~基板;20〜薄膜晶体管;32~红色彩色滤光层;34-绿色彩色滤光层;36〜蓝色彩色滤光层;37~彩色滤光层的上表面;40~白光有机发光二极管;42-IT0电极;43 ~ ITO电极的上表面;A-区域A。 Description of Symbols: There 10~ electroluminescent component; 12 to a substrate; a thin film transistor 20~; 32 ~ red color filter layer; 34- green color filter layer; 36~ blue color filter layer; 37 ~ color filter an upper surface layer; white organic light emitting diode 40 ~; 42-IT0 electrode; ~ 43 of the upper surface of the ITO electrode; A- region A.

100~有机电激发光组件的像素区域;101、 107~薄膜晶体管;102 ~资料线;103~电容;105~有机发光二极管;110〜•; 112~緩冲层;113 ~ 彩色滤光层预定区;114~彩色滤光层;115~彩色滤光层的上表面;116 ~ 平坦层;117~平坦层的上表面;118~透明电极;119 ~透明电极的上表面; 121~栅极;123~介电层;124~半导体层;125 ~源极;126 ~漏极;140 ~ 绝缘层;142~有机电激发光层;144-金属电极;200 ~电子装置;210 ~外壳;300〜主动式有机电激发光组件;400 ~电源供应单元;BB,〜延BB,的剖面线;C~区域C。 ~ 100 pixel region of the organic electroluminescent assembly; 101, 107 to the thin film transistor; data lines 102 ~; ~ capacitors 103; 105 ~ organic light emitting diode; 110~ •; 112 ~ buffer layer; color filter layer 113 to a predetermined region; the color filter layer 114 ~; ~ 115 on the surface of the color filter layer; ~ planarization layer 116; 117 to the upper surface of the flat layer; transparent electrode 118 ~; ~ 119 on the surface of the transparent electrode; 121 to a gate; The dielectric layer 123 ~; ~ semiconductor layer 124; source ~ 125; 126 ~ drain; ~ insulating layer 140; 142 ~ organic electroluminescent layer; 144- metal electrode; electronic device 200 ~; 210 ~ a housing; 300~ active organic electroluminescent assembly; 400 to the power supply unit; BB, ~ extension BB, section line; C ~ region C.

具体实施方式 Detailed ways

为使本发明的上述目的、特征能更明显易懂,下文特举较佳实施例,并配合所附图式,作详细说明如下: For the above-described object of the present invention, features can be more fully understood by reading the following preferred embodiments and accompanying figures, described in detail below:

一种全彩化主动式有机电激发光组件,是制作单色发光像素结构,透过彩色滤光片过滤而得到红、蓝、绿三种光色。 One kind of full-color organic electroluminescent active component, is the production of monochrome pixel structure, the color filter obtained was filtered through red, blue and green light color. 此外,本发明可在不损害该彩色滤光片的前提下,提供一平坦层作为该透明电极层的载层,以解决因透明导电层其表面平均粗糙度过高所导致的发光效率下降及漏电流等问题。 Further, the present invention can be made without prejudice to the color filter, there is provided a planar layer as a carrier layer of the transparent electrode layer, light emission efficiency due to address a transparent conductive layer whose average surface roughness and degradation caused by excessive leakage current problems. 以下 the following

例,兹配合附图详细说明如下:实施例 Example hereby described in detail with the accompanying drawings as follows: Example

请参照图3,是显示符合本发明所述的全彩化主动式有机电激发光组件的一较佳实施例的像素区域平面概要示意图,该像素区域100主要包含有一薄膜晶体管101耦接于一沿Y方向延伸的数据线102、 一电容储存器103、 一有机发光二极管105及另一薄膜晶体管107,其中该薄膜晶体管107耦接于该有机发光二极管105。 Referring to FIG. 3, is a full-color line with the present invention, the active pixel region a preferred embodiment of the planar electromechanical excitation light component schematic diagram, the pixel region 100 mainly includes a thin film transistor 101 is coupled to a a data line 102 extending in the Y direction, a storage capacitor 103, an organic light emitting diode 105 thin film transistor 107 and the other, wherein the thin film transistor 107 is coupled to the organic light emitting diode 105. 图4a至图4e为一系列对应于图3B-B,切线的像素区域剖面结构示意图,是用来说明本发明所述的主动式有机电激发光组件的一较佳实施例的制造流程。 Figures 4a to 4e correspond to a series of FIGS. 3B-B, a schematic cross-sectional structure of the pixel region tangent, there is active for explaining a production flow example of a preferred embodiment of the organic light assembly according to the present invention.

首先,请参考图4a,该像素区域的薄膜晶体管107是形成于一基板110 上,且该基板110上亦具有一緩冲层112,其中緩冲层112的上表面是具有一彩色滤光层预定区113,而之后被形成的有机发光二极管发光单元是形成于该彩色滤光层预定区113的上方。 First, with reference to Figure 4a, the thin film transistor of the pixel region 107 is formed on a substrate 110, and also on the substrate 110 having a buffer layer 112, wherein the upper surface of the buffer layer 112 having a color filter layer the predetermined region 113, the organic light emitting diode is formed after the light emitting element is formed over a predetermined region of the color filter layer 113. 该薄膜晶体管107是包含有一栅极121、 一介电层123、 一半导体层124、 一源极125及一漏极126,其中该半导体层124 可为非晶硅半导体层、有机半导体薄膜层、或是经由低温制程所得的多晶硅半导体层。 The thin film transistor 107 includes a gate 121, a dielectric layer 123, a semiconductor layer 124, a source 125 and a drain electrode 126, wherein the semiconductor layer 124 may be an amorphous silicon semiconductor layer, an organic semiconductor thin film layer, or polycrystalline silicon semiconductor layer via the low-temperature process resulting. 此外,该薄膜晶体管107亦包含一源极接触区125,及一漏极接触区126,,而该源极接触区125,及该漏极接触区126,是分别与该源极125与漏极126电性连结。 In addition, the thin film transistor 107 also includes 125, a drain contact region and a source contact region 126 ,, and 125, and the drain contact region to the source contact region 126, a drain electrode 125 and the source, respectively, 126 is electrically connected. 本发明对于所使用的薄膜晶体管种类并无限制,该薄膜晶体管107可例如为嵌入式薄膜晶体管或是堆垒式薄膜晶体管,且图标的薄膜晶体管结构仅是现有的栅极结构中的一例;而该緩冲层112可为一含氧的硅化物层,且可同时作为栅极绝缘层。 The thin film transistor of the present invention and the type of unrestricted use, the thin film transistor 107 may be, for example, a thin film transistor or the heaps embedded thin film transistor, the thin film transistor structure and the icon is only an example of a conventional gate structure; and the buffer layer 112 may be a silicide layer containing oxygen, and may at the same time as the gate insulating layer. 根据本发明,• 110是可为一透光的基板,例如玻璃或是塑料基板。 According to the present invention, • 110 may be a transparent substrate such as a glass or plastic substrate.

接着,请参照图4b,形成一彩色滤光层114于该该緩冲层112上的该彩色滤光层预定区113。 Next, referring to Figure 4b, the formation of the buffer layer 114 in the color filter layer 113 on a predetermined region of a color filter layer 112. 其中而该彩色滤光层114的使用可依像素数组的需要而更替,例如可于像素数组中依序形成红色滤光片、绿色滤光片及蓝色滤光片。 Wherein the need to use to follow the array of pixels of the color filter layer 114 and replacement, for example, may be sequentially formed red filter, a green color filter and a blue color filter in the pixel array. 而该彩色滤光层的^f吏用也可为以两种颜色的滤光片来达到全彩的效果。 ^ F and with officials of the color filter layer may also be in two color filters to achieve full-color effect. 该彩色滤光层114的形成方式可为颜料^t法、染色法、电着法或是印刷法。 Embodiment is formed of the color filter layer 114 may be a pigment ^ t method, a dyeing method, electrodeposition method or a printing method. 一般来说,彩色滤光层的表面平均粗糙度为20nm左右,因此若直接以该彩色滤光层114作为发光二极管的透明电极的载层势必导致该透明电极的表面平均粗糙度上升。 Generally, the average surface roughness of the color filter layer is approximately 20nm, but if so directly to the color filter layer 114 as a carrier layer, a transparent electrode of the light emitting diode will inevitably lead to increase in the average roughness of the surface of the transparent electrode.

接着,如图4c所示,以一低温制程技术顺应性形成一平坦层116于该彩色滤光层114及緩冲层112上,以完全覆盖该彩色滤光层114。 Subsequently, as shown in a cryogenic process technology in compliance with a planar layer 116 of the color filter layer 114 and the buffer layer 112, so as to completely cover the color filter layer 114 is formed 4c. 其中,该平坦层116可为一介电或绝缘的材质,例如为一低温介电层(low temperature dielectric layer)或是一4t转涂布玻璃(spin-on glass, S0G),且该平坦层116的平均表面粗糙度是不大于lOnm。 Wherein the planarization layer 116 may be a dielectric or insulating material such as a low dielectric (low temperature dielectric layer) coating a glass or a 4t revolution (spin-on glass, S0G), and the planarization layer the average surface roughness of not more than 116 lOnm. 此外,该平坦层116的膜厚是大于200nm,也就是其膜厚必需维持在该彩色滤光层114的表面平均粗糙度的10 倍以上,较佳为20倍以上,以有效降低该平坦层的表面平均湘^造度。 The thickness of the planarization layer 116 is greater than 200 nm, that is, the film thickness must be maintained at more than 10 times the surface of the color filter layer 114 is the average roughness, preferably 20 times or more, effective to reduce the planarization layer average surface made of Xiang ^. 此外, 该低温制程技术是具有一操作温度Tl,而该操作温度Tl是小于该彩色滤光层材料的分解温度(decomposition temperature)T2,以避免损害(damage)该彩色滤光层114,而该^氐温制程技术可例为液相沉积制程(liquid phase deposition, LPD)、旋转涂布制程(spin-on coating)或是賊镀(sputtering) 制程。 In addition, the cryogenic process technology having an operating temperature Tl, Tl and less than the operating temperature of the decomposition temperature of the color filter layer material (decomposition temperature) T2, in order to avoid damage (Damage) the color filter layer 114, and the ^ Di warm process liquid deposition techniques may be cases process (liquid phase deposition, LPD), spin coating process (spin-on coating) or a thief plating (sputtering) process. 在本发明中,该平坦层116较佳可为一低温氧化层或是一低温氮化层。 In the present invention, the planarization layer 116 may preferably be a low temperature oxide layer or a nitride layer is low. 若以该低温氧化层为例,形成该低温氧化层较佳方式为以硅为靶材,并以氧气为反应气体,在操作温度Tl为25(TC下,利用一低温磁控賊镀(low temperature magnetron sputtering)设备进行濺镀。 In terms of the low temperature oxide layer, for example, the cryogenic preferred embodiment is formed of a silicon oxide layer as a target and using oxygen as a reaction gas, at the operating temperature of Tl (at 25 TC, using a low-temperature magnetron thief plating (low temperature magnetron sputtering) sputtering device.

此外,在形成该平坦层116于该彩色滤光层114后,可更对该平坦层116 进行一平坦化处理,以进一步将该平坦层116的表面^T造度降至5nm以下。 Further, the planarization layer 116 is formed after the color filter layer 114, the planarization layer 116 may be more performing a planarization process to further the planar surface 116 of the layer was lowered ^ T made 5nm or less. 该平坦化处理为一退火制程或是研磨处理。 The flattening process is a polishing process or annealing process.

仍请参照图4c,形成一透明导电层118于该平坦层116之上。 Referring still 4c, the transparent conductive layer is formed on a 118 116 to the planarization layer. 该透明导电层118可为铟锡氧化物(IT0)、铟锌氧化物(IZ0)、锌铝氧化物(AZ0)或是氧化锌(Zn0)。 118 may be indium tin oxide (IT0), indium zinc oxide (IZO), aluminum zinc oxide (AZ0) or the transparent conductive layer of zinc oxide (Zn0). 而此透明导电层118可由賊镀法、电子束蒸镀法、热蒸镀法、化学气相镀膜法及喷雾热裂解法所形成。 And the transparent conductive layer 118 may be thief plating, electron beam vapor deposition method is formed, thermal evaporation, chemical vapor plating method and spray pyrolysis method. 该透明导电层118是作为后续形成 The transparent conductive layer 118 is subsequently formed as

的有机发光二极管的阳极电极。 An anode electrode of the organic light emitting diode.

接着,如图4d所示,顺应性形成一图形化绝缘层140于该薄膜晶体管107 及部分的该透明导电层118之上,并露出位于该彩色滤光层114上方的第一极电极118。 Next, as shown in FIG. 4D, a conformable patterned insulating layer formed on the transparent conductive layer 140 in the thin film transistor 107 and the portion 118, and is exposed at the first electrode above the color filter layer 114,118. 该绝缘层140可为介电材质或是有机材质,若为介电材质,则该绝缘层140可为绝缘的氧化物、碳化物、氮化物及其组合物所组成的族群中, 像是氧化硅(SiOx)、氧化铝(A10x)、氧化镁(MgO)、氮化硅(SiNx)、氮化铝(AlNx) 或是氟化镁(MgFx)等;该绝缘层140亦可为有机材质,像是丙烯酸树脂(acrylic resin)、聚亚醯胺(polyimide)或是可利用感光或加热固化的透明光阻材质。 The insulating layer 140 may be a dielectric material or organic material, if a dielectric material, the insulating layer may be an insulating group oxides, carbides, nitrides, and the composition consisting of 140, such as oxide silicon (the SiOx), aluminum oxide (A10x), magnesium oxide (MgO), silicon nitride (an SiNx), aluminum nitride (AlNx), or magnesium fluoride (MgFx) and the like; the insulating layer 140 may also be an organic material, such as an acrylic resin (acrylic resin), poly Amides (Polyimide) or may utilize a photosensitive or heat-curable transparent resist material.

最后,请参照图4e,依序形成一有机电激发光层142及一金属电极144 于上述结构,以使该有才几电激发光层142与该透明电极118的上表面接触, 且该金属电极144是与该有机电激发光层142的上表面接触。 Finally, please refer to 4e, the sequence 142 is formed in contact with the upper surface of the transparent electrode 118 and the metal layer is a light organic electroluminescent layer 142 and a metal electrode 144 in the above-described configuration, so that several electroluminescent talented electrode 144 is an organic layer on the light emitting surface 142 in contact with the. 至此完成本发明所述的全彩化主动式有机电激发光组件的制造方法。 This completes the full color of the present invention is a method for producing an active optical module has an electromechanical excitation. 该透明电极118、该有机电激发光层142及该金属电极144所形成的堆垒结构是构成本发明所述的有机发光二极管105。 The transparent electrode 118, the organic electroluminescent structure of the piling 142 and metal electrode 144 formed on the light absorbing layer is composed of an organic light emitting diode 105 according to the present invention. 其中,该有机电激发光层142可为小分子或高分子有机电激发光材料,且可为单层的有机发光二极管材料层或多层有机电激发光材料层迭合构成。 Wherein the organic electroluminescent layer 142 may be organic electroluminescent material is a polymer or a small molecule, an organic light emitting diode and may be a multilayer material layer or a single layer of organic electroluminescent material layer is laminated to engage. 若为小分子有机电激发光材料,可利用真空蒸镀方式形成;若为高分子有机电激发光材料,则可使用旋转涂布、喷墨或网版印刷等方式形成有机发光二极管材料层;该金属电极144的材料可选自Ca、 Ag、 Mg、 Al、 Li及其它低工作函数的金属材料或复合金属材料,形成方式可为真空热蒸镀或濺镀方式。 If a small molecule organic electroluminescent material, may be formed by a vacuum deposition mode; if it is a high molecular organic electroluminescent material, an organic light emitting diode material layer may be formed using a spin coater, ink jet, or screen printing, etc.; the material of the metal electrode 144 may be selected from Ca, Ag, Mg, metallic materials Al, Li and other low work function metal or composite material, may be formed so as vacuum thermal evaporation or sputtering method.

请参照图5,为图4e的区域C的剖面示意图,4艮据本发明所述的全彩化主动式有机电氣t光组件,该粗糙的彩色滤光层114的表面115上是形成有 Referring to FIG. 5, is a cross-sectional view of region C of FIG. 4e, Gen 4 according to full-color active matrix organic light t Electrical assembly according to the present invention, the rough surface 115 on the color filter layer 114 is formed

一具有平坦表面117(表面粗糙度小于10nm)的平坦层116,而该平坦层116有 117 having a flat surface (surface roughness less than 10nm) planar layer 116 and the planarization layer 116 has a

助于降低后续形成的透明电极118表面119的相4t度,以避免組件短路及漏 Help lower surface 119 of the transparent electrode 118 is formed subsequent phase of 4t, to avoid a short circuit and leakage component

电流。 Current. 此外,在有机电激发光组件的制程中,为了增加有机发光二极管組件 Further, in the organic electroluminescent assembly process in order to increase the organic light emitting diode assembly

的效能,在形成有机电激发光层之前,会先对该透明导电层106进行氧电浆 Performance, before forming the organic electroluminescent layer, the oxygen plasma will first transparent conductive layer 106

表面改质程序,而该平坦层可进一步避免氧电浆损伤该彩色滤光层114。 Surface modification procedure, and the planarization layer may further prevent oxygen plasma damage the color filter layer 114.

图6是概略地表示一电子装置200,其具有前述主动式有机电激发光组 FIG 6 is a schematic showing an electronic device 200 having the organic light active group

件。 Pieces. 该电子装置200是可以为一可携式装置,例如PDA、笔记型计算机、平板计算机(tablet computer)、行动电话或显示器装置…等等。 The electronic device 200 may be a portable device such as PDA, a notebook computer, a tablet computer (tablet computer), mobile phone, or a display device ... and the like. 一般来说,电子装置200包括一外壳210、 一主动式有机电激发光组件300以及电源供应单元400…等等。 Generally, the electronic device 200 includes a housing 210, an active type organic light assembly 300 and a power supply unit 400 ... and so on. 此外,电源供应单元400是用以供应电源至主动式有机电激发光组件300。 Further, the power supply unit 400 is to supply power to the active organic light assembly 300.

虽然本发明已以较佳实施例揭露如上,然其并非用以限定本发明,任何熟习此技艺者,在不脱离本发明的精神和范围内,当可作些许的更动与润饰, 因此本发明的保护范围当视所附的权利要求范围所界定者为准。 Although the invention has been described by reference to preferred embodiments, they are not intended to limit the present invention, any person skilled in this art, without departing from the spirit and scope of the present invention, may make various modifications and variations, so this range and their equivalents depending on the scope of the invention as claimed in the appended claims.

12 12

Claims (13)

1. 一种全彩化主动式有机电激发光组件的制造方法,其包含有下列步骤:提供一基板;形成多个薄膜晶体管及一缓冲层于该基板之上;形成一彩色滤光层于该缓冲层上;以一低温制程技术形成一平坦层于该彩色滤光层上,该平坦层为旋转涂布玻璃、低温介电层、低温氧化层或是低温氮化层,低温制程技术中的操作温度低于彩色滤光材料的分解温度;以及形成一第一电极于该平坦层上,并与该薄膜晶体管电性连结。 A full-color active method for producing organic electroluminescent light assembly, which comprises the steps of: providing a substrate; a plurality of thin film transistors are formed and a buffer layer on the substrate; forming a color filter layer on the buffer layer; a low-temperature process techniques to form a planarization layer on the color filter layer, the planarization layer is a spin coated glass, low dielectric, low-temperature oxide layer or nitride layer is low, the low temperature process techniques the operating temperature is below the decomposition temperature of the color filter material; and forming a first electrode connected to the thin film transistor is electrically on the planarization layer, and.
2. 根据权利要求1所述的全彩化主动式有机电激发光组件的制造方法, 其中更包括对该平坦层进行一平坦化处理。 The full-color according to claim 1 proactive method for producing organic electroluminescent light assembly, wherein the planarization layer further comprises a planarization process.
3. 根据权利要求1所述的全彩化主动式有机电激发光组件的制造方法, 其中该低温制程技术具有一操作温度且该操作温度是不大于35(TC。 3. The full-color according to claim 1 proactive method for producing organic electroluminescent light components, wherein the cryogenic process technology has an operating temperature and the operating temperature is not more than 35 (TC.
4. 根据权利要求1所述的全彩化主动式有机电激发光组件的制造方法, 其中该平坦层的表面粗糙度是不大于10nm。 The full-color according to claim 1 proactive method for producing organic electroluminescent light component, wherein the surface roughness of the flat layer is not greater than 10nm.
5. 根据权利要求1所述的全彩化主动式有机电激发光组件的制造方法, 其中该低温制程技术为液相沉积制程、旋转涂布制程、低温磁控'减镀或是賊镀。 The full-color according to claim 1 proactive method for producing organic electroluminescent light components, wherein the cryogenic process technology as the liquid phase deposition process, the spin coating process, the low-temperature magnetron 'Save plating or plating thief.
6. 根据权利要求1所述的全彩化主动式有机电激发光组件的制造方法, 其中该平坦层的厚度为该彩色滤光层的表面粗糙度的IO倍以上。 The full-color according to claim 1 proactive method for producing organic electroluminescent light components, more IO times wherein a thickness of the planar layer for the surface roughness of the color filter layer.
7. 根据权利要求1所述的全彩化主动式有机电激发光组件的制造方法, 更包括接连形成一有机电激发光层及一第二电极于该第一电极上。 The full-color according to claim 1 proactive method for producing organic electroluminescent light assembly, further comprising successively forming an organic electroluminescent layer and a second electrode on the first electrode.
8. —种全彩化主动式有机电激发光组件,其包含有多个数组的像素区域形成于一基板上,其中每一像素区域是包含:一薄膜晶体管,形成于该基板上;一緩冲层,形成于该薄膜晶体管外的该基板上;一彩色滤光层,形成于该緩冲层上;一平坦层,以一低温制程技术制成并形成于该彩色滤光层上,该平坦层为旋转涂布玻璃、低温介电层、低温氧化层或是低温氮化层,低温制程技术中的操作温度低于彩色滤光材料的分解温度;一第一电极形成于该平坦层上,并与该薄膜晶体管电性连结;一有机电激发光层,形成于该第一电极上;以及一第二电极,形成于该有机电激发光层上。 8. - The active species of full color organic electroluminescent assembly comprising a plurality of arrays of pixel areas formed on a substrate, wherein each pixel region comprising: a thin film transistor formed on the substrate; a slow red layer on the substrate, is formed on the outside of the thin film transistor; a color filter layer formed on the buffer layer; a planarization layer to a low temperature process techniques and are formed on the formed color filter layer, the spin coating a glass planarization layer, the dielectric layer is a low temperature, a low temperature oxide layer or a nitride layer is low, the low temperature process techniques operating temperatures below the decomposition temperature of the color filter material; a first electrode formed on the planarization layer and connecting electrically with the thin film transistor; an organic electroluminescent layer formed on the first electrode; and a second electrode formed on the organic electroluminescent light emitting layer.
9. 根据权利要求8所述的全彩化主动式有机电激发光组件,其中该低温制程技术具有一操作温度,该操作温度是不大于350°C。 According to claim 8, the full-color organic electroluminescent active components, wherein the cryogenic process technology has an operating temperature, the operating temperature is not greater than 350 ° C.
10. 根据权利要求8所述的全彩化主动式有机电激发光组件,其中该平坦层的表面粗糙度是不大于10nm。 According to claim 8, the full-color organic electroluminescent active component, wherein the surface roughness of the flat layer is not greater than 10nm.
11. 根据权利要求8所述的全彩化主动式有机电激发光组件,其中该平坦层的厚度为该彩色滤光层的表面粗糙度的IO倍以上。 According to claim 8, the full-color organic electroluminescent active component, wherein the roughness of the layer thickness of the flat surface of the color filter layer for more IO times.
12. 根据权利要求8所述的全彩化主动式有机电激发光組件,更包括一图形化的绝缘层,形成于该第一电极上,以露出位于该彩色滤光层上方的该第一电极。 According to claim 8, the full-color active-type organic light assembly, further comprising a patterned insulating layer formed on the first electrode to expose the first located above the color filter layer electrode.
13.—种电子装置,包括:一根据权利要求8所述的全彩化主动式有机电激发光组件,以及一电源供应单元,耦接至该全彩化主动式有机电激发光组件,用以供电至该全彩化主动式有机电激发光组件。 13.- electronic device, comprising: a full-color according to claim 8, the active organic light assembly, and a power supply unit coupled to the full-color organic electroluminescent active component, with to supply power to the full-color organic electroluminescent active component.
CN 200410091605 2004-11-23 2004-11-23 Color active organic electroluminescent assembly, its production and electronic device CN100492452C (en)

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CN1400673A (en) 1999-06-04 2003-03-05 株式会社半导体能源研究所 Electrooptical device and electronic equipment
CN1404158A (en) 2001-08-30 2003-03-19 联华电子股份有限公司 Making process of phase grating image sensor
CN1523436A (en) 2003-08-08 2004-08-25 友达光电股份有限公司 Colorful light filter production method and semi-transmissive liquid crystal display device
CN1530706A (en) 2003-03-17 2004-09-22 统宝光电股份有限公司 Masking external frame structure of liquid-crystal displaying panel and producing method thereof
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CN1400673A (en) 1999-06-04 2003-03-05 株式会社半导体能源研究所 Electrooptical device and electronic equipment
CN1404158A (en) 2001-08-30 2003-03-19 联华电子股份有限公司 Making process of phase grating image sensor
CN1385741A (en) 2002-06-19 2002-12-18 展茂光电股份有限公司 Structure for LCD of organic luminous material film transistor and making method thereof
CN1530706A (en) 2003-03-17 2004-09-22 统宝光电股份有限公司 Masking external frame structure of liquid-crystal displaying panel and producing method thereof
CN1523436A (en) 2003-08-08 2004-08-25 友达光电股份有限公司 Colorful light filter production method and semi-transmissive liquid crystal display device
CN1544986A (en) 2003-11-24 2004-11-10 友达光电股份有限公司 Contrast and reaction speed promoted multi-domain perpendicular direction matching transistor liquid crystal display

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