CN100481267C - Method for using nonvolatile memory and electronic apparatus thereof - Google Patents
Method for using nonvolatile memory and electronic apparatus thereof Download PDFInfo
- Publication number
- CN100481267C CN100481267C CNB2004100551655A CN200410055165A CN100481267C CN 100481267 C CN100481267 C CN 100481267C CN B2004100551655 A CNB2004100551655 A CN B2004100551655A CN 200410055165 A CN200410055165 A CN 200410055165A CN 100481267 C CN100481267 C CN 100481267C
- Authority
- CN
- China
- Prior art keywords
- nonvolatile memory
- data
- updating
- datas
- electronic installation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The invention discloses a non-volatile memory body method and electronic device, which comprises the following steps: first, providing a non-volatile memory body with several present data; second, inputting the new data in the unencumbered space of non-volatile memory body; finally, inputting the new data in the erasing area of non-volatile memory body when the application space of present data and non-volatile memory body is full.
Description
Technical field
The present invention relates to a kind of using method and device thereof of storer, particularly relate to a kind of method and electronic installation thereof that uses nonvolatile memory.
Background technology
Can generally be divided into volatile memory (volatilememory) and nonvolatile memory (non-volatile memory) according to its characteristic for the storer of system access.The volatibility memory for example has dynamic RAM (DRAM) and static RAM (SRAM), this kind storer wherein stored data (data is data, below all be called data) behind system closedown (stop supplies electric energy) also dissipates thereupon.The volatibility memory has read-write and need wipe the advantage that (erasing) can rewrite (rewrite) fast and not.Otherwise nonvolatile memory is behind system closedown (stop supplies electric energy), and wherein stored data can't disappear thereupon.Yet nonvolatile memory must be wiped before the rewriting data usually, data correctly could be write then.In various nonvolatile memories, flash memory (flash memory, flash memory is flash memory, below all is called flash memory) can be its representative.
A piece of wood serving as a brake to halt a carriage body that flash memory is mainly used in system stores, even in order to the stocking system parameter.The characteristic of flash memory be time of wiping for a long time, and be unit once with a block (sector).Generally speaking, the time (sector erase time) that flash memory is wiped a block is about 1 (representative value)～8 (maximal value) second, and write time (the byte programmingtime of a bit group, the bit group is byte, below all is called the bit group) be about 35 (representative value)～300 (maximal value) microseconds.System usually need be with certain parameter data storage in a flash memory.Each user is after having done some operation, and system will write back on the non-volatile storer of this part after these data will being wiped again.If frequent when wiping the action that writes back again, will have some setbacks after allowing the user operate for a long time because of the erasing time with the configuration of stocking system in nonvolatile memory or other information (information is information, below all be called information).Moreover the wiping of general flash memory writes the life-span and is about about 100,000 times.Wipe too continually and re-write and to quicken to shorten the tenure of use of flash memory and reduce fiduciary level (reliability).
This shows that the method for above-mentioned existing use nonvolatile memory and electronic installation thereof obviously still have inconvenience and defective, and demand urgently further being improved in using method and use.In order to solve the problem that the method for using nonvolatile memory and electronic installation thereof exist, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and the method for general use nonvolatile memory and electronic installation thereof do not have appropriate using method and structure to address the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.
Because the defective that the method for above-mentioned existing use nonvolatile memory and electronic installation thereof exist, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of method and electronic installation thereof of new use nonvolatile memory, can improve the method and the electronic installation thereof of general existing use nonvolatile memory, make it have more practicality.Through constantly research, design, and after studying repeatedly and improving, create the present invention who has practical value finally.
Summary of the invention
The objective of the invention is to, overcome the defective of the method existence of existing use nonvolatile memory, and provide a kind of method of new use nonvolatile memory, technical matters to be solved is to make it can be when desire is upgraded data wherein in the not usage space with the new data write non-volatile memory, after using up, just wipes the capacity of nonvolatile memory (erasing), therefore reduce the number of times of wiping, thereby save the erasing time and prolong its serviceable life, thereby be suitable for practicality more.
Another object of the present invention is to, overcome the defective of the electronic installation existence of existing use nonvolatile memory, and provide a kind of electronic installation that uses nonvolatile memory, technical matters to be solved is to make it except that having aforementioned all purposes, more can actual device realize the present invention, thereby be suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to a kind of method of using nonvolatile memory that the present invention proposes, it may further comprise the steps: a. provides a nonvolatile memory, wherein most raw datas of preload; B. not usage space is still arranged when this nonvolatile memory, and desire with a data for updating upgrade those raw datas one of them the time, this data for updating is write in the not usage space of this nonvolatile memory; And c. is when desire is upgraded those raw datas one of them and this nonvolatile memory and do not had not usage space, those raw datas in this nonvolatile memory are all read, and upgrade those raw datas one by one according to this data for updating, and preserve those raw datas after the complete renewal, those raw datas after upgrading are write in this nonvolatile memory after whole the wiping.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The method of aforesaid use nonvolatile memory, wherein said step c comprises: this nonvolatile memory is wiped this nonvolatile memory after reading those raw datas certainly.
The method of aforesaid use nonvolatile memory, wherein said step c is that those raw datas after the start address place of this nonvolatile memory after wiping will upgrade in regular turn write.
The method of aforesaid use nonvolatile memory, the address that this data for updating write among the wherein said step b are the usage spaces that abuts against this nonvolatile memory.
The method of aforesaid use nonvolatile memory, wherein said nonvolatile memory comprises a raw data district and a data for updating district, those raw datas of institute's preload are promptly deposited in this raw data district, when desire upgrade in this raw data district those raw datas one of them the time, be about to this data for updating and write in regular turn in this data for updating district.
The method of aforesaid use nonvolatile memory, wherein said data for updating comprises an address information and a present data, wherein this address information is one of them address in this raw data district of those raw datas of pointing out that desire is upgraded, and this present data is the new data that place, the address desire of this address information indication is upgraded.
The method of aforesaid use nonvolatile memory, more comprise when the electronic installation with this nonvolatile memory is started shooting, then read those raw datas, wipe this nonvolatile memory and will upgrade after those raw datas write this nonvolatile memory.
The method of aforesaid use nonvolatile memory, wherein said nonvolatile memory are to be flash memory (flash memory).
The method of aforesaid use nonvolatile memory, wherein said those raw datas are the systematic parameters for a video-audio playing device.
The method of aforesaid use nonvolatile memory, wherein said video-audio playing device are to be a laser disc playing device.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.According to a kind of electronic installation that uses nonvolatile memory that the present invention proposes, it comprises: a nonvolatile memory, and most raw datas of preload wherein, those raw datas are the systematic parameters for this electronic installation; An and controller, be coupled to this nonvolatile memory, in order to when desire with a data for updating upgrade those raw datas one of them the time, if this nonvolatile memory still has not usage space, then this data for updating is write in the not usage space of this nonvolatile memory, and when if this nonvolatile memory has not had not usage space, those raw datas in this nonvolatile memory are all read, and upgrade those raw datas one by one according to this data for updating, and preserve those raw datas after the complete renewal, in this nonvolatile memory that upgrades after those present raw datas of back write whole wiping.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The electronic installation of aforesaid use nonvolatile memory, wherein when this controller desire with this data for updating upgrade those raw datas one of them the time, if this nonvolatile memory do not had not usage space, wipe this nonvolatile memory after then reading the stored data of this nonvolatile memory earlier and keeping the final updating result of those raw datas.
The electronic installation of aforesaid use nonvolatile memory is that those raw datas after the start address place will upgrade in regular turn write after wherein said nonvolatile memory is wiped free of.
The electronic installation of aforesaid use nonvolatile memory, wherein said controller is the usage space that abuts against this nonvolatile memory with the address that this data for updating writes this nonvolatile memory.
The electronic installation of aforesaid use nonvolatile memory, wherein said nonvolatile memory comprises a raw data district and a data for updating district, those raw datas of institute's preload promptly leave in this raw data district, when this controller desire upgrade in this raw data district those raw datas one of them the time, be about to this data for updating and write in regular turn in this data for updating district.
The electronic installation of aforesaid use nonvolatile memory, wherein said data for updating comprises an address information and a present data, wherein this address information is one of them address in this raw data district of those raw datas of pointing out that desire is upgraded, and this present data is the new data that place, the address desire of this address information indication is upgraded.
The electronic installation of aforesaid use nonvolatile memory, wherein when this electronic installation is started shooting, this controller reads all stored data of this nonvolatile memory earlier and keeps the final updating result of those raw datas, and the final updating result who wipes behind this nonvolatile memory those raw datas that will be kept then writes this nonvolatile memory.
The electronic installation of aforesaid use nonvolatile memory, wherein said nonvolatile memory are to be flash memory (flash memory).
The electronic installation of aforesaid use nonvolatile memory, wherein said electronic installation are to be a video-audio playing device.
The electronic installation of aforesaid use nonvolatile memory, wherein said electronic installation are to be a laser disc playing device.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, in order to reach aforementioned goal of the invention, major technique of the present invention thes contents are as follows:
The present invention proposes a kind of method of using nonvolatile memory, comprises that step is as follows.At first provide nonvolatile memory, wherein a plurality of raw datas of preload.When nonvolatile memory still has not usage space, and desire with data for updating upgrade each raw data one of them the time, in the not usage space with the data for updating write non-volatile memory.When desire is upgraded each raw data one of them and nonvolatile memory and do not had not usage space, the raw data after upgrading is write in the nonvolatile memory after wiping.
The present invention proposes a kind of electronic installation that uses nonvolatile memory in addition, comprises nonvolatile memory and controller.A plurality of raw datas of preload in the nonvolatile memory, this raw data are the systematic parameters of electronic installation for this reason.Controller is coupled to nonvolatile memory.When desire with data for updating upgrade each raw data one of them the time, if not volatile memory still has not usage space, then in the not usage space with the data for updating write non-volatile memory; If not when volatile memory has not had not usage space, then will upgrade each present raw data of back and write in the nonvolatile memory after wiping.
Via as can be known above-mentioned, the invention relates to a kind of method and electronic installation thereof that uses nonvolatile memory, this method comprises the steps.At first provide nonvolatile memory, wherein a plurality of raw datas of preload.When nonvolatile memory still has not usage space, and desire with data for updating upgrade each raw data one of them the time, in the not usage space with the data for updating write non-volatile memory.When desire is upgraded each raw data one of them and nonvolatile memory and do not had not usage space, the raw data after upgrading is write in the nonvolatile memory after wiping.
By technique scheme, the present invention uses the method for nonvolatile memory and electronic installation thereof to have following advantage at least:
The present invention is because in upgrading nonvolatile memory during data, be in the not usage space with the new data write non-volatile memory, after using up, just wipes the capacity of nonvolatile memory (erasing), and do not wipe when each desire is upgraded in the nonvolatile memory data like prior art, therefore a large amount of number of times of wiping that reduce reach the advantage of saving the erasing time and prolonging its serviceable life.
In sum, the method of the use nonvolatile memory that the present invention is special, can be when desire is upgraded data wherein in the not usage space with the new data write non-volatile memory, after using up, just wipes the capacity of nonvolatile memory (erasing), therefore reduce the number of times of wiping, reach and save the erasing time and prolong its serviceable life.The electronic installation of the use nonvolatile memory of special construction of the present invention more can actual device be realized the present invention.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of instructions, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by going out preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Figure 1A is that a preferred embodiment of the present invention illustrates a kind of regional calcspar in the storer.
Figure 1B is a kind of data structure figure that a preferred embodiment of the present invention illustrates systematic parameter updating form among Figure 1A.
Fig. 2 is a kind of method flow diagram that uses nonvolatile memory that a preferred embodiment of the present invention illustrates.
Fig. 3 is the part circuit block diagram of a kind of DVD playing device of being illustrated of another preferred embodiment of the present invention.
100,330: flash memory (flash memory)
110: raw data district, for example storage system parameter (system parameter)
120: the data for updating district, for example deposit parameter update table (parameter update list)
S210～S270: according to described a kind of each step of using the nonvolatile memory method of preferred embodiment of the present invention
121～124: the regional 300:DVD playing device of each of parameter update table
320: Synchronous Dynamic Random Access Memory (SDRAM) 310: core circuit
340: controller 350:MPEG decoding circuit
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, method and its embodiment of electronic installation, using method, step, structure, feature and the effect thereof of the use nonvolatile memory that foundation the present invention is proposed, describe in detail as after.
Traditionally, because not with nonvolatile memory (be side illustrates the present invention, below only represent it) subregion use, so each operation writes after all whole flash memory must being wiped again again with flash memory.In an embodiment of the present invention, be that the flash memory subregion is used.Figure 1A is that a preferred embodiment of the present invention illustrates a kind of regional calcspar in the storer.See also shown in Figure 1A, flash memory (flash memory) 100 for example comprises raw data (original data) district 110 and data for updating (new data) district 120.At this, raw data district 110 is storage system parameter (systemparameter) for example, and supposes the capacity that raw data district 110 has 256 bit groups.Data for updating district 120 is storage system parameter update table (parameter update list) for example.
In the present embodiment, the data structure of systematic parameter updating form can be implemented according to Figure 1B.Figure 1B is a kind of data structure figure that a preferred embodiment of the present invention illustrates systematic parameter updating form 120 among Figure 1A.In Figure 1B, in the data for updating district 120 in the flash memory 100 zone of a plurality of storage parameter data of planning (as zone 121～124), when data for updating need be write, just select a zone of arriving also useless at every turn, for example, write one by one in regular turn from zone 121 beginnings of lowest address, after data for updating district 120 has been write completely, wipe again.
The update method of systematic parameter will be described in detail as follows in the flash memory 100.Fig. 2 is a kind of method flow diagram that uses nonvolatile memory that illustrates according to a preferred embodiment of the present invention.Please consult Figure 1A, 1B and shown in Figure 2 simultaneously.Because the characteristic of flash memory is that the data that reads out after wiping is 1 entirely, so each bit is the end (for example zone 123 is with shown in the zone 124) that 1 address or data can be used for representing data for updating entirely.In addition, each bit of address or data is 1 also to represent it to be usage space not entirely.
When initial, the raw data district 110 in the flash memory 100 has prestored many systematic parameter data.In step S220, when the user changes a certain systematic parameter because of operating system (for example desire is updated to 0x17 with the raw data of address 0x20 in the raw data district 110), check that promptly the data for updating district 120 in the flash memory 100 has or not usage space (step S230).If still untapped zone is arranged, promptly carry out step S240, address and the data of desiring the update system parameter write in the data for updating district 120 (for example zone 121) (step S240) in regular turn.Supposing the system this moment (step S220) is update system parameter data (for example desire is updated to 0x20 with the raw data of address 0x32 in the raw data district 110) again, and still there is untapped zone (step S230) in data for updating district 120, so the address of update system parameter will be desired by system and data writes in the data for updating district 120 (for example zone 122) (step S240) in regular turn.The rest may be inferred, just carries out step S250 after data for updating district 120 is used up.
In step S250, when data for updating is write full the time, just data in the flash memory 100 is all read, and after the raw data (systematic parameter data) in raw data district 110 upgraded one by one according to the record of systematic parameter updating forms in the data for updating district 120, the systematic parameter after the complete renewal is kept to treat that subsequent step uses.Then carry out step S260, wipe all data in the flash memory 100.Wait to wipe and carry out step S270 after finishing, systematic parameter after the renewal that is kept among the step S250 is write raw data district 110.
As mentioned above, system with flash memory 100 whole wipe more up-to-date systematic parameter content is write back raw data district 110 after, just can empty the renewal of data for updating district 120 in order to systematic parameter.So, because the data that writes seldom (with the present embodiment is example, and each the renewal only needs 2 bit groups), the number of times of wiping also reduces relatively, and the reaction velocity and flash memory life-span of system all is very helpful.
Moreover, if write and must wait for the phenomenon of wiping after full, can when starting shooting, reform, the systematic parameter data updating in the raw data district 110 to system in order to reduce data for updating district 120 at every turn.Therefore, can add more in the present embodiment that step S210 is to reach aforesaid purpose.In other words, in each start (step S211), just data in the flash memory 100 is all read (step S212), and after the raw data (systematic parameter data) in raw data district 110 upgraded one by one according to the record of systematic parameter updating forms in the data for updating district 120, the systematic parameter after the complete renewal is kept to treat that subsequent step uses.Then wipe all data (step S213) in the flash memory 100.Wait to wipe and systematic parameter after the renewal that is kept among the step S212 is write raw data district 110 (step S214) after finishing.Therefore, can empty data for updating district 120 and be equipped with the required of systematic parameter to upgrade.
For more clearly demonstrating the present invention, below in addition for an embodiment.Present embodiment will be an example so that spirit of the present invention is described with the DVD playing device, but should be as limit.Fig. 3 is the part circuit block diagram of a kind of DVD playing device of being illustrated of another preferred embodiment of the present invention.See also shown in Figure 3, DVD playing device 300 for example comprises core circuit 310, Synchronous Dynamic Random Access Memory (SDRAM, Synchronous Dynamic Random Access Memory) 320 and nonvolatile memory (present embodiment is represented with flash memory) 330.Many raw datas of preload (present embodiment for example be the systematic parameter data) in the flash memory 330.
For example comprise controller 340 and mpeg decode circuit 350 in the core circuit 310.Controller 340 can directly or indirectly be coupled to flash memory 330.When desire with data for updating upgrade each systematic parameter data one of them the time, if flash memory 330 still has not usage space, then controller 340 writes data for updating in the not usage space of flash memory 330.When if flash memory 330 has not had not usage space, then controller 340 reads all stored data of flash memory 330 earlier.At this, the storage configuration of data is for example used it according to flash memory 100 shown in Figure 1A and Figure 1B in the flash memory 330.When data for updating is write full the time, just data in the flash memory 330 (being the flash memory 100 of Figure 1A) is all read, and after the raw data (systematic parameter data) in raw data district 110 upgraded one by one according to the record of systematic parameter updating forms in the data for updating district 120, the systematic parameter after the complete renewal is temporarily stored in SDRAM 320.Controller 340 sends erasing instruction to remove all data in the flash memory 330 then.Wait to wipe finish after, controller 340 with the renewal that is kept among the SDRAM 320 after systematic parameter write raw data district 110.Other correlation techniques can apply according to preceding embodiment is described, so do not give unnecessary details at this.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (20)
1, a kind of method of using nonvolatile memory is characterized in that it may further comprise the steps:
A. provide a nonvolatile memory, wherein most raw datas of preload;
B. not usage space is still arranged when this nonvolatile memory, and desire with a data for updating upgrade those raw datas one of them the time, this data for updating is write in the not usage space of this nonvolatile memory; And
C. when desire is upgraded those raw datas one of them and this nonvolatile memory and has not been had not usage space, those raw datas in this nonvolatile memory are all read, and upgrade those raw datas one by one according to this data for updating, and preserve those raw datas after the complete renewal, those raw datas after upgrading are write in this nonvolatile memory after whole the wiping.
2, the method for use nonvolatile memory according to claim 1 is characterized in that wherein said step c comprises:
After reading those raw datas, wipes by this nonvolatile memory this nonvolatile memory;
3, the method for use nonvolatile memory according to claim 1 is characterized in that wherein said step c is that those raw datas after the start address place of this nonvolatile memory after wiping will upgrade in regular turn write.
4, the method for use nonvolatile memory according to claim 1 is characterized in that the address that this data for updating write among the wherein said step b is the usage space that abuts against this nonvolatile memory.
5, the method for use nonvolatile memory according to claim 1, it is characterized in that wherein said nonvolatile memory comprises a raw data district and a data for updating district, those raw datas of institute's preload are promptly deposited in this raw data district, when desire upgrade in this raw data district those raw datas one of them the time, be about to this data for updating and write in regular turn in this data for updating district.
6, the method for use nonvolatile memory according to claim 5, it is characterized in that wherein said data for updating comprises an address information and a present data, wherein this address information is one of them address in this raw data district of those raw datas of pointing out that desire is upgraded, and this present data is the new data that place, the address desire of this address information indication is upgraded.
7, the method for use nonvolatile memory according to claim 1, it is characterized in that more comprising when the electronic installation with this nonvolatile memory is started shooting, then read those raw datas, wipe this nonvolatile memory and will upgrade after those raw datas write this nonvolatile memory.
8, the method for use nonvolatile memory according to claim 1 is characterized in that wherein said nonvolatile memory is to be flash memory.
9, the method for use nonvolatile memory according to claim 1 is characterized in that wherein said those raw datas are the systematic parameters for a video-audio playing device.
10, the method for use nonvolatile memory according to claim 9 is characterized in that wherein said video-audio playing device is to be a laser disc playing device.
11, a kind of electronic installation that uses nonvolatile memory is characterized in that it comprises:
One nonvolatile memory, most raw datas of preload wherein, those raw datas are the systematic parameters for this electronic installation; And
One controller, be coupled to this nonvolatile memory, in order to when desire with a data for updating upgrade those raw datas one of them the time, if this nonvolatile memory still has not usage space, then this data for updating is write in the not usage space of this nonvolatile memory, and when if this nonvolatile memory has not had not usage space, those raw datas in this nonvolatile memory are all read, and upgrade those raw datas one by one according to this data for updating, and preserve those raw datas after the complete renewal, in this nonvolatile memory that upgrades after those present raw datas of back write whole wiping.
12, the electronic installation of use nonvolatile memory according to claim 11, it is characterized in that wherein when this controller desire with this data for updating upgrade those raw datas one of them the time, if this nonvolatile memory do not had not usage space, then after reading the stored data of this nonvolatile memory and keeping the final updating result of those raw datas, wipe this nonvolatile memory.
13, the electronic installation of use nonvolatile memory according to claim 11 is characterized in that after wherein said nonvolatile memory is wiped free of it being that those raw datas after the start address place will upgrade in regular turn write.
14, the electronic installation of use nonvolatile memory according to claim 11 is characterized in that wherein said controller is the usage space that abuts against this nonvolatile memory with the address that this data for updating writes this nonvolatile memory.
15, the electronic installation of use nonvolatile memory according to claim 11, it is characterized in that wherein said nonvolatile memory comprises a raw data district and a data for updating district, those raw datas of institute's preload promptly leave in this raw data district, when this controller desire upgrade in this raw data district those raw datas one of them the time, be about to this data for updating and write in regular turn in this data for updating district.
16, the electronic installation of use nonvolatile memory according to claim 15, it is characterized in that wherein said data for updating comprises an address information and a present data, wherein this address information is one of them address in this raw data district of those raw datas of pointing out that desire is upgraded, and this present data is the new data that place, the address desire of this address information indication is upgraded.
17, the electronic installation of use nonvolatile memory according to claim 11, it is characterized in that wherein when this electronic installation is started shooting, this controller reads all stored data of this nonvolatile memory earlier and keeps the final updating result of those raw datas, and the final updating result who wipes behind this nonvolatile memory those raw datas that will be kept then writes this nonvolatile memory.
18, the electronic installation of use nonvolatile memory according to claim 11 is characterized in that wherein said nonvolatile memory is to be flash memory.
19, the electronic installation of use nonvolatile memory according to claim 11 is characterized in that wherein said electronic installation is to be a video-audio playing device.
20, the electronic installation of use nonvolatile memory according to claim 11 is characterized in that wherein said electronic installation is to be a laser disc playing device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100551655A CN100481267C (en) | 2004-08-09 | 2004-08-09 | Method for using nonvolatile memory and electronic apparatus thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100551655A CN100481267C (en) | 2004-08-09 | 2004-08-09 | Method for using nonvolatile memory and electronic apparatus thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1734678A CN1734678A (en) | 2006-02-15 |
| CN100481267C true CN100481267C (en) | 2009-04-22 |
Family
ID=36077010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100551655A Expired - Fee Related CN100481267C (en) | 2004-08-09 | 2004-08-09 | Method for using nonvolatile memory and electronic apparatus thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100481267C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101221816B (en) * | 2007-01-12 | 2013-04-24 | 张国飙 | Mask programming memory device with obligate space |
| CN105990362A (en) * | 2015-02-10 | 2016-10-05 | 成都海存艾匹科技有限公司 | 3D-MPROMRL (three-dimensional mask-programmable read-only memory) with reserved space |
| US10643692B2 (en) * | 2018-03-02 | 2020-05-05 | Sandisk Technologies Llc | Adaptive programming voltage for non-volatile memory devices |
-
2004
- 2004-08-09 CN CNB2004100551655A patent/CN100481267C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1734678A (en) | 2006-02-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100504814C (en) | Flash-memory zone block management method | |
| TWI382421B (en) | Hybrid density memory storage device | |
| CN102890620B (en) | Non-volatile ephemeral data processing | |
| CN103562883B (en) | Dynamic memory cache memory sizes in storage arrangement is adjusted | |
| TWI389125B (en) | Memory storage device and control method thereof | |
| CN102880556B (en) | Wear leveling method and system of Nand Flash | |
| CN102306125A (en) | Method for erasing and writing data of FLASH memory | |
| CN100547566C (en) | Control method based on multi-passage flash memory apparatus logic strip | |
| US7245527B2 (en) | Nonvolatile memory system using magneto-resistive random access memory (MRAM) | |
| CN101620572B (en) | Nonvolatile memory and control method | |
| CN101556555B (en) | Block managing method for flash memory as well as controller and storage system thereof | |
| CN101702139B (en) | Method and device for accessing data of Nand flash memory | |
| US20140328127A1 (en) | Method of Managing Non-Volatile Memory and Non-Volatile Storage Device Using the Same | |
| CN106815152A (en) | A kind of method for optimizing page level flash translation layer (FTL) | |
| CN101414282B (en) | Average abrasion method and controller using the same | |
| KR20120055707A (en) | Memory system | |
| CN101499315B (en) | Average abrasion method of flash memory and its controller | |
| CN102122531A (en) | Method for improving stability in use of large-capacity solid state disk | |
| CN107861884B (en) | Method for improving cross-page memory address mapping efficiency in NAND flash memory | |
| CN100481267C (en) | Method for using nonvolatile memory and electronic apparatus thereof | |
| CN115373591A (en) | Command scheduling in a memory subsystem according to a selected scheduling order | |
| CN107678685A (en) | The key assignments memory management method of store path optimization based on flash memory | |
| CN101216806B (en) | Data updating method and device | |
| CN101739350B (en) | Memory storage device and control method thereof | |
| CN110275678B (en) | STT-MRAM-based solid state memory device random access performance improvement method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090422 Termination date: 20160809 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |