CN100474552C - Method for manufacturing element substrate and supporting apparatus for the substrate - Google Patents
Method for manufacturing element substrate and supporting apparatus for the substrate Download PDFInfo
- Publication number
- CN100474552C CN100474552C CNB2006101641272A CN200610164127A CN100474552C CN 100474552 C CN100474552 C CN 100474552C CN B2006101641272 A CNB2006101641272 A CN B2006101641272A CN 200610164127 A CN200610164127 A CN 200610164127A CN 100474552 C CN100474552 C CN 100474552C
- Authority
- CN
- China
- Prior art keywords
- substrate
- mentioned
- chuck
- resistivity value
- minimum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Abstract
In a prescribed processing performed on the substrate where a fault due to the charge occurs, electrostatic charge of a substrate is prevented, current flowing at the time of removing a charge from the substrate is controlled so that it does not exceed a prescribed value, yield of an object which is manufactured is improved as a result. A substrate holding device of the invention is provided with a chuck 101 holding the substrate 201, and a chuck support 104 supporting the chuck 101. A part whose specific resistance value is the lowest in the contact part of the chuck 101 with the substrate 201 is formed of a material whose specific resistance value is 10<5> to 10<10> Omega cm. The part of the lowest specific resistance value is grounded through the chuck support 104.
Description
Technical field
The present invention relates to the manufacture method and the substrate holding apparatus of component substrate.
Background technology
Thin-film transistor) in recent years, use glass (glass) substrate of insulating properties in the manufacturing of semiconductor device and liquid crystal indicator etc., on this substrate, formed TFT (Thin Film Transistor: electronic device (device) such as.When on substrate, forming electronic device, for example, use photoetching process (photolithographic method).In photoetching process, for example, (wet etching) carries out composition (patterming) with wet etching.
In the wet etching operation, on the predetermined film that figure (pattern) forms, form diaphragm (resist (resist)).And, remove the place that does not have diaphragm with the soup of acid etc.Then, fully remove unnecessary acid with flushing (rinse) liquid.This flushing liquor mainly uses pure water.That is, wash for the soup on the flush away substrate.The electronic device that forms on the substrate, often stacked a plurality of layer and constituting.Thereby, carry out repeatedly composition with above-mentioned photoetching process, corresponding with it, repeatedly wash with flushing liquor.At this moment, because the friction of the pure water of the glass substrate of insulating properties and insulating properties produces static.The problem that makes the electronic device generation electrostatic breakdown that forms because of the electric charge of this generation on substrate is arranged.
In the past, the method as solving such problem for example, had proposed to import carbon dioxide (carbon dioxide gas) etc. in pure water in patent documentation 1, so that the technology that its resistivity value descends.In addition, in patent documentation 2, proposed to constitute the chuck (chuck) that keeps substrate, made the technology of charge discharge charged on the substrate by this chuck with conductive material.And then, in patent documentation 3, become predetermined scope by sheet resistance value and the resistivity value (the volume intrinsic resistance value in the document) of adjusting the chuck that make to keep substrate, thus prevent electrostatic breakdown and use in the adhering to of dust etc.
[patent documentation 1] spy opens flat 9-1093 communique
[patent documentation 2] spy opens the 2003-92343 communique
[patent documentation 3] spy opens the 2000-195932 communique
As patent documentation 1 is disclosed, in order in pure water, to import carbon dioxide etc., must improvement pure water supply arrangement, this needs the cost (cost) of great number.And, need the resistivity value of control pure water, there is the so-called problem that the managerial restriction of process (process) takes place.And in photomechanical developing procedure, the pure water rinsing liquid after the development treatment uses the pure water that has imported carbon dioxide, and this can make alkali (alkalis) concentration of developer solution sharply descend.Therefore, can produce the residue of resist, have the problem that becomes the figure poor prognostic cause.
When using patent documentation 2 disclosed methods, owing to form chuck with conductive material, so the situation of electric charge charged on substrate along the chuck deep discharge arranged.The electric current that flows when having what is called because of this discharge destroys the problem of the electronic device that forms on substrate.In addition, because resistivity value is too low, equally also there be the situation of electric charge charged on the substrate along the chuck deep discharge in patent documentation 3 disclosed chucks.
Summary of the invention
The present invention is that background is developed with above-mentioned situation, its purpose is, in that bad substrate is implemented in the operation of predetermined process because of electric charge produces to meeting, suppress the charged of this substrate, and control the electric current that makes flowing and be no more than predetermined value when this substrate is removed electric charge, the result can improve the rate of finished products of the device of manufacturing.
Substrate holding apparatus of the present invention has chuck that keeps substrate and the chuck support member that supports above-mentioned chuck, with 10
5Ω cm～10
10The material of Ω cm resistivity value forms the minimum part of resistivity value in above-mentioned chuck and the contact site above-mentioned substrate, and the minimum part of above-mentioned resistivity value is by above-mentioned chuck support member ground connection.Therefore, implementing to prevent that this substrate is charged in the operation of predetermined processing, and can control the electric current that makes when this substrate is removed electric charge, flowing and be no more than predetermined value bad substrate takes place because of electric charge.Thereby the result can seek to improve the rate of finished products of the device of manufacturing.
Here, the part that above-mentioned resistivity value is minimum preferably is used in the material that has mixed carbon nano-tube (carbon nano tube) in the insulating properties material and forms.Therefore, can adjust resistivity with the blending ratio of the carbon nano-tube of mixing in the insulating properties material.And, owing to be carbon nano-tube, can realize the resistivity of hope with few mixing ratio.
And preferably the fiber alignment of above-mentioned carbon nano-tube is on direction roughly, and the part that above-mentioned resistivity value is minimum has the anisotropy of electricity.Therefore, can be only form current path (path) in the direction of necessity, the ratio that can make the carbon nano-tube of mixing in the insulating properties material still less.
Preferably above-mentioned insulating properties material is in order in Merlon (polycarbonate), fluorine (fluorine) resin and the vinyl chloride (vinyl chloride) being that the material of principal component forms more than at least a kind.If Merlon then can mix carbon nano-tube easily.If fluororesin then can suppress charged under the situation that keeps glass substrate with above-mentioned chuck.If vinyl chloride then can be processed easily.
And, preferably above-mentioned support portion keeps the face of face opposition side to support above-mentioned chuck above-mentioned chuck with substrate, in the minimum part of above-mentioned resistivity value, the resistivity value of the direction parallel with above-mentioned substrate is bigger than the resistivity value of the direction vertical with above-mentioned substrate.Therefore, substrate is electrically connected with electroconductive member along chuck, and can make chuck and with other members insulation of its side butt.
The manufacture method of component substrate of the present invention is the manufacture method that is formed with the component substrate of electronic component on this substrate, keep above-mentioned substrate by chuck, so that the charged particles to substrate is removed electricity, wherein the minimum part of resistivity value is 10 in the contact site of this chuck usefulness and above-mentioned substrate
5Ω cm～10
10The material of the resistivity value of Ω cm forms, and handles this substrate under the state that keeps above-mentioned substrate with above-mentioned chuck.Therefore, in the operation that meeting is taken place because of electric charge bad substrate enforcement predetermined process, can prevent that this substrate is charged, and can control the electric current that makes flowing when this substrate is removed electric charge and be no more than predetermined value that the result can improve the rate of finished products of the device of manufacturing.
Here, the part that above-mentioned resistivity value is minimum preferably is used in the material that mixes carbon nano-tube in the insulating properties material and forms.Therefore, can adjust resistivity with the blending ratio of the carbon nano-tube of mixing in the insulating properties material.And, owing to be carbon nano-tube, can realize the resistivity of hope with few mixing ratio.
And preferably the fiber alignment of above-mentioned carbon nano-tube is on direction roughly, and the part that above-mentioned resistivity value is minimum has the anisotropy of electricity.Therefore, can be only form current path in the direction of necessity, the ratio that can make the carbon nano-tube of mixing in the insulating properties material still less.
And above-mentioned substrate is the insulating properties substrate, is keeping with above-mentioned chuck under the state of above-mentioned substrate, can clean this substrate with pure water.Therefore, the unfavorable condition in the time of avoiding using beyond the pure water as detergent remover can be removed the electric charge that the friction because of the pure water of insulating properties substrate and insulating properties produces suitably.
Electroconductive member keeps the face of face opposition side to keep above-mentioned chuck above-mentioned chuck with substrate, charged particles to above-mentioned substrate is removed by above-mentioned electroconductive member, in the minimum part of above-mentioned resistivity value, preferably make the resistivity value of the direction parallel bigger than the resistivity value of the direction vertical with above-mentioned substrate with above-mentioned substrate.Therefore, substrate is electrically connected with electroconductive member along chuck, and can make chuck and with other members insulation of its side butt.
By the present invention, in the operation that meeting is taken place because of electric charge bad substrate enforcement predetermined process, can prevent the charged of this substrate, and can control the electric current that makes flowing when this substrate is removed electric charge and be no more than predetermined value that the result can improve the rate of finished products of the device of manufacturing.
Description of drawings
Fig. 1 is the constructed profile of the liquid crystal panel of embodiment of the present invention.
Fig. 2 is the schematic plan view of the chuck of embodiment of the present invention.
Fig. 3 is the chuck of embodiment of the present invention and the constructed profile of lining processor.
Fig. 4 is the figure that schematically is illustrated in the state of the material that mixes in the chuck of embodiment of the present invention.
Fig. 5 is the curve chart of expression resistivity value with respect to the amount of carbon nano-tube that Merlon contained in the chuck of embodiment of the present invention and powdered graphite.
Fig. 6 is the figure that schematically represents the electrostatic charging amount determining device of embodiment of the present invention.
Fig. 7 is the figure that schematically is illustrated in the state of the material that mixes in the chuck of embodiment of the present invention.
Embodiment
Below, explanation can be used embodiments of the present invention.For making clear of illustrating, following record and accompanying drawing are suitably omitted and simplify.In each accompanying drawing, same key element is added prosign, omits repeat specification as required.For following execution mode, in the manufacturing process of liquid crystal indicator, be that example describes with the operation that forms array (array) substrate of TFT element and pixel electrode etc. on the glass substrate that is manufactured on insulating properties.The overall structure of liquid crystal panel (panel) at first, is described with Fig. 1.
Fig. 1 is expression TN (Twisted Nematic: the constructed profile of the structure of the active matrix of type (type) (active matrix) liquid crystal panel 200 twisted nematic) as an example of liquid crystal indicator.In the following description, be that example describes with the liquid crystal indicator of active matrix, TN type, but the present invention also can be applied to the liquid crystal panel that IPS (In-Plane Switching: switch in the plate) type and passive (passive) drive.As shown in Figure 1, liquid crystal panel 200 has TFT (Thin Film Transistor: thin-film transistor) array substrate 201, opposed substrate 202, liquid crystal 203, TFT204, pixel electrode 205, public (common) electrode 206, colour filter (color filter) 207, black matrix (black matrix) 208 and alignment films 209.TFT204 has grid (gate) electrode 204a, source (source) electrode 204b and leakage (drain) electrode 204c.Present embodiment is characterised in that to have following operation, in LCD panel manufacturing method shown in Figure 1, forms TFT204 and pixel electrode 205 etc. on tft array substrate 201.
In addition, on opposed substrate 202, form the colour filter 207 of public electrode 206 and R (red), G (green), B (indigo plant), black matrix 208.Public electrode 206 is transparent substrates of the brachmorphy shape that forms on the roughly whole surface of opposed substrate 202 opposed to each other with pixel electrode 205.As public electrode 206, use ITO (Indium Tin Oxide: etc. nesa coating tin indium oxide).Between tft array substrate 201 and the opposed substrate 202, be maintained in predetermined interval with not shown bead (bead) liner (spacer), column liner etc.
Form respectively along the alignment films 209 of predetermined direction orientation at tft array substrate 201 and 202 opposed of opposed substrate.The encapsulant of the frame-like that tft array substrate 201 and opposed substrate 202 usefulness are not shown is bonding.In the space that forms by tft array substrate 201, opposed substrate 202 and encapsulant, enclose liquid crystal 203.Be orientated along predetermined direction by the alignment films 209 that on substrate separately, is provided with by the liquid crystal 203 of these two substrate clampings.By alignment films 209 surfaces that on tft array substrate 201 and opposed substrate 202, form of friction (rubbing), thereby provide the liquid crystal aligning function of alignment films 209 as described above.
By on tft array substrate 201, conductive layer and insulating barrier etc. carried out composition and carry out stacked, thereby carry out the formation of TFT204 in the liquid crystal panel 200 as described above and pixel electrode 205 etc.In the composition operation of each layer, use photoetching process.In photoetching process, carry out for example wet etching composition.Then, proceed to wash off the clean operation of the employed soup of etching (etching) with flushing liquor.Flushing liquor is mainly used pure water.Present embodiment is characterised in that chuck keeps tft array substrate 201 at least in above-mentioned clean operation.
Then, clean operation on 201 of the tft array substrates is described.Fig. 2 is illustrated in the plane graph that the substrate of cleaning the chuck 101 that keeps tft array substrate 201 in the operation keeps face.In Fig. 2, the tft array substrate 201 that is kept by chuck 101 dots.Fig. 3 represents the section shape and the lining processor 100 that uses this chuck 101 of the X-X portion of chuck shown in Figure 2 101.The chuck 101 of present embodiment has groove 102, air entry 103 and pipe arrangement 105.On the substrate maintenance face of chuck 101, form groove 102.Inside at groove 102 forms air entry 103.Pipe arrangement 105 is connected to one in chuck 101 inside, as vacuum exhaust with and use.
And as shown in Figure 3, the lining processor 100 of present embodiment has chuck 101, rotating shaft 104, nozzle (nozzle) 108, pure water feedway 109, rotating driving device 110 and vacuum suction device 111.Rotating shaft 104 keeps the central authorities of the face of face opposition side to be connected with chuck 101 with substrate.Nozzle 108 is supplied with the pure water that is used to clean to the substrate surface of the tft array substrate 201 that is kept by chuck 101.Supply with pure water from pure water feedway 109 to nozzle 108.110 pairs of rotating shafts 104 of rotating driving device are rotated driving.Carry out vacuum attraction with 111 pairs of pipe arrangement 105 inside of vacuum suction device.
It is circular that chuck 101 its substrates keep the shape of face, has the discoid or columned shape that predetermined thickness is arranged.Chuck 101 main materials are Merlon, are mixed with the carbon nano-tube of needle-like.Carbon nano-tube becomes current path in Merlon inside, and the resistivity value of chuck 101 is descended.Therefore, can along chuck 101 remove because of and the static that on tft array substrate 201, produces of the friction of pure water.In carbon nano-tube inside, because the machine direction of carbon nano-tube is (random) at random, so chuck 101 becomes electric isotropic member as a whole.
On the substrate maintenance face of chuck 101, form the groove 102 of a plurality of concentric circles.In the present embodiment, form 2 grooves 102 of size with concentric circles.And, form a plurality of air entries 103 in the inside of groove 102 with predetermined interval.Each air entry 103 is connected with the pipe arrangement 105 of chuck 101 inside.The pipe arrangement 105 that is connected with each air entry 103 connects into 1 in chuck 101 inside.Be connected at the peristome 106 of the inner pipe arrangements 105 that connect of chuck 101 with the central authorities that are arranged on chuck 101 and face substrate maintenance face opposition side.
In the central authorities with face substrate maintenance face opposition side chuck 101 rotating shaft 104 is set.In other words, chuck 101 is supported by rotating shaft 104.Rotating shaft 104 is cylindrical structural members, and the substrate that is configured to its Cylindorical rod and tft array substrate 201 keeps face vertical.The cavity of rotating shaft 104 inside is connected with peristome 106, so the cavity of rotating shaft 104 inside is connected with pipe arrangement 105.The cavity of rotating shaft 104 inside becomes exhaust outlet 107 in the end with chuck 101 opposition sides.Thereby, in order to carry out vacuum attraction, keep the cavity of sufficient hermetic connection opening portion 106 and rotating shaft 104 inside from 107 pairs of pipe arrangement 105 inside of exhaust outlet.
Rotating shaft 104 usefulness resistivity values and chuck 101 are identical or form than chuck 101 low blanks.And, on rotating shaft 104, connect rotating driving device 110, on exhaust outlet 107, connect vacuum suction device 111.Therefore, rotating shaft 104 becomes ground state.That is, charged electric charge discharges along chuck 101 and rotating shaft 104 on tft array substrate 201.Also have, chuck 101 and rotating shaft 104 must not be members separately, as long as said structure is arranged, can be shaped as one yet.
Make rotating shaft 104 rotations make chuck 101 rotations by rotating driving device 110, and make tft array substrate 201 rotations that keep on the chuck 101.Therefore, the pure water of having cleaned on the tft array substrate 201 is thrown away, tft array substrate 201 is rotated (spin) drying.Like this, owing to chuck 101 also uses as circulator (spinner) chuck, so, the most handy discoid or cylindric formation.
Having placed on the face that is formed with groove 102 of chuck 101 under the state of tft array substrate 201, carry out vacuum attraction from exhaust outlet 107 with vacuum suction device 111.Therefore, by pipe arrangement 105 and air entry 103, tft array substrate 201 is adsorbed by groove 102.That is, keep tft array substrate 201 by chuck 101.
The substrate that nozzle 108 is arranged on chuck 101 keeps the face side.Nozzle 108 is connected with pure water feedway 109, supplies with pure water from pure water feedway 109 to nozzle 108.Nozzle 108 will offer tft array substrate 201 surfaces that kept by chuck 101 from the pure water that pure water feedway 109 is supplied with, clean substrate surface.
At this moment, produce static owing to the tft array substrate 201 of insulating properties and the friction of pure water.But, owing to tft array substrate 201 is kept by chuck 101, so the electric charge that produces on tft array substrate 201 discharges along chuck 101, and does not make on the tft array substrate 201 charged.Below, removing of electric charge on the tft array substrate 201 that chuck 101 causes is described.
The resistivity value of chuck 101 is 10
5Ω cm above 10
10Below the Ω cm.Using resistivity value less than 10
5The material of Ω cm forms under the situation of chuck 101, on chuck 101 surfaces or the movement of electric charges of chuck 101 inside too fast.Therefore, on tft array substrate 201 charged electric charge along chuck 101 deep discharges.At this moment, big electric current flows on tft array substrate 201.Existence destroys on tft array substrate 201 situation of the electronic device that forms because of this electric current, so not preferred.
With resistivity value than 10
10The high material of Ω cm forms under the situation of chuck 101, on chuck 101 surfaces or chuck 101 internal charge move hardly.Therefore, electric charge charged on the tft array substrate 201 does not discharge, and tft array substrate 201 is still charged.According to the CHARGE DISTRIBUTION on the tft array substrate 201, electric charge moves to low part from the high part of voltage and flows through electric current.Existence destroys on tft array substrate 201 situation of the electronic device that forms because of this electric current, so not preferred.
If the resistivity value of chuck 101 is 10
5Ω cm above 10
10Below the Ω cm, then on chuck 101 surfaces or chuck 101 internal charge slowly move.Therefore, because charged electric charge slowly discharges on the tft array substrate 201, so, there is not big electric current to flow on the tft array substrate 201.Thereby, the destruction that can prevent the electronic device of formation on tft array substrate 201.For the resistivity value of chuck 101, the mixing ratio by being adjusted at the carbon nano-tube of mixing in the Merlon as main material, be the weight rate of carbon nano-tube to Merlon, thus, can adjust to the value of hope.
By as present embodiment, using the structure of removing electric charge along chuck 101, thus as long as tft array substrate 201 is kept by chuck 101, just the electric charge that can obtain producing on the substrate all the time remove electric effect, can prevent that substrate is charged.Though the carried charge (stripping charge) of substrate is bigger in the time of at the bottom of chuck 101 peeling liners, if the chuck of present embodiment 101, then the electric charge of Chan Shenging will instantaneously be transmitted on the chuck 101 and removed.Thereby, also can be suppressed at the charged of when chuck 101 is peeled off tft array substrate 201 substrate.
In addition, the main material of chuck 101 for example, also can use insulative resins such as Teflon (Teflon) fluororesin such as (registered trade marks) and vinyl chloride except Merlon.Merlon mixes carbon nano-tube easily.Charged few when (registered trade mark) and glass contact in the Teflon.Vinyl chloride cheapness, processability are good.Like this, because these materials each have advantage, so can suit to select.In order to form current path in main material inside, the material of mixing for example, also can use graphite (graphite) and carborundum conductive carbide such as (carborundum) except carbon nano-tube.Owing to the mixed conductivity carbide forms path, resistivity value is descended.By adjusting its mixing ratio, resistivity value can be adjusted in the suitable scope.
Here, main material is being mixed under the situation of granular conductive carbide, what become current path is separately particle.Shown in Fig. 4 (a), granular conductive carbide is dispersed in the main material.In order to form current path whole resistivity value is descended,, need more conductive carbide for main material.In contrast to this, the molecule of carbon nano-tube has elongated fibrous structure shown in Fig. 4 (b), and this fiber becomes current path.Thereby the addition of using the situation that forms current path than mixing granular material to lack also can make resistivity value descend.
Fig. 5 is illustrated in the Merlon example situation, mixing ratio (weight %) and resistivity value variation of the situation of mixing carbon nano-tube and admixed graphite powder.According to above-mentioned explanation like that, the machine direction of carbon nano-tube is at random, the Merlon that contains carbon nano-tube is electric isotropic member.As the graphical representation of Fig. 5 as can be known, for the resistivity value Merlon is made as from 10
5Ω cm to 10
10The scope of Ω cm for powdered graphite, approximately needs the ratio of 24～28 weight %, in contrast to this, for carbon nano-tube, can be about 10～15 weight % ratios.Also have, be not limited to the scope of above-mentioned weight ratio for the mixing ratio of the suitable conductive carbide of main material, the resistivity value of the actual material that has mixed can be used from 10
5Ω cm is to becoming 10
10Ratio during Ω cm is stipulated.
Behind the composition of the electronic device of using wet etching on the tft array substrate 201, clean and Rotary drying with the pure water rinsing that above-mentioned lining processor 100 is implemented substrate surface.Then, when measuring the electrostatic belt electric weight of the tft array substrate 201 after handling, carried charge is about tens of V (volt (volt)).The electronic device that forms on the tft array substrate does not produce the problem of electrostatic breakdown.The resistivity value of chuck 101 used herein is 10
7Ω cm.
Fig. 6 represents the assay method of above-mentioned used electrostatic belt electric weight.Tft array substrate 201 promptly is set on the electrostatic measuring device 300 after above-mentioned clean processing.Tft array substrate 201 is by being provided with a plurality of non-conductive liners 302 on the surface of the ground plane 301 that becomes earthing potential, Yi Bian do one's utmost to make the butt area to diminish, Yi Bian to leave the state configuration of 1mm equably from ground plane 301.And, with the electrostatic belt electric weight on static measuring transducer (sensor) 303 and potentiometer 304 mensuration tft array substrates 201 surfaces.
As a comparative example, use and the same method of method shown in Figure 6, (Poly Phenylene Sulfide: polyphenylene sulfide) 101 pairs of tft array substrates 201 of Zhi chuck were cleaned the electrostatic belt electric weight after handling to mensuration with former normally used PPS.Comparative example is 600～1kV.At this moment produce electrostatic breakdown in the electronic device that on substrate, forms.Like this, the carried charge of the tft array substrate 201 after the substrate processing of use present embodiment and former comparative example relatively are reduced to below 1/10th.In addition, do not see the generation electrostatic breakdown in the electronic device that on substrate, forms yet, thereby clearly seen the electric effect of removing of present embodiment.
Like this, by in the clean operation of tft array substrate 201, the chuck that keeps this substrate being used the chuck 101 of present embodiment, thereby can remove electric charge charged on the substrate by chuck.In addition, at this moment can make the electric current that on tft array substrate 201, flows become the electric current that does not destroy the electronic device degree that on substrate, forms.Thereby, can prevent from the electrostatic breakdown of the electronic device that on substrate, forms to improve rate of finished products.
In addition, in the above description, the resistivity value of establishing chuck 101 integral body is 10
5Ω cm above 10
10Describe below the Ω cm.That is, preferably with a kind of material forming chuck 101 integral body that above-mentioned resistivity value is arranged.Therefore, can be with chuck 101 as 1 component forming.But, keeping tft array substrate 201 with member with above-mentioned resistivity value, also can obtain and above-mentioned same effect by this member ground connection.Thereby, if the resistivity value of the contact site that contacts with tft array substrate 201 of chuck 101 is 10
5Ω cm above 10
10Below the Ω cm, then can obtain and above-mentioned same effect.For example, if with having 10
10The other materials of the resistivity value that Ω cm is following forms the part of the substrate opposition side of chuck 101, and chuck 101 then also can obtain and above-mentioned same effect by this position ground connection.
And, be not to make the whole of contact site of this chuck 101 and tft array substrate 201 have 10
5Ω cm above 10
10The resistivity value that Ω cm is following is as long as the minimum part of resistivity value is 10 in this contact site
5Ω cm above 10
10The following resistivity value of Ω cm gets final product.Therefore, because the charged particles of tft array substrate 201 keeps face mainly along 10 at the substrate of chuck 101
5Ω cm above 10
10The part of the resistivity value that Ω cm is following is removed electricity, so, can obtain and above-mentioned same effect.For example, can be with resistivity value than 10
10The insulating material that Ω cm is big forms the peripheral part of chuck 101, with 10
5Ω cm above 10
10The following material of Ω cm only forms central portion.
In the above description, the example that chuck 101 is rotated axle 104 supports and uses as rotary chuck has been described, but chuck 101 not necessarily must be a rotary chuck.That is, can not rotating shaft 104 also, but only use the support member support chuck 101 of support chuck 101.At this moment, the supporting member of support chuck 101 is identical or form than chuck 101 low blanks with resistivity value and chuck 101, if this supporting member ground connection then also can obtain and above-mentioned same effect.That is, preferably supporting member forms with conductor.And if this supporting member is a cylindrical member, its inner cavity is connected with peristome 106, then can carry out vacuum attraction with 111 pairs of pipe arrangement 105 inside of vacuum suction device.
Execution mode 2
In the present embodiment, the example that makes this hybrid mode have the example of feature when mixing carbon nano-tube in as the insulative resin of the main material of chuck 101 and make the resistivity value of chuck 101 have feature is described.For attached with the structure of the same symbol of execution mode 1, expression and execution mode 1 identical or considerable part, omission explanation.
Fig. 7 is the figure that schematically illustrates as the carbon nanotube molecule state in the Merlon of the main material of chuck 101.As shown in the figure, in Merlon the carbon nanotube molecule general alignment on same direction.Therefore, chuck 101 has anisotropy, easily flows at carbon nano-tube orientation (low resistance direction) fluid capacitance that powers on, and is difficult to flow at other directional currents.
With reference to Fig. 3, the electric charge that produces on tft array substrate 201 is along chuck 101 and rotating shaft 104, and the rotating driving device 110 or the vacuum suction device 111 that are used as earth point remove.That is, on chuck 101, if move the rotating shaft 104 that electric charge can keep face to form to the face of opposition side from substrate at least, then just can except that.That is to say, can keep the direction of face to move along the substrate that is approximately perpendicular to chuck 101 at least.Thereby in the inside of chuck 101, the current path that forms in the direction that is parallel to substrate maintenance face becomes insignificant current path.That is to say that the conductive carbide such as carbon nano-tube of usefulness become useless in order to form this current path.
Thereby the anisotropy of utilizing the arrangement by carbon nano-tube shown in Figure 7 to cause only keeps the direction of face to form current path being approximately perpendicular to substrate in chuck 101.Therefore, the main material that more can further reduce chuck 101 is amounts of the carbon nano-tube of necessity.Therefore carbon nano-tube can reduce the cost (cost reduction) of chuck 101 owing to be at high price.Here, arrange the carbon nano-tube mixed and have under the anisotropic situation in chuck 101, carbon nano-tube is arranged, and the resistivity value that become the direction of current path, promptly becomes the direction of most low-resistance is 10
5Ω cm above 10
10Below the Ω cm.Therefore, can remain untouched remains on the effect of execution mode 1 explanation, reduces the amount of necessary carbon nano-tube.
In Fig. 3, in order to remove electricity, chuck 101 necessary and rotating shaft 104 conductings.That is, keeping at the substrate of chuck 101 must the formation current path between the face (below among Fig. 3) of face and its opposition side.In contrast to this, under the situation that must make with other members of the side butt of chuck 101 and chuck 101 insulation, utilize anisotropy shown in Figure 7.Therefore, can keep face to the face of opposition side, form current path from the substrate of chuck 101, make chuck 101 the side and with the member insulation of this side butt.
In the above description, make chuck 101 have anisotropy by arranging nanotube.Owing to can realize the anisotropy of electricity with the fiber alignment of carbon nano-tube, so chuck 101 preferably uses the material that has mixed carbon nano-tube in the insulating properties material.But, also can make chuck 101 that anisotropy be arranged with additive method.Therefore, can make chuck 101 ground connection, and meanwhile make chuck 101 and with other members insulation of its butt.As in execution mode 1 explanation, by make chuck 101 with the contact site of tft array substrate 201 or only make the resistivity value lowermost portion in the contact site have anisotropy, thereby also can obtain effect as described above.
In the above description, as shown in Figure 3, because to be example, so preferably have the anisotropy of electricity and make direction become low resistance perpendicular to substrate in the opposition side support chuck 101 of substrate and the situation of ground connection.But, not necessarily be limited to opposition side support chuck 101 and ground connection at substrate.Thereby, can be according to the position relation of the member of substrate that is kept by chuck 101 and support chuck 101, the suitable direction of selecting the electrical anisotropy of chuck 101.
Above explanation is illustrated embodiments of the present invention, but the present invention is not limited to above-mentioned execution mode.So long as those of ordinary skill in the art, just can easily change within the scope of the invention, append, each key element of the above-mentioned execution mode of conversion.For example, in the above description, be that example is illustrated with the clean operation behind the wet etching in the photoetching process.But, be not limited thereto, owing to so long as clean the operation of insulating properties substrate, will produce the problem same, so just can solve this problem by using the present invention with above-mentioned explanation with pure water.As other examples of insulating properties substrate, except the glass substrate that illustrated, for example also can consider the serial substrate of pottery (ceramic) etc.
In addition,, cleaning with the flushing liquor of pure water in the clean operation of insulating properties tft array substrate 201 for above-mentioned explanation, the static that produces with friction because of the pure water of the substrate of insulating properties and insulating properties to remove electricity be that problem is illustrated.But, even with under the situation of nonisulated property substrates such as Semiconductor substrate or under the situation with the nonisulated property liquid beyond the pure water, in avoiding the bad purpose that causes by the static generation, also can be in response to obtain effect with the present invention.
For example, even make under the situation of semiconductor device at formation electronic device on the Semiconductor substrate, the charged insulation breakdown that reaches the electronic device that causes thus of Semiconductor substrate also can become problem.In addition, be not limited to the friction of substrate and pure water, in operation, also consider to make substrate charged because of the friction of these liquid and substrate with the liquid handling substrate beyond the pure water of developer solution and etching solution etc.In such situation, the chuck of the application of the invention is as the member that keeps substrate, thus just can not destroy the electronic device ground that forms on the substrate to substrate on charged electric charge remove.
Thereby, though chuck 101 is illustrated as the member that keeps tft array substrate 201 in the clean operation of tft array substrate 201, be not limited thereto.For example, in the operation of the electronic device that on tft array substrate 201, forms of etching work procedure etc. with glued joint with encapsulant in all manufacturing processes of liquid crystal panels such as operation of tft array substrate 201 and opposed substrate, can use as the chuck that keeps tft array substrate 201.Therefore, can not destroy on tft array substrate 201 the electronic device ground that forms and the electric charge of the generation of static electricity in the manufacturing process be removed electric, can prevent that substrate is charged.
Claims (11)
1. substrate holding apparatus is characterized in that having:
The chuck that keeps substrate; And
Support the chuck support member of above-mentioned chuck,
With 10
5Ω cm～10
10The material of the resistivity value of Ω cm forms the minimum part of resistivity value in above-mentioned chuck and the contact site above-mentioned substrate,
The minimum part of above-mentioned resistivity value is by above-mentioned chuck support member ground connection.
2. as the substrate holding apparatus of claim 1 record, it is characterized in that,
The part that above-mentioned resistivity value is minimum is used in the material that mixes carbon nano-tube in the insulating properties material and forms.
3. as the substrate holding apparatus of claim 2 record, it is characterized in that,
The fiber alignment of above-mentioned carbon nano-tube is on direction roughly, and the part that above-mentioned resistivity value is minimum has the anisotropy of electricity.
4. as the substrate holding apparatus of claim 2 or 3 records, it is characterized in that,
Above-mentioned insulating properties material is in order to forming for the material of principal component more than a kind in Merlon, fluororesin and the vinyl chloride at least.
5. as the substrate holding apparatus of each record of claim 1 to 3, it is characterized in that,
Above-mentioned chuck support member keeps the face of face opposition side to support above-mentioned chuck above-mentioned chuck with substrate,
In the minimum part of above-mentioned resistivity value, the resistivity value of the direction parallel with above-mentioned substrate is bigger than the resistivity value of the direction vertical with above-mentioned substrate.
6. the manufacture method of a component substrate is formed with electronic component on this substrate, it is characterized in that,
Keep above-mentioned substrate by chuck so that the charged particles of substrate is removed electricity, wherein in this chuck and the part resistivity value that resistivity value is minimum in the contact site of above-mentioned substrate be 10
5Ω cm～10
10The material of Ω cm forms,
Under the state that keeps above-mentioned substrate with above-mentioned chuck, handle this substrate.
7. as the manufacture method of the component substrate of claim 6 record, it is characterized in that,
The part that above-mentioned resistivity value is minimum is used in the material that mixes carbon nano-tube in the insulating properties material and forms.
8. as the manufacture method of the component substrate of claim 7 record, it is characterized in that,
The fiber alignment of above-mentioned carbon nano-tube is on direction roughly, and the part that above-mentioned resistivity value is minimum has the anisotropy of electricity.
9. as the manufacture method of the component substrate of each record of claim 6 to 8, it is characterized in that,
Above-mentioned substrate is the insulating properties substrate,
Keeping with above-mentioned chuck under the state of above-mentioned substrate, cleaning this substrate with pure water.
10. as the manufacture method of the component substrate of each record of claim 6 to 8, it is characterized in that,
Electroconductive member keeps the face of face opposition side to keep above-mentioned chuck above-mentioned chuck with substrate,
The charged particles of above-mentioned substrate is removed electricity by above-mentioned electroconductive member,
In the minimum part of above-mentioned resistivity value, the resistivity value of the direction parallel with above-mentioned substrate is bigger than the resistivity value of the direction vertical with above-mentioned substrate.
11. the manufacture method as the component substrate of claim 9 record is characterized in that,
Electroconductive member keeps the face of face opposition side to keep above-mentioned chuck above-mentioned chuck with substrate,
The charged particles of above-mentioned substrate is removed electricity by above-mentioned electroconductive member,
In the minimum part of above-mentioned resistivity value, the resistivity value of the direction parallel with above-mentioned substrate is bigger than the resistivity value of the direction vertical with above-mentioned substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005296820A JP2007109732A (en) | 2005-10-11 | 2005-10-11 | Manufacturing method of element substrate and substrate holding device |
| JP2005296820 | 2005-10-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1956162A CN1956162A (en) | 2007-05-02 |
| CN100474552C true CN100474552C (en) | 2009-04-01 |
Family
ID=38035388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101641272A Expired - Fee Related CN100474552C (en) | 2005-10-11 | 2006-10-11 | Method for manufacturing element substrate and supporting apparatus for the substrate |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2007109732A (en) |
| KR (1) | KR100834479B1 (en) |
| CN (1) | CN100474552C (en) |
| TW (1) | TW200729389A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101044554B1 (en) * | 2009-03-31 | 2011-06-28 | (주)탑나노시스 | Working stage with antistatic treatment |
| KR101171316B1 (en) | 2010-04-06 | 2012-08-10 | (주)탑나노시스 | Method for repairing working stage with CNT antistatic treatment |
| KR101237869B1 (en) * | 2010-10-22 | 2013-02-27 | (주)탑나노시스 | Method for manufacturing working stage with CNT antistatic treatment and the working stage with CNT antistatic treatment |
| TWI669794B (en) * | 2018-09-27 | 2019-08-21 | 頎邦科技股份有限公司 | Method and device for compression bonding of chip to substrate |
| CN111970840B (en) * | 2020-08-28 | 2021-05-18 | 李钟波 | Printed circuit board etching device |
| JPWO2022138662A1 (en) * | 2020-12-23 | 2022-06-30 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5460684A (en) * | 1992-12-04 | 1995-10-24 | Tokyo Electron Limited | Stage having electrostatic chuck and plasma processing apparatus using same |
| JPH09160401A (en) * | 1995-12-12 | 1997-06-20 | Canon Inc | Production of semiconductive elastic roller |
| EP1244730B1 (en) * | 1999-12-07 | 2007-02-28 | William Marsh Rice University | Oriented nanofibers embedded in polymer matrix |
-
2005
- 2005-10-11 JP JP2005296820A patent/JP2007109732A/en active Pending
-
2006
- 2006-09-20 TW TW095134785A patent/TW200729389A/en unknown
- 2006-10-02 KR KR1020060097013A patent/KR100834479B1/en not_active IP Right Cessation
- 2006-10-11 CN CNB2006101641272A patent/CN100474552C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007109732A (en) | 2007-04-26 |
| KR100834479B1 (en) | 2008-06-05 |
| KR20070040300A (en) | 2007-04-16 |
| CN1956162A (en) | 2007-05-02 |
| TW200729389A (en) | 2007-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100474552C (en) | Method for manufacturing element substrate and supporting apparatus for the substrate | |
| US6392735B1 (en) | Liquid crystal display apparatus with sealing element including conductive spacers | |
| US8284373B2 (en) | Liquid crystal display device and method of fabricating the same | |
| US7492436B2 (en) | Liquid crystal display device and method of fabricating the same | |
| CN100472813C (en) | Thin film transistor and method of fabricating the same | |
| CN1991479B (en) | Liquid crystal display device and method for fabricating the same | |
| CN101963717A (en) | Liquid crystal display panel and manufacturing method thereof | |
| CN101655646B (en) | Display device and manufacture method thereof | |
| CN104362156B (en) | A kind of display base plate, its method of testing and preparation method | |
| CN1858639A (en) | Liquid crystal display device and method for fabricating the same | |
| CN101582004B (en) | Method of manufacturing a coordinate detector | |
| CN1607442A (en) | Liquid crystal display panel and fabricating method thereof | |
| CN108490700A (en) | Electronic device and method for manufacturing the same | |
| CN101211050B (en) | Liquid crystal display device | |
| CN107037688A (en) | Base plate cleaning device and substrate-cleaning method used in photomask related substrate | |
| CN104882452B (en) | A kind of manufacture method of array base palte, display panel and array base palte | |
| CN1797160A (en) | Liquid crystal display device and fabricating method thereof | |
| CN104820304A (en) | Liquid crystal characteristic test device and test method, display panel and manufacturing method thereof | |
| CN108196410A (en) | A kind of display base plate, display panel and preparation method thereof | |
| CN107919321A (en) | FFS type thin-film transistor array base-plates and preparation method thereof | |
| CN104091804B (en) | A kind of array base palte and preparation method thereof, display device | |
| WO2016112688A1 (en) | Array substrate and manufacturing method thereof, and display apparatus | |
| CN102236190A (en) | Touch type liquid crystal panel, manufacturing method thereof and liquid crystal display | |
| KR101366983B1 (en) | Method for fabricating a liquid crystal display | |
| KR20040041266A (en) | Apparatus of ionizing and method of controling the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1105241 Country of ref document: HK |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1105241 Country of ref document: HK |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090401 Termination date: 20161011 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |