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半导体装置

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Publication number
CN100452375C
CN100452375C CN 200610110141 CN200610110141A CN100452375C CN 100452375 C CN100452375 C CN 100452375C CN 200610110141 CN200610110141 CN 200610110141 CN 200610110141 A CN200610110141 A CN 200610110141A CN 100452375 C CN100452375 C CN 100452375C
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CN
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Application number
CN 200610110141
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English (en)
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CN1913138A (zh )
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桥元伸晃
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精工爱普生株式会社
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Abstract

一种半导体装置,包括:半导体芯片(10);多个电极(14),其形成于半导体芯片(10),并沿着半导体芯片(10)的一条边(15)排列;树脂突起(20),其形成在半导体芯片(10)上,形状为沿着与边(15)的交叉方向延伸的形状;多个电连接部(30),其形成在树脂突起(20)上,并与电极(14)电连接。由此,提供一种可靠性高、且安装性优异的半导体装置。

Description

半导体装置

技术领域

本发明涉及一种半导体装置。

背景技术

为了实现电子部件的小型化,优选外形小的半导体装置。但是,随着 半导体装置作用的多样化,使得形成于半导体芯片的集成电路的高集成化 得到发展,与此相伴,半导体芯片的管脚数在持续增加。即,当前能够同 时满足半导体装置的小型化和集成电路的高集成化这两个要求的半导体 装置的开发正在盛行。

作为可以对应该要求的半导体装置,在半导体芯片上形成有布线的类

型的半导体装置正受到关注(参照日本特开平2—272737号公报)。在这 种类型的半导体装置中,由于可以使半导体装置的外形和半导体芯片的外 形大致相同,所以,可实现半导体装置的小型化。

但是,即使是这种半导体装置,也要求高的可靠性。并且,能够预料 到半导体装置越是小型化,安装该半导体装置就会变得越困难。

发明内容

本发明的目的在于提供一种可靠性高、且安装性优异的半导体装置。

(1)本发明的半导体装置,包括: 半导体芯片;

多个电极,其形成于所述半导体芯片,并沿着所述半导体芯片的一条 边排列;

树脂突起,其形成在所述半导体芯片上,成为沿着与所述边交叉的方 向延伸的形状;和

多个电连接部,其形成在所述树脂突起上,并与所述多个电极电连接; 所述半导体芯片的形成有所述电极的面呈长方形,所述边是所述长方形的

长边,所述多个电连接部沿着与所述边交叉的直线排列。根据本发明,可 以提供难以发生因迁移而引起电短路的半导体装置。另外,根据本发明, 可以提供通用性好、安装性优异的半导体装置。

(2) 在该半导体装置中,

所述树脂突起成为相对所述边倾斜延伸的形状。

(3) 在该半导体装置中, 所述树脂突起成为沿着与所述边正交的方向延伸的形状。

(4) 在该半导体装置中, 具有沿着所述边的方向配置的、相邻的两个以上的所述树脂突起。

(5) 在该半导体装置中, 还包括成为沿着所述边延伸的形状的其他树脂突起。

附图说明

图1是用于对釆用了本发明的实施方式所涉及的半导体装置进行说明 的图。

图2是用于对采用了本发明的实施方式所涉及的半导体装置进行说明 的图。

图3是用于对采用了本发明的实施方式所涉及的半导体装置进行说明 的图。

图4是用于对采用了本发明的实施方式所涉及的半导体装置进行说明的屈。

图5是用于对采用了本发明的实施方式所涉及的半导体装置进行说明 的图。

图6是用于对采用了本发明的实施方式的变形例所涉及的半导体装置 进行说明的图。

图7是用于对采用了本发明的实施方式的变形例所涉及的半导体装置 进行说明的图。

图中:1—半导体装置;2 —半导体装置;IO —半导体芯片;12 —集成 电路;14一电极;15—边;16 —钝化膜;20 —树脂突起;21—树脂突起;

22 —树脂突起;30—电连接部;31 —电连接部;32 —布线;40 —布线基板; 42 —基底基板;44一布线;50 —粘接剂。

具体实施方式

下面,参照附图对采用了本发明的实施方式进行说明。但是,本发明 并不限定于以下的实施方式。并且,本发明还包括将以下的实施方式以及 变形例自由组合后的方式。

图1〜图5是用于对采用了本发明的实施方式所涉及的半导体装置进 行说明的图。这里,图1是采用了本发明的实施方式所涉及的半导体装置

i的俯视图。另外,图2是图i的n—ii线剖面的局部放大图。

本实施方式所涉及的半导体装置包括半导体芯片10。半导体芯片10 例如可以是硅芯片。在半导体芯片10中可以形成集成电路12(参照图2)。 集成电路12的结构没有特别限定,例如可以包括晶体管等的有源元件, 或电阻、线圈、电容器等的无源元件。半导体芯片10的形成有集成电路 12的面(有源面)可以呈长方形(参照图1)。不过,半导体芯片10的 有源面也可以呈正方形(未图示)。

如图1以及图2所示,本实施方式所涉及的半导体装置包括多个电极 14。电极14形成在半导体芯片10上。电极14也可以形成在半导体芯片 IO的有源面上。电极14可以沿着半导体芯片10的一条边15排列。艮P, 电极14可以沿着半导体芯片10的有源面的一条边15排列。另外,在半 导体芯片10 (半导体芯片10的有源面)呈长方形的情况下,边15可以是 该长方形的长边。电极14也可以沿着半导体芯片IO的一条边排列成一列。 另外,电极14也可以沿着一条边排列成多列(未图示)。在半导体芯片 IO的有源面呈长方形的情况下,电极14可以沿着其两条长边(仅沿两条 长边)排列。但是,半导体装置还可以包括沿着半导体芯片10的有源面 的短边排列的电极(未图示)。半导体芯片10的电极可以避开半导体芯 片IO的有源面的中央部而仅形成在周缘部。或者,半导体芯片10的电极 也能够以面阵状形成在半导体芯片10的有源面(包括中央部的区域)。 此时,电极可以以栅格状形成为多行多列,也可以随机排列。即,本实施 方式所涉及的半导体装置可以说具有多个电极,该多个电极包括沿着半导

体芯片10的一条边15而排列的电极14。

电极14可以与集成电路12电连接。或者,包括不与集成电路12电 连接的导电体,也称作电极14。电极14可以是半导体芯片的内部布线的 一部分。电极14可以由铝或铜等金属形成。在半导体芯片IO上可以形成 钝化膜16,此时,电极14可以是从钝化膜16露出的露出区域(参照图2)。 另外,钝化膜例如可以是Si02或SiN等的无机绝缘膜。或者,钝化膜16 也可以是聚酰亚胺树脂等的有机绝缘膜。

如图1以及图2所示,本实施方式所涉及的半导体装置包括树脂突起 20。树脂突起20形成在半导体芯片10上。树脂突起20形成在半导体芯 片10的形成有电极14的面上。树脂突起20也可以形成在钝化膜16上。 树脂突起20也可以避开电极14 (使电极14露出)而形成。树脂突起20 成为沿着与半导体芯片10的边(边15)交叉的方向延伸的形状。如图1 所示,树脂突起20也可以成为相对于边15倾斜延伸的形状。本实施方式 的半导体装置可以具有多个树脂突起20。此时,如图1所示,在与边15 相邻的每个边分别仅形成有一个树脂突起20。但是,本发明并不仅限与此。 即,本发明所涉及的半导体装置也可以在与边15相邻的一条边(在靠近 与边15相邻的边的区域内),形成两个以上的树脂突起20 (参照图7)。 由此,可以扩大后述的电连接部30可形成区域,所以,可以不用增大半 导体芯片IO的外形来确保多个连接点,并且,可提高电连接部30配置的 自由度。

另外,本实施方式所涉及的半导体装置如图l所示,可以还包括其他 树脂突起22,该树脂突起22成为沿着半导体芯片10的边15而延伸的形

树脂突起20、 22的材料没有特别限定,可以应用已公知的任一种材 料。例如,树脂突起20、 22可以由聚酰亚胺树脂、硅改性聚酰亚胺树脂、 环氧树脂、硅改性环氧树脂、苯并环丁烯(BCB: benzocyclobutene)、聚 苯并噁唑(PBO: polybenzoxazole)、酚醛树脂等树脂形成。

本实施方式所涉及的半导体装置包括多个电连接部30。电连接部30 形成在树脂突起20上。如图1所示,在一个树脂突起20上可以形成多个 电连接部30。 g卩,多个电连接部30可以沿着与半导体芯片10的边15交

叉的直线排列。该多个电连接部30可以按照距半导体芯片10的边15的 距离不同的方式来配置。在半导体芯片10呈长方形的情况下,按照电连 接部30的距该长方形的长边的距离不同的方式进行配置。电连接部30可 以分别与电极14电连接。例如,电连接部30可以指定为按照从电极14 上引出并到达树脂突起20上的方式而形成的布线32的一部分(和树脂突 起20重叠的区域)。此时,电连接部30也可以指定为布线32中用作外 部端子的部分。另外,布线32可以按照在树脂突起20的两侧与半导体基 板10 (钝化膜16)接触的方式形成。

另外,本实施方式所涉及的半导体装置,可以还包括在树脂突起22 上形成的电连接部31。电连接部31可以与任意一个电极14电连接。

布线32 (电连接部30、 31)的结构及材料没有特别限定。例如,布 线32可以形成单层。或者,布线32也可以形成多层。此时,布线32可 以包括由钛钨形成的第一层和由金形成的第二层(未图示)。

本实施方式所涉及的半导体装置1可以采用以上的结构。根据半导体 装置1,可提供可靠性高且安装性优越的半导体装置。以下,对该效果进 行说明。

根据半导体装置i,树脂突起20成为沿着与边15交叉的方向延伸的 形状。由此,与树脂突起成为与边15平行地延伸的形状时相比,可以增 大连接相邻的两个布线32的、树脂突起20的基端部的表面距离。因此, 在相邻的两个布线32之间,由于可以降低实效的电场强度,所以难以发 生因迁移而引起的电短路现象。

另外,根据半导体装置l,可以提供安装性优异的半导体装置。以下, 参照图3以及图4对此进行说明。图3以及图4是表示将半导体装置1安 装到布线基板40后的样子的图。这里,图3是表示半导体装置1被安装 到布线基板40后的状态的图,但为了简单起见,仅用虚线表示半导体装 置1中半导体芯片10的外形以及电连接部30、 31。另外,图4是图3的 IV — IV线剖面的局部放大图。

首先,对布线基板40进行说明。布线基板40可以包括基底基板42 和布线44。布线44可以指定为布线基板40的布线图案的一部分。基底基 板42的材料没有特别限定。作为基底基板42,可以利用由无机系材料形

成的基板。此时,基底基板42可以是陶瓷基板或玻璃基板。在基底基板 42是玻璃基板的情况下,布线基板40可以是电光学面板(液晶面板、场 致发光面板等)的一部分。此时,布线44可以由ITO (Indium Tin Oxide)、 Cr、 Al等金属膜,金属化合物膜,或这些的复合膜形成。而且,布线44 可以和驱动液晶的电极(扫描电极、信号电极、对置电极等)电连接。或 者,基底基板42可以是由聚对苯二甲酸乙酯(PET)构成的基板或薄膜。 或者,作为基底基板42还可以使用由聚酰亚胺树脂构成的挠性基板。作 为挠性基板可以使用在FPC (Flexible Printed Circuit) 、 TAB (Tape Automated Bonding)技术中使用的胶带(tape)。此时,布线44可以通过 层叠铜(Cu)、铬(Cr)、钛(Ti)、镍(Ni)、钛鸭(Ti一W)中的任 一种而形成。

而且,也可以按照半导体芯片10的有源面与布线基板40相对置的方 式来搭载半导体装置l。此时,如图4所示,半导体装置1的电连接部30 可以与布线44接触并电连接。由此,通过树脂突起20的弹力,可以按压 电连接部30和布线44 (参照图4)。因此,可以提供电连接可靠性高的 半导体装置。而且,半导体装置1可以通过粘接剂50与布线基板40粘接。 半导体装置1也可以通过粘接剂50紧固于布线基板40。可以通过利用粘 接剂50保持半导体装置1和布线基板40之间的间隔,维持树脂突起20 发生了弹性变形后的状态。另外,半导体装置1可以直接安装在构成电子 模块1000的玻璃基板上。此时,半导体装置1能够以被称作COG(ChipOn Glass)安装的形态安装于玻璃基板。

根据半导体装置1,可以将与沿着半导体芯片10的一条边15排列的 电极14电连接的电连接部30,沿着与边15交叉的方向排列(参照图3)。 即,根据半导体装置l,可以将多个电连接部30按照距离边15的距离不 同的方式来配置。因此,如图3所示,可以将与电连接部30对置的布线 按照与边15的邻边交叉的方式引出,而无需以复杂的形状迂回。即,根 据半导体装置l,如图3所示,可以从半导体芯片IO的所有边引出布线, 而无需以复杂的形状使布线基板40的布线图案迂回。因此,根据半导体 装置1,可以减少实装该半导体装置的布线基板40布线图案的迂回制约。 并且,通过调整树脂突起20的形状,可以变更电连接部30的排列,所以, 可以按照已有的布线基板来设计半导体装置1。 g卩,根据半导体装置1, 可以提供通用性好、安装性优异的半导体装置。

另外,和电连接部30电连接布线可以按照与半导体芯片10的边15 交叉的方式引出(未图示)。根据半导体装置h由于可以按照距离边15 的距离不同的方式来配置电连接部30,所以,可以和按照与边15交叉的 方式延伸的布线电连接。g卩,根据半导体装置l,可提供能够安装于多种 类型的布线基板、通用性高的半导体装置。

而且,图5表示安装有半导体装置1的电子模块1000。电子模块1000 可以是显示器件。显示器件例如也可以是液晶显示器件或EL (Electrical Luminescence)显示器件。而且,半导体装置1也可以是控制显示器件的 驱动IC。

图6是用于对采用了本发明的实施方式的变形例所涉及的半导体装置 2进行说明的图。本实施方式所涉及的半导体装置包括树脂突起21。树脂 突起21可以成为沿着与半导体芯片10的一条边15正交的方向延伸的形 状。而且,在半导体装置2中,电连接部30可以在与边15正交的方向并 列地排列。由此,也可以提供安装性优异的半导体装置。

另外,本发明并不限定于上述的实施方式,也可以进行各种变更。例 如,本发明包括与实施方式中所说明的结构实质上相同的结构(例如,功 能、方法以及结果相同的结构,或者目的以及效果相同的结构)。而且, 本发明包括置换了不是实施方式中所说明结构的实质部分的构造。并且, 本发明包括可以起到与实施方式中所说明的结构相同作用效果的结构、或 者达到相同目的的结构。另外,本发明包括将公知技术添加到实施方式所 说明的结构而得到的结构。

Claims (5)

1. 一种半导体装置,包括:半导体芯片;多个电极,其形成于所述半导体芯片,并沿着所述半导体芯片的一条边排列;树脂突起,其形成在所述半导体芯片上,成为沿着与所述边交叉的方 向延伸的形状;和多个电连接部,其形成在所述树脂突起上,并与所述多个电极电连接;所述半导体芯片的形成有所述电极的面呈长方形,所述边是所述长方形的长边,所述多个电连接部沿着与所述边交叉的直线排列。
2. 根据权利要求l所述的半导体装置,其特征在于, 所述树脂突起成为相对所述边倾斜延伸的形状。
3. 根据权利要求1所述的半导体装置,其特征在于, 所述树脂突起成为沿着与所述边正交的方向延伸的形状。
4. 根据权利要求1〜3中任一项所述的半导体装置,其特征在于, 具有沿着所述边的方向配置的、相邻的两个以上的所述树脂突起。
5. 根据权利要求1〜3中任一项所述的半导体装置,其特征在于, 还包括成为沿着所述边延伸的形状的其他树脂突起。
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CN1505105A (zh) 2002-12-02 2004-06-16 精工爱普生株式会社 半导体器件及其制造方法、电路板、电光装置及电子仪器
CN1574322A (zh) 2003-06-09 2005-02-02 精工爱普生株式会社 半导体装置、半导体模块及其制法、电子设备、电子仪器

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