CN100437318C - Pixel structure and its repair method - Google Patents
Pixel structure and its repair method Download PDFInfo
- Publication number
- CN100437318C CN100437318C CNB2005101239650A CN200510123965A CN100437318C CN 100437318 C CN100437318 C CN 100437318C CN B2005101239650 A CNB2005101239650 A CN B2005101239650A CN 200510123965 A CN200510123965 A CN 200510123965A CN 100437318 C CN100437318 C CN 100437318C
- Authority
- CN
- China
- Prior art keywords
- capacitance electrode
- electrode
- capacitance
- dot structure
- pixel electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The pixel construction includes switch elements, pixel electrode and the first capacitance electrode. The pixel electrode is electric connected with the switch elements; the first capacitance electrode is below the pixel electrode, the first capacitance electrode is electrical isolated with the pixel electrode to form the storage capacitor. If the storage capacitor possesses defects, it can in working order just by moving part of the first capacitance electrode to maintain the normal display of the pixel construction.
Description
Technical field
The present invention relates to a kind of dot structure and method for repairing and mending thereof, and be particularly related to the reservior capacitor in the dot structure and the method for repairing and mending of reservior capacitor.
Background technology
Have that high image quality, space utilization efficient are good, (Thin Film Transistor Liquid Crystal Display TFT-LCD) becomes the main flow of display to the Thin Film Transistor-LCD of low consumpting power, advantageous characteristic such as radiationless gradually.General Thin Film Transistor-LCD is made of thin-film transistor array base-plate, subtend substrate and the liquid crystal layer that is sandwiched between the aforementioned two substrates.Wherein, thin-film transistor array base-plate mainly comprises substrate, arrayed dot structure, the scan wiring (Scan line) and data wiring (Date line) on substrate.Aforesaid dot structure is made of thin film transistor (TFT), pixel electrode (Pixel Electrode), reservior capacitor (Cst), wherein, thin film transistor (TFT) for example adopts amorphous silicon film transistor (a-Si TFT) or polycrystalline SiTFT (poly-Si TFT).Generally speaking, scan wiring can transfer to signal in the corresponding dot structure with data wiring, to reach the purpose of demonstration.In addition, dot structure can pass through the auxiliary of its reservior capacitor, and keeps normal demonstration.
Figure 1A is the partial schematic diagram of known thin-film transistor array base-plate, and Figure 1B is corresponding to the diagrammatic cross-section of B-B profile line among Figure 1A.Please have dot structure 10, scan wiring 14 and the data wiring 15 of a plurality of arrayed on the known thin-film transistor array base-plate simultaneously with reference to Figure 1A and Figure 1B.Wherein, dot structure 10 mainly comprises thin film transistor (TFT) 110, storage capacitors 120, pixel electrode 130.In addition, thin film transistor (TFT) 110 is electrically connected on pixel electrode 130, and storage capacitors 120 will describe in detail after a while.Shown in Figure 1A, scan wiring 14 can transfer to appropriate voltage corresponding dot structure 10 with data wiring 15.Particularly, thin film transistor (TFT) 110 in the dot structure 10 mainly comprises grid 112, channel layer 114, source electrode 116 and drain electrode 118, in Figure 1A, thin film transistor (TFT) 110 belongs to the structure of top grid (Top Gate), and the drain electrode 118 of thin film transistor (TFT) 110 is electrically connected with pixel electrode 130 and polysilicon electrode 122.
Please continue with reference to Figure 1B, in the present embodiment, storage capacitors 120 is arranged at the below of pixel electrode 130, and storage capacitors 120 is made of polysilicon electrode 122 and metal level 124.In addition, polysilicon electrode 122 correspondences are arranged at the below of metal level 124, and dielectric layer 126 is arranged between polysilicon electrode 122 and the metal level 124.
Fig. 2 causes the diagrammatic cross-section of capacitance leakage because of particulate for known storage capacitors.Please refer to Fig. 2, it should be noted that in manufacture process, when dielectric layer 126 in storage capacitors 120 or other factors caused dielectric layer 126 broken holes because particulate P drops, the phenomenon of capacitance leakage (leakage) will take place in storage capacitors 120.In other words, the situation of capacitance leakage will make dot structure 10 can't be recharged (when thin film transistor (TFT) 110 is opened) effectively, and the phenomenon (when thin film transistor (TFT) 110 cuts out) of unusual electric leakage can take place, and then causes the display quality of LCD not good.
Summary of the invention
The purpose of this invention is to provide a kind of dot structure, it has the reservior capacitor that is easy to repair.
Another object of the present invention provides a kind of method for repairing and mending of dot structure, and it can effectively keep the display characteristic of the dot structure after the repairing.
For reaching above-mentioned purpose, the present invention proposes a kind of dot structure and comprises on-off element, pixel electrode and first capacitance electrode.Wherein, pixel electrode is electrically connected with on-off element, and first capacitance electrode and pixel electrode electrical isolation, first capacitance electrode are positioned at the pixel electrode below, and first capacitance electrode has at least one opening; Also comprise second capacitance electrode that is positioned at first capacitance electrode below, this second capacitance electrode and the first capacitance electrode electrical isolation, and second capacitance electrode is electrically connected with pixel electrode.
In one of the present invention embodiment, wherein on-off element for example is a thin film transistor (TFT), and thin film transistor (TFT) comprises grid, channel layer, source electrode and drain electrode, and pixel electrode is electrically connected with drain electrode.
In one of the present invention embodiment, thin film transistor (TFT) for example is the amorphous silicon membrane transistor.When thin film transistor (TFT) was amorphous silicon film transistor, the material of pixel electrode for example comprised indium tin oxide, and the material of first capacitance electrode for example comprises metal.In addition, the dot structure of present embodiment can further comprise the dielectric layer that is arranged between the pixel electrode and first capacitance electrode.
In one of the present invention embodiment, dielectric layer for example comprises gate insulation layer and protective seam.Wherein, gate insulation layer is arranged at first capacitance electrode top, and protective seam is arranged between gate insulation layer and the pixel electrode.
In one of the present invention embodiment, on-off element for example is a low-temperature polysilicon film transistor.When on-off element was low-temperature polysilicon film transistor, the material of pixel electrode for example comprised indium tin oxide, and the material of first capacitance electrode for example comprises metal, and the material of second capacitance electrode for example comprises polysilicon.In addition, the dot structure of present embodiment can further comprise gate insulation layer and protective seam, and wherein gate insulation layer is arranged between first capacitance electrode and second capacitance electrode, and protective seam is arranged between first capacitance electrode and the pixel electrode.
The present invention also proposes a kind of method for repairing and mending, be suitable for above-mentioned dot structure is repaired, in when, because of defective capacitance leakage taking place between first capacitance electrode and the pixel electrode when, its method for repairing and mending for example comprises: remove part first capacitance electrode that is subjected to defective effect, to avoid because of defective capacitance leakage taking place between first capacitance electrode and the pixel electrode.Wherein, the method that removes of first capacitance electrode comprises cut (laser cutting).
The present invention also proposes a kind of method for repairing and mending, be suitable for above-mentioned dot structure is repaired, in when, because of defective capacitance leakage taking place between first capacitance electrode and second capacitance electrode when, this method for repairing and mending comprises and removes part first capacitance electrode that is subjected to defective effect and/or this second capacitance electrode of part, to avoid because of defective capacitance leakage taking place between first capacitance electrode and second capacitance electrode.Wherein, the method that removes of first capacitance electrode and/or this second capacitance electrode of part comprises cut.
Because the reservior capacitor in the dot structure of the present invention adopts capacitance electrode, therefore when reservior capacitor has defective, only need remove the small part capacitance electrode that is subjected to defective effect, so the present invention can avoid reservior capacitor complete failure.
State with other purposes, feature and advantage and can become apparent on the present invention for allowing, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A is the partial schematic diagram of known thin-film transistor array base-plate.
Figure 1B is corresponding to the diagrammatic cross-section of B-B profile line among Figure 1A.
Fig. 2 causes the diagrammatic cross-section of capacitance leakage because of particulate for the reservior capacitor of known thin-film transistor array base-plate.
Fig. 3 is a kind of known dot structure synoptic diagram.
Fig. 4 is corresponding to the diagrammatic cross-section of A-A profile line among Fig. 3.
Fig. 5 is the flaw reservior capacitor synoptic diagram of first embodiment of the invention.
Fig. 6 is corresponding to the diagrammatic cross-section of B-B profile line among Fig. 5.
Fig. 7 is the synoptic diagram of flaw reservior capacitor behind Hotfix of first embodiment of the invention.
Fig. 8 is the dot structure synoptic diagram of second embodiment of the invention.
Fig. 9 is corresponding to the diagrammatic cross-section of C-C profile line among Fig. 8.
Figure 10 A and Figure 10 B are the flaw reservior capacitor synoptic diagram of second embodiment of the invention.
Figure 11 is corresponding to the diagrammatic cross-section of D-D profile line among Figure 10 A and Figure 10 B.
The main element description of symbols
10,20,30: dot structure
110: thin film transistor (TFT)
120: reservior capacitor
122: polysilicon electrode
124: metal level
126: dielectric layer
130: pixel electrode
210,310: on-off element
212,312: grid
214,314: channel layer
216,316: source electrode
218,318: drain electrode
220,320: reservior capacitor
222: capacitance electrode
225: dielectric layer
226,326: gate insulation layer
227,327: protective seam
230,330: pixel electrode
14,24: scan wiring
15,25: data wiring
26: shared distribution
280,380: contact hole
322: the first capacitance electrodes
324: the second capacitance electrodes
P: particulate
L1, L2, L3, L4, L5, L6: line of cut
Embodiment
First embodiment
Fig. 3 is a kind of known dot structure synoptic diagram, and Fig. 4 is corresponding to the diagrammatic cross-section of A-A profile line among Fig. 3.Please be simultaneously with reference to Fig. 3 and Fig. 4, the dot structure 20 of present embodiment comprises on-off element 210, capacitance electrode 222 and pixel electrode 230.Wherein, pixel electrode 230 is electrically connected with on-off element 210, and capacitance electrode 222 and pixel electrode 230 electrical isolations, and capacitance electrode 222 is positioned at pixel electrode 230 belows.In addition, capacitance electrode 222 has at least one opening 222a, though express 3 opening 222a among Fig. 3 and Fig. 4, the present invention does not limit quantity, size and the distributing position of opening 222a.
In the present embodiment, on-off element 210 for example is the amorphous silicon membrane transistor, and on-off element 210 mainly comprises grid 212, is positioned at the channel layer 214 of grid 212 tops, and the source electrode 216 and drain electrode 218 that are positioned at channel layer 214 both sides.Wherein, grid 212 is electrically connected with scan wiring 24, and source electrode 216 is electrically connected with data wiring 25, and drains and 218 be electrically connected with pixel electrode 230 by contact hole 280.
As shown in Figure 4, the dot structure 20 of present embodiment can further comprise dielectric layer 225, and dielectric layer 225 for example is arranged between pixel electrode 230 and the capacitance electrode 222, and dielectric layer 225 for example is made of gate insulation layer 226 and protective seam 227.Particularly, gate insulation layer 226 parts are arranged at capacitance electrode 222 tops, and cover opening 222a, and protective seam 227 then is arranged between gate insulation layer 226 and the pixel electrode 230.In addition, the material of gate insulation layer 226 and protective seam 227 for example is silicon nitride, monox, silicon oxynitride, or other dielectric materials.
In the present embodiment, capacitance electrode 222 for example is to be electrically connected with shared distribution 26.On reality was made, capacitance electrode 222 for example was the metallic film of identical material with shared distribution 26, and by making with photo etched mask technology.
Please continue with reference to Fig. 3 and Fig. 4, the pixel electrode 230 of present embodiment is positioned at capacitance electrode 222 tops, and the gate insulation layer between pixel electrode 230 and the capacitance electrode 222 226 can be so that pixel electrode 230 be electrically insulated from each other with capacitance electrode 222 with protective seam 227.Thus, pixel electrode 230, capacitance electrode 222 and gate insulation layer between the two 226 just constitute reservior capacitor 220 with protective seam 227.When sweep signal inputed to scan wiring 24, on-off element 210 can be unlocked, and at this moment, view data just can be written on the pixel electrode 230 by data wiring 25.It should be noted that when on-off element 210 is closed the reservior capacitor 220 in the dot structure 20 can be kept the voltage of pixel electrode 230 effectively, have influence on display quality with the transformation decay of avoiding pixel electrode 230.
Fig. 5 is the flaw reservior capacitor synoptic diagram of present embodiment, and Fig. 6 is corresponding to the diagrammatic cross-section of B-B profile line among Fig. 5.Please be simultaneously with reference to Fig. 5 and Fig. 6; in the manufacture process of dot structure 20; the very possible generation occurs broken hole because particulate P drops on gate insulation layer 226 and protective seam 227 or in gate insulation layer 226 and the protective seam 227, and causes taking place between capacitance electrode 222 and the pixel electrode 230 problem of capacitance leakage.When reservior capacitor 220 becomes the flaw capacitor because of the influence of particulate P or broken hole, present embodiment can remove the subregion A of capacitance electrode 222 along line of cut L1 and L2, so that this subregion A that is subjected to defective (particulate P or broken hole) influence separates with other parts of capacitance electrode 222, and then avoid because of defective (particulate P or broken hole) capacitance leakage taking place between capacitance electrode 222 and the pixel electrode 230.It should be noted that the aforementioned operational example that removes capacitance electrode 222 undertaken by laser cutting parameter (laser cutting process) in this way.Under the situation of suitably controlling the laser energy and the depth of focus, present embodiment can remove partition capacitance electrode 222 accurately.
Fig. 7 is the synoptic diagram of flaw reservior capacitor behind Hotfix of present embodiment.Please refer to Fig. 7, after passing through above-mentioned Hotfix, only have capacitive coupling area (regional A) seldom partly to be rejected, and pass through the storage capacitors value (capacitance) that the reservior capacitor 220 after repairing still can be possessed suitable height ratio.Compare with known technology, the reservior capacitor 220 of present embodiment is difficult for complete failure and repair rate is very high, therefore helps the raising of product percent of pass.
Second embodiment
Fig. 8 is the dot structure synoptic diagram of second embodiment of the invention, and Fig. 9 is corresponding to the diagrammatic cross-section of C-C profile line among Fig. 8.Please be simultaneously with reference to Fig. 8 and Fig. 9, the dot structure 30 of present embodiment comprises on-off element 310, first capacitance electrode 322, second capacitance electrode 324 and pixel electrode 330.Wherein, pixel electrode 330 is electrically connected with the on-off element 310 and second capacitance electrode 324, and first capacitance electrode 322 is positioned at pixel electrode 330 belows, and second capacitance electrode 324 is positioned at first capacitance electrode, 322 belows, and first capacitance electrode 322 and second capacitance electrode, 324 electrical isolations.It should be noted that first capacitance electrode 322 has at least one first opening 322a, and second capacitance electrode 324 has at least one second opening 324a, and the first opening 322a is positioned at second opening 324a top.Though express 3 first opening 322a and 3 second opening 324a among Fig. 8 and Fig. 9, the present invention does not limit quantity, size and the distributing position of the first opening 322a and the second opening 324a.
The on-off element 310 of present embodiment for example is a low-temperature polysilicon film transistor, and it for example is the low-temperature polysilicon film transistor of top grid form.On-off element 310 mainly comprises grid 312, is positioned at the channel layer 314 of grid 312 belows, and the source electrode 316 and drain electrode 318 that are positioned at channel layer 314 both sides, wherein, grid 312 is electrically connected with scan wiring 24, source electrode 316 is electrically connected with data wiring 25, and drain electrode 318 is electrically connected with pixel electrode 330 by contact hole 380.
The reservior capacitor 320 of present embodiment is made of first capacitance electrode 322 and second capacitance electrode 324, and wherein second capacitance electrode 324 is arranged at first capacitance electrode, 322 belows.Particularly, first capacitance electrode 322 is electrically connected with shared distribution 26, and first capacitance electrode 322 and shared distribution 26 for example are all the metallic film of identical material.In addition, in the technology of low-temperature polysilicon film transistor, second capacitance electrode 324 forms by the low-temperature polysilicon film of part, therefore the drain electrode 318 and second capacitance electrode 324 of on-off element 310 are the low-temperature polysilicon films that are connected to each other, and draining 318 is electrically connected with pixel electrode 330 by contact hole 380, so second capacitance electrode 324 is electrically connected with pixel electrode 330.For example can further comprise gate insulation layer 326 between first capacitance electrode 322 and second capacitance electrode 324, wherein gate insulator 326 parts are arranged at the top of second capacitance electrode 324, and cover the second opening 324a, therefore first capacitance electrode 322 and second capacitance electrode, 324 electrical isolations.In addition, for example can further comprise protective seam 327 between first capacitance electrode 322 and the pixel electrode 330.In addition, gate insulation layer 326 for example is silicon nitride, monox, silicon oxynitride with the material of protective seam 327, or other dielectric materials.
Figure 10 A and Figure 10 B are the flaw reservior capacitor synoptic diagram of present embodiment, and Figure 11 is corresponding to the diagrammatic cross-section of D-D profile line among Figure 10 A and Figure 10 B.Please be simultaneously with reference to Figure 10 A, Figure 10 B and Figure 11, in dot structure 30 manufacture processes, the very possible generation because particulate P drops and broken hole occurs on gate insulation layer 326 or in the gate insulation layer 326, and cause taking place between first capacitance electrode 322 and second capacitance electrode 324 problem of capacitance leakage.And then cause reservior capacitor 320 to become the flaw capacitor.At this moment, we can remove the subregion B (shown in Figure 10 A) of first capacitance electrode 322 along line of cut L3 and L4, so that this area B that is subjected to defective (particulate P or broken hole) influence separates with other parts of first capacitance electrode 322, and then avoid because of defective (particulate P or broken hole) capacitance leakage taking place between first capacitance electrode 322 and first capacitance electrode 324.It should be noted that, we also can select to remove along line of cut L5 and L6 the subregion C (shown in Figure 10 B) of second capacitance electrode 324, so that this zone C that is subjected to defective (particulate P or broken hole) influence separates with other parts of second capacitance electrode 324, and then avoid because of defective capacitance leakage taking place between first capacitance electrode 322 and first capacitance electrode 324.Certainly, the present invention also can excise along line of cut L3, L4, L5, L6 simultaneously, so that area B is separated with other parts of second capacitance electrode 324 with first capacitance electrode 322 with zone C.
The aforementioned operational example of first capacitance electrode 322 and/or second capacitance electrode 324 that removes is as being undertaken by laser cutting parameter (laser cutting process).Under the situation of suitably controlling the laser energy and the depth of focus, present embodiment can remove part first capacitance electrode 322 and/or part second capacitance electrode 324 accurately.
In sum, dot structure of the present invention and method for repairing and mending thereof have following advantage at least:
1. in dot structure of the present invention; because reservior capacitor has capacitance electrode, therefore when reservior capacitor produces defective because of particulate or holes, only need remove the partition capacitance electrode that is subjected to defective effect; can repair reservior capacitor, and then avoid reservior capacitor complete failure.
2. method for repairing and mending of the present invention can be kept the effect of storage capacitors in the dot structure effectively, and then improves the manufacturing qualification rate of dot structure.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the present invention; when can doing a little change and improvement, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (12)
1. dot structure comprises:
On-off element;
Pixel electrode is electrically connected with this on-off element; And
First capacitance electrode, with this pixel electrode electrical isolation, wherein this first capacitance electrode is positioned at this pixel electrode below, and this first capacitance electrode has at least one first opening;
It is characterized in that this dot structure also comprises second capacitance electrode, be positioned at this first capacitance electrode below, wherein this second capacitance electrode and this first capacitance electrode electrical isolation, and this second capacitance electrode has second opening that at least one is positioned at first opening below, and this second capacitance electrode is electrically connected with this pixel electrode.
2. dot structure according to claim 1 is characterized in that this on-off element comprises thin film transistor (TFT), and this thin film transistor (TFT) has grid, channel layer, source electrode and drain electrode, and this pixel electrode is electrically connected with this drain electrode.
3. dot structure according to claim 2 is characterized in that this thin film transistor (TFT) is amorphous silicon film transistor or polycrystalline SiTFT.
4. dot structure according to claim 1 is characterized in that the material of this pixel electrode comprises indium tin oxide, and the material of this first capacitance electrode comprises metal.
5. dot structure according to claim 1 is characterized in that this dot structure also comprises dielectric layer, is arranged between this pixel electrode and this first capacitance electrode.
6. dot structure according to claim 1 is characterized in that this pixel electrode and this first capacitance electrode form storage capacitors.
7. dot structure according to claim 5 is characterized in that this dielectric layer comprises:
Gate insulation layer, part are arranged at this first capacitance electrode top, and cover this first opening; And
Protective seam is arranged between this gate insulation layer and this pixel electrode.
8. dot structure according to claim 1 is characterized in that this first capacitance electrode and this second capacitance electrode form storage capacitors.
9. dot structure according to claim 1 it is characterized in that the material of this first capacitance electrode comprises metal, and the material of this second capacitance electrode comprises polysilicon.
10. dot structure according to claim 1 is characterized in that also comprising:
Gate insulation layer is arranged between this first capacitance electrode and this second capacitance electrode, and covers this second opening; And
Protective seam is arranged between this first capacitance electrode and this pixel electrode.
11. method for repairing and mending, be suitable for dot structure is repaired, it is characterized in that this dot structure comprises on-off element, pixel electrode, first capacitance electrode and second capacitance electrode, wherein this pixel electrode is electrically connected with this on-off element, and this first capacitance electrode and this pixel electrode electrical isolation, this first capacitance electrode has at least one first opening, and this first capacitance electrode is positioned at this pixel electrode below, wherein this second capacitance electrode has at least one second opening, and this second opening is positioned at the below of first opening of this first capacitance electrode, and this second capacitance electrode and this first capacitance electrode electrical isolation, and this second capacitance electrode is electrically connected with this pixel electrode, when because of defective capacitance leakage taking place between this first capacitance electrode and this second capacitance electrode, this method for repairing and mending comprises:
Remove this first capacitance electrode of part and/or this second capacitance electrode of part of being subjected to this defective effect, to avoid because of this defective capacitance leakage taking place between this first capacitance electrode and this second capacitance electrode.
12. method for repairing and mending according to claim 11 is characterized in that the method that removes of this part first capacitance electrode and/or this second capacitance electrode of part comprises cut.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101239650A CN100437318C (en) | 2005-11-24 | 2005-11-24 | Pixel structure and its repair method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101239650A CN100437318C (en) | 2005-11-24 | 2005-11-24 | Pixel structure and its repair method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1971391A CN1971391A (en) | 2007-05-30 |
| CN100437318C true CN100437318C (en) | 2008-11-26 |
Family
ID=38112280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101239650A Expired - Fee Related CN100437318C (en) | 2005-11-24 | 2005-11-24 | Pixel structure and its repair method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100437318C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111108432A (en) * | 2018-02-11 | 2020-05-05 | 华为技术有限公司 | Display screen and terminal equipment |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000098420A (en) * | 1998-09-22 | 2000-04-07 | Toshiba Corp | Active matrix type liquid crystal display device |
| US6313481B1 (en) * | 1998-08-06 | 2001-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method of manufacturing the same |
| US20020063810A1 (en) * | 2000-11-27 | 2002-05-30 | Mutsumi Nakajima | Liquid crystal display device |
| JP2003029285A (en) * | 2001-07-19 | 2003-01-29 | Toshiba Corp | Electrode substrate for display device, and liquid crystal display device |
| CN1477909A (en) * | 2002-06-03 | 2004-02-25 | ������������ʽ���� | Display device using bidirectional two-terminal element and mfg. method thereof |
| CN1679170A (en) * | 2002-08-30 | 2005-10-05 | 夏普株式会社 | Thin film transistor, liquid crystal display apparatus, manufacturing method |
-
2005
- 2005-11-24 CN CNB2005101239650A patent/CN100437318C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6313481B1 (en) * | 1998-08-06 | 2001-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method of manufacturing the same |
| JP2000098420A (en) * | 1998-09-22 | 2000-04-07 | Toshiba Corp | Active matrix type liquid crystal display device |
| US20020063810A1 (en) * | 2000-11-27 | 2002-05-30 | Mutsumi Nakajima | Liquid crystal display device |
| JP2003029285A (en) * | 2001-07-19 | 2003-01-29 | Toshiba Corp | Electrode substrate for display device, and liquid crystal display device |
| CN1477909A (en) * | 2002-06-03 | 2004-02-25 | ������������ʽ���� | Display device using bidirectional two-terminal element and mfg. method thereof |
| CN1679170A (en) * | 2002-08-30 | 2005-10-05 | 夏普株式会社 | Thin film transistor, liquid crystal display apparatus, manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1971391A (en) | 2007-05-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103309099B (en) | LCD (Liquid Crystal Display) array substrate and manufacture method thereof | |
| CN100444383C (en) | Thin film transistor, pixel structure, and method for repairing pixel structure | |
| US5062690A (en) | Liquid crystal display with redundant FETS and redundant crossovers connected by laser-fusible links | |
| CN101521209B (en) | Active matrix substrate and display device | |
| EP0136509A2 (en) | Active matrix type display apparatus | |
| US7663711B2 (en) | Liquid crystal display and methods of fabricating and repairing the same | |
| US6630976B2 (en) | Array substrate for use in LCD device | |
| CN103345093B (en) | Pixel cell, array base palte and manufacture, restorative procedure and display device | |
| CN101356557B (en) | Active matrix substrate, display device and television receiver | |
| CN105006486A (en) | Thin film transistor and display device | |
| CN101566770A (en) | Array substrate of liquid crystal display device and method of fabricating the same | |
| US7414697B1 (en) | Liquid crystal display with particular gate dummy patterns to facilitate repair | |
| CN103984174A (en) | Pixel structure and manufacturing method and repair method thereof | |
| CN202473922U (en) | TFT array substrate and display device | |
| US7368751B2 (en) | Method of manufacturing an electronic device comprising a thin film transistor | |
| CN101034215A (en) | Pixel structure of LCD array substrate and method for making same | |
| CN103762263A (en) | Photosensitive unit, array substrate of display panel and manufacturing method of array substrate | |
| CN103018987B (en) | Array substrate and display device | |
| CN103280428A (en) | TFT-LCD (thin film transistor-liquid crystal display) array panel structure and production method thereof | |
| CN100437318C (en) | Pixel structure and its repair method | |
| CN103163704A (en) | Pixel structure, array substrate and manufacture method of array substrate | |
| CN102645802A (en) | TFT-LCD (thin film transistor liquid crystal display) array substrate and manufacturing and repairing methods thereof | |
| CN100449393C (en) | Image element structure and patching method thereof | |
| CN100397157C (en) | Array substrate and plane display device | |
| JP2770813B2 (en) | Liquid crystal display |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081126 Termination date: 20191124 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |