CN100421182C - Electrostatic discharge protective device and method for high voltage input bed - Google Patents
Electrostatic discharge protective device and method for high voltage input bed Download PDFInfo
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- CN100421182C CN100421182C CNB03105367XA CN03105367A CN100421182C CN 100421182 C CN100421182 C CN 100421182C CN B03105367X A CNB03105367X A CN B03105367XA CN 03105367 A CN03105367 A CN 03105367A CN 100421182 C CN100421182 C CN 100421182C
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- retaining ring
- high pressure
- electrostatic discharge
- voltage
- input pad
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Abstract
The present invention relates to an electrostatic discharge protector of a high voltage input pad, which comprises an adjuster connected between the input pad and a back element. A first guard ring and a second guard ring are formed around the adjuster, a third guard ring is formed around the back element, and a first guard ring control circuit and a second guard ring control circuit control the three guard rings to ensure that the protector has high trigger voltage and maintaining voltage in normal high voltage operation and has low trigger voltage and maintaining voltage in electrostatic discharge.
Description
Technical field
The present invention relates to a kind of static discharge (Electro-Static Discharge; ESD) protective device, particularly a kind of electrostatic discharge protective equipment of high pressure input pad.
Background technology
In memory product; particularly erasable programmble read only memory PROM (EPROM) and quickflashing (flash) storer; needs use high pressure is implemented sequencing and is wiped; yet, under esd event, use high pressure that superpressure (over shoot) may take place; therefore; for the protected storage circuit, need the esd protection device of high pressure input pad, to avoid the generation of superpressure.
The known esd protection structure that is used roughly is to utilize the transistor unlatching mechanism of holding circuit and transistor to return two kinds of (snapback) mechanism suddenly, and the former is its feature with the conductive channel limit voltage, and the latter is its feature with the transistor disruptive voltage then.Fig. 1 is the known nmos pass transistor 10 that is used to be used as the esd protection device of high pressure input pad; its drain electrode is connected to the contact between high pressure input pad and the memory circuitry; and its source electrode and grid link together and be connected to a reference potential, for example ground connection (ground).Two factors relevant with esd event are trigger voltages (triggering voltage) and keep voltage (holding voltage) in rapid time element 10.Generally speaking, trigger voltage and to keep voltage lower, then the performance of the performance of ESD is better.Fig. 2 is current-voltage (I-V) performance diagram of nmos pass transistor 10, and as shown in the figure, the high pressure A that imports this transistor 10 is about 12.5V, and superpressure critical point B is about 16V, and trigger voltage C is about 14V, is about 8V and keep voltage D.When high pressure A imported, nmos pass transistor 10 began charging and return (snapback) suddenly to keeping voltage D after arriving trigger voltage C.But, under normal operation with high pressure,,, will therefore cause nmos pass transistor 10 to be damaged because it keeps the subnormal input voltage A of voltage D if nmos pass transistor 10 is triggered by accident.
Therefore, wish to have a kind ofly can under normal high pressure, have higher trigger voltage and keep voltage, and under esd event, have lower trigger voltage and keep the esd protection device of voltage.
Summary of the invention
Technical matters to be solved by this invention is; above-mentioned deficiency at prior art; have higher trigger voltage and keeping voltage under normal operation with high pressure and provide a kind of, and under esd event, having lower trigger voltage and keep the electrostatic discharge protective equipment and the method for the high pressure input pad of voltage.
Above-mentioned technical matters of the present invention is realized by following technical scheme.
A kind of electrostatic discharge protective equipment of high pressure input pad is characterized in that comprising:
One regulator connects this input pad, in order to the trigger voltage of regulating this protective device and keep voltage, and produces a plurality of first electrical carrier, and wherein this regulator comprises a diode string;
One first retaining ring is first conductivity type, and it is around this regulator;
One second retaining ring is second conductivity type in contrast to this first conductivity type, and it centers on this first retaining ring:
The one rapid element that returns connects this regulator, and produces a plurality of second electrical carrier;
One the 3rd retaining ring is this first conductivity type, and it is around this rapid time element;
One first retaining ring control circuit connects this first and the 3rd retaining ring, is connected to a low pressure, suspension joint under electrostatic discharge event to control this first and the 3rd retaining ring under normal operation with high pressure; And
One second retaining ring control circuit connects this second retaining ring, controls this second retaining ring and is connected to a high pressure under this normal operation with high pressure, suspension joint under this electrostatic discharge event.
This device in specific implementation process, also can replenish following technology contents except that above-mentioned essential features:
Wherein this first and the 3rd retaining ring and second retaining ring are collected this a plurality of first electrical carrier and the second electrical carrier respectively under this normal operation with high pressure, to raise this trigger voltage and keep voltage, under this electrostatic discharge event, do not collect this a plurality of first electrical carrier and the second electrical carrier, to reduce this trigger voltage and to keep voltage.
Wherein this diode string comprises a number of diodes and this trigger voltage and keeps voltage to have a linear relationship.
Wherein should return element suddenly and comprise a nmos pass transistor.
Wherein this first electrical carrier is the hole.
Wherein this second electrical carrier is an electronics.
Wherein this first conductivity type is the P type.
Wherein this first retaining ring control circuit comprises a nmos pass transistor.
Wherein this second retaining ring control circuit comprises a nmos pass transistor.
Wherein be formed on this regulator and rapid returning between the element at the thyristor that comprises a parasitism under this electrostatic discharge event.
Wherein this thyristor comprises the PNP transistor and the NPN transistor of a parasitism.
The present invention also provides a kind of electrostatic discharge protection method that is used for the high pressure input pad of aforementioned means, it is characterized in that comprising the following steps:
Connect a regulator that constitutes by the diode string to this high pressure input pad, regulating trigger voltage and to keep voltage, and produce a plurality of first electrical carrier;
Around this regulator, form first retaining ring of one first conductivity type;
Form second retaining ring of one second conductivity type around this first retaining ring, this second conductivity type is in contrast to this first conductivity type;
Connect a rapid element that returns to this regulator, produce a plurality of second electrical carrier;
Suddenly return the 3rd retaining ring that forms this first conductivity type on every side of element at this;
Control this first and second retaining ring and the 3rd retaining ring, suspension joint under electrostatic discharge event is to reduce trigger voltage and to keep voltage;
Under normal operation with high pressure, connect this first and the 3rd retaining ring, make this first and the 3rd retaining ring collect this a plurality of first electrical carrier to a low pressure; And
Under normal operation with high pressure, connect this second retaining ring to a high pressure, make this second retaining ring collect this a plurality of second electrical carrier, to raise this trigger voltage and keep voltage.
Wherein this trigger voltage of this reduction and the step of keeping voltage comprise the following steps:
Make this first and the 3rd retaining ring suspension joint;
Make this second retaining ring suspension joint;
This a plurality of first electrical carrier quickens this triggering of returning element suddenly;
At this regulator and the rapid thyristor that produces a parasitism between the element that returns; And
This a plurality of second electrical carrier quickens the triggering of this thyristor, to reduce this trigger voltage and to keep voltage.
Wherein this adjusting trigger voltage and the step of keeping voltage are included in this input pad and return conducting one diode string between the element suddenly.
According to the present invention; a kind of electrostatic discharge protective equipment of high pressure input pad comprise a regulator that constitutes by the diode string connect this input pad, one first retaining ring be centered around regulator around, one second retaining ring is centered around outside first retaining ring, one rapid return element connect this regulator, one the 3rd retaining ring be centered around rapid return element around, one first retaining ring control circuit connects this first and the 3rd retaining ring and one second retaining ring control circuit connects this second retaining ring, wherein this regulator is used for adjusting the trigger voltage of this esd protection device and keeps the size of voltage.When connecting input voltage, regulator and the rapid element that returns disengage first and second too much electrical carrier respectively, and under normal operation with high pressure, first and second retaining ring control circuit is controlled these three retaining rings and is connected to a high pressure and a low pressure respectively effectively, make these three retaining rings can collect first and second too much electrical carrier respectively, thereby make this esd protection device have higher trigger voltage and keep voltage; Otherwise; under esd event; this first and second retaining ring control circuit is controlled this three retaining ring suspension joints; therefore, make these three retaining rings can't collect too much carrier, and then quicken rapid triggering of returning element; simultaneously; between regulator and rapid returning, form the thyristor (Silicon Controlled Rectifier SCR) of a parasitism, and the too much carrier that can't be collected also quickens the triggering of this parasitism SCR, thereby make this esd protection device have lower trigger voltage and keep voltage.
The invention has the advantages that:
Under normal operation with high pressure, have higher trigger voltage and keep voltage, and under electrostatic discharge event, have lower trigger voltage and keep voltage.
Can more clearly understand the present invention by following to being described in detail that specific embodiment is also done in conjunction with the accompanying drawings, its above-mentioned and other purpose and advantage will become more obvious.
Description of drawings
Fig. 1 is the esd protection device of traditional high pressure input pad.
Fig. 2 is the current-voltage curve figure of Fig. 1 device.
Fig. 3 is the esd protection schematic representation of apparatus of high pressure input pad of the present invention.
Fig. 4 is the embodiment of Fig. 3.
Fig. 5 is the sectional view of Fig. 4.
Fig. 6 is the synoptic diagram of Fig. 5 under normal operation with high pressure.
Fig. 7 is the synoptic diagram of Fig. 5 under esd event.
Fig. 8 is the current-voltage curve figure of Fig. 6 and Fig. 7.
Fig. 9 A is the embodiment of P type loop control circuit among Fig. 4.And
Fig. 9 B is the embodiment of N type loop control circuit among Fig. 4.
Embodiment
Fig. 3 is the synoptic diagram according to esd protection device 20 of the present invention.Wherein input pad 202 is for connecting input voltage to a memory circuitry, regulator 204 connects this input voltage, the rapid element 206 that returns is connected between a regulator 204 and the reference potential, retaining ring 208 and 209 be centered around respectively regulator 204 and rapid return element 206 around, retaining ring 210 is centered around outside the retaining ring 208, retaining ring control circuit 212 connects retaining ring 208 and 209 respectively, and retaining ring control circuit 214 connects retaining ring 210.Regulator 204 is used for adjusting the trigger voltage of esd protection device 20 and keeps the size of voltage.When input voltage is connected to input pad 202, regulator 204 and the rapid element 206 that returns discharge first and second too much electrical carrier respectively, and this esd protection device 20 is under normal operation with high pressure, retaining ring control circuit 212 and 214 is controlled these three retaining rings 208,209 and 210 respectively makes retaining ring 206,208 and 210 collect this first and second too much electrical carrier respectively, thereby make this esd protection device 20 have higher trigger voltage and keep voltage, as the curve 40 of Fig. 8; Otherwise; under esd event; retaining ring control circuit 212 and 214 is controlled these three retaining rings 206,208 and 209 respectively and is suspension joint; thereby make retaining ring 208,209 and 210 can't collect too much carrier; and then the rapid triggering of returning element 206 of acceleration; simultaneously; regulator 204 and the rapid SCR (not showing among Fig. 3) that forms a parasitism between the element 206 that returns; and the too much carrier that can't be collected also quickens the triggering of this parasitism SCR; thereby make this esd protection device 20 have lower trigger voltage and keep voltage, as the curve 50 of Fig. 8.
Fig. 4 and Fig. 5 are circuit diagram and the outboard profiles of the embodiment of Fig. 3; as shown in the figure, esd protection device 30 comprise a diode string 304 connect input pads 302, a P type ring 308 be centered around diode string 304 around, a N type ring 310 is centered around outside the P type ring 308, a nmos pass transistor 306.Its drain electrode connects the output of diode string 304, and grid and source electrode link together and be connected to a reference potential, a P type ring 309 be centered around nmos pass transistor 306 around, a P type loop control circuit 312 connects P type rings 308 and 309 and one N type loop control circuit 314 connects N type rings 310.Wherein the number of diodes of diode string 304 can influence the trigger voltage of protective device 30 and keep voltage.Its relational expression is as follows:
Wherein, Vtc is the trigger voltage of holding circuit 30, and Vtn is the trigger voltage of nmos pass transistor 306, and n is the number of diodes of diode string 304, and Vd is the conduction voltage drop of single diode.Vhc is the voltage of keeping of holding circuit 30, and Vhn is the voltage of keeping of nmos pass transistor 306.By above-mentioned can as, in the diode string 304 the number n of diode the more, then protect the trigger voltage Vtc of electric Lopa Nationality 30 and keep voltage Vhc higher, otherwise then little.The input voltage that nmos pass transistor 306 receives through 304 step-downs of diode string, the input voltage after this step-down can charge by pair nmos transistor 306, when arriving the trigger voltage Vtn of nmos pass transistor 306, can be back to suddenly rapidly and keep voltage Vhn.Moreover when connecting input voltage, diode string 304 produces too much hole 316, and nmos pass transistor 306 produces too much electronics 318.As shown in Figure 5.
Fig. 6 is the synoptic diagram of device 30 under normal operation with high pressure; as shown in the figure; P type loop control circuit 312 makes P type ring 308 and 309 effectively be connected to a reference potential; and N type loop control circuit 314 makes N type ring 310 effectively be connected to power source voltage Vcc; therefore; the multi-hole 316 of crossing that diode string 304 is produced can be collected by P type ring 308 and 309; and the polyelectron 318 of crossing that nmos pass transistor 306 is produced can be collected by N type ring 310; thereby can not form parasitic SCR; so the trigger voltage Vtc of this esd protection device 30 and the size of keeping voltage Vhc only are subjected to the control of diode string 304 and nmos pass transistor 306; device 30 has higher trigger voltage and keeps voltage under normal operation with high pressure, as the curve among Fig. 8 40.
Fig. 7 is the synoptic diagram under the esd event of device 30, as shown in the figure, P type loop control circuit 312 makes P type ring 308 and 309 be suspension joint, similarly, N type loop control circuit 314 also makes N type ring 310 be suspension joint, because retaining ring 308,309 and 310 equal suspension joints, so can't collect too much hole and electronics, wherein the hole that can't be collected will increase substrate current and make nmos pass transistor 306 easier being triggered, and can't be collected cross multi-hole and electronics produce a parasitism between diode string 304 and nmos pass transistor 306 SCR320, it comprises the NPN transistor 324 of the PNP transistor 322 and a parasitism of a parasitism, the nmos pass transistor 306 that is triggered will provide more electronics to quicken the triggering of SCR320, so can obtain lower trigger voltage Vtc and keep voltage Vhc, the curve 50 among its I-V curve such as Fig. 8.
Fig. 8 is the I-V curve map of the esd protection device 30 of Fig. 4; wherein curve 40 is illustrated in the I-V curve under the normal operation with high pressure; and curve 50 is illustrated in the I-V curve under the esd event; as shown in the figure; the trigger voltage 42 of curve 40 and keep voltage 44 and all be higher than the high pressure of being imported 60; the also unlikely damage even former nmos pass transistor 306 under normal operation is triggered; and the trigger voltage 52 of curve 50 and keep voltage 54 and all be lower than the trigger voltage 16 among Fig. 2 and keep voltage 18, so can obtain better ESD characteristic.
Fig. 9 A is an embodiment of P type loop control circuit 312 among Fig. 4, it uses a nmos pass transistor 70 to be used as P type loop control circuit 312, the drain electrode of nmos pass transistor 70 is connected to P type ring 308 and 309, its source electrode is connected to reference potential, its grid is connected to power source voltage Vcc and makes P type ring 308 and 309 be connected reference potential with conducting drain electrode and source electrode under normal high pressure, makes P type ring 308 and 309 can collect the hole; And under esd event, its grid to cut off the conducting between drain electrode and the source electrode, makes P type ring 308 and 309 suspension joints, so P type ring 208 and 309 can't be collected the hole with suspension joint.Fig. 9 B is an embodiment of N type loop control circuit 314 among Fig. 4, it uses a nmos pass transistor 80 to be used as N type loop control circuit 314, the drain electrode of nmos pass transistor 80 is connected to N type ring 310, its source electrode is connected to power source voltage Vcc, and its grid is connected to power source voltage Vcc and makes N type ring 310 be connected to voltage vcc under normal high pressure, make N type ring 310 collect too much electronics, under esd event, this grid suspension joint makes N type ring 310 suspension joints with the conducting of cutting off drain electrode and source electrode, so N type ring 310 can't be collected too much electronics.
More than the narration done for preferred embodiment of the present invention be purpose for illustrating, accurately be disclosed form and be not intended to limit the present invention, based on above instruction or to make an amendment or change from embodiments of the invention study be possible.Embodiment has the knack of this operator and utilizes the present invention to select in practical application with various embodiment and narrate for explaining orally principle of the present invention and allowing, and technological thought attempt of the present invention is decided by the scope and the equalization thereof of claims.
Claims (15)
1. the electrostatic discharge protective equipment of a high pressure input pad is characterized in that comprising:
One regulator connects this input pad, in order to the trigger voltage of regulating this protective device and keep voltage, and produces a plurality of first electrical carrier, and wherein this regulator comprises a diode string;
One first retaining ring is first conductivity type, and it is around this regulator;
One second retaining ring is second conductivity type in contrast to this first conductivity type, and it centers on this first retaining ring:
The one rapid element that returns connects this regulator, and produces a plurality of second electrical carrier;
One the 3rd retaining ring is this first conductivity type, and it is around this rapid time element;
One first retaining ring control circuit connects this first and the 3rd retaining ring, is connected to a low pressure, suspension joint under electrostatic discharge event to control this first and the 3rd retaining ring under normal operation with high pressure; And
One second retaining ring control circuit connects this second retaining ring, controls this second retaining ring and is connected to a high pressure under this normal operation with high pressure, suspension joint under this electrostatic discharge event.
2. the electrostatic discharge protective equipment of high pressure input pad according to claim 1; it is characterized in that: wherein this first and the 3rd retaining ring and second retaining ring are collected this a plurality of first electrical carrier and the second electrical carrier respectively under this normal operation with high pressure; to raise this trigger voltage and keep voltage; under this electrostatic discharge event, do not collect this a plurality of first electrical carrier and the second electrical carrier, to reduce this trigger voltage and to keep voltage.
3. the electrostatic discharge protective equipment of high pressure input pad according to claim 1 is characterized in that: included number of diodes and this trigger voltage of this diode string and keep voltage and have a linear relationship wherein.
4. the electrostatic discharge protective equipment of high pressure input pad according to claim 1 is characterized in that: wherein should return element suddenly and comprise a nmos pass transistor.
5. the electrostatic discharge protective equipment of high pressure input pad according to claim 1 is characterized in that: wherein this first electrical carrier is the hole.
6. the electrostatic discharge protective equipment of high pressure input pad according to claim 1 is characterized in that: wherein this second electrical carrier is an electronics.
7. the electrostatic discharge protective equipment of high pressure input pad according to claim 1 is characterized in that: wherein this first conductivity type is the P type.
8. the electrostatic discharge protective equipment of high pressure input pad according to claim 1 is characterized in that: wherein this second conductivity type is the N type.
9. the electrostatic discharge protective equipment of high pressure input pad according to claim 1 is characterized in that: wherein this first retaining ring control circuit comprises a nmos pass transistor.
10. the electrostatic discharge protective equipment of high pressure input pad according to claim 1 is characterized in that: wherein this second retaining ring control circuit comprises a nmos pass transistor.
11. the electrostatic discharge protective equipment of high pressure input pad according to claim 2 is characterized in that: wherein be formed on this regulator and rapid returning between the element at the thyristor that comprises a parasitism under this electrostatic discharge event.
12. the electrostatic discharge protective equipment of high pressure input pad according to claim 11 is characterized in that: wherein this thyristor comprises the PNP transistor and the NPN transistor of a parasitism.
13. an electrostatic discharge protection method that is used for the high pressure input pad of the described device of claim 1 is characterized in that comprising the following steps:
Connect a regulator that constitutes by the diode string to this high pressure input pad, regulating trigger voltage and to keep voltage, and produce a plurality of first electrical carrier;
Around this regulator, form first retaining ring of one first conductivity type;
Form second retaining ring of one second conductivity type around this first retaining ring, this second conductivity type is in contrast to this first conductivity type;
Connect a rapid element that returns to this regulator, produce a plurality of second electrical carrier;
Suddenly return the 3rd retaining ring that forms this first conductivity type on every side of element at this;
Control this first and second retaining ring and the 3rd retaining ring, suspension joint under electrostatic discharge event is to reduce trigger voltage and to keep voltage; Under normal operation with high pressure, connect this first and the 3rd retaining ring, make this first and the 3rd retaining ring collect this a plurality of first electrical carrier to a low pressure; And
Under normal operation with high pressure, connect this second retaining ring to a high pressure, make this second retaining ring collect this a plurality of second electrical carrier, to raise this trigger voltage and keep voltage.
14. the electrostatic discharge protection method of high pressure input pad according to claim 13 is characterized in that: wherein this trigger voltage of this reduction and the step of keeping voltage comprise the following steps:
Make this first and the 3rd retaining ring suspension joint;
Make this second retaining ring suspension joint;
This a plurality of first electrical carrier quickens this triggering of returning element suddenly;
At this regulator and the rapid thyristor that produces a parasitism between the element that returns; And
This a plurality of second electrical carrier quickens the triggering of this thyristor, to reduce this trigger voltage and to keep voltage.
15. the electrostatic discharge protection method of high pressure input pad according to claim 13 is characterized in that: wherein this adjusting trigger voltage and the step of keeping voltage are included in this input pad and return conducting one diode string between the element suddenly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB03105367XA CN100421182C (en) | 2003-02-26 | 2003-02-26 | Electrostatic discharge protective device and method for high voltage input bed |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB03105367XA CN100421182C (en) | 2003-02-26 | 2003-02-26 | Electrostatic discharge protective device and method for high voltage input bed |
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| Publication Number | Publication Date |
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| CN1525489A CN1525489A (en) | 2004-09-01 |
| CN100421182C true CN100421182C (en) | 2008-09-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB03105367XA Expired - Lifetime CN100421182C (en) | 2003-02-26 | 2003-02-26 | Electrostatic discharge protective device and method for high voltage input bed |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI368980B (en) | 2006-10-13 | 2012-07-21 | Macronix Int Co Ltd | Electrostatic discharge device for pad and method and structure thereof |
| CN101174622B (en) * | 2006-11-02 | 2010-04-07 | 旺宏电子股份有限公司 | Electrostatic discharge protecting equipment of connection pad and its method and structure |
| JP2010118548A (en) * | 2008-11-13 | 2010-05-27 | Mitsubishi Electric Corp | Semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5432371A (en) * | 1991-06-20 | 1995-07-11 | Robert Bosch Gmbh | Monolithically integrated circuit |
| CN1169799A (en) * | 1994-01-13 | 1998-01-07 | 爱特梅尔股份有限公司 | Electrostatic discharge circuit for high speed, high voltage cricuit |
-
2003
- 2003-02-26 CN CNB03105367XA patent/CN100421182C/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5432371A (en) * | 1991-06-20 | 1995-07-11 | Robert Bosch Gmbh | Monolithically integrated circuit |
| CN1169799A (en) * | 1994-01-13 | 1998-01-07 | 爱特梅尔股份有限公司 | Electrostatic discharge circuit for high speed, high voltage cricuit |
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| CN1525489A (en) | 2004-09-01 |
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Granted publication date: 20080924 |