CN100411200C - White light emitting device - Google Patents
White light emitting device Download PDFInfo
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- CN100411200C CN100411200C CNB2004100447666A CN200410044766A CN100411200C CN 100411200 C CN100411200 C CN 100411200C CN B2004100447666 A CNB2004100447666 A CN B2004100447666A CN 200410044766 A CN200410044766 A CN 200410044766A CN 100411200 C CN100411200 C CN 100411200C
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- light
- white light
- light emitting
- emitting device
- white
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Abstract
The present invention relates to a device for emitting white light, which comprises a semiconductor light emitting chip and a white light photoluminescence fluophor, wherein the semiconductor light emitting chip emits light which is absorbed by the white light photoluminescence fluophor to emit white light. The device for emitting white light has simplified technology and low manufacture cost and is easy to prepare white light, so that the present invention has industrial applied value. The device for emitting white light comprises the semiconductor light emitting chip which emits the light, and at least one (Ba1-xMx) Al2O4 photoluminescence fluophor which absorbs the light of the semiconductor light emitting chip to inspire the white light, wherein the M is one of elements of Eu, Bi, Mn, Ce, Tb, Gd, La, Mg and Sr, and 1>x>0.
Description
Technical field
The present invention relates to a kind of white light emitting device, refer to that especially a kind of white light luminescence generated by light fluorophor absorbs the light of semiconductor light emitting chip and sends the light-emitting device of white light.
Background technology
White light is a kind of mixed light of many colors, can is the mixed light that comprises two or more wavelength at least of white light by human eye perceives.Principle when for example human eye is subjected to the stimulation of red, blue, green glow simultaneously, or all can be felt as white light when being subjected to the stimulation of blue light and gold-tinted simultaneously, so can be made the led light source that emits white light according to this.White light LEDs manufacture method commonly used mainly contains four kinds: it is three LEDs of material that first method is to use with InGaAlP, InGaN and GaN, and the electric current of controlling respectively by LED sends red, green and blue light.Because of these three crystal grain are to be placed in the same bulb (lamp), lens can be mixed the light that sends and be produced white light.It is that two LEDs of material are also controlled electric current by LED respectively and sent indigo plant and green-yellow light to produce white light that second method is to use GaN and Gap.The luminous efficiency of this dual mode can reach 20lm/W at present.But these two kinds of some shortcomings of method, if promptly these different photochromic LED that use simultaneously one of them break down, then can't obtain normal white light.And because of its forward bias has nothing in common with each other, so must overlap control circuits, cause cost higher, this all is the unfavorable factor in the practical application more.The third then be 1996 Japanese Ri Ya chemical company (Nichia Chemical) develop with the InGaN blue light-emitting diode and cooperate the Yttrium aluminium garnet (YAG) type fluorescent powder of jaundice light also can become a white light source.The luminous efficiency of the method at present (can reach 15lm/W) though lower slightly than preceding two kinds of methods, get final product because of only needing one group of led chip, reduced manufacturing cost very significantly, add the fluorescent material modulation technique of being arranged in pairs or groups and attained maturation, so the present commodity that have present.Yet, wherein second kind is utilized the complementary colours principle to produce white light with the third method, the continuity that its spectral wavelength distributes is not as real sunlight, can (400nm～700nm) the inhomogeneous of color occur causes color saturation lower in visible spectrum after making coloured light mixed.Though human eyes can be ignored these phenomenons, only can see the light of white, but under the sensing of the higher optics detection device of some precision, for example video camera or camera etc., its color rendering is substantially still on the low side, be that object color can produce error when reduction, so the white light source that this mode produces only is suitable as simple lighting use.In addition, the 4th kind of scheme that can produce white light is that SUMITOMO CHEMICAL electrician (Sumitomo Electric Industries Ltd) develops the white light LEDs that uses the ZnSe material in January, 1999, its technology is to form the CdZnSe film earlier on the ZnSe monocrystal substrate, the energising rear film can send blue light, simultaneously the blue light illumination of part is on substrate and send gold-tinted, and last blue, gold-tinted forms complementary colours and sends white light.Because the method also only adopts single LEDs crystal grain, its operating voltage is 2.7V only, and is lower than the 3.5V of the LED of GaN, and do not need fluorescent material can obtain white light.But its shortcoming be luminous efficiency only for 8lm/W, the life-span also has only 8000 hours, still needs further to break through in the measurement aspect practical.
Developed LED at present, be to excite three or more fluorescent material to produce white light to mix, to can be applicable to illumination (promptly replacing fluorescent lamp or bulb) future, but to utilize multiple fluorescent powder to make it send fluorescence simultaneously, one of its prerequisite is exactly that selected exciting light can be absorbed by these fluorescent material just, and each fluorophor can not differ too many to the absorption coefficient of the light of this wavelength, and the quantum efficiency of transform light energy also is close to good as far as possible, therefore technology increases and the allotment trouble, is not the mode that obtains white light for the best.
Thus, the inventor is according to above-mentioned defective and be engaged in the correlation experience that manufactures a product for many years, proposes a kind of white light emitting device that this defective was closed now and effectively improved in a kind of design.
Summary of the invention
One object of the present invention, be to provide a kind of white light emitting device, it emits beam by the semiconductor light emitting chip, and absorbed the back and inspire white light by white light luminescence generated by light fluorophor, the technology of this white light emitting device is simple, cost of manufacture is low, improves significantly for the convenience that mixes white light simultaneously, therefore has the value that industry is used.
According to the foregoing invention purpose, the present invention is a kind of white light emitting device, and it comprises semiconductor luminescence chip and at least one (Ba
1-xM
x) Al
2O
4Type luminescence generated by light fluorophor, and this semiconductor light emitting chip emits beam this at least one (Ba
1-xM
x) Al
2O
4Type luminescence generated by light fluorophor absorbs the light of this semiconductor light emitting chip and inspires white light, and wherein the wavelength of this white light is 400nm to 700nm, and this M is Bi, Mn, Ce, Tb, Gd, La, Mg and Sr a kind of element wherein, and 1＞X＞0.
The convenience that mixes white light is thus improved significantly, and technology is simple, and cost of manufacture is low, has the value that industry is used.
Description of drawings
Fig. 1 is the schematic diagram of white light emitting device first embodiment of the present invention;
Fig. 2 is the schematic diagram of white light emitting device second embodiment of the present invention;
Fig. 3 is the excitation spectrum (excitation) and the emission spectrum (emission) of luminescence generated by light fluorophor of the present invention;
Fig. 4 is the chromaticity coordinate figure of the emission spectrum of Fig. 3 with program conversion gained;
Fig. 5 is a manufacturing process of white light emitting device of the present invention;
Fig. 6 is another manufacturing process of white light emitting device of the present invention.
Wherein, description of reference numerals is as follows:
Semiconductor light emitting chip 10
(Ba
1-xM
x) Al
2O
4Type luminescence generated by light fluorophor 20
Packing colloid 30
Embodiment
See also Figure 1 and Figure 2, the present invention is a kind of white light emitting device, and it comprises semiconductor luminescence chip 10 and at least one (Ba
1-xM
x) Al
2O
4Type luminescence generated by light fluorophor 20, and this semiconductor light emitting chip 10 emits beam is with by (Ba
1-xM
x) Al
2O
4Type luminescence generated by light fluorophor absorbs and inspires white light, and wherein this M is Eu, Bi, Mn, Ce, Tb, Gd, La, Mg and Sr a kind of element wherein, and 1＞X＞0.
Wherein, the light that this semiconductor light emitting chip 10 is sent is ultraviolet light, and its wavelength is between between the 300nm to 400nm, and this ultraviolet light is by should (Ba
1-xM
x) Al
2O
4After absorbing, sends type luminescence generated by light fluorophor 20 white light of 400nm to 700nm wavelength, and should (Ba
1-xM
x) Al
2O
4Type luminescence generated by light fluorophor 20 can suitably be allocated the content of the rear-earth-doped element of this kind fluorescent material again, as the optical activity center or the collocation sensitizer in host lattice, can access the white light emitting diode of a high brightness, the form of implementation of this white light emitting device can make this (Ba
1-xM
x) Al
2O
4The type luminescence generated by light fluorophor 20 luminescence generated by light rete (seeing also shown in Figure 1) on this semiconductor light emitting chip 10 of growing up, or form the photoluminescent phosphor body to be mixed in packing colloid 30 (seeing also shown in Figure 2) or to form other form, like this, feed electric current and make this semiconductor light emitting chip 10 send ultraviolet ray, and inspired white light light by this luminescence generated by light rete or this photoluminescent phosphor bulk absorption.In addition, Fig. 3 is (Ba of the present invention
1-xM
x) Al
2O
4Excitation spectrum (excitation) and emission spectrum (emission), Fig. 4 is the chromaticity coordinate figure of the emission spectrum of Fig. 3 by program conversion gained.
See also shown in Figure 5, should (Ba
1-xM
x) Al
2O
4Type luminescence generated by light fluorophor can make by solid state reaction or chemical synthesis, and wherein the making step of this solid state reaction is:
Step 1: get aluminium oxide (Al respectively according to stoichiometric proportion
2O
3), brium carbonate (BaCO
3) and europium oxide (Eu
2O
3), the prescription that makes its formation is (Ba
1-xM
x) Al
2O
4(work as with M=Eu this moment is example).The raw material that weighs is evenly mixed with lapping mode.
Step 2: mixture is inserted in the ship type crucible, and in H
2/ N
2Be heated to 1500 ℃ with the heating rate of 5 ℃/min in the reducing atmosphere of (5%/95%) and carried out sintering (sintering) and reduction (reduction) 12 hours.This is just with the Eu in the sample
3+Ion is reduced into Eu
2+, can improve its luminosity whereby, obtain (Ba
0.9Eu
0.1) Al
2O
4Fluorophor.
Step 3: with above-mentioned fluorophor cooperate can send wavelength be the ultraviolet light semiconductor light emitting chip of 400nm as excitation source, after encapsulation, apply suitable electric current and can obtain the good white light emitting device of a characteristics of luminescence.
See also shown in Figure 6ly, it makes for the citrate gel method by chemical synthesis, the steps include:
Step 1: get aluminum nitrate (Al (NO respectively according to stoichiometric proportion
3)
3.6H
2O), barium chloride (Ba (Cl)
3) and europium nitrate (Eu (NO
3)
3.6H
2O), making the prescription of its formation is (Ba
1-xEu
x) Al
2O
4(work as M=Eu this moment is example).These metallic salts are inserted make its dissolving form the aqueous solution in the secondary deionized water.
Step 2: added oxalic acid and stir about ten minutes.
Step 3: stir the colloidal solution that forms, obtain white jelly with the filtration method of bleeding then.
Step 4: with the white jelly of step 3 in air with 300 ℃ of most organic matters of thermal decomposition and part nitrogen oxide, obtain lime shape thing.
Step 5: mixture is inserted in the ship type crucible, and in H
2/ N
2Be heated to 1500 ℃ with the heating rate of 5 ℃/min in the reducing atmosphere of (5%/95%) and carried out sintering (sintering) and reduction (reduction) 12 hours.This is just with the Eu in the sample
3+Ion is reduced into Eu
2+, improve its luminosity thus, to obtain (Ba
0.9Eu
0.1) Al
2O
4Fluorophor.
Step 6: with aforementioned phosphors cooperate can send wavelength be the ultraviolet light semiconductor light emitting chip of 400nm as excitation source, after encapsulation, apply suitable electric current and can obtain the good white light emitting device of a characteristics of luminescence.
In sum, " white light emitting device " of the present invention emits beam by the semiconductor light emitting chip, and by (Ba
1-xM
x) Al
2O
4Type luminescence generated by light fluorophor absorbs and sends white light, and this M is Eu, Bi, Mn, Ce, Tb, Gd, La, Mg and Sr a kind of element wherein, and 1＞x＞0, its technology is simple, cost of manufacture is low, simultaneously, also improve significantly, therefore have the value that industry is used for the convenience that mixes white light.
The above only is a preferable possible embodiments of the present invention, is not to be used to limit the scope of the invention, so the equivalent structure that all utilizations specification of the present invention and accompanying drawing content are done changes, all should be contained in the scope of the present invention.
Claims (7)
1. white light emitting device comprises:
The semiconductor luminescence chip, it emits beam; And
At least one (Ba
1-xM
x) Al
2O
4Type luminescence generated by light fluorophor, it absorbs the light of this semiconductor light emitting chip and inspires white light, and wherein the wavelength of this white light is 400nm to 700nm, and this M is Bi, Mn, Ce, Tb, Gd, La, Mg and Sr a kind of element wherein, and 1＞x＞0.
2. white light emitting device as claimed in claim 1, wherein the light that sent of this semiconductor light emitting chip is ultraviolet light.
3. white light emitting device as claimed in claim 2, wherein this ultraviolet light wavelength is between 300nm to 400nm.
4. white light emitting device as claimed in claim 1, wherein this at least one (Ba
1-xM
x) Al
2O
4Type luminescence generated by light fluorophor is with solid state reaction and chemical synthesis a kind of making wherein.
5. white light emitting device as claimed in claim 1, wherein this at least one (Ba
1-xM
x) Al
2O
4Type luminescence generated by light fluorophor is with coprecipitation and citrate gel method a kind of making wherein.
6. white light emitting device as claimed in claim 1, wherein this at least one (Ba
1-xM
x) Al
2O
4Type luminescence generated by light fluorophor is formed at the luminescence generated by light rete on this semiconductor light emitting chip.
7. white light emitting device as claimed in claim 1, wherein this at least one (Ba
1-xM
x) Al
2O
4Type luminescence generated by light fluorophor forms the photoluminescent phosphor body, and is mixed in packing colloid, to receive the light-emitting line of this semiconductor light emitting chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100447666A CN100411200C (en) | 2004-05-18 | 2004-05-18 | White light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100447666A CN100411200C (en) | 2004-05-18 | 2004-05-18 | White light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1700483A CN1700483A (en) | 2005-11-23 |
| CN100411200C true CN100411200C (en) | 2008-08-13 |
Family
ID=35476415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100447666A Expired - Fee Related CN100411200C (en) | 2004-05-18 | 2004-05-18 | White light emitting device |
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|---|---|
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103059841A (en) * | 2012-12-26 | 2013-04-24 | 青岛盛嘉信息科技有限公司 | Nanoflake luminescent material and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1326907A (en) * | 2000-05-09 | 2001-12-19 | 松下电器产业株式会社 | Light transmittance sintered body and luminous tube and disharge lamp made of it |
| CN1412270A (en) * | 2001-10-11 | 2003-04-23 | 台湾光宝电子股份有限公司 | Method for obtaining lilght source of white light |
| CN1444775A (en) * | 2000-07-28 | 2003-09-24 | 电灯专利信托有限公司 | Illumination device with at least one LED as light source |
| CN1452253A (en) * | 2002-04-15 | 2003-10-29 | 住友化学工业株式会社 | Phosphor for white-light emitting diode and white-light emitting diode |
| CN1478855A (en) * | 2003-08-05 | 2004-03-03 | 北京大学 | Violet light excitated bicomponent three basic colour fluorescent powder and its preparation method |
-
2004
- 2004-05-18 CN CNB2004100447666A patent/CN100411200C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1326907A (en) * | 2000-05-09 | 2001-12-19 | 松下电器产业株式会社 | Light transmittance sintered body and luminous tube and disharge lamp made of it |
| CN1444775A (en) * | 2000-07-28 | 2003-09-24 | 电灯专利信托有限公司 | Illumination device with at least one LED as light source |
| CN1412270A (en) * | 2001-10-11 | 2003-04-23 | 台湾光宝电子股份有限公司 | Method for obtaining lilght source of white light |
| CN1452253A (en) * | 2002-04-15 | 2003-10-29 | 住友化学工业株式会社 | Phosphor for white-light emitting diode and white-light emitting diode |
| CN1478855A (en) * | 2003-08-05 | 2004-03-03 | 北京大学 | Violet light excitated bicomponent three basic colour fluorescent powder and its preparation method |
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| Publication number | Publication date |
|---|---|
| CN1700483A (en) | 2005-11-23 |
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Owner name: LITE-ON TECHNOLOGY (CHANGZHOU) CO., LTD. Free format text: FORMER OWNER: GUANGBAO SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20131212 Owner name: GUANGBAO SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20131212 |
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Free format text: CORRECT: ADDRESS; FROM: TAIWAN, CHINA TO: 213166 CHANGZHOU, JIANGSU PROVINCE |
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Effective date of registration: 20131212 Address after: 213166 Wujin high tech Industrial Development Zone, Jiangsu Province, Yang Lake Road, No. 88 Patentee after: LITE-ON TECHNOLOGY (CHANGZHOU) CO., LTD. Patentee after: Lite-On Technology Corporation Address before: Taipei City, Taiwan, China Patentee before: Lite-On Technology Corporation |
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Granted publication date: 20080813 Termination date: 20210518 |
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