CN100403021C - Ionized gas sensor microarray structure based on micro-electronic fabrication technology - Google Patents
Ionized gas sensor microarray structure based on micro-electronic fabrication technology Download PDFInfo
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- CN100403021C CN100403021C CNB2005101122187A CN200510112218A CN100403021C CN 100403021 C CN100403021 C CN 100403021C CN B2005101122187 A CNB2005101122187 A CN B2005101122187A CN 200510112218 A CN200510112218 A CN 200510112218A CN 100403021 C CN100403021 C CN 100403021C
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Abstract
The present invention relates to an ionized gas sensor micro-array structure based on a micro-electronic technical field, which comprises a substrate, a micro-electrode array, micro-electrode strip units and sensor units, wherein the micro-electrode array is arranged on the substrate, and the micro-electrode array comprises a plurality of micro-electrode strip units. Each pair of adjacent negative electrode strip and positive electrode strip forms a side wall electrode pair, and the side wall electrode pair can generate a controllable electric field to form one sensor unit. A plurality of sensor units form the micro-electrode array, and according to whether the plane geometry shapes and the separation distances of the adjacent negative electrode strips and positive electrode strips in the sensor units are the same, the sensor units are divided into equal units and different units. The present invention is suitable for a micro-electronic machining technique and can integrate various kinds of combination of the shapes and the separation distances of electrodes in one micro array, and therefore, the present invention can carry out the system detection of different electricity characteristics of target gas discharge phenomenon. The present invention can also enhance detection precision and detection accuracy, and a micro sensor array system having the advantages of high sensitivity, high selectivity, high stability, high work safety and low energy consumption can be easily formed.
Description
Technical field
The present invention relates to a kind of device of microelectronics technology, specifically is a kind of ionized gas sensor microarray structure based on microelectronic processing technique.
Technical background
Is the sensor of mechanism based on the ionization of gas molecule in electric field with the charged particle transport that produces therefrom, can be used for sensing gas with various composition and content information, with respect to the sensor of other types, the major advantage of this sensor is that it has very high selectivity.But use conventional machining process and electrode material, and this type of sensor based on capacitance structure but has very many defectives, mainly be because operating voltage is too high, usually reach about kilovolt, cause that safety in utilization is low, the high-tension circuit that needs a relative complex costliness, can't process and realize portable micro element, cost height, be difficult to realize sensor arrayization, therefore, the sensor based on this principle is difficult to be used to the basic sensitive components of conduct based on the intelligence sensor system of extensive microsensor array.Therefore, be that relative advantage on its sensing principle is arranged based on the gas sensor of molecular ionization principle, but must manage to reduce operating voltage.
Find that through literature search people such as Zhang Yong are at the document that is entitled as " Study of improvingidentification accuracy of carbon nanotube film cathode gas sensor (the carbon nano-tube thin film cathode gas sensor being improved the research of accuracy of detection) " of " Sensors and Actuators A (sensor and actuator A) " the 125th phase in 2005 report to prior art.By using carbon nano-tube can significantly reduce the operating voltage of device as electrode, form arrays by two different sensors of spacing on the other hand in the literary composition, the gas discharge electric property of Li Yonging carries out the accuracy of identification of pattern-recognition raising to mixed gas again.Proposition is suitable in batches, the array structure of the device of high-precision processing but do not have in the literary composition.
Summary of the invention
The objective of the invention is to overcome deficiency of the prior art, the present invention proposes a kind of ionized gas sensor microarray structure based on microelectronic processing technique.Make it make full use of the powerful plane working ability of microelectronic processing technique, can be processed to form different sensing unit electrode separations and electrode plane shape accurately.Sensor microarray proposed by the invention can be in batches, high-precision machine-shaping, is suitable for the array structure as the sensing unit of little intelligence sensor system.Simultaneously, owing to use this manufacturing process, make that each sensing unit can have very big design and optimization space in the array, and can process several microns electrode gap, electrode size, thereby can reduce the operating voltage of entire device greatly.
The present invention is achieved by the following technical solutions, the present invention includes: substrate, microelectrode array, microelectrode bar unit, sensor unit, described microelectrode array is arranged on the substrate, described microelectrode array, comprise a plurality of microelectrode bars unit, every pair of adjacent anodic-cathodic bar formation side-wall electrode is right, as the structure that produces controllable electric field, thereby constitute a sensor unit, a plurality of sensor units are formed microelectrode array, whether the plane geometric shape according to the adjacent anodic-cathodic bar in each sensor unit is identical with spacing, sensor unit is divided into and is equal to unit and anticoincidence unit mutually, be equal to the unit and be meant that the plane geometric shape and the spacing of the adjacent anodic-cathodic bar in two unit are identical, the phase anticoincidence unit is meant the plane geometric shape or the spacing difference of the adjacent anodic-cathodic bar in two unit.
Described substrate, its surface has high insulating property, and it can be a glass, also can be the silicon chip that the upper strata has insulation course, and insulating layer material can be silicon dioxide, silicon nitride, also can be other dielectric substrate.
Described microelectrode array can be individual layer or multilayer film, comprises metal level or comprises metal level and the monodimension nanometer material layer.Said metal, for example chromium, copper, gold, platinum, aluminium, nickel, iron-nickel, nickel-copper.Said monodimension nanometer material, for example carbon nano-tube, carbon nano-fiber, nano silicon carbide silica fibre, nano zine oxide fiber.
Described microelectrode array comprises anode array and cathode array, between every pair of adjacent electrode bar certain interval is arranged all, has gas to be measured in the interval.
Sensor microarray proposed by the invention is suitable for adopting high-precision microelectronic processing technique to each sensing unit machine-shaping, thereby electrode separation can be contracted to the level of the following magnitude of micron, therefore can greatly reduce operating voltage.Simultaneously, sensor array of the present invention, the multiple combination of electrode shape, these two kinds of parameters of anodic-cathodic spacing can be integrated in the microarray, and these two parameters are topmost parameters that make same gas produce different sparking voltages-current characteristic difference, therefore, micro element of the present invention can enhancing signal intensity, the error effect of the single device of balance; The discharge device that can utilize simultaneously multiple different characteristic structure carries out system to the different electrical characteristics of object gas electric discharge phenomena and detects, and can increase accuracy of detection and accuracy.Therefore be easy to form microsensor array system with hypersensitivity, selectivity, stability, job security and low energy consumption.
Description of drawings
Fig. 1 is the synoptic diagram of a kind of array structure involved in the present invention.
Fig. 2 is that structure sensor microarray of the present invention detects resulting unit interval-discharge inception voltage curve to three kinds of object gas.
Embodiment
As shown in Figure 1, the present invention includes, substrate 1, microelectrode array 2, microelectrode bar unit 3, sensor unit 4, described microelectrode array 2 is arranged on the substrate 1, described microelectrode array 2, comprise a plurality of microelectrode bars unit 3, every pair of adjacent anodic-cathodic bar formation side-wall electrode is right, as the structure that produces controllable electric field, thereby constitute a sensor unit 4, a plurality of sensor units are formed microelectrode array, whether the plane geometric shape according to the adjacent anodic-cathodic bar in each sensor unit is identical with spacing, sensor unit is divided into and is equal to unit and anticoincidence unit mutually, is equal to the unit and is meant that the plane geometric shape and the spacing of the adjacent anodic-cathodic bar in two unit are identical, and the phase anticoincidence unit is meant the plane geometric shape or the spacing difference of the adjacent anodic-cathodic bar in two unit.
Described substrate 1, its surface has high insulating property, and it can be a glass, also can be the silicon chip that the upper strata has insulation course, and insulating layer material can be silicon dioxide, silicon nitride, also can be other dielectric substrate.
Described microelectrode array 2 can be individual layer or multilayer film, comprises metal level or comprises metal level and the monodimension nanometer material layer.Described metal, for example chromium, copper, gold, platinum, aluminium, nickel, iron-nickel, nickel-copper.Said monodimension nanometer material, for example carbon nano-tube, carbon nano-fiber, nano silicon carbide silica fibre, nano zine oxide fiber.
Described microelectrode array 2 comprises anode array and cathode array, between every pair of adjacent electrode bar certain interval is arranged all, has gas to be measured in the interval.
The field that certain form takes place for the gas that makes each composition and content causes discharge, all must form the electric field of certain feature in the space of containing this gas, and can allow the feature ionization electric field of a series of gases simultaneously in the space of a device and deposit by suitable design, method is some unit with this spatial division exactly, each unit all is made up of the space of carbon nano-tube microclearance electrode gap and adjacent domain thereof, but the structure difference of each unit, typically, as anodic-cathodic shape difference in the anodic-cathodic spacing difference of two unit or two unit.And make certain independently loop that forms in parallel, each unit by circuit design, when the device feature at a certain unit imposes character voltage, will be in the middle of the electrode gap of this sensing unit and near zone produce the internal field of different distributions feature and intensity, and this internal field can make object gas that the electric field of discharge takes place, when certain object gas exists, this unit will form path, show as the character voltage and the electric current of this composition and content gas, as a kind of foundation of judging that this kind gas exists.For other unit in the array, at first,, can amplify or the accuracy of validation signal for being equal to the unit; Secondly, for the phase anticoincidence unit, under its character voltage separately, form its feature ionization electric field, and form the electrical characteristic that its corresponding unit shows in the loop, as experiencing other foundations that this kind gas exists, so just obtained the systematization of this kind gas characteristic discharge electrical quantities is detected.Thereby improve Selectivity of Sensor, sensitivity and precision.
Fig. 2 is that structure sensor microarray of the present invention detects resulting unit interval-discharge inception voltage curve to three kinds of object gas.Three kinds of object gas are respectively that to contain percent by volume in air, the air be that to contain percent by volume in 1% He and the air be 10% CO
2Sensor microarray has used four different sensor units, the adjacent anodic-cathodic stripe pitch difference of each sensor unit.And each cell electrode bar of sensor array all includes carbon nano-tube film, forms carbon nanotube electrode.The use of little spacing and carbon nanotube electrode has reduced operating voltage significantly.And obtained a kind of new detected gas composition and the method for content information, can greatly improve accuracy in detection and precision.
Claims (3)
1. ionized gas sensor microarray structure based on microelectronic processing technique, comprise, substrate (1), microelectrode array (2), microelectrode bar unit (3), sensor unit (4), it is characterized in that, described microelectrode array (2) is arranged on the substrate (1), microelectrode array (2) comprises a plurality of microelectrode bars unit (3), every pair of adjacent anodic-cathodic bar formation side-wall electrode is right, as the structure that produces controllable electric field, thereby constitute a sensor unit (4), a plurality of sensor units are formed microelectrode array, whether the plane geometric shape according to the adjacent anodic-cathodic bar in each sensor unit is identical with spacing, sensor unit is divided into and is equal to unit and anticoincidence unit mutually, be equal to the unit and be meant that the plane geometric shape and the spacing of the adjacent anodic-cathodic bar in two unit are identical, the phase anticoincidence unit is meant the plane geometric shape or the spacing difference of the adjacent anodic-cathodic bar in two unit.
2. the ionized gas sensor microarray structure based on microelectronic processing technique according to claim 1 is characterized in that described substrate (1) is a glass, or the upper strata has the silicon chip of insulation course, and insulating layer material is silicon dioxide or silicon nitride.
3. the ionized gas sensor microarray structure based on microelectronic processing technique according to claim 1, it is characterized in that described microelectrode array (2) comprises anode array and cathode array, all have between every pair of adjacent electrode bar at interval, have gas to be measured in the interval.
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| CNB2005101122187A CN100403021C (en) | 2005-12-29 | 2005-12-29 | Ionized gas sensor microarray structure based on micro-electronic fabrication technology |
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| CN101383256B (en) * | 2008-10-23 | 2011-09-28 | 上海交通大学 | Side wall electrode of large length to diameter ratio and manufacturing method thereof |
| CN101413918B (en) * | 2008-10-23 | 2012-01-04 | 上海交通大学 | Large length-diameter ratio electrode array and manufacturing method thereof |
| CN102614823B (en) * | 2011-01-27 | 2014-08-06 | 财团法人交大思源基金会 | Microfluidic system having bubble, gas discharge method thereof and gas reaction method thereof |
| CN104614437B (en) * | 2015-02-15 | 2017-03-22 | 太原理工大学 | Electrode spacing optimization method for carbon nanotube three-electrode gas sensor |
| CN108369200B (en) * | 2015-12-16 | 2020-10-27 | 松下知识产权经营株式会社 | Gas sensor and gas sensing system |
| DE102017200156A1 (en) * | 2017-01-09 | 2018-07-12 | Robert Bosch Gmbh | Manufacturing method for a micromechanical sensor device and corresponding micromechanical sensor device |
| CN108128750B (en) * | 2017-12-14 | 2020-12-11 | 上海交通大学 | Manufacturing method of ionization type sensor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5591896A (en) * | 1995-11-02 | 1997-01-07 | Lin; Gang | Solid-state gas sensors |
| CN1176385A (en) * | 1996-02-03 | 1998-03-18 | 塞比卢斯有限公司 | Process and device for detection of organic yapours and aerosols |
| JP2003287514A (en) * | 2002-03-28 | 2003-10-10 | Isamu Uchida | Microelectrode structure and measuring instrument using the same |
| CN1527051A (en) * | 2003-09-23 | 2004-09-08 | 清华大学 | Organic gas testing nano material method and sensor |
| US20050045493A1 (en) * | 2003-08-29 | 2005-03-03 | Mahurin Shannon Mark | Method and apparatus for detection of chemical vapors |
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- 2005-12-29 CN CNB2005101122187A patent/CN100403021C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5591896A (en) * | 1995-11-02 | 1997-01-07 | Lin; Gang | Solid-state gas sensors |
| CN1176385A (en) * | 1996-02-03 | 1998-03-18 | 塞比卢斯有限公司 | Process and device for detection of organic yapours and aerosols |
| JP2003287514A (en) * | 2002-03-28 | 2003-10-10 | Isamu Uchida | Microelectrode structure and measuring instrument using the same |
| US20050045493A1 (en) * | 2003-08-29 | 2005-03-03 | Mahurin Shannon Mark | Method and apparatus for detection of chemical vapors |
| CN1527051A (en) * | 2003-09-23 | 2004-09-08 | 清华大学 | Organic gas testing nano material method and sensor |
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