CN100382399C - Semiconductor laser - Google Patents
Semiconductor laser Download PDFInfo
- Publication number
- CN100382399C CN100382399C CNB2005101194772A CN200510119477A CN100382399C CN 100382399 C CN100382399 C CN 100382399C CN B2005101194772 A CNB2005101194772 A CN B2005101194772A CN 200510119477 A CN200510119477 A CN 200510119477A CN 100382399 C CN100382399 C CN 100382399C
- Authority
- CN
- China
- Prior art keywords
- semiconductor laser
- laser
- ridge
- equal
- scope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Semiconductor Lasers (AREA)
Abstract
A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide. a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
Description
Technical field
The present invention relates to be used in the semiconductor laser of optical disk system or optical communication etc., particularly discrete the and single block of semiconductor laser of ridged structure.
Background technology
The semiconductor laser of dual channel type ridged structure has following structure: adopt less raceway groove (ditch) the portion clamping ridge of equivalent refractive index, and adopt the bigger layer clamping groove of equivalent refractive index.
And the semiconductor laser of existing dual channel type ridged structure adopts the width of 10 μ m to constitute the ditch portion of ridge side, and this ditch portion removes semiconductor film by dry etching and wet etching and forms.
The far field pattern (farfield pattern) of the laser that penetrates from the semiconductor laser with said structure is for oval, and the expansion of the far field pattern of active layer vertical direction is bigger, and the expansion of the far field pattern of active layer horizontal direction is less.
In the semiconductor laser of existing dual channel type ridged structure, the center intensity and the shape of the far field pattern of meeting occurred level direction change along with the variation of light output, exist the problem that can not obtain stable rate of finished products.
Summary of the invention
The objective of the invention is to, a kind of semiconductor laser is provided, its intensity that penetrates the far field pattern of horizontal direction does not change with the variation of light output and the laser of dimensionally stable.
The described invention of the present invention's the 1st technical scheme relates to a kind of like this semiconductor laser of dual channel type ridged structure, with the equivalent refractive index groove clamping ridge littler than above-mentioned ridge, and employing compares the bigger layer above-mentioned groove of clamping and constituting of equivalent refractive index with above-mentioned groove, it is characterized in that:
When the width of above-mentioned groove meets the following conditions,
E＝Acos(ux)(x≤T/2) ···(1)
E＝Acos(uT/2)exp(-w(|x|-T/2))(x≥T/2) ···(2)
u
2+W
2＝(n
1 2-n
2 2)(2π/λ)
2T
2 ···(3)
w＝u·tan(u) ···(4)
Wherein, E is an electric field
A is the coefficient of regulation
X is the distance of the above-mentioned chi chung heart of distance
T is the width of above-mentioned ridge
n
1Equivalent refractive index for above-mentioned ridge
n
2Equivalent refractive index for above-mentioned groove
λ is the oscillation wavelength of above-mentioned semiconductor laser
Wc is the width of above-mentioned groove
Electric field E2 among the X=T/2+Wc is satisfied with the E2/E1 of the electric field E1 during to X=0 that formula (4) calculates by formula (1):
0.0001≤E2/E1≤0.01 ···(5)
The described invention of the present invention's the 2nd technical characterictic relates to the semiconductor laser that a kind of ridged that adopts equivalent refractive index to constitute than the little groove clamping ridge of above-mentioned ridge is constructed, it is characterized in that: leave prescribed distance from the end of above-mentioned ridge, disposed the laser absorption zone that absorbs laser in the both sides of above-mentioned ridge.
The invention that the present invention's the 3rd technical characterictic is put down in writing relates to a kind of equivalent refractive index groove clamping ridge littler than above-mentioned ridge that adopt, and adopt the semiconductor laser of the dual channel type ridged structure that equivalent refractive index constitutes than the big layer above-mentioned groove of clamping of above-mentioned groove, it is characterized in that: the oscillation wavelength of above-mentioned semiconductor laser is in more than or equal to 601nm in the scope smaller or equal to 700nm, and the width of the groove of above-mentioned dual channel type ridged structure is in greater than 5 μ m in the narrow range less than 10 μ m.
The invention that the present invention's the 4th technical characterictic is put down in writing relates to a kind of equivalent refractive index groove clamping ridge littler than above-mentioned ridge that adopt, and adopt the semiconductor laser of the dual channel type ridged structure that equivalent refractive index constitutes than the big layer above-mentioned groove of clamping of above-mentioned groove, it is characterized in that: the oscillation wavelength of above-mentioned semiconductor laser is in more than or equal to 701nm in the scope smaller or equal to 900nm, and the width of the groove of above-mentioned dual channel type ridged structure is in greater than 5 μ m in the narrow range less than 10 μ m.
The invention that the present invention's the 5th technical characterictic is put down in writing relates to a kind of equivalent refractive index groove clamping ridge littler than last fast ridge that adopt, and adopt the semiconductor laser of the dual channel type ridged structure that equivalent refractive index constitutes than the big layer above-mentioned groove of clamping of above-mentioned groove, it is characterized in that: the oscillation wavelength of above-mentioned semiconductor laser is in more than or equal to 330nm in the scope smaller or equal to 600nm, and the width of the groove of above-mentioned dual channel type ridged structure is in more than or equal to 0.7 μ m in the scope smaller or equal to 5.0 μ m.
The described invention of the 1st technical characterictic according to the present invention determines that the width of groove is set up formula (5).And, there be the equivalent refractive index layer bigger than the equivalent refractive index of groove in the outside of groove.Therefore, under the state that formula (5) is set up, absorbed by semiconductor, so can obtain that variation that the center intensity of the far field pattern of horizontal direction do not export with light changes and the laser of dimensionally stable owing to be distributed in from groove light laterally.
The described invention of the 2nd technical characterictic according to the present invention, the laser absorption zone is left the end predetermined distance of ridge and is disposed.Therefore, absorbed by laser absorption zone, change so can obtain the variation that the center intensity of the far field pattern of horizontal direction do not export along with light and the laser of dimensionally stable owing to be distributed in from groove light laterally.
The invention of the 3rd technical characterictic according to the present invention, be in more than or equal to 601nm smaller or equal to the semiconductor laser in the scope of 700nm for oscillation wavelength, owing to be distributed in from raceway groove light laterally and absorbed, change so can obtain the variation that the center intensity of the far field pattern of horizontal direction do not export along with light and the laser of dimensionally stable by semiconductor.
The described invention of the 4th technical characterictic according to the present invention, be in more than or equal to 701nm smaller or equal to the semiconductor laser in the scope of 900nm for oscillation wavelength, owing to be distributed in from raceway groove light laterally and absorbed, change so can obtain the variation that the center intensity of the far field pattern of horizontal direction do not export along with light and the laser of dimensionally stable by semiconductor.
The invention that the 5th technical characterictic is put down in writing according to the present invention, be in more than or equal to 330nm smaller or equal to the semiconductor laser in the scope of 600nm for oscillation wavelength, owing to be distributed in from raceway groove light laterally and absorbed, so can obtain that variation that the center intensity of the far field pattern of horizontal direction do not export with light changes and the laser of dimensionally stable by semiconductor.
Description of drawings
Fig. 1 represents the stereogram of the structure of the semiconductor laser that execution mode 1 is related.
Fig. 2 represents the A-A line profile of the semiconductor laser that execution mode 1 is related.
Figure 3 shows that the distribution map of the electric field of the section of the semiconductor laser that execution mode 1 is related.
Figure 4 shows that the different constructing variable groups of the semiconductor laser of phase antithetical phrase execution mode 1, the electric field level of the electric field level of ridge central portion and ditch end is the figure of the distance of requirement ratio.
Fig. 5 is illustrated in the semiconductor laser of execution mode 1, the figure of the result of calculation of the far field pattern of horizontal direction.
Fig. 6 is illustrated in the semiconductor laser of execution mode 1, the figure of the measured value of the far field pattern of horizontal direction.
Fig. 7 is illustrated in the semiconductor laser of prior art, the figure of the measured value of the far field pattern of horizontal direction.
Fig. 8 represents the stereogram of the structure of the semiconductor laser that execution mode 2 is related.
Fig. 9 represents the stereogram of the structure of the semiconductor laser that execution mode 3 is related.
Figure 10 represents the stereogram of the structure of the semiconductor laser that execution mode 4 is related.
Figure 11 represents the stereogram of the structure of the semiconductor laser that execution mode 8 is related.
Figure 12 represents the stereogram of the structure of the semiconductor laser that execution mode 9 is related.
Figure 13 represents the stereogram of the structure of the semiconductor laser that execution mode 10 is related.
Embodiment
Fig. 1 represent present embodiment related, oscillation wavelength is in more than or equal to 601nm the stereogram smaller or equal to the structure of the semiconductor laser in the scope of 700nm 13.The A-A line profile of Fig. 2 presentation graphs 1.
Semiconductor laser in the present embodiment is a kind of clamping ridge 6 and form the semiconductor laser of the dual channel type ridged structure of 2 ditches (raceway groove) portion 15.
In Fig. 1, the top of n type (n-) GaAs substrate 1 forms n-AlGaInP lower caldding layer 2.The active layer 3 that forms the multiple quantum trap structure on the n-AlGaInP lower caldding layer 2 (below, be called the MQW active layer), wherein, the active layer 3 of this multiple quantum trap structure be with GaInP as the trap layer, with AlGaInP as the barrier layer.
On active layer 3, form p type (p-) AlGaInP the 1st upper caldding layer 4, etch stop layer 5 in turn.On etch stop layer 5, form the ridge 6 of wire.And being separated by is formed at 2 ditch portions 15 of ridge 6 both sides, forms p-AlGaInP the 2nd upper caldding layer 7 of wire along ridge 6.
Then, at the upper surface formation p-GaAs of ridge 6 and pAlGaInP the 2nd upper caldding layer 7 contact layer 8, form dielectric film 9 at an upper portion thereof.On dielectric film 9, form the p electrode 10 that constitutes by metallic film and Gold plated Layer.And the dielectric film 9 on the ridge 6 is by opening, and p electrode 10 and p-GaAs contact layer 8 are electrically connected.
Near the end face of semiconductor laser 13, be provided with window zone 11.And, form n electrode 12 at the back side of n-GaAs substrate 1.In addition, 14 expression laser.
In above-mentioned example, the composition of AlGaInP is exactly by (Al
xGa
1-x) 0.5In0.5P represents.And the ratio of components X of n-AlGaInP lower caldding layer 2 is 0.5～0.7, the ratio of components X of p-AlGaInP the 1st upper caldding layer 4 is 0.5～0.7, the ratio of components X of p-AlGaInP the 2nd upper caldding layer 7 is 0.5～0.7.
The thickness of each layer, n-AlGaInP lower caldding layer 2 are that 1.5～4 μ m, p-AlGaInP the 1st upper caldding layer 4 are 0.1～1 μ m, and p-AlGaInP the 2nd upper caldding layer 7 is 0.5～2 μ m.And the carrier concentration of each layer, the carrier concentration of n-AlGaInP lower caldding layer 2 are 0.3～2.0 * 10
18Cm
-3, p-AlGaInP the 1st upper caldding layer 4 carrier concentration be 0.3～2.0 * 10
18Cm
-3, p-AlGaInP the 2nd upper caldding layer 7 carrier concentration be 0.3～2.0 * 10
18Cm
-3
Secondly, the manufacture method to the semiconductor laser of present embodiment describes.At first, utilize crystalline growth method such as mocvd method on n-GaAs substrate 1, to form n-AlGaInP lower caldding layer 2, MQW active layer 3, p-AlGaInP the 1st upper caldding layer 4, etch stop layer 5, p-AlGaInP the 2nd upper caldding layer 7, p-GaAs contact layer 8 in turn.
Then, near end face, make MQW active layer 3 disorderings, thereby form window zone 11 by Zn diffusion etc.Then, with resist or dielectric film as mask by dry etching and to adopt sulfuric acid or hydrochloric acid be etching solution, p-AlGaInP the 2nd upper caldding layer 7 is carried out selective etch, thereby forms ridge 6 and ditch portion 15.At this moment, by suitable etching solutions such as employing sulfuric acid, automatically stop etching at etch stop layer 5.
Then, form dielectric films 9 such as nitride film, form peristome at the upper surface of ridge 6, and form the p electrode 10 of metallic film and Gold plated Layer formation by photoetching on whole surface.
Fig. 3 is the synoptic diagram of the structure corresponding with Fig. 2 and the figure that represents the refraction index profile and the Electric Field Distribution of this structure.The figure of Fig. 3 upper level is the synoptic diagram of structure shown in Figure 2.And the figure shown in the next stage represents and corresponding refraction index profile of higher level's synoptic diagram and Electric Field Distribution.
Here, transverse axis X represents to leave the distance at ridge 6 centers.And n1 is that equivalent refractive index, the n2 of ridge 6 is equivalent refractive indexs of ditch 15.In addition, T is that width, the Wc of ridge 6 are width of ditch portion 15.
When refraction index profile shown in Figure 3 is approximately 3 floor guided wave roads of not loss, the Electric Field Distribution of fundamental mode (E) is generally provided (with reference to fine " semiconductor laser and the optic integrated circuit " write of Mo Songan by following formula (1) and (2), ohm society, 3.2 chapters, P54-55).
E＝Acos(ux)(x≤T/2) ···(1)
E＝Acos(uT/2)exp(-w(|x|-T/2))(x≥T/2)···(2)
Here, u and w are the values by following formula (3) and (4) definition.
u
2+W
2＝(n
1 2-n
2 2)(2π/λ)
2T
2 ···(3)
w＝u·tan(u) ···(4)
In addition, A is the coefficient of regulation, and λ is the oscillation wavelength of laser.
In the semiconductor laser of present embodiment, set constructing variable, thus electric field level (E1) that obtain, ridge 6 central authorities and be that the electric field level (E2) of ditch portion 15 ends of T/2+Wc satisfies following formula (5) when being approximately break-even 3 floor guided wave roads and being applied to the semiconductor laser of dual channel type ridged structure apart from ridge 6 centre distances:
0.0001≤E2/E1≤0.01 ···(5)
The distance X to leaving ridge 6 central authorities that the electric field ratio of scope shown in Fig. 4 expression (5) is set up is carried out result calculated.When E2/E1 satisfied formula (5), the center intensity that can obtain the far field pattern of horizontal direction did not change with the variation of light output and the laser of dimensionally stable.In addition, the Δ n among Fig. 4 represents the value of n1-n2.
In addition, satisfy the width W c of the ditch portion 15 of formula (5) according to the difference of frequency band, at oscillation wavelength more than or equal to 601nm in the semiconductor laser smaller or equal to 700nm, the scope that is in 5 μ m＜Wc＜10 μ m is interior more suitable, but it is more suitable to be in the scope of 4.3 μ m≤Wc≤9.0 μ m, if be in the scope of 4.7 μ m≤Wc≤8.0 μ m then better.Though more than or equal to 701nm in the semiconductor laser smaller or equal to 900nm, it is more suitable to be in the scope of 5 μ m＜Wc＜10 μ m at oscillation wavelength, it is more suitable to be in the scope of 5.2 μ m≤Wc≤9.8 μ m.And, at oscillation wavelength more than or equal to 330nm in the semiconductor laser smaller or equal to 600nm, the scope that is in 0.7 μ m≤Wc≤5.0 μ m is interior more suitable, but it is more suitable to be in the scope of 1.7 μ m≤Wc≤5.0 μ m, if be in the scope of 2.2 μ m≤Wc≤4.2 μ m then better.
It is in the semiconductor laser of 7 μ m more than or equal to 601nm smaller or equal to the width W c of 700nm, ditch portion 15 that Fig. 5 is illustrated in oscillation wavelength, the result of calculation of the emulation of the far field pattern of horizontal direction (FFPX).Moreover Fig. 6 illustrates the example of far-field pattern of horizontal direction of the semiconductor laser of actual fabrication.It is the example of far field pattern of semiconductor laser of the prior art of 10 μ m more than or equal to 601nm smaller or equal to the width W c of 700nm, ditch portion 15 that Fig. 7 is illustrated in oscillation wavelength.
As can be known, by the width of design ditch portion 15 in the scope shown in the present embodiment, thereby the shape of the far field pattern of horizontal direction has had tangible improvement than prior art, and the center of far field pattern is highly stable from Fig. 5 to Fig. 7.
As discussed above, the width of the ditch portion 15 of the semiconductor laser of setting present embodiment makes it satisfy formula (5).In addition, as the semiconductor laser of present embodiment, in the semiconductor laser of dual channel type ridged structure, there be the equivalent refractive index layer bigger in the outside of ditch portion 15 than the equivalent refractive index of ditch portion 15.
Therefore, under the state that formula (5) is set up, absorbed by semiconductor, change so can obtain the variation that the center intensity of the far field pattern of horizontal direction do not export along with light and the laser of dimensionally stable owing to be distributed in from ditch portion 15 light laterally.
In addition, less owing to being distributed in from the uptake of ditch portion 15 light laterally, so other laser characteristics variation can not take place.
Also have, in the present embodiment, show oscillation wavelength more than or equal to 601nm smaller or equal to the semiconductor laser in the 700nm scope, but, the light of the semiconductor laser of other oscillation wavelengths distributes and also can satisfy formula (5), moreover, not limiting the shape of ridge 6 and ditch portion 15, it can be perpendicular shape or tilted shape.
Even said circumstances, owing to be distributed in from ditch portion 15 light laterally and absorbed by semiconductor, the center intensity that also can obtain the far field pattern of horizontal direction does not change along with the variation of light output and the laser of dimensionally stable.
Fig. 8 is the stereogram of section of the semiconductor laser of present embodiment.The oscillation wavelength of the semiconductor laser of present embodiment is in more than or equal to 601nm in the scope smaller or equal to 700nm, and is different with semiconductor laser shown in Figure 1, the semiconductor laser that it is constructed for the ridged that does not have double channel.Represent identical or suitable part with Fig. 1 and the added same tag part that is labeled as of Fig. 2 with it.Have again, in Fig. 8, omit p electrode 10 grades and the untight structure of description of the present embodiment relation.
The semiconductor laser of present embodiment is separated by greater than 5 μ m less than the more closely-spaced d of 10 μ m from the end configuration of ridge 6 amorphous silicon layer as laser absorption zone 16.
Be distributed in the light in laser absorption zone by adopting amorphous silicon to absorb, thereby follow the dimensionally stable of the radiotherapy beam of the horizontal direction that light output changes to get off, and the element that do not change with the variation of light output of the beam center that can produce horizontal direction.
Fig. 9 represents the stereogram of section of the semiconductor laser of present embodiment.The oscillation wavelength of the semiconductor laser of present embodiment is in more than or equal to 601nm in the scope smaller or equal to 700nm, and is different with semiconductor laser shown in Figure 1, the semiconductor laser that it is constructed for the ridged that does not have double channel.
In the both sides of ridge 6, be separated by greater than 5 μ m and disposed proton (ion) injection zone as laser absorption zone 16 less than the more closely-spaced d of 10 μ m.Owing to the protonation zone is non-gain regions, pretend to be the laser absorption regional work.
Therefore, be distributed in the light in laser absorption zone, thereby follow the radiotherapy beam dimensionally stable of the horizontal direction that light output changes to get off, and can produce the element that the beam center of horizontal direction does not change along with the variation of light output by absorption.
Execution mode 4
Figure 10 is the stereogram of section of the semiconductor laser of present embodiment.The oscillation wavelength of the semiconductor laser of present embodiment is in more than or equal to 601nm in the scope smaller or equal to 700nm, and is different with semiconductor laser shown in Figure 1, the semiconductor laser that it is constructed for the ridged that does not have double channel.
In the semiconductor laser of present embodiment, by Zn diffusion will as laser absorption zone 16 more than or equal to 1 * 10
11Cm
-3High concentration impurity, being separated by is configured in the both sides of ridge 6 less than the interval d of 10 μ m greater than 5 μ m.
Free carrier by means of high concentration impurity absorbs the light that is distributed in the laser absorption zone, thereby follow the radiotherapy beam dimensionally stable of the horizontal direction that light output changes to get off, and can produce the element that the beam center of horizontal direction does not change along with the variation of light output.
In the semiconductor laser of present embodiment, have with execution mode 2 to 4 similar structures, oscillation wavelength is more than or equal to 701nm in the semiconductor laser smaller or equal to 900nm, be separated by greater than 5 μ m less than the interval d configuration laser absorption zone 16 of 10 μ m from the end of ridge 6.
By according to above-mentioned such laser absorption zone 16 that disposes, even thereby in oscillation wavelength is in more than or equal to 701nm smaller or equal to the semiconductor laser in the 900nm scope, can also make and follow the radiotherapy beam dimensionally stable of the horizontal direction that light output changes to get off, and can obtain the semiconductor laser that the beam center of horizontal direction does not change along with the variation of light output.
The semiconductor laser of present embodiment relate to a kind of have with similar structure, the oscillation wavelength of execution mode 2 to 4 be in more than or equal to 330nm smaller or equal to the semiconductor laser in the 600nm scope, wherein, the end from ridge 6 is separated by more than or equal to 0.7 μ m smaller or equal to the interval d configuration laser absorption zone 16 of 5.0 μ m.
In addition, in the semiconductor laser of present embodiment, substrate 1 by n type GaN constitute, lower caldding layer 2 by n type AlGaN constitute, active layer 3 by InGaN multiple quantum trap layer constitute, the 1st upper caldding layer is by p type Al
xGa
1-xN formation, the 2nd upper caldding layer are by p type Al
YGa
1-YN constitutes, contact layer is made of p type GaN.
By according to above-mentioned such laser absorption zone that disposes, even thereby in oscillation wavelength is in more than or equal to 330nm smaller or equal to the semiconductor laser in the 600nm scope, can also make and follow the radiotherapy beam dimensionally stable of the horizontal direction that light output changes to get off, and can obtain the semiconductor laser that the beam center of horizontal direction does not change along with the variation of light output.
The semiconductor laser of present embodiment relates to a kind of like this semiconductor laser, in the semiconductor laser shown in the execution mode 2～6, only in the facial laser absorption zone 16 that forms such as the die terminals of window zone 11 (with reference to Fig. 1) etc.
Its result can reduce the cost that is used to form laser absorption zone 16.
Figure 11 represents the stereogram of section of the semiconductor laser of present embodiment.Oscillation wavelength is in more than or equal to 601nm smaller or equal in the 700nm scope, and it is the situation of the semiconductor laser of the dual channel type ridged structure identical with Fig. 1.
In Figure 11, represent identical or suitable part with it with Fig. 1 and Fig. 2 mark something in common.To be separated by as the amorphous silicon layer in laser absorption zone 16 and be configured in the both sides of the width W c of ditch 15 less than the more closely-spaced d of 10 μ m more than or equal to the ridge 6 of the semiconductor laser of the ridged structure of 10 μ m greater than 5 μ m.
Thereby, be distributed in the light in laser absorption zone 16 by absorption, thereby follow the radiotherapy beam dimensionally stable of the horizontal direction that light output changes to get off, and can produce the semiconductor laser that the beam center of horizontal direction does not change along with the variation of light output.
Figure 12 is the stereogram of section of the semiconductor laser of present embodiment.Oscillation wavelength is in more than or equal to 601nm smaller or equal in the 700nm scope, and it is the situation of the semiconductor laser of the dual channel type ridged structure identical with Fig. 1.
As the protonation zone in laser absorption zone 16, being separated by is formed on the both sides of the width W c of ditch 15 more than or equal to the ridge 6 of the semiconductor laser of the ridged structure of 10 μ m greater than 5 μ m less than the more closely-spaced d of 10 μ m.Because the protonation zone is non-gain regions, pretending is to work in laser absorption zone 16.
Thereby, be distributed in the light in laser absorption zone 16 by absorption, thereby follow the radiotherapy beam dimensionally stable of the horizontal direction that light output changes to get off, and can produce the element that the beam center of horizontal direction does not change along with the variation of light output.
Figure 13 represents the stereogram of section of the semiconductor laser of present embodiment.The semiconductor laser of present embodiment, its oscillation wavelength are in more than or equal to 601nm smaller or equal in the 700nm scope, and it is the situation of the semiconductor laser of the dual channel type ridged structure identical with Fig. 1.
In the semiconductor laser of present embodiment, will be by the Zn diffusion more than or equal to 1 * 10
18Cm
-3The high concentration impurity as laser absorption zone 16, being separated by greater than 5 μ m is configured in the both sides of the width W c of ditch 15 more than or equal to the ridge 6 of the semiconductor laser of the ridged structure of 10 μ m less than the interval d of 10 μ m.
Its result, free carrier by means of the Zn diffusion zone absorbs the light that is distributed in laser absorption zone 16, thereby follow the radiotherapy beam dimensionally stable of the horizontal direction that light output changes to get off, and can produce the semiconductor laser that the beam center of horizontal direction does not change along with the variation of light output.
Execution mode 11
The semiconductor laser of present embodiment relates to a kind of oscillation wavelength and is in more than or equal to 701nm smaller or equal to having the semiconductor laser of analog structure in the 900nm scope and with execution mode 8 to 10, wherein, be separated by from the end of ridge 6 that the more closely-spaced d less than 10 μ m has disposed laser absorption zone 16 greater than 5 μ m.
Owing to have said structure, thereby follow the radiotherapy beam dimensionally stable of the horizontal direction that light output changes to get off, and can produce the element that the beam center of horizontal direction does not change along with the variation of light output.
The semiconductor laser of present embodiment relates to a kind of oscillation wavelength and is in more than or equal to 330nm smaller or equal to having the semiconductor laser of analog structure in the 600nm scope and with execution mode 8 to 10, wherein, be separated by from the end of ridge 6 that the interval d smaller or equal to 5.0 μ m has disposed laser absorption zone 16 more than or equal to 0.7 μ m.
Its result follows the dimensionally stable of the radiotherapy beam of the horizontal direction that light output changes to get off, and the beam center that can produce horizontal direction does not change along with light output and the semiconductor laser that changes.
The semiconductor laser of present embodiment relates to the semiconductor laser of execution mode 8 to 12, wherein, and only in the facial laser absorption zone 16 that forms of die terminals that has formed window zone 11 (with reference to Figure 11) etc.
Its result can suppress manufacturing cost.
Claims (13)
1. semiconductor laser possesses ridge, is positioned at the both sides of described ridge, and each outside that clips the groove of described ridge and be positioned at described groove has the semiconductor layer of the equivalent refractive index bigger than the equivalent refractive index of described groove,
Described semiconductor laser is with the semiconductor laser of the dual channel type ridged structure of fundamental mode vibration, it is characterized in that:
The electric field of the light of described fundamental mode is exuded to described semiconductor layer one side from the border of described groove and described semiconductor layer, and is absorbed by described semiconductor layer.
2. semiconductor laser as claimed in claim 1 is characterized in that:
The seepage discharge of the electric field of the light of described fundamental mode is defined as, and the electric field E1 that makes at the center of described ridge and the electric field E2 on the described border between described groove and described semiconductor layer satisfy (E2/E1) 〉=0.01%.
3. semiconductor laser as claimed in claim 1 is characterized in that:
The oscillation wavelength of the light of described fundamental mode is in more than or equal to 601nm smaller or equal in the 700nm scope,
The width of described groove be in greater than 5 μ m less than 10 μ m than in the close limit.
4. semiconductor laser as claimed in claim 1 is characterized in that:
The oscillation wavelength of the light of described fundamental mode is in more than or equal to 701nm smaller or equal in the 900nm scope,
The width of described groove be in greater than 5 μ m less than 10 μ m than in the close limit.
5. semiconductor laser as claimed in claim 1 is characterized in that:
The oscillation wavelength of the light of described fundamental mode is in more than or equal to 330nm smaller or equal in the 600nm scope,
The width of described groove is in more than or equal to 0.7 μ m in the scope smaller or equal to 5.0 μ m.
6. as any described laser of claim 1～5, it is characterized in that,
Described semiconductor layer is made of in amorphous silicon layer, ion implanted region territory and the diffusion of impurities zone each.
7. semiconductor laser, possessing equivalent refractive index is n
1Ridge, equivalent refractive index be n
2Described ridge both sides the zone and in the both sides of described ridge, with the end of described ridge across predetermined distance d, can absorb the laser absorption zone of laser,
Described semiconductor laser is with the semiconductor laser of the ridged structure of fundamental mode vibration, it is characterized in that:
The electric field of the light of described fundamental mode is n from described refractive index
2The described zone and the border in described laser absorption zone be exuded to described laser absorption zone one side, and absorbed by described laser absorption zone.
8. semiconductor laser as claimed in claim 7 is characterized in that: also possess
Be positioned at the both sides of described ridge, clip described ridge groove and
The layer in the outside of described groove,
The width W c of described groove is greater than described predetermined distance d.
9. semiconductor laser as claimed in claim 7 is characterized in that:
In the scope of the oscillation wavelength of the light of described fundamental mode more than 601nm, below the 700nm,
In the scope of described predetermined distance d more than 5 μ m, below the 10 μ m.
10. semiconductor laser as claimed in claim 7 is characterized in that:
In the scope of the oscillation wavelength of the light of described fundamental mode more than 701nm, below the 900nm,
In the scope of described predetermined distance d more than 5 μ m, below the 10 μ m.
11. semiconductor laser as claimed in claim 7 is characterized in that:
In the scope of the oscillation wavelength of the light of described fundamental mode more than 330nm, below the 600nm,
In the scope of described predetermined distance d more than 0.7 μ m, below the 5.0 μ m.
12. each the described semiconductor laser as in the claim 7～11 is characterized in that:
Described laser absorption zone only is arranged on the die terminals face.
13. each the described semiconductor laser as in the claim 7～11 is characterized in that:
Described laser absorption zone is made of in amorphous silicon layer, ion implanted region territory and the diffusion of impurities zone each.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004327622 | 2004-11-11 | ||
| JP2004327622 | 2004-11-11 | ||
| JP2005286328 | 2005-09-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1783605A CN1783605A (en) | 2006-06-07 |
| CN100382399C true CN100382399C (en) | 2008-04-16 |
Family
ID=36773484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101194772A Active CN100382399C (en) | 2004-11-11 | 2005-11-11 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100382399C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009283605A (en) * | 2008-05-21 | 2009-12-03 | Mitsubishi Electric Corp | Semiconductor laser |
| JP2013201294A (en) * | 2012-03-26 | 2013-10-03 | Mitsubishi Electric Corp | Capping device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4835788A (en) * | 1987-07-01 | 1989-05-30 | Nec Corporation | Distributed feedback semiconductor laser |
| JPH02264488A (en) * | 1989-04-05 | 1990-10-29 | Mitsubishi Electric Corp | Semiconductor laser device |
| US6031857A (en) * | 1996-05-21 | 2000-02-29 | Kabushiki Kaisha Toshiba | Semiconductor device having a current-constricting spaces and method of manufacturing the device |
| JP2002344086A (en) * | 2001-05-17 | 2002-11-29 | Matsushita Electric Ind Co Ltd | Semiconductor laser and manufacturing method therefor |
| JP2003060308A (en) * | 2001-08-08 | 2003-02-28 | Mitsubishi Electric Corp | Semiconductor laser |
| CN1445892A (en) * | 2002-03-19 | 2003-10-01 | 三菱电机株式会社 | Ridge waveguide type semiconductor laser device |
-
2005
- 2005-11-11 CN CNB2005101194772A patent/CN100382399C/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4835788A (en) * | 1987-07-01 | 1989-05-30 | Nec Corporation | Distributed feedback semiconductor laser |
| JPH02264488A (en) * | 1989-04-05 | 1990-10-29 | Mitsubishi Electric Corp | Semiconductor laser device |
| US6031857A (en) * | 1996-05-21 | 2000-02-29 | Kabushiki Kaisha Toshiba | Semiconductor device having a current-constricting spaces and method of manufacturing the device |
| JP2002344086A (en) * | 2001-05-17 | 2002-11-29 | Matsushita Electric Ind Co Ltd | Semiconductor laser and manufacturing method therefor |
| JP2003060308A (en) * | 2001-08-08 | 2003-02-28 | Mitsubishi Electric Corp | Semiconductor laser |
| CN1445892A (en) * | 2002-03-19 | 2003-10-01 | 三菱电机株式会社 | Ridge waveguide type semiconductor laser device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1783605A (en) | 2006-06-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5728605A (en) | Method for producing an optical semiconductor device having a carrier injection path or an electric-field applying path | |
| JP2003069153A (en) | Semiconductor optical device and integration type optical semiconductor device | |
| US9153942B2 (en) | Method of manufacturing semiconductor device | |
| EP0160515B1 (en) | A semiconductor laser | |
| CN101588020B (en) | Semiconductor laser | |
| EP0209387A2 (en) | Semiconductor laser device | |
| CN100382399C (en) | Semiconductor laser | |
| JP3857294B2 (en) | Semiconductor laser | |
| CN113906640B (en) | Semiconductor optical integrated element and method for manufacturing semiconductor optical integrated element | |
| DE60020184T2 (en) | Embedded heterostructure for lasers and light-emitting diodes | |
| US5441912A (en) | Method of manufacturing a laser diode | |
| US6549554B2 (en) | Semiconductor laser element, semiconductor etchant, and method of fabricating the semiconductor laser element | |
| KR20010085668A (en) | Method of fabricating a semiconductor light-emitting device and the semiconductor light-emitting device | |
| US4821278A (en) | Inverted channel substrate planar semiconductor laser | |
| US5805628A (en) | Semiconductor laser | |
| US4677633A (en) | Semiconductor laser with a two-striped channel | |
| JP4164248B2 (en) | Semiconductor element, manufacturing method thereof, and semiconductor optical device | |
| CN113540969B (en) | Electric modulation laser with bias voltage circuit and manufacturing method thereof | |
| JPH0936472A (en) | Semiconductor laser element | |
| CN117581433A (en) | Semiconductor optical element | |
| JP2006295229A (en) | Semiconductor laser | |
| JPS60126883A (en) | Semiconductor laser device | |
| JPH0730190A (en) | Semiconductor laser and its manufacture | |
| JPS58192394A (en) | Semiconductor laser device | |
| JP2000058979A (en) | Semiconductor optical waveguide element and manufacture thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |