CN100375345C - Cavity-dumped laser - Google Patents
Cavity-dumped laser Download PDFInfo
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- CN100375345C CN100375345C CNB2004100954162A CN200410095416A CN100375345C CN 100375345 C CN100375345 C CN 100375345C CN B2004100954162 A CNB2004100954162 A CN B2004100954162A CN 200410095416 A CN200410095416 A CN 200410095416A CN 100375345 C CN100375345 C CN 100375345C
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Abstract
The present invention relates to a cavity-dumping laser comprising a pockels' box whose electrode is connected with a high-voltage pulse circuit and a semiconductor photoconductive switch. The present invention solves the technical problems of high energy loss, complicated circuit structure, poor stability, large system volume and high requirement for working conditions in the prior art.
Description
One, technical field
The present invention relates to a kind of cavity-dumping laser.
Two, background technology
Several nanoseconds to the laser pulse of subnanosecond between adjustable Q laser pulse (typical pulse-widths is more than 10～100 ns) and mode-locked laser pulse (1～tens ps).This laser pulse can be applied in laser ranging, pulse fluorescence measurement, the research that short pulse is propagated and amplified, the research of optical damage, the research of laser fusion and optical parameter chirped pulse amplification etc.The technology that produces this laser pulse mainly contains these two kinds of slicing technology and cavity dumping technology.
Because the slicing technology is to utilize quick high-pressure electric impulse signal control electro-optical device, intercepts out a bit of waveform on a long laser pulse shape, thereby produces a narrow laser pulse of the original laser pulse pulsewidth of ratio.Therefore, this technology inevitably produces following shortcoming:
1, energy loss is big.Because what produced intercepts to such an extent that the laser burst pulse is the sub-fraction energy of original laser pulse, so energy loss is big.
2, circuit structure complexity.Want to produce the how narrow laser pulse of pulsewidth, must there be (or corresponding rising edge and trailing edge) high electric field pulse signal of corresponding pulsewidth to be complementary with it, as: produce the laser pulse of 1ns, must be that the high-voltage pulse signal of 1ns drives electro-optical device with pulsewidth just.Therefore high especially to the requirement of high-voltage pulse circuit, thus the complex structure of circuit caused, and cost increases.
3, poor stability.Because it is bigger that the stability of high electric field pulse is difficult to do the gitter of height, particularly rising edge or trailing edge, therefore cause the laser pulse poor stability of generation easily.
4, system bulk is big.Because the slicing technology is a kind of technology that the laser pulse of laser oscillator generation carries out shaping, must add the slicing light path in the laser oscillator outside, easily causes system bulk big.
The cavity dumping technology is to produce the effective ways of several nanoseconds to subnanosecond laser pulse.Its basic principle is: allow laser set up laser generation earlier in the front/back cavity mirror is the resonant cavity of total reflective mirror, when the laser power density in the chamber reaches maximum, by one fast the electro-optical device in the high electric field pulse control chamber rapidly the whole radiation of the laser energy in the chamber are outputed to outside the chamber, this just can obtain a pulsewidth the narrowest is that (L is that the chamber is long to 2L/c; C is the light velocity) laser pulse.Method commonly used at present is to utilize two-way gap, thyratron or avalanche transistor string to produce the electro-optical device of high electric field pulse control fast to realize cavity dumping, the interior loss size of electro-optical device control chamber that the control chamber of wherein leading up to is interior, make laser in the chamber, set up vibration, by the electro-optical device in the control chamber the whole laser energies couplings in the resonant cavity are outputed to outside the chamber when then the power density in resonant cavity reaches maximum on another road.Realize that in this way there is following shortcoming in cavity dumping:
1, condition of work requires high.The high electric field pulse forward position is generally in several nanoseconds faster for the ratio that present usefulness gap, thyratron and avalanche transistor string produce, and the requirement of the relative cavity dumping of this speed still is slow.Particularly, higher to the rate request of high electric field pulse for the long laser oscillator of short cavity.
2, poor stability.Owing to the time stability of the quick high-pressure electric pulse that produces with gap, thyratron and avalanche transistor string is poor, therefore cause the poor stability of output laser pulse.
3, circuit structure complexity.To oscillate to this section of output laser pulse time difference be not what fix because laser begins to set up in resonant cavity in addition, rock but have a regular hour, generally all fix with the time difference between the two-way high-voltage pulse output signal, this will cause the laser pulse instability exported.More stable for the laser pulse that makes output, must add the light feedback control circuit in addition, this causes circuit structure complicated more, and influences the speed of high-voltage pulse circuit.
Three, summary of the invention
The invention solves that the energy loss that exists in the background technology is big, circuit structure is complicated, poor stability, system bulk is big and the demanding technical problem of condition of work.
Technical solution of the present invention is: the present invention includes Pockers cell, its special character is: be connected to high-voltage pulse circuit on the electrode of described Pockers cell and semiconductor optoelectronic is led switch.
Above-mentioned high-voltage pulse circuit and semiconductor optoelectronic are led switch and are connected on the electrode of Pockers cell.
Above-mentioned high-voltage pulse circuit comprises resistance R 2, switching circuit S1 and high voltage source HV1, the end of switching circuit S1 connects the electrode P2 and the ground connection of Pockers cell respectively by resistance R 2, another termination high voltage source HV1, semiconductor optoelectronic is led the electrode P2 of a termination Pockers cell of switch, the contact of the other end and resistance R 2 and switching circuit S1 joins, and the electrode P1 of Pockers cell meets high voltage source HV2.
The above resistance R 2 and switching circuit S1 go up also and are connected to resistance R 1 and capacitor C.
Above-mentioned high-voltage pulse circuit and semiconductor optoelectronic are led switch and are connected on respectively on two electrodes of Pockers cell.
Above-mentioned high-voltage pulse circuit comprises resistance R 4, switching circuit S2 and high voltage source HV4, the end of switching circuit S2 meets the electrode P3 of Pockers cell respectively and passes through resistance R 4 ground connection, another termination high voltage source HV4, the end that semiconductor optoelectronic is led switch meets the electrode P4 of Pockers cell respectively and meets high voltage source HV3, other end ground connection by resistance R 3.
Said switching circuit is avalanche transistor switching circuit, high-power MOS tube switching circuit, thyratron switch circuit or spark extinguishing switch circuit.
High pressure resistant, high-speed response that the present invention adopts does not have the semiconductor optoelectronic rock and leads switch in conjunction with high-voltage pulse circuit, and the electrooptic crystal in the control resonant cavity to be reaching the adjusting cavity loss, thereby realizes cavity dumping.The foundation of the high-voltage pulse signal control resonant cavity inner laser vibration that high-voltage pulse circuit produces, semiconductor optoelectronic is led the then responsible laser energy that will be stored in the resonant cavity of switch and is all turned, and outputs to outside the chamber.Because semiconductor optoelectronic is led switch can be high pressure resistant, the high-voltage pulse signal that therefore fully can output amplitude meets the demands is effectively controlled electrooptic crystal.And semiconductor optoelectronic to lead the response speed of switch very fast, the fastest can reach several psecs, this switching speed is considerably beyond the top device speed of mentioning.Because semiconductor optoelectronic is led switch foot and is utilized the work of light trigger switch, thus the dynamic light signal fed back of photoconductivity switching, make that the laser pulse of output is very stable, can improve the application prospect of several nanoseconds greatly to the subnanosecond laser.Therefore the present invention has following advantage:
1, circuit is simple.Because the present invention has only used a semiconductor optoelectronic to lead that road high-voltage pulse circuit and feedback control circuit that switch just can replace controlling coupling output laser fully, thereby simplifies circuit structure greatly, has improved the reliability of circuit;
2, stability is high.Because the semiconductor optoelectronic that the present invention adopts is led switch and is had ultrafast speed, makes that the efficient of cavity dumping is higher, can be in the shorter time the output that is coupled rapidly of the energy in the chamber, so can obtain narrower laser pulse;
3, volume is little.The volume of leading switch owing to semiconductor optoelectronic is very little, therefore can effectively reduce the volume of circuit.
Four, description of drawings
Fig. 1 is the structural representation of the embodiment of the invention one;
Fig. 2 is the sequential chart that the cavity dumping laser pulse of the embodiment of the invention one structure is set up;
Fig. 3 is the structural representation of the embodiment of the invention two.
Five, embodiment
Referring to Fig. 1, the present invention includes Pockers cell 3, Effect of Back-Cavity Mirror 2, polarizer 4 and front cavity mirror 5, be connected to high-voltage pulse circuit 6 on the electrode P2 of Pockers cell 3 and semiconductor optoelectronic is led switch 1, high-voltage pulse circuit 6 comprises resistance R 2, switching circuit S1 and high voltage source HV1, the end of switching circuit S1 connects the electrode P2 and the ground connection of Pockers cell respectively by resistance R 2, another termination high voltage source HV1, semiconductor optoelectronic is led the electrode P2 of a termination Pockers cell of switch, the contact of the other end and resistance R 2 and switching circuit S1 joins, the electrode P1 of Pockers cell meets high voltage source HV2, and resistance R 2 and switching circuit S1 go up also and be connected to resistance R 1 and capacitor C.
Referring to Fig. 2, the electrode P of Pockers cell 3
1Adding negative 1/4 wavelength voltage always.When pumping source began the pumping laser operation material, resonant cavity was in high loss state always, and laser can't be set up vibration in resonant cavity.Up to t
1Constantly, when last energy level inverted population reached maximum, switching circuit S1 closure was given the electrode P of Pockers cell rapidly
2Add negative 1/4 a wavelength voltage, the electrical potential difference of 3 two electrodes of Pockers cell this moment is 0, and the loss in the chamber at this moment becomes low-loss by high loss rapidly, and laser begins starting of oscillation in the chamber.At t
2Constantly, the number of photons in the chamber approaches maximum, and at this moment the light leak with Effect of Back-Cavity Mirror 2 triggers and resistance R
2Semiconductor optoelectronic in parallel is led switch 1 rapidly the electrode P of Pockers cell 3
2Negative 1/4 wavelength voltage return electrode P
2The voltage vanishing, the electrode potential difference at Pockers cell 3 two ends is 1/4 wavelength voltage, resonant cavity is in high loss state, linearly polarized light is from front cavity mirror 5 process polarizers 4, become circularly polarized light through Pockers cell 3 again, produce the phase difference of pi/2, through the reflection of Effect of Back-Cavity Mirror 2, circularly polarized light passes through Pockers cell 3 once more, become linearly polarized light, produce the phase difference of pi/2 again, twice process of polarised light this moment Pockers cell 3, the phase difference of generation π, its polarization direction has rotated 90 °, just in time vertical with the polarization direction of polarizer 4, thus laser in the chamber through one back and forth, be slightly larger than the laser pulse of 2L/c from the side of polarizer 4 pulsewidth of output.
Referring to Fig. 3, another kind of circuit structure of the present invention is that high-voltage pulse circuit 6 and semiconductor optoelectronic are led on two the electrode P3 and P4 that switch 1 is connected on Pockers cell 3 respectively, high-voltage pulse circuit 6 comprises resistance R 4, switching circuit S2 and high voltage source HV4, the end of switching circuit S2 meets the electrode P3 of Pockers cell respectively and passes through resistance R 4 ground connection, another termination high voltage source HV4, the end that semiconductor optoelectronic is led switch meets the electrode P4 of Pockers cell respectively and meets high voltage source HV3, other end ground connection by resistance R 3.Its operation principle is the same.
Claims (3)
1. cavity-dumping laser, comprise Pockers cell, it is characterized in that: be connected to high-voltage pulse circuit on the electrode of described Pockers cell and semiconductor optoelectronic is led switch, described high-voltage pulse circuit and semiconductor optoelectronic are led switch and are connected on the electrode of Pockers cell, described high-voltage pulse circuit comprises resistance R 2, switching circuit S1 and high voltage source HV1, the end of described switching circuit S1 connects the electrode P2 and the ground connection of Pockers cell respectively by resistance R 2, another termination high voltage source HV1, described semiconductor optoelectronic is led the electrode P2 of a termination Pockers cell of switch, the contact of the other end and resistance R 2 and switching circuit S1 joins, and the electrode P1 of described Pockers cell meets high voltage source HV2.
2. cavity-dumping laser according to claim 1 is characterized in that: described resistance R 2 and switching circuit S1 go up also and are connected to resistance R 1 and capacitor C, resistance R 1 and capacitor C series connection.
3. cavity-dumping laser according to claim 1 and 2 is characterized in that: described switching circuit S1 is avalanche transistor switching circuit, high-power MOS tube switching circuit, thyratron switch circuit or spark extinguishing switch circuit.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100954162A CN100375345C (en) | 2004-12-31 | 2004-12-31 | Cavity-dumped laser |
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| CNB2004100954162A CN100375345C (en) | 2004-12-31 | 2004-12-31 | Cavity-dumped laser |
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| CNB2007101267217A Division CN100495834C (en) | 2004-12-31 | 2004-12-31 | Cavity dumped laser |
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| CN100375345C true CN100375345C (en) | 2008-03-12 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976798B (en) * | 2010-08-16 | 2011-12-14 | 山东大学 | Method for improving performance of DKDP crystal pockels cell |
| CN104617480B (en) * | 2015-02-13 | 2018-02-02 | 中国工程物理研究院激光聚变研究中心 | A kind of pulsed laser energy stabilising arrangement and its energy stabilization method |
| CN105450209B (en) | 2015-12-17 | 2018-10-30 | 中国科学院上海硅酸盐研究所 | A kind of the controlled cleaving method and its device of heavy current pulse |
| CN106229807B (en) * | 2016-09-27 | 2019-07-23 | 中国科学技术大学 | A kind of laser pulse generation device of CFS center frequency stabilization power amplification |
| CN110854672A (en) * | 2019-12-18 | 2020-02-28 | 南京先进激光技术研究院 | Electro-optically Q-switched intracavity frequency doubling subnanosecond pulse green laser |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1065558A (en) * | 1991-04-04 | 1992-10-21 | 中国科学院上海光学精密机械研究所 | From motion tracking menu longitudinal mode, accent Q and locked mode method |
| CN1073052A (en) * | 1991-12-07 | 1993-06-09 | 中国科学院上海光学精密机械研究所 | High-precision synchronous controller |
| US6021154A (en) * | 1997-11-21 | 2000-02-01 | General Electric Company | Laser shock peening method and reflective laser beam homogenizer |
| US6580732B1 (en) * | 2000-07-14 | 2003-06-17 | Litton Systems, Inc. | Multiple mode laser |
-
2004
- 2004-12-31 CN CNB2004100954162A patent/CN100375345C/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1065558A (en) * | 1991-04-04 | 1992-10-21 | 中国科学院上海光学精密机械研究所 | From motion tracking menu longitudinal mode, accent Q and locked mode method |
| CN1073052A (en) * | 1991-12-07 | 1993-06-09 | 中国科学院上海光学精密机械研究所 | High-precision synchronous controller |
| US6021154A (en) * | 1997-11-21 | 2000-02-01 | General Electric Company | Laser shock peening method and reflective laser beam homogenizer |
| US6580732B1 (en) * | 2000-07-14 | 2003-06-17 | Litton Systems, Inc. | Multiple mode laser |
Non-Patent Citations (1)
| Title |
|---|
| 调Q激光脉冲的腔内时间整形. 郭小东等.光学学报，第15卷第8期. 1995 * |
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Owner name: XI AN ZHONGKE LICHI PHOTOVOLTAICS TECHNOLOGY CO., Free format text: FORMER OWNER: XI AN CHINA SCIENCES GROUP BUFFING MACHINE INVESTMENT HOLDING CO., LTD. Effective date: 20150128 |
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Effective date of registration: 20150128 Address after: 710119, Shaanxi hi tech Zone, new industrial park, 17 information Avenue, ancestral floor, three floor Patentee after: Xi'an center Photoelectric Technology Co., Ltd. Address before: 710119, Shaanxi Province, Xi'an hi tech Zone, new industrial park, 17 information Avenue, ancestral building on the third floor, room 323 Patentee before: XI'AN INSTITUTE OF OPTICS AND PRECISION MECHANICS OF CAS |
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Effective date of registration: 20160218 Address after: 710000, 204, arc building, No. 60, West Avenue, new industrial park, Shaanxi, Xi'an Patentee after: Shaanxi optoelectronic integrated circuit pilot Technology Research Institute Co Ltd Address before: 710119, Shaanxi province hi tech Zone, Xi'an new industrial park, 17 information Avenue, the same floor, three floor Patentee before: Xi'an center Photoelectric Technology Co., Ltd. |