CN100373596C - Ball grid array package substrate, manufacturing method thereof and ball grid array package structure thereof - Google Patents
Ball grid array package substrate, manufacturing method thereof and ball grid array package structure thereof Download PDFInfo
- Publication number
- CN100373596C CN100373596C CNB2004100745839A CN200410074583A CN100373596C CN 100373596 C CN100373596 C CN 100373596C CN B2004100745839 A CNB2004100745839 A CN B2004100745839A CN 200410074583 A CN200410074583 A CN 200410074583A CN 100373596 C CN100373596 C CN 100373596C
- Authority
- CN
- China
- Prior art keywords
- patterned metal
- ball
- layer
- opening
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 84
- 229910052751 metal Inorganic materials 0.000 claims abstract description 84
- 238000004806 packaging method and process Methods 0.000 claims abstract description 48
- 229910000679 solder Inorganic materials 0.000 claims abstract description 34
- 230000003014 reinforcing effect Effects 0.000 claims abstract 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
- 230000002787 reinforcement Effects 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 238000005728 strengthening Methods 0.000 description 55
- 238000003466 welding Methods 0.000 description 37
- 238000005538 encapsulation Methods 0.000 description 12
- 238000010276 construction Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 5
- 238000007772 electroless plating Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002153 concerted effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Packaging Frangible Articles (AREA)
Abstract
The invention discloses a ball grid array package substrate and a manufacturing method thereof, and provides a substrate body, wherein at least one ball-receiving pad and a solder mask layer are formed on the surface of the substrate body, the solder mask layer is provided with an opening corresponding to the ball-receiving pad, so that the ball-receiving pad is provided with an exposed surface exposed to the opening of the solder mask layer, a patterned metal reinforcing layer is formed on the exposed surface along one side wall of the opening of the solder mask layer, the patterned metal reinforcing layer is positioned in the range of the opening, so that the side wall of the opening is not directly contacted with a solder ball, and the solder ball can be reflowed to the ball-receiving pad and the patterned metal reinforcing layer, so that the bonding area is increased, and the ball thrust property of the solder ball is improved. The invention also discloses a ball grid array packaging structure comprising the ball grid array packaging substrate, wherein the packaging structure further comprises a chip arranged on the packaging substrate; a plurality of solder balls implanted on the ball pads; the packaging structure can reduce the influence of the solder mask layer on the solder balls, increase the joint area of the solder balls on the ball grid array packaging substrate and improve the ball thrust of the solder balls.
Description
Technical field
The present invention is relevant for a kind of substrate that is applicable to semiconductor packages, particularly relevant for a kind of base plate for packaging that is applicable to the sphere grid array encapsulation, and manufacture method, comprises the packaging structure of this base plate for packaging.
Background technology
Known sphere grid array base plate for packaging is in order to the bearing semiconductor chip, this substrate has a plurality of pads of receiving (ball pad), connect soldered ball to plant, outside as this ball grid array encapsulation construction electrically connects, yet after this ball grid array encapsulation construction utilizes those soldered balls and outside to electrically connect, can be when work because thermal stress makes those soldered balls and the generation of this sphere grid array base plate for packaging combine bad, a kind of substrate body that is disclosed as Taiwan patent announcement No. 491410 " in order to the substrate body of packaged semiconductor and the packaging structure of formation thereof " in order to packaged semiconductor, it is a sphere grid array base plate for packaging, this sphere grid array base plate for packaging is in order to electrically connect with a chip, this chip can be electrically conducted the outside via planting the soldered ball that is connected to this sphere grid array base plate for packaging, yet known sphere grid array base plate for packaging is the plain cushion shape in order to the pad of receiving that engages with those soldered balls, soldered ball is incorporated into the plane that appears of this pad of receiving, and those planes that appear of receiving pad are limited by the opening of a welding resisting layer, so soldered ball is less with the bonded area of the pad of receiving, therefore this semiconductor packaging structure possibility be subjected to thermal stress and make those soldered balls make a concerted effort to weaken to the planar junction that appears of the pad of receiving when work.
Summary of the invention
Main purpose of the present invention is to provide a kind of sphere grid array base plate for packaging, one pattern metal strengthening course is to be formed at along the opening sidewalls of welding resisting layer on the pad of receiving of this substrate, plant and be connected to those soldered balls of receiving pad and will have bigger bonding area, to promote the ball thrust performance of soldered ball.
A further object of the present invention is to provide a kind of sphere grid array base plate for packaging, one pattern metal strengthening course is formed at the pad of receiving of this substrate, the middle section of pad is for appearing shape so that this is received, be bonded on middle section and this pattern metal strengthening course of this pad of receiving for soldered ball, reduce of the influence of this welding resisting layer, and promote the ball thrust performance of soldered ball soldered ball.
A further object of the present invention is to provide a kind of ball grid array encapsulation construction, and it can reduce the influence of this welding resisting layer to soldered ball, and promotes the ball thrust performance of soldered ball.
A further object of the present invention is to provide a kind of manufacture method of sphere grid array base plate for packaging, utilize a covering be formed at one of a substrate body receive the pad on, make it partly cover the surface that appears of those pads of receiving, be formed at along the opening sidewalls of a welding resisting layer on this pad of receiving in order to a pattern metal strengthening course, but do not hide the middle section of this pad of receiving, soldered ball can be planted and is connected on this receive pad and this pattern metal strengthening course, to promote the ball thrust performance of soldered ball.
Sphere grid array base plate for packaging of the present invention, it includes a substrate body, this substrate body has a surface, for grafting soldered ball, at least one pad and welding resisting layer of receiving is formed at this surface of this substrate body, this welding resisting layer has at least one opening, partly to appear this pad of receiving, one pattern metal strengthening course is formed at the surface that appears of this pad of receiving along a sidewall of the opening of this welding resisting layer, and this pattern metal strengthening course is positioned at the scope of this opening, and preferably, this pattern metal strengthening course appears a middle section of this pad of receiving, to increase the bonding area of soldered ball on this sphere grid array base plate for packaging, promote the ball thrust of soldered ball.
Ball grid array encapsulation construction of the present invention comprises aforesaid sphere grid array base plate for packaging, and other comprises a chip, is located on this base plate for packaging; And a plurality of soldered balls, it is planted and is connected to those pads of receiving.Packaging structure of the present invention, increase soldered ball with the pattern metal strengthening course and plant the bonding area that is connected to this sphere grid array base plate for packaging, and those pattern metal strengthening courses are along the sidewall of the opening of this welding resisting layer and be shaped, and this pattern metal strengthening course is positioned at the scope of this opening, so can reduce of the influence of this welding resisting layer to those soldered balls, increase the bonding area of soldered ball on the sphere grid array base plate for packaging, promote the ball thrust of soldered ball.
The manufacture method of sphere grid array base plate for packaging of the present invention, it is as follows that it comprises step: a substrate body is provided, this substrate body has a surface, be formed with at least one pad of receiving on this surface, on the surface of this substrate body, form a welding resisting layer again, this welding resisting layer has an opening, partly to appear this pad of receiving, go up formation one covering in the surface that appears of this pad of receiving again, this covering is the surface that appears that partly covers this pad of receiving, for example cover a middle section of this pad of receiving, this covering can be on the surface that a dry film is formed at this substrate body and through exposure, develop, cleaning forms, then, utilize metallide again, electroless plating (electroless plating) or sputtering way form a pattern metal strengthening course, it is the surface that appears that is formed at this pad of receiving along a sidewall of the opening of this welding resisting layer, and this pattern metal strengthening course is positioned at the scope of this opening, preferably, this pattern metal strengthening course is not appeared surperficial shape and patterning formation by what this covering covered according to this pad of receiving, it is arranged on this pad of receiving, at last, remove this covering, to manifest the surface that appears of receiving and filling up that is not covered by this pattern metal strengthening course, preferably, form a nickel/gold layer with plating mode again, to cover this receive pad and this pattern metal strengthening course, make those receive pad and these pattern metal strengthening courses not oxidized and be beneficial to and combine soldered ball in encapsulation process, plant the bonding area that is connected to this sphere grid array base plate for packaging to increase soldered ball, promote the ball thrust of soldered ball.
Description of drawings
Fig. 1 is according to a specific embodiment of the present invention, a kind of sectional view of sphere grid array base plate for packaging.
Fig. 2 A to 2E is according to a specific embodiment of the present invention, the substrate body sectional view in sphere grid array base plate for packaging manufacture process.
Fig. 3 A to 3C is according to the present invention, the pad end face schematic diagram of receiving of the substrate body of different pattern metal reinforcement layer change of shape in a plurality of embodiment.
Fig. 4 is according to a specific embodiment of the present invention, a kind of sectional view that comprises the ball grid array encapsulation construction of this substrate body.
The component symbol explanation
100...... base plate for packaging 110...... substrate body
The pad 111...... surperficial 120...... receives
121...... appear surperficial 130...... welding resisting layer
131...... opening 132...... sidewall
133...... upper surface 140...... pattern metal strengthening course
140A...... the discontinuous bullion strengthening course of circular ring metal strengthening course 140B......
140C...... discontinuous curved metal strengthening course 150...... nickel/gold layer
160...... covering 200...... ball grid array encapsulation construction
210...... chip 211...... bonding wire
220...... soldered ball 230...... packaging body
Embodiment
According to a specific embodiment of the present invention, see also shown in Figure 1, a kind of sphere grid array base plate for packaging 100, it includes a substrate body 110, a plurality of pads 120 of receiving, one welding resisting layer 130 and a pattern metal strengthening course 140, this substrate body 110 has one can be for the surface 111 of surface engagement, be formed with those receive pad 120 and this welding resisting layers 130 on the surface 111 of this substrate body 110, this welding resisting layer 130 has a plurality of openings 131, partly to appear those corresponding pads 120 of receiving, make each pad 120 of receiving have one and appear surface 121, and each opening 131 can be circular or square etc. and has at least one sidewall 132, this pattern metal strengthening course 140 be along the sidewall 132 of each opening 131 of this welding resisting layer 130 and patterning be formed at correspondence receive the pad 120 appearing the surface 121 on, preferably, this pattern metal strengthening course 140 is the sidewalls 132 that closely contact this welding resisting layer 130.See also shown in Fig. 3 A to Fig. 3 C, can be shape miscellaneous at each pad this pattern metal strengthening course 140 on 120 of receiving, example circular ring metal strengthening course 140A, the discontinuous bullion strengthening course 140B shown in Fig. 3 B or the discontinuous curved metal strengthening course 140C shown in Fig. 3 C or the like as shown in Figure 3A.The material of those pattern metal strengthening courses 140 is to be selected from copper, nickel and alloy group thereof.What these pattern metal strengthening course 140 right and wrong partly were covered in this pad 120 of receiving all sidedly appears surface 121, in the present embodiment, this pattern metal strengthening course 140 manifests this middle section that appears surface 121, and each of this welding resisting layer 130 is opened and is not more than the corresponding pad 120 of receiving for 1 mouthful 31, and pad 120 defines pad (Solder Mask Defined pad) for welding resisting layer so that those are received.Preferably, this pattern metal strengthening course 140 is the upper surfaces 133 that are raised in this welding resisting layer 130 slightly, and covers the sidewall 132 of the opening 131 of this welding resisting layer 130 fully.In the present embodiment, this pattern metal strengthening course 140 is along those opening 131 local coverings to the sidewall 132 of this opening 131 of this welding resisting layer 130, therefore, this pattern metal strengthening course 140 makes those pads 120 of receiving that a nonplanar face and can resist the opening sidewalls 132 of living this welding resisting layer 130 of receiving can be provided, for engaging soldered ball, and the increase soldered ball is planted the bonding area that is connected to this sphere grid array base plate for packaging 100, and reduce the influence of 130 pairs of soldered balls of this welding resisting layer and promote the ball thrust of soldered ball, preferably, one nickel/gold layer, 150 or one a prewelding material (pre-solder) is to cover to be formed at those receive pad 120 and this pattern metal strengthening courses 140, makes those pads 120 of receiving not oxidized and combine with soldered ball easily in encapsulation process.
See also shown in Figure 4, soldered ball 220 materials that these pattern metal strengthening course 140 materials must combine with it are inequality, and the fusing point of this pattern metal strengthening course 140 should be higher than the fusing point of corresponding soldered ball 220, not to be fused to those soldered balls 220, therefore, when reflow soldered ball 220, this pattern metal strengthening course 140 has enough hardness and can be shaped along those opening sidewalls 132 that are formed at this welding resisting layer 130.As shown in Figure 4, soldered ball 220 can firmly be engaged in those receive pad 120 and this pattern metal strengthening courses 140, and has good ball thrust performance.
For the ease of understanding the patterning generation type of above-mentioned pattern metal strengthening course 140, the manufacture method of above-mentioned sphere grid array base plate for packaging 100 of the present invention will describe in detail as after, see also shown in Fig. 2 A, one substrate body 110 at first is provided, this substrate body 110 has a surface 111, on this surface 111 and be formed with a plurality of receive the pad 120; See also again shown in Fig. 2 B, form a welding resisting layer 130 on the surface 111 of this substrate body 110 in modes such as printings, this welding resisting layer 130 has a plurality of openings 131, to appear the corresponding pad 120 of receiving, and make each pad 120 of receiving have one to appear surface 121 that and each opening 131 has at least one sidewall 132; For another example shown in Fig. 2 C, form a plurality of photonasty coverings 160 on those receive pad 120, those coverings 160 be partly cover those pads 120 of receiving appear surface 121, and the sidewall 132 that appears the opening of this welding resisting layer 130 appears the periphery on surface 121 with this, those coverings 160 can a dry film (dry film) be formed on the surface 111 of this substrate body 110 and through exposure, develop, clean form, preferably, the height of those coverings 160 is higher than the upper surface 133 of this welding resisting layer 130; See also again shown in Fig. 2 D, utilize metallide, modes such as electroless plating (electroless plating) or sputter form above-mentioned pattern metal strengthening course 140, this pattern metal strengthening course 140 is arranged at those pads 120 of receiving and is not appeared surperficial 121 by what those coverings 160 covered, so this pattern metal strengthening course 140 is along the sidewall 132 of the opening 131 of this welding resisting layer 130 and patterning is formed at those pads 120 of receiving, because the height of those coverings 160 is higher than the height of this welding resisting layer 130, help those pattern metal strengthening courses 140 and be raised in this welding resisting layer 130 slightly, preferably, those pattern metal strengthening courses 140 do not cover this covering 160, but cover the sidewall 132 of the opening 131 of this welding resisting layer 130 fully, those pattern metal strengthening course 140 its materials can be selected from copper, nickel and alloy group thereof, can be material identical or inequality with those pads 120 of receiving, but the fusing point of those pattern metal strengthening courses 140 should be high thereon in conjunction with the fusing point of soldered ball, avoiding those pattern metal strengthening courses 140 in reflow process, to produce fusion, and lose the structural strengthening effect of those pattern metal strengthening courses 140 with soldered ball; Please consult shown in Fig. 2 E again, remove those coverings 160, appear surface 121 with what manifest not those pads 120 of receiving of being covered by those pattern metal strengthening courses 140, to form nonplanar face of receiving, preferably, as shown in Figure 1, form a nickel/gold layer 150 with plating mode, to cover those receive pad 120 and those pattern metal strengthening courses 140, make those pads 120 of receiving not oxidized and combine with soldered ball easily in encapsulation process.
Please consult shown in Figure 4 again, the ball grid array encapsulation construction 200 that utilizes above-mentioned sphere grid array base plate for packaging 100 to be constituted includes above-mentioned sphere grid array base plate for packaging 100, one chip 210 and a plurality of soldered ball 220, this chip 210 is fixedly arranged on this sphere grid array base plate for packaging 100 and utilizes and is electrically connected to this sphere grid array base plate for packaging 100 as bonding wire 211 electrical connection devices such as grade, preferably, form a packaging body 230 on this sphere grid array base plate for packaging 100, to seal this chip 210 and bonding wire 211, those soldered balls 220 are planted and are connected to those receive pad 120 and those pattern metal strengthening courses 140, increase those soldered balls 220 with those pattern metal strengthening courses 140 and plant the bonding area that is connected to this sphere grid array base plate for packaging 100, and those pattern metal strengthening courses 140 are to be shaped along the sidewall 132 of the opening 131 of this welding resisting layer 130, so can reduce the influence of this welding resisting layer 130 to those soldered balls 220.
Protection scope of the present invention is as the criterion when looking the content that claims define, and anyly knows this skill person, and any variation and the modification done without departing from the spirit and scope of the present invention all belong to protection scope of the present invention.
Claims (26)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100745839A CN100373596C (en) | 2004-09-07 | 2004-09-07 | Ball grid array package substrate, manufacturing method thereof and ball grid array package structure thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100745839A CN100373596C (en) | 2004-09-07 | 2004-09-07 | Ball grid array package substrate, manufacturing method thereof and ball grid array package structure thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1747156A CN1747156A (en) | 2006-03-15 |
| CN100373596C true CN100373596C (en) | 2008-03-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100745839A Expired - Lifetime CN100373596C (en) | 2004-09-07 | 2004-09-07 | Ball grid array package substrate, manufacturing method thereof and ball grid array package structure thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100373596C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI442530B (en) * | 2009-10-14 | 2014-06-21 | Advanced Semiconductor Eng | Package carrier, package structure and process of fabricating package carrier |
| TWI402955B (en) * | 2010-01-13 | 2013-07-21 | Via Tech Inc | Chip package structure and package substrate |
| US8508024B2 (en) | 2010-01-13 | 2013-08-13 | Via Technologies, Inc | Chip package structure and package substrate |
| CN104576405B (en) * | 2014-12-16 | 2017-11-07 | 通富微电子股份有限公司 | Single layer substrate packaging technology |
| CN104934399A (en) * | 2015-06-23 | 2015-09-23 | 日月光封装测试(上海)有限公司 | Semiconductor substrate and method for fabricating same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1466206A (en) * | 2002-06-28 | 2004-01-07 | ��Ʒ���ܹ�ҵ�ɷ�����˾ | Ball Grid Array Semiconductor Package |
| US6762503B2 (en) * | 2002-08-29 | 2004-07-13 | Micron Technology, Inc. | Innovative solder ball pad structure to ease design rule, methods of fabricating same and substrates, electronic device assemblies and systems employing same |
-
2004
- 2004-09-07 CN CNB2004100745839A patent/CN100373596C/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1466206A (en) * | 2002-06-28 | 2004-01-07 | ��Ʒ���ܹ�ҵ�ɷ�����˾ | Ball Grid Array Semiconductor Package |
| US6762503B2 (en) * | 2002-08-29 | 2004-07-13 | Micron Technology, Inc. | Innovative solder ball pad structure to ease design rule, methods of fabricating same and substrates, electronic device assemblies and systems employing same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1747156A (en) | 2006-03-15 |
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Granted publication date: 20080305 |