CN100362651C - 发动机驱动发电机的整流器组件中二极管组件的制造方法 - Google Patents
发动机驱动发电机的整流器组件中二极管组件的制造方法 Download PDFInfo
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Abstract
本发明公开一种制造用于发动机驱动的发电机的整流器组件中的二极管组件的方法。二极管组件具有二极管杯,半导体二极管晶片和安装于其上的二极管引线。二极管组件用回流软焊,这样,在氩/氢气氛中,半导体二极管晶片和二极管引线回流软焊在二极管杯内。在本发明的另一方面,一具有夹持二极管引线的、可移去的引线夹具的引线装料器定位在二极管器皿的上方,这样,二极管引线与相应的二极管杯对齐。引线夹具从引线装料器滑开,以使二极管引线落入也具有位于其中的半导体二极管晶片的中心二极管杯内。二极管器皿插入一真空炉内,以进行回流软焊。
Description
相关申请
本申请基于先前提出的临时申请系列号60/228,381,其提出于2000年8月28日。
技术领域
本发明涉及用于发动机驱动的发电机(诸如汽车交流发电机)的整流器组件领域,更具体来说,本发明涉及用于这种整流器组件的二极管组件的制造领域。
背景技术
压配合的二极管组件通常用于车辆持久的热循环最小部分的耐用二极管组件,诸如在共同授予的美国专利No.5,991,184中所示的那种类型,这里援引该公开的全部内容以供参考。这些压配合二极管组件形成为多个二极管零件的一个部件,并压配合在整流器组件的诸导电冷却板内。一直立的二极管引线从二极管杯向上延伸,二极管杯通常压配合和互连不同的发电机,例如,交流发电机部件。压配合的二极管组件包括一下部杯、一用作二极管或整流组件的硅或其它半导体二极管晶片、一直立的二极管引线,以及形成在暴露的二极管引线和杯的上部区域上方的环氧树脂。使用这种二极管组件的整流器组件类型,在全美国和全世界均有生产,一实例示于’184专利中。一个诸如六个压配合的二极管组件的多元部件被制造用于诸如’184专利公开的各整流器中,不过,二极管组件的数量可根据整流器的类型和其最终用途而定。
用于生产这种压配合和类似的整流器用的二极管组件的制造技术具有关键的重要性,而采用的技术在短寿命和较长寿命的整流器之间形成差异。因此,关键性重要的是,二极管组件的制造过程必须细心地监控,以求获得最佳的二极管生产和整流器效果。
某些现有技术的参考文献介绍一二极管基片在金属基的腔体内软焊,诸如授予Wasmer等人(D1)的美国专利No.5,005,069所援引的技术。该专利没有公开在氩/氢气氛中的回流软焊,其中,预成形软焊料重新熔化而扩散软焊料。标准的软焊工艺显然不使用预成形软焊料。日本专利摘要,1996卷,No.8,JP08107272(D2)公开一种安装在丝材基底的导线上的膜载体带的电极,它用通常的标准而无预成形软焊料进行软焊。焊接点用氢气混合氩气馈给,以减小氧化膜。没有提出用预成形软焊料,将半导体二极管晶片和二极管引线回流软焊在二极管杯内。没有指明应提供怎样的气体混合物。D2指出重点放在氢(一种反应性气体)上并采用较大的含量,这样,在标准软焊过程中,有助于加热和软焊料的流动。援引的授予Lofdahl(D3)的美国专利No.4,074,420公开加热器皿和用来组装电子部件引线的套筒保持块。它没有公开或提出,采用预成形软焊料在氩/氢气氛中,将半导体二极管晶片和二极管引线回流软焊在二极管杯内,其中,氩在数量上占支配地位,以足以实现回流软焊。欧洲专利申请No.0539725目标在于用于电子器件的易熔锡软焊料。没有任何地方提出在氩/氢气氛中,将半导体二极管晶片和二极管引线回流软焊在二极管杯内。
发明内容
因此,本发明的目的在于提供一种用于二极管组件生产的改进的方法和工艺,这种二极管组件用于诸如汽车用途的发动机驱动的发电机中的整流器。
为了实现上述发明目的,根据本发明的一个方面,提供了一种制造用于发动机驱动的发电机的整流器中的二极管组件的方法,其中,该组件包括一个二极管杯,半导体二极管晶片和装配在其上的二极管引线,该方法包括下列步骤:在氩/氢气氛中,将半导体二级管晶片和二级管引线在二级管杯内回流软焊,其中氩的含量大于氢的含量,并且该回流软焊是在高达400℃的气氛下进行的。
根据本发明的另一个方面,提供了一种制造用于发动机驱动的发电机的整流器中的二极管组件的方法,该方法包括下列步骤:在氩/氢气氛中,将半导体二级管晶片和二级管引线在二级管杯内进行软焊,其中氩的含量大于氢的含量,并且该软焊是在高达400℃的气氛下进行的。
本发明具有优点,并提供具有优点且生产较少氧化的二极管组件的二极管组件制造工艺,且其制造环境能使更多的关键技术条件得到满足。
附图说明
借助于附图,从下面对本发明的详细描述,本发明的其它的目的、特征和优点将会变得显而易见,其中:
图1A是本发明二极管组件的立体图。
图1B示出图1A的二极管组件极性方向。
图1C图1A所示的二极管组件的分立的立体图。
图2是图1A所示的二极管组件的截面图。
图3是图1A所示的二极管组件的放大的立体图。
图4是装入如图1C所示的二极管杯内的、直立的二极管引线的放大立体图。
图5示出一硅二极管晶片和放置在两侧的两个预成形软焊料的立体图,它们构造成圆形,并用于本发明的工艺中。
图6示出部分分解的二极管组件,其晶片连接在二极管杯内的圆形底板上,其中,直立的二极管引线已移去,以展示硅二极管晶片顶上的软焊料。
图7是部分组装的二极管组件的另一立体图,显示软焊到硅二极管晶片上的直立的二极管引线。
图8是一真空炉的立体图,真空炉接纳含有未完成二极管组件的二极管器皿,用来实现回流软焊。
图9是一二极管器皿的立体图,该器皿具有容纳在下器皿件内的二极管杯,并显示覆盖下器皿件的上板,一位于二极管器皿附近的引线装料器,还显示从引线装料器向上延伸的二极管引线,这样,当引线夹具移走时,二极管引线跌落通过上板中的孔而进入二极管杯内。
图10是图9所示的二极管器皿的另一视图。
图11是无夹持上板的下器皿件的另一视图。
图12是引线装料器和引线夹具的分立的立体图,引线夹具在引线装料器的导向槽内可滑动地移去。
图13是翻转的夹持上板的立体图,其中,二极管杯放置在上板中,显示二极管杯的底表面。
图14是一二极管器皿小部分的截面图,显示容纳在下器皿中的二极管夹持孔内的二极管杯,以及位于下器皿件上方并夹持其中的二极管杯的夹持上板,上述二极管杯是称之为C形杯的第一类型的二极管杯。
图15是类似于图14的视图,但显示对于B形杯的尺寸上的小差异。
图16是下器皿件的平面图。
图17是图16所示的二极管夹持孔的放大视图。
图18是沿图17的线18-18截取的截面图。
图19是图16所示的下器皿件的侧立面图。
图20是用于图15所示的B形杯的夹持上板的局部俯视平面图,显示二极管引线可通过其间落入二极管杯内的诸孔。
图21是图20一部分的略微放大的视图。
图22是沿图21的线22-22截取的截面图。
图23-25是类似于图20-22的视图,但示出C形杯的使用。
图26-28是类似于图20-22和23-24的视图,但示出诸如用于DR4000整流器组件的二极管组件的结构。
具体实施方式
本发明现将在下文中参照附图作更为完全的描述,其中,将展示本发明的优选实施例。然而,本发明可以不同的形式实施,因此,不应认作为限制于本文所列的诸实施例。相反,提供这些实施例以使本公开的内容彻底和完整,并将本发明的范围充分地传达给本技术领域的技术人员。全文中相同的标号表示相同的元件。
本发明对于制造压配合二极管组件和其它二极管组件具有诸多优点,这种二极管组件用于如所援引供参考的’184专利所示的整流器组件。当然,根据本发明可加工用于不同的整流器和其它用途的其它类型的二极管组件。下列描述不局限于所示类型的整流器和二极管组件。
图1C示出可根据本发明加工的一压配合二极管组件30的分立的立体图。如图所示,压配合二极管组件包括一具有圆形构造的下二极管杯32。二极管杯32的内部包括一突起的环形晶片座32a。二极管杯的下边缘部分34具有锯齿形突起36(图1A,1C,2,3,6和7),以按高精度公差允许整流器冷却板的压配合。一二极管杯通常形成为镀镍的铜质杯。
显示于38的硅半导体二极管晶片,利用如图8所示的真空炉,与预成形软焊料40,42回流软焊成二极管杯。尽管图1C示出一六边形半导体二极管晶片38,但图5所示的正方形结构,任何类型的结构都是可能的,正如本技术领域的技术人员所熟知。一直立的二极管引线44座在预成形软焊料42上,且一环氧树脂层46用作为一密封剂。二极管引线44包括一杆44a和圆形底座44b。半导体二极管晶片38的极性在制造过程中被确认,这样,在圆形底座44b处的二极管杯的平底面对应负极,而杆44a对应正极。
如图2所示,二极管组件30具有一直径约为其高度尺寸的二极管杯。这个尺寸可以变化。直立的二极管引线44是回流软焊而成。在本发明的一方面,该直立的二极管引线44可以是镀镍的铜质引线。
在利用预成形软焊料40,42,回流软焊直立的二极管引线和硅半导体二极管晶片之后,测试如图7所示的部分组装的二极管组件。测试之后,然后,将如图3所示的环氧树脂涂层或密封剂46放置到杯内作为一密封。在环氧树脂密封之前,也可塞入其它的阻挡物或密封剂。环氧树脂密封剂46在周边不应超过二极管杯壁的顶,而应有覆盖二极管引线底座44b的最小量。除了在如图7所示的二极管引线/环氧树脂交界面上的环氧树脂的毛细现象之外,在暴露的二极管引线杆44a上不应有环氧树脂。
图5详细示出两个圆形构造的预成形软焊料40,42,使硅半导体二极管晶片38处于中间,并示出硅半导体二极管晶片和预成形软焊料的相对尺寸。图6示出软焊后一局部组装的压配合二极管组件30,其中,直立的二极管引线已被强行移去,以将软焊回流粘结显示为断口在硅半导体二极管晶片的顶上。
图8显示一种可用于本发明的工艺中的控制气氛的真空炉50的实例。可供采用的真空炉类型的实例是PF-2400型真空炉,它由加利福尼亚州的ScientificSealing Technology of Downey制造。也可使用其它类型的真空炉50。
根据本发明,使用氩/氢混合气体可以更好地软焊,而在本发明的一方面,可以更好地回流软焊。氢气帮助除去氧化层并有助于表面的清洁。在有一时期,氮被认为是主要的,而氢可不需要。使用本发明,业已发现氩/氢气氛具有其优点。在本发明的一方面,80%的氩混合料对20%的氢混合料证明是有利的。用于本发明的软焊料可以是铅-锡-铟软焊料,且在控制的炉内气氛中十分有利。
现对用于本发明的一种类型的真空炉(如图8所示)作一基本的描述。尽管根据本技术领域的技术人员在本发明中所要实践的内容,可以修改许多种类型的真空炉,但下列真空炉的描述是一般性描述,其目的仅在于理解起见,且针对上面表明的PF-2400型真空炉。
真空炉可包括一目的用于低温(上限应用约为400℃或低一些)的真空单元。业已证实回流软焊在此温度是有利的。加热系统可采用三块固定长度的石墨台板52的低电压回路,石墨台板排列成大致平行且隔开约0.25英寸,并逐个由控制器53控制。图8示出其中两个石墨板52。一采用逐相激发的可控硅整流器(SCR)单元的、具有AC输出的三相系统,可为实践本发明提供所要求的必要的加热器的电功率。一个二级真空泵系统将空气从真空炉中抽出,下降到约10毫乇。使用一加压系统并对其编程,以在不同的输入气体中进行选择,从而在真空和高达每平方英寸60磅的压力之间实现操作。
温度控制允许高达约1℃的变化增量,且大约直到400℃。台板52约8英寸宽和约30英寸有效加热长度,从而形成约725平方英寸的复合加热面积。
在操作中,将装载部分组装好的二极管组件的二极管器皿装入真空炉并放置在台板上。工艺参数可由微处理器根据储存的程序进行控制,程序允许对均匀升温、保温和冷却的气氛控制给定要求的温度和压力。这些气氛控制功能可在一循环中的任何点开始,也可根据时间或已达到的任何气氛水平来加以控制。
如图所示,真空炉是一长方形结构,它包括一内部的、长方形构造的持有台板52的加工室54,并采用一液压致动的盖56。当处于如图8所示的全打开位置时,操作者可直接看到所有在加工的二极管器皿。在真空炉的一侧可接合一端线的传送装置,以提高加工控制和自动化。一操作者控制台可位于真空炉的另一侧,用来控制自动化操作。
真空炉可包括气体冷却耙58,例如,如图8所示的装在盖56上的冷却靶。相移角激发的可控硅整流器可控制石墨台板。真空炉中的气氛可用不同的技术加以控制,例如,数字控制方法。阀门的控制可用来再充气,加压和冷却。利用一比一比例的先导控制调节器中的选择阀,一数控调节器可向一分配集管馈给比例压力信号。
加工室可由焊接的不锈钢或其它的类似的材料制成,包括容纳水冷却用的内外壁。当然,盖子在关闭时是不透气密封。在一构造中,可设置上下气冷耙,以直接在任何加工的二极管器皿上和石墨台板下形成一湍流。用于本发明的加工气体和任何空气可从不同的气体中选择,例如,采用本技术领域的技术人员所要求的程序控制的流量,从三种气体输入中选择。系统可将二极管快速地冷却到要求的处理温度,以便其后的检查。
如前面所指出的,二极管组件在放置在真空炉50的加工室54内的台板52上的二极管器皿中进行加工。如图9所示,二极管组件30放置在二极管器皿100内,如形成为一下器皿件102(图16-19)并包含在保持孔104中。一上夹持板106位于下器皿件102的上方,并将二极管杯32夹持在二极管保持孔104内。上夹持板106包括二极管可通过其延伸的孔108,而二极管引线连同第一圆形座可落下。
当多个二极管杯32放置在下器皿件102中的二极管保持孔104中时(例如,如图9中二极管器皿所示的二极管杯),二极管引线被放置在如图9和12所示的一引线装料器120中。尽管本发明一方面的二极管器皿形成为可容纳任何数量的二极管杯,但这里仅示出172个二极管杯。如图12所示,引线装料器120包括具有小的二极管杆孔124的二极管引线板122,二极管杆在上述孔124中延伸通过。为了插入二极管引线44,引线板122倒置而插入二极管引线,第一杆。
引线装料器的二极管板122包括如图12所示的端支承,它们具有槽128,一引线夹具130通过槽可滑动地插入和移出。当二极管引线放置在二极管杆44a通过孔124延伸的地方时,引线夹具130滑动地放置在槽128内,并以这样的方式保持二极管座44b,即,当引线装料器倒置时,二极管杆不会从孔中落出。
在半导体二极管晶片和预成形软焊料放置在二极管杯内之后,如图9所示的引线装料器120,在具有上夹持板106的二极管器皿100的上方插入就位,这样,各个金加工过的孔互相对齐。二极管引线位于孔108上方的位置,二极管引线通过孔108可在上夹持板上延伸。引线夹具130可滑动地移出,而二极管引线落入二极管杯中。然后,引线装料器120移离二极管器皿,如图10所示的二极管器皿可放置在真空炉中以进行回流软焊。图13示出二极管器皿的倒置部分,其中,下器皿件已移去,该图示出二极管杯32保持在上夹持板106内。
图14-15示出互相非常相似的两种类型的二极管器皿100,但允许不同类型的二极管组件在其中进行软焊。如图15所示,对于稍微比C形杯大一些的B形杯,图15允许较大尺寸的二极管组件。图14和15以局部截面图方式示出其中容纳二极管杯的下器皿件102,以及位于其上方的上夹持板。
图20-22以局部平面图(图20)和局部截面图(图22)的方式详细地显示上夹持板106,如图21所示,表示B形杯的一部分,而图23-25显示C形杯的一部分。
图26-28示出类似的视图,但用于已知类型制造的二极管组件,这种二极管组件用于由Transpo Electronic Inc.销售的DR4000型整流器。
在真空炉中回流软焊(其按如上所述加以控制)之后,二极管组件可传送到一铝质二极管器皿200中,如图11所示,其设计类似于石墨二极管器皿,但由于它不必抵御热量,所以它不用石墨材料制成。例如,石墨二极管器皿100可以倒置,且如图13所示,下器皿件102从上夹持板106移去。由铝质二极管器皿的铝制成的上夹持板106放置在器皿之上,然后,将其再次倒置。石墨上夹持板移去,而铝夹持板位于其上,以形成一完全的铝质二极管器皿。这使不同的二极管器皿快速而容易地互换。
在二极管组件位于铝质二极管器皿内的同时,一独立的测试组件可放置在铝质二极管器皿上,各个二极管组件可进行测试。测试之后,加上环氧树脂密封剂。一旦封完环氧树脂密封剂之后,再次测试二极管组件,其后,它被移走,用于进一步制造成品的整流器组件。
本技术领域的技术人员从上述的描述和附图所提供的传授内容中得到好处后,将会想到许多修改和本发明的其它实施例。因此,应该理解的是,本发明不局限于所公开的具体实施例,而且诸改型和实施例必须包括在附后的权利要求书的范围内。
Claims (14)
1.一种制造用于发动机驱动的发电机的整流器中的二极管组件(30)的方法,其中,该组件包括一个二极管杯(32),半导体二极管晶片(38)和装配在其上的二极管引线(44),该方法包括下列步骤:
在氩/氢气氛中,将半导体二级管晶片和二级管引线在二级管杯内回流软焊,其中氩的含量大于氢的含量,并且该回流软焊是在高达400℃的气氛下进行的。
2.如权利要求1所述的方法,其特征在于,还包括下列步骤:在80%的氩和20%的氢的氩/氢气氛中进行回流软焊。
3.如权利要求1所述的方法,其特征在于,还包括下列步骤:在有助于将半导体二极管晶片(38),二极管杯(32)和二极管引线(44)压合在一起的压力下进行回流软焊。
4.如权利要求1所述的方法,其特征在于,还包括下列步骤:在高达每平方英寸60磅的压力下进行回流软焊。
5.如权利要求1所述的方法,其特征在于,还包括下列步骤:用铅-锡-铟软焊料进行回流软焊。
6.如权利要求1所述的方法,其特征在于,在回流软焊步骤之后,还包括下列步骤:用密封剂(46)密封二极管杯(32)、半导体二极管晶片(38)和二极管引线(44)。
7.如权利要求7所述的方法,其特征在于,密封步骤包括用环氧树脂密封的步骤。
8.一种制造用于发动机驱动的发电机的整流器中的二极管组件(30)的方法,该方法包括下列步骤:
在氩/氢气氛中,将半导体二级管晶片和二级管引线在二级管杯内进行软焊,其中氩的含量大于氢的含量,并且该软焊是在高达400℃的气氛下进行的。
9.如权利要求8所述的方法,其特征在于,还包括下列步骤:在80%的氩和20%的氢的氩/氢气氛中进行回流软焊。
10.如权利要求8所述的方法,其特征在于,还包括下列步骤:在有助于将半导体二极管晶片(38),中心二极管杯压合在一起的压力下进行回流软焊。
11.如权利要求8所述的方法,其特征在于,还包括下列步骤:在高达每平方英寸60磅的压力下进行回流软焊。
12.如权利要求8所述的方法,其特征在于,还包括下列步骤:用铅-锡-铟软焊料进行回流软焊。
13.如权利要求8所述的方法,其特征在于,在回流软焊步骤之后,该方法包括用密封剂(46)密封二极管杯(32),半导体二极管晶片(38)和二极管引线(44)的步骤。
14.如权利要求13所述的方法,其特征在于,密封步骤包括用环氧树脂密封的步骤。
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- 2001-08-14 CN CNB018148379A patent/CN100362651C/zh not_active Expired - Fee Related
- 2001-08-14 WO PCT/US2001/025428 patent/WO2002019422A2/en active Application Filing
- 2001-08-14 AU AU2001284895A patent/AU2001284895A1/en not_active Abandoned
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2003
- 2003-07-16 US US10/620,552 patent/US7060533B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
CN1449580A (zh) | 2003-10-15 |
US6642078B2 (en) | 2003-11-04 |
WO2002019422A2 (en) | 2002-03-07 |
AU2001284895A1 (en) | 2002-03-13 |
US7060533B2 (en) | 2006-06-13 |
US20040014256A1 (en) | 2004-01-22 |
US20020068411A1 (en) | 2002-06-06 |
WO2002019422A3 (en) | 2002-08-29 |
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