CN100341699C - Single petrifaction fluid jetting device and manufacturing method thereof - Google Patents

Single petrifaction fluid jetting device and manufacturing method thereof Download PDF

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CN100341699C
CN100341699C CNB2004100041563A CN200410004156A CN100341699C CN 100341699 C CN100341699 C CN 100341699C CN B2004100041563 A CNB2004100041563 A CN B2004100041563A CN 200410004156 A CN200410004156 A CN 200410004156A CN 100341699 C CN100341699 C CN 100341699C
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fluid
structure sheaf
cavity
fluid cavity
manifold
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CN1654212A (en
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周忠诚
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BenQ Corp
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BenQ Corp
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Abstract

The present invention discloses a single petrifaction liquid jet device which comprises a base, a structure layer formed on the base, a branch pipe arranged in the base to supply liquid, a plurality of first liquid cavities which are arranged between the base and the structure layer to hold liquid to be jetted and are directly communicated with the branch pipe, at least one second liquid cavity which is arranged between the base and the structure layer to hold the liquid to be jetted and is not directly communicated with the branch pipe, a flow channel arranged between the base and the structure layer to transmit the liquid to the second liquid cavity, and a plurality of jet holes communicated with the first liquid cavities and the second liquid cavity by passing through the structure layer to jet the liquid. The present invention also discloses a method for making the single petrifaction liquid jet device.

Description

Single petrochemical fluid jet device and manufacture method thereof
Technical field
The present invention relates to a kind of semiconductor device, relate in particular to a kind of single petrochemical fluid jet device (monolithic fluid eject device) and manufacture method thereof.
Background technology
At present, fluid ejection technique has been widely used in various sciemtifec and technical spheres, for example printing machine ink gun, fuel injection equipment (FIE) or sci-tech products such as physiological medical science system such as drug injection machine.
Existing fluid ejection apparatus can be illustrated referring to Figure 1A, Figure 1B and Fig. 1 C.Figure 1A, Figure 1B and Fig. 1 C show United States Patent (USP) 6,267, No. 468 disclosed fluid ejection apparatus with a plurality of manifolds (manifolds), wherein Figure 1A is the top view of this device, Figure 1B is the following view of this device, and Fig. 1 C is the perspective view of this device.
This fluid ejection apparatus is made of a silicon base 11, wherein has three manifolds 71~73 and a plurality of runner (channel) 29, in order to carry fluid; Fluid cavity (chamber) 19 is located at the both sides of manifold 71~73, in order to hold fluid; A plurality of spray orifices (nozzle) 21 are located at the surface of fluid cavity 19, for the fluid ejection.
Branch manifold in the existing fluid ejection apparatus, the corresponding two current drainage body cavitys 19 of an one manifold by the increase of fluid cavity 19 numbers, can improve the density of ink-jet.Because be subjected to the restriction of classical production process, the number of manifold must increase with the increase of fluid cavity 19 numbers, this can not satisfy the requirement of simplifying working process on the industry or reducing cost.
The method of traditional manufacturing fluid ejection apparatus is as follows, sees also Fig. 2 A and Fig. 2 B.Shown in Fig. 2 A, provide substrate 10, for example silicon base.In substrate 10, form (patterning) sacrifice layer 20 of composition, sacrifice layer 20 is made of silica material, then, forms the structure sheaf 30 of composition in substrate 10, this structure sheaf covers the sacrifice layer 20 of composition, and structure sheaf 30 can be the silicon nitride layer that is formed by chemical vapour deposition technique (CVD).
Then, form the resistive layer 40 of composition on structure sheaf 30, with as actuator (for example, heater), resistive layer 40 is by HfB 2, TaAl, TaN or TiN constitute.Then, form the separation layer 50 of composition, covered structure layer 30 and resistive layer 40, and after forming heater contact hole 45, on structure sheaf 30, form the conductive layer 60 of composition, and insert heater contact hole 45, to form signal transmission line road 62.At last, in substrate 10, form protective layer 70, cover separation layer 50 and conductive layer 60, and in protective layer 70, form signal transmission line road contact hole 75, conductive layer 60 is exposed, in order to follow-up packaging operation.
Next see also Fig. 2 B; with wet etch method, for example with the back side of potassium hydroxide (KOH) solution etching substrate 10; to form fluid passage 80 and opening 100; and after exposing sacrifice layer 20; remove sacrifice layer 20 with the etching of hydrofluoric acid (HF) solution again, reuse KOH to substrate etching finishing fluid cavity 90, last; etch protection layer 70, separation layer 50 and structure sheaf 30 in regular turn are to form the spray orifice 95 that is communicated with fluid cavity 90.So far, promptly finish the manufacture process of single petrochemical fluid jet device.
Learn by said process, when making fluid cavity 90, must cooperate the back side of etching substrate 10 could obtain complete fluid ejection apparatus to form fluid passage 80.Therefore, if wish to make the fluid ejection apparatus that comprises many current drainages body cavity 90, certainly will repeat the multiple tracks etching step can finish, and because the fluid passage 80 after the etching presents low wide and up narrow shape, cause too much fluid passage 80 will occupy the utilized area of wafer significantly, thereby reduced the service efficiency of wafer.
Summary of the invention
Given this, the purpose of this invention is to provide a kind of single petrochemical fluid jet device, it can reach the effect that high density is sprayed or ink dot changes by means of corresponding to many current drainages body cavity single manifold being set.
To achieve these goals, the invention provides a kind of single petrochemical fluid jet device, it comprises: a substrate; One is formed at suprabasil structure sheaf; One is arranged in the substrate to supply with the manifold of fluid; Be arranged at a plurality of first-class body cavity between substrate and the structure sheaf, holding fluid to be sprayed, and described first-class body cavity directly is communicated with manifold; Be arranged at least one second fluid cavity between substrate and the structure sheaf, holding fluid to be sprayed, and second fluid cavity directly is not communicated with manifold; Be arranged at the runner between this substrate and the structure sheaf, with accommodating fluid to the second fluid cavity; And pass structure sheaf and be communicated with the described first-class body cavity and second fluid cavity to spray a plurality of spray orifices of fluid.
According to fluid ejection apparatus of the present invention, can under the condition that does not increase the manifold number, provide fluid cavity, to improve the fluid injection density than the more row's numbers of prototype, and the arrangement that misplaces each other of described fluid cavity, thereby make fluid ejection apparatus easily reach the effect of quicker injection fluid in the unit interval.
The present invention also provides a kind of manufacture method of single petrochemical fluid jet device, and it comprises the following steps: to provide a substrate; Form the sacrifice layer of a composition in substrate, this sacrifice layer is as the predetermined zone that forms first-class road and a plurality of fluid cavitys; Form the structure sheaf of a composition in substrate, this structure sheaf covers the sacrifice layer of composition; Form one and pass the manifold of substrate, and expose the sacrifice layer of composition; Remove described sacrifice layer, to finish the manufacturing of described runner and fluid cavity, wherein, described fluid cavity comprises a plurality of first-class body cavitys and at least one second fluid cavity, and described first-class body cavity directly is communicated with manifold, and second fluid cavity is communicated with manifold by runner; And the etch structures layer, to form the spray orifice that a plurality of and described fluid cavity is communicated with.
Description of drawings
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred implementation cited below particularly also is described in detail in conjunction with the accompanying drawings.
Figure 1A to 1C is a United States Patent (USP) the 6th, 267, the schematic diagram of method of making fluid jet equipments in No. 468;
Fig. 2 A and Fig. 2 B are the generalized section of traditional method of making fluid jet equipments;
Fig. 3 A, 3B and Fig. 4 are the schematic diagram of the single petrochemical fluid jet device manufacture method of first embodiment of the invention;
Fig. 5 A, 5B and Fig. 6 are the schematic diagram of the single petrochemical fluid jet device manufacture method of second embodiment of the invention;
Fig. 7 A, 7B and Fig. 8 are the schematic diagram of the single petrochemical fluid jet device manufacture method of third embodiment of the invention.
Description of reference numerals
10,11 substrates
19,90 fluid cavitys
20 sacrifice layers
21,95 spray orifices
29 runners
30 structure sheafs
40 resistive layers
45 heater contact holes
50 separation layers
60 conductive layers
62 signal transmission line roads
70 protective layers
71~73 manifolds
75 signal transmission line road contact holes
80 fluid passages
100 openings
D9, d10, d11 fluid cavity width
300,500,700 substrates
310,510,710 sacrifice layers
320,520,720 structure sheafs
330,530,730 resistive layers
340,540,740 separation layers
350,550,750 heater contact holes
360,560,760 conductive layers
370,570,770 protective layers
380,580,780 signal transmission line road contact holes;
385,585,785 spray orifices
390,590,790 fluid passages
395,595,795 openings
The θ angle
400,600,800 manifolds
410,610,810 runners
420,430,440,450,620,630,640,650,820,830,840,850 fluid cavitys.
The specific embodiment
Embodiment one
The architectural feature of the fluid ejection apparatus of present embodiment is: be interconnected between fluid cavity 420,430,440,450, runner 410 and manifold 400 threes; Fluid cavity 420 and 430,440 and 450 is dislocation arrangement; And fluid cavity 420 and 440,430 and 450 is aligned identical.
The structure of the single petrochemical fluid jet device of present embodiment now is described referring to Fig. 3 B (generalized section) and Fig. 4 (schematic top plan view), wherein, the profile of Fig. 3 B for dissecing along 3b-3b line among Fig. 4.This fluid ejection apparatus comprises substrate 300, fluid passage 390, manifold 400, four current drainage body cavitys 420,430,440,450; runner 410, structure sheaf 320, resistive layer 330, separation layer 340; conductive layer 360, protective layer 370, a plurality of signal transmission lines road contact hole 380, and a plurality of spray orifice 385.
Fluid passage 390 is formed in the substrate 300 with manifold 400, and wherein, manifold 400 is the narrow opening section of fluid passage 390.Four current drainage body cavitys 420,430,440,450 and runner 410 are formed between substrate 300 and the structure sheaf 320, and wherein fluid cavity 420,430,440,450 is as follows with being provided with of runner 410: fluid cavity 430,440 is communicated with manifold 400; Fluid cavity 420,450 is communicated with runner 410, because runner 410 is a circular passage around fluid cavity 420,430,440,450 outsides, manifold 400 also is communicated with runner 410.
According to above-mentioned set-up mode, formed the structure that fluid cavity 420,430,440,450 and runner 410 and manifold 400 threes are connected in series connection mutually.Wherein fluid cavity 430,440 is dislocation arrangement, and fluid cavity 420 and 440,430 and 450 is arranged identical.
Structure sheaf 320 covers on substrate 300 and the fluid cavity 420,430,440,450.Resistive layer 330 is arranged on the structure sheaf 320, and is positioned at the spray orifice both sides, and it represents for example heater of a plurality of ejection actuators, fluid is driven via jet actuator after, by spray orifice 385 ejections.Separation layer 340 covers on substrate 300, structure sheaf 320 and the resistive layer 330, but exposed portions serve resistive layer 330, to form the heater contact hole.Conductive layer 360 covers on the separation layer 340, and inserts the heater contact hole, as the signal transmission line road.
Protective layer 370 covers on separation layer 340 and the conductive layer 360, and exposed portions serve conductive layer 360, forms a plurality of signal transmission lines road contact hole 380, in order to follow-up packaging operation.In addition, a plurality of spray orifices 385 run through in each layer that is formed at protective layer 370, separation layer 340 and structure sheaf 320, and are communicated with fluid cavity 420,430,440,450.
The architectural feature of the fluid ejection apparatus of present embodiment is the connection design between fluid cavity 420,430,440,450 and runner 410 and manifold 400 threes, this kind particular topology, can improve in the prior art when making a plurality of fluid cavity, the complicated operation of the necessary corresponding manifold of one current drainage body cavity, only just can supply the fluid to each fluid cavity 420,430,440,450 and manipulate, and reach ink-jet effect same as the prior art by means of single manifold 400.In addition, utilize the dislocation of fluid cavity 430,440 to arrange, can improve the injection density of device significantly.
Then, see also Fig. 3 A, Fig. 3 B and Fig. 4, the manufacture process of the single petrochemical fluid jet device of one embodiment of the present invention is described.At first, as shown in Figure 3A, provide substrate 300, silicon base for example, the thickness of substrate 300 is substantially between 625~675 microns.Then, on first 3001 of substrate 300, form the sacrifice layer 310 of composition, sacrifice layer 310 is made of boron-phosphorosilicate glass (BPSG), phosphorosilicate glass (PSG) or silica material, preferably constitutes with phosphorosilicate glass, and the thickness of sacrifice layer 310 is substantially between 1~2 micron.
As shown in Figure 4, the sacrifice layer of above-mentioned composition is as the predetermined zone that forms runner 410 and four current drainage body cavitys 420,430,440,450.
Then, in substrate 300, form the structure sheaf 320 of composition, and the sacrifice layer 310 of this structure sheaf covering composition, structure sheaf 320 can be the silicon oxynitride layer that is formed by chemical vapour deposition technique (CVD), the thickness of structure sheaf 320 is substantially between 1.5~2 microns.In addition, the material of structure sheaf 320 is a low-stress material, and its stress value is substantially between the tension of 100~200 MPas (MPa).
Then, on structure sheaf 320, form the resistive layer 330 of composition, with as ejection actuators heater for example, fluid is driven via jet actuator after, by the spray orifice ejection of follow-up manufacturing, resistive layer 330 is by HfB 2, TaAl, TaN or TiN constitute, wherein preferably constitute with TaAl.
Form the separation layer 340 of composition again, cover substrate 300, structure sheaf 320 and resistive layer 330, and form heater contact hole 350, afterwards, on separation layer 340, form the conductive layer 360 of composition, and insert heater contact hole 350, to form the signal transmission line road.At last, on separation layer 340 and conductive layer 360, form protective layer 370, and form signal transmission line road contact hole 380, conductive layer 360 is exposed, in order to follow-up packaging operation.
Next, see also Fig. 3 B, begin to carry out a series of etching work procedure, to form final fluid ejection apparatus.At first, with the wet etch method of anisotropic, etching solution for example is potassium hydroxide (KOH) solution, and sacrifice layer 310, with formation fluid passage 390, manifold 400 and opening 395, and is exposed in the back side of etching substrate 300 by promptly second 3002.
The A/F of manifold 400 is substantially between 160~200 microns, the width of opening 395 is substantially between 1100~1200 microns, fluid passage 390 inwalls and horizontal line angle theta are roughly 54.74 degree, so, fluid passage 390 after the etching is a low wide and up narrow shape and structure, in addition, because make fluid passage 390, claim that this manufacture method is single petrochemical industry manufacture method in substrate 300.In addition, fluid passage 390 downwards and the fluid storage groove be interconnected.
Use the wet etch method etch sacrificial layer 310 of hydrofluoric acid containing (HF) solution again, afterwards, for example be the wet etch method etching substrate 300 of potassium hydroxide (KOH) solution once again with etching solution, enlarging the zone that sacrifice layer 310 is emptied, and form fluid cavity 420,430,440,450 and runner 410.Wherein, fluid cavity 430,440 is communicated with manifold 400, and fluid cavity 420,450 is communicated with runner 410, and fluid cavity 420 and 430,440 and 450 is dislocation arrangement, and that fluid cavity 420 and 440,430 and 450 is arranged is identical.Fluid cavity 430,440 to the length at manifold apertures center substantially between 250~290 microns.
At last, order etch protection layer 370, separation layer 340 and structure sheaf 320 are to form the spray orifice 385 that is communicated with fluid cavity 430,440.But the etching of engraving method using plasma, chemical gas etching, reactive ion etching or laser-induced thermal etching method.So far, promptly finish the manufacture process of single petrochemical fluid jet device.
300 (the dot per inch that are designed to as if every single fluid cavity, dpi), present embodiment can rise to 600dpi with injection density, and reach the effect of quicker injection fluid in the unit interval by means of 420 and 430,440 and 450 dislocation (420 and 440,430 and 450 arrangements are identical).
The present invention utilizes the special connection configuration of manifold-runner on the light shield-fluid cavity, under the situation that does not increase the manifold number, can finish the purpose that increases the fluid cavity number smoothly, improved in the prior art on the one hand, the multithread body cavity needs the manufacture of branch manifold, has reduced the complexity and the manufacturing cost of manufacture process, on the other hand, owing to be single manifold structure only, can make the wafer bottom reserve how available area.
Embodiment two
The fluid ejection apparatus architectural feature of present embodiment is: be interconnected between fluid cavity 620,630,640,650, runner 610 and manifold 600 threes, fluid cavity 620,630,640,650 all is dislocation arrangement, the difference of present embodiment and embodiment one is, embodiment one only fluid cavity 420,430 and 440,450 is dislocation arrangement, and all fluid cavitys 620,630,640,650 of present embodiment all are dislocation arrangement.
See also the structure that Fig. 5 B (generalized section) and Fig. 6 (schematic top plan view) illustrate the single petrochemical fluid jet device of present embodiment, wherein, the profile of Fig. 5 B for dissecing along 5b-5b line among Fig. 6.This fluid ejection apparatus comprises substrate 500, fluid passage 590, manifold 600, four current drainage body cavitys 620,630,640,650; runner 610, structure sheaf 520, resistive layer 530, separation layer 540; conductive layer 560, protective layer 570, a plurality of signal transmission lines road contact hole 580, and a plurality of spray orifice 585.
Fluid passage 590 is formed in the substrate 500 with manifold 600, and wherein, manifold 600 is the narrow opening section of fluid passage 590.Four current drainage body cavitys 620,630,640,650 and runner 610 are formed between substrate 500 and the structure sheaf 520, wherein fluid cavity 620,630,640,650 is as follows with being provided with of runner 610: fluid cavity 630,640 is communicated with manifold 600, fluid cavity 620,650 is communicated with runner 610, because runner 610 makes manifold 600 be communicated with runner 610 for the circular passage around fluid cavity 620,630,640,650 outsides.
By above-mentioned set-up mode, formed the structure that fluid cavity 620,630,640,650 and runner 610 and manifold 600 threes are connected in series connection mutually.In addition, four current drainage body cavitys 620,630,640,650 all are dislocation arrangement.
Structure sheaf 520 covers on substrate 500 and the fluid cavity 620,630,640,650.Resistive layer 530 is arranged on the structure sheaf 520, and is positioned at the spray orifice both sides, and it represents for example heater of a plurality of ejection actuators, fluid is driven via jet actuator after, by spray orifice 585 ejections.Separation layer 540 covers on substrate 500, structure sheaf 520 and the resistive layer 530, but exposed portions serve resistive layer 530, to form the heater contact hole.Conductive layer 560 covers on the separation layer 540, and inserts the heater contact hole, as the signal transmission line road.
Protective layer 570 covers on separation layer 540 and the conductive layer 560, and exposed portions serve conductive layer 560, forms a plurality of signal transmission lines road contact hole 580, in order to follow-up packaging operation.In addition, a plurality of spray orifices 585 run through in each layer that is formed at protective layer 570, separation layer 540 and structure sheaf 520, and are communicated with fluid cavity 620,630,640,650.
The architectural feature of the fluid ejection apparatus of present embodiment is the connection design between fluid cavity 620,630,640,650 and runner 610 and manifold 600 threes, this kind particular topology, can improve in the prior art when making a plurality of fluid cavity, the complicated technology of the necessary corresponding manifold of one current drainage body cavity, only can supply the fluid to each fluid cavity 620,630,640,650 and manipulate, and reach ink-jet effect same as the prior art by means of single manifold 600.In addition, utilize fluid cavity 620,630,640,650 dislocation to arrange, can improve the injection density of device significantly.
See also Fig. 5 A, Fig. 5 B and Fig. 6 again, the manufacturing of the single petrochemical fluid jet device of another embodiment of the present invention is described.At first, shown in Fig. 5 A, provide substrate 500, silicon base for example, the thickness of substrate 500 is substantially between 625~675 microns.Then, on first 5001 of substrate 500, form the sacrifice layer 510 of composition, sacrifice layer 510 is made of boron-phosphorosilicate glass (BPSG), phosphorosilicate glass (PSG) or silica material, wherein preferably constitutes with phosphorosilicate glass, and the thickness of sacrifice layer 510 is substantially between 1~2 micron.
As shown in Figure 6, the sacrifice layer of above-mentioned composition is as the predetermined zone that forms runner 610 and four current drainage body cavitys 620,630,640,650.
Then, in substrate 500, form the structure sheaf 520 of composition, and the sacrifice layer 510 of this structure sheaf covering composition, structure sheaf 520 can be the silicon oxynitride layer that is formed by chemical vapour deposition technique (CVD), the thickness of structure sheaf 520 is substantially between 1.5~2 microns.In addition, structure sheaf 520 is made of low-stress material, and its stress value is substantially between 100~200 MPas (MPa) tension.
Then, on structure sheaf 520, form the resistive layer 530 of composition, with as ejection actuators heater for example, fluid is driven via jet actuator after, by the spray orifice ejection of follow-up manufacturing, resistive layer 530 is by HfB 2, TaAl, TaN or TiN constitute, preferably constitute by TaAl.
Form the separation layer 540 of composition again, cover substrate 500, structure sheaf 520 and resistive layer 530, and form heater contact hole 550, afterwards, on separation layer 540, form the conductive layer 560 of composition, and insert heater contact hole 550, to form the signal transmission line road.At last, on separation layer 540 and conductive layer 560, form protective layer 570, and form signal transmission line road contact hole 580, conductive layer 560 is exposed, in order to follow-up packaging operation.
Next, see also Fig. 5 B, a series of etch process that goes into effect is to form final fluid ejection apparatus.At first, with the wet etch method of anisotropic, etching solution for example is potassium hydroxide (KOH) solution, and sacrifice layer 510, with formation fluid passage 590, manifold 600 and opening 595, and is exposed in the back side of etching substrate 500 by promptly second 5002.
The A/F of manifold 600 is substantially between 160~200 microns, the width of opening 595 is substantially between 1100~1200 microns, fluid passage 590 inwalls and horizontal line angle theta are roughly 54.74 degree, and the fluid passage 590 after the etching is a low wide and up narrow shape and structure like this.In addition, fluid passage 590 is interconnected with a fluid accumulator tank downwards.
Subsequently, with the wet etch method etch sacrificial layer 510 of hydrofluoric acid containing (HF) solution, afterwards, once again with for example wet etch method etching substrate 500 of potassium hydroxide (KOH) solution of etching solution, enlarging the zone that sacrifice layer 510 is emptied, and form fluid cavity 620,630,640,650 and runner 610.Wherein fluid cavity 630,640 is communicated with manifold 600, and fluid cavity 620,650 is communicated with runner 610, and four current drainage body cavitys 620,630,640,650 all are the mutual dislocation arrangement.Fluid cavity 630,640 to the length at manifold apertures center substantially between 250~290 microns.
At last, order etch protection layer 570, separation layer 540 and structure sheaf 520 are to form the spray orifice 585 that is communicated with fluid cavity 630,640.Etching work procedure can utilize plasma etching, chemical gas etching, reactive ion etching or laser-induced thermal etching method.So far, finished the manufacture process of single petrochemical fluid jet device.
300 (the dot per inch that are designed to as if every single fluid cavity, dpi), present embodiment can be arranged by making 620,630,640,650 dislocation of four current drainage body cavitys, injection density is risen to 1200dpi, and reach the effect of quicker injection fluid in the unit interval, and because the increase of resolution has improved the quality of prining simultaneously.
Embodiment three
The fluid ejection apparatus architectural feature of present embodiment is: be interconnected between fluid cavity 820,830,840,850 and runner 810 and manifold 800 threes, fluid cavity 820,830,840,850 all is dislocation arrangement, and the width of fluid cavity 820,830,840,850 has two or more sizes (d9>d10>d11) for example.The difference of present embodiment and embodiment two is, the fluid cavity 620,630,640,650 of embodiment two is dislocation arrangement, and present embodiment is except that all fluid cavitys 820,830,840,850 are dislocation arrangement, the width of fluid cavity 820,830,840,850 change reach two or more.
See also the structure that Fig. 7 B (generalized section) and Fig. 8 (schematic top plan view) illustrate the single petrochemical fluid jet device of present embodiment, wherein, the profile of Fig. 7 B for dissecing along 7b-7b line among Fig. 8.This fluid ejection apparatus comprises substrate 700, fluid passage 790, manifold 800, four current drainage body cavitys 820,830,840,850; runner 810, structure sheaf 720, resistive layer 730, separation layer 740; conductive layer 760, protective layer 770, a plurality of signal transmission lines road contact hole 780, and a plurality of spray orifice 785.
Fluid passage 790 is formed in the substrate 700 with manifold 800, and wherein manifold 800 is the narrow opening section of fluid passage 790.Four current drainage body cavitys 820,830,840,850 and runner 810 are formed between substrate 700 and the structure sheaf 720, wherein fluid cavity 820,830,840,850 is as follows with being provided with of runner 810: fluid cavity 830,840 is communicated with manifold 800, fluid cavity 820,850 is communicated with runner 810, because runner 810 makes manifold 800 be communicated with runner 810 for the circular passage around fluid cavity 820,830,840,850 outsides.
According to above-mentioned set-up mode, formed the structure that fluid cavity 820,830,840,850 and runner 810 and manifold 800 threes are connected in series connection mutually.In addition, four current drainage body cavitys 820,830,840,850 all are dislocation arrangement, and the width dimensions of fluid cavity 820,830,840,850 can be done two or more changes and (for example is d9>d10>d11).
Structure sheaf 720 is covered on substrate 700 and the fluid cavity 820,830,840,850.Resistive layer 730 is arranged on the structure sheaf 720, and is positioned at the spray orifice both sides, and it represents for example heater of a plurality of ejection actuators, fluid is driven via jet actuator after, by spray orifice 785 ejections.Separation layer 740 covers on substrate 700, structure sheaf 720 and the resistive layer 730, but exposed portions serve resistive layer 730 is to form the heater contact hole.Conductive layer 760 covers on the separation layer 740 and inserts the heater contact hole, as the signal transmission line road.
Protective layer 770 is covered on separation layer 740 and the conductive layer 760, and exposed portions serve conductive layer 760, forms a plurality of signal transmission lines road contact hole 780, in order to follow-up packaging operation.In addition, a plurality of spray orifices 785 run through in each layer that is formed at protective layer 770, separation layer 740 and structure sheaf 720, and are communicated with fluid cavity 820,830,840,850.
The architectural feature of the fluid ejection apparatus of present embodiment is the connection design between fluid cavity 820,830,840,850 and runner 810 and manifold 800 threes, this kind particular topology, can improve prior art when making a plurality of fluid cavity, the complicated technology of the necessary corresponding manifold of one current drainage body cavity, only just can supply the fluid to each fluid cavity 820,830,840,850 and manipulate, and reach ink-jet effect same as the prior art by means of single manifold 800.
In addition, utilize fluid cavity 820,830,840,850 dislocation to arrange, can improve the injection density of device significantly.In addition, the width dimensions of fluid cavity 820,830,840,850 also can be made two or more changes (d9>d10>d11) for example.
See also Fig. 7 A, Fig. 7 B and Fig. 8 again, the manufacture process of the single petrochemical fluid jet device of another embodiment of the present invention is described.At first, shown in Fig. 7 A, provide substrate 700, silicon base for example, the thickness of substrate 700 is substantially between 625~675 microns.Then, on first 7001 of substrate 700, form the sacrifice layer 710 of composition, sacrifice layer 710 is made of boron-phosphorosilicate glass (BPSG), phosphorosilicate glass (PSG) or silica material, preferably constitutes with phosphorosilicate glass, and the thickness of sacrifice layer 710 is substantially between 1~2 micron.
As shown in Figure 8, the sacrifice layer of above-mentioned composition is as the predetermined zone that forms runner 810 and four current drainage body cavitys 820,830,840,850.
In substrate 700, form the structure sheaf 720 of composition again, and the sacrifice layer 710 of this structure sheaf covering composition, structure sheaf 720 can be the silicon oxynitride layer that is formed by chemical vapour deposition technique (CVD), the thickness of structure sheaf 720 is substantially between 1.5~2 microns.In addition, the material of structure sheaf 720 is a low-stress material, and its stress value is substantially between 100~200 MPas (MPa).
Then, on structure sheaf 720, form the resistive layer 730 of composition, with as ejection actuators heater for example, fluid is driven via jet actuator after, by the spray orifice ejection of follow-up manufacturing, resistive layer 530 is by HfB 2, TaAl, TaN or TiN constitute, preferably constitute with TaAl.
Form the separation layer 740 of composition again, cover substrate 700, structure sheaf 720 and resistive layer 730, and form heater contact hole 750, afterwards, on separation layer 740, form the conductive layer 760 of composition, and insert heater contact hole 750, to form the signal transmission line road.At last, on separation layer 740 and conductive layer 760, form protective layer 770, and form signal transmission line road contact hole 780, conductive layer 760 is exposed, in order to follow-up packaging operation.
Next, see also Fig. 7 B, begin to carry out a series of etching work procedure, to form final fluid ejection apparatus.At first, with the wet etch method of anisotropic, etching solution for example is potassium hydroxide (KOH) solution, and sacrifice layer 710, with formation fluid passage 790, manifold 800 and opening 795, and is exposed in the back side of etching substrate 700 by promptly second 7002.
The A/F of manifold 800 is substantially between 160~200 microns, the width of opening 795 is substantially between 1100~1200 microns, fluid passage 790 inwalls and horizontal line angle theta are roughly 54.74 degree, and like this, the fluid passage 790 after the etching is a low wide and up narrow shape and structure.In addition, fluid passage 790 downwards and the fluid storage groove be interconnected.
Then, wet etch method with hydrofluoric acid containing (HF) solution, etch sacrificial layer 710, afterwards, for example be the wet etch method etch sacrificial layer 710 of potassium hydroxide (KOH) solution once again with etching solution, enlarging the zone that sacrifice layer 710 is emptied, and form fluid cavity 820,830,840,850 and runner 810.Wherein fluid cavity 830,840 is communicated with manifold 800, fluid cavity 820,850 is communicated with runner 810, and four current drainage body cavitys 820,830,840,850 all are the arrangement of mutual dislocation, and the width dimensions of fluid cavity, also can make two or more changes (d9>d10>d11) for example.Fluid cavity 830,840 to the length at manifold apertures center substantially between 250~290 microns.
At last, order etch protection layer 770, separation layer 740 and structure sheaf 720 are to form the spray orifice 785 that is communicated with fluid cavity 830,840.But the etching of etching work procedure using plasma, chemical gas etching, reactive ion etching or laser-induced thermal etching method.So far, then finish the manufacture process of single petrochemical fluid jet device.
300 (the dot per inch that are designed to as if every single fluid cavity, dpi), present embodiment can be arranged by means of the dislocation of four current drainage body cavitys 820,830,840,850, injection density is risen to 1200dpi, and reach the effect of quicker injection fluid in the unit interval, and because the increase of resolution has improved the quality of prining simultaneously.In addition, because of the change of fluid cavity size, injection flow also changes for it, and the effect of prining on polychrome rank more is provided.
Though the present invention discloses as above with preferred implementation; but above-mentioned explanation is not to be limitation of the invention; the any technical staff in this area is under the prerequisite that does not exceed design of the present invention and protection domain; can make multiple change and retouching, so protection scope of the present invention should be as the criterion with the scope that appending claims defines.

Claims (14)

1. single petrochemical fluid jet device comprises:
One substrate;
One is formed at described suprabasil structure sheaf;
One be arranged in the described substrate, with the manifold of accommodating fluid;
A plurality of first-class body cavitys that are arranged between described substrate and the structure sheaf, holding fluid to be sprayed, and described first-class body cavity directly is communicated with described manifold;
At least one is arranged at second fluid cavity between described substrate and the structure sheaf, and holding fluid to be sprayed, and this second fluid cavity directly is not communicated with described manifold;
One is arranged at the runner between described substrate and the structure sheaf, fluid is conducted to described second fluid cavity; And
A plurality ofly pass described structure sheaf and be communicated with the described first-class body cavity and second fluid cavity to spray the spray orifice of fluid.
2. device as claimed in claim 1, wherein, described runner is around the outside of the described first-class body cavity and second fluid cavity.
3. the manufacture method of a single petrochemical fluid jet device comprises the following steps:
One substrate is provided;
Form the sacrifice layer of a composition in described substrate, the sacrifice layer of this composition is as the predetermined zone that forms first-class road and a plurality of fluid cavitys;
Form the structure sheaf of a composition in described substrate, this structure sheaf covers the sacrifice layer of described composition;
Form one and run through the manifold of described substrate, and expose the sacrifice layer of described composition;
Remove described sacrifice layer, to finish the manufacture process of described runner and described fluid cavity, wherein, described fluid cavity comprises a plurality of first-class body cavitys and at least one second fluid cavity, and described first-class body cavity directly is communicated with described manifold, and described second fluid cavity is communicated with described manifold by runner; And
The described structure sheaf of etching is to form the spray orifice that a plurality of and described fluid cavity is communicated with.
4. manufacture method as claimed in claim 3, wherein, described sacrifice layer is made of boron-phosphorosilicate glass (BPSG), phosphorosilicate glass (PSG) or silica.
5. manufacture method as claimed in claim 3, wherein, the thickness of described sacrifice layer is between 1~2 micron.
6. manufacture method as claimed in claim 3, wherein, described structure sheaf is made of silicon oxynitride.
7. manufacture method as claimed in claim 3, wherein, the thickness of described structure sheaf is between 1.5~2 microns.
8. manufacture method as claimed in claim 3, wherein, described structure sheaf is made of low-stress material.
9. manufacture method as claimed in claim 8, wherein, the stress value of described low-stress material is between 100~200 MPas (MPa) tension.
10. manufacture method as claimed in claim 3, wherein, the described fluid cavity of at least two rows is dislocation arrangement.
11. manufacture method as claimed in claim 3, wherein, described fluid cavity all is dislocation arrangement.
12. manufacture method as claimed in claim 3, wherein, described fluid cavity all is dislocation arrangement, and size is different.
13. manufacture method as claimed in claim 3, wherein, described runner is around the outside of described fluid cavity.
14. manufacture method as claimed in claim 3 wherein, after removing described sacrifice layer, enlarges the step of described fluid chamber volume again.
CNB2004100041563A 2004-02-13 2004-02-13 Single petrifaction fluid jetting device and manufacturing method thereof Expired - Fee Related CN100341699C (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367324A (en) * 1986-06-10 1994-11-22 Seiko Epson Corporation Ink jet recording apparatus for ejecting droplets of ink through promotion of capillary action
US6267468B1 (en) * 2000-04-13 2001-07-31 Hewlett-Packard Company Printhead substrate having a mixture of single and double sided elongate ink feed channels
US6412921B1 (en) * 1998-06-29 2002-07-02 Olivetti Tecnost S.P.A. Ink jet printhead
US6478404B2 (en) * 2001-01-30 2002-11-12 Hewlett-Packard Company Ink jet printhead

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367324A (en) * 1986-06-10 1994-11-22 Seiko Epson Corporation Ink jet recording apparatus for ejecting droplets of ink through promotion of capillary action
US6412921B1 (en) * 1998-06-29 2002-07-02 Olivetti Tecnost S.P.A. Ink jet printhead
US6267468B1 (en) * 2000-04-13 2001-07-31 Hewlett-Packard Company Printhead substrate having a mixture of single and double sided elongate ink feed channels
US6478404B2 (en) * 2001-01-30 2002-11-12 Hewlett-Packard Company Ink jet printhead

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