CH619072A5 - - Google Patents
Download PDFInfo
- Publication number
- CH619072A5 CH619072A5 CH1215777A CH1215777A CH619072A5 CH 619072 A5 CH619072 A5 CH 619072A5 CH 1215777 A CH1215777 A CH 1215777A CH 1215777 A CH1215777 A CH 1215777A CH 619072 A5 CH619072 A5 CH 619072A5
- Authority
- CH
- Switzerland
- Prior art keywords
- zone
- isolation
- insulation
- diffusion
- concentration
- Prior art date
Links
- 238000002955 isolation Methods 0.000 description 19
- 238000009413 insulation Methods 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 11
- 238000011109 contamination Methods 0.000 description 9
- 230000007704 transition Effects 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000000979 retarding effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/736,646 US4113512A (en) | 1976-10-28 | 1976-10-28 | Technique for preventing forward biased epi-isolation degradation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH619072A5 true CH619072A5 (xx) | 1980-08-29 |
Family
ID=24960699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1215777A CH619072A5 (xx) | 1976-10-28 | 1977-10-05 |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US4113512A (xx) |
| JP (1) | JPS5354490A (xx) |
| BR (1) | BR7706777A (xx) |
| CA (1) | CA1057419A (xx) |
| CH (1) | CH619072A5 (xx) |
| DE (1) | DE2746700A1 (xx) |
| ES (1) | ES463621A1 (xx) |
| FR (1) | FR2369687A1 (xx) |
| GB (1) | GB1584990A (xx) |
| IT (1) | IT1114162B (xx) |
| NL (1) | NL7711278A (xx) |
| SE (1) | SE431272B (xx) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4178190A (en) * | 1975-06-30 | 1979-12-11 | Rca Corporation | Method of making a bipolar transistor with high-low emitter impurity concentration |
| US5041896A (en) * | 1989-07-06 | 1991-08-20 | General Electric Company | Symmetrical blocking high voltage semiconductor device and method of fabrication |
| TW274628B (xx) * | 1994-06-03 | 1996-04-21 | At & T Corp | |
| JP3408098B2 (ja) * | 1997-02-20 | 2003-05-19 | キヤノン株式会社 | 固体撮像装置及びｘ線撮像装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1050805A (xx) * | 1964-06-23 | 1900-01-01 | ||
| US3551760A (en) * | 1966-03-28 | 1970-12-29 | Hitachi Ltd | Semiconductor device with an inversion preventing layer formed in a diffused region |
| US3653988A (en) * | 1968-02-05 | 1972-04-04 | Bell Telephone Labor Inc | Method of forming monolithic semiconductor integrated circuit devices |
| US3631311A (en) * | 1968-03-26 | 1971-12-28 | Telefunken Patent | Semiconductor circuit arrangement with integrated base leakage resistance |
| US3964705A (en) * | 1970-12-23 | 1976-06-22 | Bassani S.P.A. | Frame for the mounting of interchangeable electrical units |
| US3697827A (en) * | 1971-02-09 | 1972-10-10 | Unitrode Corp | Structure and formation of semiconductors with transverse conductivity gradients |
| US3760239A (en) * | 1971-06-09 | 1973-09-18 | Cress S | Coaxial inverted geometry transistor having buried emitter |
| DE2241600A1 (de) * | 1971-08-26 | 1973-03-01 | Dionics Inc | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung |
| US3921199A (en) * | 1973-07-31 | 1975-11-18 | Texas Instruments Inc | Junction breakdown voltage by means of ion implanted compensation guard ring |
| US4021270A (en) * | 1976-06-28 | 1977-05-03 | Motorola, Inc. | Double master mask process for integrated circuit manufacture |
-
1976
- 1976-10-28 US US05/736,646 patent/US4113512A/en not_active Expired - Lifetime
-
1977
- 1977-08-31 JP JP10373377A patent/JPS5354490A/ja active Granted
- 1977-09-09 FR FR7727688A patent/FR2369687A1/fr active Granted
- 1977-09-20 IT IT27706/77A patent/IT1114162B/it active
- 1977-09-26 CA CA287,528A patent/CA1057419A/en not_active Expired
- 1977-09-30 GB GB40835/77A patent/GB1584990A/en not_active Expired
- 1977-10-05 CH CH1215777A patent/CH619072A5/de not_active IP Right Cessation
- 1977-10-07 BR BR7706777A patent/BR7706777A/pt unknown
- 1977-10-14 NL NL7711278A patent/NL7711278A/xx not_active Application Discontinuation
- 1977-10-18 DE DE19772746700 patent/DE2746700A1/de active Granted
- 1977-10-25 SE SE7711985A patent/SE431272B/sv unknown
- 1977-10-27 ES ES463621A patent/ES463621A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| ES463621A1 (es) | 1978-07-01 |
| JPS5354490A (en) | 1978-05-17 |
| DE2746700C2 (xx) | 1988-12-22 |
| GB1584990A (en) | 1981-02-18 |
| US4113512A (en) | 1978-09-12 |
| FR2369687A1 (fr) | 1978-05-26 |
| CA1057419A (en) | 1979-06-26 |
| BR7706777A (pt) | 1978-08-22 |
| JPS5424270B2 (xx) | 1979-08-20 |
| SE431272B (sv) | 1984-01-23 |
| IT1114162B (it) | 1986-01-27 |
| SE7711985L (sv) | 1978-04-29 |
| NL7711278A (xx) | 1978-05-03 |
| DE2746700A1 (de) | 1978-05-11 |
| FR2369687B1 (xx) | 1980-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3509899C2 (de) | MOS-Transistoranordnung mit veränderlicher Leitfähigkeit | |
| DE68925116T2 (de) | In gemischter Technologie hergestellte integrierte Schaltung mit CMOS-Strukturen und leistungsfähigen lateralen Bipolartransistoren mit erhöhter Early-Spannung und Herstellungsverfahren dafür | |
| DE2812740A1 (de) | Verfahren zum herstellen einer vertikalen, bipolaren integrierten schaltung | |
| DE2823967C2 (xx) | ||
| DE3545040C2 (de) | Verfahren zur Herstellung einer vergrabenen Schicht und einer Kollektorzone in einer monolithischen Halbleitervorrichtung | |
| DE2752439A1 (de) | Verfahren zur herstellung von silicium-halbleiteranordnungen unter einsatz einer ionenimplantation und zugehoerige halbleiteranordnung | |
| DE69315279T2 (de) | Feldeffekttransistor mit Struktur zum Verhindern des Heisse-Elektronen-Effekts und Verfahren zur Herstellung | |
| DE68910169T2 (de) | Verfahren zur Herstellung einer auf einem N-Typ-Substrat integrierten Schaltung, umfassend vertikale PNP- und NPN-Transistoren, die voneinander isoliert sind. | |
| DE2517690B2 (de) | Verfahren zum Herstellen eines Halbleiterbauelements | |
| DE1162488B (de) | Halbleiterbauelement mit zwei Elektroden an einer Zone und Verfahren zum Betrieb | |
| DE1948921A1 (de) | Halbleiterbauelement,insbesondere monolithischer integrierter Schaltkreis und Verfahren zu seiner Herstellung | |
| DE1259469B (de) | Verfahren zur Herstellung von inversionsschichtfreien Halbleiteruebergaengen | |
| DE1614852B2 (de) | Verfahren zur Herstellung einer integrierten Halbleiterschaltung mit einem NPN-Transistor, einem PNP-Transistor und weiteren Schaltungselementen | |
| DE2558925C2 (de) | Verfahren zur Herstellung einer integrierten Injektions-Schaltungsanordnung | |
| DE1229650B (de) | Verfahren zum Herstellen eines Halbleiter-bauelementes mit pn-UEbergang nach der Planar-Diffusionstechnik | |
| CH619072A5 (xx) | ||
| DE2236897B2 (xx) | ||
| DE2442926A1 (de) | Herstellungsverfahren und integrierter schaltungsbaustein mit einem transistor fuer hohe betriebsspannungen | |
| DE1914745A1 (de) | Halbleiterbauelement mit mindestens einem UEbergang | |
| DE2219696C3 (de) | Verfarhen zum Herstellen einer monolithisch integrierten Halbleiteranordnung | |
| DE2439535A1 (de) | Verfahren zum eindiffundieren aktiver stoerelemente in halbleitermaterialien | |
| DE1564170C3 (de) | Halbleiterbauelement hoher Schaltgeschwindigkeit und Verfahren zu seiner Herstellung | |
| DE2507038C3 (de) | Inverser Planartransistor und Verfahren zu seiner Herstellung | |
| DE1464921B2 (de) | Verfahren zum herstellen einer halbleiteranordnung | |
| DE19752052A1 (de) | Halbleitervorrichtung und Herstellungsverfahren |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |