CH537631A - Semiconductor charge storage device - Google Patents

Semiconductor charge storage device

Info

Publication number
CH537631A
CH537631A CH1430571A CH1430571A CH537631A CH 537631 A CH537631 A CH 537631A CH 1430571 A CH1430571 A CH 1430571A CH 1430571 A CH1430571 A CH 1430571A CH 537631 A CH537631 A CH 537631A
Authority
CH
Switzerland
Prior art keywords
storage device
charge storage
semiconductor charge
semiconductor
device
Prior art date
Application number
CH1430571A
Other languages
German (de)
Inventor
Elwood Smith George
Francis Tompsett Michael
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US7805070A priority Critical
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH537631A publication Critical patent/CH537631A/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/108Dynamic random access memory structures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42396Gate electrodes for field effect devices for charge coupled devices
CH1430571A 1970-10-05 1971-10-01 Semiconductor charge storage device CH537631A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US7805070A true 1970-10-05 1970-10-05

Publications (1)

Publication Number Publication Date
CH537631A true CH537631A (en) 1973-05-31

Family

ID=22141614

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1430571A CH537631A (en) 1970-10-05 1971-10-01 Semiconductor charge storage device

Country Status (7)

Country Link
AU (1) AU432367B2 (en)
BE (1) BE773362A (en)
CH (1) CH537631A (en)
DE (1) DE2149325A1 (en)
FR (1) FR2110213A1 (en)
GB (1) GB1325099A (en)
NL (1) NL7113593A (en)

Also Published As

Publication number Publication date
NL7113593A (en) 1972-04-07
GB1325099A (en) 1973-08-01
AU3398871A (en) 1973-02-22
FR2110213A1 (en) 1972-06-02
BE773362A1 (en)
DE2149325A1 (en) 1972-04-13
AU432367B2 (en) 1973-02-22
BE773362A (en) 1972-01-17

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Legal Events

Date Code Title Description
PL Patent ceased