CH534024A - Verfahren zum Verbinden eines ersten Werkstückes mit einem zweiten Werkstück - Google Patents

Verfahren zum Verbinden eines ersten Werkstückes mit einem zweiten Werkstück

Info

Publication number
CH534024A
CH534024A CH135971A CH135971A CH534024A CH 534024 A CH534024 A CH 534024A CH 135971 A CH135971 A CH 135971A CH 135971 A CH135971 A CH 135971A CH 534024 A CH534024 A CH 534024A
Authority
CH
Switzerland
Prior art keywords
workpiece
joining
Prior art date
Application number
CH135971A
Other languages
English (en)
Inventor
Howell Cranston Benjamin
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH534024A publication Critical patent/CH534024A/de

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/06Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of high energy impulses, e.g. magnetic energy
    • B23K20/08Explosive welding
    • B23K20/085Explosive welding for tubes, e.g. plugging
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00Electric solid-state thin-film or thick-film devices, not otherwise provided for
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    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
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    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01005Boron [B]
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    • H01L2924/01068Erbium [Er]
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    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
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    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
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    • H01L2924/19042Component type being an inductor
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    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
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    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S228/00Metal fusion bonding
    • Y10S228/903Metal to nonmetal

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Die Bonding (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Manufacture Of Switches (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Manufacturing Of Printed Wiring (AREA)
CH135971A 1970-01-29 1971-01-29 Verfahren zum Verbinden eines ersten Werkstückes mit einem zweiten Werkstück CH534024A (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US682970A 1970-01-29 1970-01-29
US6843170A 1970-08-31 1970-08-31
US00202567A US3805120A (en) 1970-01-29 1971-11-26 Explosive bonding of workpieces

Publications (1)

Publication Number Publication Date
CH534024A true CH534024A (de) 1973-02-28

Family

ID=27358199

Family Applications (1)

Application Number Title Priority Date Filing Date
CH135971A CH534024A (de) 1970-01-29 1971-01-29 Verfahren zum Verbinden eines ersten Werkstückes mit einem zweiten Werkstück

Country Status (7)

Country Link
US (2) US3727296A (de)
BE (1) BE762165A (de)
CH (1) CH534024A (de)
DE (1) DE2104273C3 (de)
FR (1) FR2109543A5 (de)
GB (1) GB1353242A (de)
NL (1) NL152781B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8711105U1 (de) * 1987-08-14 1987-11-26 Siemens AG, 1000 Berlin und 8000 München Leiterplatte für die Elektronik
US5897794A (en) * 1997-01-30 1999-04-27 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for ablative bonding using a pulsed electron
US6303875B1 (en) * 1998-01-23 2001-10-16 Kabushiki Kaisha Toshiba IC packages replaceable by IC packages having a smaller pin count and circuit device using the same
US6730370B1 (en) 2000-09-26 2004-05-04 Sveinn Olafsson Method and apparatus for processing materials by applying a controlled succession of thermal spikes or shockwaves through a growth medium
US6554927B1 (en) * 2000-11-24 2003-04-29 Sigmabond Technologies Corporation Method of explosive bonding, composition therefor and product thereof
DE10334391B4 (de) * 2003-07-28 2005-10-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Erzeugung von Verbindungen in der Mikroelektronik
DE102006019856A1 (de) * 2006-04-28 2007-11-08 Admedes Schuessler Gmbh Verfahren zum Bearbeiten von Werkstoffen unter Verwendung von porösem Silizium als Sprengstoff
WO2009111774A2 (en) * 2008-03-07 2009-09-11 The Ohio State University Low-temperature spot impact welding driven without contact
DE102008020327A1 (de) * 2008-04-23 2009-07-30 Continental Automotive Gmbh Verfahren zur Fixierung, Bauelement, Substrat und Schaltungsanordnungen
US8203123B2 (en) 2009-03-10 2012-06-19 Alliant Techsystems Inc. Neutron detection by neutron capture-initiated relaxation of a ferroelectrically, ferromagnetically, and/or chemically metastable material
US8309045B2 (en) 2011-02-11 2012-11-13 General Electric Company System and method for controlling emissions in a combustion system
CN102489868B (zh) * 2011-12-21 2013-08-14 湖南湘投金天钛金属有限公司 一种圆形钛钢复合板的制备方法
US11084122B2 (en) * 2017-07-13 2021-08-10 Ohio State Innovation Foundation Joining of dissimilar materials using impact welding

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US26858A (en) * 1860-01-17 Improvement in sap-conductors
US2067213A (en) * 1935-06-17 1937-01-12 Trojan Powder Co Explosive
US2909758A (en) * 1953-09-24 1959-10-20 Henry J Modrey Explosive terminal and method of firing
US3132044A (en) * 1957-11-19 1964-05-05 Varian Associates Metalized ceramic for bonding to metals
US3233312A (en) * 1962-08-03 1966-02-08 Du Pont Explosively bonded product
US3323204A (en) * 1963-10-11 1967-06-06 Libbey Owens Ford Glass Co Method of sealing metal to glass
DE1302467B (de) * 1964-01-17 1971-12-23 Dynamit Nobel Ag Anordnung zum Explosionsplattieren von Metallplatten
SE315469B (de) * 1964-03-09 1969-09-29 Asahi Chemical Ind
US3380908A (en) * 1964-03-23 1968-04-30 Asahi Chemical Ind Explosion bonded electrode for electrolysis
US3434197A (en) * 1964-08-03 1969-03-25 Singer General Precision Explosive welding
US3316458A (en) * 1965-01-29 1967-04-25 Hughes Aircraft Co Electronic circuit assembly with recessed substrate mounting means
US3440027A (en) * 1966-06-22 1969-04-22 Frances Hugle Automated packaging of semiconductors
US3439408A (en) * 1967-06-29 1969-04-22 Du Pont Process for initiating explosive and charge therefor
US3543388A (en) * 1967-12-29 1970-12-01 Hexcel Corp Controlled area explosive bonding

Also Published As

Publication number Publication date
FR2109543A5 (de) 1972-05-26
NL7101134A (de) 1971-08-02
US3805120A (en) 1974-04-16
BE762165A (fr) 1971-07-01
US3727296A (en) 1973-04-17
DE2104273B2 (de) 1973-04-05
GB1353242A (en) 1974-05-15
NL152781B (nl) 1977-04-15
DE2104273A1 (de) 1971-09-16
DE2104273C3 (de) 1973-10-25

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