CA945046A - Silicon carbide junction diode - Google Patents
Silicon carbide junction diodeInfo
- Publication number
- CA945046A CA945046A CA098,885A CA98885A CA945046A CA 945046 A CA945046 A CA 945046A CA 98885 A CA98885 A CA 98885A CA 945046 A CA945046 A CA 945046A
- Authority
- CA
- Canada
- Prior art keywords
- silicon carbide
- junction diode
- carbide junction
- diode
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US84025569A | 1969-07-09 | 1969-07-09 | |
US1685570A | 1970-03-05 | 1970-03-05 | |
US22373972A | 1972-02-04 | 1972-02-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA945046A true CA945046A (en) | 1974-04-09 |
Family
ID=27360660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA098,885A Expired CA945046A (en) | 1969-07-09 | 1970-11-23 | Silicon carbide junction diode |
Country Status (5)
Country | Link |
---|---|
US (3) | US3565703A (de) |
CA (1) | CA945046A (de) |
DE (1) | DE2054320A1 (de) |
FR (1) | FR2081702B1 (de) |
NL (1) | NL7017628A (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU438364A1 (ru) * | 1972-09-15 | 1976-07-05 | В. И. Павличенко | Диодный источник света на карбтде кремни |
JPS50120966A (de) * | 1974-03-07 | 1975-09-22 | ||
US3999206A (en) * | 1974-11-04 | 1976-12-21 | Vladimir Alexandrovich Babenko | Semiconductor indicating device and method for production of same |
US4026735A (en) * | 1976-08-26 | 1977-05-31 | Hughes Aircraft Company | Method for growing thin semiconducting epitaxial layers |
US4582561A (en) * | 1979-01-25 | 1986-04-15 | Sharp Kabushiki Kaisha | Method for making a silicon carbide substrate |
DE3002671C2 (de) * | 1979-01-25 | 1983-04-21 | Sharp K.K., Osaka | Verfahren zur Herstellung eines Siliciumcarbidsubstrats |
JPS5610921A (en) * | 1979-07-09 | 1981-02-03 | Toshiba Ceramics Co Ltd | Material for equipment for manufacturing semiconductor and its treating furnace |
DE3117072A1 (de) * | 1981-04-29 | 1982-11-18 | Consortium für elektrochemische Industrie GmbH, 8000 München | "verfahren zur herstellung von dotierten halbleiterkoerpern" |
US4947218A (en) * | 1987-11-03 | 1990-08-07 | North Carolina State University | P-N junction diodes in silicon carbide |
US4918497A (en) * | 1988-12-14 | 1990-04-17 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
US5027168A (en) * | 1988-12-14 | 1991-06-25 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
DE68928319T2 (de) * | 1988-12-27 | 1998-01-15 | Canon Kk | Durch elektrisches Feld lichtemittierende Vorrichtung. |
US5394005A (en) * | 1992-05-05 | 1995-02-28 | General Electric Company | Silicon carbide photodiode with improved short wavelength response and very low leakage current |
SE9502249D0 (sv) * | 1995-06-21 | 1995-06-21 | Abb Research Ltd | Converter circuitry having at least one switching device and circuit module |
US6025611A (en) * | 1996-09-20 | 2000-02-15 | The Board Of Regents Of The University Of Nebraska | Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes |
US6204160B1 (en) | 1999-02-22 | 2001-03-20 | The United States Of America As Represented By The Secretary Of The Navy | Method for making electrical contacts and junctions in silicon carbide |
EP3255110B1 (de) | 2011-07-08 | 2022-08-17 | Seiko Epson Corporation | Lichthärtbare tintenzusammensetzung für tintenstrahlaufzeichnung und tintenstrahlaufzeichnungsverfahren |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1141251A (en) * | 1966-09-19 | 1969-01-29 | Gen Electric Co Ltd | Improvements in or relating to luminescent materials |
NL6615060A (de) * | 1966-10-25 | 1968-04-26 | ||
US3458779A (en) * | 1967-11-24 | 1969-07-29 | Gen Electric | Sic p-n junction electroluminescent diode with a donor concentration diminishing from the junction to one surface and an acceptor concentration increasing in the same region |
US3562609A (en) * | 1968-06-04 | 1971-02-09 | Gen Electric | Solid state lamp utilizing emission from edge of a p-n junction |
-
1969
- 1969-07-09 US US840255A patent/US3565703A/en not_active Expired - Lifetime
-
1970
- 1970-03-05 US US16855A patent/US3663722A/en not_active Expired - Lifetime
- 1970-11-04 DE DE19702054320 patent/DE2054320A1/de active Pending
- 1970-11-18 FR FR7041349A patent/FR2081702B1/fr not_active Expired
- 1970-11-23 CA CA098,885A patent/CA945046A/en not_active Expired
- 1970-12-02 NL NL7017628A patent/NL7017628A/xx unknown
-
1972
- 1972-02-04 US US00223739A patent/US3767980A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US3767980A (en) | 1973-10-23 |
FR2081702B1 (de) | 1975-01-10 |
NL7017628A (de) | 1971-09-07 |
FR2081702A1 (de) | 1971-12-10 |
US3565703A (en) | 1971-02-23 |
DE2054320A1 (de) | 1971-10-28 |
US3663722A (en) | 1972-05-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry |
Effective date: 19910409 |