CA927014A - Symmetrical switch having a single gate for controlling firing in both directions - Google Patents

Symmetrical switch having a single gate for controlling firing in both directions

Info

Publication number
CA927014A
CA927014A CA110625A CA110625A CA927014A CA 927014 A CA927014 A CA 927014A CA 110625 A CA110625 A CA 110625A CA 110625 A CA110625 A CA 110625A CA 927014 A CA927014 A CA 927014A
Authority
CA
Canada
Prior art keywords
directions
single gate
symmetrical switch
controlling firing
firing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA110625A
Inventor
John W. Motto, Jr.
J. Bilo William
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of CA927014A publication Critical patent/CA927014A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electronic Switches (AREA)
CA110625A 1970-05-07 1971-04-19 Symmetrical switch having a single gate for controlling firing in both directions Expired CA927014A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3553270A 1970-05-07 1970-05-07

Publications (1)

Publication Number Publication Date
CA927014A true CA927014A (en) 1973-05-22

Family

ID=21883293

Family Applications (1)

Application Number Title Priority Date Filing Date
CA110625A Expired CA927014A (en) 1970-05-07 1971-04-19 Symmetrical switch having a single gate for controlling firing in both directions

Country Status (3)

Country Link
CA (1) CA927014A (en)
DE (1) DE2122121A1 (en)
FR (1) FR2088406A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1882274B1 (en) * 2005-05-18 2019-01-23 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2351783C3 (en) * 1973-10-16 1982-02-11 Brown, Boveri & Cie Ag, 6800 Mannheim Two-way semiconductor switch (Triac)
US4238761A (en) * 1975-05-27 1980-12-09 Westinghouse Electric Corp. Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1882274B1 (en) * 2005-05-18 2019-01-23 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same

Also Published As

Publication number Publication date
DE2122121A1 (en) 1971-11-18
FR2088406A1 (en) 1972-01-07

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