CA2654430C - Carbon nanowall with controlled structure and method for controlling carbon nanowall structure - Google Patents
Carbon nanowall with controlled structure and method for controlling carbon nanowall structure Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 137
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 135
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000001237 Raman spectrum Methods 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims description 74
- 239000003054 catalyst Substances 0.000 claims description 23
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- 239000000446 fuel Substances 0.000 claims description 9
- 239000000470 constituent Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- 239000003792 electrolyte Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 abstract description 7
- 239000002717 carbon nanostructure Substances 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 230000000704 physical effect Effects 0.000 description 4
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 150000001721 carbon Chemical class 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
- 229910003472 fullerene Inorganic materials 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 239000002060 nanoflake Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000003273 ketjen black Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- 239000012050 conventional carrier Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J21/00—Catalysts comprising the elements, oxides, or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium, or hafnium
- B01J21/18—Carbon
- B01J21/185—Carbon nanotubes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/18—Nanoonions; Nanoscrolls; Nanohorns; Nanocones; Nanowalls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
- H01M4/90—Selection of catalytic material
- H01M4/9075—Catalytic material supported on carriers, e.g. powder carriers
- H01M4/9083—Catalytic material supported on carriers, e.g. powder carriers on carbon or graphite
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
- H01M4/90—Selection of catalytic material
- H01M4/92—Metals of platinum group
- H01M4/925—Metals of platinum group supported on carriers, e.g. powder carriers
- H01M4/926—Metals of platinum group supported on carriers, e.g. powder carriers on carbon or graphite
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/50—Fuel cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
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Abstract
Provided is a method for controlling a carbon nanowall (CNW) structure having improved corrosion resistance against high potential by varying the spacing between the carbon nanowall (CNW) walls so that its surface area and crystallinity are controlled. Also provided is a carbon nanowall (CNW) with a high surface area and a carbon nanowall (CNW) with a high crystallinity, both of which have a controlled structure. According to the present invention, provided are: (1) a carbon nanowall, characterized by having a wall surface area of 50 cm2/cm2-substrate.cndot.µm or more; (2) a carbon nanowall, characterized by having a crystallinity such that the D band half value width in the Raman spectrum measured with an irradiation laser wavelength of 514.5 nm is 85 cm-1 or less; and (3) a carbon nanowall, characterized by having not only a wall surface area of 50 cm2/cm2-substrate.cndot.µm or more but also a crystallinity such that the D-band half value width in the Raman spectrum measured with an irradiation laser wavelength of 514.5 nm is 85 cm-1 or less.
Description
DESCRIPTION
CARBON NANOWALL WITH CONTROLLED STRUCTURE AND METHOD FOR
CONTROLLING CARBON NANOWALL STRUCTURE
Technical Field The present invention relates to a method for controlling a carbon nanowall structure, and to a novel carbon nanowall obtainable by this method which has a controlled structure, such as surface area and crystallinity.
Background Art Known examples of carbonaceous porous materials having a nano-size structure include graphite and amorphous, such as fullerene, carbon nanotubes, carbon nanohorns, and carbon nanoflakes.
Among carbonaceous porous materials having a nano-size structure, carbon nanowalls (CNW) are a two-dimensional carbon nanostructure which typically have a wall-like structure in which the walls rise upwards from the surface of a substrate in a substantially uniform direction. Fullerene (such as C60) is a zero-dimensional carbon nanostructure.
Carbon nanotubes can be considered to be a one-dimensional carbon nanostructure.
Carbon nanoflakes are an aggregate of planar, two-dimensional, small pieces similar to carbon nanowalls. Like rose petals, the individual small pieces are not connected to each other so that their carbon nanostructure has an inferior directionality with respect to the substrate to that of carbon nanowalls. Thus, carbon nanowalls have a carbon nanostructure with totally different characteristics from fullerene, carbon nanotubes, carbon nanohorns, and carbon nanoflakes.
The present inventors have already disclosed a production method and production apparatus focusing on carbon nanowalls in JP Patent Publication (Kokai) No.
2005-97113A.
Specifically, as illustrated in Figure 7, a source gas 32 containing at least carbon as a constituent element is introduced into a reaction chamber 10. The reaction chamber 10 is provided with a parallel plate capacitively coupled plasma (CCP) generating mechanism 20 which includes a first electrode 22 and a second electrode 24. In this way, electromagnetic waves such as RF waves are irradiated to form a plasma atmosphere 34 in which the source gas 32 has been turned into plasma. On the other hand, in a radical generating chamber 41 provided externally to the reaction chamber 10, a radical source gas 36 containing at least hydrogen is decomposed by RF waves or the like to generate hydrogen radicals 38. The hydrogen radicals 38 are injected into the plasma atmosphere 34, and carbon nanowalls form on the surface of a substrate 15 arranged on the second electrode 24.
Disclosure of the Invention Although the existence of carbon nanowalls (CNW) and several basic production methods thereof are known, a method for controlling a structure so as to produce the optimum shape and physical properties of a carbon nanowall (CNW) according to its use and application has until now been unclear.
Accordingly, it is an object of the present invention to provide a method for controlling a carbon nanowall (CNW) structure having improved corrosion resistance against high potential by varying the spacing between the carbon nanowall walls so that its surface area and crystallinity are controlled; and to provide a carbon nanowall (CNW) with a high surface area and a carbon nanowall (CNW) with a high crystallinity both of which have a controlled structure.
The present inventors discovered that by varying the ratio between the introduction rates of process gases in the carbon nanowall (CNW) production process by plasma CVD, the spacing between the carbon nanowall (CNW) walls can be varied, which allows the structure, such as surface area and crystallinity, of the carbon nanowall to be controlled, thereby arriving at the present invention.
Specifically, first, the present invention is an invention of a carbon nanowall having a controlled structure, such as shape and physical properties, as in the following (1) to (3).
(1) A high-surface-area carbon nanowall having a wall surface area of 50 cm2/cm2-substrate= m or more. (Here, "wall surface area" is the wall surface area per unit substrate surface area per unit wall height.) For example, when the carbon nanowall is used as an electrode catalyst carrier for a fuel cell, it is preferred to have a larger surface area as the amount of supported catalyst increases. A carbon nanowall having a wall surface area of 50 cm2/cmZ-substrate= m or more is preferable, a carbon nanowall having a wall surface area of 60 cm2/cm2-substrate= m or more is more preferable, and a carbon nanowall having a wall surface area of 70 cm2/cm2-substrate= m or more is even more preferable.
(2) A carbon nanowall having a crystallinity such that the D band half value width in the Raman spectrum measured with an irradiation laser wavelength of 514.5 nm is 85 cm"1 or less.
For example, when using the carbon nanowall as an electronic material for which emphasis is placed on the magnitude of conductivity, higher crystallinity provides higher conductivity and superior corrosion resistance against high potential. Therefore, a carbon nanowall having a crystallinity such that the D band half value width in the Raman spectrum is 85 cm"1 or less is preferable, a carbon nanowall having a crystallinity such that the D band half value width in the Raman spectrum is 65 cm 1 or less is more preferable, and a carbon nanowall having a crystallinity such that the D band half value width in the Raman spectrum is 50 cm 1 or less is even more preferable.
CARBON NANOWALL WITH CONTROLLED STRUCTURE AND METHOD FOR
CONTROLLING CARBON NANOWALL STRUCTURE
Technical Field The present invention relates to a method for controlling a carbon nanowall structure, and to a novel carbon nanowall obtainable by this method which has a controlled structure, such as surface area and crystallinity.
Background Art Known examples of carbonaceous porous materials having a nano-size structure include graphite and amorphous, such as fullerene, carbon nanotubes, carbon nanohorns, and carbon nanoflakes.
Among carbonaceous porous materials having a nano-size structure, carbon nanowalls (CNW) are a two-dimensional carbon nanostructure which typically have a wall-like structure in which the walls rise upwards from the surface of a substrate in a substantially uniform direction. Fullerene (such as C60) is a zero-dimensional carbon nanostructure.
Carbon nanotubes can be considered to be a one-dimensional carbon nanostructure.
Carbon nanoflakes are an aggregate of planar, two-dimensional, small pieces similar to carbon nanowalls. Like rose petals, the individual small pieces are not connected to each other so that their carbon nanostructure has an inferior directionality with respect to the substrate to that of carbon nanowalls. Thus, carbon nanowalls have a carbon nanostructure with totally different characteristics from fullerene, carbon nanotubes, carbon nanohorns, and carbon nanoflakes.
The present inventors have already disclosed a production method and production apparatus focusing on carbon nanowalls in JP Patent Publication (Kokai) No.
2005-97113A.
Specifically, as illustrated in Figure 7, a source gas 32 containing at least carbon as a constituent element is introduced into a reaction chamber 10. The reaction chamber 10 is provided with a parallel plate capacitively coupled plasma (CCP) generating mechanism 20 which includes a first electrode 22 and a second electrode 24. In this way, electromagnetic waves such as RF waves are irradiated to form a plasma atmosphere 34 in which the source gas 32 has been turned into plasma. On the other hand, in a radical generating chamber 41 provided externally to the reaction chamber 10, a radical source gas 36 containing at least hydrogen is decomposed by RF waves or the like to generate hydrogen radicals 38. The hydrogen radicals 38 are injected into the plasma atmosphere 34, and carbon nanowalls form on the surface of a substrate 15 arranged on the second electrode 24.
Disclosure of the Invention Although the existence of carbon nanowalls (CNW) and several basic production methods thereof are known, a method for controlling a structure so as to produce the optimum shape and physical properties of a carbon nanowall (CNW) according to its use and application has until now been unclear.
Accordingly, it is an object of the present invention to provide a method for controlling a carbon nanowall (CNW) structure having improved corrosion resistance against high potential by varying the spacing between the carbon nanowall walls so that its surface area and crystallinity are controlled; and to provide a carbon nanowall (CNW) with a high surface area and a carbon nanowall (CNW) with a high crystallinity both of which have a controlled structure.
The present inventors discovered that by varying the ratio between the introduction rates of process gases in the carbon nanowall (CNW) production process by plasma CVD, the spacing between the carbon nanowall (CNW) walls can be varied, which allows the structure, such as surface area and crystallinity, of the carbon nanowall to be controlled, thereby arriving at the present invention.
Specifically, first, the present invention is an invention of a carbon nanowall having a controlled structure, such as shape and physical properties, as in the following (1) to (3).
(1) A high-surface-area carbon nanowall having a wall surface area of 50 cm2/cm2-substrate= m or more. (Here, "wall surface area" is the wall surface area per unit substrate surface area per unit wall height.) For example, when the carbon nanowall is used as an electrode catalyst carrier for a fuel cell, it is preferred to have a larger surface area as the amount of supported catalyst increases. A carbon nanowall having a wall surface area of 50 cm2/cmZ-substrate= m or more is preferable, a carbon nanowall having a wall surface area of 60 cm2/cm2-substrate= m or more is more preferable, and a carbon nanowall having a wall surface area of 70 cm2/cm2-substrate= m or more is even more preferable.
(2) A carbon nanowall having a crystallinity such that the D band half value width in the Raman spectrum measured with an irradiation laser wavelength of 514.5 nm is 85 cm"1 or less.
For example, when using the carbon nanowall as an electronic material for which emphasis is placed on the magnitude of conductivity, higher crystallinity provides higher conductivity and superior corrosion resistance against high potential. Therefore, a carbon nanowall having a crystallinity such that the D band half value width in the Raman spectrum is 85 cm"1 or less is preferable, a carbon nanowall having a crystallinity such that the D band half value width in the Raman spectrum is 65 cm 1 or less is more preferable, and a carbon nanowall having a crystallinity such that the D band half value width in the Raman spectrum is 50 cm 1 or less is even more preferable.
(3) A carbon nanowall which combines high surface area and high crystallinity, having not only a wall surface area of 50 cmZ/cm2-substrate= m or more but also a crystallinity such that the D-band half value width in the Raman spectrum measured with an irradiation laser wavelength of 514.5 nm is 85 cm 1 or less. This carbon nanowall has an increased amount of supported catalyst because of its large surface area, and has high conductivity and excellent corrosion resistance against high potential because of its high crystallinity, and is thus especially suitable as an electrode catalyst carrier for a fuel cell.
Second, the present invention is an invention of a method for controlling a carbon nanowall structure having a controlled structural shape and physical properties such as surface area and crystallinity, wherein, in a method for producing a carbon nanowall by forming in at least a part of a reaction chamber a plasma atmosphere in which a carbon source gas having at least carbon as a constituent element has been turned into plasma, injecting into the plasma atmosphere hydrogen radicals generated externally to the atmosphere from H2 gas, and forming a carbon nanowall on a surface of a substrate provided in the reaction chamber by reacting the plasma and the hydrogen radicals, a ratio between introduction rates of the H2 gas and the carbon source gas as a design factor controls the surface area and/or crystallinity of the produced carbon nanowall.
It is noted that the absolute value of the wall surface area is determined by the ratio between the introduction rates of the H2 gas and the carbon source gas (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol)), which is a design factor in the present invention, as well as by the values of other design factors. However, in the present specification, the ratio between the introduction rates is discussed with a substrate temperature of 970 C, chamber internal pressure of 800 mTorr, substrate material made of silicon, and a plasma generating source power of 13.56 MHz and 100 W as such other design factors.
Here, the design factor which is the ratio between the introduction rates of the H2 gas and the carbon source gas (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol) can be varied over a broad range according to the shape and physical properties, such as surface area and crystallinity, of the desired carbon nanowall. Generally, although the ratio between the introduction rates of the H2 gas and the carbon source gas (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol)) can be varied by up to about 0.5 to 3, practically a carbon nanowall can be formed when this ratio is 1 to 2.5.
Specifically, by setting the ratio between the introduction rates of the H2 gas and the carbon source gas (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol)) to 1.8 or less, a carbon nanowall can be formed having a wall surface area of 50 cm2/cm2-substrate= m or more. By setting the ratio between the introduction rates of the H2 gas and the carbon source gas (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol)) to 1.4 or less, a carbon nanowall can be formed having a surface area of 60 cm2/cm2-substrate= m or more, and by setting the ratio between the introduction rates of the H2 gas and the carbon source gas (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol)) to 1.0 or less, a carbon nanowall can be formed having a surface area of 70 cm2/cm2-substrate= m or more.
Second, the present invention is an invention of a method for controlling a carbon nanowall structure having a controlled structural shape and physical properties such as surface area and crystallinity, wherein, in a method for producing a carbon nanowall by forming in at least a part of a reaction chamber a plasma atmosphere in which a carbon source gas having at least carbon as a constituent element has been turned into plasma, injecting into the plasma atmosphere hydrogen radicals generated externally to the atmosphere from H2 gas, and forming a carbon nanowall on a surface of a substrate provided in the reaction chamber by reacting the plasma and the hydrogen radicals, a ratio between introduction rates of the H2 gas and the carbon source gas as a design factor controls the surface area and/or crystallinity of the produced carbon nanowall.
It is noted that the absolute value of the wall surface area is determined by the ratio between the introduction rates of the H2 gas and the carbon source gas (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol)), which is a design factor in the present invention, as well as by the values of other design factors. However, in the present specification, the ratio between the introduction rates is discussed with a substrate temperature of 970 C, chamber internal pressure of 800 mTorr, substrate material made of silicon, and a plasma generating source power of 13.56 MHz and 100 W as such other design factors.
Here, the design factor which is the ratio between the introduction rates of the H2 gas and the carbon source gas (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol) can be varied over a broad range according to the shape and physical properties, such as surface area and crystallinity, of the desired carbon nanowall. Generally, although the ratio between the introduction rates of the H2 gas and the carbon source gas (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol)) can be varied by up to about 0.5 to 3, practically a carbon nanowall can be formed when this ratio is 1 to 2.5.
Specifically, by setting the ratio between the introduction rates of the H2 gas and the carbon source gas (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol)) to 1.8 or less, a carbon nanowall can be formed having a wall surface area of 50 cm2/cm2-substrate= m or more. By setting the ratio between the introduction rates of the H2 gas and the carbon source gas (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol)) to 1.4 or less, a carbon nanowall can be formed having a surface area of 60 cm2/cm2-substrate= m or more, and by setting the ratio between the introduction rates of the H2 gas and the carbon source gas (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol)) to 1.0 or less, a carbon nanowall can be formed having a surface area of 70 cm2/cm2-substrate= m or more.
Further, by setting the H2 gas introduction rate at a 2.5 sccm/cm2-parallel plate electrode surface area or more, a carbon nanowall can be formed having a crystallinity such that the D band half value width in the Raman spectrum is 85 cm"1 or less; by setting the H2 gas introduction rate to a 4.2 sccm/cm2-parallel plate electrode surface area or more, a carbon nanowall can be formed having a crystallinity such that the D band half value width in the Raman spectrum is 65 cm"1 or less, and by setting the H2 gas introduction rate to 5.8 sccm/cm2-parallel plate electrode surface area or more, a carbon nanowall can be formed having a crystallinity such that the D band half value width in the Raman spectrum is 50 cm"1 or less.
In the present invention, examples of methods for generating the hydrogen radicals from the H2 gas include irradiating one or more selected from microwaves, UHF
waves, VHF
waves, and RF waves on the H2 gas, and causing the 1-12 gas to come into contact with a heated catalyst metal.
In the present invention, examples of the starting material for the carbon source gas include compounds having at least carbon and hydrogen as constituent elements and compounds having at least carbon and fluorine as constituent elements.
Third, the present invention is a catalyst layer for a fuel cell, characterized in that a carrier for the catalyst layer is the above-described carbon nanowall having a controlled structure, and that a catalyst component and/or electrolyte component is supported/dispersed on the carrier for the catalyst layer composed of the carbon nanowall. By using a carbon nanowall having both a high surface area and high crystallinity as the electrode catalyst carrier for a fuel cell, such an electrode catalyst carrier has an increased amount of supported catalyst because of the large surface area of the carbon nanowall, and has high conductivity and excellent corrosion resistance against high potential because of the high crystallinity of the carbon nanowall, and is thus especially suitable as an electrode catalyst carrier for a fuel cell.
By varying the ratio between the introduction rates of the process gases in a carbon nanowall (CNW) production process by plasma CVD, the spacing between the carbon nanowall (CNW) walls can be varied, which allows the surface area and crystallinity to be controlled. The carbon nanowall according to the present invention has an increased amount of supported catalyst because of its large surface area, as well as high conductivity and excellent corrosion resistance against high potential because of its high crystallinity, and is thus especially suitable as an electrode catalyst carrier for a fuel cell.
Brief Description of the Drawings Figure 1 illustrates a schematic view of one example of an apparatus for forming a carbon nanowall having a controlled structure according to the present invention.
Figure 2 illustrates a schematic view of an apparatus for forming the carbon nanowall used in the examples.
Figure 3 illustrates the relationship between the ratio between the introduction rates of the hydrogen gas (HZ) and the carbon source gas (C2F6) and the wall surface area of the grown carbon nanowall.
Figure 4 shows a surface SEM photographic image of a carbon nanowall when H2 introduction rate/C2F6 introduction rate = 2.
Figure 5 shows a surface SEM photographic image of a carbon nanowall when H2 introduction rate/C2F6 introduction rate = 1.
Figure 6 illustrates the relationship between the hydrogen gas (H2) introduction rate and the crystallinity of the carbon nanowall as determined from Raman spectroscopy.
Figure 7 illustrates one example of a carbon nanowall control apparatus.
The reference numerals in the drawings are as follows:
I Plasma CVD apparatus 2 Silicon (Si substrate 3 Heater inside the chamber 4 Plate electrode parallel to the substrate 2 Carbon source gas inlet tube 6 hydrogen gas (HZ) inlet tube 7 Plasma generating source 8 Inductive plasma generating source 9 High frequency power apparatus Reaction chamber Carbon source gas inlet tube Plasma discharge means 22 First electrode 24 Second electrode 32 Source gas (raw material) 34 Plasma atmosphere 36 Radical source gas (radical source material) 38 Radical 41 Radical generating chamber Best Mode for Carrying Out the Invention Figure 1 illustrates a schematic view of one example of an apparatus for forming a carbon nanowall having a controlled structure according to the present invention. Hydrogen radicals as well as a reaction gas (carbon source gas) containing carbon, such as CF4, C2F6, or CH4, are introduced between parallel plate electrodes in the chamber illustrated in Figure 1.
A carbon nanowall is then formed by PECVD (plasma enhanced chemical vapor deposition).
At this stage, the substrate may be heated to approximately 500 C or more. The distance between the parallel plate electrodes is about 5 cm. Between the plate electrodes, a capacitively coupled plasma is generated using a 13.56 MHz high frequency power apparatus with a power of 100 W. The hydrogen radical generation site is a quartz tube with a length of 200 mm and an internal diameter [cp] of 26 mm. H2 gas is introduced into the quartz tube to produce an inductively coupled plasma using a 13.56 MHz high frequency power apparatus with a power of 400 W. The flow rate of the carbon source gas and the H2 gas may be appropriately varied. The chamber internal pressure is, for example, 100 mTorr. However, this apparatus is merely one example, and the above description is not to be taken as limiting the experimental conditions, equipment, or the results.
Example 1 Using the plasma CVD apparatus 1 illustrated in Figure 2, a substrate 2 formed by silicon (Si) was placed on a heater 3 inside the chamber. The carbon source gas (C2F6) was introduced from an inlet tube 5 and hydrogen gas (H2) was introduced from a separate inlet tube 6 between a plate electrode 4 and the substrate 2 which are parallel to each other. At this stage, the temperature of the heater was set to 970 C.
Capacitively coupled plasma was generated between the plate electrode 4 and the substrate 2 with the distance between the plate electrode 4 and the substrate 2 set to 5 cm and the output power of the plasma generating source 7 set at 13.56 MHz and 100 W.
Further, inductively coupled plasma was generated in the inlet tube 6 by an inductive plasma generating source 8. The power of the high frequency power apparatus 9 at this stage was 13.56 MHz and 400 W. The surface area of the parallel plate electrode was 19.625 cmz ((p 50).
A CNW was grown on the substrate 2 by a plasma CVD method under the above conditions. The growing was carried out with a carbon source gas flow rate of 50 sccm, and a hydrogen gas flow rate divided into 4 levels of 50 (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol) = 1), 70 (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol) = 1.4), 100 (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol) = 2), and 125 sccm (HZ gas introduction rate (mol)/carbon source gas introduction rate (mol) = 2.5).
At this stage, the pressure in the chamber was set to 800 mTorr. Carbon nanowalls grown for 30 minutes in this system had a height of about 300 to 750 nm, and a wall thickness of10to50nm.
Figure 3 illustrates the relationship between the ratio between the introduction rates of the hydrogen gas (H2) and the carbon source gas (C2F6) and the wall surface area of the grown carbon nanowall. Figure 4 shows a surface SEM photographic image of a carbon nanowall when H2 introduction rate/C2F6 introduction rate = 2. Figure 5 shows a surface SEM
photographic image of a carbon nanowall when H2 introduction rate/C2F6 introduction rate = 1.
From the results of Figures 3 to 5, it can be seen that as the ratio between the introduction rates of the hydrogen gas and the carbon source gas (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol)) decreases, wall spacing is decreased and surface area is increased.
Example 2 The fact that crystallinity could also be independently controlled was verified using the same CVD process as that of Example 1 while varying the introduction rate of H2 gas.
Figure 6 illustrates the relationship between the hydrogen gas (H2) introduction rate and the crystallinity of the carbon nanowall as determined from Raman spectroscopy. The degree of crystallinity was approximated by using as an index the D band half value width in the Raman spectrum measured with an irradiation laser wavelength of 514.5 nm.
Crystallinity increases as D band half value width decreases. Specifically, by decreasing the H2 introduction rate, the crystallinity of the carbon nanowall can be increased.
In Figure 6, for reference the D band half value width of the conventional carrier Ketjen black and the D band half value width of graphite were also added. It can be seen that even a carbon nanowall can be made to have a high crystallinity equal to or higher than that of Ketjen black.
Industrial Applicability The carbon nanowall according to the present invention has an increased amount of supported catalyst because of its large surface area, and has high conductivity and excellent corrosion resistance against high potential because of its high crystallinity.
This carbon nanowall is thus especially suitable as an electrode catalyst carrier for a fuel cell.
Accordingly, this carbon nanowall will contribute to the practical use and spread of fuel cells.
In the present invention, examples of methods for generating the hydrogen radicals from the H2 gas include irradiating one or more selected from microwaves, UHF
waves, VHF
waves, and RF waves on the H2 gas, and causing the 1-12 gas to come into contact with a heated catalyst metal.
In the present invention, examples of the starting material for the carbon source gas include compounds having at least carbon and hydrogen as constituent elements and compounds having at least carbon and fluorine as constituent elements.
Third, the present invention is a catalyst layer for a fuel cell, characterized in that a carrier for the catalyst layer is the above-described carbon nanowall having a controlled structure, and that a catalyst component and/or electrolyte component is supported/dispersed on the carrier for the catalyst layer composed of the carbon nanowall. By using a carbon nanowall having both a high surface area and high crystallinity as the electrode catalyst carrier for a fuel cell, such an electrode catalyst carrier has an increased amount of supported catalyst because of the large surface area of the carbon nanowall, and has high conductivity and excellent corrosion resistance against high potential because of the high crystallinity of the carbon nanowall, and is thus especially suitable as an electrode catalyst carrier for a fuel cell.
By varying the ratio between the introduction rates of the process gases in a carbon nanowall (CNW) production process by plasma CVD, the spacing between the carbon nanowall (CNW) walls can be varied, which allows the surface area and crystallinity to be controlled. The carbon nanowall according to the present invention has an increased amount of supported catalyst because of its large surface area, as well as high conductivity and excellent corrosion resistance against high potential because of its high crystallinity, and is thus especially suitable as an electrode catalyst carrier for a fuel cell.
Brief Description of the Drawings Figure 1 illustrates a schematic view of one example of an apparatus for forming a carbon nanowall having a controlled structure according to the present invention.
Figure 2 illustrates a schematic view of an apparatus for forming the carbon nanowall used in the examples.
Figure 3 illustrates the relationship between the ratio between the introduction rates of the hydrogen gas (HZ) and the carbon source gas (C2F6) and the wall surface area of the grown carbon nanowall.
Figure 4 shows a surface SEM photographic image of a carbon nanowall when H2 introduction rate/C2F6 introduction rate = 2.
Figure 5 shows a surface SEM photographic image of a carbon nanowall when H2 introduction rate/C2F6 introduction rate = 1.
Figure 6 illustrates the relationship between the hydrogen gas (H2) introduction rate and the crystallinity of the carbon nanowall as determined from Raman spectroscopy.
Figure 7 illustrates one example of a carbon nanowall control apparatus.
The reference numerals in the drawings are as follows:
I Plasma CVD apparatus 2 Silicon (Si substrate 3 Heater inside the chamber 4 Plate electrode parallel to the substrate 2 Carbon source gas inlet tube 6 hydrogen gas (HZ) inlet tube 7 Plasma generating source 8 Inductive plasma generating source 9 High frequency power apparatus Reaction chamber Carbon source gas inlet tube Plasma discharge means 22 First electrode 24 Second electrode 32 Source gas (raw material) 34 Plasma atmosphere 36 Radical source gas (radical source material) 38 Radical 41 Radical generating chamber Best Mode for Carrying Out the Invention Figure 1 illustrates a schematic view of one example of an apparatus for forming a carbon nanowall having a controlled structure according to the present invention. Hydrogen radicals as well as a reaction gas (carbon source gas) containing carbon, such as CF4, C2F6, or CH4, are introduced between parallel plate electrodes in the chamber illustrated in Figure 1.
A carbon nanowall is then formed by PECVD (plasma enhanced chemical vapor deposition).
At this stage, the substrate may be heated to approximately 500 C or more. The distance between the parallel plate electrodes is about 5 cm. Between the plate electrodes, a capacitively coupled plasma is generated using a 13.56 MHz high frequency power apparatus with a power of 100 W. The hydrogen radical generation site is a quartz tube with a length of 200 mm and an internal diameter [cp] of 26 mm. H2 gas is introduced into the quartz tube to produce an inductively coupled plasma using a 13.56 MHz high frequency power apparatus with a power of 400 W. The flow rate of the carbon source gas and the H2 gas may be appropriately varied. The chamber internal pressure is, for example, 100 mTorr. However, this apparatus is merely one example, and the above description is not to be taken as limiting the experimental conditions, equipment, or the results.
Example 1 Using the plasma CVD apparatus 1 illustrated in Figure 2, a substrate 2 formed by silicon (Si) was placed on a heater 3 inside the chamber. The carbon source gas (C2F6) was introduced from an inlet tube 5 and hydrogen gas (H2) was introduced from a separate inlet tube 6 between a plate electrode 4 and the substrate 2 which are parallel to each other. At this stage, the temperature of the heater was set to 970 C.
Capacitively coupled plasma was generated between the plate electrode 4 and the substrate 2 with the distance between the plate electrode 4 and the substrate 2 set to 5 cm and the output power of the plasma generating source 7 set at 13.56 MHz and 100 W.
Further, inductively coupled plasma was generated in the inlet tube 6 by an inductive plasma generating source 8. The power of the high frequency power apparatus 9 at this stage was 13.56 MHz and 400 W. The surface area of the parallel plate electrode was 19.625 cmz ((p 50).
A CNW was grown on the substrate 2 by a plasma CVD method under the above conditions. The growing was carried out with a carbon source gas flow rate of 50 sccm, and a hydrogen gas flow rate divided into 4 levels of 50 (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol) = 1), 70 (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol) = 1.4), 100 (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol) = 2), and 125 sccm (HZ gas introduction rate (mol)/carbon source gas introduction rate (mol) = 2.5).
At this stage, the pressure in the chamber was set to 800 mTorr. Carbon nanowalls grown for 30 minutes in this system had a height of about 300 to 750 nm, and a wall thickness of10to50nm.
Figure 3 illustrates the relationship between the ratio between the introduction rates of the hydrogen gas (H2) and the carbon source gas (C2F6) and the wall surface area of the grown carbon nanowall. Figure 4 shows a surface SEM photographic image of a carbon nanowall when H2 introduction rate/C2F6 introduction rate = 2. Figure 5 shows a surface SEM
photographic image of a carbon nanowall when H2 introduction rate/C2F6 introduction rate = 1.
From the results of Figures 3 to 5, it can be seen that as the ratio between the introduction rates of the hydrogen gas and the carbon source gas (H2 gas introduction rate (mol)/carbon source gas introduction rate (mol)) decreases, wall spacing is decreased and surface area is increased.
Example 2 The fact that crystallinity could also be independently controlled was verified using the same CVD process as that of Example 1 while varying the introduction rate of H2 gas.
Figure 6 illustrates the relationship between the hydrogen gas (H2) introduction rate and the crystallinity of the carbon nanowall as determined from Raman spectroscopy. The degree of crystallinity was approximated by using as an index the D band half value width in the Raman spectrum measured with an irradiation laser wavelength of 514.5 nm.
Crystallinity increases as D band half value width decreases. Specifically, by decreasing the H2 introduction rate, the crystallinity of the carbon nanowall can be increased.
In Figure 6, for reference the D band half value width of the conventional carrier Ketjen black and the D band half value width of graphite were also added. It can be seen that even a carbon nanowall can be made to have a high crystallinity equal to or higher than that of Ketjen black.
Industrial Applicability The carbon nanowall according to the present invention has an increased amount of supported catalyst because of its large surface area, and has high conductivity and excellent corrosion resistance against high potential because of its high crystallinity.
This carbon nanowall is thus especially suitable as an electrode catalyst carrier for a fuel cell.
Accordingly, this carbon nanowall will contribute to the practical use and spread of fuel cells.
Claims (6)
1. A carbon nanowall, characterized by having a wall surface area of 50 cm2/cm2-substrate-µm or more and a crystallinity such that the D-band half value width in the Raman spectrum measured with an irradiation laser wavelength of 514.5 nm is 85 cm-1 or less.
2. A method for controlling a carbon nanowall structure in a method for producing a carbon nanowall by forming in at least a part of a reaction chamber a plasma atmosphere in which a carbon source gas having at least carbon as a constituent element is turned into plasma, injecting into the plasma atmosphere hydrogen radicals generated externally to the atmosphere from H2 gas, and forming a carbon nanowall on a surface of a substrate provided in the reaction chamber by reacting the plasma and the hydrogen radicals, wherein a ratio between introduction rates of the H2 gas and the carbon source gas is in a range between 0.5 and 1.8 and the H2 gas introduction rate is set at 2.5 sccm/cm2-parallel plate electrode surface area or more so as to control the surface area of the produced carbon nanowall to be 50 cm2/cm2-substrate-µm or more, and the crystallinity of the produced carbon nanowall to be such that the D-band half value width in the Raman spectrum measured with an irradiation laser wavelength of 514.5 nm is 85 cm-1 or less.
3. The method for controlling a carbon nanowall structure according to claim 2, characterized by generating the hydrogen radicals from the H2 gas by irradiating one or more selected from microwaves, UHF waves, VHF waves, and RF waves on the H2 gas, or causing the H2 gas to come into contact with a heated catalyst metal.
4. The method for controlling a carbon nanowall structure according to claim 2 or 3, wherein the carbon source gas has at least carbon and hydrogen as constituent elements.
5. The method for controlling carbon nanowall structure according to any of claims 2 to 4, wherein the carbon source gas has at least carbon and fluorine as constituent elements.
6. A catalyst layer for a fuel cell, wherein a carrier for the catalyst layer is the carbon nanowall according to claim 1 and that a catalyst component is or a catalyst component and electrolyte component are supported/dispersed on the carrier for the catalyst layer composed of the carbon nanowall.
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| JP2006-201927 | 2006-07-25 | ||
| JP2006201927A JP4662067B2 (en) | 2006-07-25 | 2006-07-25 | Structure-controlled carbon nanowall and structure control method of carbon nanowall |
| PCT/JP2007/065036 WO2008013309A1 (en) | 2006-07-25 | 2007-07-25 | Carbon nanowall with controlled structure and method of controlling structure of carbon nanowall |
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| EP (1) | EP2048113B1 (en) |
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| JP5001995B2 (en) | 2009-11-11 | 2012-08-15 | トヨタ自動車株式会社 | Positive electrode for lithium secondary battery and method for producing the same |
| JP5130275B2 (en) | 2009-11-11 | 2013-01-30 | トヨタ自動車株式会社 | Negative electrode for lithium secondary battery and method for producing the same |
| JP2012041249A (en) * | 2010-08-23 | 2012-03-01 | Nagoya Univ | Manufacturing method for carbon nanostructure |
| JP5886547B2 (en) * | 2011-07-05 | 2016-03-16 | 学校法人中部大学 | Carbon nanowall array and method for producing carbon nanowall |
| JP5834720B2 (en) * | 2011-09-30 | 2015-12-24 | 三菱マテリアル株式会社 | Carbon nanofiber production method and carbon nanofiber dispersion |
| JP5971840B2 (en) * | 2012-02-20 | 2016-08-17 | 株式会社Ihi | Nitrogen introduction method |
| CN103420356A (en) * | 2012-05-22 | 2013-12-04 | 海洋王照明科技股份有限公司 | Method for preparing carbon nanometer walls under normal pressure |
| CN103833022B (en) * | 2012-11-27 | 2016-01-13 | 海洋王照明科技股份有限公司 | Graphene nanobelt and preparation method thereof |
| CN103832999B (en) * | 2012-11-27 | 2015-12-02 | 海洋王照明科技股份有限公司 | Carbon nanometer wall and prepared the method for graphene nanobelt by it |
| CN103879987B (en) * | 2012-12-20 | 2016-01-13 | 海洋王照明科技股份有限公司 | The preparation method of graphene nanobelt |
| CN103879989B (en) * | 2012-12-20 | 2016-01-13 | 海洋王照明科技股份有限公司 | The preparation method of nitrogen-doped graphene nano belt |
| CN103879988A (en) * | 2012-12-20 | 2014-06-25 | 海洋王照明科技股份有限公司 | Boron-doped graphene nano-belt preparation method |
| CN103935981B (en) * | 2013-01-18 | 2016-04-13 | 海洋王照明科技股份有限公司 | Graphene nanobelt and preparation method thereof |
| JP6039534B2 (en) | 2013-11-13 | 2016-12-07 | 東京エレクトロン株式会社 | Carbon nanotube generation method and wiring formation method |
| CA2948832A1 (en) * | 2014-05-13 | 2015-11-19 | Microbial Discovery Group, Llc | Direct-fed microbials and methods of their use |
| CN109250708B (en) * | 2018-12-07 | 2021-01-22 | 四川聚创石墨烯科技有限公司 | System for optical microwave reduction of graphene oxide |
| JP7274747B2 (en) * | 2019-12-20 | 2023-05-17 | 国立大学法人東海国立大学機構 | Manufacturing method of carbon nanowall |
| WO2021201199A1 (en) * | 2020-04-01 | 2021-10-07 | 国立大学法人東海国立大学機構 | Power storage device and electrode for power storage device |
| IT202100017024A1 (en) | 2021-06-29 | 2022-12-29 | Pierfrancesco Atanasio | Carbon/active material hybrid electrodes for lithium ion batteries |
| CN113582162B (en) * | 2021-08-27 | 2023-06-30 | 西安应用光学研究所 | High-optical-absorption carbon nanomaterial and preparation method thereof |
| CN118943377B (en) * | 2024-07-18 | 2025-05-06 | 江阴纳力新材料科技有限公司 | Composite current collector, pole piece and secondary battery using the same |
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| US7511415B2 (en) * | 2004-08-26 | 2009-03-31 | Dialight Japan Co., Ltd. | Backlight for liquid crystal display device |
| JP2005097113A (en) * | 2004-11-26 | 2005-04-14 | Mineo Hiramatsu | Carbon nanowall manufacturing method and manufacturing apparatus |
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| JP2008024570A (en) | 2008-02-07 |
| EP2048113A1 (en) | 2009-04-15 |
| US20100009242A1 (en) | 2010-01-14 |
| CA2654430A1 (en) | 2008-01-31 |
| CN101489926A (en) | 2009-07-22 |
| EP2048113B1 (en) | 2014-02-26 |
| WO2008013309A1 (en) | 2008-01-31 |
| EP2048113A4 (en) | 2010-03-17 |
| JP4662067B2 (en) | 2011-03-30 |
| CN101489926B (en) | 2013-05-15 |
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