CA2344320A1 - Detecteur infrarouge a puits quantique pour temperature ambiante - Google Patents
Detecteur infrarouge a puits quantique pour temperature ambiante Download PDFInfo
- Publication number
- CA2344320A1 CA2344320A1 CA 2344320 CA2344320A CA2344320A1 CA 2344320 A1 CA2344320 A1 CA 2344320A1 CA 2344320 CA2344320 CA 2344320 CA 2344320 A CA2344320 A CA 2344320A CA 2344320 A1 CA2344320 A1 CA 2344320A1
- Authority
- CA
- Canada
- Prior art keywords
- quantum well
- infrared photodetector
- photodetector according
- doped
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000010521 absorption reaction Methods 0.000 claims abstract description 24
- 230000005855 radiation Effects 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims 3
- 238000001914 filtration Methods 0.000 claims 1
- 238000013461 design Methods 0.000 abstract description 7
- 230000005641 tunneling Effects 0.000 description 9
- 238000001514 detection method Methods 0.000 description 6
- 230000005281 excited state Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 230000005283 ground state Effects 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000001931 thermography Methods 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- RZVHIXYEVGDQDX-UHFFFAOYSA-N 9,10-anthraquinone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C(=O)C2=C1 RZVHIXYEVGDQDX-UHFFFAOYSA-N 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000010626 work up procedure Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA 2344320 CA2344320A1 (fr) | 2001-04-18 | 2001-04-18 | Detecteur infrarouge a puits quantique pour temperature ambiante |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA 2344320 CA2344320A1 (fr) | 2001-04-18 | 2001-04-18 | Detecteur infrarouge a puits quantique pour temperature ambiante |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2344320A1 true CA2344320A1 (fr) | 2002-10-18 |
Family
ID=4168848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA 2344320 Abandoned CA2344320A1 (fr) | 2001-04-18 | 2001-04-18 | Detecteur infrarouge a puits quantique pour temperature ambiante |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA2344320A1 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113130682A (zh) * | 2021-04-13 | 2021-07-16 | 清华大学 | 内含调制掺杂局域电场的半导体红外探测器及其调控方法 |
| WO2021198839A1 (fr) * | 2020-03-31 | 2021-10-07 | National Research Council Of Canada | Systèmes d'imagerie infrarouge à courte portée |
-
2001
- 2001-04-18 CA CA 2344320 patent/CA2344320A1/fr not_active Abandoned
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021198839A1 (fr) * | 2020-03-31 | 2021-10-07 | National Research Council Of Canada | Systèmes d'imagerie infrarouge à courte portée |
| CN113130682A (zh) * | 2021-04-13 | 2021-07-16 | 清华大学 | 内含调制掺杂局域电场的半导体红外探测器及其调控方法 |
| CN113130682B (zh) * | 2021-04-13 | 2022-10-11 | 清华大学 | 内含调制掺杂局域电场的半导体红外探测器及其调控方法 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Dead |