Connect public, paid and private patent data with Google Patents Public Datasets

Optical devices with electron-beam evaporated multilayer mirror

Info

Publication number
CA2083122A1
CA2083122A1 CA 2083122 CA2083122A CA2083122A1 CA 2083122 A1 CA2083122 A1 CA 2083122A1 CA 2083122 CA2083122 CA 2083122 CA 2083122 A CA2083122 A CA 2083122A CA 2083122 A1 CA2083122 A1 CA 2083122A1
Authority
CA
Grant status
Application
Patent type
Prior art keywords
refraction
layer
index
mirror
zns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA 2083122
Other languages
French (fr)
Other versions
CA2083122C (en )
Inventor
Dennis Glenn Deppe
Niloy Kumar Dutta
Erdmann Frederick Schubert
Li-Wei Tu
George John Zydzik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Dennis Glenn Deppe
Niloy Kumar Dutta
Erdmann Frederick Schubert
Li-Wei Tu
George John Zydzik
American Telephone And Telegraph Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting lasers (SE-lasers)
    • H01S5/183Surface-emitting lasers (SE-lasers) having a vertical cavity (VCSE-lasers)
    • H01S5/18361Structure of the reflectors, e.g. hybrid mirrors

Abstract

This invention embodies a Vertical Cavity Surface Emitting Laser with a top mirror comprising at least one pair of quarterwave layers, each pair consisting of a low index of refraction layer and a high index of refraction layer, the high index of refraction layer being a semiconductor chosen from GaP and ZnS and the low index of refraction layer being chosen from borosilicate glass (BSG) CaF2, MgF2 and NaF. Especially useful in vertical cavity surface emitting lasers are mirrors formed by a stack of a plurality of pairs of GaP/BSG or ZnS/CdF2. Such mirrors have a high reflectivity characteristics required for an efficient operation of the laser. The GaP/BSG or ZnS/CaF2 mirror structure represents a considerable improvement over previous designs for VCSELs in terms of ultimate reflectivity, low loss, and post growth processing compatibility.
CA 2083122 1991-12-27 1992-11-17 Optical devices with electron-beam evaporated multilayer mirror Expired - Fee Related CA2083122C (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US815,311 1991-12-27
US07815311 US5206871A (en) 1991-12-27 1991-12-27 Optical devices with electron-beam evaporated multilayer mirror

Publications (2)

Publication Number Publication Date
CA2083122A1 true true CA2083122A1 (en) 1993-06-28
CA2083122C CA2083122C (en) 1997-05-13

Family

ID=25217423

Family Applications (1)

Application Number Title Priority Date Filing Date
CA 2083122 Expired - Fee Related CA2083122C (en) 1991-12-27 1992-11-17 Optical devices with electron-beam evaporated multilayer mirror

Country Status (6)

Country Link
US (1) US5206871A (en)
JP (1) JPH05251819A (en)
KR (1) KR0147857B1 (en)
CA (1) CA2083122C (en)
DE (2) DE69209630D1 (en)
EP (1) EP0549167B1 (en)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5408105A (en) * 1992-02-19 1995-04-18 Matsushita Electric Industrial Co., Ltd. Optoelectronic semiconductor device with mesa
US5256596A (en) * 1992-03-26 1993-10-26 Motorola, Inc. Top emitting VCSEL with implant
US5258316A (en) * 1992-03-26 1993-11-02 Motorola, Inc. Patterened mirror vertical cavity surface emitting laser
US5513202A (en) * 1994-02-25 1996-04-30 Matsushita Electric Industrial Co., Ltd. Vertical-cavity surface-emitting semiconductor laser
US5557626A (en) * 1994-06-15 1996-09-17 Motorola Patterned mirror VCSEL with adjustable selective etch region
JP2891133B2 (en) * 1994-10-24 1999-05-17 日本電気株式会社 A surface emitting laser and a surface emitting laser array, and an optical information processing apparatus
US5654228A (en) * 1995-03-17 1997-08-05 Motorola VCSEL having a self-aligned heat sink and method of making
JPH0945963A (en) * 1995-07-31 1997-02-14 Eiko Eng:Kk Gan based semiconductor device
DE69610610T2 (en) * 1995-12-26 2001-05-03 Nippon Telegraph & Telephone Surface emitting laser of vertical cavity and process for its preparation
US6169756B1 (en) * 1997-12-23 2001-01-02 Lucent Technologies Inc. Vertical cavity surface-emitting laser with optical guide and current aperture
US6044100A (en) * 1997-12-23 2000-03-28 Lucent Technologies Inc. Lateral injection VCSEL
US6208680B1 (en) 1997-12-23 2001-03-27 Lucent Technologies Inc. Optical devices having ZNS/CA-MG-fluoride multi-layered mirrors
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6117699A (en) * 1998-04-10 2000-09-12 Hewlett-Packard Company Monolithic multiple wavelength VCSEL array
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6614821B1 (en) * 1999-08-04 2003-09-02 Ricoh Company, Ltd. Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
NL1015714C2 (en) * 2000-07-14 2002-01-15 Dsm Nv A process for the crystallization of enantiomerically-enriched 2-acetylthio-3-phenylpropionic acid.
US6724796B2 (en) * 2000-12-06 2004-04-20 Applied Optoelectronics, Inc. Modified distributed bragg reflector (DBR) for vertical cavity surface-emitting laser (VCSEL) resonant wavelength tuning sensitivity control
US6696307B2 (en) 2000-12-06 2004-02-24 Applied Optoelectronics, Inc. Patterned phase shift layers for wavelength-selectable vertical cavity surface-emitting laser (VCSEL) arrays
US6636544B2 (en) 2000-12-06 2003-10-21 Applied Optoelectronics, Inc. Overlapping wavelength-tunable vertical cavity surface-emitting laser (VCSEL) arrays
EP1298461A1 (en) * 2001-09-27 2003-04-02 Interuniversitair Microelektronica Centrum Vzw Distributed Bragg reflector comprising GaP and a semiconductor resonant cavity device comprising such DBR
DE10208171A1 (en) * 2002-02-26 2003-09-18 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component with a vertical emission direction, and manufacturing method thereof
US6897131B2 (en) * 2002-09-20 2005-05-24 Applied Materials, Inc. Advances in spike anneal processes for ultra shallow junctions
DE10244447B4 (en) * 2002-09-24 2006-06-14 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component with a vertical emission direction, and manufacturing method thereof
US6839507B2 (en) * 2002-10-07 2005-01-04 Applied Materials, Inc. Black reflector plate
US7126160B2 (en) * 2004-06-18 2006-10-24 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
US7119377B2 (en) * 2004-06-18 2006-10-10 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
US7627017B2 (en) * 2006-08-25 2009-12-01 Stc. Unm Laser amplifier and method of making the same
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1382401A (en) * 1973-02-13 1975-01-29 Inst Poluprovodnikov Solid state laser
US3984581A (en) * 1973-02-28 1976-10-05 Carl Zeiss-Stiftung Method for the production of anti-reflection coatings on optical elements made of transparent organic polymers
JPH0423633B2 (en) * 1983-09-19 1992-04-22 Toyoda Chuo Kenkyusho Kk
JPS6179280A (en) * 1984-09-27 1986-04-22 Agency Of Ind Science & Technol Surface light-emitting type semiconductor laser device and manufacture thereof
JPS63245984A (en) * 1987-04-01 1988-10-13 Seiko Epson Corp Semiconductor light emitting element and manufacture thereof
US5018157A (en) * 1990-01-30 1991-05-21 At&T Bell Laboratories Vertical cavity semiconductor lasers
US5068868A (en) * 1990-05-21 1991-11-26 At&T Bell Laboratories Vertical cavity surface emitting lasers with electrically conducting mirrors

Also Published As

Publication number Publication date Type
DE69209630T2 (en) 1996-08-22 grant
DE69209630D1 (en) 1996-05-09 grant
EP0549167A2 (en) 1993-06-30 application
EP0549167A3 (en) 1993-08-25 application
US5206871A (en) 1993-04-27 grant
CA2083122C (en) 1997-05-13 grant
KR0147857B1 (en) 1998-11-02 grant
JPH05251819A (en) 1993-09-28 application
EP0549167B1 (en) 1996-04-03 grant

Similar Documents

Publication Publication Date Title
US5426657A (en) Article comprising a focusing semiconductor laser
US5500524A (en) Diode laser co-linear light beam generator
US5993898A (en) Fabrication method and structure for multilayer optical anti-reflection coating, and optical component and optical system using multilayer optical anti-reflection coating
US6115401A (en) External cavity semiconductor laser with monolithic prism assembly
US5260957A (en) Quantum dot Laser
US5719989A (en) Multilayer thin film bandpass filter
US20060081858A1 (en) Light emitting device with omnidirectional reflectors
US6301274B1 (en) Tunable external cavity laser
US20040105644A1 (en) Optically coupling into highly uniform waveguides
US5524012A (en) Tunable, multiple frequency laser diode
US5684817A (en) Semiconductor laser having a structure of photonic bandgap material
US20040246583A1 (en) Retro-reflecting device in particular for tunable lasers
US6606199B2 (en) Graded thickness optical element and method of manufacture therefor
US6953702B2 (en) Fixed wavelength vertical cavity optical devices and method of manufacture therefor
US4995050A (en) Diode laser with external lens cavity
US4975922A (en) Multi-layered dielectric film
US5786937A (en) Thin-film color-selective beam splitter and method of fabricating the same
US6162495A (en) Protective overcoat for replicated diffraction gratings
US6310729B1 (en) Dichroic mirror
US4765715A (en) Beam splitter having a partial semitransparent layer assigned to a plurality of outgoing light beams
US5257140A (en) Mirror for infrared and visible wavelength radiation
US4846541A (en) Interference film filter and an optical waveguide and a method for producing the same
EP0372438A2 (en) UV and plasma stable high-reflectance multilayer dielectric mirror
US4465337A (en) Reduced reflectivity member and ion implantation method of fabrication
US6381059B1 (en) Optical shutter

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed