CA1096496A - Charge coupled devices - Google Patents
Charge coupled devicesInfo
- Publication number
- CA1096496A CA1096496A CA266,509A CA266509A CA1096496A CA 1096496 A CA1096496 A CA 1096496A CA 266509 A CA266509 A CA 266509A CA 1096496 A CA1096496 A CA 1096496A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- deep level
- impurity concentration
- charge
- coupled device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims abstract description 83
- 230000005855 radiation Effects 0.000 claims abstract description 45
- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- 239000002800 charge carrier Substances 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 229910052738 indium Inorganic materials 0.000 claims abstract description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 8
- 230000005284 excitation Effects 0.000 claims abstract description 7
- 230000035945 sensitivity Effects 0.000 claims description 10
- 230000007547 defect Effects 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 3
- 229910052716 thallium Inorganic materials 0.000 claims description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 230000005670 electromagnetic radiation Effects 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 238000003384 imaging method Methods 0.000 abstract description 15
- 238000012546 transfer Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 133
- 150000002500 ions Chemical class 0.000 description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 239000000758 substrate Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 239000000370 acceptor Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 241000370685 Arge Species 0.000 description 2
- 235000018734 Sambucus australis Nutrition 0.000 description 2
- 244000180577 Sambucus australis Species 0.000 description 2
- 241000193803 Therea Species 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000003331 infrared imaging Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- PLFFHJWXOGYWPR-HEDMGYOXSA-N (4r)-4-[(3r,3as,5ar,5br,7as,11as,11br,13ar,13bs)-5a,5b,8,8,11a,13b-hexamethyl-1,2,3,3a,4,5,6,7,7a,9,10,11,11b,12,13,13a-hexadecahydrocyclopenta[a]chrysen-3-yl]pentan-1-ol Chemical compound C([C@]1(C)[C@H]2CC[C@H]34)CCC(C)(C)[C@@H]1CC[C@@]2(C)[C@]4(C)CC[C@@H]1[C@]3(C)CC[C@@H]1[C@@H](CCCO)C PLFFHJWXOGYWPR-HEDMGYOXSA-N 0.000 description 1
- YQNRVGJCPCNMKT-LFVJCYFKSA-N 2-[(e)-[[2-(4-benzylpiperazin-1-ium-1-yl)acetyl]hydrazinylidene]methyl]-6-prop-2-enylphenolate Chemical compound [O-]C1=C(CC=C)C=CC=C1\C=N\NC(=O)C[NH+]1CCN(CC=2C=CC=CC=2)CC1 YQNRVGJCPCNMKT-LFVJCYFKSA-N 0.000 description 1
- ODPOAESBSUKMHD-UHFFFAOYSA-L 6,7-dihydrodipyrido[1,2-b:1',2'-e]pyrazine-5,8-diium;dibromide Chemical compound [Br-].[Br-].C1=CC=[N+]2CC[N+]3=CC=CC=C3C2=C1 ODPOAESBSUKMHD-UHFFFAOYSA-L 0.000 description 1
- 101150052147 ALLC gene Proteins 0.000 description 1
- 101100379067 Caenorhabditis elegans anc-1 gene Proteins 0.000 description 1
- 241000905957 Channa melasoma Species 0.000 description 1
- 241000518994 Conta Species 0.000 description 1
- 239000005630 Diquat Substances 0.000 description 1
- 241001663154 Electron Species 0.000 description 1
- 101150087426 Gnal gene Proteins 0.000 description 1
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 1
- 101000993982 Nicotiana tabacum Proteinase inhibitor I-B Proteins 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 101150010139 inip gene Proteins 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- KRTSDMXIXPKRQR-AATRIKPKSA-N monocrotophos Chemical compound CNC(=O)\C=C(/C)OP(=O)(OC)OC KRTSDMXIXPKRQR-AATRIKPKSA-N 0.000 description 1
- 101150006006 nudF gene Proteins 0.000 description 1
- 101150077839 pac1 gene Proteins 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
- 230000003334 potential effect Effects 0.000 description 1
- 230000006335 response to radiation Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
- H01L29/7685—Three-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB49089/75 | 1975-11-28 | ||
| GB49089/75A GB1564107A (en) | 1976-11-05 | 1976-11-05 | Charge coupled devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1096496A true CA1096496A (en) | 1981-02-24 |
Family
ID=10451102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA266,509A Expired CA1096496A (en) | 1976-11-05 | 1976-11-24 | Charge coupled devices |
Country Status (9)
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9074681B2 (en) | 2012-11-20 | 2015-07-07 | United Technologies Corporation | Hardened silver coated journal bearing surfaces and method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL176406C (nl) * | 1971-10-27 | 1985-04-01 | Philips Nv | Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag. |
| US3829885A (en) * | 1972-10-12 | 1974-08-13 | Zaidan Hojin Handotai Kenkyu | Charge coupled semiconductor memory device |
| DD114174A1 (US20020051482A1-20020502-M00012.png) * | 1973-10-03 | 1975-07-12 |
-
1976
- 1976-11-05 GB GB49089/75A patent/GB1564107A/en not_active Expired
- 1976-11-23 AU AU19911/76A patent/AU504774B2/en not_active Expired
- 1976-11-23 DE DE2653128A patent/DE2653128C2/de not_active Expired
- 1976-11-24 CA CA266,509A patent/CA1096496A/en not_active Expired
- 1976-11-24 NL NL7613062A patent/NL7613062A/ not_active Application Discontinuation
- 1976-11-25 IT IT7629784A patent/IT1064641B/it active
- 1976-11-25 SE SE7613217A patent/SE418434B/xx unknown
- 1976-11-29 JP JP14324576A patent/JPS5289490A/ja active Granted
- 1976-11-29 FR FR7635911A patent/FR2333352A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5289490A (en) | 1977-07-27 |
| SE418434B (sv) | 1981-05-25 |
| SE7613217L (sv) | 1977-05-29 |
| FR2333352A1 (fr) | 1977-06-24 |
| GB1564107A (en) | 1980-04-02 |
| DE2653128A1 (de) | 1977-06-23 |
| IT1064641B (it) | 1985-02-25 |
| NL7613062A (nl) | 1977-06-01 |
| AU1991176A (en) | 1978-06-01 |
| JPS552745B2 (US20020051482A1-20020502-M00012.png) | 1980-01-22 |
| DE2653128C2 (de) | 1987-04-16 |
| AU504774B2 (en) | 1979-10-25 |
| FR2333352B1 (US20020051482A1-20020502-M00012.png) | 1982-11-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4210922A (en) | Charge coupled imaging device having selective wavelength sensitivity | |
| CA1193765A (en) | Imaging x-ray spectrometer | |
| US20120313196A1 (en) | 3-d trench electrode detectors | |
| CA1180104A (en) | Solid state pick-up camera having a semiconductor photosensitive target | |
| US4257057A (en) | Self-multiplexed monolithic intrinsic infrared detector | |
| USRE28032E (en) | Multicolor photovoltaic device | |
| US4731640A (en) | High resistance photoconductor structure for multi-element infrared detector arrays | |
| CA1096498A (en) | Ccd radiation sensor | |
| US4131486A (en) | Back wall solar cell | |
| US3949223A (en) | Monolithic photoconductive detector array | |
| US7250971B2 (en) | Charge read-out method and solid-state imaging device capable of shortening read-out time charges stored in a plurality of light receiving units | |
| EP0075367A2 (en) | Infra-red radiation imaging devices | |
| JPS61292969A (ja) | 半導体輻射検出器セルアレイの製造方法 | |
| CA1235219A (en) | Ccd imager | |
| JPH0732263B2 (ja) | ヘテロ接合フォトダイオードアレイ | |
| CA1096496A (en) | Charge coupled devices | |
| EP0015596B1 (en) | Charge-coupled devices | |
| US4603342A (en) | Imaging array having higher sensitivity and a method of making the same | |
| CA1243103A (en) | Radiation-sensitive semiconductor device | |
| US6809350B1 (en) | Quantum well detector with layer for the storage of photo-excited electrons | |
| US4467201A (en) | Imaging devices and systems | |
| GB2134710A (en) | Image sensor device | |
| GB2104287A (en) | Data storage devices | |
| EP0132870B1 (en) | Radiation-sensitive semiconductor device | |
| US4390888A (en) | X-y Infrared CCD sensor and method for making same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |