CA1019441A - Non-volatile semiconductor storage device utilizing avalanche injection and extraction of stored information - Google Patents
Non-volatile semiconductor storage device utilizing avalanche injection and extraction of stored informationInfo
- Publication number
- CA1019441A CA1019441A CA186,057A CA186057A CA1019441A CA 1019441 A CA1019441 A CA 1019441A CA 186057 A CA186057 A CA 186057A CA 1019441 A CA1019441 A CA 1019441A
- Authority
- CA
- Canada
- Prior art keywords
- extraction
- storage device
- stored information
- semiconductor storage
- volatile semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000605 extraction Methods 0.000 title 1
- 238000002347 injection Methods 0.000 title 1
- 239000007924 injection Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US31942572A | 1972-12-29 | 1972-12-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1019441A true CA1019441A (en) | 1977-10-18 |
Family
ID=23242185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA186,057A Expired CA1019441A (en) | 1972-12-29 | 1973-11-16 | Non-volatile semiconductor storage device utilizing avalanche injection and extraction of stored information |
Country Status (7)
Country | Link |
---|---|
US (1) | US3797000A (ru) |
JP (1) | JPS525234B2 (ru) |
CA (1) | CA1019441A (ru) |
DE (1) | DE2356275C2 (ru) |
FR (1) | FR2212647B1 (ru) |
GB (1) | GB1445450A (ru) |
IT (1) | IT1001098B (ru) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4004159A (en) * | 1973-05-18 | 1977-01-18 | Sanyo Electric Co., Ltd. | Electrically reprogrammable nonvolatile floating gate semi-conductor memory device and method of operation |
US4123771A (en) * | 1973-09-21 | 1978-10-31 | Tokyo Shibaura Electric Co., Ltd. | Nonvolatile semiconductor memory |
US3838405A (en) * | 1973-10-03 | 1974-09-24 | Ibm | Non-volatile diode cross point memory array |
DE2505824C3 (de) * | 1975-02-12 | 1982-04-15 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
DE2643987C2 (de) * | 1974-09-20 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
DE2445137C3 (de) * | 1974-09-20 | 1981-02-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix |
DE2643932C2 (de) * | 1974-09-20 | 1984-02-16 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
DE2812049C2 (de) * | 1974-09-20 | 1982-05-27 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
DE2513207C2 (de) * | 1974-09-20 | 1982-07-01 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
DE2505816C3 (de) * | 1974-09-20 | 1982-04-22 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix |
DE2638730C2 (de) * | 1974-09-20 | 1982-10-28 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET, Verfahren zum Entladen des Speichergate des n-Kanal-Speicher-FET und Verwendung des n-Kanal-Speicher-FET |
DE2525062C2 (de) | 1975-06-05 | 1983-02-17 | Siemens AG, 1000 Berlin und 8000 München | Matrixanordnung aus n-Kanal-Speicher-FET |
DE2560220C2 (de) * | 1975-03-25 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
FR2307357A1 (fr) * | 1975-04-11 | 1976-11-05 | Thomson Csf | Structure monolithique de stockage de charges electriques, procede de mise en charge de cette structure et composants electroniques d'application |
US4115914A (en) * | 1976-03-26 | 1978-09-26 | Hughes Aircraft Company | Electrically erasable non-volatile semiconductor memory |
US4127900A (en) * | 1976-10-29 | 1978-11-28 | Massachusetts Institute Of Technology | Reading capacitor memories with a variable voltage ramp |
US4161039A (en) * | 1976-12-15 | 1979-07-10 | Siemens Aktiengesellschaft | N-Channel storage FET |
US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
US4145702A (en) * | 1977-07-05 | 1979-03-20 | Burroughs Corporation | Electrically programmable read-only-memory device |
US4250206A (en) * | 1978-12-11 | 1981-02-10 | Texas Instruments Incorporated | Method of making non-volatile semiconductor memory elements |
US5106772A (en) * | 1990-01-09 | 1992-04-21 | Intel Corporation | Method for improving the electrical erase characteristics of floating gate memory cells by immediately depositing a protective polysilicon layer following growth of the tunnel or gate oxide |
JP3878681B2 (ja) | 1995-06-15 | 2007-02-07 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3500142A (en) * | 1967-06-05 | 1970-03-10 | Bell Telephone Labor Inc | Field effect semiconductor apparatus with memory involving entrapment of charge carriers |
DE2201028C3 (de) * | 1971-01-15 | 1981-07-09 | Intel Corp., Mountain View, Calif. | Verfahren zum Betrieb eines Feldeffekttransistors und Feldeffekttransistor zur Ausübung dieses Verfahrens |
-
1972
- 1972-12-29 US US00319425A patent/US3797000A/en not_active Expired - Lifetime
-
1973
- 1973-11-10 DE DE2356275A patent/DE2356275C2/de not_active Expired
- 1973-11-15 JP JP12782573A patent/JPS525234B2/ja not_active Expired
- 1973-11-16 CA CA186,057A patent/CA1019441A/en not_active Expired
- 1973-11-20 FR FR7342443A patent/FR2212647B1/fr not_active Expired
- 1973-11-28 IT IT41017/73A patent/IT1001098B/it active
- 1973-11-29 GB GB5536073A patent/GB1445450A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS4998974A (ru) | 1974-09-19 |
FR2212647B1 (ru) | 1977-09-30 |
DE2356275A1 (de) | 1974-07-04 |
IT1001098B (it) | 1976-04-20 |
JPS525234B2 (ru) | 1977-02-10 |
GB1445450A (en) | 1976-08-11 |
DE2356275C2 (de) | 1984-10-04 |
FR2212647A1 (ru) | 1974-07-26 |
US3797000A (en) | 1974-03-12 |
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