BR7908298A - Sistema de armazenagem - Google Patents
Sistema de armazenagemInfo
- Publication number
- BR7908298A BR7908298A BR7908298A BR7908298A BR7908298A BR 7908298 A BR7908298 A BR 7908298A BR 7908298 A BR7908298 A BR 7908298A BR 7908298 A BR7908298 A BR 7908298A BR 7908298 A BR7908298 A BR 7908298A
- Authority
- BR
- Brazil
- Prior art keywords
- storage system
- storage
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/974,409 US4230954A (en) | 1978-12-29 | 1978-12-29 | Permanent or semipermanent charge transfer storage systems |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR7908298A true BR7908298A (pt) | 1980-09-16 |
Family
ID=25522006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR7908298A BR7908298A (pt) | 1978-12-29 | 1979-12-18 | Sistema de armazenagem |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4230954A (pt) |
| EP (1) | EP0013297B1 (pt) |
| JP (1) | JPS588078B2 (pt) |
| AU (1) | AU5409479A (pt) |
| BR (1) | BR7908298A (pt) |
| CA (1) | CA1130002A (pt) |
| DE (1) | DE2967685D1 (pt) |
| ES (1) | ES487354A1 (pt) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6032253Y2 (ja) * | 1980-07-28 | 1985-09-26 | 日鉄建材株式会社 | デツキプレ−ト |
| JPS5733491A (en) * | 1980-07-31 | 1982-02-23 | Nippon Telegr & Teleph Corp <Ntt> | Read-only semiconductor storage device |
| US4380803A (en) * | 1981-02-10 | 1983-04-19 | Burroughs Corporation | Read-only/read-write memory |
| US4468727A (en) * | 1981-05-14 | 1984-08-28 | Honeywell Inc. | Integrated cellular array parallel processor |
| US4459609A (en) * | 1981-09-14 | 1984-07-10 | International Business Machines Corporation | Charge-stabilized memory |
| DE68916855T2 (de) * | 1988-05-16 | 1995-01-19 | Matsushita Electronics Corp | Nichtflüchtige Halbleiterspeicheranordnung. |
| US5198996A (en) * | 1988-05-16 | 1993-03-30 | Matsushita Electronics Corporation | Semiconductor non-volatile memory device |
| JPH02266537A (ja) * | 1989-04-07 | 1990-10-31 | Mitsubishi Electric Corp | 電荷転送素子 |
| US5194751A (en) * | 1989-07-17 | 1993-03-16 | Sony Corporation | Structure of solid-state image sensing devices |
| WO2003005371A1 (en) * | 2001-07-02 | 2003-01-16 | Infineon Technologies Ag | Charge coupled eeprom device and corresponding method of operation |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3654999A (en) * | 1970-01-19 | 1972-04-11 | Int Harvester Co | Implement carrier |
| US3654499A (en) * | 1970-06-24 | 1972-04-04 | Bell Telephone Labor Inc | Charge coupled memory with storage sites |
| US3819959A (en) * | 1970-12-04 | 1974-06-25 | Ibm | Two phase charge-coupled semiconductor device |
| US4014036A (en) * | 1971-07-06 | 1977-03-22 | Ibm Corporation | Single-electrode charge-coupled random access memory cell |
| US3911464A (en) * | 1973-05-29 | 1975-10-07 | Ibm | Nonvolatile semiconductor memory |
| US3903543A (en) * | 1974-01-16 | 1975-09-02 | Bell Telephone Labor Inc | Charge transfer device decoder and compander |
| US4072977A (en) * | 1974-08-13 | 1978-02-07 | Texas Instruments Incorporated | Read only memory utilizing charge coupled device structures |
| US4021789A (en) * | 1975-09-29 | 1977-05-03 | International Business Machines Corporation | Self-aligned integrated circuits |
| US4060738A (en) * | 1976-03-03 | 1977-11-29 | Texas Instruments Incorporated | Charge coupled device random access memory |
| US4080590A (en) * | 1976-03-31 | 1978-03-21 | International Business Machines Corporation | Capacitor storage memory |
| US4040017A (en) * | 1976-03-31 | 1977-08-02 | International Business Machines Corporation | Injected charge capacitor memory |
| US4040016A (en) * | 1976-03-31 | 1977-08-02 | International Business Machines Corporation | Twin nodes capacitance memory |
| JPS5849035B2 (ja) * | 1976-08-16 | 1983-11-01 | 株式会社東芝 | 電荷転送素子 |
| US4040077A (en) * | 1976-08-18 | 1977-08-02 | Honeywell Information Systems, Inc. | Time-independent ccd charge amplifier |
| GB2009500A (en) * | 1977-10-06 | 1979-06-13 | Gen Electric Co Ltd | Charge coupled device |
-
1978
- 1978-12-29 US US05/974,409 patent/US4230954A/en not_active Expired - Lifetime
-
1979
- 1979-10-12 EP EP79103927A patent/EP0013297B1/en not_active Expired
- 1979-10-12 DE DE7979103927T patent/DE2967685D1/de not_active Expired
- 1979-10-15 CA CA337,647A patent/CA1130002A/en not_active Expired
- 1979-11-02 JP JP54141412A patent/JPS588078B2/ja not_active Expired
- 1979-12-18 BR BR7908298A patent/BR7908298A/pt unknown
- 1979-12-20 AU AU54094/79A patent/AU5409479A/en not_active Abandoned
- 1979-12-28 ES ES487354A patent/ES487354A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS588078B2 (ja) | 1983-02-14 |
| ES487354A1 (es) | 1980-08-01 |
| CA1130002A (en) | 1982-08-17 |
| DE2967685D1 (en) | 1989-04-20 |
| EP0013297B1 (en) | 1989-03-15 |
| AU5409479A (en) | 1980-07-03 |
| US4230954A (en) | 1980-10-28 |
| JPS5593593A (en) | 1980-07-16 |
| EP0013297A1 (en) | 1980-07-23 |
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