BE791077A - Element transducteur photoelectrique - Google Patents

Element transducteur photoelectrique

Info

Publication number
BE791077A
BE791077A BE791077DA BE791077A BE 791077 A BE791077 A BE 791077A BE 791077D A BE791077D A BE 791077DA BE 791077 A BE791077 A BE 791077A
Authority
BE
Belgium
Prior art keywords
transducer element
photoelectric transducer
photoelectric
transducer
Prior art date
Application number
Other languages
English (en)
French (fr)
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Priority claimed from JP46089622A external-priority patent/JPS5037513B2/ja
Priority claimed from JP47003265A external-priority patent/JPS5120242B2/ja
Priority claimed from JP47096428A external-priority patent/JPS524404B2/ja
Publication of BE791077A publication Critical patent/BE791077A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
BE791077D 1971-11-09 Element transducteur photoelectrique BE791077A (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP46089622A JPS5037513B2 (enrdf_load_stackoverflow) 1971-11-09 1971-11-09
JP47003265A JPS5120242B2 (enrdf_load_stackoverflow) 1971-12-29 1971-12-29
JP47096428A JPS524404B2 (enrdf_load_stackoverflow) 1972-09-25 1972-09-25

Publications (1)

Publication Number Publication Date
BE791077A true BE791077A (fr) 1973-03-01

Family

ID=27275729

Family Applications (1)

Application Number Title Priority Date Filing Date
BE791077D BE791077A (fr) 1971-11-09 Element transducteur photoelectrique

Country Status (9)

Country Link
US (1) US3858074A (enrdf_load_stackoverflow)
AU (1) AU444944B2 (enrdf_load_stackoverflow)
BE (1) BE791077A (enrdf_load_stackoverflow)
CA (1) CA976265A (enrdf_load_stackoverflow)
DE (1) DE2254605C3 (enrdf_load_stackoverflow)
FR (1) FR2159364B1 (enrdf_load_stackoverflow)
GB (1) GB1393914A (enrdf_load_stackoverflow)
IT (1) IT984638B (enrdf_load_stackoverflow)
NL (1) NL159237B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2415466A1 (de) * 1973-03-30 1974-11-07 Matsushita Electric Ind Co Ltd Photokathode

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3985918A (en) * 1972-10-12 1976-10-12 Matsushita Electric Industrial Co., Ltd. Method for manufacturing a target for an image pickup tube
DE2436990A1 (de) * 1974-08-01 1976-02-12 Bosch Gmbh Robert Fotoleitertarget fuer fernsehaufnahmeroehren mit sperrenden kontakten
US4589192A (en) * 1984-11-02 1986-05-20 The United States Of America As Represented By The Secretary Of The Army Hybrid epitaxial growth process

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE620887A (enrdf_load_stackoverflow) * 1959-06-18
US3287611A (en) * 1961-08-17 1966-11-22 Gen Motors Corp Controlled conducting region geometry in semiconductor devices
US3268764A (en) * 1963-01-09 1966-08-23 Westinghouse Electric Corp Radiation sensitive device
US3405298A (en) * 1965-03-04 1968-10-08 Rca Corp Photoconductive device having a target including a selenium blocking layer
US3346755A (en) * 1966-03-31 1967-10-10 Rca Corp Dark current reduction in photoconductive target by barrier junction between opposite conductivity type materials
US3571646A (en) * 1967-07-17 1971-03-23 Tokyo Shibaura Electric Co Photoconductive target with n-type layer of cadmium selenide including cadmium chloride and cuprous chloride
JPS5027326B1 (enrdf_load_stackoverflow) * 1970-04-22 1975-09-06

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2415466A1 (de) * 1973-03-30 1974-11-07 Matsushita Electric Ind Co Ltd Photokathode
DE2415466C2 (de) * 1973-03-30 1983-09-08 Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka Ladungsspeicherplatte

Also Published As

Publication number Publication date
FR2159364B1 (enrdf_load_stackoverflow) 1977-07-29
GB1393914A (en) 1975-05-14
DE2254605B2 (de) 1981-06-19
AU444944B2 (en) 1974-02-07
CA976265A (en) 1975-10-14
IT984638B (it) 1974-11-20
FR2159364A1 (enrdf_load_stackoverflow) 1973-06-22
NL159237B (nl) 1979-01-15
DE2254605C3 (de) 1982-04-15
US3858074A (en) 1974-12-31
AU4859272A (en) 1974-02-07
NL7215094A (enrdf_load_stackoverflow) 1973-05-11
DE2254605A1 (de) 1973-05-24

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Legal Events

Date Code Title Description
RE20 Patent expired

Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO. LTD

Effective date: 19921108